CN102592963B - Automated gas pulse etching method, Apparatus and system - Google Patents
Automated gas pulse etching method, Apparatus and system Download PDFInfo
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- CN102592963B CN102592963B CN201110009273.9A CN201110009273A CN102592963B CN 102592963 B CN102592963 B CN 102592963B CN 201110009273 A CN201110009273 A CN 201110009273A CN 102592963 B CN102592963 B CN 102592963B
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Abstract
The invention discloses a kind of automated gas pulse etching method, Apparatus and system, the connection of its device is: the first steel cylinder of reacting gas and nitrogen and the second steel cylinder are housed respectively through solenoid valve, be connected to expanding chamber, the other end of expanding chamber is connected with etching chamber, etching chamber connects the oily trap of gear, the other end keeping off oily trap connects vacuum pump, and another road of the second steel cylinder is directly connected to etching chamber.Between expanding chamber and etching chamber, etching chamber and gear oil trap, all placing solenoid valve and needle-valve, leading to the size of venting and air-flow by controlling above-mentioned solenoid valve and noticeable degree.And respectively barometer is connected on expanding chamber with etching chamber, realize pulse etching by detecting air pressure and the switch controlling solenoid valve everywhere.Finally realize low cost, high-level efficiency and high-quality automated gas pulse etching.
Description
Technical field
The present invention relates to minute manufacturing technology field, in particular, relate to a kind of automated gas pulse etching method, Apparatus and system.
Background technology
Etching is the considerable step of one in semiconductor fabrication process, microelectronics IC manufacturing process and minute manufacturing technique, is a kind of technique of the graphical treatment be associated with photoetching.
Sense stricto etching refers to photoetching corrosion, first by photoetching, photoresist is carried out photolithographic exposure process, then realizes by alternate manner the part that required removing is fallen in corrosion treatment.But along with the development of minute manufacturing technique, present etching broadly refers to a kind of job operation being peeled off, removed material by solution, reactive ion or other mechanical system.
Existing dimension receive in process technology the most frequently used to lithographic method be: dry etching and wet etching.
Wet etching is a pure chemical reaction process, refer to utilize the chemical reaction between solution and pre-etachable material to remove part that not masked membrane material shelters and reach etching object, in the etching to monocrystalline silicon (Si), wet etching can reach higher speed, such as, adopt potassium hydroxide (KOH) wet method can reach the speed of 1 [mu (um/min).But brill is carved serious, poor to the controlling of figure during employing wet etching, can not be used for little characteristic dimension, and a large amount of chemical waste fluid introducing ionic soils can be produced, rinse in ion process and may destroy sample.
Dry etching comprises photoablation, gaseous corrosion, plasma etching etc.But, in the process adopting dry etching, its cost is high, and equipment is complicated, such as reactive ion beam etching (RIBE), often need high vacuum environment, system complex, only has the micro-nano technology laboratory of specialty or company just to have the ability to configure, and is difficult to use in a general case, if adopt common dry etching, its speed is slow again, if such as particle beams etching needs the etching tens um degree of depth, may need tens hours.
As from the foregoing, adopting lithographic method of the prior art, difficulty and the cost of etching can be increased when ensureing etching efficiency and quality, reduce the speed of etching; And reducing costs and difficulty, when improving etching speed, efficiency and the quality of etching can be affected again.Therefore, the problems referred to above are solved in the urgent need to a kind of new lithographic method.
Summary of the invention
In view of this, the invention provides a kind of automated gas pulse etching method, Apparatus and system, adopt different lithographic methods to overcome in prior art, interactional problem between the etching efficiency, quality and the cost that produce, speed.
For achieving the above object, the invention provides following technical scheme:
A kind of automated gas pulse etching device, comprising:
First steel cylinder of reacting gas is housed, through the expanding chamber that the first needle-valve is connected with described first steel cylinder path with the first solenoid valve;
Divide second steel cylinder that nitrogen is housed of two channel setting, one path is connected to described expanding chamber through the second needle-valve and the second solenoid valve, and another path is connected to etching chamber through the 3rd needle-valve and the 4th solenoid valve;
Be connected with the 5th solenoid valve path through the 5th needle-valve between described expanding chamber and described etching chamber;
Be arranged at the second barometer and first barometer of the access port that described expanding chamber is connected with described etching chamber respectively;
The gear oil trap that one end is connected with described etching chamber through the 4th needle-valve and the 4th solenoid valve by path, the other end is connected with vacuum pump.
