CN102592925A - Field emission element and field emission display device - Google Patents
Field emission element and field emission display device Download PDFInfo
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- CN102592925A CN102592925A CN2012100677361A CN201210067736A CN102592925A CN 102592925 A CN102592925 A CN 102592925A CN 2012100677361 A CN2012100677361 A CN 2012100677361A CN 201210067736 A CN201210067736 A CN 201210067736A CN 102592925 A CN102592925 A CN 102592925A
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- 239000000758 substrate Substances 0.000 claims abstract description 69
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims description 36
- 239000000463 material Substances 0.000 claims description 19
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- 230000000052 comparative effect Effects 0.000 description 5
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 3
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- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000002041 carbon nanotube Substances 0.000 description 2
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- 239000002131 composite material Substances 0.000 description 2
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 2
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- 239000011733 molybdenum Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
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- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
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- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
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- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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Abstract
A field emission element comprises a first substrate, a second substrate, a first electrode, a second electrode, a third electrode and a patterned dielectric layer. The first electrode is disposed on a first inner surface of the first substrate facing the second substrate. The second electrode, the third electrode and the patterned dielectric layer are arranged on a second inner surface of the second substrate, which faces the first substrate. The patterned dielectric layer is arranged between the second electrode and the third electrode and is separated from the second electrode and the third electrode. The first thickness of the patterned dielectric layer is greater than the second thickness of the second electrode, and the first thickness of the patterned dielectric layer is greater than the third thickness of the third electrode.
Description
Technical field
The invention relates to a kind of field emission component and field emission display device, refer to a kind of field emission component and field emission display device that utilizes pattern dielectric layer to reduce driving voltage especially.
Background technology
Field Emission Display is after cathode-ray tube display and LCD, the emerging new technology of the most potential next generation.With respect to existing Display Technique, Field Emission Display has that the restriction of low driving voltage, no visual angle, operating temperature range are big, high brightness, high to advantages such as color when are saturated, more and more comes into one's own in recent years.
General lateral field radiated element (lateral field mission device) is to have by cathode electrode, gate electrode and the three-stage structure that anode electrode constituted that is coated with fluorescent material.Through bestowing gate electrode one voltage, bring out electronics and break away from ejaculation from the field emission source (emitter) on the cathode electrode, the electronics under vacuum environment bombards phosphor powder through the attraction of anode electrode high pressure and forms luminous.Therefore, if gate electrode is arranged on the cathode electrode top, and the nearer voltage of then bestowing gate electrode of the distance between gate electrode and cathode electrode just can be lower.Yet the structure of grid on this (top-gate) has its technologic difficulty.Therefore, if use the structural design of coplanar cathode electrode and gate electrode, can reach the purpose of simplifying technology.But because cathode electrode and gate electrode are coplanar restriction, thus need bestow on the gate electrode than on the higher voltage of grid structure bring out electronics and launch from cathode electrode.Under the condition of fixed current; High voltage (about 400～800 volts) is not only and is meaned high power consumption, to drive IC (driver IC) the design in the pulse, rise time and fall time specification define and element material on withstand voltage degree and useful life etc. all be very big problem.
Summary of the invention
One of main purpose of the present invention is to provide a kind of field emission component and field emission display device, through between cathode electrode and gate electrode, pattern dielectric layer being set, reduces gate drive voltage.
For reaching above-mentioned purpose, the present invention provides a kind of field emission component, comprises one first substrate, one second substrate, one first electrode, one second electrode, a third electrode and a pattern dielectric layer.Second substrate is to be oppositely arranged with first substrate.First electrode is to be arranged on one first inner surface of first real estate to second substrate.Second electrode is to be arranged on one second inner surface of second real estate to first substrate.Third electrode is to be arranged on second inner surface of second substrate.Pattern dielectric layer is to be arranged on second inner surface of second substrate, and pattern dielectric layer is to be arranged between second electrode and the third electrode.Pattern dielectric layer is disconnected from each other with second electrode, and pattern dielectric layer is disconnected from each other with third electrode.One first thickness of pattern dielectric layer is one second thickness greater than second electrode substantially, and first thickness of pattern dielectric layer is one the 3rd thickness greater than third electrode substantially.
This second electrode and this third electrode are to be made up of the same material layer.
