CN102570308A - Nitride semiconductor laser - Google Patents
Nitride semiconductor laser Download PDFInfo
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- CN102570308A CN102570308A CN2012100125614A CN201210012561A CN102570308A CN 102570308 A CN102570308 A CN 102570308A CN 2012100125614 A CN2012100125614 A CN 2012100125614A CN 201210012561 A CN201210012561 A CN 201210012561A CN 102570308 A CN102570308 A CN 102570308A
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Abstract
The invention discloses a nitride semiconductor laser, which comprises sequentially a GaN substrate, a n-GaN layer, a n-AlGaN/GaN superlattice limiting layer, a lower InxGa1-xN gradual change waveguide layer, an InGaN/GaN multiple quantum well active area, an upper InyGa1-yN gradual change waveguide layer, a p-AlGaN electron barrier layer, a p-AlGaN/GaN superlattice limiting layer and a p-GaN contacting layer from bottom to top. In component content increases gradually from bottom to top in the lower InxGa1-xN gradual change waveguide layer and In component content decreases gradually from bottom to top in the upper InyGa1-yN gradual change waveguide layer. The nitride semiconductor laser can decrease the stress between an upper InGaN waveguide layer and the p-AlGaN electron barrier layer effectively, so that ragged steps can be avoided during cleavage. Simultaneously, the nitride semiconductor laser can strengthen optical limiting factors of the laser so as to improve performance of the laser effectively and acquire significant effect.
Description
Technical field
The present invention relates to a kind of nitride semi-conductor laser, belong to laser structure design field in the semiconductor technology.
Background technology
Nitride semi-conductor laser has to be made simply, and volume is little, and is in light weight, and the life-span is long, and the efficient advantages of higher has obtained extensive use in fields such as optical communication, optical pumping, optical storage and laser displaies at present.
Present most nitride semi-conductor laser is the F-P cavity semiconductor laser, and its basic structure is the GaN substrate, the n-GaN layer; N-AlGaN/GaN superlattice limiting layer, following InGaN ducting layer, InGaN/GaN MQW active area; Last InGaN ducting layer, p-AlGaN electronic barrier layer, p-AlGaN/GaN superlattice limiting layer; The p-GaN contact layer, as shown in Figure 1.In the nitride semi-conductor laser device manufacturing processes; Need the laser epitaxial wafer be cleaved into single bar bar, the chamber face that cleavage goes out constitutes two speculums of F-P cavity laser, therefore; The evenness of chamber face is most important to the performance of laser, and the chamber face that cleavage goes out must be that atom level is bright and clean.
In the nitride semi-conductor laser of said structure, there is an area of stress concentration, the interface of promptly going up InGaN waveguide and p-AlGaN electronic barrier layer; Strain here is bigger, when the laser cleavage, occurs rough step easily; Thereby make the chamber face out-of-flatness of laser; It is big that roughness becomes, and the chamber face absorbs and strengthens, and influences the work and the life-span of laser.
Summary of the invention
The object of the invention provides a kind of nitride semi-conductor laser.
For achieving the above object, the technical scheme that the present invention adopts is: a kind of nitride semi-conductor laser comprises the GaN substrate, n-GaN layer, n-AlGaN/GaN superlattice limiting layer, following In from bottom to up successively
xGa
1-xN tapered waveguide layer, InGaN/GaN MQW active area, last In
yGa
1-yN tapered waveguide layer, p-AlGaN electronic barrier layer, p-AlGaN/GaN superlattice limiting layer, p-GaN contact layer;
Said In down
xGa
1-xIn the N tapered waveguide layer, the In constituent content increases gradually from bottom to up;
The said In that goes up
yGa
1-yIn the N tapered waveguide layer, the In constituent content reduces gradually from bottom to up.
Optimized technical scheme, from bottom to up, said In down
xGa
1-xN tapered waveguide layer is the cumulative InGaN ducting layer of one deck In constituent content; Perhaps, said In down
xGa
1-xN tapered waveguide layer comprises at least 3 layers of InGaN ducting layer, and the In constituent content of each layer increases gradually from bottom to up.
Optimized technical scheme, from bottom to up, the said In that goes up
yGa
1-yN tapered waveguide layer is one deck In constituent content InGaN ducting layer decrescence; Perhaps, the said In that goes up
yGa
1-yN tapered waveguide layer comprises at least 3 layers of InGaN ducting layer, and the In constituent content of each layer reduces gradually from bottom to up.