Preferably, support and sample box is provided with in described etching chamber;
The described support being positioned at described etching chamber bottom divides three partial isometries from the locular wall being arranged at described etching chamber, and described sample box is supported by three parts of described support and form gap between the locular wall of described etching chamber.
Preferably, described reacting gas is xenon difluoride.
Preferably, described first barometer and the second air pressure count film rule detector, and its measurement range is 0 ~ 100 holder; Described 4th needle-valve and the 5th needle-valve are corrugated vacuum valve.
Preferably, described vacuum pump, gear oil trap, the 4th solenoid valve, the 4th needle-valve and the 5th needle-valve, and described 4th solenoid valve is thicker than the path caliber of the remainder in described device with the caliber of the path be connected between described etching chamber.
Preferably, comprising: automated gas pulse etching device according to claim 1 and computer;
The first barometer in described automated gas pulse etching device is connected with described computer by serial ports with the second barometer;
For controlling the first solenoid valve to the 5th solenoid valve in described automated gas pulse etching device, and the relay-operated controller of the open and close of described vacuum pump is connected with computer PC by serial ports.
A kind of automated gas pulse etching method, comprising:
Nitrogen is utilized to clean etching chamber;
Close the first solenoid valve, the second solenoid valve and the 3rd solenoid valve, open charging valve and evacuating valve vacuumizes expanding chamber and etching chamber.
Under vacuum conditions, reacting gas is utilized to perform pulse etching to the cycles samples be positioned in described etching chamber;
Judge whether pulse etching completes, and if so, then utilizes nitrogen to clean etching chamber, and terminate etching; If not, then continue to perform pulse etching.
Preferably, utilize nitrogen to carry out cleaning to etching chamber to be specially:
After each valve of initialization, described etching chamber is vacuumized;
Open the 3rd solenoid valve, in described etching chamber, pass into nitrogen;
Judge whether the air pressure in etching chamber arrives setting air pressure, or whether judge to pass into nitrogen overtime, if not, then return execution and pass into nitrogen in described etching chamber;
If so, then close the 3rd solenoid valve, stop passing into nitrogen in described etching chamber;
Judge whether to arrive wash number, if so, then perform and vacuumize, terminate cleaning;
If not, then return execution to vacuumize described etching chamber.
Preferably, the described reacting gas that utilizes is specially the cycles samples execution pulse etching be positioned in described etching chamber:
After each valve of initialization, described etching chamber is vacuumized;
By the air pressure in the first barometric surveying etching chamber, and judge whether the air pressure in etching chamber arrives setting air pressure, or, judge whether the inflation carried out to expanding chamber terminates, if not, then return execution and described etching chamber is vacuumized;
If so, then the reacting gas in described expanding chamber is injected described etching chamber, start to etch;
Judge whether to arrive the etching time preset, or, judge whether the inflation carried out to expanding chamber terminates, if not, then return and etch; If so, then judge whether to arrive default etching number of times;
Then return execution vacuumize when etching number of times does not reach etching number of times;
Etching is then terminated when etching number of times reaches etching number of times.
Preferably, the described inflation carried out to expanding chamber is specially:
After each valve of initialization, by the air pressure in expanding chamber described in the second barometric surveying;
Judge air pressure in described expanding chamber whether higher than the air pressure of setting, if so, then terminate to inflate to described expanding chamber;
If not, then required reacting gas and the amount of nitrogen is calculated;
Pass into the amount of required nitrogen;
Pass into the amount of required reacting gas;
Terminate to inflate to described expanding chamber.
Preferably, also comprise:
When placing sample in described etching chamber, utilizing and passing into etching chamber described in nitrogen balance and extraneous pressure reduction to described etching chamber.
Known via above-mentioned technical scheme, compared with prior art, the invention discloses a kind of automated gas pulse etching method, Apparatus and system, have the following advantages: adopt the lower structure of cost simply to arrange, do not need high vacuum condition; Carry out reactant in etching process and product is gas phase, can not form deposition at sample surfaces and pollute, environmental pollution is little, easily processes; Reaction rate is higher, can reach more than 1 micrometers per minutes; The etching of multiple silicide and metal can be realized; Can realize conputer controlled robotization etching, gas control accuracy is high.Low cost, high-level efficiency and high-quality etching can be realized eventually through automated gas pulse etching method disclosed in this invention, Apparatus and system.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, accompanying drawing in the following describes is only embodiments of the invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to the accompanying drawing provided.