This second electrode and this third electrode have a plurality of branch electrodes respectively, and respectively this branch electrodes is setting interlaced with each other.
This pattern dielectric layer is to be parallel on the direction of this second substrate in one to be arranged between this second electrode and this third electrode.
One dielectric constant of this pattern dielectric layer is substantially between 1 to 10.
One ratio of this second thickness of this of this pattern dielectric layer first thickness and this second electrode is substantially between 1 to 100, and a ratio of the 3rd thickness of this first thickness of this pattern dielectric layer and this third electrode is substantially between 1 to 100.
This pattern dielectric layer and this second interelectrode one first distance are second distances that is equal between this pattern dielectric layer and this third electrode substantially.
This pattern dielectric layer and this second interelectrode one first distance is between 0.01 to 0.4 with a ratio of one the 3rd distance between this second electrode and this third electrode substantially, and the second distance between this pattern dielectric layer and this third electrode to follow a ratio of the 3rd distance between this second electrode and this third electrode be substantially between 0.01 to 0.4.
This first electrode is an anode electrode, and this second electrode is a cathode electrode, and this third electrode is a gate electrode.
This pattern dielectric layer and this second interelectrode one first distance are second distances that is less than or equal between this pattern dielectric layer and this third electrode substantially.
Comprise that more one first field emission source is arranged on this cathode electrode.
This first electrode is an anode electrode, and this second electrode is first the moon/gate electrode, and this third electrode is second the moon/gate electrode.
Comprise that more one first field emission source is arranged on this first the moon/gate electrode, and one second field emission source is arranged on this second the moon/gate electrode.
The type of drive of this first the moon/gate electrode and this second the moon/gate electrode comprises that one uses the type of drive of alternating voltage.
More comprise a fluorescent layer, be arranged between this first electrode and this second electrode and be arranged between this first electrode and this third electrode.
This pattern dielectric layer has a curved surfaces.
For reaching above-mentioned purpose, the present invention provides a kind of field emission display device, comprises one first substrate, one second substrate, one first electrode, a plurality of second electrode, a plurality of third electrode, a fluorescent layer and at least one pattern dielectric layer.Second substrate is to be oppositely arranged with first substrate.First electrode is to be arranged on one first inner surface of first real estate to second substrate.Second electrode is to be arranged on one second inner surface of second real estate to first substrate.Third electrode is to be arranged on second inner surface of second substrate.Each third electrode is to be arranged between adjacent two second electrodes.Fluorescent layer is to be arranged between first electrode and second electrode and to be arranged between first electrode and the third electrode.Pattern dielectric layer is to be arranged on second inner surface of second substrate, and pattern dielectric layer is to be arranged between two adjacent second electrodes and third electrode.Pattern dielectric layer is disconnected from each other with second electrode, and pattern dielectric layer is disconnected from each other with third electrode.One first thickness of pattern dielectric layer is one second thickness greater than each second electrode substantially, and first thickness of pattern dielectric layer is one the 3rd thickness greater than each third electrode substantially.
More comprise at least one supporter, be arranged between this first substrate and this second substrate, with so that keep a gap between this first substrate and this second substrate.
Description of drawings
Fig. 1 is the sketch map of the field emission component of first preferred embodiment of the present invention.
Fig. 2 A is the electric field situation sketch map of the field emission component of a comparative example of the present invention.
Fig. 2 B is the electric field situation sketch map of the field emission component of first preferred embodiment of the present invention.
Fig. 3 is that the electric field situation of the field emission component of first preferred embodiment of the present invention and comparative example compares sketch map.
Fig. 4 be first preferred embodiment of the present invention field emission component second electrode and third electrode on look sketch map.
Fig. 5 is the sketch map of the field emission component of second preferred embodiment of the present invention.
Fig. 6 is the sketch map of the field emission component of the 3rd preferred embodiment of the present invention.
Fig. 7 is the sketch map of the field emission component of the 4th preferred embodiment of the present invention.
Fig. 8 is the sketch map of the field emission display device of the 5th preferred embodiment of the present invention.
Fig. 9 is the sketch map of the field emission display device of the 6th preferred embodiment of the present invention.
Figure 10 is the sketch map of the field emission display device of the 7th preferred embodiment of the present invention.
