CN102593274A - Method by adopting impulse airflow method to grow gallium phosphide (GaP) current extension layer - Google Patents
Method by adopting impulse airflow method to grow gallium phosphide (GaP) current extension layer Download PDFInfo
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- CN102593274A CN102593274A CN2011101320018A CN201110132001A CN102593274A CN 102593274 A CN102593274 A CN 102593274A CN 2011101320018 A CN2011101320018 A CN 2011101320018A CN 201110132001 A CN201110132001 A CN 201110132001A CN 102593274 A CN102593274 A CN 102593274A
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Abstract
The invention discloses a method by adopting an impulse airflow method to grow a gallium phosphide (GaP) current extension layer, which is characterized in that: a molybdenum (MO) source containing gallium atoms, phosphorane and a doping source are alternatively introduced into a reaction chamber of a metal organic chemical gas-phase precipitation system in a pulse way, or the flow-rate of the phosphorane is maintained constant, the MO source containing t he gallium atoms and the doping source are introduced in a pulse way. Due to adoption of the method, transition time of gallium atoms and phosphorus atoms on the surface of an extension layer can be increased, so that the gallium atoms and the phosphorus atoms can adequately cover the surface of the extension layer, and a GaP current extension layer with high quality can be obtained.
Description
Technical field
The present invention relates to a kind of in AlGaInP based light-emitting diode (LED) method of growing high-quality GaP current extending, through feed MO source, the phosphine (PH that contains the gallium atom to MOCVD reative cell pulsed
3) and doped source, to increase the transit time of atom, make it fully cover epi-layer surface, thereby obtain high-quality GaP current extending in epi-layer surface.
Background technology
Semiconductor light-emitting-diode (LED) is because the characteristic of its efficient, energy-conservation and environmental protection and receiving publicity more and more widely; And begin to be applied in the daily life gradually, such as the backlight of traffic lights, outdoor display screen, nightscape lighting, mobile phone and LCD TV etc.The structure of AlGaInP LED that does not have current extending is as shown in Figure 1, mainly by first electrode 1, and substrate 2, distributed Bragg reflecting layer 3, the first type epitaxial loayers 4, luminescent layer 5, the second type epitaxial loayers 6 and second electrode 7 are formed.Because the second type epitaxial loayer 6 conductivity in the horizontal direction is generally less; And the thickness of the second type epitaxial loayer 6 is thinner; Be generally less than 1 micron, thus electric current can't be on the horizontal direction of the second type epitaxial loayer 6 fully expansion, can only be from second electrode, the 7 vertical luminescent layers 5 that inject.Have only that part of effective luminous zone 8 of second electrode, 7 belows can produce light like this.Second electrode 7 generally is made up of opaque metal alloy, and the light overwhelming majority that send therefore effective luminous zone 8 is all covered by second electrode 7, has reduced the light extraction efficiency of LED.In order to make effective luminous zone 8 can fully cover whole luminescent layer 5, in AlGaInP LED, add current extending.The AlGaInP LED structure that has current extending is as shown in Figure 2.Current extending 9 can make current expansion to the zone of not covered by second electrode 7.Add after the current extending 9, whole luminescent layer can both obtain electric current injection and luminous, and promptly effectively luminous zone 8 can cover whole luminescent layer 5.And the light that send in the zone of not covered by second electrode 7 can inject in the external environment smoothly.Compare with the AlGaInP LED that does not have current extending, the AlGaInP LED that has current extending has higher efficient.Current extending also is called as Window layer sometimes.
The material that is used for current extending mainly contains GaP and AlGaAs.The band gap of GaP is 2.26 electronvolt, and, gold-tinted red, orange to all and part green light band are transparent.GaP has only very little magnetic tape trailer to absorb as a kind of binary compound, and is very transparent to the wave band that is lower than its band gap.And GaP is a kind of indirect bandgap material, and comparing with the direct band gap material has littler absorption coefficient.Than binary compound GaP, what ternary compound AlGaAs was easy to produce owing to the component of Al and Ga is inhomogeneous locality can take up volt, thereby causes bigger magnetic tape trailer to absorb.Simultaneously, the AlGaAs of high Al component is easily oxidized and influence its optics and electrology characteristic.Therefore GaP more is widely used for the current extending of AlGaInP LED than AlGaAs.
