CN102572319B - Image device and camera arrangement - Google Patents
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- CN102572319B CN102572319B CN201110287493.8A CN201110287493A CN102572319B CN 102572319 B CN102572319 B CN 102572319B CN 201110287493 A CN201110287493 A CN 201110287493A CN 102572319 B CN102572319 B CN 102572319B
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Abstract
The present invention relates to image device and camera arrangement.This image device includes: pixel array unit, and it is used as light receiver, is provided with multiple pixels with electrooptical device in pixel array unit in the form of an array, when photon incidence, and the pixel output signal of telecommunication；Sensing circuit portion, is wherein arranged with multiple sensing circuit, and sensing circuit receives from the signal of telecommunication of pixel and performs to judge about the binary whether having photon to incide in pixel in predetermined period；And judged result integrating circuit portion, it has following function, i.e. multiple judged results of sensing circuit are integrated for each pixel or for each pixel group, wherein, judged result integrating circuit portion execution photon counting is to be integrated the multiple judged results in multiple pixels, thus draws the photon numbers inciding on light receiver.The present invention even also carries out imaging or luminous intensity measurement with relatively low noise and with wide dynamic range under low illuminance.
Description
Cross reference to related applications
It is special that the application comprises the Japanese priority submitted to on October 1st, 2010 to Japan Office
The theme that profit application JP 2010-224235 disclosure of that is relevant, therefore by this Japanese priority
The full content of application is hereby incorporated herein by.
Technical field
The present invention relates to image device (such as CMOS (complementary metal oxide semiconductors (CMOS)) image
Sensor etc.) and camera arrangement.
Background technology
In recent years, in medicine or biological technical field, to the Weak-luminescence sent from health or glimmering
Light measures or imaging becomes to become increasingly active.
In medical treatment or security fields, having a kind of technology by industrialization, this technology passes through flasher
(scintillator) a small amount of X-ray being transmitted through health is converted into the photon of visible horizon right
These photons carry out detecting to perform transmission imaging (transmission imaging).It addition, doctor
Treating or in security fields, also have a kind of technology the most by industrialization, this technology will be by by flasher
Gamma-rays produced by a small amount of radiative material being injected in human body is converted into photon (such as single photon
Transmitting computerized tomography (Single Photon Emission Computed Tomography,
SPECT) or positron emission tomography art (Positron Emission Tomography,
PET))。
When carrying out imaging in this area, for minimal amount of light, use photon counter.
Generally, photon counter is a kind of use avalanche diode (avalanche diode) or photoelectricity
The single device of multiplier tube (photomultiplier tube).
The photon conversion incided on optical receiving surface is become photoelectron, utilization by this kind of photon counter
High voltage makes these photoelectrons accelerate and produces secondary electron by collision to make these photoelectrons times
Increase, thus produce potential pulse at output.
Pulse number is always measured by the counter device being connected to this device.
Although photon counter has high certainty of measurement, thus allows to enter in units of a photon
Row detection, but rather expensive and for measuring the dynamic range of this system is the narrowest.
Generally, measurable photon number of photon counter be 1 second about 1,000,000 to 1000
Ten thousand.
On the other hand, for carrying out imaging in the scope at relatively large amount of light to be measured, make
With photodiode and modulus (analog-to-digital, AD) transducer.
Photodiode accumulation is through the electrode charge of opto-electronic conversion, and exports analogue signal.AD conversion
This analogue signal is converted into digital signal by device.
Problem in this kind of imaging is the noise that caused of the transmission of analogue signal and a/d converter
Conversion speed.
For a small amount of light is detected, need to suppress noise and it also requires increase in AD conversion
Bits number to realize fine copped wave (chopping).But, for this reason, it may be necessary to have ultrahigh-speed
The a/d converter of degree.If it addition, make there is a large amount of pixel to improve resolution during imaging,
Then can significantly increase the system dimension for AD conversion.
Substantially, the optical detection that noise is low and precision is high and big dynamic range both are to few
Amount light carries out during imaging necessary.
But, there is no and meet the device that both requires.
For example, for reducing the light exposure in x-ray imaging, need to have to be equivalent to photon meter
The precision of number device level.But, in common photon counter, it is impossible to obtain be enough to be used in into
The dynamic range of row imaging.
It addition, for improving resolution, need that there is a large amount of pixel.But, in this kind of situation,
System including counter device is much more expensive.
On the other hand, Japanese documentation JP-A-1995-67043 proposes one use time division
The new Photoncounting methods of (time division).
Whether it is by performing about there being photon to incide on photodiode two in the fixed cycle
Value judge, and to by repeat this two-value judge repeatedly and the result obtained is integrated, come
Obtain two-dimensional imaging data.
It is to say, the signal from photodiode is sensed in each fixed cycle,
And if the number of the incident photon in this cycle is more than 1, the most no matter the number of incident photon is such as
What, all make the enumerator being connected to each pixel be incremented by 1.
If the frequency of photon incidence is arbitrary on a timeline, then the actual number that photon is incident
And the relation between count number follows Poisson distribution (Poisson distribution).Therefore, as
Really incident frequencies is low, then above-mentioned relation becomes the relation of approximately linear；And if incident frequencies is high,
Then can perform uniformity correction.
But, according to technology disclosed in Japanese documentation JP-A-1995-67043, due to
Sensing circuit and enumerator are necessary to each pixel, and therefore the aperture area of pixel is by greatly
Reduce.
Japanese documentation JP-A-2004-193675 proposes one configuration: divide taking the above-mentioned time
While cutting method of counting, enumerator is arranged at outside pel array.But, sensing circuit and storage
Device remains necessary to each pixel.
Even if enumerator is arranged at outside pel array, also to provide enumerator for each pixel.Cause
This, the circuit size of chip is inevitably increased.
Additionally, be in Japanese documentation JP-A-1995-67043 or JP-A-2004-193675
Disclosed configuration increases dynamic range during imaging, needs chopped light the most subtly
The sub incident measurement cycle also improves pixel access speed.
Summary of the invention
Accordingly, it is desired to provide a kind of image device and a kind of camera arrangement, to allow even to exist
Also imaging or luminous intensity measurement is carried out with relatively low noise and with wide dynamic range under low illuminance.
Embodiments of the invention relate to a kind of image device, and this image device includes: pixel array unit,
It is used as light receiver, is provided with in the form of an array and has opto-electronic conversion in described pixel array unit
Multiple pixels of device, when photon incidence, the described pixel output signal of telecommunication；Sensing circuit portion,
Wherein being arranged with multiple sensing circuit, described sensing circuit receives the described telecommunications from described pixel
Number and perform about whether have photon to incide in described pixel in predetermined period binary judge；
And judged result integrating circuit portion, it has following function, i.e. for each pixel described or pin
Multiple judged results of described sensing circuit are integrated by each pixel group.Described judgement knot
Really integrating circuit portion performs photon counting to enter the plurality of judged result in the plurality of pixel
Row integration, thus draw the photon numbers incided on described light receiver.
Another embodiment of the present invention relates to a kind of camera arrangement, and this camera arrangement includes: become
As device；Optical system, it is for forming subject image on image device；And signal processing
Circuit, it is for processing the output image signal of image device.Described image device includes: pixel
Array part, it is used as light receiver, is provided with in the form of an array and has in described pixel array unit
Multiple pixels of electrooptical device, when photon incidence, the described pixel output signal of telecommunication；Sensing
Circuit part, is wherein arranged with multiple sensing circuit, and described sensing circuit receives from described pixel
Whether the described signal of telecommunication also performs about there being photon to incide two in described pixel in predetermined period
Unit judges；And judged result integrating circuit portion, it has a following function, i.e. for described each
Pixel or multiple judged results of described sensing circuit are integrated for each pixel group.Institute
State judged result integrating circuit portion and perform photon counting so that the plurality of in the plurality of pixel to be sentenced
Disconnected result is integrated, thus draws the photon numbers incided on described light receiver.
According to embodiments of the invention, by under conditions of the aperture opening ratio not reducing pixel not
Need analogue signal again, it is possible to even also with relatively low noise and with wide dynamic model under low illuminance
Enclose and carry out imaging or luminous intensity measurement.