Description of reference numerals
100 field emission components, 110 first substrates
110S first inner surface 120 second substrates
120S second inner surface 130 first electrodes
141 branch electrodes 141B, first the moon/gate electrode
151 branch electrodes 150B, second the moon/gate electrode
162 curved surfaces, 171 first field emission sources
172 second field emission sources, 180 fluorescent layers
The 180A first fluorescent layer 180B second fluorescent layer
180C the 3rd fluorescent layer 190 supporters
200 field emission components, 300 field emission components
400 field emission components, 500 field emission display devices
600 field emission display devices, 700 field emission display devices
A curve B curve
D1 first distance B 2 second distances
D3 the 3rd is apart from T1 first thickness
T2 second thickness T 3 the 3rd thickness
The X direction
Embodiment
For making those skilled in the art can further understand the present invention, the hereinafter spy enumerates preferred embodiment of the present invention, and conjunction with figs., specify constitution content of the present invention and the effect desiring to reach.
Please refer to Fig. 1.Fig. 1 is the sketch map of the field emission component of first preferred embodiment of the present invention.Explanation for ease, of the present invention each graphicly be merely signal being easier to understand the present invention, its detailed ratio can be adjusted according to the demand of design.As shown in Figure 1, present embodiment provides a field emission component 100.Field emission component 100 comprises one first substrate 110, one second substrate 120, one first electrode 130, one second electrode 140, a third electrode 150 and a pattern dielectric layer 160.Second substrate 120 is to be oppositely arranged with first substrate 130.First electrode 130 is to be arranged at first substrate 110 in the face of on the one first inner surface 110S of second substrate 120.Second electrode 140, third electrode 150 and pattern dielectric layer 160 are to be arranged at second substrate 120 in the face of on the one second inner surface 120S of first substrate 110.In other words, second electrode 140, third electrode 150 and pattern dielectric layer 160 are preferably rough copline setting.The material layer of first electrode 130 of present embodiment can comprise for example tin indium oxide (indium tin oxide of transparent conductive material; ITO), indium zinc oxide (indium zinc oxide; IZO) with aluminum zinc oxide (aluminum zinc oxide; AZO), the mixed layer and the composite bed of above-mentioned material, or other transparent conductive materials that are fit to, but not as limit.Second electrode 140 of present embodiment is preferably by the same material layer with third electrode 150 and constitutes; Above-mentioned material layer can comprise the for example for example composite bed of silver, aluminium, copper, magnesium, molybdenum, above-mentioned material or the alloy of above-mentioned material of the nontransparent electric conducting material that is fit to of tin indium oxide, indium zinc oxide and aluminum zinc oxide or other of transparent conductive material, but not as limit.Pattern dielectric layer 160 is to be arranged between second electrode 140 and the third electrode 150.Pattern dielectric layer 160 is disconnected from each other with second electrode 140, and pattern dielectric layer 160 is disconnected from each other with third electrode 150.Illustrate further, pattern dielectric layer 160 is preferably to be parallel on the direction X of second substrate 120 in one and is arranged between second electrode 140 and the third electrode 150, but not as limit.In the present embodiment, one first thickness T 1 of pattern dielectric layer 160 is one second thickness T 2 greater than second electrode 140 substantially, and first thickness T 1 of pattern dielectric layer 160 is one the 3rd thickness T 3 greater than third electrode 150 substantially.
In addition; In order to reach preferable combined effect; One ratio of first thickness T 1 of pattern dielectric layer 160 and second thickness T 2 of second electrode 140 is preferably substantially between 1 to 100, and a ratio of the 3rd thickness T 3 of first thickness T 1 of pattern dielectric layer 160 and third electrode 150 is preferably substantially between 1 to 100.One first distance B 1 that the pattern dielectric layer 160 and second electrode are 140 is preferably a second distance D2 who is equal to 150 of pattern dielectric layer 160 and third electrodes substantially, but not as limit.First distance B 1 of 140 at the pattern dielectric layer 160 and second electrode is preferably substantially between 0.01 to 0.4 with a ratio of one the 3rd distance B 3 of 150 of second electrode 140 and third electrodes; And the second distance D2 that pattern dielectric layer 160 and third electrode are 150 is preferably substantially between 0.01 to 0.4, to reach preferable fiting effect with a ratio of the 3rd distance B 3 of 150 of second electrode 140 and third electrodes.On the other hand, a dielectric constant of pattern dielectric layer 160 is preferably substantially between 1 to 10, impacts with the electric field situation to 150 of second electrode 140 and third electrodes.Pattern dielectric layer 160 is preferable to comprise for example for example acrylic resin (acrylic resin), pi (polyimide) or other material with above-mentioned dielectric constant characteristic that is fit to of silicon nitride (silicon nitride), silica (silicon oxide) and silicon oxynitride (silicon oxynitride), organic material of inorganic material.Pattern dielectric layer 160 is preferably has a curved surfaces 162, and this curved surfaces 162 can help Electric Field Distribution gentler, more meets the demand of Electric Field Distribution.
