CN102594343A - Numerically controlled oscillator with high tuning precision - Google Patents
Numerically controlled oscillator with high tuning precision Download PDFInfo
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- CN102594343A CN102594343A CN2012100516251A CN201210051625A CN102594343A CN 102594343 A CN102594343 A CN 102594343A CN 2012100516251 A CN2012100516251 A CN 2012100516251A CN 201210051625 A CN201210051625 A CN 201210051625A CN 102594343 A CN102594343 A CN 102594343A
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Abstract
The invention discloses an inductance-capacitance type numerically controlled oscillator with high tuning precision. A resonant circuit comprises an inductor L, a capacitor C, a first control unit circuit, ..., and a nth control unit circuit, wherein the first control unit circuit is controlled by a first control bit D1 and consists of P type field effect transistors PM11, PM12, PM13 and PM14, the nth control unit circuit is controlled by a nth control bit Dn and consists of P type field effect transistors PMn1, PMn2, PMn3 and PMn4, and the inductor L, the capacitor C, the first control unit circuit, ..., and the nth control unit circuit are connected in parallel to form a control unit array; a first input end of the capacitor L is connected with a first input end of the capacitor C to be taken as a first input end (1) of the resonant circuit, and a second input end of the inductor L is connected with a second input end of the capacitor C to be taken as a second input end (2) of the resonant circuit; and each control unit is formed by the reverse parallel connection of PMOS (Positive Channel Metal Oxide Semiconductor) tube pairs with different sizes, the small capacitance difference can be obtained by the size difference of the PMOS tubes, and the fine frequency tuning step can be obtained, namely, the high frequency tuning precision is realized.
Description
Technical field
The present invention relates to a kind of digital controlled oscillator, introduce novel switched PMOS capacitor cell, obtain little unit switching capacity, thereby realize that meticulous frequency tuning step-length is high frequency tuning precision.
Background technology
Digital controlled oscillator can be regarded the device of a kind of numeral to frequency inverted as; It is controlled by supplied with digital signal; Can produce the frequency oscillator signal corresponding with Input Control Word; Be one of most important module in the digital phase-locked loop, through the stable output signal of loop feedback control generation frequency plot of phase-locked loop, for electronic system provides reference clock or local oscillation signal.The frequency tuning precision of digital controlled oscillator is one of crucial index; Often determined its application scenario; Simultaneously higher frequency tuning precision also is favourable for reducing its phase noise, and the digital controlled oscillator that therefore designs high frequency tuning precision is necessary.
Digital controlled oscillator mainly comprises two types of annular digital controlled oscillator and inductance capacitance type digital controlled oscillators; The annular digital controlled oscillator is made up of the cascade of odd level rp unit; Drive current or driving load capacitance through digital control each grade can realize frequency tuning easily; Inductance capacitance type digital controlled oscillator is made up of inductance capacitance resonant tank and active circuit; Wherein resonant tank is confirmed frequency of oscillation, and the active circuit equivalence is " negative resistance ", compensates the energy loss that on resistance, produces in each cycle of oscillation.Because inductance capacitance type digital controlled oscillator has more excellent phase noise performance and low jitter characteristic, in present CMOS technology, obtained to use widely.
The structure of inductance-capacitance numerical control oscillator is more fixing, and the main distinction is the structure of numerically controlled capacitor array in the active circuit resonant network that produces " negative resistance "." negative resistance " is used for the loss in compensating inductance capacitor resonance loop, keeps vibration, because the cross-couplings pipe has good common mode inhibition effect to adopting differential configuration, is that the most frequently used " negative resistance " produces circuit at present; Consider to reduce power consumption; And raising PSRR; Complementary PMOS, NMOS cross-couplings pipe to respect to independent NMOS cross-couplings pipe to or PMOS cross-couplings pipe to having remarkable advantages, in inductance capacitance type digital controlled oscillator, obtained being widely used.The tradition that is depicted as accompanying drawing 1 adopts complementary PMOS, NMOS cross-couplings pipe to produce circuit inductance capacitor type digital controlled oscillator as " negative resistance ", is called complementary chiasma coupling inductance capacitor type digital controlled oscillator.
Switched capacitor array adopts the PMOS pipe to realize that control bit Dn level switches between power supply and ground in this digital controlled oscillator.When Dn was power level, the PMOS pipe worked in strong inversion, shows as strong inversion electric capacity; And when Dn was ground level, the PMOS pipe worked in depletion region, showed as depletion region capacitance.Therefore unit switching capacity size is the difference of strong inversion electric capacity and depletion region capacitance, is subject to the characteristic size of technology, and this capacitance is bigger usually, thereby causes the tuning precision of digital controlled oscillator limited, and promptly tuning step-length is bigger.This has limited the application of inductance capacitance type digital controlled oscillator to a certain extent.