The structural representation of Fig. 1 a kind of automated gas pulse etching device disclosed in the embodiment of the present invention;
The sectional view of the etching chamber C1 in Fig. 2 automated gas pulse etching device disclosed in the embodiment of the present invention;
Etching chamber C1 vertical view in Fig. 3 automated gas pulse etching device disclosed in the embodiment of the present invention;
The control realization schematic diagram of Fig. 4 a kind of automated pulse etching system disclosed in the embodiment of the present invention;
Fig. 5 is a kind of automated pulse lithographic method process flow diagram disclosed in the embodiment of the present invention;
Fig. 6 is that the embodiment of the present invention is disclosed based on the N2 cleaning process figure in Fig. 1 and Fig. 3 device;
Fig. 7 is that the embodiment of the present invention is disclosed based on the etch cycle process flow diagram in Fig. 1 and Fig. 3 device;
Fig. 8 is based on the expanding chamber inflation process flow diagram in Fig. 1 and Fig. 3 device disclosed in the embodiment of the present invention;
The process chart of Fig. 9 disclosed in the embodiment of the present invention during a kind of automated gas pulse etching sample.
Embodiment
For the purpose of quoting and know, the explanation of the technical term hereinafter used, write a Chinese character in simplified form or abridge and be summarized as follows:
XeF
2: xenon difluoride, water-soluble, in dilute acid soln, hydrolysis slowly, is hydrolyzed rapidly in alkaline solution, generates xenon trioxide and oxygen;
Si: crystalline silicon;
N
2: nitrogen;
Um/min: unit, micrometers per minutes;
Pa: pressure unit, Pascal;
PUMP: pump, refers in particular to vacuum pump in the present invention;
Pa/L/s: gas flow, Pascal often rises per second;
Torr: pressure unit, holder.
Below in conjunction with the accompanying drawing in the embodiment of the present invention, be clearly and completely described the technical scheme in the embodiment of the present invention, obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.
Because existing dimension receives dry etching in process technology and wet etching, when adopting any one method wherein to carry out etching, there is interactional problem between etching efficiency, quality and cost, speed in capital, namely can increase difficulty and the cost of etching when ensureing etching efficiency and quality, reducing the speed of etching; And reducing costs and difficulty, when improving etching speed, efficiency and the quality of etching can be affected again.Therefore, the invention discloses a kind of automated gas pulse etching method, Apparatus and system, etch under low vacuum environment by adopting the pulse lithographic method of inflation/deflation, its etching speed is made to reach several um/min, and can etch some silicides and metal, realize low cost, high-level efficiency and high-quality etching.Concrete structure and implementation are described in detail by following examples.
Refer to accompanying drawing 1, for the structural representation of a kind of automated gas pulse etching device disclosed by the invention, mainly comprise: keep off oily trap A, steel cylinder B1 (the first steel cylinder), steel cylinder B2 (the second steel cylinder), vacuum pump P, etching chamber C1, expanding chamber C2, barometer D1 (the first barometer), barometer D2 (the second barometer), needle-valve T1 ~ T5 (the first needle-valve to the second needle-valve) and solenoid valve V1 ~ V5 (the first solenoid valve is to the 5th solenoid valve), wherein, use as gas filling valve and extraction valve carrying out in the process etched V5 and V4.
As shown in Figure 1: XeF is housed
2steel cylinder B1 on a point path be connected on expanding chamber C2 through needle-valve T1 and solenoid valve V1.
N is housed
2steel cylinder B2 divide two-way, a path is also connected on expanding chamber C2 through needle-valve T2 and solenoid valve V2, and another path is connected on etching chamber C1 through needle-valve T3 and solenoid valve V4.
Also be connected with solenoid valve V5 through needle-valve T5 by a path between expanding chamber C2 and etching chamber C1, and, the port of this path connection expanding chamber C2 and etching chamber C1 is respectively arranged with barometer D2 and D1.
Etching chamber C1 is also connected by path one end with the oily trap A of gear, and on this path, arrange needle-valve T4 and solenoid valve V4, and the other end of this gear oil trap A is connected with vacuum pump P.