What be worth explanation is, as shown in Figure 1, in the present embodiment, first electrode, the 130 preferable anode electrode 130A that comprise, second electrode 140 is preferable to comprise a cathode electrode 140C, and the third electrode 150 preferable gate electrode 150G that comprise.Under the collocation situation of this electrode, first distance B 1 that the pattern dielectric layer 160 and second electrode are 140 is preferably the second distance D2 that is less than or equal to 150 of pattern dielectric layer 160 and third electrodes substantially, but not as limit.In addition, field emission component 100 can comprise more that one first field emission source (emitter) 171 is arranged on the cathode electrode 140C.First field emission source 171 is preferable to comprise a carbon nanotube (carbon nano-tube) material, but not as limit, and also can comprise that other have the emitting electrons materials with function.For example first field emission source 171 can also be an emission tip (Tip), and its material can be selected from molybdenum, tungsten, chromium etc. and alloy or laminated thereof.This is known by the common knowledge in this area, therefore repeats no more.
Please refer to Fig. 2 A, Fig. 2 B and Fig. 3, and please in the lump with reference to figure 1.Fig. 2 A is the electric field situation sketch map of the field emission component of a comparative example of the present invention.Fig. 2 B is the electric field situation sketch map of the field emission component of first preferred embodiment of the present invention.Fig. 3 is that the electric field situation of the field emission component of first preferred embodiment of the present invention and comparative example compares sketch map.Fig. 2 A is a comparative example; Wherein 150 nothings of second electrode 140 and third electrode are provided with the equipotential line distribution situation of pattern dielectric layer; Fig. 2 B is the equipotential line distribution situation that second electrode 140 and 150 of third electrodes are provided with pattern dielectric layer 160, and Fig. 3 has or not the electric field strength under the situation that pattern dielectric layer 160 is set to compare distribution situation.Shown in Fig. 2 A and Fig. 2 B; Being provided with of pattern dielectric layer 160 can make original equipotential line push with third electrode 150 to second electrode 140 on both sides; Make the space length between equipotential line and the equipotential line narrow down, and then make electric field strength grow on second electrode 140 and third electrode 150.Therefore; Second electrode 140 at present embodiment can comprise cathode electrode 140C; And third electrode 150 can comprise under the situation of gate electrode 150G; On gate electrode 150G, apply identical voltage, have the negative electrode of pattern dielectric layer of adding 160 on same position, measure the electric field height that can come than the negative electrode that does not add pattern dielectric layer 160.Illustrate further; As shown in Figure 3; The x axle is the cathode electrode frontier distance; The y axle is an electric field strength, and on behalf of second electrode 140 and 150 nothings of third electrode, curve A the electric field strength situation of pattern dielectric layer is set, and on behalf of second electrode 140 and 150 of third electrodes, curve B the electric field strength situation of pattern dielectric layer of being provided with 160 is arranged.The data background of Fig. 3 is that the dielectric constant in pattern dielectric layer 160 is 7; The ratio of first thickness T 1 and second thickness T 2 is 6; The ratio of first thickness T 1 and the 3rd thickness T 3 is 6, and the 3rd distance B 3 is under 2 centimetres the situation, to apply 2000 volts in anode electrode 130A; Apply 600 volts in gate electrode 150G, and make gained under the situation of cathode electrode 140C ground connection.In comparing, can learn that pattern dielectric layer 160 back electric field strength are set can strengthen about 35% by curve A and curve B near the electric field strength difference of the boundary of cathode electrode 140C.