Summary of the invention
Technical problem:Technical problem to be solved by this invention is the defective to background technology, and a kind of truly feasible raising inductance capacitance type digital controlled oscillator frequency tuning precision is provided, and promptly reduces the design and the structure of its frequency tuning step-length.
Technical scheme:For solving the problems of the technologies described above; The inductance capacitance type digital controlled oscillator of high tuning precision of the present invention comprises first n type field effect transistor, second n type field effect transistor; First p type field effect transistor, the second p type field effect transistor resonant loop; The source ground of said first n type field effect transistor, the drain electrode of first n type field effect transistor connects the drain electrode of first p type field effect transistor, and the grid of first n type field effect transistor connects second input of resonant tank; The source ground of said first n type field effect transistor, the drain electrode of second n type field effect transistor connects the drain electrode of second p type field effect transistor, and the grid of second n type field effect transistor connects the first input end of resonant tank; The source electrode of said first p type field effect transistor meets power vd D, and the drain electrode of first p type field effect transistor connects the drain electrode of first n type field effect transistor, and the grid of first p type field effect transistor connects second input of resonant tank; The source electrode of said second p type field effect transistor meets power vd D, and the drain electrode of second p type field effect transistor connects the drain electrode of second n type field effect transistor, and the grid of second p type field effect transistor connects the first input end of resonant tank;
Said resonant tank comprise the inductance L that is connected in parallel, capacitor C, first control bit D1 control first control unit circuit forming by p type field effect transistor PM11, PM12, PM13 and PM14 ..., with by the n position control unit circuit of forming by p type field effect transistor PMn1, PMn2, PMn3 and PMn4 of n control bit Dn control, composition control unit array;
Said inductance L first input end connects the first input end of capacitor C, and as the first input end (1) of resonant tank, second input of the inductance L second input termination capacitor C is as second input (2) of resonant tank;
The grid of the grid of the source electrode of the source electrode of said p type field effect transistor PM11, drain electrode and substrate, p type field effect transistor PM12, drain electrode and substrate, p type field effect transistor PM13, p type field effect transistor PM14 is all received together, holds as the first control bit D1; The source electrode of the grid of p type field effect transistor PM11, p type field effect transistor PM13, drain electrode and substrate are received the first input end of inductance L, and source electrode, drain electrode and the substrate of the grid of p type field effect transistor PM12, p type field effect transistor PM14 are received second input of inductance L;
The grid of the grid of the source electrode of the source electrode of said p type field effect transistor PMn1, drain electrode and substrate, p type field effect transistor PMn2, drain electrode and substrate, p type field effect transistor PMn3, p type field effect transistor PMn4 is all received together; Hold as n control bit Dn; The source electrode of the grid of p type field effect transistor PMn1, p type field effect transistor PMn3, drain electrode and substrate are received the first input end of inductance L, and source electrode, drain electrode and the substrate of the grid of p type field effect transistor PMn2, p type field effect transistor PMn4 are received second input of inductance L;
The method that connects of each control unit is all identical in the said control unit array, PMk3, PMk4 to the size of pipe greater than PMk1, PMk2 to pipe, wherein k is 1 to n.
Beneficial effect:The present invention realizes less switching capacity through improving switched capacitor array in traditional inductance capacitance type digital controlled oscillator, has obtained higher frequency tuning precision, has promptly reduced the step-length of frequency tuning effectively.The present invention has simple in structure, the characteristics that are easy to realize.
Description of drawings
Fig. 1 is traditional inductance capacitance type digital controlled oscillator circuit diagram;
Fig. 2 is an inductance capacitance type digital controlled oscillator circuit diagram of the present invention;
Fig. 3 is the operating state curve of digital controlled oscillator work time unit switching capacity.
Embodiment
Below in conjunction with accompanying drawing and specific embodiment; Further illustrate the present invention; Should understand these embodiment only be used to the present invention is described and be not used in the restriction scope of the present invention; After having read the present invention, those skilled in the art all fall within the application's accompanying claims institute restricted portion to the modification of the various equivalent form of values of the present invention.