In the preceding text, said In down
xGa
1-xThe scope of the x of N tapered waveguide layer is 0<x<1, comprise that the n type mixes or undopes, its content gradually variational comprises from 0 linearity, parabola or hyperbola and is gradient to 1, can comprise also being divided into more than three layers or three layers that component x increases successively, is increased to 1 from 0.
The said In that goes up
yGa
1-yThe scope of the y of N tapered waveguide layer is 0<y<1, comprise that the p type mixes or undopes, its content gradually variational comprises from 1 linearity, parabola or hyperbola and is gradient to 0, comprises also being divided into more than three layers or three layers that component y reduces successively, reduces to 0 from 1.
Said upward lower waveguide layer can be separate, and the mode of its content gradually variational can be identical or different.
Because the technique scheme utilization, the present invention compared with prior art has advantage:
1. the present invention has developed a kind of new nitride semi-conductor laser; The content gradually variational of the ducting layer of InGaN up and down wherein; Laser structure with respect to the InGaN ducting layer of existing fixed In component; Nitride semi-conductor laser of the present invention can reduce the stress of going up between InGaN ducting layer and the p-AlGaN electronic barrier layer effectively, thereby occurs rough step when avoiding cleavage; Nitride laser of the present invention can strengthen the some optical confinement factor of laser simultaneously, thereby promotes the performance of laser effectively, has obtained the effect that is showing.
2. nitride semi-conductor laser of the present invention is simple in structure, is easy to preparation, has active operation significance.
Description of drawings
Fig. 1 is the structural representation of nitride semi-conductor laser in the background technology;
Fig. 2 is the structural representation of the embodiment of the invention one;
Fig. 3 is the structural representation of nitride semiconductor chip in the embodiment of the invention one;
Fig. 4 during for biasing not existing nitride laser and laser of the present invention can be with comparison diagram.
Wherein: 1, GaN substrate; 2, n-GaN layer; 3, n-AlGaN/GaN superlattice limiting layer; 4a, the fixing following In of component
X2Ga
1-x2The N ducting layer; 4b, following In
xGa
1-xN tapered waveguide layer; 5, InGaN/GaN MQW active area; 6a, the fixing last In of component
Y2Ga
1-y2The N ducting layer; 6b, last In
yGa
1-yN tapered waveguide layer; 7, p-AlGaN electronic barrier layer; 8, p-AlGaN/GaN superlattice limiting layer; 9, p-GaN contact layer; 10, n type ohmic contact layer; 11, p type ohmic contact layer; 12, SiO
2Insulating barrier; 13, the p type adds thick electrode.
Embodiment
Below in conjunction with embodiment the present invention is further described:
Embodiment one
Shown in Fig. 2 ~ 4, a kind of nitride semi-conductor laser adopts the GaN based blue laser device, on self-supporting GaN substrate 1, adopts MOCVD growth structure as shown in Figure 2, the thick n-GaN layer 2 of 2um, the thick n-Al of 1um
0.16Ga
0.84N/GaN superlattice limiting layer 3, the thick n-In of 140nm
xGa
1-xN lower waveguide layer 4b, x is from 0 linear gradient to 0.06 for its In component, the In in 5 cycles
0.17Ga
0.83N/n-GaN MQW active area 5, the trap layer undopes, and thickness is 2nm, builds layer n type and mixes, and thickness is 8nm, the plain gradual change In of 100nm
yGa
1-yThe last ducting layer 6b of N, its In component is from 0.06 linear gradient to 0, the p-Al that 20nm is thick
0.2Ga
0.8N electronic barrier layer 7, the p-Al that 600nm is thick
0.16Ga
0.84N/GaN light limiting layer 8, the p-GaN contact layer 9 that 20nm is thick.
In MOCVD, grown behind the epitaxial wafer, carried out short annealing, 800 ℃ of nitrogen atmosphere 20min; After the annealing; Carry out the device technology of laser and make, obtain ridge nitride semi-conductor laser as shown in Figure 3, n type ohmic contact layer 10, p type ohmic contact layer 11, SiO
2Insulating barrier 12, p type add thick electrode 13.
