CN102590669B - Method for measuring movement speed of ferroelectric thin film electric domain area and coercive field relationship - Google Patents
Method for measuring movement speed of ferroelectric thin film electric domain area and coercive field relationship Download PDFInfo
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Abstract
The invention particularly provides a method for measuring movement speed of a ferroelectric thin film electric domain area and a coercive field relationship, belonging to the technical field of solid dielectric performance test. The method is characterized in that in the process of charging of a ferroelectric container, when a voltage on a ferroelectric thin film rises from zero to a target voltage, a small electric domain rate of a coercive voltage is firstly reversed, the reverse current is proportional to the electric domain movement speed; and after the electric domain reversal is finished, the electric domains with high coercive voltage are reversed in sequence with the gradual increment of the charging voltage of the thin film, namely, the distribution of the coercive voltage of the ferroelectric thin film along with the variation of different areas is converted into the variation mode that the electric domain polarized reversal current changes along the time from the original distribution mode that the coercive voltages are ordered from small to large. Under the externally applied pulse voltage between 0.1 V and 100 V, the electric domain reversal current or electric domain movement speed can be changed between 1 nA and 1 A through adjusting the resistance in a general series circuit between 100 ohms and 100 megohms, thereby obtaining the coercive field in different areas with the change of the electric domain movement speed.
Description
Technical field
The invention belongs to solid dielectric technical field of performance test, be specifically related to the measuring method of a kind of ferroelectric film electric domain regional movement speed and coercive electric field relation.
Background technology
Ferroelectric thin-flim materials has higher spontaneous polarization strength and larger specific inductive capacity and can be applicable to microwave device, AC electroluminescent device and the thin film sensor etc. of non-volatile random-access memory (FRAM), dynamic random read memory (DRAM), non-refrigerated infrared detector, thin film dielectrics capacitor, Electric Field Modulated.Along with the raising of device integration density, device cell size is significantly dwindled, and has approached atom or molecular level, the FRAM of future and can reach～Tb/in of the storage density of DRAM
2magnitude, approaches the magnetic recording hard disk level of using vertical technologies to manufacture at present.
In ferroelectric thin film there is polarization reversal in electricdomain under impressed voltage effect, and electricdomain can be in logical zero and " 1 " two states, is the physical basis of ferroelectric memory device application; When polarization reversal occurs, the voltage being applied on ferroelectric thin film is called as coercive voltage, corresponding the minimum erasable voltage of storer.In theory, polarization reversal takes the lead in occurring in film lattice imperfection place, forms reverse daughter nucleus, and then daughter nucleus is grown up, electricdomain generation lateral magnification, and last adjacent electricdomain merges, and has realized the polarization reversal of whole film.From microcosmic, the formation of daughter nucleus need to overcome an energy barrier, and the height of this potential barrier depends on temperature, electric field and area defects CONCENTRATION DISTRIBUTION etc.Due to the difference of grain and grain boundary place defect distribution in film, under the effect of same extra electric field, the daughter nucleus forming energy on the reverse farmland in these regions is different, be that potential barrier has a distribution with film region, thereby cause the coercive electric field of domain reversal of zones of different different, instead of a fixed value, the reversion of electricdomain takes the lead in from the less region of barrier height occurring.Along with the development of microelectric technique, need to measure electricdomain movement velocity in ferroelectric thin film, corresponding the time of polarization reversal and the erasable speed of storer.How to improve the erasable speed of storer, needed the foundation of dynamics of domain movement mechanism in degrading film zones of different and range of influence coercive voltage size, obtain the information of these region electricdomains and current measuring technique is had higher requirement.Commercial ferroelectric tester at present, as Radiant Premier I/II and aixACCT TF2000 analyzer etc., based on improved Virtual Ground or Sawyer-Tower circuit, by apply a series of lower than 1 megahertz (MHz) AC signal to ferroelectric thin film, then test the P-E ferroelectric hysteresis loop of ferroelectric thin film.The test frequency of this AC signal is different from the square pulse (being less than for 50 nanoseconds) of memory read/write on the one hand, is difficult to react the true erasable speed of storer; On the other hand, the low frequency ferroelectric hysteresis loop that people obtain from the ferroelectric tester of commercialization, can only obtain the average coercive voltage of a domain reversal, can not accurately express the true speed reversal of region electricdomain.Although the needle point of piezoelectric forces microscope (PFM) can apply a local electric field, domain reversal information in testing film region under lower electricdomain movement rate.But the needle point electric field in this technology is non-uniform Distribution, exactly conversion zone dynamics of domain movement process; In addition, the electricdomain movement rate that this technology is measured and the scope of temperature are all restricted, in cannot characterizing region in the variation range of several orders of magnitude, the relation of electricdomain movement rate and activation electric field, can not reflect the distribution of electricdomain nucleation barrier in film region.