Please refer to Fig. 4, and please in the lump with reference to figure 1.Fig. 4 be first preferred embodiment of the present invention field emission component second electrode and third electrode on look sketch map.As shown in Figure 4, second electrode 140 of present embodiment is preferably has a plurality of branch electrodes 141, and third electrode 150 is also preferable has a plurality of branch electrodes 151.Each branch electrodes 141 is preferably setting interlaced with each other with each branch electrodes 151, to obtain preferable field launching effect.
Hereinafter will describe to the different embodiment of array base palte of the present invention, and is simplified illustration, explains that below being primarily aimed at different the locating of each embodiment details, and no longer identical locating is repeated to give unnecessary details.In addition, components identical is to indicate with identical label in the various embodiments of the present invention, is beneficial to check one against another between each embodiment.
Please refer to Fig. 5.Fig. 5 is the sketch map of the field emission component of second preferred embodiment of the present invention.As shown in Figure 5; The field emission component 200 of present embodiment is with the different place of above-mentioned first preferred embodiment; In the present embodiment; First electrode, the 130 preferable anode electrode 130A that comprise, second electrode 140 is preferable to comprise first the moon/gate electrode 140B, and the third electrode 150 preferable second the moon/gate electrode 150B that comprise.Under the collocation situation of this electrode; Field emission component 200 preferable one first field emission sources 171 that can more comprise are arranged on first the moon/gate electrode 140B; And one second field emission source 172 be arranged on second the moon/gate electrode 150B, first the moon/gate electrode 140B and the second the moon/visual situation of gate electrode 150B that is to say is respectively as gate electrode or cathode electrode.The field emission component 200 of present embodiment is except first the moon/gate electrode 140B, second the moon/gate electrode 150B and second field emission source 172; The setting of all the other each parts is similar with the field emission component 100 of above-mentioned first preferred embodiment with material behavior, so at this and repeat no more.What be worth explanation is; Because first the moon/gate electrode 140B and second the moon/visual situation of gate electrode 150B are respectively as gate electrode or cathode electrode; Comprise that one uses the type of drive of alternating voltage (AC) or phase deviation (phase shift) type of drive of a use direct voltage so each first the moon/gate electrode 140B of present embodiment and the type of drive of each second the moon/gate electrode 150B are preferable, but not as limit.
Please refer to Fig. 6.Fig. 6 is the sketch map of the field emission component of the 3rd preferred embodiment of the present invention.As shown in Figure 6; The field emission component 300 of present embodiment is with the different place of above-mentioned first preferred embodiment; In the present embodiment; First distance B 1 that the pattern dielectric layer 160 and second electrode are 140 is preferably the second distance D2 less than 150 of pattern dielectric layer 160 and third electrodes, to be that a cathode electrode 140C and third electrode 150 are under the situation of a gate electrode 150G at second electrode 140, further promotes the electric field strength at cathode electrode 140C edge.The field emission component 300 of present embodiment is provided with the position near the cathode electrode 140C except pattern dielectric layer 160, and the setting of all the other each parts is similar with the field emission component 100 of above-mentioned first preferred embodiment with material behavior, so at this and repeat no more.
Please refer to Fig. 7.Fig. 7 is the sketch map of the field emission component of the 4th preferred embodiment of the present invention.As shown in Figure 7; The field emission component 400 of present embodiment is with the different place of above-mentioned first preferred embodiment; The field emission component 400 of present embodiment more comprises a fluorescent layer 180, is arranged between first electrode 130 and second electrode 140 and is arranged between first electrode 130 and the third electrode 150.In other words, fluorescent layer 180 is preferably and is arranged on the surface of first electrode 130 in the face of second electrode 140 and third electrode 150, but not as limit.The field emission component 400 of present embodiment is except fluorescent layer 180, and the setting of all the other each parts is similar with the field emission component 100 of above-mentioned first preferred embodiment with material behavior, so at this and repeat no more.
