CN102593319A - LED packaging method - Google Patents
LED packaging method Download PDFInfo
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- CN102593319A CN102593319A CN2012100210354A CN201210021035A CN102593319A CN 102593319 A CN102593319 A CN 102593319A CN 2012100210354 A CN2012100210354 A CN 2012100210354A CN 201210021035 A CN201210021035 A CN 201210021035A CN 102593319 A CN102593319 A CN 102593319A
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- support
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- light
- encapsulation method
- led encapsulation
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Abstract
The invention provides an LED packaging method. The LED packaging method comprises the following steps: fixing a light-emitting diode chip onto a first surface of a bracket, wherein the bracket comprises the first surface and a second surface, which are opposite to each other; coating a welding material in a specific region of a substrate, and placing the second surface of the bracket, which is fixed with the light-emitting diode chip onto the welding material; pre-fixing the bracket and the substrate for preventing relative displacement in the subsequent steps; and heating for melting the welding material, and cooling to realize welding and fixing of the substrate and the bracket. According to the light-emitting diode packaging method, the light-emitting diode chip can be precisely positioned by the step of pre-fixing the bracket and the substrate.
Description
Technical field
The present invention relates to the semiconductor packages field, particularly relate to a kind of LED encapsulation method.
Background technology
Light-emitting diode (LED, light emitting diode) has obtained application more and more widely in every field, especially field of projection display at present.In projection display applications, the light that LED sends need shine on the light valve, and generates image through the modulation of light valve, passes through projection lens projects at last to screen.Therefore, the hot spot that forms of the light that sends of LED must cover the modulation areas of light valve.
Most effective situation is that the hot spot of the light that LED sends just overlaps with the modulation areas of light valve.Because the profile of LED and the profile of light valve all are rectangles, this just requires placement location and the angle of led chip when encapsulation is strict controllable.
Yet this has difficulties in real work.Patent 200920211108,201010219479,201120017678,201020584051,200810017707,201020250291 has been introduced existing several kinds of LED encapsulating structures respectively; They can simply be summarised as encapsulating structure as shown in Figure 1 100; Wherein led chip 101 is fixed on the support 102 through immobilization material 110, and the support 102 that needs then to have led chip 101 is fixed on the substrate 103 through welding material 112.Specific practice is that at the place coating welding material 112 that needs welding support 102 of substrate 103, the support 102 that will have led chip 101 then is positioned on this welding material 112, heats then welding material 112 fusings are welded.Yet, in fusion process, welding material 112 liquefies and have stronger flowability, it can flow freely in certain zone of substrate, is subjected to displacement thereby can drive support 102.Behind cooling curing, the position of support 102 and angle all can change, and this causes the positional precision of the light-emitting diode chip for backlight unit 101 on the support 102 to be difficult to guarantee.
Therefore need a kind of LED encapsulation method, can solve above-mentioned orientation problem.
Summary of the invention
The technical problem underlying that the present invention solves be the support that has a light-emitting diode chip for backlight unit with the substrate welding process in displacement problem, this causes light-emitting diode chip for backlight unit accurately to locate.
The present invention proposes a kind of LED encapsulation method, may further comprise the steps:
Light-emitting diode chip for backlight unit is fixed on first of support; This support comprises relative first and second;
Apply welding material in the specific region of substrate, second face of the support that is fixed with light-emitting diode chip for backlight unit is positioned on this welding material;
Support and substrate pre-fixed make it that relative displacement not take place in follow-up step;
Heating makes the welding material fusing, and the welding of cooling back realization substrate and support is fixed.
The present invention also proposes a kind of LED illuminating device, comprises light-emitting diode chip for backlight unit, and this light-emitting diode chip for backlight unit uses above-mentioned LED encapsulation method encapsulation.
Compared with prior art, the present invention includes following beneficial effect:
In the LED encapsulation method in the present invention, utilize the step that pre-fixes between support and the substrate, light-emitting diode chip for backlight unit can accurately be located.