Accompanying drawing explanation
Fig. 1 is to show cmos image sensor (image device) according to a first embodiment of the present invention
The figure of configuration example；
Fig. 2 is the schematic diagram showing the light receiver in the present embodiment；
Fig. 3 is the unit grid (unit grid) of the grid (mesh) showing light receiver shown in Fig. 2
On average photon incidence number of times and average count number between the figure of relation；
Fig. 4 is the figure of the example of the circuit configuration showing pixel in the present embodiment；
Fig. 5 is the figure of the cyclic access for explaining the block of pixels in first embodiment；
Fig. 6 is the electricity that display has the example of the sensing circuit of self-reference function (self-reference)
Lu Tu；
Fig. 7 A to Fig. 7 F is the sequential chart of the example for explaining read operation, and this read operation is
The sensing circuit shown in Fig. 6 with self-reference function is used to hold in the example of pixel shown in Fig. 4
OK；
Fig. 8 is the figure for explaining the second embodiment of the present invention, is also to show corresponding to first in fact
Execute the figure of the block of pixels of the example configuration example when using internal scale-up version photodiode；
Fig. 9 A and Fig. 9 B is ought to be applied to computerized tomography by image device according to embodiments of the present invention
The schematic diagram of imaging device during inspection (Computer Tomography, CT) imaging；
Figure 10 is the figure of the example showing Linear Imaging Device, in this Linear Imaging Device, according to
The image device (light receiving element) of the embodiment of the present invention is aligned to one-dimensional rectilinear form；
Figure 11 is the radioprotective showing image device (light receiving element) according to embodiments of the present invention
The figure of protection example；
Figure 12 is that incident direction is estimated by display by detecting photon simultaneously
The schematic diagram of example；
Figure 13 is to show cmos image sensor (imager according to a fourth embodiment of the present invention
Part) the figure of configuration example；
Figure 14 is for explaining the photon detection that use is carried out according to the image device of the 4th embodiment
The figure of temporal resolution；
Figure 15 is to show cmos image sensor (imager according to a fifth embodiment of the present invention
Part) the figure of configuration example；
Figure 16 is for explaining the photon detection that use is carried out according to the image device of the 5th embodiment
The figure of temporal resolution；And
Figure 17 is joining of the camera arrangement of the solid imaging element showing the employing embodiment of the present invention
Put the figure of example.
Detailed description of the invention
Hereinafter, with reference to the accompanying drawings embodiments of the invention are illustrated.
It addition, will illustrate in the following order.
1. the feature general introduction of the image device of the embodiment of the present invention
2. first embodiment (the first exemplary configuration of image device)
3. the second embodiment (the second exemplary configuration of image device)
4. the 3rd embodiment (application example of image device)
5. the 4th embodiment (the 3rd exemplary configuration of image device)
6. the 5th embodiment (the 4th exemplary configuration of image device)
7. sixth embodiment (camera arrangement)
1. the feature general introduction of the image device of the embodiment of the present invention
In embodiments of the present invention, in high-speed parallel reading field, it is achieved that image device
The best allocation of (cmos image sensor) is used as using the digital image of photon counting to pass
Sensor.
First, each pixel output photon in specific period is incident as the signal of telecommunication.Sensing circuit
Within a frame period, receive described result repeatedly, and perform judgement according to bi-values.Imager
Part such as produces gradation data (gray-scale data) by being integrated each pixel.
Image device according to embodiments of the present invention has following characteristics based on this kind of basic configuration.
Time division photon counting makes without by photon detection process being become in fixed cycles
The pulse produced by the photon incidence in system is monitored in repeatability detection continuously.
It is conceived to this, in embodiments of the present invention, first, does not use each of which pixel to be respectively provided with
Individually sensing circuit and the configuration of single enumerator, but by hierarchical arrangement these three assembly.
It is to say, in embodiments of the present invention, in the case of using time division photon counting,
Multiple pixels share a sensing circuit or a counting circuit shared by multiple sensing circuit.
In embodiments of the present invention, for example, read shared sensing circuit in a looping fashion many
Individual pixel, and from once read and perform exposure to the current cycle read.Therefore, on
State and share and time of exposure will not be adversely affected.
It addition, process performing the counting to judged result and be used for storing data into memorizer
On process while, also can start next exposure.Therefore, although needed for carrying out counting process
Time can share enumerator and elongated due to multiple sensing circuits, but time of exposure is not made by this
Become adverse effect.
It addition, in embodiments of the present invention, by the count results of multiple pixels is carried out phase Calais
Expand the dynamic range of photon counting.
By the result of different pixels is stored at the same address of memorizer, can be easily
Perform the addition sharing between each pixel of enumerator.
It addition, be set by all count results of light receiver being added and drawing incident illumination total amount
Function.Such as, this can by extra adder is set near data output section and easily
Realize.
It addition, by using straight line or array format provide this kind of light receiving element as unit pixel,
Just minimal amount of light can be detected and perform imaging with wide dynamic range.
According to the embodiment of the present invention of the above-mentioned configuration of employing, can significantly reduce and carry out photon counting institute
The circuit size needed.Therefore, by semiconductor imaging device is used miniaturization technology, can perform
Use the high-performance optical sub-count of multiple pixel.
The dynamic range of photon counting is to utilize the Multiple Segmentation (multi-division) on time orientation
With the Multiple Segmentation of incidence surface and determined by the total number of grid, and each grid is respectively provided with two
Unit's value.
The resolution of grid and the dynamic range of count number are with the miniaturization technology in semiconductor manufacturing
Development increase with the raising of speed.
Although the detection of accurate light intensity just can be realized according to the present embodiment merely with an image device
Or imaging accurately, but by the multiple image devices according to the present embodiment are connect as unit light
Receive device and be arranged in array, accurate imaging can be realized with broader dynamic range.
Owing to each light receiving element is respectively provided with tally function, thus can easily build this kind of system
And without using expensive external devices.
Further, since each light receiving element is performed both by directly related with incident photon number itself
Digital counting, thus in typical simulation image device between viewed light receiving element
Change of sensitivity there's almost no.That is, it is not necessary to carry out the sensitivity between light receiving element
Adjust.
For example, if according to the image device of the present embodiment be used for utilizing a small amount of X-ray to enter
The flasher of row transmission imaging is used together, then exposure that can be low performs high accuracy and high-resolution
The imaging of rate, and the cost of system is the lowest.
Hereinafter, will be explained in as characterized above as the imager according to the present embodiment
The cmos image sensor of part.
2. first embodiment
Fig. 1 is to show cmos image sensor (image device) according to a first embodiment of the present invention
The figure of configuration example.
The general introduction of overall arrangement
Cmos image sensor 100 includes pixel array unit 110, sensing circuit portion 120, output
Signal line group 130, transmission line group 140 and judged result integrating circuit portion 150.
In cmos image sensor 100, as mentioned below, multiple pixels share a sensing
Circuit.
Corresponding, cmos image sensor 100 includes block of pixels 160-0 to 160-3...,
It is multiple that each block of pixels in block of pixels 160-0 to 160-3... all includes being positioned on same string
Pixel DPX and include selection circuit.
It addition, cmos image sensor 100 includes that row controls circuit group 180 and row cutting
Circuit 170, horizontal drive circuit 170 is for driving pixel DPX of pixel array unit 110, to incite somebody to action
The signal of telecommunication of pixel DPX exports to output signal circuit 131.
In pixel array unit 110, multiple digital pixel DPX in the row direction and are arranged on column direction
Arrange into matrix.
Each digital pixel DPX is respectively provided with electrooptical device, and has for when photon incidence
The function of the output signal of telecommunication.
Additionally, as it has been described above, each block of pixels in block of pixels 160-0 to 160-3... is all
Formed by selection circuit and with the plurality of pixel DPX on string.
Cmos image sensor 100 has circuit blocks 200, and circuit blocks 200 is such as passed through
Judge the bi-values of the signal of telecommunication, the pin transmitted in the fixed cycle via output signal circuit 131
Judged result carried out repeatedly by each pixel integration and the count results of multiple pixels is added, coming
Produce and have gradational two-dimensional imaging data.
Cmos image sensor 100 for multiple pixels (in the present embodiment, for pixel
Multiple pixels that block 160-0 to 160-3... is unit) judged result obtained is carried out repeatedly
Integration, thus draw the photon numbers incided in pixel array unit 110 (it is light receiver).
Cmos image sensor 100 has by the addition of the count results of multiple pixels being expanded
The function of the dynamic range of photon counting.
Pixel array unit 110, sensing circuit portion 120 and judged result integrating circuit portion 150 set
It is placed in circuit blocks 200.
In sensing circuit portion 120, sensing circuit 121-0,121-1,121-2,121-3... are respectively
Block of pixels 160-0 to 160-3... corresponding to pixel array unit 110 arranges.
The input of sensing circuit 121-0 is connected to output signal circuit 131-0, forms block of pixels
All pixels DPX-00 of 160-0, the outfan of DPX-10... and DPX-p0 the most jointly connect
It is connected to output signal circuit 131-0.
It is to say, the plurality of pixel DPX-00 to DPX-p0 shares one sensing circuit
121-0。
It addition, the number of pixels in each block of pixels 160 (160-0 to 160-3) is set as
Such as 128.In this kind of situation, p is 0 to 127, and block of pixels 160-0 includes pixel
DPX-00 to DPX1270.
