CN102591158A - Method for accurately measuring WEE (wafer edge exclusion) width - Google Patents
Method for accurately measuring WEE (wafer edge exclusion) width Download PDFInfo
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- CN102591158A CN102591158A CN2012100394786A CN201210039478A CN102591158A CN 102591158 A CN102591158 A CN 102591158A CN 2012100394786 A CN2012100394786 A CN 2012100394786A CN 201210039478 A CN201210039478 A CN 201210039478A CN 102591158 A CN102591158 A CN 102591158A
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- wee
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Abstract
The invention discloses a method for accurately measuring a WEE (wafer edge exclusion) width, which comprises the following steps of: firstly, arranging a baffle for photoetching machines on photoetching align marks which are used for exposure; then, according to arrangement requirements, sequentially exposing and then arranging the photoetching align marks on the edge of a wafer; and finally, after a WEE operation is preformed, calculating the WEE width according to the layout data of pattern exposure which does not exist outside a WEE demarcation line between a WEE demarcation line and the edge of the wafer, the number of complete photoetching align marks stored after development and a situation that whether an incomplete photoetching align mark contains, wherein the number of the photoetching align marks is calculated by using a forward-one method, and a part less than a complete photoetching align mark is calculated as a complete photoetching align mark. According to the invention, the WEE width is determined by using a method for carrying out pattern exposure on edges, a pattern for judging the WEE width can be observed under a microscope, and the size of the pattern is far less than the WEE accuracy, thereby ensuring the test accuracy; and in addition, the implementation of the method disclosed by the invention is not restricted by the conditions of a semiconductor production line, and the WEE width can be determined by using the existing resources.
Description
Technical field
The invention belongs to wafer boundary elimination technique field, be specifically related to a kind of method of accurate measurement WEE width.
Background technology
Because process limitations, Waffer edge often defective is very high, is easy to form the defective source at the figure of Waffer edge, therefore behind gluing, needs to remove the glue of Waffer edge certain width.WEE is the abbreviation of Wafer Edge Exclusion (wafer boundary eliminating); Its process is to adopt the mode of exposure imaging to remove the photoresist in the certain width zone, disk edge; And the width of the WEE of each photoetching process level is inconsistent; The accuracy of WEE directly has influence on the useful area on the disk, but therefore the i.e. tube core number of reality output on the disk needs accurately control.
At present, the measuring method of WEE width mainly contains two kinds, and a kind of is that the microscope that utilizes eyepiece to have scale is measured, and another kind is directly to measure with chi, and the microscope that has scale is not that each tame semiconductor production producer all is equipped with, and its usable range is limited.Therefore the design accuracy of WEE is 0.1 millimeter, directly measures obviously inaccurately with chi, and its test error has 0.5 millimeter at least.
Summary of the invention
In order to overcome the shortcoming of above-mentioned prior art, the object of the present invention is to provide a kind of method of accurate measurement WEE width, this method has solved the big problem of test error in the prior art, has the high characteristics of measuring accuracy.