Please refer to Fig. 8.Fig. 8 is the sketch map of the field emission display device of the 5th preferred embodiment of the present invention.As shown in Figure 8, the field emission display device 500 of present embodiment comprises one first substrate 110, one second substrate 120, one first electrode 130, a plurality of second electrode 140, a plurality of third electrode 150, a fluorescent layer 180, a plurality of pattern dielectric layer 160, a plurality of first emission source 171 and a supporter 190.Second substrate 120 is to be oppositely arranged with first substrate 110.First electrode 130 is to be arranged at first substrate 110 in the face of on the first inner surface 110S of second substrate 120.Second electrode 140, third electrode 150 and pattern dielectric layer 160 are to be arranged at second substrate 120 in the face of on the second inner surface 120S of first substrate 110.Each third electrode 150 is to be arranged between adjacent two second electrodes 140.Fluorescent layer 180 is to be arranged between first electrode 130 and second electrode 140 and to be arranged between first electrode 130 and the third electrode 150.Pattern dielectric layer 160 is to be arranged between two adjacent second electrodes 140 and third electrode 150.Pattern dielectric layer 160 is disconnected from each other with second electrode 140, and pattern dielectric layer 160 is disconnected from each other with third electrode 150.One first thickness T 1 of each pattern dielectric layer 160 is one second thickness T 2 greater than each second electrode 140 substantially, and first thickness T 1 of pattern dielectric layer 160 is one the 3rd thickness T 3 greater than each third electrode 150 substantially.What be worth explanation is, in the present embodiment, and first electrode, the 130 preferable anode electrode 130A that comprise, each second electrode, 140 preferable cathode electrode 140C that comprise, and each third electrode 150 preferable gate electrode 150G that comprise.Under the collocation situation of this electrode, first distance B 1 that the pattern dielectric layer 160 and second electrode are 140 is preferably the second distance D2 that is less than or equal to 150 of pattern dielectric layer 160 and third electrodes substantially, but not as limit.In addition, first field emission source 171 is preferably and is arranged on the cathode electrode 140C, but not as limit.Supporter 190 is to be arranged between first substrate 110 and second substrate 120, with so that keep a gap between first substrate 110 and second substrate 120.In the present embodiment, each second electrode 140, each third electrode 150 and each pattern dielectric layer 160 set-up mode to each other are similar with above-mentioned first preferred embodiment with the thickness situation of arranging in pairs or groups substantially, at this and repeat no more.What be worth explanation is, the fluorescent layer 180 of present embodiment can comprise one first fluorescent layer 180A, one second fluorescent layer 180B and one the 3rd fluorescent layer 180C respectively with different second electrode 140 and third electrode 150 corresponding settings.Can make it produce different exciting lights respectively through adjusting each other composition of the first fluorescent layer 180A, the second fluorescent layer 180B and the 3rd fluorescent layer 180C, and then can be used to produce the display frame of different colours.
Please refer to Fig. 9.Fig. 9 is the sketch map of the field emission display device of the 6th preferred embodiment of the present invention.As shown in Figure 9; The field emission display device 600 of present embodiment is with the different place of above-mentioned the 5th preferred embodiment; In the present embodiment; First electrode, the 130 preferable anode electrode 130A that comprise, each second electrode, 140 preferable first the moon/gate electrode 140B that comprise, and each third electrode 150 preferable second the moon/gate electrode 150B that comprise.Under the collocation situation of this electrode, field emission display device 600 is preferable to comprise that a plurality of first field emission sources 171 are arranged at respectively on each first the moon/gate electrode 140B, and a plurality of second field emission source 172 is arranged at respectively on second the moon/gate electrode 150B.The field emission display device 600 of present embodiment is except first the moon/gate electrode 140B, second the moon/gate electrode 150B and second field emission source 172; The setting of all the other each parts is similar with the field emission display device 500 of above-mentioned the 5th preferred embodiment with material behavior, so at this and repeat no more.What be worth explanation is; Because first the moon/gate electrode 140B and second the moon/visual situation of gate electrode 150B are respectively as gate electrode or cathode electrode; Comprise that one uses the type of drive or a phase deviation type of drive of alternating voltage so each first the moon/gate electrode 140B of present embodiment and the type of drive of each second the moon/gate electrode 150B are preferable, but not as limit.