The input of sensing circuit 121-1 is connected to output signal circuit 131-1, forms block of pixels
All pixels DPX-01 of 160-1, the outfan of DPX-11... and DPX-p1 the most jointly connect
It is connected to output signal circuit 131-1.
It is to say, the plurality of pixel DPX-01 to DPX-p1 shares one sensing circuit
121-1。
Block of pixels 160-1 includes such as 128 pixel DPX-01 to DPX1271.
The input of sensing circuit 121-2 is connected to output signal circuit 131-2, forms block of pixels
All pixels DPX-02 of 160-2, the outfan of DPX-12... and DPX-p2 the most jointly connect
It is connected to output signal circuit 131-2.
It is to say, the plurality of pixel DPX-02 to DPX-p2 shares one sensing circuit
121-2。
Block of pixels 160-2 includes such as 128 pixel DPX-02 to DPX1272.
The input of sensing circuit 121-3 is connected to output signal circuit 131-3, forms block of pixels
All pixels DPX-03 of 160-3, the outfan of DPX-13... and DPX-p3 the most jointly connect
It is connected to output signal circuit 131-3.
It is to say, the plurality of pixel DPX-03 to DPX-p3 shares one sensing circuit
121-3。
Block of pixels 160-3 includes such as 128 pixel DPX-03 to DPX1273.
In sensing circuit portion 120, for other block of pixels (not shown), sensing circuit
It is also arranged in sharing for multiple pixels.
Judged result integrating circuit portion 150 has following function: such as by for each pixel pair
The judged result of sensing circuit 121-0 to 121-3 carries out repeatedly integration the meter by the plurality of pixel
Number results added, produces the gradational two-dimensional imaging data of tool.
Judged result integrating circuit portion 150 has following function: for multiple pixels (in this enforcement
In example, the multiple pixels in units of block of pixels 160-0 to 160-3...) to obtained
Judged result carries out repeatedly integration, thus draws and incide pixel array unit 110 (it is light receiver)
On photon numbers.
Judged result integrating circuit portion 150 have depositor 151-0 to 151-3, selection circuit 152,
Counting circuit 153 and memorizer 154.
Depositor 151-0 to 151-3 is for keeping the judgement of corresponding sensing circuit 121-0 to 121-3
Value, these judgment value are to transmit via transmission line 141-0 to 141-3.
Selection circuit 152 sequentially output to depositor 151-0 to 151-3 selects, with will
The judgment value being held in corresponding registers 151-0 to 151-3 provides to counting circuit 153.
The judgment value of multiple pixels (in this example, being 4 pixels) is held by counting circuit 153
Row counting processes, and the count results of each pixel is stored in memorizer 154, and these judge
Value is to be selected by row and selected by selection circuit 152 after being read.
Then, the count results of multiple pixels is added by counting circuit 153, and addition results is deposited
It is stored in memorizer 154.
By upper once read time pixel data be loaded into counting circuit 153 from memorizer 154.
In the first embodiment, it is judged that result integrating circuit portion 150 includes a counting circuit 153,
And the plurality of depositor 151-0 to 151-3 shares counting circuit 153.
In other words, the plurality of sense is made according to the cmos image sensor 100 of first embodiment
Slowdown monitoring circuit 121-0 to 121-3 shares counting circuit 153.
Cmos image sensor 100 according to the present embodiment is configured to as characterized above joining
Put.
It is to say, cmos image sensor 100 is configured to make multiple pixel share sensing electricity
Road is to be circulated access so that time of exposure can be ensured and can meet little pixel.
Further, since counting circuit shared by multiple sensing circuits, thus can with optimal circuit size and
Processing speed forms cmos image sensor 100.
Cmos image sensor 100 has by the addition of the count results of multiple pixels being expanded
The function of the dynamic range of photon counting.
Herein, by with reference to Fig. 2 and Fig. 3 light-receiving to light receiver 300 and the base of photon counting
Present principles illustrates, and light receiver 300 is by the cmos image sensor according to the present embodiment
Pixel array unit 110 in the circuit blocks 200 of 100 is formed.
Fig. 2 is the schematic diagram showing the light receiver 300 in the present embodiment.
Fig. 3 is that the average photon on the unit grid of the grid showing light receiver shown in Fig. 2 is incident
The figure of the relation between number of times and average count number.
It addition, in fig. 2, for simplicity's sake, original two-dimentional light-receiving is represented in a one-dimensional fashion
Surface.
By utilizing the optical receiving surface 310 divided with equidistance and being drawn with equidistance
The time shaft t (representing the most in two dimensions) divided forms three-dimensional lattice in light receiver 300
Net MSH, performs photon counting.
Each grid MSH is respectively provided with bi-values.It is to say, sensing circuit portion 120 judges whether
One or more photon is had to incide in each grid MSH.In this kind of situation, such as, if
There is incidence, then regardless of the number of incident photon, be all judged as " 1 "；If there is no entering
Penetrate, be then judged as " 0 ".In fig. 2, the grid block corresponding to " 1 " is shown with thick frame.
It addition, reference IVT in Fig. 2 represents photon incidence event.
It addition, the total number of " 1 " is counted by judged result integrating circuit portion 150, then by
It is stored in memorizer 154.
Here, it is assumed that photon is that ground suitably homogenous relative to time shaft t is incident while fluctuation,
And be also that suitably homogenous ground is incident in surface direction, then grand total number and actual incident illumination
Relation between subnumber mesh follows Poisson distribution (Poisson distribution).
Fig. 3 is to show the average photon incidence number of times on the unit grid CL of grid and average counter
The figure of the relation between number.
As it is shown on figure 3, in the faint light region that average incident number of times is less than 0.1 time, incident
Number of times is substantially equal to count number.
If it addition, average incident number of times is less than 0.4 time, then incident number of times and count number it
Between the relation that relation is approximately linear.
If it is to say, the total number of the grid of grid MSH is sufficiently more than the number of incident photon
Mesh, then count value reflects the number of incident photon linearly, therefore can realize point-device counting.
It addition, by reducing mesh spacing in surface direction or on time shaft t to increase grid
Total number, the precision of counting can be improved and expand dynamic range simultaneously.
It is to say, by using high speed circuit technology and miniaturization technology in semiconductor fabrication,
The precision of photon survey can be improved in light receiver 300 and be significantly expanded dynamic range.
It addition, when the light in surface direction is incident on largely by local bias and incident illumination
Light quantity relatively large time, below configuration be effective.
By surface direction grid partition is become multiple formed by more than one grid block group,
Calculate the average count number of grid CL for each group and perform according to Poisson distribution
Correction, can improve certainty of measurement.
Alternatively, by arranging low-pass optical filtering before optical receiving surface 310
Device, also can alleviate incident photon deviation in surface direction effectively.Additionally, using flicker
Device carries out in the situation of X-ray detection, owing to when X-ray incidence, just sending from flasher
And scatter, thus flasher itself is i.e. used as optical low-pass filter. simultaneously.
The function relevant to digital pixel
Herein, the example of the configuration to digital pixel DPX is illustrated.
As it has been described above, digital pixel (hereinafter will be called pixel for short) DPX has photoelectricity and turns
Parallel operation part, and the signal of telecommunication is exported when photon incidence.
Owing to the cmos image sensor 100 as image device has for pixel DPX
Reset function and read functions, thus can perform at any time to reset and read.
Reset and refer to be reset to pixel DPX there is not the state that photon is incident.Preferably, each
Pixel DPX includes lens the most on the light receiving surface, or the most also can wrap on the light receiving surface
Include color filter.
Although this kind of basic function of pixel is close to the basic function of generic pixel, but for defeated
The precision as analogue value form or the linearity is need not for going out.
Herein, the example of the configuration to digital pixel is illustrated.
Fig. 4 is the figure of the example of the circuit configuration showing pixel in the present embodiment.
The example of Fig. 4 display pixel circuits, this image element circuit includes unit pixel DPX
Three transistors.
One unit pixel DPX includes photodiode 111, transmission transistor 112, answers
Bit transistor 113, amplification transistor 114, accumulation node 115 and floating diffusion (floating
Diffusion, FD) node 116.
The gate electrode of transmission transistor 112 is connected to be used as row and controls the transmission line 181 of circuit,
And the gate electrode of reset transistor 113 is connected to be used as row and controls the reset circuit 182 of circuit.
The gate electrode amplifying transistor 114 is connected to FD node 116, and amplifies transistor 114
Source electrode be connected to output signal circuit 131.
In pixel DPX, incide the light on the silicon substrate of pixel and produce electronics and hole pair, and
And photodiode 111 is by electron accumulation to accumulation node 115.
By connecting transmission transistor 112 with scheduled timing, these electronics are sent to FD node
116, thus the grid of drive amplification transistor 114.
Therefore, using signal charge as signal-obtaining to output signal circuit 131.
