CN102602880B - Universal self-aligned preparation method for fully limited nanowires among various materials - Google Patents
Universal self-aligned preparation method for fully limited nanowires among various materials Download PDFInfo
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- CN102602880B CN102602880B CN201210077661.5A CN201210077661A CN102602880B CN 102602880 B CN102602880 B CN 102602880B CN 201210077661 A CN201210077661 A CN 201210077661A CN 102602880 B CN102602880 B CN 102602880B
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Abstract
The invention relates to a universal self-aligned preparation method for fully limited nanowires among various materials, which comprises the steps of: growing an electric heating insulating material layer and depositing a first function material layer on a substrate; spin-coating a photoresist as a sacrificial layer and photoetching to form a strip-type photoresist mask; etching the first function material layer to the upper surface of the electric heating insulating material layer by dry method to form a strip-type structure on the first function material layer; depositing a second function material layer; spin-coating SU-8 rubber and performing electron beam lithography and preparing a strip-type adhesive tape of nanometer scale in the upper part of the strip-type photoresist mask, wherein the strip-type adhesive tape is vertical to and crosses over the strip-type photoresist mask; using the strip-type adhesive tape as the mask and etching the second function material layer to the surface of the electric heating insulating material layer by dry method; removing the photoresist mask and exposing the outside first function material layer below the second function material layer so as to form a suspended structure below the second function material layer; etching by dry method to remove the outside first function material layer below the strip-type adhesive tape; and performing ultrasound-peeling to finish preparation.
Description
Technical field
The present invention relates to micro & nano technology field, particularly the full autoregistration preparation method limiting nano wire between a kind of general multiple material.The present invention proposes a kind of adopt optical lithography to prepare micro-nano magnitude photoresist adhesive tape and the nanometer scale SU-8 adhesive tape prepared of electron beam exposure do the mask of dry etching and wet etching and photoresist and make sacrificial material layer wet etching and peel off and combine, prepare the method for the full limiting device structure of nano wire level.The SU-8 glue of the anti-etching function admirable that the method is selected can be used as the dry etching of multiple material and the mask of wet etching, has expanded the range of application of the method.This method selects photoresist to make sacrificial material layer, with enough little on the impact of functional material during acetone and other organic solvent wet etching removal sacrificial material layer, therefore, the method tool in preparation precision, preparation difficulty, preparation yields, positioning precision, compatibility etc. has an enormous advantage.
Background technology
Along with solid-state devices is towards small scale, low-dimensional future development, the relevant technology of preparing of research quantum dot/nano wire and mechanism, provide new opportunity and challenge for micro-nano electronic technology, opto-electronic information technology, bio-nanotechnology.Because the limited electronic in quantum dot/nano thread structure, photon, molecule present the very abundant new phenomenon of many physical connotation and effect, by hewing out the quantum/Nano Scale Electronics Technology of a new generation, as single-electronic transistor, resonance tunnel-through diode (RTD), solar cell, laser instrument, LED, biochemistry detection etc.Therefore, how high Line-width precision, registration, simple, the full limiting structure of preparing the quantum dot/nano wire between different materials, have for the research of the new mechanism of low dimension device, the raising of different field accuracy of detection the impetus meaning far-reaching economical and efficient.At present, the preparation method of quantum dot/nano wire mainly concentrates on Material growth and electrochemical process aspect, the positioning precision of the quantum dot/nano wire prepared due to these class methods is not high, poor reliability, preparation yields is low, the restriction of high, the portable difference of R&D costs, may cause with existing CMOS technology incompatible.In order to realize the autoregistration preparation of the economical and efficient of the full limiting structure of quantum dot/nano wire between multiple material, we propose the present invention's design.
Summary of the invention
Main purpose of the present invention is to provide the autoregistration preparation method of full restriction nano wire between a kind of general multiple material, and this preparation method's live width control accuracy is high, registration, expansibility are good, preparation is simple, reliability is high, preparation yields is high, R&D costs are low, portability good, economical and efficient.
For achieving the above object, the invention provides the autoregistration preparation method of full restriction nano wire between a kind of general multiple material, the method comprises:
Step 1: at the erosion-resisting electric insulating material layer of Grown one deck, deposit first function material layer on this electric insulating material layer;
Step 2: spin coating photoresist is as sacrifice layer in the first function material layer, photoetching, forms the photoresist mask of bar shaped;
Step 3: by photoresist mask, dry etching first function material layer, to the upper surface of electric insulating material layer, makes the first function material layer form strip structure;
Step 4: the upper surface exposed at the first function material layer of bar shaped and the exposed surface of photoresist mask arrangement and electric insulating material layer, deposit second function material layer;
Step 5: in the second function material layer, spin coating SU-8 glue electron beam exposure, on the photoresist mask arrangement top of bar shaped, prepare the bar shaped adhesive tape of nanometer scale, and this bar shaped adhesive tape is vertically and cross over bar shaped photoresist mask;
Step 6: make mask by this bar shaped adhesive tape, dry etching second function material layer is to the surface of electric insulating material layer;
Step 7: remove photoresist mask with acetone wet etching, expose the first function material layer beyond below the second function material layer, makes to form a hanging structure below the second function material layer;
Step 8: dry etching removes the first function material layer beyond below bar shaped adhesive tape;
Step 9: ultrasonic-to peel off, prepares the horizontal device structure that the first function material layer is limited in the second functional material interlayer entirely, completes preparation.