Fig. 4 when not pressurizeing up and down in the InGaN ducting layer In component be 0.03 conventional laser and present embodiment laser can be with comparison diagram, as shown in Figure 4, change front and back; The laser energy band diagram is almost constant; Therefore, laser of the present invention can not change the electrology characteristic of laser, because high in the In component of InGaN/GaN MQW active area side; The refractive index of material is big; Therefore the some optical confinement factor of laser provided by the present invention will increase, thereby helps promoting the performance of laser, increases the power output of laser.
Above-described specific embodiment; The object of the invention, technical scheme and beneficial effect have been carried out further explain, and institute it should be understood that the above is merely specific embodiment of the present invention; Be not limited to the present invention; All within spirit of the present invention and principle, any modification of being made, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.For example, change the In content gradually variational mode of InGaN ducting layer up and down, change the doping type of InGaN ducting layer up and down etc.
Claims (3)
1. a nitride semi-conductor laser is characterized in that, comprises GaN substrate (1) from bottom to up successively, n-GaN layer (2), n-AlGaN/GaN superlattice limiting layer (3), following In
xGa
1-xN tapered waveguide layer (4b), InGaN/GaN MQW active area (5), last In
yGa
1-yN tapered waveguide layer (6b), p-AlGaN electronic barrier layer (7), p-AlGaN/GaN superlattice limiting layer (8), p-GaN contact layer (9);
Said In down
xGa
1-xIn the N tapered waveguide layer (4b), the In constituent content increases gradually from bottom to up;
The said In that goes up
yGa
1-yIn the N tapered waveguide layer (6b), the In constituent content reduces gradually from bottom to up.
2. nitride semi-conductor laser according to claim 1 is characterized in that: from bottom to up, and said In down
xGa
1-xN tapered waveguide layer (4b) is the cumulative InGaN ducting layer of one deck In constituent content; Perhaps, said In down
xGa
1-xN tapered waveguide layer (4b) comprises at least 3 layers of InGaN ducting layer, and the In constituent content of each layer increases gradually from bottom to up.
3. nitride semi-conductor laser according to claim 1 is characterized in that: from bottom to up, and the said In that goes up
yGa
1-yN tapered waveguide layer (6b) is one deck In constituent content InGaN ducting layer decrescence; Perhaps, the said In that goes up
yGa
1-yN tapered waveguide layer (6b) comprises at least 3 layers of InGaN ducting layer, and the In constituent content of each layer reduces gradually from bottom to up.
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| CN2012100125614A CN102570308A (en) | 2012-01-16 | 2012-01-16 | Nitride semiconductor laser |
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|---|---|---|---|
| CN2012100125614A CN102570308A (en) | 2012-01-16 | 2012-01-16 | Nitride semiconductor laser |
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|---|---|
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ID=46415061
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Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104953467A (en) * | 2014-03-27 | 2015-09-30 | 中国科学院苏州纳米技术与纳米仿生研究所 | GaN-based semiconductor laser and manufacturing method thereof |
| CN105048286A (en) * | 2015-09-11 | 2015-11-11 | 厦门市三安光电科技有限公司 | Gallium nitride-based laser diode and preparation method thereof |
| CN105140367A (en) * | 2015-09-29 | 2015-12-09 | 华南师范大学 | GaN-based LED epitaxial structure |
| CN105811243A (en) * | 2016-03-28 | 2016-07-27 | 中国科学院半导体研究所 | Green laser epitaxial wafer of stress control waveguide layer and preparation method thereof |
| CN107069429A (en) * | 2017-07-05 | 2017-08-18 | 长春理工大学 | A kind of composite waveguide epitaxial structure based on semiconductor laser |