Output signal circuit 131 can via constant-current source or resistive device ground connection with realize source electrode with
Operate with device (source-follower), or can ground connection then there is floating type before reading
State, in order to export based on the charge level amplifying transistor 114.
Reset transistor 113 accumulates on by extracting when being simultaneously switched on transmission transistor 112
Electronics in photodiode 111, by the dark-state (dark state) before pixel-reset to accumulation
(the most there is not the state that photon is incident).
This kind of circuit or the operation mechanism of pixel are identical with the circuit of simulation pixel or operation mechanism, and
And various change can be similarly made with simulation pixel.
But, digital pixel is the incidence exporting a photon in a digital manner, simulates pixel then
Export total amount of incident of multiple photon in an analog fashion.
Therefore, digital pixel has different designs from simulation pixel.
First, in the situation of digital pixel, need the incident of a photon is produced enough
The big signal of telecommunication.
Such as, having in the image element circuit amplifying transistor shown in Fig. 4, preferably FD is saved
The parasitic capacitance of point 116 is set to the least, and FD node 116 is to form putting of source follower
The input node of big transistor 114.
In this kind of situation, it is also preferred that the amplitude of the incident output signal about a photon is protected
Hold the amplitude for being sufficiently above the random noise amplifying transistor 114.
On the other hand, it is different from simulation pixel, due to without considering in the output signal of pixel
The linearity, precision or opereating specification, thus such as can be to the input/output (I/O) of source follower
Power supply uses the low-voltage identical with the low-voltage for digital circuit.Furthermore it is preferred that by photoelectricity two
The stored charge capacity of pole pipe is set to the least.
Then, the integrated operation of the cmos image sensor 100 according to first embodiment will be entered
Row general introduction.
As it has been described above, block of pixels 160 (160-0 to 160-3...) includes 128 digital pixels
DPX and include selection circuit.Selection circuit select the one in these pixels perform reset or
Read.
In this example, the row according to being driven by horizontal drive circuit 170 controls circuit 181 and 182,
Select a pixel in block of pixels 160.
When being read out, photon whether will be had to incide in selected pixel and to export extremely as the signal of telecommunication
Output signal circuit 131 (131-0 to 131-3...), and by sensing circuit 121, (121-0 is extremely
121-3...) judge bi-values.
For example, sensing circuit 121 (121-0 to 121-3...) incides selected pixel at light
Time upper, " 1 " was judged as judgment value, and when light does not incides in selected pixel, " 0 " is judged
For judgment value, and latch this judgment value.
First the judgment value of sensing circuit 121 (121-0 to 121-3...) is sent to depositor 151
(151-0 to 151-3).
Described four block of pixels 160-0 to 160-3 share counting circuit 153, and by selecting
Circuit 152 and sequentially to by row select read four pixel perform counting process.
It addition, the count results of each pixel is stored in memorizer 154.
It is to say, pixel data when first being read the last time is loaded onto meter from memorizer 154
Number circuit 153.
In this kind of situation, counting circuit 153 is stored in depositor 151 in " 1 ", and (151-0 is extremely
Time in 151-3), count value is increased " 1 ", and be stored in depositor 151 (151-0 in " 0 "
To 151-3) in time count value is not updated.
Then, the value of counting circuit 153 is back to memorizer 154, then completes a picture
The counting of element processes.Sequentially four pixels are performed this process.
While performing this kind of counting process, block of pixels 160 (160-0 to 160-3) and sense
Slowdown monitoring circuit 121 (121-0 to 121-3) can be performed in parallel the reading to next line and judgement.
Such as, a frame period performs 1023 this kind of numerals and reads, think each pixel shape
Become the gradation data of 10.
In this kind of situation, counting circuit 153 is 10；And due to " 128 × 4 " individual pixel
In each pixel be respectively provided with the data of 10, thus memorizer 154 is 5120.
It is to say, cmos image sensor 100 is as the light carrying out arranging with unique configuration
Sub-count device runs.
Incidentally, the size of counting circuit 153 or memorizer 154 is different because of application.
For example, when forming the image-generating unit of " 4 pixel width × 4 pixel length ", each
The data of each pixel included in image-generating unit are stored in the same address of memorizer 154.
Then, it is added to count by the count value of the photon incided in these 16 pixels by memorizer
In circuit 153.
In this kind of situation, grand total number becomes 16 times, and 14 is counting circuit 153
Required.
On the other hand, the address number in memorizer 154 is set as 32/ (1/16), and each
Address all stores the value of 14.Therefore, desired volume is 448.
Alternatively, when only the total photon incidence number on whole optical receiving surface being entered
During row counting, owing to data are held in counting circuit 153, thus without providing memorizer.
In this kind of situation, counting corresponding 19 with the 10 of 512 pixels is enumerator
In figure place necessary to.
Alternatively, when according to application, function being become from the two-dimensional imaging of all pixels
When becoming to amount to, set 14 positions for counting circuit 153 and prepare 14 for " 128 × 4 " individual pixel
The memorizer 154 of position.It addition, be set meeting " 4 × 4 " to the level of circuit blocks 200
Addition.
For the addition of all pixels, first by circuit blocks 200 perform " 4 × 4 " addition,
Single adder is prepared and by by the multiple outputs from memorizer 154 in output circuit
Zhi Xiang Calais totalizes.In this kind of situation, due to the disposal ability of the adder of output unit
It is 1/16 in the situation that there is not addition in advance, thus is made without high speed processing.
Then, the cyclic access of the block of pixels in first embodiment will be illustrated.
Fig. 5 is the figure of the cyclic access for explaining the block of pixels in first embodiment.
Herein, for simplicity's sake, show that wherein block of pixels is to be formed by 16 pixels and shared
The example of one sensing circuit.
16 pixels included in each block of pixels 160 (160-0 to 160-3...) are to follow
Ring mode sequentially accesses.
Assume that frame rate is 1/30 second and each pixel performed in this time 1023 readings,
Then a cycle of block processes is of about 32 microseconds.This time needs to 16 pictures
The reading of element.
In Fig. 5 the time division on transverse axis be each pixel of being allocated for accessing in block time
Between t, and Breadth Maximum is 2 microseconds.
It addition, when block of pixels 160 (160-0 to 160-3...) is as in the example depicted in fig. 1
When equally including 128 pixels, the access time of each pixel was 250 nanoseconds.
Owing to the digital independent carried out from each pixel and data judgement are all and semiconductor memory
Read similar simple operations, thus in this time width, there is enough surpluses.
In above-mentioned cyclic access, cyclically perform reset RST and the reading of each pixel DPX
RD。
In this kind of situation, access sequential is different because of each pixel, but from reset RST to reading
The time for actual exposure EXP of RD is equal for all pixels.
Owing to time of exposure can be changed by the sequential changing reset RST in range of DO, because of
And adjustable sensitivity is without impacting other circuit operations.
Such as, if once read after RD immediately to reset upper in each pixel DPX
RST is set (with being read as identical time division), then time of exposure become maximum and
This corresponds to low illuminance image objects.
On the contrary, if being read out RD after reset RST is set immediately (for once
Time division before reading), then time of exposure becomes the shortest and this is corresponding to high illuminance thing
Body imaging.If it addition, change reset timing by some steps in identical time division,
Then can more freely select time of exposure.
It is one after the other to perform after reading RD that although counting processes CNT, but the reading of next pixel
Taking is parallel starting.
Herein, such as, No. 4 pixel was read in the t4 moment, and No. 1 pixel is reset.
Additionally, process with this counting being performed in parallel No. 3 pixel.
In this example, the reset with No. 1 pixel of reading of No. 4 pixel is with time division
Mode sequentially performs.But, each pixel is respectively provided with Fig. 4 institute of single reset mechanism
Show in the situation of pixel, can simultaneously and in parallel perform the 4th by driving two row to control circuit
Number pixel read the reset with No. 1 pixel.
As it has been described above, there is stagewise knot according to the cmos image sensor 100 of first embodiment
Structure, described in this hierarchical structure, multiple pixels DPX are shared sensing circuit 121 (121-0 are extremely
121-3) and depositor 151 (151-0 to 151-3), and the plurality of sensing circuit 121 (121-0
To 121-3) share counting circuit 153.
Can optimize often have altogether according to the relation between the area occupied of access time and each circuit
Enjoy rate (sharing rate).
It addition, (row orientation) upper arrangement, shown in multiple Fig. 1, four can be had in the horizontal direction
The circuit blocks 200 of block of pixels.
For example, by 32 circuit blocks 200 of arranged in parallel and make these circuit blocks parallel
Ground operation, can form the light receiving element including " 128 × 128 " individual pixel.Hereinafter, to this
The performance of light receiving element is estimated.
Assume to perform the imaging of each pixel 10 with 30 frames/speed per second.