As can be seen from technique scheme, the present invention has following beneficial effect:
The autoregistration preparation method of full restriction nano wire between this general multiple material provided by the invention, adopt spin coating proceeding, thin-film technique, electron beam exposure technique, dry etch process, wet etching stripping technology, prepare the full limiting device structure of functional material nano wire.The feature of the preparation method of this device architecture is: live width control accuracy is high, registration, expansibility are good, preparation is simple, reliability is high, preparation yields is high, R&D costs are low, portability good, economical and efficient.
Accompanying drawing explanation
For further describing concrete technology contents of the present invention, be described in detail as follows below in conjunction with embodiment and accompanying drawing, wherein:
Fig. 1 is the flow chart of preparation method of the present invention;
Fig. 2-Figure 10 is the structural representation of the device of autoregistration preparation full restriction nano wire, and wherein the right side of Fig. 2-Figure 10 is the top view of left hand view.
Detailed description of the invention
Refer to shown in Fig. 1 to Figure 10, the invention provides the autoregistration preparation method of full restriction nano wire between a kind of general multiple material, the method comprises:
Step 1: grow the erosion-resisting electric insulating material layer 101 of one deck on the substrate 100, deposition of functional material layer 102 on this electric insulating material layer 101, wherein the material of substrate 100 is the backing material of the existing and later appearance such as silicon, gallium nitride, sapphire, carborundum, GaAs or glass.Described electric insulating material layer 101 passes through sputtering method, vapour deposition method, CVD method, laser-assisted deposition method, atomic layer deposition strategy, one or several preparations in thermal oxidation method or metallo-organic decomposition process, the material of described electric insulating material layer 101 is oxynitrides, nitride or oxide, or the mixture that this several compound is formed, described first function material layer 102 passes through sputtering method, CVD method, one or several preparations in laser-assisted deposition method or atomic layer deposition strategy, the material of described first function material layer 102 is phase-change materials, GaAs, gallium nitride, polysilicon or Graphene,
Step 2: spin coating photoresist is as sacrifice layer in the first function material layer 102, photoetching, forms photoresist mask 103, and the material of described photoresist mask 103 is AZ series, L300 or PMMA, it is the photoresist being easy to be dissolved in acetone organic solvent, and horizontal size is 10
-1-10
3μm;
Step 3: by photoresist mask 103, dry etching first function material layer 102, make to form strip structure in the middle of it, etching depth arrives the surface of electric insulating material layer 101;
Step 4: at the surface of strip structure and electric insulating material layer 101 expose portion, deposit second function material layer 104, described second function material layer 104 is by one or more preparations in sputtering method, evaporation, chemical vapor deposition, plasma assisted deposition method, metallo-organic decomposition process or laser-assisted deposition method;
Step 5: in the second function material layer 104, spin coating SU-8 glue, electron beam exposure, strip structure is prepared the bar shaped adhesive tape 105 of nanometer scale, this bar shaped adhesive tape 105 is vertical and cross over bar shaped photoresist mask 103, the material of described second function material layer 104 can be identical with the first function material layer 102, also can adopt tungsten, titanium nitride, nickel, aluminium, titanium, gold, silver, copper, platinum, tungsten nitride, or their combination;
Step 6: make mask by this bar shaped adhesive tape 105, the surface of dry etching second function material layer 104 to electric insulating material layer 101;
Step 7: remove photoresist mask 103 with acetone wet etching, expose the first function material layer 102 beyond below the second function material layer 104, makes to form a hanging structure below the second function material layer 104;
Step 8: dry etching removes the first function material layer 102 beyond below bar shaped adhesive tape 105;
Step 9: ultrasonic-to peel off, prepares the first function material layer 102 and is entirely limited in horizontal device structure between the second function material layer 104, complete preparation.
Above-described specific embodiment; object of the present invention, technical scheme and beneficial effect are further described; be understood that; the foregoing is only specific embodiments of the invention; the present invention can not be limited; within the spirit and principles in the present invention all, any amendment made, equivalent replacement, improvement etc., be all included within protection scope of the present invention.