Description of drawings
Fig. 1 is a kind of sketch map of existing package structure for LED;
Fig. 2 a to 2d is the sketch map of the step of LED encapsulation method of the present invention;
The sketch map of giving an example that Fig. 3 is to use anchor clamps to pre-fix;
Fig. 4 a and 4b are the sketch mapes of the support of first embodiment of the invention;
Fig. 5 a is the sketch map of the substrate of first embodiment of the invention;
Fig. 5 b is the explosive view of first embodiment of the invention;
Fig. 6 a and 6b are the sketch mapes of the support of second embodiment of the invention;
Fig. 7 is the sketch map of LED illuminating device of the present invention;
Fig. 8 a is the flow chart of LED encapsulation method of the present invention;
Fig. 8 b is the preferred flow chart of LED encapsulation method of the present invention.
Embodiment
LED encapsulation method of the present invention, the step that comprises is shown in Fig. 2 a to 2d.
Shown in the step 821 among Fig. 2 a and Fig. 8 a, at first be fixed in light-emitting diode chip for backlight unit 201 on first 202a of support 202 through immobilization material 210; This support 202 comprises relative first 202a and second 202b.Wherein, immobilization material 210 can have multiple choices, such as but not limited to being heat conduction elargol, conductive silver glue, golden tin solder or other soldering material.
Shown in the step 831 among Fig. 2 b and Fig. 8 a, apply welding material 212 in the specific region of substrate 203, second 202b of the support that is fixed with light-emitting diode chip for backlight unit 201 202 is positioned on this welding material 212.Specific region on the substrate 203 refers to the zone that is used for welding support 202 and substrate 203 here; This regional position is preassigned; It has determined the relative position relation between support 202 and the substrate 203, and then has determined the relative position relation between light-emitting diode chip for backlight unit 201 and the substrate 203.
Shown in the step 841 among Fig. 2 c and Fig. 8 a, support 202 and substrate 203 pre-fixed make it that relative displacement not take place in follow-up step.In the present embodiment, use glue 214 to be adhesively fixed between support 202 and the substrate 203.In practical operation, use the glue operation of under ultraviolet light or blue light illumination, solidifying the most convenient; Certainly this does not limit the use of other glue.
Except use glue pre-fixes support 202 and substrate 203, in other embodiments, can also use anchor clamps to pre-fix, as shown in Figure 3.Wherein, pressing plate 314 is pushed down support 302, and pressing plate 314 is connected fixing through set bolt 315 and support 302 and substrate 303 are compressed with substrate 303 simultaneously, plays the effect that pre-fixes.After encapsulation is accomplished, can take down pressing plate 314 and set bolt 315.The anchor clamps that are used to pre-fix here just for example, do not limit the use of other anchor clamps.
Shown in the step 851 among Fig. 2 d and Fig. 8 a, heating makes welding material 212 fusings, and realization substrate 203 in cooling back is fixed with the welding of support 202.
Because before the heat welded operation, support 202 has pre-fixed with substrate 203, so can't relatively move between welding process support 202 and the substrate 203, this has guaranteed the accurate location of the position of light-emitting diode chip for backlight unit.The flow chart of LED encapsulation method of the present invention is shown in Fig. 8 a.
In practical operation; Second 202b that considers at the support that will be fixed with light-emitting diode chip for backlight unit 201 202 is positioned in the step on the welding material 212; Because place the error of action, the position of light-emitting diode chip for backlight unit 201 possibly not be placed on the position location of appointment, so preferred; Shown in the step 835 among Fig. 8 b, further comprising the steps of in the light emitter diode seal method of the present invention:
Finely tune the position of the support 202 on the welding material 212 that is placed on substrate 203, make the light-emitting diode chip for backlight unit 201 that is fixed on the support 202 be in the position location.The position location refers to here needs light-emitting diode chip for backlight unit 201 residing accurate positions.The flow chart of this preferred LED encapsulation method is shown in Fig. 8 b.
Specifically, in the present embodiment, support has thermoelectric isolating construction, and promptly the circuit of two electrodes of the heat sent of light-emitting diode chip for backlight unit and light-emitting diode chip for backlight unit separates, and the structure of this support is as shown in Figs. 4a and 4b.In order to realize thermoelectric the separation, the base material of support 402 is an insulator; Consider the heat radiation of light-emitting diode chip for backlight unit simultaneously, the conductive coefficient of the base material of this support 402 is high more good more.The selection of the base material of support 402 has multiple, and such as but not limited to being ceramic material or semi-conducting material, wherein the most frequently used semi-conducting material is a silicon.