When result is used in single-photon enumerator by the counts phase adduction of all pixels,
The maximum calculating total photon counting sum per second is " 128 × 128 × 1023 × 30 ", reaches 5
Hundred million.
Even if only using the range of linearity of Poisson distribution, maximum is also 200,000,000.If carried out correction,
Then counting is also possible to exceed above-mentioned value.
Additionally, as it has been described above, this light receiving element can be used for two-dimensional imaging according to its application, and
Also act as the single light receiving element for photon counting.
Rewrite internal register value by outside, operator scheme can be easily varied.At Same Way
In, also it is programmable by change reset timing changing time of exposure.
Additionally, as it has been described above, digital pixel used in the present embodiment has electrooptical device,
And there is the function for exporting the signal of telecommunication according to photon incidence.Such as, used in the present embodiment
Digital pixel be configured to as shown in Figure 4.
Additionally, by offsetting the exporting change pixel when reading from the data that digital pixel is read,
Following self-reference function is introduced when being expected to sense.
It is to say, read the signal output after the output reset state and exposure from pixel,
And sensing circuit to any one in both plus deviant will be by obtaining plus deviant
The signal obtained is compared with another signal of both, thus performs binary and judge.
Fig. 6 is the circuit diagram of the example showing the sensing circuit with self-reference function.
Sensing circuit 121A shown in Fig. 6 includes switching SW121, SW122 and SW123, electricity
Container C121 and C122, phase inverter IV121 and IV122 and shifted signal OFFSET
Supply connection L121.
The terminal a of switch SW121 is connected to the first terminal and the capacitor of capacitor C121
The first terminal of C122, and the terminal b switching SW121 is connected to terminal SIG, terminal SIG
It is connected to output signal circuit.
Second terminal of capacitor C121 is connected to the input terminal of phase inverter IV121, switch
The terminal a and the terminal a of switch SW123 of SW122.
Second terminal of capacitor C122 is connected to supply connection L121 of shifted signal OFFSET.
The lead-out terminal of phase inverter IV121 is connected to input terminal and the switch of phase inverter IV122
The terminal b of SW122.
The lead-out terminal of phase inverter IV122 is connected to switch terminal b and the lead-out terminal of SW123
SAOUT。
Herein, shown in Fig. 6, will there is self-reference function to using in the example of pixel shown in Fig. 4
Sensing circuit and the example of read operation that performs illustrate.
Fig. 7 A to Fig. 7 F is the sequential chart of the example for explaining read operation, and this read operation is
The sensing circuit shown in Fig. 6 with self-reference function is used to perform in the example of pixel shown in Fig. 4
's.
Fig. 7 A display applies reset pulse RESET, Fig. 7 B to reset circuit shown in Fig. 4 182
Display applies the reading pulse READ to transmission line 181 shown in Fig. 4.
On/off (ON/OFF) state of Fig. 7 C display switch SW121, Fig. 7 D shows out
The ON/OFF state of pass SW122, the ON/OFF state of Fig. 7 E display switch SW123,
And Fig. 7 F display offset signal OFFSET.
First, ON switch SW121 and SW122 are to apply reset pulse RESET to pixel
The reset circuit 182 of DPX, so that the pixel output in reset state is read to input terminal
SIG。
Then, disconnect switch SW122, to keep the output that resets.
Then, pulse READ is applied to the transmission line 181 of pixel DPX, and using as
The signal output input of exposure results is to terminal SIG, to disconnect switch SW121.
In this time period, the input of shifted signal OFFSET is maintained at 0V.
Then, slightly increase the level of shifted signal OFFSET, to be incited somebody to action by capacitor C122
Drift potential is added to read on signal.
Then, by the output in reset state and by little deviant being added on reading signal
The output obtained compares.
When photon incides in the pixel shown in Fig. 4, latter signal has lower than preceding signal
Current potential.Therefore, by " 0 " output to lead-out terminal SAOUT.
When photon does not incides in pixel, by contrary in the way of when photon incides in pixel
Mode by " 1 " output to lead-out terminal SAOUT.
Finally, ON switch SW123, to latch judged result.
This self-reference function counteract in each pixel due to amplify transistor 114 changes of threshold and
The steady noise occurred so that little signal is performed accurate binary and judges also to be possibly realized.Separately
Outward, in said sequence, also can offset the kTC noise occurred when resetting.
It addition, when being simulated the AD conversion of signal, at correlated-double-sampling (correlated
Double sampling, CDS) in be also contemplated by that similar effect occurs.
In this kind of situation, in the sensing that binary judges, dual reading and needed for judging
Time is always fixed.Therefore, the amplification transistor from pixel can also be reduced in the following manner
Or the thermal noise of sensing circuit itself or the impact of flicker noise (flicker noise).
It is to say, owing to the noise in twi-read low-frequency band usually can be in a similar fashion
Superposition, thus impact can be cancelled.It addition, the noise in high frequency band can limit the electricity of sensing circuit
The sensitivity of capacitive load.
Therefore, by can correctly perform sensing in the range of capacity load is set as far as possible
Greatly, the bandwidth of influential noise can be contracted to minimum.
In correlated-double-sampling when being AD converted, carry out changing the required time in many feelings
Shape can change according to signal intensity or figure place.Therefore, the noise in broadband will necessarily affect electricity
Road.
Not limited by above-mentioned example, described circuit can be by by being added to deviant in reset signal
And the signal obtained is compared with reading signal, thus perform judgement.
Alternatively, it is possible to first obtain and read signal, then pixel is resetted
To obtain reset signal, and to any one in the two signal plus deviant, to compare
Judge.In this kind of situation, it is difficult to kTC noise is offset, but pixel change can be made
The steady noise become is offset.Therefore, advantage is, this can be widely applied to all pixels and joins
Put.
Even if applying this self-reference function, the number of sensing circuit is also far smaller than common AD conversion
Number in device.Therefore, there is no need to take big area.
Additionally, for realizing digital pixel, using internal scale-up version photodiode is also good choosing
Select.
Known avalanche photodide (avalanche photodiode, APD) is internal scale-up version
Photodiode, it is by being made to accelerate to produce snow through the electron hole pair of opto-electronic conversion by electric field
Collapse amplification.
The photon counter of the use APD in correlation technique only perform picture element signal Simulation scale-up,
Perform pulse export and detect this pulse output by external circuit.In this kind of situation, use lid
Leather pattern (Geiger mode) performs the amplification of about 1,000,000 times and detects single-photon.Therefore,
Need the high pressure of 40V, and testing circuit is not the most provided.Accordingly, it is difficult to realize the small-sized of pixel
Change or high-speed parallel operation.
On the other hand, the digital pixel being applied to the present embodiment need not Geiger mode angular position digitizer operation.Due to
In the chip using the configuration of simple circuit, carry out the detection of time division binary can significantly decrease inspection
Slowdown monitoring circuit noise and signal load, thus with little gain, single-photon can be entered in linear model
Row detection.
Further, in this kind of situation, the image element circuit shown in Fig. 4 can be used, if but such as obtained
Obtain the amplification of 1000 times, then without providing the amplification transistor of pixel.
3. the second embodiment
Then, by wherein internal scale-up version diode applications in the example of the configuration of light receiving element
It is explained and is used as the second embodiment.
Fig. 8 is the figure for explaining the second embodiment of the present invention, and is also that display is real with first
Execute the figure of the configuration example of the corresponding block of pixels using internal scale-up version photodiode of example.
In a second embodiment, block of pixels 160B only includes one group of internal scale-up version photodiode
111B and transmission (selection) transistor corresponding to internal scale-up version photodiode 111B
112B。
It is to say, pixel DPXB in this example is only by internal scale-up version photodiode
111B and transmission (selection) the transistor 112B corresponding to internal scale-up version photodiode 111B
Formed.It is connected to the gate electrode of the transmission transistor 112B of each pixel DPXB in a line
Common transmitted circuit 181B.It addition, the transmission crystal of multiple pixels of each block of pixels 160B
The source electrode of pipe 112B or drain electrode are connected to share output signal circuit 131.
It addition, reset transistor 113B is connected to each output signal circuit 131 and reset potential circuit
Between LVRST.The gate electrode of each reset transistor 113B is connected to share reset circuit
182B。
In this example, each pixel DPXB is all by reset transistor 131B, output signal line
Road 131 and transmission transistor 112B reset.
4. the 3rd embodiment
Then, by the multiple light using the image device according to first embodiment or the second embodiment
The example of the imaging device configuration of receiving device (light receiving unit and circuit blocks) is explained
As the 3rd embodiment.
In the quasiconductor imaging as representative with normal CCD type or cmos sensor type image device
In device, in the amplifier circuit of CCD output unit or be connected to each picture of cmos sensor
There is characteristic variations in the source follower circuit of element.
Additionally, in general semiconductor imaging, this characteristic variations is reflected with chapter and verse
By by the number of the accumulation electronics efficiency that is converted into analog electrical signal change on.