AlGaInP LED generally uses the GaAs substrate.Distributed Bragg reflecting layer 3, the first type epitaxial loayers 4, luminescent layer 5, the second type epitaxial loayers 6 all with the GaAs lattice match.Yet the lattice constant of GaP is littler by 3.6% than GaAs.So big lattice mismatch can produce highdensity dislocation (threading dislocations) or stacking fault (stacking faults) on the interface between the second type epitaxial loayer 6 and the GaP current extending 9.These dislocations and stacking fault may be when LED works be extended and and then are influenced efficient and the life-span of LED to luminescent layer.In order to obtain high efficiency, long-life LED, need to optimize growth technique to obtain high-quality GaP current extending.
Summary of the invention
The present invention is intended to propose a kind of method of air pulse method growth GaP current extending, growing high-quality GaP current extending under the lattice mismatch system.
To achieve these goals, solution of the present invention is:
A kind of method of air pulse method growth GaP current extending; Growth GaP current extending on the second type epitaxial loayer; When growth GaP current extending, in the reative cell of metal organic chemical vapor deposition system, pulsed alternately feeds MO source, phosphine and the doped source that contains the gallium atom; The flow unchanged that perhaps keeps phosphine, pulsed feeds MO source and the doped source that contains gallium.
The duration of MO source, phosphine or the doped source pulse of said feeding metal organic chemical vapor deposition system response chamber is 0.1s-10s.
The time interval between MO source, phosphine or the doped source pulse and the pulse of said feeding metal organic chemical vapor deposition system response chamber is 0.1s-10s.
The growth temperature of said GaP current extending is 500 ℃-1000 ℃.
The growth pressure of said GaP current extending is 10mbar-500mbar.
The growth thickness of said GaP current extending is 1 μ m –, 10 μ m.
Be used to the to grow MO source of containing the gallium atom of said GaP current extending is trimethyl gallium TMGa or triethyl-gallium TEGa.
The dopant material of said GaP current extending is Mg, Zn, C, Te, Si.
After adopting such scheme, the present invention is through adjustment pulse duration and interpulse period, and pulsed growth technology can provide the sufficient surface migration time for gallium atom, phosphorus atoms and foreign atom, makes it fully cover epi-layer surface.When opening, gallium atom and foreign atom fully move in epi-layer surface separately, until covering whole epi-layer surface in the MO source that contains gallium and doped source pulse.Be the pass in MO source that contains gallium and doped source pulse, and PH
3Pulse is when opening, and phosphorus atoms fully moves in epi-layer surface, and combines to form GaP with the gallium atom through chemical bond.Compare with traditional non-pulse formula growth technique; Pulsed growth technology according to the invention has higher horizontal growth speed; Help forming in the horizontal direction the complete GaP epitaxial loayer of high-quality; The dislocation in the reduction GaP epitaxial loayer and the density of stacking fault, thereby the efficient and the life-span of improving LED.
Description of drawings
Fig. 1 is the AlGaInP LED structural representation that does not have current extending;
Fig. 2 is the AlGaInP LED structural representation that has current extending;
Fig. 3 is the pulse sequence sketch map of pulsed mode 1 according to the invention;
Fig. 4 is the pulse sequence sketch map of pulsed mode 2 according to the invention.
Embodiment
As shown in Figure 2, on GaAs substrate 2, utilize MOCVD growth distribution Bragg reflecting layer 3, the first type epitaxial loayer 4, luminescent layer 5 and the second type epitaxial loayer 6 successively.Distributed Bragg reflecting layer 3 is constituted by AlAs, GaAs, AlGaAs, AlInP, GaInP, AlGaInP's.The first type epitaxial loayer 4 is made up of AlAs, GaAs, AlGaAs, AlInP, GaInP, AlGaInP, and with the first type impurity as doping.Luminescent layer 5 is made up of AlAs, GaAs, AlGaAs, AlInP, GaInP, AlGaInP.The second type epitaxial loayer 6 is made up of AlAs, GaAs, AlGaAs, AlInP, GaInP, AlGaInP, and with the second type impurity as doping.