In device disclosed in the invention described above, be arranged at steel cylinder B1 and expanding chamber C2, steel cylinder B2 and expanding chamber C2, steel cylinder B2 and etching chamber C1, etching chamber C1 and keep off oily trap A, solenoid valve (V1, V2, V3, V4, V5) between expanding chamber C2 and etching chamber C1 and needle-valve (T1, T2, T3, T4, T5), its object is the size controlling logical venting and air-flow, makes air-flow with suitable speed into and out of cavity; Be arranged at the barometer (D2, D1) on expanding chamber C2 and etching chamber C1, its object is detect air pressure to realize pulse etching with the switch controlling solenoid valve everywhere.
It should be noted that, barometer D1 and D2 is film rule detectors, and corresponding controller output area is 0 ~ 100torr.
That fill in steel cylinder B1 disclosed in the invention described above is XeF
2, as reflection gas, adopt the pulse lithographic method of inflation/deflation under low vacuum environment, realize etching.This XeF
2for white crystal, be contained in steel cylinder B1, under room temperature (25 DEG C), saturated pressure is about 500Pa.That fill in steel cylinder B2 is N
2, for as blanket gas and carrier gas, in the process performing automated gas pulse etching, realize clean environment and the uniform object of etching.The product (or sample) of etching is needed then to be loaded in etching chamber C1.It should be noted that, in device embodiment disclosed in this invention, reacting gas is wherein not limited in XeF
2gas, also can be that other have the gas of identical chemical property, select XeF in the present invention
2gas is preference.
When utilizing that disclosed in the invention described above embodiment, device etches:
By the XeF filled in steel cylinder B1 and steel cylinder B2
2gas and N
2gas is delivered to expanding chamber C2, is detected by barometer D2, if XeF in expanding chamber C2
2dividing potential drop when being less than saturated pressure, Controlling solenoid valve V1 opens, owing to there is pressure difference, XeF
2gas can flow into expanding chamber C2 by path, namely realizes supplementing XeF to expanding chamber C2
2gas.And by XeF in expanding chamber C2
2gas and N
2gas and vapor permeation, make it play buffer action in case in etching chamber C1 rapid make-up gas, realize the etching to being placed on product (or sample) in etching chamber C2.
Carry out in the process etched above-mentioned, N
2gas is exported after being reduced pressure by steel cylinder B2, and the pressure of relative vacuum system is an atmospheric pressure (0.1MPa), and is divided into two paths to transmit, and a-road-through is toward etching chamber C1, and a-road-through is toward expanding chamber C2.
Leading to the N of expanding chamber C2
2air-flow further across the current limliting of needle-valve T2, or during the decompression of reliever, can be reduced to 50Pa/L/s, or within also air pressure can being reduced to 500Pa, make it with the XeF in suitable air pressure and expanding chamber C2 by gas
2gas and vapor permeation.
Leading to the N of expanding chamber C2
2during the current limliting of gas further across needle-valve T2, also N can be realized
2gas carries out low pressure purge (0 ~ 1KPa) to the individual channel (pipeline) in this device.
Leading to the N of etching chamber C1
2when gas and atmospheric pressure balance, control the etching chamber lid opening etching chamber C1, can N be realized
2gas carries out high-pressure wash (0 ~ 0.1MPa) to the individual channel (pipeline) in this device.
In the device disclosed in the invention described above embodiment, through keeping off before oily trap A is arranged at vacuum pump P, can realize reducing the return oil gas of oil pump, avoiding oil gas to pollute the product (or sample) in etching chamber C1.
It should be noted that, on the basis of embodiment disclosed in the invention described above, for ensureing pumping speed when whole device etches, needle-valve T4 and T5 now may be selected to be corrugated vacuum valve, and, vacuum pump P, keep off oily trap A, solenoid valve V4, corrugated vacuum valve T4 and T5, and the connection between solenoid valve V4 and etching chamber C1 adopts thicker caliber (diameter of path or pipeline), such as can adopt the KF25 corrugated tube of standard, the connection of remainder then can use thinner caliber (diameter of path or pipeline), thus, in the convenient connection of guarantee, on the basis of etching efficiency, can also reduce further utilizes device disclosed in this invention to carry out the cost etched.