Further, since the conversion change of a/d converter is also reflected directly on signal intensity, because of
And the change of the effective sensitivity of respective chip is the biggest.
Therefore, when by the plurality of image device being arranged in general semiconductor imaging device
When row perform large area imaging, need to make sensitivity uniform by the gain of each chip of adjustment.
On the other hand, owing to applying the image device of the embodiment of the present invention of time division photon counting
Analogue signal is not processed by (light receiving element), thus sensitive in respective chip
Degree change is the least.
Therefore, by these image devices are arranged in one-dimensional rectilinear form or two-dimensional array, can shape
Become big imaging surface.
For example, by being arranged at before light receiving element by flasher, this imaging can be used to fill
Put and carry out radiant image in medical treatment or safety applications.Further, since highly sensitive and noisiness is little,
Thus imaging device can be correctly detected minimal amount of radiation.
It is thus possible, for instance in imaging of medical, the amount radiated by restriction, can substantially reduce to be imaged
Light exposure suffered by object.
Fig. 9 A and Fig. 9 B is when the image device of the embodiment of the present invention is applied to computerised tomography
The schematic diagram of imaging device during (Computer Tomography, CT) imaging.
X-ray source 410 and number is included around the imaging device 400 of object OBJ with cylindrical shape
Thousand image devices 420, image device 420 is arranged in the form of an array in the face of x-ray source 410
And use photon counter according to embodiments of the present invention.
Array surface bends along cylindrical inwall so that each image device is in the face of x-ray source 410
And between each image device and x-ray source 410, there is equal distance.
In each image device 420, flasher 422 is attached to light in an embodiment of the present invention
The optical receiving surface 421a side of sub-count device 421, and collimator (collimator) 423 setting
Light incident side in X-ray.
It is transmitted through object OBJ from x-ray source 410 and is then transmitted through the X of collimator 423
Ray is converted into visible ray by flasher 422 and is detected by photon counter 421, thus draws
Amount of radiation.
Imaging device 400 rotates around object OBJ, thus carries out object OBJ so that institute is angled
Imaging；And the data obtained are performed calculation process, saturating to produce the cross section of object OBJ
Projection picture.
The photon counter of image device according to embodiments of the present invention has the highest dynamic range
And highly sensitive reading, and not there is noise.
Further, since image device includes counting circuit in inside, thus the highest position
Resolution performs high speed imaging.Therefore, even if substantially reducing the amount of X-ray, it is possible to realize essence
True imaging, and this system is the most expensive.
As the example of similar imaging system, there is the SPECT for medical applications.
SPECT uses flasher to detect gamma-rays, but uses photomultiplier tube to detect very small amount
Gamma-rays.
If the photon counter in the use embodiment of the present invention, then can significantly reduce the one-tenth of detector
This, and also without using outer detecting circuit.Accordingly, because the number of detector can be increased
Big decades of times, thus sensitivity can be significantly increased.
Figure 10 is the figure of the example showing Linear Imaging Device, in this Linear Imaging Device, according to
The image device (light receiving element) of the embodiment of the present invention is aligned to one-dimensional rectilinear form.
Image device (light receiving element) 510 according to embodiments of the present invention replaces with form of straight lines
Be arranged in linear imaging device 500.
By moving linear image device 500 in the direction of arrow, can be at image device (light
Receiving device) 510 effective pixel area 520 in wide imaging surface is carried out Uniform Scanning.
For being scanned, preferably on the longitudinal direction (line direction) of effective pixel area 520 with
One determining deviation progressively moves, or loose impediment.Can overlap each other by making some pixel
Coupling part between effective pixel area is averaging processing.
Such as, the effective pixel area 520 of each image device (light receiving element) 510 all has
There is following configuration, wherein 128 blocks of pixel array unit shown in Fig. 1 are arranged in horizontal direction
On (column direction).It is to say, the valid pixel of each image device (light receiving element) 510
Region 520 is formed by " 512 × 128 " individual physical picture element.
(patrol here, it is assumed that the addition results of the count value of " 8 × 8 " individual physical picture element is pixel unit
Collect pixel), then the number of logical pixel is 64 × 16.When each physical picture element is respectively provided with 10
Resolution time, the resolution of each logical pixel is 16.
If these 64 image devices (light receiving element) 510 are as shown in Figure 10 by with linear
Formula arranges, then be arranged with the logical pixel of 4096 16 altogether in linear imaging device 500.
This Linear Imaging Device is easily achieved small-sized imaging.Therefore, should for medical treatment or safety
X-ray imaging can be by combined with flasher and there is high precision and the highest spirit
Sensitivity (low noise).
Owing to the absolute magnitude of X-ray can be reduced, thus even carrying out line imaging (line imaging)
Time also can suppress light exposure.It addition, this system is the most expensive.It addition, can by multiple this kind linear
Imaging device arranges in a scanning direction with equidistance, to shorten scanning distance.This kind of situation
In, light exposure can be reduced further.
Additionally, for preventing the X-ray being transmitted through flasher from damaging image device, such as can will become
As device 420 is positioned over the position away from flasher 422 and uses optical fiber 424 as shown in figure 11
The transmitting light of flasher is sent to image device 420.
In the example depicted in fig. 11, for stopping that the X-ray shield plate 425 of X-ray is arranged
The light of optical receiving surface 421a and flasher 422 in the photon counter 421 of image device 420
Receive between unit, and optical fiber 424 is configured to walk around X-ray shield plate 425.
On the other hand, for the measurement in medical treatment or scientific domain carries out radiation detection, Ke Nengxu
The information of the irradiating angle of radiation to be had.Photon counter used in this situation needs have height
Temporal resolution, for specify the detection time.
For example, in the PET of medical applications, the active material granting patient produces
Positron, and positron carries out compound to excite a pair gamma-rays immediately with electronics.γ is penetrated by this
Line is launched in relative both direction, and by two detectors (flasher) simultaneously and also
Detect capablely.In this way, the straight line connecting two detectors is estimated depositing of active material
?.
It is said that in general, in PET, need to perform detecting simultaneously with high temporal resolution
Judge, to reduce noise during detection.
Figure 12 is that incident direction is estimated by display by detecting photon simultaneously
The schematic diagram of example.
Figure 12 shows the simple application in SPECT.
Owing to being perpendicular to flasher (detector) 422 from the gamma-rays that object OBJ is sent
Incident gamma-rays, a large amount of light subgroup are made simultaneously incident to the photon counting of an image device 420
On device 421.
On the other hand, owing to inciding the gamma-rays on flasher (detector) 422 obliquely,
The each smooth subgroup being distributed in the plurality of image device 420 is the most incident.
Therefore, utilize the information relevant with the distribution of simultaneously detected photon, can be to gamma-ray
Incident direction is estimated.
Generally, collimator is used to utilize the letter relevant with the photon of only vertical incidence in SPECT
Breath.But, if detector has high temporal resolution and can readily use these detectors,
Then can significantly more expand quantity of information.
It is to say, for by reducing the detection error in this detector to improve accuracy of detection, making
The temporal resolution that detection is used when judging while to photon incidence is higher most important.
Hereinafter, a kind of relevant to the embodiment of the present invention being used for will be improved in photon counter
The new technique of temporal resolution of optical detection and chip architecture be explained that to be used as the 4th real
Execute example and the 5th embodiment.
5. the 4th embodiment
Figure 13 is to show cmos image sensor (imager according to a fourth embodiment of the present invention
Part) the figure of configuration example.
Root shown in cmos image sensor (image device) 100C Yu Fig. 1 of the 4th embodiment
Being according to the difference of the cmos image sensor 100 of first embodiment, it has for carrying
The function of the temporal resolution of high optical detection.
Substantially, cmos image sensor 100C is configured to make judged result integrating circuit portion
150C has the function of the temporal resolution for improving optical detection.
Judged result integrating circuit portion 150C include the 120, first depositor portion 210 of sensing circuit portion,
Second depositor portion 220,4 BITBUS network 230 and output circuit 240.
First depositor portion 210 has 4 bit register 211-0,211-1..., deposits for these 4
Device 211-0,211-1... transmit corresponding with the arrangement of the pixel column of pixel array unit 110 for sequentially
The output of sensing circuit 121-0,121-1....
The configuration that first depositor portion 210 is had is equivalent to wherein line buffer and is arranged in four
Configuration in row, these line buffers are for keeping and export the reading data of a row.
Second depositor portion 220 has 4 bit register 221-0,221-1..., deposits for these 4
Device 221-0,221-1... for sequentially transmit the first depositor portion 210 4 bit register 211-0,
The output of 211-1....
The configuration that second depositor portion 220 is had is equivalent to wherein line buffer and is arranged in four
Configuration in row, these line buffers are for keeping and export the reading data of a row.