On the second type epitaxial loayer 6, the metallo-organic compound source of containing the gallium atom (MO source), the phosphine (PH of the GaP current extending 9 that is used to grow
3) and doped source, feed the MOCVD reative cell with the mode of pulse.Utilize pulsed mode one according to the invention or pulsed mode two growth GaP current extendings 9.
Pulsed mode one; Pulsed alternately feeds MO source, phosphine and the doped source that contains the gallium atom: as shown in Figure 3; The MO source feeds in the MOCVD reative cell with identical pulse sequence with doped source simultaneously; The pulse that is MO source and doped source is opened simultaneously or is closed simultaneously, and the duration of each pulse is identical, is t
2After MO source and doped source are closed simultaneously, PH
3Pulse feeds in the MOCVD reative cell, and the pulse duration is for being t
1The pulse of MO source and doped source and PH
3The time interval between the pulse is t
3At t
3In time, MO source, doped source and PH
3Pulse all is in off status.PH
3Pulse duration t
1Length be 0.1s-10s.MO source and doped source pulse duration t
2Length be 0.1s-10s.PH
3Time interval t between pulse and MO source and the doped source pulse
3Length be 0.1s-10s.
Pulsed mode two, the flow unchanged of maintenance phosphine, pulsed feeds MO source and the doped source that contains gallium: as shown in Figure 4, PH
3The state that always keeps opening feeds in the MOCVD reative cell.The MO source feeds in the MOCVD reative cell with identical pulse sequence with doped source simultaneously, i.e. the pulse of MO source and doped source is opened simultaneously or closed simultaneously, and the duration of each pulse is identical, is t
5The time interval between pulse and the pulse is t
4Time interval t between MO source and doped source pulse and the pulse
4Length be 0.1s-10s.MO source and doped source pulse duration t
5Length be 0.1s-10s.
With trimethyl gallium (TMGa) and two luxuriant magnesium (Cp
2Mg) be example explanation pulsed mode.If adopt pulsed mode one, then TMGa and Cp
2Mg feeds in the MOCVD reative cell with identical pulse sequence simultaneously, and the duration of each pulse is identical.At TMGa and Cp
2After Mg closes simultaneously, PH
3Pulse feeds in the MOCVD reative cell.At TMGa and Cp
2The pulse of Mg and PH
3In the time interval between the pulse, TMGa and Cp
2Mg and PH
3Pulse all is in off status.If adopt pulsed mode two, then PH
3The state that always keeps opening feeds in the MOCVD reative cell.TMGa and Cp
2Mg feeds in the MOCVD reative cell with identical pulse sequence simultaneously, and the duration of each pulse is identical.The growth temperature of GaP current extending is 500 ℃-1000 ℃, and growth pressure is 10mbar-500mbar, and growth thickness is 1 μ m –, 10 μ m.In the specific implementation, the used MO source that contains gallium of growth GaP current extending can be trimethyl gallium (TMGa) or triethyl-gallium (TEGa), and dopant material can be Mg, Zn, C, Te, Si.Above embodiment only supplies to explain the present invention's usefulness, but not limitation of the present invention.
Claims (8)
1. the method for air pulse method growth GaP current extending; It is characterized in that: when growth GaP current extending; In the reative cell of metal organic chemical vapor deposition system; Pulsed feeds MO source, phosphine and the doped source that contains the gallium atom, perhaps keeps the flow unchanged of phosphine, and pulsed feeds MO source and the doped source that contains gallium.
2. the method for a kind of air pulse method growth GaP current extending as claimed in claim 1, it is characterized in that: the duration that feeds MO source, phosphine or the doped source pulse of metal organic chemical vapor deposition system response chamber is 0.1s-10s.