On the basis of embodiment disclosed in the invention described above, the inside of the etching chamber C1 in this device is provided with support b and sample box c, its concrete structure as shown in Figures 2 and 3:
Port (the etching chamber C1 bottom) place of the access channel (pipeline) of etching chamber C1 is provided with support b, this support b is divided into three parts (b1, b2, b3) respectively on the equidistant locular wall being arranged at this etching chamber C1, sample box c is arranged on described support b, supported by b1, b2, b3 and form gap between the locular wall of etching chamber C1, and the height of this sample box c is lower than the locular wall of etching chamber C1.Utilizing this device to carry out in the process etched, for ensureing the homogeneity of etching, adopting edge injecting gas method.Namely gas is injected by the bottom of etching chamber C1, through support b (b1, b2, b3), injects from the gap between sample box c and etching chamber C1 locular wall.When passing into gas, gas expands the center to sample box c by the locular wall edge of etching chamber C1 and top, namely needs the sample place etched, etching gas can be avoided directly to blow sample, realizes the homogeneity to sample etching.
The device carrying out etching is described in detail in embodiment disclosed in the invention described above, for ensureing that device of the present invention realizes the process of low cost, two-forty and high-quality automated gas pulse etching, the invention also discloses a kind of automated gas pulse etching system, provide specific embodiment below and be described in detail.
Within the system, mainly comprise: automated gas pulse etching device disclosed in the invention described above and controller (this controller is computer), refer to accompanying drawing 4 for this system and carry out the control realization schematic diagram that etches.
Barometer D1 with D2 in automated gas pulse etching device disclosed in the invention described above embodiment is directly connected with computer PC by serial ports, and is carrying out carrying out data acquisition in the process etched; Also be connected with computer PC by serial ports with the relay-operated controller RC of vacuum pump P open and close for controlling five solenoid valves (V1, V2, V3, V4, V5) in above-mentioned disclosed automated gas pulse etching device.Carrying out in the process etched, computer PC passes through the data of barometer D1 and D2 Real-time Collection, device RC is gone to control according to the requirement carrying out etching to Control, and then realize controlling the open and close of five magnet valves (V1, V2, V3, V4, V5) and vacuum pump P, to complete the automatic cycle of gas pulses etching, and utilize N
2gas carries out the control of purge path (pipeline).
It should be noted that, barometer D1 and D2 is film rule detectors, and corresponding controller output area is 0 ~ 100torr.And, carrying out in the process etched, the effect controlling to bring for the open and close of five magnet valves (V1, V2, V3, V4, V5) and vacuum pump P in etching process can describe see the correspondence in the device embodiment disclosed in the invention described above, repeats no more herein.
By in system disclosed in the invention described above embodiment and device, utilize XeF
2the character of gas, in the vacuum environment of 1Pa to hundred Pa magnitude, by inflatable body, vacuumizes pulse etch cycle, on the basis ensureing low cost, ensures XeF in etching process
2reaction velocity and the speed of etching, meanwhile, utilize N at native system and device
2gas, as blanket gas and carrier gas, can also ensure that the clean environment in etching process is even with etching.Realize low cost, high-level efficiency and high-quality etching.
It should be noted that, on the device disclosed in the invention described above embodiment and system, adopt the lower structure of cost simply to arrange, and do not needing high vacuum condition to etch; And the reactant carried out in etching process and product are gas phase, can not form deposition at sample surfaces and pollute, environmental pollution is little, easily processes; In addition, the reaction rate carrying out etching is also higher, can reach more than 1 micrometers per minutes.
Meanwhile, utilize computer to carry out auto-control etching precision higher, the etching of multiple silicide and metal can be realized, also can realize the high etching selection ratio of silicon dioxide, photoresist, aluminium/crystalline silicon.And, owing to being isotropic to the etching of crystalline silicon, have nothing to do with crystal orientation, device disclosed in this invention and system can also be applied in the occasion of some particular/special requirement, such as prepare the micro-dish of high Q based on silica membrane, or the device of some MEMS (micro electro mechanical system).
Based on device and the system of carrying out automated gas pulse etching disclosed in the invention described above embodiment, the present invention also correspondence discloses a kind of automated gas pulse etching method, provides specific embodiment below and is described in detail.
Refer to accompanying drawing 5, a kind of process flow diagram of automated gas pulse etching method disclosed in the embodiment of the present invention, mainly comprises the following steps:
Step S101, utilizes N
2gas cleans etching chamber.
Step S102, places sample in etching chamber.
Step S103, closes the first solenoid valve, the second solenoid valve and the 3rd solenoid valve, opens charging valve and evacuating valve vacuumizes expanding chamber and etching chamber.
Step S104, under vacuum conditions, utilizes reacting gas XeF
2gas circulation performs pulse etching.
Step S105, judges whether pulse etching completes, if so, then performs step S106; If not, then execution step S104 is returned.
Step S106, utilizes N
2gas cleans etching chamber.