In order to achieve the above object, the present invention adopts following technical scheme:
A kind of method of accurate measurement WEE width comprises the steps:
Step 1: the litho machine baffle plate is arranged on the photoetching alignment mark that needs the exposure use;
Step 2: the photoetching alignment mark made public successively is placed on Waffer edge, places to require as follows:
1) placement location of photoetching alignment mark is at least four positions up and down;
2) each adjacent photoetching alignment mark staggers mutually;
3) spacing between each adjacent photoetching alignment mark is 0, and promptly the step distance of litho machine is a photoetching alignment mark size;
4) outermost photoetching alignment mark apart from Waffer edge distance less than 0.5 millimeter;
Step 3: behind WEE; The complete photoetching alignment mark number of preserving according to the back of developing outside the WEE separatrix between WEE separatrix 1 and the Waffer edge 3 non-existent figure 2 topology data that makes public and the back of developing reaches whether comprise imperfect photoetching alignment mark; Calculate the WEE width; Photoetching alignment mark quantity adopts an into method, a complete photoetching alignment mark of less than by a calculating, concrete computing formula is formula 1 and formula 2:
Behind WEE, when the photoetching alignment mark is full graphics, computing formula such as formula 1:
Complete photoetching alignment mark number behind WEE width=photoetching alignment mark width * WEE+photoetching alignment mark distance * photoetching alignment mark spacing number 1
Behind WEE, when the photoetching alignment mark comprises imperfect figure, computing formula such as formula 2:
WEE width=photoetching alignment mark width * (complete photoetching alignment mark number+1 behind the WEE)+photoetching alignment mark distance * photoetching alignment mark spacing number 2
The photoetching alignment mark that exposure is used satisfies following condition:
The photoetching alignment mark that exposure is used comprises periodic repetitive pattern, so that judge the width or the height of imperfect photoetching alignment mark according to the figure number;
The precision of WEE is 0.1 millimeter, thus in the photoetching alignment mark cycle of repetitive pattern need satisfy this accuracy requirement, the actual spendable 8-40 micron that is of a size of;
The number of the repetitive pattern that keeps in the imperfect photoetching alignment mark is in microscopically identification, so its minimum figure should be discerned by optical microscope, and minimum dimension is greater than 2 microns.
The inventive method is compared with prior art, has following advantage:
1, the present invention is employed in the width that the method for edge exposure figure is confirmed WEE, is used to judge that the figure of WEE width can observe at microscopically, and its size has guaranteed the accuracy of test much smaller than the precision of WEE.
2, enforcement of the present invention does not receive the condition restriction of semiconductor production line, utilizes existing resource just can measure the WEE width.
Description of drawings
Fig. 1 is a synoptic diagram behind the embodiment 1WEE.
Fig. 2 is a synoptic diagram behind the embodiment 2WEE.
Fig. 3 is a synoptic diagram behind the embodiment 3WEE.
Reference numeral: 1---WEE separatrix; 2---the non-existent figure in back develops outside the WEE separatrix; 3---Waffer edge;
Embodiment
Below in conjunction with accompanying drawing and embodiment the present invention is done further explain.
Embodiment 1:
Step 1: the litho machine baffle plate is arranged on the photoetching alignment mark that needs the exposure use;
Step 2: the photoetching alignment mark made public successively is placed on Waffer edge, places to require as follows:
1) placement location of photoetching alignment mark is at least four positions up and down;
2) each adjacent photoetching alignment mark staggers mutually;
3) spacing between each adjacent photoetching alignment mark is 0, and promptly the step distance of litho machine is a photoetching alignment mark size;
4) outermost photoetching alignment mark apart from Waffer edge distance less than 0.5 millimeter;
Step 3: behind WEE; The complete photoetching alignment mark number of preserving according to the back of developing outside the WEE separatrix between WEE separatrix 1 and the Waffer edge 3 non-existent figure 2 topology data that makes public and the back of developing reaches whether comprise imperfect photoetching alignment mark, calculates the width of WEE; As shown in Figure 1; Slice among the figure is represented the photoetching alignment mark, and the distance between each photoetching alignment mark is 8 μ m, and photoetching alignment mark width is 8.8 μ m;, the WEE exposed areas do not have photoresist after developing; Therefore the WEE separatrix 1 among Fig. 1 is the separatrix that glue zone and adhesive-free area territory are arranged, and the full graphics that WEE comprised among the figure is two photoetching alignment marks, and photoetching alignment mark quantity adopts an into method; A complete photoetching alignment mark of less than by a calculating; According to the lap position of WEE separatrix 1 and photoetching alignment mark, and the size of photoetching alignment mark periodic pattern, the width that just can calculate WEE is 8.8 μ m * 3+8 μ m * 2=42.4 μ m.