3. the method for a kind of air pulse method growth GaP current extending as claimed in claim 1 is characterized in that: the time interval between MO source, phosphine or the doped source pulse and the pulse of feeding metal organic chemical vapor deposition system response chamber is 0.1s-10s.
4. the method for a kind of air pulse method growth GaP current extending as claimed in claim 1, it is characterized in that: the growth temperature of said GaP current extending is 500 ℃-1000 ℃.
5. the method for a kind of air pulse method growth GaP current extending as claimed in claim 1, it is characterized in that: the growth pressure of said GaP current extending is 10mbar-500mbar.
6. the method for a kind of air pulse method growth GaP current extending as claimed in claim 1, it is characterized in that: the growth thickness of said GaP current extending is 1 μ m –, 10 μ m.
7. the method for a kind of air pulse method growth GaP current extending as claimed in claim 1 is characterized in that: the MO source of containing the gallium atom of the said GaP current extending that is used to grow is trimethyl gallium TMGa or triethyl-gallium TEGa.
8. the method for a kind of air pulse method growth GaP current extending as claimed in claim 1, it is characterized in that: the dopant material of said GaP current extending is Mg, Zn, C, Te, Si.
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| CN103500784A (en) * | 2013-09-26 | 2014-01-08 | 厦门乾照光电股份有限公司 | Epitaxial structure, growth process and chip process of near-infrared light emitting diode |
| CN105874574A (en) * | 2013-08-13 | 2016-08-17 | 国立研究开发法人科学技术振兴机构 | Tunnel field-effect transistor, method for manufacturing same, and switch element |
| CN106848025A (en) * | 2016-12-13 | 2017-06-13 | 华灿光电（浙江）有限公司 | A kind of growing method of LED epitaxial slice |
| CN111710592A (en) * | 2020-06-28 | 2020-09-25 | 中国科学院长春光学精密机械与物理研究所 | Ga2O3Film and preparation method thereof |
| CN112242463A (en) * | 2020-09-29 | 2021-01-19 | 苏州紫灿科技有限公司 | Deep ultraviolet LED with pulse doped electron blocking layer and preparation method thereof |
| CN112768570A (en) * | 2020-12-31 | 2021-05-07 | 华灿光电（浙江）有限公司 | Method for manufacturing gallium nitride-based light emitting diode epitaxial wafer |
| CN113451451A (en) * | 2020-08-20 | 2021-09-28 | 重庆康佳光电技术研究院有限公司 | LED epitaxial layer, growth method of current expansion layer of LED epitaxial layer and LED chip |
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| CN105874574A (en) * | 2013-08-13 | 2016-08-17 | 国立研究开发法人科学技术振兴机构 | Tunnel field-effect transistor, method for manufacturing same, and switch element |
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| CN111710592A (en) * | 2020-06-28 | 2020-09-25 | 中国科学院长春光学精密机械与物理研究所 | Ga2O3Film and preparation method thereof |
| CN113451451A (en) * | 2020-08-20 | 2021-09-28 | 重庆康佳光电技术研究院有限公司 | LED epitaxial layer, growth method of current expansion layer of LED epitaxial layer and LED chip |
| CN113451451B (en) * | 2020-08-20 | 2022-09-13 | 重庆康佳光电技术研究院有限公司 | LED epitaxial layer, growth method of current expansion layer of LED epitaxial layer and LED chip |
| CN112242463A (en) * | 2020-09-29 | 2021-01-19 | 苏州紫灿科技有限公司 | Deep ultraviolet LED with pulse doped electron blocking layer and preparation method thereof |
| CN112768570A (en) * | 2020-12-31 | 2021-05-07 | 华灿光电（浙江）有限公司 | Method for manufacturing gallium nitride-based light emitting diode epitaxial wafer |
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Application publication date: 20120718 Assignee: Yangzhou Ganzhao Photoelectric Co., Ltd. Assignor: Xiamen Changelight Co., Ltd. Contract record no.: 2017320000055 Denomination of invention: Method by adopting impulse airflow method to grow gallium phosphide (GaP) current extension layer Granted publication date: 20140730 License type: Exclusive License Record date: 20170310 |