Step S107, the etching of complete paired samples, sample thief.
It should be noted that, in the process of above-mentioned execution, before and after placement sample and sample thief, all utilize N
2gas cleans etching chamber, and main object is: cleaning before can remove the remaining XeF of the inwall of vacuum etching chamber
2; Cleaning afterwards can remove the dust and steam introduced because opening etching chamber cap.In addition, when placing sample, utilizing and passing into N2 to etching chamber, ensure Equilibrium ablation room and extraneous pressure reduction, to open etching chamber lid, place sample, reduce outside air to the pollution of etching chamber simultaneously.
On the basis of the invention described above the disclosed embodiments, utilize N at execution step S101 and step S106
2gas refers to accompanying drawing 6 to the detailed process that etching chamber cleans, and mainly comprises the following steps:
Step S201, the state of each valve of initialization.
Step S202, vacuumizes.
The process performing this step S202 is identical with above-mentioned disclosed step S103.
Step S203, opens the 3rd solenoid valve, in etching chamber, passes into N
2gas.
Step S204, judges whether the air pressure in etching chamber arrives setting air pressure, if so, then performs step 206; If not, then execution step S203 is returned.
Step S205, judges whether time-out, if so, then performs step S206, if not, then returns and performs step S203.
Step S206, closes the 3rd solenoid valve, stops passing into N in etching chamber
2gas.
Step S207, judges whether to arrive wash number, if so, then performs step S208; If not, then execution step S202 is returned.
Step S208, performs vacuumize identical with step S202.
Step S209, terminates.
It should be noted that, passing into N
2can high-pressure wash be selected during gas, or low pressure purge.In addition, perform step S204 and step S205 time regardless of tandem.
On the basis of the invention described above the disclosed embodiments, utilize reacting gas XeF at execution step S104
2the detailed process that gas circulation performs pulse etching refers to accompanying drawing 7, mainly comprises the following steps:
Step S301, each valve state of initialization.
Step S302, vacuumizes.
The process performing this step S302 is identical with step S202 with above-mentioned disclosed step S103.
Step S303, by the air pressure in the first barometric surveying etching chamber, and judges whether the air pressure in etching chamber arrives setting air pressure, if so, then performs step 305; If not, then execution step S302 is returned.
Step S304, ventilates to expanding chamber, and judges whether expanding chamber inflates end, if so, then performs step 305; If not, then execution step S302 is returned.
Step S305, by the reacting gas XeF in expanding chamber
2in gas inject etching chamber.
Step S306, etches.
Step S307, judges whether to arrive the etching time preset, and if so, then performs step 309; If not, then execution step S306 is returned.
Step S308, ventilates to expanding chamber, and judges whether expanding chamber inflates end, if so, then performs step 309; If not, then execution step S306 is returned.
Step S309, judges whether to arrive and presets etching number of times, if so, then perform step 310; If not, then execution step S302 is returned.
It should be noted that, when performing above-mentioned steps S303 and step S304, execution step S307 and step S308 regardless of tandem.
Step S310, terminates.
In addition, refer to accompanying drawing 8, when execution is inflated in expanding chamber, mainly comprise the following steps:
Step S401, each valve state of initialization.
Step S402, by the air pressure in the second barometric surveying expanding chamber, and judges air pressure in expanding chamber whether higher than the air pressure of setting, if so, then performs step S406, if not, then perform step S403.
Step S403, the XeF needed for calculating
2gas and N
2gas.
Step S404, passes into required N
2the amount of gas.
Step S405, passes into required XeF
2the amount of gas.
Step S406, terminates.
It should be noted that, method disclosed in the invention described above realizes based on equipment and system disclosed in the invention described above, wherein, and the C1 in the etching chamber respective figure 1 in method; Expanding chamber corresponds to the C2 in accompanying drawing 1; First solenoid valve, the second solenoid valve and the 3rd solenoid valve then correspond to the V1 ~ V3 in accompanying drawing 1; Evacuating valve and charging valve correspond respectively to V4 and V5 in accompanying drawing 1.Be used for measuring the first barometer in etching chamber and expanding chamber and the second barometer in the present invention and also correspond to D1 and D2 in accompanying drawing 1.
Referring to accompanying drawing 9, is the process chart utilizing device disclosed in the invention described above to prepare sample, based on method flow disclosed in the invention described above and the label corresponding to each several part in device, simply describes this process chart.