Please refer to Figure 10.Figure 10 is the sketch map of the field emission display device of the 7th preferred embodiment of the present invention.Shown in figure 10; The field emission display device 700 of present embodiment is with the different place of above-mentioned the 5th preferred embodiment; In the present embodiment; First distance B 1 that the pattern dielectric layer 160 and second electrode are 140 is preferably the second distance D2 less than 150 of pattern dielectric layer 160 and third electrodes, to be that a cathode electrode 140C and third electrode 150 are under the situation of a gate electrode 150G at second electrode 140, further promotes the electric field strength at each cathode electrode 140C edge.The field emission display device 700 of present embodiment is provided with the position near each cathode electrode 140C except each pattern dielectric layer 160; The setting of all the other each parts is similar with the field emission display device 500 of above-mentioned the 5th preferred embodiment with material behavior, so at this and repeat no more.
Comprehensive the above; Field emission component of the present invention and field emission display device are to be used between cathode electrode and gate electrode pattern dielectric layer is set; Make and under identical luminous efficiency, to effectively reduce grid voltage, and then reduce overall power and make related elements on the problem in design and useful life, make moderate progress.
The above is merely preferred embodiment of the present invention, and all equalizations of doing according to claims of the present invention change and modify, and all should belong to protection scope of the present invention.
Claims (18)
1. field emission component comprises:
One first substrate;
One second substrate is oppositely arranged with this first substrate;
One first electrode is arranged on one first inner surface of this first real estate to this second substrate;
One second electrode is arranged on one second inner surface of this second real estate to this first substrate;
One third electrode is arranged on this second inner surface of this second substrate; And
One pattern dielectric layer is arranged on this second inner surface of this second substrate, and this pattern dielectric layer is to be arranged between this second electrode and this third electrode;
Wherein this pattern dielectric layer is disconnected from each other with this second electrode; This pattern dielectric layer is disconnected from each other with this third electrode; One first thickness of this pattern dielectric layer is one second thickness greater than this second electrode substantially, and this first thickness of this pattern dielectric layer is one the 3rd thickness greater than this third electrode substantially.
2. field emission component as claimed in claim 1 is characterized in that, this second electrode and this third electrode are to be made up of the same material layer.
3. field emission component as claimed in claim 1 is characterized in that, this second electrode and this third electrode have a plurality of branch electrodes respectively, and respectively this branch electrodes is setting interlaced with each other.
4. field emission component as claimed in claim 1 is characterized in that, this pattern dielectric layer is to be parallel on the direction of this second substrate in one to be arranged between this second electrode and this third electrode.
5. field emission component as claimed in claim 1 is characterized in that, a dielectric constant of this pattern dielectric layer is substantially between 1 to 10.
6. field emission component as claimed in claim 1; It is characterized in that; One ratio of this second thickness of this of this pattern dielectric layer first thickness and this second electrode is substantially between 1 to 100, and a ratio of the 3rd thickness of this first thickness of this pattern dielectric layer and this third electrode is substantially between 1 to 100.
7. field emission component as claimed in claim 1 is characterized in that, this pattern dielectric layer and this second interelectrode one first distance are second distances that is equal between this pattern dielectric layer and this third electrode substantially.
8. field emission component as claimed in claim 1; It is characterized in that; This pattern dielectric layer and this second interelectrode one first distance is between 0.01 to 0.4 with a ratio of one the 3rd distance between this second electrode and this third electrode substantially, and the second distance between this pattern dielectric layer and this third electrode to follow a ratio of the 3rd distance between this second electrode and this third electrode be substantially between 0.01 to 0.4.
9. field emission component as claimed in claim 1 is characterized in that, this first electrode is an anode electrode, and this second electrode is a cathode electrode, and this third electrode is a gate electrode.
10. field emission component as claimed in claim 9 is characterized in that, this pattern dielectric layer and this second interelectrode one first distance are second distances that is less than or equal between this pattern dielectric layer and this third electrode substantially.
11. field emission component as claimed in claim 9 is characterized in that, comprises that more one first field emission source is arranged on this cathode electrode.
12. field emission component as claimed in claim 1 is characterized in that, this first electrode is an anode electrode, and this second electrode is first the moon/gate electrode, and this third electrode is second the moon/gate electrode.
13. field emission component as claimed in claim 12 is characterized in that, comprise that more one first field emission source is arranged on this first the moon/gate electrode, and one second field emission source is arranged on this second the moon/gate electrode.
14. field emission component as claimed in claim 13 is characterized in that, the type of drive of this first the moon/gate electrode and this second the moon/gate electrode comprises that one uses the type of drive of alternating voltage.