Claims (9)
1. an autoregistration preparation method for full restriction nano wire between general multiple material, the method comprises:
Step 1: at the erosion-resisting electric insulating material layer of Grown one deck, deposit first function material layer on this electric insulating material layer;
Step 2: spin coating photoresist is as sacrifice layer in the first function material layer, photoetching, forms the photoresist mask of bar shaped;
Step 3: by photoresist mask, dry etching first function material layer, to the upper surface of electric insulating material layer, makes the first function material layer form strip structure;
Step 4: the upper surface exposed at the first function material layer of bar shaped and the exposed surface of photoresist mask arrangement and electric insulating material layer, deposit second function material layer;
Step 5: in the second function material layer, spin coating SU-8 glue electron beam exposure, on the photoresist mask arrangement top of bar shaped, prepare the bar shaped adhesive tape of nanometer scale, and this bar shaped adhesive tape is vertically and cross over bar shaped photoresist mask;
Step 6: make mask by this bar shaped adhesive tape, dry etching second function material layer is to the surface of electric insulating material layer;
Step 7: remove photoresist mask with acetone wet etching, expose the first function material layer beyond below the second function material layer, makes to form a hanging structure below the second function material layer;
Step 8: dry etching removes the first function material layer beyond below bar shaped adhesive tape;
Step 9: ultrasonic-to peel off, prepares the horizontal device structure that the first function material layer is limited in the second functional material interlayer entirely, completes preparation.
2. the full autoregistration preparation method limiting nano wire between general multiple material according to claim 1, wherein the material of substrate is silicon, gallium nitride, sapphire, carborundum, GaAs or glass.
3. the full autoregistration preparation method limiting nano wire between general multiple material according to claim 1, wherein electric insulating material layer is by one or several preparations in sputtering method, vapour deposition method, CVD method, laser-assisted deposition method, atomic layer deposition strategy, thermal oxidation method or metallo-organic decomposition process.
4. the full autoregistration preparation method limiting nano wire between general multiple material according to claim 3, wherein the material of electric insulating material layer is oxynitrides, nitride or oxide, or the mixture that this several compound is formed.
5. the full autoregistration preparation method limiting nano wire between general multiple material according to claim 1, wherein the first function material layer is by one or several preparations in sputtering method, CVD method, laser-assisted deposition method or atomic layer deposition strategy.
6. the full autoregistration preparation method limiting nano wire between general multiple material according to claim 5, wherein the material of the first function material layer is phase-change material, GaAs, gallium nitride, polysilicon or Graphene.
7. the full autoregistration preparation method limiting nano wire between general multiple material according to claim 1, wherein the material of photoresist mask is AZ series, L300 or PMMA, and it is the photoresist being easy to be dissolved in acetone organic solvent, and horizontal size is 10
-1-10
3μm.
8. the full autoregistration preparation method limiting nano wire between general multiple material according to claim 1, wherein the second function material layer is by one or more preparations in sputtering method, evaporation, chemical vapor deposition, plasma assisted deposition method, metallo-organic decomposition process or laser-assisted deposition method.
9. the full autoregistration preparation method limiting nano wire between general multiple material according to claim 7, wherein the material of the second function material layer is identical with the first function material layer, or adopts tungsten, titanium nitride, nickel, aluminium, titanium, gold, silver, copper, platinum tungsten nitride or their combination.
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| CN1529349A (en) * | 2003-09-26 | 2004-09-15 | 中国科学院上海微***与信息技术研究 | Method for maunufacturing nano transistor device with source-drain on autoregistered insulator |
| CN101920932A (en) * | 2009-06-10 | 2010-12-22 | 中国科学院半导体研究所 | Method for manufacturing nano-size-spacing electrode |
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| US8288233B2 (en) * | 2007-09-28 | 2012-10-16 | Intel Corporation | Method to introduce uniaxial strain in multigate nanoscale transistors by self aligned SI to SIGE conversion processes and structures formed thereby |
| WO2009131724A2 (en) * | 2008-01-24 | 2009-10-29 | Massachusetts Institute Of Technology | Insulated nanogap devices and methods of use thereof |
| US20090250731A1 (en) * | 2008-04-02 | 2009-10-08 | Tsung-Yeh Yang | Field-effect transistor structure and fabrication method thereof |
| US7977151B2 (en) * | 2009-04-21 | 2011-07-12 | Cbrite Inc. | Double self-aligned metal oxide TFT |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1529349A (en) * | 2003-09-26 | 2004-09-15 | 中国科学院上海微***与信息技术研究 | Method for maunufacturing nano transistor device with source-drain on autoregistered insulator |
| CN101920932A (en) * | 2009-06-10 | 2010-12-22 | 中国科学院半导体研究所 | Method for manufacturing nano-size-spacing electrode |
Non-Patent Citations (1)
| Title |
|---|
| A self-aligned process for phase-change material nanowire confined within metal electrode nanogap;Huili Ma et al.;《Applied Physics Letters》;20111025;第173107-1页第2栏第3段至第173107-2页第1栏第1段及图1-3 * |
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