Embodiment 2:
Step 1: the litho machine baffle plate is arranged on the photoetching alignment mark that needs the exposure use;
Step 2: the photoetching alignment mark made public successively is placed on Waffer edge, places to require as follows:
1) placement location of photoetching alignment mark is at least four positions up and down;
2) each adjacent photoetching alignment mark staggers mutually;
3) spacing between each adjacent photoetching alignment mark is 0, and promptly the step distance of litho machine is a photoetching alignment mark size;
4) outermost photoetching alignment mark apart from Waffer edge distance less than 0.5 millimeter;
Step 3: behind WEE; The complete photoetching alignment mark number of preserving according to the back of developing outside the WEE separatrix between WEE separatrix 1 and the Waffer edge 3 non-existent figure 2 topology data that makes public and the back of developing reaches whether comprise imperfect photoetching alignment mark, calculates the width of WEE; As shown in Figure 2; Slice among the figure is represented the photoetching alignment mark, and the distance between each photoetching alignment mark is 8 μ m, and photoetching alignment mark width is 10 μ m;, the WEE exposed areas do not have photoresist after developing; Therefore the WEE separatrix 1 among Fig. 2 is the separatrix that glue zone and adhesive-free area territory are arranged, and the full graphics that WEE comprised among the figure is three photoetching alignment marks, and photoetching alignment mark quantity adopts an into method; A complete photoetching alignment mark of less than by a calculating; According to the lap position of WEE separatrix 1 and photoetching alignment mark, and the size of photoetching alignment mark periodic pattern, the width that just can calculate WEE is 10 μ m * 4+8 μ m * 3=64 μ m.
Step 1: as shown in Figure 1, the litho machine baffle plate is arranged on the photoetching alignment mark that needs the exposure use;
Step 2: the photoetching alignment mark made public successively is placed on Waffer edge, places to require as follows:
1) placement location of photoetching alignment mark is at least four positions up and down;
2) each adjacent photoetching alignment mark staggers mutually;
3) spacing between each adjacent photoetching alignment mark is 0, and promptly the step distance of litho machine is a photoetching alignment mark size;
4) outermost photoetching alignment mark apart from Waffer edge distance less than 0.5 millimeter;
Step 3: behind WEE; The complete photoetching alignment mark number of preserving according to the topology data of back non-existent figure 2 exposures of developing outside the WEE separatrix between WEE separatrix 1 and the Waffer edge 3 and the back of developing and do not comprise imperfect photoetching alignment mark is calculated the width of WEE; As shown in Figure 3; Each lattice among the figure is represented a photoetching alignment mark, and the distance between each photoetching alignment mark is 0 μ m, and photoetching alignment mark width is 8 μ m;, the WEE exposed areas do not have photoresist after developing; Therefore the WEE separatrix 1 among Fig. 3 is the separatrix that glue zone and adhesive-free area territory are arranged, and the full graphics that WEE comprised among the figure is two photoetching alignment marks, and photoetching alignment mark quantity adopts an into method; A complete photoetching alignment mark of less than by a calculating; According to the lap position of WEE separatrix 1 and photoetching alignment mark, and the size of photoetching alignment mark periodic pattern, the width that just can calculate WEE is 8 μ m * 3=24 μ m.
Claims (2)
1. a method of accurately measuring the WEE width is characterized in that: comprise the steps:
Step 1: the litho machine baffle plate is arranged on the photoetching alignment mark that needs the exposure use;
Step 2: the photoetching alignment mark made public successively is placed on Waffer edge, places to require as follows:
1) placement location of photoetching alignment mark is at least four positions up and down;
2) each adjacent photoetching alignment mark staggers mutually;
3) spacing between each adjacent photoetching alignment mark is 0, and promptly the step distance of litho machine is a photoetching alignment mark size;
4) outermost photoetching alignment mark apart from Waffer edge distance less than 0.5 millimeter;