Summary of the invention
The object of the invention is to for the complicacy of ferroelectric film electric domain nucleation in zones of different and the limitation of diversity and existing Correlative measurement method, propose a kind ofly can adapt to various situations and the high ferroelectric film electric domain regional movement speed of measuring accuracy and the measuring method of coercive electric field relation.
The ferroelectric film electric domain regional movement speed that the present invention proposes and the measuring method of coercive electric field relation, be embodied in ferroelectric thin film coercive voltage and be converted into film areal distribution the electrical measurement that electricdomain Switching Currents distributes in time, thereby in can the time range from second to nanosecond order, measure the relation of coercive electric field and electricdomain movement velocity in film zones of different.
A kind of ferroelectric film electric domain regional movement speed that the present invention proposes and the measuring method of coercive electric field relation, concrete employing with ferroelectric film memory read and write on all four electric pulse mensuration.Its measuring principle is, in ferroelectric condenser charging process, on ferroelectric thin film voltage gradually from above freezing while being raised to target voltage, the electricdomain that coercive voltage the is less reversion that takes the lead in, reverse current and electricdomain movement velocity are proportional; After this domain reversal, along with the progressively increase of film charging voltage, the electricdomain that coercive voltage is higher is reversed successively, is converted into electricdomain Switching Currents over time by ferroelectric thin film coercive voltage with the distribution of zones of different according to coercive electric field order from small to large.Under applying pulse voltage between 0.1V-100V, regulate between 100 Ω-100M Ω by resistance in total series circuit, can between 1nA-1A, change domain reversal electric current or electricdomain movement velocity, thus obtain in zones of different coercive electric field with the variation of electricdomain movement velocity.Wherein, the present invention has provided corresponding computing formula, applies voltage or resistance by change, obtains electricdomain Switching Currents temporal evolution in zones of different.Concrete measuring process is as follows:
(1), ferroelectric thin film is applied to pulse voltage
v, at impressed voltage
vwith a total resistance in series
r t under effect, ferroelectric thin film coercive voltage temporal evolution is:
V c 0(
t 0）<
V c 1(
t 1)<
V c 2(
t 2)<
V c 3(
t 3)…<
V c m(
t m) (1)
Wherein
v c 0the coercive voltage that is the 0th region electricdomain exists
t 0moment starts reversion,
v c 1(
t 1) be that the coercive voltage of the 1st region electricdomain exists
t 1moment starts reversion; By that analogy,
v c m(
t m) be that the coercive voltage of m region electricdomain exists
t mmoment starts reversion; The time sequencing of domain reversal is
t 0<
t 1<
t 2<
t 3<
t m.
(2), according to step (1), have formula:
Wherein
q(
t m ) be the measured total electrical charge surface density that starts reversion to m electricdomain of ferroelectric condenser,
c f (V)for the electric capacity of ferroelectric condenser,
v c m be the coercive voltage of m region electricdomain,
sfor the electrode area of ferroelectric condenser, △
p i(
v c i) at the changing value of the caused polarization intensity of i region domain reversal;
q (t m )do not change with the change of total series impedance in circuit.
(3), according to step (1), ferroelectric thin film m region domain reversal electric current and coercive voltage close and are:
Wherein
i sw (
t m ) be the Switching Currents of m region electricdomain,
vfor impressed voltage,
v c (
t m ) be the coercive voltage of m region electricdomain,
r t for total resistance in series in circuit;
i sw (t)[
i sw (t m )] can pass through oscilloscope measurement
r t the voltage at two ends is obtained over time.
(4), according to step (3) measurement data, and equal charging current to time integral formula by capacitor charging stored charge:
(wherein
q(
t m ) be ferroelectric condenser charging stored charge surface density,
sfor ferroelectric condenser electrode area,
i sw (
t) for time dependent Switching Currents) calculate ferroelectric condenser charging stored charge surface density
q(
t m ).