Be coated with the first metal layer on first 402a of this support 402, this first metal layer is divided into two the regional 402a1 and the 402a2 that do not have electrical connection each other, and this first metal layer is generally selected gold layer or silver layer for use.In the present embodiment, light-emitting diode chip for backlight unit 401 is a vertical stratification, and promptly its bottom surface itself is exactly an electrode, and its another electrode is the surface above that.In the present embodiment, after light-emitting diode chip for backlight unit 401 was fixed in a regional 402a1 of the first metal layer, the electrode of its bottom surface was electrically connected with regional 402a1; Through gold thread 401c another electrode of light-emitting diode chip for backlight unit 401 is electrically connected with regional 402a2 simultaneously, therefore,, just can lights light-emitting diode chip for backlight unit 401. through between regional 402a1 and 402a2, applying suitable voltage
Be coated with second metal level on second 402b of support 402; This second metal level is divided into the first thermal conductive zone 402b3 and first conduction region that does not have electrical connection; This first conduction region is divided into two regional 402b1 and 402b2, is electrically connected with regional 401a1 and 401a2 respectively.
Fig. 4 b has shown the sketch map of second 402b of this support 402, and wherein first conduction region zone 402b1 and 402b2 are used for to the light-emitting diode chip for backlight unit power supply, and the first thermal conductive zone 402b3 is used to transmit the heat that light-emitting diode chip for backlight unit 401 is sent.
In the present embodiment, substrate is a metal base printed circuit board, and its structure is shown in Fig. 5 a.Wherein light-emitting diode chip for backlight unit 501 is fixed on the support 502, and support 502 has and the thermoelectric isolating construction shown in Fig. 4 a.Substrate 503 is a metal base printed circuit board; Its structure is a known technology, and shown in Fig. 5 a, it comprises metal base 503d; Be coated with insulating coating 503a in metallic substrate surface; Depend on second conduction region 503b1 and the 503b2 at surface of insulating layer, corresponded respectively to two zones on first conduction region of support 502, be used to light-emitting diode chip for backlight unit 501 power supplies.Also comprise one second thermal conductive zone 503c on metal base 503d surface, this second thermal conductive zone 503c is corresponding with first thermal conductive zone of support 502, is used to light-emitting diode chip for backlight unit 501 heat radiations.
Be not electrically connected because first thermal conductive zone of support 502 itself does not exist with light-emitting diode chip for backlight unit 501, so can unnecessaryly insulate between the second thermal conductive zone 503c of first thermal conductive zone of support 502 and substrate.Therefore in the present embodiment, better for radiating effect, the position of the second thermal conductive zone 503c does not have insulating coating, at this moment, exists between the second thermal conductive zone 503c and the metal base 503d to be electrically connected.In practical operation, can adopt integral body to be coated with the method that insulating barrier again that the position of the second thermal conductive zone 503c is corresponding behind the insulating layer coating digs up and process.This belongs to prior art, does not give unnecessary details here.
In the present embodiment, because the position of the second thermal conductive zone 503c does not have insulating coating, so can form certain depression.First thermal conductive zone that this sunk part can be soldered material 512 fillings and then direct and support 502 welds together, and also can directly process a boss by base material 503d and fill.This is a prior art, does not give unnecessary details here.
In the present embodiment, second thermal conductive zone 503c of substrate 503 and first thermal conductive zone of support are fixing through welding material 512 welding, and two zones of first conduction region of the second conduction region 503b1 and 503b2 and support 502 are welded fixing respectively.
The explosive view of present embodiment is shown in Fig. 5 b.Can farthest conduct heat between the second thermal conductive zone 503c for first thermal conductive zone that makes support 502 and substrate 503, welding material 512 is accomplished in welding after fill full space between the two as far as possible; Otherwise the affiliation that adds of air reduces the coefficient of heat conduction between the two greatly.Consider the contraction of welding material 512 volume in the heat fused process, welding material 512 is coated in the step of substrate, and it is excessive that welding material needs.This area of the second thermal conductive zone 503c that just requires substrate 503 is greater than the face of first thermal conductive zone of support 502; Therefore shown in Fig. 5 b, the length of the second thermal conductive zone 503c is longer than the length of side of support 502, that is to say longlyer than the length of first thermal conductive zone, when applying welding material, can make soldering tin material be coated with the full second thermal conductive zone 503c; In welding process; Because the contraction of welding material; Welding material that the second thermal conductive zone two ends have more can be by the position of the welding of inspiration automatically, thereby has effectively avoided between the second thermal conductive zone 503c of first thermal conductive zone and substrate 503 of support 502 because welding material shrinks the cavity of being caused.