The output data in the second depositor portion 220 are sent to output circuit 240 by bus 230.
Output circuit 240 has counting circuit 241 and output latch 242.Counting circuit 241
" 1 " data of the every a line transmitted by bus 230 are counted or are added.
Further, in the fourth embodiment, block of pixels 160 (160-0,160-1...) is as first
Embodiment is equally configured to include 128 digital pixel DPX and selection circuit.This selection
Circuit selects a pixel in these pixels to perform to reset or read.
Further, in the fourth embodiment, according to the row control line driven by horizontal drive circuit 170
Road 180 selects a pixel in block of pixels.
When being read out, photon whether will be had to incide in selected pixel and to export extremely as the signal of telecommunication
Output signal circuit 131, and judged bi-values by sensing circuit 121 (121-0,121-1...).
For example, sensing circuit 121 (121-0,121-1...) incides in selected pixel at light
Time determine that " 1 " is judgment value, and determine when light does not incides in selected pixel " 0 " for judge
Value, and latch this judgment value.
Then, the judgment value of sensing circuit 121 (121-0,121-1...) is sent to the one 4
First of 4 bit registers 211 (211-0,211-1...) in depositor portion.Therefore, just can be right
Next line carries out signal-obtaining and judgement.
Four row are continuously performed this operation.When the judgment value of each row is stored in 4 bit registers
Time in the not coordination of 211 (211-0,211-1...), these judgment value are transported simultaneously to next stage
4 bit registers 221 (221-0,221-1...) in the second depositor portion 220.
Then, by 4 bit registers 221 in the second depositor portion 220 in every string (221-0,
Data retained in 221-1...) sequentially export to 4 BITBUS network 230, are next transferred to output electricity
Road 240.
Counting circuit 241 is arranged in output circuit 240, carries out with " 1 " data to every a line
Counting or addition.After all column data projects of four row are all transmitted, by adding of every a line
Method value stores in output latch 242.
On the other hand, and the reading that above-mentioned transfer operation continuously performs pixel array unit 110 concurrently,
And the judgment value of four row subsequently is stored to 4 bit registers 211 in the first depositor portion 210
In (211-0,211-1...).It is to say, digital independent and data are to the biography of output circuit 240
Sending is pile line operation (pipelined).
In this chip, it is assumed that the reading performing a row needed for 250 nanoseconds, then perform 128 row
Data transmit time be 1 microsecond.
Owing to 4 of row were transmitted as 7.8 nanoseconds, thus the data in general semiconductor circuit
Delivery time is enough.Peripheral circuit configuration is the simplest.
It addition, for the digital independent carried out from outside, preferably in 1 microsecond, acquisition is stored in defeated
Go out the count value of four row in the output latch 242 of circuit 240.
Due to this time for reading very abundant, thus external system can be from a large amount of imagers
Part reads data concurrently.
The reading data of all row can be added by external system, to obtain in maximum 32 microseconds
The total number of photon on image device is incided in the unit exposure time.
By this being repeated 1025 circulations and continuously count value being added, can be 1/30
24 gradation datas are obtained in second.
Herein, the photon inspection that with reference to Figure 14, use will be carried out according to the image device of the 4th embodiment
The temporal resolution surveyed illustrates.
Figure 14 is for explaining the photon detection that use is carried out according to the image device of the 4th embodiment
The figure of temporal resolution.Figure 14 shows that every a line is sequentially performed by carrying out the most over time
The state read and reset.
In PET etc., when gamma-rays incides on flasher, produce a large amount of photon, these light
Son incides on the image device of correspondence.
Assume that this moment is dotted line 251, then photon reading of being only expert at (represents with thick oblique line: RD)
Middle optionally being detected, wherein time of exposure includes this time.
In this example, performing detection, being read out (row ground immediately until producing from photon
Location: 7) start till described row address almost circulates a circle, then data vanishing.Namely
Say, if the cycle of address cycle one circle of being expert at given either continuously or intermittently appears as the line number of more than 1
According to output, then this is that photon produces.
Herein, the total number of the photon being made simultaneously incident on image device is that the row data in a circle are defeated
The method of summated ratings value gone out.It addition, can estimate, the generation time is to appear as 1 values above for the first time
Output row the reading time of the row before time and this row of reading between 252 at.Time
Resolution is the reading time of a row, i.e. 250 nanoseconds.
It is to say, utilize the method, by same what every a line was read that sequential shifts
Time perform photon detection in a looping fashion, the distribution of the incident number of times of every a line determine when multiple
Time of incidence when photon is made simultaneously incident on image device.In this kind of situation, the reading of every a line
Take sequential shift amount corresponding to temporal resolution.Therefore, if making shift amount less, then detect
Temporal resolution proportionally can increase with shift amount.
6. the 5th embodiment
Figure 15 is to show cmos image sensor (imager according to a fifth embodiment of the present invention
Part) the figure of configuration example.
Cmos image sensor (image device) 100D Yu Figure 13 institute according to the 5th embodiment
Show that the difference of the cmos image sensor 100C according to the 4th embodiment is following aspect.
In the fourth embodiment, shift amount is no better than the reading time of a line.Further, the 5th
In embodiment, even if reducing shift amount in the case of not changing the reading time, it is possible to improve the time
Resolution.
In judged result integrating circuit portion 150D, two adjacent sensing circuit 121-0 and 121-1
Corresponding to a row in sensing circuit portion 120D.
Corresponding, two 4 adjacent bit register 211-0 of the first depositor portion 210D
And 211-1 is corresponding to a row.
It addition, in the second depositor portion 220D, bit register 222-0... deposits corresponding to 4
Device and arrange.
Further, in the 5th embodiment, block of pixels 160 (160-0,160-1...) is as the 4th
Embodiment is equally configured to include 128 digital pixel DPX and selection circuit.This selection
Circuit selects a pixel in these pixels to perform to reset or read.
Further, in the 5th embodiment, according to the row control line driven by horizontal drive circuit 170
Road 180 selects a pixel in block of pixels.
It addition, in the 5th embodiment, all prepare two circuit for reading for every string, make
Alternately different circuit must be attached from even number line in odd-numbered line.
Such as, when carrying out the reading of pixel DPX00, photon whether will be had to incide selected pixel
On export to output signal circuit 131-1 as the signal of telecommunication, and judged by sensing circuit 121-0
Bi-values.For example, sensing circuit 121-0 determines " 1 " when light incides in selected pixel
For judgment value, and determine that when light does not incides in selected pixel " 0 " is judgment value, and latch
This judgment value.Then, the judgment value of sensing circuit 121-0 is sent to the one 4 bit register portion
First of the 4 bit register 211-0 of 210D.Four row perform this kind read.
On the other hand, when carrying out the reading of pixel DPX01, photon whether will be had to incide selected
Export to output signal circuit 131-1 as the signal of telecommunication in pixel, and by sensing circuit 121-1
Judge bi-values.Judgment value is latched by sensing circuit 121-1, is then sent to next stage
4 bit register 211-1.Four row perform this kind read.
After four row are performed above-mentioned reading, will determine that value is simultaneously transferred to the second of next stage
The eight bit register 222 of depositor portion 220D.Then, every a line is held in eight bit register
Data in 222 sequentially export to 8 BITBUS network 230D, are next transferred to output circuit 240D.Meter
Number circuit 241D is arranged in output circuit 240D, in terms of " 1 " data to every a line are carried out
Number or addition.After all column data projects of eight row are all transmitted, by the addition of every a line
Value stores in output latch 242D.
Therefore, the process reading, transmit and exporting is substantially identical with the process shown in Figure 14,
But in this example, read operation is that the two lines road according to odd-numbered line with even number line divides.
While sequential is shifted half period, it is performed in parallel these operations.
Herein, the photon inspection that with reference to Figure 16, use will be carried out according to the image device of the 5th embodiment
The temporal resolution surveyed illustrates.
Figure 16 is for explaining the photon detection that use is carried out according to the image device of the 5th embodiment
The figure of temporal resolution.Figure 16 shows that every a line is sequentially performed by carrying out the most over time
The state read and reset.
By providing two reading circuits concurrently, it is not necessary to the reading waiting for previous row just can rise
The reading of dynamic next line.It addition, the half that shift amount is read cycle of the time of reading.
In PET etc., when gamma-rays incides on flasher, a large amount of photon can be produced, these
Photon incides on the image device of correspondence.Assume that this moment is dotted line 253, then photon is only expert at reading
Take that (representing with thick oblique line: optionally detected in RD), wherein time of exposure includes this time.
In this example, performing detection, being read out (row ground immediately until producing from photon
Location: 12) time start till row address almost circulates a circle, then data vanishing.Namely
Say, if the cycle of address cycle one circle of being expert at given either continuously or intermittently appears as the row of 1 values above
Data export, then this is that photon produces.