(5), read ferroelectric thin film region electricdomain coercive voltage, specifically can divide two kinds of common and high precision to read:
Common the reading of ferroelectric thin film region electricdomain coercive voltage (having ignored film contact resistance, the impacts of uncertain factor on region coercive voltage such as current noise fluctuating):
1. according to step (2), determine that ferroelectric condenser ferroelectric thin film m electricdomain starts the total electrical charge surface density of reversion
q (t m );
2. according to step (4), obtain ferroelectric condenser ferroelectric thin film m electricdomain and start the total electrical charge surface density of reversing
q (t m )corresponding
t m moment and
i sw (t m );
3. calculated by step (3) formula
v c (t m ).
Ferroelectric thin film region electricdomain coercive voltage high precision reads: in order more correctly to measure
v c (t m ), according to impressed voltage
v, between 0.6 times to 2 times impressed voltage value (0.6
v-2
v), change impressed voltage can fluctuate
v, at this moment
v c (t m )change very littlely, substantially can be considered a constant.
1. at an impressed voltage
vunder
,according to step (2), determine that ferroelectric condenser ferroelectric thin film m electricdomain starts the total electrical charge surface density of reversion
q (t m );
2. according to step (4), obtain ferroelectric condenser ferroelectric thin film m electricdomain and start the total electrical charge surface density of reversing
q (t m )corresponding
t m moment and
i sw (t m );
3. according to impressed voltage
vvalue, between 0.6 times to 2 times impressed voltage value (0.6
v-2
v), change impressed voltage can fluctuate
v, repeat 1. above-mentioned and 2. two pacing amounts, draw
i sw (t m )-
vrelational expression, carries out Function Fitting by step (3) formula, draws
v c (t m ).
It is right that the reading of this matching can be got rid of film contact resistance etc.
v c (t m )the impact of measured value.
(6), under applying pulse voltage between 0.1V-100V, by resistance in total series circuit
r t value regulates between 100 Ω-100M Ω, and repeating step (1) is to (5), can be between 1nA-1A corresponding measurement m region electricdomain
i sw -
v c relation, the i.e. relation of corresponding this region electricdomain movement velocity and coercive electric field;
(7), according to step (2), change ferroelectric condenser charging stored charge surface density
qvalue, other electricdomain region is tried to achieve in repeating step (4) and (5) from the time dependent curve of electricdomain Switching Currents
i sw -
v c relation.
Described in above method, coercive electric field equals coercive voltage divided by ferroelectric thin film thickness.
The advantage of the measuring method of ferroelectric film electric domain regional movement speed of the present invention and coercive electric field relation is: this invention can overcome the complicacy of ferroelectric film electric domain nucleation in zones of different and the limitation of diversity and existing Correlative measurement method, ferroelectric film electric domain regional movement speed and coercive electric field relation that various situations and measuring accuracy are high can be adapted to, thereby dynamics of domain movement mechanism and range of influence coercive voltage size in film zones of different can be understood in depth.
Brief description of the drawings
Piezoelectric forces microscope (PFM) figure of Fig. 1 ferroelectric thin film (a)+10V and (b)-4V under different polarizing voltages shows that ferroelectric domain reversion occurs in simultaneously
i,
j,
k, and
lnear different defect points.
Fig. 2 is at different applying under voltage, Ferroelectric Thin-film Switching Currents temporal evolution relation curve, wherein R
t=1k Ω.
Fig. 3 in Switching Currents temporal evolution graph of relation, by step (5) ferroelectric thin film region electricdomain coercive voltage high precision in summary of the invention 1 read the m electricdomain region that method obtains (
qvalue is determined) electricdomain
i sw (t m -)with
vvariation.
Fig. 4 reads method by step (5) ferroelectric thin film region electricdomain coercive voltage high precision in content 1 and draws m electricdomain region coercive voltage
v c (t m ).
Fig. 5 changes in circuit between 100 Ω-1M Ω
r t value and change ferroelectric condenser charging stored charge surface density
qvalue, draws zones of different
i sw -V c relation, be finally converted into the current density of electricdomain motion and the relation of coercive electric field inverse (
j sw -1/E c ).
Embodiment
Below more specifically describe the present invention in conjunction with being shown in reference example, the invention provides preferred embodiment, but should not be considered to only limit to embodiment set forth herein.
Fig. 1 is piezoelectric forces microscope (PFM) figure of ferroelectric thin film (a)+10 V and (b)-4 V under different polarizing voltages, shows that domain reversal occurs in
i,
j,
k, and
lnear different defect points.Chief proof ferroelectric thin film coercive voltage is with the physical theory of film regional distribution change.
