CN102576059B - Mri安全植入电子装置 - Google Patents

Mri安全植入电子装置 Download PDF

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CN102576059B
CN102576059B CN201080036894.XA CN201080036894A CN102576059B CN 102576059 B CN102576059 B CN 102576059B CN 201080036894 A CN201080036894 A CN 201080036894A CN 102576059 B CN102576059 B CN 102576059B
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马丁·西默林
约瑟夫·保珈特纳尔
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Abstract

本发明描述了一种用于可植入电子***的电源布置。MRI电源布置与可植入电源电路协作以在磁共振成像(MRI)过程中为植入电路提供高输出阻抗。

Description

MRI安全植入电子装置
本申请要求2009年8月20日提交的美国临时专利申请61/235,386的优先权，在此并入其全部内容作为参考。
技术领域
本发明涉及可植入医疗装置，具体地，涉及提高这些装置与磁共振成像(MRI)一起使用时的安全性。
背景技术
广泛应用的磁共振成像(MRI)技术对于具有诸如耳蜗植入***的可植入电子装置的患者，可能对患者和/或植入装置两者造成各种风险。例如，在具有细长电极的植入装置中，与感应RF脉冲和转换梯度场的相互作用会导致在电极触点处产生MRI感应加热，这对于诸如心脏起搏器、脊髓刺激器以及深脑刺激器中的较长的植入电极来说特别危险。对于耳蜗植入装置来说，这些潜在危险可能较低，因为其电极相对短。MRI感应电流还可导致目标神经组织的无意识刺激。在最好的情况下，这仅会使患者略微不适(例如具有耳蜗植入装置的患者会在MRI过程中产生无意识听觉)。在最坏的情况下，这种无意识刺激可能会产生潜在危险(例如对具有深脑刺激器的患者而言)。MRI感应效应的强度取决于多种因素，诸如电极长度、电极触点尺寸、MRI设备以及MRI的使用顺序。电极电路的阻抗、电感和电容以及刺激器外壳也对这些效应的强度产生重要影响。
电极电路中的阻抗是电极阻抗、布线阻抗以及通常由CMOS开关和晶体管构成的电子输出电路的阻抗之和。这些半导体的阻抗在植入装置没有电源时相对不确定，诸如当外部电源部件在执行MRI之前因安全原因而被移除时。没有电源，这些半导体通常起到二极管的作用，从而整流由电极电路拾取的信号，诸如在MRI过程中的RF信号脉冲。这些寄生信号(1.5特的回旋频率(larmor frequency)，MR扫描器是63.9MHz)仅由二极管的电容限制，而该电容通常约为10pF的数量级。
当前，与MRI有关的电极和细长植入结构的加热可通过禁止对具有这些植入装置的患者使用MRI来避免。这可以是完全禁止MRI或仅允许使用低场MRI和/或低SAR值的部分限制。替代地或另外地，电极线圈可用于提高与MRI有关的安全性。
发明内容
本发明的实施例涉及用于诸如耳蜗植入***的可植入电子***的电源布置。MRI电源布置与可植入电源电路协作，从而在磁共振成像(MRI)过程中为植入电路提供高输出阻抗。
在另外的特定实施例中，MRI电源布置可包括耦合至可植入电源电路的可植入MRI电源电路，其用于在MRI过程中将电源电压提供给植入电路。
在其他特定实施例中，MRI电源布置可包括耦合至可植入电源电路的外部MRI电源电路，其用于在MRI过程中将电源电压提供给植入电路。外部MRI电源电路可以是电池供电或由MRI过程中产生的RF脉冲供电。还可具有可拆卸外部保持磁铁，用于与相应的植入磁铁协作，从而相对于可植入电源电路建立外部MRI电源电路的校正位置。
附图说明
图1示出根据一个实施例的可植入MRI电源电路的部件，其耦合至可植入电源电路，用于在MRI过程中将电源电压提供给植入电路。
图2示出由MRI过程中产生的RF脉冲供电的外部MRI电源电路的一个实施例。
图3示出由电池供电的外部MRI电源电路的一个实施例。
图4示出具有可拆卸的磁铁和头带的外部MRI电源的一个实施例。
具体实施方式
本发明的实施例涉及用于诸如耳蜗植入***的可植入电子***的电源布置。MRI电源布置与可植入电源电路协作以在磁共振成像(MRI)过程中为植入电路提供高输出阻抗。更具体地，利用在MRI过程中存在的时不变磁场产生用于植入电子电路的足够的电源，以便半导体输出在MRI过程中处于良好设定的高阻抗状态。这致使可植入***在RF感应电极加热和电流方面具有改善的MRI安全性。
许多有源可植入医疗装置(AIMD)是部分或全部可植入的，且它们包括通过皮肤传递电信号的可植入线圈，其将电能提供至一个或多个植入电子电路(且其通常还包括与本讨论无关的数据部件)。
图1示出一种方法，其基于耦合至主植入电源电路的可植入MRI电源布置，该主植入电源电路在MRI过程中不需要外部线圈来将电能提供给植入装置。一般来说，外部产生的RF电信号由植入接收线圈L101接收，其与并联的电容C101构成谐振电路。肖特基二极管D101整流L101/C101谐振电路中存在的RF信号以放大主植入电源电压，该主植入电源电压由输出电容C102滤波。齐纳二极管D102提供过压保护。为该主电源电路加入一种新的可植入MRI电源电路，其中MRI的电感L102具有宽带电感耦合特性，以从MR扫描器场的宽范围内感测RF脉冲。MRI整流二极管D103放大接收的脉冲以在MRI过程中产生植入电源电压，该植入电源电压足够高以使植入电路的半导体输出在MRI过程中进入良好限定的高阻抗状态。
虽然基于可植入MRI电源电路的实施例对于新的植入***是有用的，但当前仍然有许多已经使用的已有植入***，其中并未置入这种保护电路。对于上述已有***来说，可使用外部MRI电源。图2示出在MRI过程中使用的外部MRI电源电路的一个实施例，该外部MRI电源电路放置在植入电路之上的皮肤上且将RF脉冲的能量转换成通过皮肤传递的信号，且该信号适于在植入装置中产生足够高的电源电压。由MRI过程中产生的RF脉冲供电的布置如下：MRI电感L201从MRI扫描器场感测RF脉冲，且MRI二极管D201整流该脉冲以产生用于从外部发射器电路通过皮肤感应传输至植入接收器线圈的外部电信号。齐纳二极管D202提供过压保护。该MRI信号由植入电路放大以在MRI过程中产生植入电源电压，该电源电压足够高以使植入电路的半导体输出在MRI过程中进入良好限定的高阻抗状态。
图3示出在MRI过程中使用的另一外部MRI电源电路的实施例，其是电池供电的并包括放置在植入电路之上的皮肤上的外部线圈。外部电池供电的线圈产生通过皮肤传递的信号，且该信号适于在植入装置中产生足够高的电源电压，以使植入电路的半导体输出在MRI过程中进入良好限定的高阻抗状态。
图4示出在MRI过程中使用的如图2或图3中的外部MRI发射线圈401的一个实施例，其还包括可拆卸外部保持磁铁402以及头带403。在MRI进行之前，这种附接有可拆卸外部保持磁铁402的外部发射线圈401将放置在植入接收线圈之上，从而与相应的植入磁铁协作以相对于可植入电源电路建立外部MRI发射线圈401的校正位置。头带403随后围绕头部附接以在校正位置上固定外部MRI发射线圈401，此后，可以卸下可拆卸外部保持磁铁402，且可以执行MRI。
用于MRI电源电压而感应地传递至植入装置的MRI电能信号可以任意若干不同方式产生。例如，特定实施例可以基于频率转换器(例如分频器或倍频器)的使用。替代地或另外地，外部宽带接收器可用于将MRI RF信号转换成DC电压(例如通过整流和低通滤波)，该DC电压可用于驱动在感应链路的频率下运行的振荡器。
虽然已经公开的本发明的各种示例性实施例，但对于本领域技术人员来说显而易见的是在不脱离本发明的真正范围的情况下可对本发明进行各种改变和修改，从而实现本发明的某些优点。