Herein, the total number of the photon being made simultaneously incident on image device is that the row data in a circle are defeated
The method of summated ratings value gone out.It addition, can estimate, the generation time is to appear as 1 values above for the first time
Output row read between time and the reading time of the row before this row 254 at.
Temporal resolution is the half of the read cycle of a row, i.e. 125 nanoseconds.
Therefore, the shift amount of read cycle can be reduced in the case of not shortening read cycle itself.
Such as, it is possible to by increasing the number of reading system further, reach suitable with photomultiplier tube
Temporal resolution.
For example, in the situation being applied to PET, by a large amount of one-tenth according to embodiments of the present invention
As device is arranged in annular；And the per unit for each image device exposes, and system is the most sequentially
Read the number of the photon of every a line.Then, when the generation of photon being detected, will be the most incident
The total number of the photon on image device and timestamp (time stamp) note of the generation light period of the day from 11 p.m. to 1 a.m
Record on memorizer.These are the necessity collected in the most efficient manner and sufficient data.
By being combined these data after the imaging is complete identifying that photon is made simultaneously incident to
A pair image device in face, it is believed that irradiate material connecting to exist on this line to image device.
Compared with correlation technique, utilize this kind of technology can increase the number of image device itself significantly.
It addition, the group of image device incident while also can extending photon to be determined significantly
Close degree of freedom.Accordingly, because sensitivity can be significantly increased, thus can significantly decrease and be granted
The amount of medicine.Therefore, it is possible to decrease the radiation irradiation dose of irradiated object, and by suppression light
The most simultaneously producing of son improves certainty of measurement.
It addition, also act as according to the solid imaging element of above-mentioned first embodiment and the second embodiment
Digital camera or the image device of video camera.
7. sixth embodiment
Figure 17 is the figure of the configuration example showing camera arrangement, applies root in this camera arrangement
Image device according to the embodiment of the present invention.
As shown in figure 17, camera arrangement 600 includes image device 610, implements according to the present invention
The cmos image sensor (image device) 100 of example can be applicable to image device 610.
Camera arrangement 600 includes for inciding image device 610 (formation object image)
Pixel region on the optical system that guides of light, such as formed on imaging surface into
Penetrate the lens 620 of light (image light).
It addition, camera arrangement 600 includes the drive circuit (DRV) for driving image device 610
630 and for processing the signal processing circuit (PRC) 640 of output signal of image device 610.
Drive circuit 630 includes clock generator (not shown), and clock generator produces various
Clock signal, and drive image device 610 with predetermined clock signal, these clock signals include
For driving start pulse or the clock pulses of the circuit in image device 610.
It addition, signal processing circuit 640 performs prearranged signals to the output signal of image device 610
Process.
It is recorded in record media by the picture signal handled by signal processing circuit 640 (such as to deposit
Reservoir) on.By printer etc., the image information being recorded on record media is carried out hard copy
(hard copy).It addition, by the picture signal handled by signal processing circuit 640 as dynamically
Image is projected on the monitor that formed by liquid crystal display etc..
As it has been described above, by arranging above-mentioned solid-state in imaging device (such as digital camera)
As device 100 is as image device 610, the high accuracy photographing unit that power consumption is low can be realized.
Although it addition, when arranging pixel and sensing circuit on same semiconductor substrate, needing
Use plurality of pixel to share configuration shown in Fig. 1 of sensing circuit, but the most also occur
One utilizes wafer to engage (wafer bonding) technology with multiple layers to form the skill of semiconductor layer
Art.In this kind of situation, such as, the sensing of each pixel can be set in the lower floor of each pixel
Circuit.
Further, in this kind of situation, the integrated of enumerator is included by making multiple sensing circuit share
Circuit, can be easily performed the addition between pixel.Therefore, dynamic range during imaging can be improved.
It will be appreciated by those skilled in the art that and require and other factors according to design, can be at this
Carry out in the range of bright appended claim or its equivalent various amendment, combination, secondary combination with
And change.
Claims (12)
1. an image device, comprising:
Pixel array unit, it is used as light receiver, sets in the form of an array in described pixel array unit
It is equipped with multiple pixels with electrooptical device, when photon incidence, described pixel output telecommunications
Number；
Sensing circuit portion, is wherein arranged with multiple sensing circuit, and described sensing circuit receives from institute
State the described signal of telecommunication of pixel and perform about whether there being photon to incide described picture in predetermined period
Binary on element judges；And
Judged result integrating circuit portion, it has following function, i.e. for each pixel described or pin
Multiple judged results of described sensing circuit are integrated by each pixel group,
Wherein, described judged result integrating circuit portion performs photon counting with in the plurality of pixel
The plurality of judged result be integrated, thus draw the photon incided on described light receiver
Quantity, and
Wherein, by utilizing the optical receiving surface divided with equidistance and by with equidistance
The time shaft divided forms multiple grid in described light receiver, performs described photon counting.
Image device the most according to claim 1,
Wherein, each grid has two values: logic 1 and logical zero,
It is described that each in described sensing circuit all determines whether that one or more photon incides
In each grid, and when existing incident, regardless of the number of incident photon, all it is judged as 1,
And when there is not incidence, it is judged that it is 0, and
Described judged result integrating circuit portion to the 1 of each described sensing circuit and count.
3. according to the image device according to any one of claim 1～2,
Wherein, described pixel array unit is formed with multiple block of pixels, each described block of pixels
Including multiple pixels and selected member, and
In described sensing circuit portion, list is set corresponding to each block of pixels in described block of pixels
Only sensing circuit.
Image device the most according to claim 3,
Wherein, the described selected member of described block of pixels selects respective pixel block in a looping fashion
In described pixel, and to the signal of the described sensing circuit selected pixel of output, and
Described sensing circuit judge from once choose current selection fixed cycle in each institute
State and in pixel, whether have photon incident.
Image device the most according to claim 4,
Wherein, being provided with reset function, described reset function is for multiple by each pixel in described pixel
Position to the not incident state of photon, and
Being provided with adjustment function, described adjustment function is for by pixel each in described block of pixels
Reset processing is inserted so that the exposure in each pixel between selectivity output and the output of next selectivity
Time is fixed, and adjusts exposure cycle.
6. according to the image device according to any one of claim 1～2,
Wherein, described judged result integrating circuit portion includes:
Counting circuit, it is for performing the counting being integrated the judged result of described sensing circuit
Process；And
Memorizer, it is for storing the count results of each pixel in described counting circuit,
Wherein, the plurality of sensing circuit is shared described in be integrated described judged result
Counting circuit.
7. according to the image device according to any one of claim 1～2,
Wherein, in described pixel array unit, the plurality of pixel is arranged in matrix form,
Described judged result integrating circuit portion exports the addition value that the photon in each row is incident.
Image device the most according to claim 7,
Wherein, described judged result integrating circuit portion includes:
At least one depositor portion, it includes at least one line buffer, described at least one post
Storage portion keeps and exports the judgment value of described sensing circuit of each row；
Bus, it transmits the output data of described line buffer；And
Counting circuit, the judged result data of described sensing circuit are integrated by it for execution
Counting processes, and described judged result data transmit via described bus.
Image device the most according to claim 8,
Wherein, in described sensing circuit portion, each row are provided with the sensing circuit of a plurality of circuit,
This sensing circuit performs about the judgement reading multiple pixels, and
Described judged result integrating circuit portion is for reading in each row while shifting the time
The judgment value of described sensing circuit of described a plurality of circuit, described judgment value is maintained at described in post
In storage portion, and it is stored in the described a plurality of circuit in described depositor portion via described bus transmission
Data.
10. according to the image device according to any one of claim 1～2,
Wherein, being provided with reset function, described reset function is for multiple by each pixel in described pixel
Position to the not incident state of photon,
Described sensing circuit by read the signal in reset state and the reading signal after exposure,
To any one in the signal in described reset state and described reading signal plus deviant, and
By the signal by obtaining plus described deviant and the signal in described reset state and described reading
Another signal in the number of winning the confidence compares, and performs described binary and judges.
11. according to the image device according to any one of claim 1～2,
Wherein, multiple circuit blocks is set with straight line or array format, each in described circuit blocks
Circuit blocks all includes that described pixel array unit, described sensing circuit portion and described judged result are long-pending
Parallel circuit portion.
12. 1 kinds of camera arrangements, comprising:
Image device, its image device according to any one of claim 1～2；
Optical system, it is for forming subject image on described image device；And
Signal processing circuit, it is for processing the output image signal of described image device.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010-224235 | 2010-10-01 | ||
| JP2010224235A JP5569314B2 (en) | 2009-10-01 | 2010-10-01 | Image sensor and camera system |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102572319A CN102572319A (en) | 2012-07-11 |
| CN102572319B true CN102572319B (en) | 2016-12-14 |
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