It is all with Agilent 81150A arbitrary waveform signal generator letter editor that the embodiment of the present invention is tested required pulse signal, and electric current is by LCWR 6200A oscillograph recording, 1000 ohm of the total resistance in seriess of system.Produced by 1V step-length successively from 15V to 8V and the width forward series level pulse that is 1ms by signal generator, by the electricdomain Switching Currents of each level pulse of oscillograph recording ferroelectric thin film in test circuit system over time
i sw (t)(as shown in Figure 2).
Read and be divided into common reading with high precision and read two parts explanations by ferroelectric thin film region electricdomain coercive voltage below:
The common method that reads of ferroelectric thin film region electricdomain coercive voltage:
Switching Currents in Fig. 2 under 12V impressed voltage over time, be presented at ferroelectric condenser charging process, on ferroelectric thin film, voltage is gradually from above freezing while being raised to target voltage, can see that according to formula (3) larger reverse current is corresponding to less coercive voltage domain reversal (as m electricdomain), and by (m electricdomain has a chain-wales within a certain period of time) after this domain reversal, along with the progressively increase of film charging voltage, the electricdomain that coercive voltage is higher reverse successively (n electricdomain and have a platform within the longer time).The reversing time of n electricdomain is longer also illustrates that n electricdomain region is larger.
According to description step (2), the charge density value of determining ferroelectric thin film m region electricdomain is 10.7 μ C/cm
2, and Switching Currents under the 12V of Fig. 3 impressed voltage is in time in curve, the time point of finding out is now
t m (615.3ns) with corresponding reverse current
i sw (t m )(6.22mA).Can calculate ferroelectric thin film m electricdomain region coercive voltage by formula (3)
v c (t m )for 5.78V.The impacts of uncertain factor on region coercive voltage such as the method has been ignored film contact resistance, current noise fluctuating.
Ferroelectric thin film region electricdomain coercive voltage high precision reads method:
Produce by 1V step-length successively different impressed voltages from 15V to 8V by signal generator, repeat that ferroelectric thin film region electricdomain coercive voltage is common reads ferroelectric thin film m electricdomain region reverse current and time point extraction method in method, extracting respectively 15V to 8V impressed voltage, is 10.7 μ C/cm in the charge density value of m region electricdomain
2under reverse current value, and draw in Fig. 4
i sw (t m )-
vrelational expression, carries out Function Fitting by formula (3), draws ferroelectric thin film m electricdomain region coercive voltage
v c (t m )for 5.2529V.This matching read uncertain factors pair such as can getting rid of film contact resistance
v c (t m )the impact of measured value.
A ferroelectric condenser charging stored charge surface density
qunder, between 100 Ω-1M Ω, change in circuit
r t value, repeats the above-mentioned ferroelectric thin film region electricdomain coercive voltage method that reads, and can be the corresponding measurement in order of magnitude ground this region electricdomain
i sw -
v c relation, the i.e. relation of corresponding this region electricdomain movement velocity and coercive electric field.
Change ferroelectric condenser charging stored charge surface density
qvalue (10.7,12.8,17.6,40.8,53.3,69.9 μ C/cm
2), repeat to try to achieve different electricdomains region by the above-mentioned ferroelectric thin film region electricdomain coercive voltage method of reading
i sw -
v c relation.Can obtain the relation (as shown in Figure 5) of zones of different electricdomain movement velocity and coercive electric field.Carry out linear fit according to ferroelectric theory, different slope of a curves have reflected the difference of zones of different domain reversal activation energy barrier height, but their extended lines finally all meet at a bit, indicate that electricdomain motion exists a limiting velocity, and corresponding the limiting current of an electricdomain motion, it does not change with the region of film.