All N is utilized before and after placement sample and sample thief
2gas cleans etching chamber C1, not only can remove the XeF2 that vacuum etching chamber C1 inwall is remaining; Also can clean to remove and cover and the dust of introducing and steam because open etching chamber C1.In addition, when placing sample, utilizing and passing into N2 to etching chamber, ensure Equilibrium ablation room and extraneous pressure reduction, to open etching chamber lid, place sample, reduce outside air to the pollution of etching chamber simultaneously.
The lithography of sample is completed in pulse etch cycle.Before etching starts, shut electromagnetic valve V1, V2, V3, open V4, V5, vacuumized by expanding chamber C2 and etching chamber C1.In the process of carrying out cycle pulse etching, first, by XeF
2gas and N
2gas mixes in expanding chamber C2 according to the ratio of setting; Then, open the charging valve V5 of etching chamber C1, be filled with reacting gas to etching chamber C1, and close charging valve V5 arrive the air pressure of setting at etching chamber C1 after.
Meanwhile, utilizing barometer D1 to continue the air pressure of detection etch room C1, when arriving certain hour or air pressure is substantially constant, XeF being described
2gas reaction is complete, then, opens the evacuating valve V4 of etching chamber C1, is vacuumized by etching chamber C1; When etching chamber C1 air pressure such as, lower than setting infrabar, 5Pa, close evacuating valve V4, enter etch cycle next time.
It should be noted that, in expanding chamber C2, gas and vapor permeation ratio is the air pressure detected by barometer D2 in expanding chamber C2, control XeF
2gas and N
2solenoid valve V1 and V2 at gas place realizes, and namely as closedown gas filling valve V5, stops, after expanding chamber C2 inflation, reading barometer D2 air pressure, according to the expanding chamber C2 air pressure of setting, calculates the XeF needing respectively to pass into
2gas and N
2the air pressure component of gas, then opens solenoid valve V1 and is filled with XeF
2gas; As arrival XeF
2after gas component air pressure, shut electromagnetic valve V1, opens solenoid valve V2 and is filled with N
2gas, arrives N
2after gas component air pressure, shut electromagnetic valve V2, completes and once circulates.
Because expanding chamber C2 gas replenishment process can carry out after closedown gas filling valve V5, therefore expanding chamber C2 gas replenishment process and etching chamber C1 etching process can be carried out simultaneously, can shorten the running time, improve the speed of etching.
In sum:
The above-mentioned the disclosed embodiments of the present invention utilize XeF
2character, carrying out in the vacuum environment of 1Pa to hundred Pa magnitude, by adopting the pulse lithographic method of inflation/deflation to etch under low vacuum environment, ensureing reaction velocity and XeF
2reaction thoroughly, and can etch some silicides and metal, realizes low cost, high-level efficiency and high-quality etching.Meanwhile, also N is utilized
2as blanket gas and carrier gas, realize ensureing clean environment and the uniform object of etching.
In this instructions, each embodiment adopts the mode of going forward one by one to describe, and what each embodiment stressed is the difference with other embodiments, between each embodiment identical similar portion mutually see.For device disclosed in embodiment, because it corresponds to the method disclosed in Example, so description is fairly simple, relevant part illustrates see method part.
The software module that the method described in conjunction with embodiment disclosed herein or the step of algorithm can directly use hardware, processor to perform, or the combination of the two is implemented.Software module can be placed in the storage medium of other form any known in random access memory (RAM), internal memory, ROM (read-only memory) (ROM), electrically programmable ROM, electrically erasable ROM, register, hard disk, moveable magnetic disc, CD-ROM or technical field.
To the above-mentioned explanation of the disclosed embodiments, professional and technical personnel in the field are realized or uses the present invention.To be apparent for those skilled in the art to the multiple amendment of these embodiments, General Principle as defined herein can without departing from the spirit or scope of the present invention, realize in other embodiments.Therefore, the present invention can not be restricted to these embodiments shown in this article, but will meet the widest scope consistent with principle disclosed herein and features of novelty.
Claims (10)
1. an automated gas pulse etching device, is characterized in that, comprising:
First steel cylinder of reacting gas is housed, through the expanding chamber that the first needle-valve is connected with described first steel cylinder path with the first solenoid valve;
Divide second steel cylinder that nitrogen is housed of two channel setting, one path is connected to described expanding chamber through the second needle-valve and the second solenoid valve, and another path is connected to etching chamber through the 3rd needle-valve and the 4th solenoid valve;
Be connected with the 5th solenoid valve path through the 5th needle-valve between described expanding chamber and described etching chamber;
Be arranged at the second barometer and first barometer of the access port that described expanding chamber is connected with described etching chamber respectively;
The gear oil trap that one end is connected with described etching chamber through the 4th needle-valve and the 4th solenoid valve by path, the other end is connected with vacuum pump.