Step 3: behind WEE; The complete photoetching alignment mark number of preserving according to the non-existent figure in back (2) that develops outside the WEE separatrix between WEE separatrix (1) and the Waffer edge (3) topology data that makes public and the back of developing reaches whether comprise imperfect photoetching alignment mark; Calculate the WEE width; Photoetching alignment mark quantity adopts an into method, a complete photoetching alignment mark of less than by a calculating, concrete computing formula is formula 1 and formula 2:
Behind WEE, when the photoetching alignment mark is full graphics, computing formula such as formula 1:
Complete photoetching alignment mark number behind WEE width=photoetching alignment mark width * WEE+photoetching alignment mark distance * photoetching alignment mark spacing number 1
Behind WEE, when the photoetching alignment mark comprises imperfect figure, computing formula such as formula 2:
WEE width=photoetching alignment mark width * (complete photoetching alignment mark number+1 behind the WEE)+photoetching alignment mark distance * photoetching alignment mark spacing number 2
2. method according to claim 1 is characterized in that: the photoetching alignment mark that exposure is used satisfies following condition:
The photoetching alignment mark that exposure is used comprises periodic repetitive pattern, so that judge the width or the height of imperfect photoetching alignment mark according to the figure number;
The precision of WEE is 0.1 millimeter, thus in the photoetching alignment mark cycle of repetitive pattern need satisfy this accuracy requirement, the actual spendable 8-40 micron that is of a size of;
The number of the repetitive pattern that keeps in the imperfect photoetching alignment mark is in microscopically identification, so its minimum figure should be discerned by optical microscope, and minimum dimension is greater than 2 microns.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2012100394786A CN102591158A (en) | 2012-02-21 | 2012-02-21 | Method for accurately measuring WEE (wafer edge exclusion) width |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105137727A (en) * | 2015-09-22 | 2015-12-09 | 中国科学院上海技术物理研究所 | Device for removing photoresist on edges of multiple chips |
| CN105448891A (en) * | 2014-08-07 | 2016-03-30 | 无锡华润上华科技有限公司 | Monitoring wafer for edge removing width and manufacturing method thereof |
| CN106601647A (en) * | 2016-12-29 | 2017-04-26 | 南通通富微电子有限公司 | Semiconductor used coating machine and center detection and correction method |
| CN115546215A (en) * | 2022-12-01 | 2022-12-30 | 全芯智造技术有限公司 | Method, apparatus, and medium for evaluating measurement results |
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| CN101174573A (en) * | 2006-11-03 | 2008-05-07 | 中芯国际集成电路制造(上海)有限公司 | Testing wafer and testing method for edge bead removal |
| KR20080084274A (en) * | 2007-03-15 | 2008-09-19 | 주식회사 하이닉스반도체 | Forming method of semiconductor device |
| CN101750038A (en) * | 2008-12-15 | 2010-06-23 | 中芯国际集成电路制造(上海)有限公司 | Test wafer for edge detection and wafer edge detection method |
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2012
- 2012-02-21 CN CN2012100394786A patent/CN102591158A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101174573A (en) * | 2006-11-03 | 2008-05-07 | 中芯国际集成电路制造(上海)有限公司 | Testing wafer and testing method for edge bead removal |
| KR20080084274A (en) * | 2007-03-15 | 2008-09-19 | 주식회사 하이닉스반도체 | Forming method of semiconductor device |
| CN101750038A (en) * | 2008-12-15 | 2010-06-23 | 中芯国际集成电路制造(上海)有限公司 | Test wafer for edge detection and wafer edge detection method |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105448891A (en) * | 2014-08-07 | 2016-03-30 | 无锡华润上华科技有限公司 | Monitoring wafer for edge removing width and manufacturing method thereof |
| CN105137727A (en) * | 2015-09-22 | 2015-12-09 | 中国科学院上海技术物理研究所 | Device for removing photoresist on edges of multiple chips |
| CN105137727B (en) * | 2015-09-22 | 2022-11-08 | 中国科学院上海技术物理研究所 | Multi-chip edge glue removing device |
| CN106601647A (en) * | 2016-12-29 | 2017-04-26 | 南通通富微电子有限公司 | Semiconductor used coating machine and center detection and correction method |
| CN106601647B (en) * | 2016-12-29 | 2020-02-14 | 南通通富微电子有限公司 | Coating machine for semiconductor and center testing and correcting method |
| CN115546215A (en) * | 2022-12-01 | 2022-12-30 | 全芯智造技术有限公司 | Method, apparatus, and medium for evaluating measurement results |
| CN115546215B (en) * | 2022-12-01 | 2023-03-14 | 全芯智造技术有限公司 | Method, apparatus and medium for evaluating measurement result of transistor line width |
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Application publication date: 20120718 |