Claims (2)
1. the measuring method of a ferroelectric film electric domain regional movement speed and coercive electric field relation, it is characterized in that adopting electric pulse mensuration, under the effect of applying pulse voltage, ferroelectric condenser increases gradually at the voltage of charging stage, electricdomain is reversed in time successively according to coercive voltage order from small to large, and, only after the domain reversal in lower coercive voltage region completes, in higher coercive voltage region, electricdomain just starts reversion, and speed reversal and electric current are proportional; Under applying pulse voltage between 0.1V-100V, regulate between 100 Ω-100M Ω by resistance in total series circuit, can between 1nA-1A, change domain reversal electric current or electricdomain movement velocity, measure electricdomain Switching Currents and reflect over time the coercive electric field of ferroelectric thin film zones of different with the variation of electricdomain movement velocity, concrete measuring process is as follows:
(1), ferroelectric thin film is applied to pulse voltage
v, at impressed voltage
vwith a total resistance in series
r t under effect, ferroelectric thin film coercive voltage temporal evolution is:
V c 0(
t 0）<
V c 1(
t 1)<
V c 2(
t 2)<
V c 3(
t 3)…<
V c m(
t m) (1)
Wherein
v c 0the coercive voltage that is the 0th region electricdomain exists
t 0moment starts reversion,
v c 1(
t 1) be that the coercive voltage of the 1st region electricdomain exists
t 1moment starts reversion; By that analogy,
v c m(
t m) be that the coercive voltage of m region electricdomain exists
t mmoment starts reversion; The time sequencing of domain reversal is
t 0<
t 1<
t 2<
t 3<
t m;
(2), according to step (1), have formula:
Wherein
q (t m )for the measured total electrical charge surface density that starts reversion to m electricdomain of ferroelectric condenser,
c f (V)for the electric capacity of ferroelectric condenser,
v c m be the coercive voltage of m region electricdomain,
sfor the electrode area of ferroelectric parallel plate capacitor, △
p i(
v c i) at the changing value of the caused polarization intensity of i region domain reversal;
q(
t m ) do not change with the change of total series impedance in circuit;
(3), according to step (1), ferroelectric thin film m region domain reversal electric current and coercive voltage close and are:
Wherein
i sw (
t m ) be the Switching Currents of m region electricdomain,
vfor impressed voltage,
v c (t
m) be the coercive voltage of m region electricdomain,
r t for total resistance in series in circuit;
i sw (
t) pass through oscilloscope measurement
r t the voltage at two ends is obtained over time;
(4), according to step (3) measurement data, and equal charging current to time integral formula by capacitor charging stored charge:
(4)
Calculate ferroelectric condenser charging stored charge surface density
q (t m ), wherein
q (t m )for ferroelectric condenser charging stored charge surface density,
sfor ferroelectric condenser electrode area,
i sw (t)for time dependent Switching Currents;
(5), read ferroelectric thin film region electricdomain coercive voltage, be divided into two kinds of common and high precision and read:
Common the reading of ferroelectric thin film region electricdomain coercive voltage:
1. according to step (2), determine that ferroelectric condenser ferroelectric thin film m electricdomain starts the total electrical charge surface density of reversion
q(
t m );
2. obtain ferroelectric condenser ferroelectric thin film m electricdomain according to step (4) and start the total electrical charge surface density of reversing
q(
t m ) corresponding
t m moment and
i sw (
t m );
3. calculated by step (3) formula
v c (
t m );
Ferroelectric thin film region electricdomain coercive voltage high precision reads:
1. at an impressed voltage
vunder
,according to step (2), determine that ferroelectric condenser ferroelectric thin film m electricdomain starts the total electrical charge surface density of reversion
q(
t m );
2. according to step (4), obtain ferroelectric condenser ferroelectric thin film m electricdomain and start the total electrical charge surface density of reversing
q (t m )corresponding
t m moment and
i sw (
t m );
3. according to impressed voltage
vvalue, 0.6
v-2
vscope, change impressed voltage fluctuates
v, and repeat 1. above-mentioned and 2. two pacing amounts, draw
i sw (
t m )-
vrelational expression, carries out Function Fitting by step (3) formula, draws
v c (
t m );
(6), under applying pulse voltage between 0.1V-100V, by resistance in total series circuit
r t value regulates between 100 Ω-100M Ω, and repeating step (1) is to (5), can be between 1nA-1A corresponding measurement m region electricdomain
i sw -
v c relation, the i.e. relation of corresponding this region electricdomain movement velocity and coercive electric field;
(7), according to step (2), change ferroelectric condenser charging stored charge surface density
qvalue, repeating step (4) is to (6), tries to achieve other electricdomain region from the time dependent curve of electricdomain Switching Currents
i sw -
v c relation.
2. measuring method according to claim 1, is characterized in that the described coercive electric field of step (7) equals coercive voltage divided by ferroelectric thin film thickness.
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| CN103412210B (en) * | 2013-07-19 | 2017-12-29 | 复旦大学 | A kind of measuring method of nucleation reversible electric domain polarization intensity of ferroelectric film |
| CN104880577B (en) * | 2015-05-22 | 2018-09-14 | 重庆科技学院 | The device and method of home position observation ferroelectric material domain structure before and after electric field action |
| CN112186097B (en) * | 2019-07-01 | 2023-10-27 | 上海磁宇信息科技有限公司 | Structure for optimizing writing performance of magnetic random access memory and preparation method thereof |
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