| JP2018050021A (en) * | 2015-11-30 | 2018-03-29 | 日亜化学工業株式会社 | Semiconductor laser element and method for manufacturing the same |
| CN109449759A (en) * | 2018-11-16 | 2019-03-08 | 华南师范大学 | The laser and preparation method thereof of Quantum Well absorptivity can be improved |
| CN109964375A (en) * | 2016-11-17 | 2019-07-02 | 欧司朗光电半导体有限公司 | Semiconductor laser |
| CN110165552A (en) * | 2019-06-10 | 2019-08-23 | 厦门乾照半导体科技有限公司 | One kind having high-power VCSEL chip and preparation method thereof |
| CN111697427A (en) * | 2020-06-12 | 2020-09-22 | 东莞理工学院 | Laser diode based on gallium nitride substrate and preparation method thereof |
| CN112398002A (en) * | 2019-08-16 | 2021-02-23 | 山东华光光电子股份有限公司 | Low-power laser based on gradient waveguide layer and preparation method thereof |
| CN113422293A (en) * | 2021-06-21 | 2021-09-21 | 中国科学院半导体研究所 | InGaN/GaN quantum well laser with stepped upper waveguide and preparation method thereof |
| CN114094443A (en) * | 2022-01-21 | 2022-02-25 | 苏州长光华芯光电技术股份有限公司 | High-strain semiconductor structure and preparation method thereof |
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Cited By (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104953467B (en) * | 2014-03-27 | 2019-02-12 | 杭州增益光电科技有限公司 | A kind of gallium nitride base semiconductor laser and preparation method thereof |
| CN104953467A (en) * | 2014-03-27 | 2015-09-30 | 中国科学院苏州纳米技术与纳米仿生研究所 | GaN-based semiconductor laser and manufacturing method thereof |
| CN105048286A (en) * | 2015-09-11 | 2015-11-11 | 厦门市三安光电科技有限公司 | Gallium nitride-based laser diode and preparation method thereof |
| CN105140367A (en) * | 2015-09-29 | 2015-12-09 | 华南师范大学 | GaN-based LED epitaxial structure |
| CN105140367B (en) * | 2015-09-29 | 2018-03-09 | 华南师范大学 | A kind of GaN base LED epitaxial structure |
| JP2018050021A (en) * | 2015-11-30 | 2018-03-29 | 日亜化学工業株式会社 | Semiconductor laser element and method for manufacturing the same |
| CN105811243A (en) * | 2016-03-28 | 2016-07-27 | 中国科学院半导体研究所 | Green laser epitaxial wafer of stress control waveguide layer and preparation method thereof |
| CN105811243B (en) * | 2016-03-28 | 2018-10-26 | 中国科学院半导体研究所 | Stress regulation and control ducting layer green (light) laser epitaxial wafer and preparation method thereof |
| CN109964375A (en) * | 2016-11-17 | 2019-07-02 | 欧司朗光电半导体有限公司 | Semiconductor laser |
| US10826276B2 (en) | 2016-11-17 | 2020-11-03 | Osram Oled Gmbh | Semiconductor laser |
| CN109964375B (en) * | 2016-11-17 | 2023-02-28 | 欧司朗光电半导体有限公司 | Semiconductor laser device |
| CN107069429A (en) * | 2017-07-05 | 2017-08-18 | 长春理工大学 | A kind of composite waveguide epitaxial structure based on semiconductor laser |
| CN109449759A (en) * | 2018-11-16 | 2019-03-08 | 华南师范大学 | The laser and preparation method thereof of Quantum Well absorptivity can be improved |
| CN110165552A (en) * | 2019-06-10 | 2019-08-23 | 厦门乾照半导体科技有限公司 | One kind having high-power VCSEL chip and preparation method thereof |
| CN112398002A (en) * | 2019-08-16 | 2021-02-23 | 山东华光光电子股份有限公司 | Low-power laser based on gradient waveguide layer and preparation method thereof |
| CN112398002B (en) * | 2019-08-16 | 2021-10-01 | 山东华光光电子股份有限公司 | Low-power laser based on gradient waveguide layer and preparation method thereof |
| CN111697427A (en) * | 2020-06-12 | 2020-09-22 | 东莞理工学院 | Laser diode based on gallium nitride substrate and preparation method thereof |
| CN111697427B (en) * | 2020-06-12 | 2021-11-23 | 东莞理工学院 | Laser diode based on gallium nitride substrate and preparation method thereof |
| CN113422293A (en) * | 2021-06-21 | 2021-09-21 | 中国科学院半导体研究所 | InGaN/GaN quantum well laser with stepped upper waveguide and preparation method thereof |
| CN114094443A (en) * | 2022-01-21 | 2022-02-25 | 苏州长光华芯光电技术股份有限公司 | High-strain semiconductor structure and preparation method thereof |
| CN114094443B (en) * | 2022-01-21 | 2022-04-12 | 苏州长光华芯光电技术股份有限公司 | High-strain semiconductor structure and preparation method thereof |
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Application publication date: 20120711 |