15. field emission component as claimed in claim 1 is characterized in that, more comprises a fluorescent layer, is arranged between this first electrode and this second electrode and is arranged between this first electrode and this third electrode.
16. field emission component as claimed in claim 1 is characterized in that, this pattern dielectric layer has a curved surfaces.
17. a field emission display device comprises:
One first substrate;
One second substrate is oppositely arranged with this first substrate;
One first electrode is arranged at this first real estate on one of this second substrate first inner surface;
A plurality of second electrodes are arranged on one second inner surface of this second real estate to this first substrate;
A plurality of third electrodes are arranged on this second inner surface of this second substrate, and wherein respectively this third electrode is to be arranged between adjacent two these second electrodes;
One fluorescent layer is arranged between this first electrode and these second electrodes and is arranged between this first electrode and these third electrodes; And
At least one pattern dielectric layer is arranged on this second inner surface of this second substrate, and this pattern dielectric layer is to be arranged between two adjacent these second electrodes and this third electrode;
Wherein this pattern dielectric layer is disconnected from each other with these second electrodes; This pattern dielectric layer is disconnected from each other with these third electrodes; One first thickness of this pattern dielectric layer is greater than one second thickness of this second electrode respectively substantially, and this first thickness of this pattern dielectric layer is greater than one the 3rd thickness of this third electrode respectively substantially.
18. field emission display device as claimed in claim 17 is characterized in that, more comprises at least one supporter, is arranged between this first substrate and this second substrate, with so that keep a gap between this first substrate and this second substrate.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW100148339 | 2011-12-23 | ||
| TW100148339A TWI437602B (en) | 2011-12-23 | 2011-12-23 | Field emission unit and field emission display device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102592925A true CN102592925A (en) | 2012-07-18 |
| CN102592925B CN102592925B (en) | 2015-03-11 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210067736.1A Expired - Fee Related CN102592925B (en) | 2011-12-23 | 2012-03-12 | Field emission element and field emission display device |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN102592925B (en) |
| TW (1) | TWI437602B (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020060514A1 (en) * | 2000-11-17 | 2002-05-23 | Masayuki Nakamoto | Field emission cold cathode device of lateral type |
| US20050202745A1 (en) * | 2004-03-12 | 2005-09-15 | Canon Kabushiki Kaisha | Method of producing an electron emission device, method of producing an electron source, method of producing an image display device, and method of driving an electron emission device |
| EP1746634A2 (en) * | 2005-07-21 | 2007-01-24 | Samsung SDI Co., Ltd. | Electron emission device, electron emission type backlight unit and flat display appaatus having the same |
| CN101308755A (en) * | 2007-05-17 | 2008-11-19 | 东元电机股份有限公司 | Plane emission type cathode construction of field emission display apparatus |
| CN102097272A (en) * | 2011-01-10 | 2011-06-15 | 福州大学 | Triode structured field emission display (FED) with anode and grid on same substrate |
-
2011
- 2011-12-23 TW TW100148339A patent/TWI437602B/en not_active IP Right Cessation
-
2012
- 2012-03-12 CN CN201210067736.1A patent/CN102592925B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020060514A1 (en) * | 2000-11-17 | 2002-05-23 | Masayuki Nakamoto | Field emission cold cathode device of lateral type |
| US20050202745A1 (en) * | 2004-03-12 | 2005-09-15 | Canon Kabushiki Kaisha | Method of producing an electron emission device, method of producing an electron source, method of producing an image display device, and method of driving an electron emission device |
| EP1746634A2 (en) * | 2005-07-21 | 2007-01-24 | Samsung SDI Co., Ltd. | Electron emission device, electron emission type backlight unit and flat display appaatus having the same |
| CN101308755A (en) * | 2007-05-17 | 2008-11-19 | 东元电机股份有限公司 | Plane emission type cathode construction of field emission display apparatus |
| CN102097272A (en) * | 2011-01-10 | 2011-06-15 | 福州大学 | Triode structured field emission display (FED) with anode and grid on same substrate |
Non-Patent Citations (1)
| Title |
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| 陆果: "《基础物理学教程 上卷》", 31 May 2006, 高等教育出版社 * |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201327613A (en) | 2013-07-01 |
| CN102592925B (en) | 2015-03-11 |
| TWI437602B (en) | 2014-05-11 |
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