Claims (4)

1.一种用于可植入电子***的电源布置，包括： 
在磁共振成像MRI过程中为植入电路以高输出阻抗提供电源电压的可植入磁共振成像MRI电源布置，所述磁共振成像MRI电源布置包括： 
i.磁共振成像MRI电感(L102)，具有宽带电感耦合特性，以从MR扫描器场的宽范围内感测RF脉冲，以及 
ii.磁共振成像MRI整流二极管(D103)，放大接收的RF脉冲，以在磁共振成像MRI过程中产生植入电源电压；并且 
主植入电源布置，与所述可植入磁共振成像MRI电源布置配合，以在不在磁共振成像MRI过程中的正常操作过程中为所述植入电路提供电源电压，所述主植入电源包括： 
i.植入接收线圈(L101)，其与并联的电容(C101)构成谐振电路，以及 
i.肖特基二极管(D101)，其整流所述谐振电路(L101/C101)中存在的RF信号，以放大主植入电源电压。 
2.根据权利要求1所述的电源布置，其中所述植入电路用于耳蜗植入***。 
3.一种为可植入电子***提供电能的方法，该方法包括： 
从可植入磁共振成像MRI电源布置在磁共振成像MRI过程中为植入电路以高输出阻抗提供电源电压，所述可植入磁共振成像MRI电源布置包括： 
i.磁共振成像MRI电感(L102)，具有宽带电感耦合特性，以从MR扫描器场的宽范围内感测RF脉冲，以及 
ii.磁共振成像MRI整流二极管(D103)，放大接收的RF脉冲，以在磁共振成像MRI过程中产生植入电源电压；并且 
从与所述可植入磁共振成像MRI电源布置配合的主植入电源布置 在不在磁共振成像MRI过程中的正常操作过程中为所述植入电路提供电源电压，所述主植入电源包括： 
i.植入接收线圈(L101)，其与并联的电容(C101)构成谐振电路，以及 
i.肖特基二极管(D101)，其整流所述谐振电路(L101/C101)中存在的RF信号，以放大主植入电源电压。 
4.根据权利要求3所述的方法，其中所述植入电路用于耳蜗植入***。 
CN201080036894.XA 2009-08-20 2010-08-17 Mri安全植入电子装置 Active CN102576059B (zh)

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