As shown in Figure 2; The inductance capacitance type digital controlled oscillator of high tuning precision; Comprise the first n type field effect transistor NM1, the second n type field effect transistor NM2; The first p type field effect transistor PM1, the second p type field effect transistor PM2 resonant loop; Said resonant tank comprise the inductance L that is connected in parallel, capacitor C, first control bit D1 control first control unit circuit forming by p type field effect transistor PM11, PM12, PM13 and PM14 ..., with by the n position control unit circuit of forming by p type field effect transistor PMn1, PMn2, PMn3 and PMn4 of n control bit Dn control, composition control unit array;
Said inductance L first input end connects the first input end of capacitor C, and as the first input end 1 of resonant tank, second input of the inductance L second input termination capacitor C is as second input 2 of resonant tank;
The grid of the grid of the source electrode of the source electrode of said p type field effect transistor PM11, drain electrode and substrate, p type field effect transistor PM12, drain electrode and substrate, p type field effect transistor PM13, p type field effect transistor PM14 is all received together, holds as the first control bit D1; The source electrode of the grid of p type field effect transistor PM11, p type field effect transistor PM13, drain electrode and substrate are received the first input end of inductance L, and source electrode, drain electrode and the substrate of the grid of p type field effect transistor PM12, p type field effect transistor PM14 are received second input of inductance L;
The grid of the grid of the source electrode of the source electrode of said p type field effect transistor PMn1, drain electrode and substrate, p type field effect transistor PMn2, drain electrode and substrate, p type field effect transistor PMn3, p type field effect transistor PMn4 is all received together; Hold as n control bit Dn; The source electrode of the grid of p type field effect transistor PMn1, p type field effect transistor PMn3, drain electrode and substrate are received the first input end of inductance L, and source electrode, drain electrode and the substrate of the grid of p type field effect transistor PMn2, p type field effect transistor PMn4 are received second input of inductance L;
The method that connects of each control unit is all identical in the said control unit array, PMk3, PMk4 to the size of pipe greater than PMk1, PMk2 to pipe, wherein k is 1 to n.
Be illustrated in figure 3 as the operating state of digital controlled oscillator work time unit switching capacity among Fig. 1 and Fig. 2, all the unit with control bit D1 control in scheming is the example explanation.Wherein A, B sign is zone on the chain-dotted line, and C, D, E, F sign is two zones on the solid line.When D1 was high level among Fig. 1, PM11 and PM12 all worked in the B district, and D1 is when being low level, and PM11 and PM12 all work in the A district, and therefore, the switching capacity Δ C of unit is C
B-C
AWhen D1 was high level among Fig. 2, PM11 and PM12 all worked in the F district, and PM11 and PM12 all work in the C district, and D1 is when being low level, and PM11 and PM12 all work in the E district, and PM11 and PM12 all work in the D district, so the switching capacity Δ C of unit is (C
F+ C
C)-(C
E+ C
D)=(C
F-C
E)-(C
D-C
C).When the right size difference of PMOS pipe hour, this unit switching capacity will be much littler than the unit switching capacity in the traditional structure, thereby can obtain less frequency tuning step-length, realize the high tuning precision.
Claims (2)
1. the inductance capacitance type digital controlled oscillator of a high tuning precision; Comprise first n type field effect transistor (NM1), second n type field effect transistor (NM2); First p type field effect transistor (PM1), second p type field effect transistor (PM2) resonant loop; The source ground of said first n type field effect transistor (NM1); The drain electrode of first n type field effect transistor (NM1) connects the drain electrode of first p type field effect transistor (PM1), and the grid of first n type field effect transistor (NM1) connects second input of resonant tank; The source ground of said first n type field effect transistor (NM1), the drain electrode of second n type field effect transistor (NM2) connects the drain electrode of second p type field effect transistor (PM2), and the grid of second n type field effect transistor (NM2) connects the first input end (1) of resonant tank; The source electrode of said first p type field effect transistor (PM1) meets power vd D; The drain electrode of first p type field effect transistor (PM1) connects the drain electrode of first n type field effect transistor (NM1), and the grid of first p type field effect transistor (PM1) connects second input (2) of resonant tank; The source electrode of said second p type field effect transistor (PM2) meets power vd D; The drain electrode of second p type field effect transistor (PM2) connects the drain electrode of second n type field effect transistor (NM2), and the grid of second p type field effect transistor (PM2) connects the first input end (1) of resonant tank;
It is characterized in that: said resonant tank comprise the inductance L that is connected in parallel, capacitor C, first control bit D1 control first control unit circuit forming by p type field effect transistor PM11, PM12, PM13 and PM14 ... with by the n position control unit circuit of forming by p type field effect transistor PMn1, PMn2, PMn3 and PMn4 of n control bit Dn control, composition control unit array;
Said inductance L first input end connects the first input end of capacitor C, and as the first input end (1) of resonant tank, second input of the inductance L second input termination capacitor C is as second input (2) of resonant tank;
The grid of the grid of the source electrode of the source electrode of said p type field effect transistor PM11, drain electrode and substrate, p type field effect transistor PM12, drain electrode and substrate, p type field effect transistor PM13, p type field effect transistor PM14 is all received together, holds as the first control bit D1; The source electrode of the grid of p type field effect transistor PM11, p type field effect transistor PM13, drain electrode and substrate are received the first input end of inductance L, and source electrode, drain electrode and the substrate of the grid of p type field effect transistor PM12, p type field effect transistor PM14 are received second input of inductance L;
The grid of the grid of the source electrode of the source electrode of said p type field effect transistor PMn1, drain electrode and substrate, p type field effect transistor PMn2, drain electrode and substrate, p type field effect transistor PMn3, p type field effect transistor PMn4 is all received together; Hold as n control bit Dn; The source electrode of the grid of p type field effect transistor PMn1, p type field effect transistor PMn3, drain electrode and substrate are received the first input end of inductance L, and source electrode, drain electrode and the substrate of the grid of p type field effect transistor PMn2, p type field effect transistor PMn4 are received second input of inductance L.