In the above-described embodiments, support is thermoelectric isolating construction, and in fact support can also be thermoelectric unseparated structure, shown in Fig. 6 a and 6b.Its medium-height trestle 602 comprises and interfixes but do not have first conductor 6021 and second conductor 6022 of electrical connection; First conductor 6021 links to each other with two electrodes of light-emitting diode chip for backlight unit 601 respectively with the part of second conductor 6022 on first 602a; First conductor 6021 and the part of second conductor 6022 on second 602b are fixing with the substrate welding respectively.Insulating material 6023 is used for fixing and isolates first conductor 6021 and second conductor 6022 simultaneously.In the present embodiment, first conductor 6021 and second conductor 6022 are used to light-emitting diode chip for backlight unit 601 power supply, and first conductor 6021 also is used to light-emitting diode chip for backlight unit 601 heat radiations simultaneously, thus heat conduction and conduction shared a transmission channel.In the present embodiment, being used for first conductor and second conductor is metal, such as but not limited to copper or aluminium.
In the present embodiment, identical with first embodiment is, first conductor 6021 need be fixing with second thermal conductive zone welding on the substrate as first thermal conductive zone, and second conductor 6022 need be weldingly fixed on by second conduction region on substrate as first conduction region; Different with first embodiment is that second thermal conductive zone of the substrate in the present embodiment is also participated in conduction simultaneously, is not electrically connected so this second thermal conductive zone does not exist with the metal base of substrate.
In the above-described embodiments; The structure of light-emitting diode chip for backlight unit is a vertical-type; In fact the present invention does not limit the kind of light-emitting diode chip for backlight unit, and other light emitting diode construction for example parallel construction (two electrodes that are light-emitting diode are all above that on the surface) or flip chip bonding type (two electrodes that are light-emitting diode are all on its bottom surface) can be used method for packing encapsulation of the present invention.
The present invention also proposes a kind of LED illuminating device, comprises light-emitting diode chip for backlight unit, and this light-emitting diode chip for backlight unit uses above-mentioned LED encapsulation method encapsulation.In this LED illuminating device, a plurality of light-emitting diodes can a shared substrate, and are as shown in Figure 7.Light-emitting diode chip for backlight unit of 701 expressions wherein, support of 702 expressions, the unit of a plurality of light-emitting diodes and support is being fixed on the substrate 703 of array, and 704 are illustrated in each support and substrate pre-fixes the glue that uses in the process.Through accurate location, can make the spacing of adjacent light-emitting diode chip for backlight unit in this array keep accurate consistent, and then guarantee the performance of follow-up optical system with relative position to each light-emitting diode chip for backlight unit.
The above is merely embodiments of the invention; Be not so limit claim of the present invention; Every equivalent structure or equivalent flow process conversion that utilizes specification of the present invention and accompanying drawing content to be done; Or directly or indirectly be used in other relevant technical fields, all in like manner be included in the scope of patent protection of the present invention.
Claims (15)
1. a LED encapsulation method is characterized in that, may further comprise the steps:
Light-emitting diode chip for backlight unit is fixed on first of support; This support comprises relative first and second;
Apply welding material in the specific region of substrate, second face of the support that is fixed with said light-emitting diode chip for backlight unit is positioned on this welding material;
Support and substrate pre-fixed make it that relative displacement not take place in follow-up step;
Heating makes said welding material fusing, and the welding of cooling back realization substrate and support is fixed.
2. LED encapsulation method according to claim 1 is characterized in that, and is before the step that support and substrate are pre-fixed, further comprising the steps of:
Finely tune the position of the support on the welding material that is placed on substrate, make the light-emitting diode chip for backlight unit that is fixed on this support be in the position location.
3. LED encapsulation method according to claim 1 is characterized in that, said substrate is a metal base printed circuit board.