2. device according to claim 1, is characterized in that, is provided with support and sample box in described etching chamber;
The described support being positioned at described etching chamber bottom divides three partial isometries from the locular wall being arranged at described etching chamber, and described sample box is supported by three parts of described support and form gap between the locular wall of described etching chamber.
3. device according to claim 1, is characterized in that, described reacting gas is xenon difluoride.
4. device according to claim 1, is characterized in that, described first barometer and the second air pressure count detector, and its measurement range is 0 ~ 100 holder; Described 4th needle-valve and the 5th needle-valve are corrugated vacuum valve.
5. the device according to claim 1 or 4, it is characterized in that, described vacuum pump, gear oil trap, the 4th solenoid valve, the 4th needle-valve and the 5th needle-valve, and described 4th solenoid valve is thicker than the path caliber of the remainder in described device with the caliber of the path be connected between described etching chamber.
6. an automated gas pulse etching device, is characterized in that, comprising: automated gas pulse etching device according to claim 1 and computer;
The first barometer in described automated gas pulse etching device is connected with described computer by serial ports with the second barometer;
For controlling the first solenoid valve to the 5th solenoid valve in described automated gas pulse etching device, and the relay-operated controller of the open and close of described vacuum pump is connected with computer PC by serial ports.
7. an automated gas pulse etching method, is characterized in that, comprising:
Nitrogen is utilized to clean etching chamber by conputer controlled;
Close the first solenoid valve, the second solenoid valve and the 3rd solenoid valve by computer, open charging valve and evacuating valve vacuumizes expanding chamber and etching chamber;
Under vacuum conditions, utilize reacting gas to perform pulse etching to the cycles samples be positioned in described etching chamber, be specially: after each valve of initialization, described etching chamber is vacuumized; By the air pressure in the first barometric surveying etching chamber, and judge whether the air pressure in etching chamber arrives setting air pressure, or, judge whether the inflation carried out to expanding chamber terminates, if not, then return execution and described etching chamber is vacuumized; If so, then the reacting gas in described expanding chamber is injected described etching chamber, start to etch; Judge whether to arrive the etching time preset, or, judge whether the inflation carried out to expanding chamber terminates, if not, then return and etch; If so, then judge whether to arrive default etching number of times; Then return execution vacuumize when etching number of times does not reach etching number of times; Etching is then terminated when etching number of times reaches etching number of times;
Judge whether pulse etching completes, and if so, then utilizes nitrogen to clean etching chamber, and terminate etching; If not, then continue to perform pulse etching.
8. method according to claim 7, is characterized in that, utilizes nitrogen to carry out cleaning to etching chamber and is specially:
After each valve of initialization, described etching chamber is vacuumized;
Open the 3rd solenoid valve, in described etching chamber, pass into nitrogen;
Judge whether the air pressure in etching chamber arrives setting air pressure, or whether judge to pass into nitrogen overtime, if not, then return execution and pass into nitrogen in described etching chamber;
If so, then close the 3rd solenoid valve, stop passing into nitrogen in described etching chamber;
Judge whether to arrive wash number, if so, then perform and vacuumize, terminate cleaning;
If not, then return execution to vacuumize described etching chamber.
9. method according to claim 7, is characterized in that, the described inflation carried out to expanding chamber is specially:
After each valve of initialization, by the air pressure in expanding chamber described in the second barometric surveying;
Judge air pressure in described expanding chamber whether higher than the air pressure of setting, if so, then terminate to inflate to described expanding chamber;
If not, then required reacting gas and the amount of nitrogen is calculated;
Pass into the amount of required nitrogen;
Pass into the amount of required reacting gas;
Terminate to inflate to described expanding chamber.
10. method according to claim 7, is characterized in that, also comprises:
When placing sample in described etching chamber, utilizing and passing into etching chamber described in nitrogen balance and extraneous pressure reduction to described etching chamber.
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| CN108385110B (en) * | 2018-04-04 | 2019-07-12 | 西安工业大学 | A kind of burnishing device and polishing method using in-situ sputtering coupled ion beam etching |
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