2. the inductance capacitance type digital controlled oscillator of high tuning precision according to claim 1; The method that connects that it is characterized in that each control unit in the said control unit array is all identical; PMk3, PMk4 to the size of pipe greater than PMk1, PMk2 to pipe, wherein k is 1 to n.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201210051625.1A CN102594343B (en) | 2012-03-01 | 2012-03-01 | Numerically controlled oscillator with high tuning precision |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107947756A (en) * | 2017-11-28 | 2018-04-20 | 中科亿海微电子科技（苏州）有限公司 | Difference CMOS process circuits and oscillatory system |
| CN108449075A (en) * | 2018-03-16 | 2018-08-24 | 西安电子科技大学 | CMOS phase-interpolation digital controlled oscillators |
Citations (5)
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| US6225871B1 (en) * | 2000-02-07 | 2001-05-01 | Prominenet Communications, Inc. | Voltage controlled CMOS oscillator |
| US6558748B2 (en) * | 2001-09-11 | 2003-05-06 | J. M. Huber Corporation | Method for forming edge sealant for wood |
| CN1832333A (en) * | 2006-04-14 | 2006-09-13 | 清华大学 | CMOS digital control LC oscillator on chip |
| CN1960164A (en) * | 2006-10-27 | 2007-05-09 | 清华大学 | CMOS of chip digital controlled complementary type LC oscillator in low noise |
| CN202444478U (en) * | 2012-03-01 | 2012-09-19 | 东南大学 | Numerically controlled oscillator with high tuning precision |
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2012
- 2012-03-01 CN CN201210051625.1A patent/CN102594343B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6225871B1 (en) * | 2000-02-07 | 2001-05-01 | Prominenet Communications, Inc. | Voltage controlled CMOS oscillator |
| US6558748B2 (en) * | 2001-09-11 | 2003-05-06 | J. M. Huber Corporation | Method for forming edge sealant for wood |
| CN1832333A (en) * | 2006-04-14 | 2006-09-13 | 清华大学 | CMOS digital control LC oscillator on chip |
| CN1960164A (en) * | 2006-10-27 | 2007-05-09 | 清华大学 | CMOS of chip digital controlled complementary type LC oscillator in low noise |
| CN202444478U (en) * | 2012-03-01 | 2012-09-19 | 东南大学 | Numerically controlled oscillator with high tuning precision |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107947756A (en) * | 2017-11-28 | 2018-04-20 | 中科亿海微电子科技（苏州）有限公司 | Difference CMOS process circuits and oscillatory system |
| CN108449075A (en) * | 2018-03-16 | 2018-08-24 | 西安电子科技大学 | CMOS phase-interpolation digital controlled oscillators |
| CN108449075B (en) * | 2018-03-16 | 2020-08-04 | 西安电子科技大学 | CMOS phase interpolation numerical control oscillator |
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| CN102594343B (en) | 2014-02-12 |
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Effective date of registration: 20170215 Address after: 99 No. 214135 Jiangsu province Wuxi city Wuxi District Linghu Avenue Patentee after: Southeast University Wuxi branch Address before: 214135 Jiangsu New District of Wuxi City Linghu Road No. 99 Patentee before: Southeast University |
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Granted publication date: 20140212 Termination date: 20170301 |