4. LED encapsulation method according to claim 1 and 2 is characterized in that:
The material of said support is an insulator, is coated with the first metal layer on first of this support;
Be coated with second metal level on second of said support, this second metal level is divided into first thermal conductive zone and first conduction region that does not have electrical connection;
First conduction region of said second metal level is electrically connected with the first metal layer.
5. LED encapsulation method according to claim 4 is characterized in that, said insulator is ceramic material or semi-conducting material.
6. LED encapsulation method according to claim 4 is characterized in that, said substrate is a metal base printed circuit board.
7. LED encapsulation method according to claim 6; It is characterized in that; Comprise second thermal conductive zone and second conduction region that there are not electrical connection on the said metal base printed circuit board; First thermal conductive zone welding of this second thermal conductive zone and support is fixing, and first conduction region welding of second conduction region and support is fixing.
8. LED encapsulation method according to claim 7 is characterized in that, said second thermal conductive zone is electrically connected with the metal base of said metal base printed circuit board.
9. LED encapsulation method according to claim 7 is characterized in that, the area of said second thermal conductive zone is greater than the area of first thermal conductive zone of support.
10. according to described any one LED encapsulation method of claim 1 to 3, it is characterized in that:
Said support comprises and interfixes but do not have first conductor and second conductor of electrical connection; Said first conductor links to each other with two electrodes of said light-emitting diode chip for backlight unit respectively with the part of second conductor on first; Said first conductor and the part of second conductor on second are fixing with the substrate welding respectively.
11. a kind of LED encapsulation method according to claim 10 is characterized in that, said conductor is a metal.
12. according to described any one LED encapsulation method of claim 1 to 11, it is characterized in that, use glue to pre-fix between said support and the substrate.
13. LED encapsulation method according to claim 12 is characterized in that, said glue solidifies under ultraviolet light or blue light illumination.
14. according to described any one LED encapsulation method of claim 1 to 11, it is characterized in that, use anchor clamps to pre-fix between said support and the substrate.
15. a LED illuminating device is characterized in that, comprises light-emitting diode chip for backlight unit, this light-emitting diode chip for backlight unit uses like any described LED encapsulation method encapsulation of claim 1 to 14.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012100210354A CN102593319A (en) | 2011-12-20 | 2012-01-30 | LED packaging method |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201120537669.6 | 2011-12-20 | ||
| CN201120537669 | 2011-12-20 | ||
| CN2012100210354A CN102593319A (en) | 2011-12-20 | 2012-01-30 | LED packaging method |
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| CN102593319A true CN102593319A (en) | 2012-07-18 |
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| CN2012100210354A Pending CN102593319A (en) | 2011-12-20 | 2012-01-30 | LED packaging method |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040099711A1 (en) * | 2002-11-21 | 2004-05-27 | Asm Technology Singapore Pte Ltd | Clamp actuation mechanism |
| CN101447534A (en) * | 2007-11-27 | 2009-06-03 | 林志泽 | Light emitting diode and preparation method thereof |
| US20110068445A1 (en) * | 2009-09-18 | 2011-03-24 | Novatek Microelectronics Corp. | Chip package and process thereof |
| CN102034920A (en) * | 2010-10-08 | 2011-04-27 | 上海衡世光电科技有限公司 | Novel thermoelectric separation bracket for light-emitting diode (LED) surface mounted device (SMD) |
| CN102244163A (en) * | 2011-07-10 | 2011-11-16 | 张哲� | New method for encapsulating LED (light emitting diode) chip |
-
2012
- 2012-01-30 CN CN2012100210354A patent/CN102593319A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040099711A1 (en) * | 2002-11-21 | 2004-05-27 | Asm Technology Singapore Pte Ltd | Clamp actuation mechanism |
| CN101447534A (en) * | 2007-11-27 | 2009-06-03 | 林志泽 | Light emitting diode and preparation method thereof |
| US20110068445A1 (en) * | 2009-09-18 | 2011-03-24 | Novatek Microelectronics Corp. | Chip package and process thereof |
| CN102034920A (en) * | 2010-10-08 | 2011-04-27 | 上海衡世光电科技有限公司 | Novel thermoelectric separation bracket for light-emitting diode (LED) surface mounted device (SMD) |
| CN102244163A (en) * | 2011-07-10 | 2011-11-16 | 张哲� | New method for encapsulating LED (light emitting diode) chip |
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Application publication date: 20120718 |