CN102569422B - A kind of Schottky rectifying device and manufacture method - Google Patents
A kind of Schottky rectifying device and manufacture method Download PDFInfo
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- CN102569422B CN102569422B CN201010622193.6A CN201010622193A CN102569422B CN 102569422 B CN102569422 B CN 102569422B CN 201010622193 A CN201010622193 A CN 201010622193A CN 102569422 B CN102569422 B CN 102569422B
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Abstract
The invention belongs to rectifying device field, in particular to a kind of Trench schottky rectifier part, this device comprises: be followed successively by from the bottom to top: cathodic metal, the first conduction type cathode layer, the first conduction type substrate, the first conductive type epitaxial layer, barrier metal; And be positioned at the extra-regional silicon dioxide layer of barrier metal on epitaxial loayer; Described epitaxial loayer has one at least by the groove of its surface to downward-extension, and groove is positioned under the silicon dioxide layer on epitaxial loayer, is provided with packed layer in described groove; At least one sidewall of groove is outward-dipping, is more than or equal to 10 degree with the angle of epitaxial loayer horizontal plane, is less than or equal to 45 degree; This Schottky rectifying device has extenuated the concentrations of electromotive force effectively, improves the reverse breakdown voltage of device; The invention also discloses a kind of manufacture method of Schottky rectifying device in addition.
Description
Technical field
The present invention relates to semiconductor device, particularly a kind of Schottky rectification tube device and manufacture method.
Background technology
Electronic components of high power such as power rectifier and power switch are widely used in every field, such as Switching Power Supply, automotive electronics, radio communication Electric Machine Control.For a long time, people use Si power device always, but along with the years development of silicon technology, corresponding Si power device performance moves closer to theoretical limit, want significantly boost device performance, break through the Limits properties of Si power device, just must adopt new semi-conducting material, especially III-family nitrogen compound semiconductor SIC, new material fundamental characteristics has the great potential of the more high performance power electronic device of manufacture.Wherein, gallium nitride is as the Typical Representative of wide bandgap semiconductor, extensive concern is subject in the world with its energy gap large (3.4EV), breakdown electric field high (3.3MV/CM), saturated electrons drift velocity large (2.8E7CM/S) and the high many-sided performance advantage of thermal conductivity, relevant nitride-based semiconductor technical development is rapid, GAN basic material has good prospect at high-frequency and high-voltage and high power device application, and its figure of merit for power electronic device exceeds an order of magnitude compared to silicon materials or GaAs basic material.
Based in the power device of semiconductor material with wide forbidden band, GAN Schottky Rectifier becomes international focus in recent years, and it has high-breakdown-voltage simultaneously multiple, the excellent characteristics such as low opening resistor and very little reverse recovery time.As the most basic a kind of power electronic device, GAN Schottky Rectifier is applied to circuit for power conversion or module, the energy conversion efficiency of system can be improved largely.And greatly simplify the complexity of circuit, reduce preparation cost.
At present, people pass through at sapphire, carborundum, silicon base successfully produces Schottky Rectifier by epitaxy method, but further developing of this technology also faces a major issue, that is exactly, it is so high that the reverse breakdown voltage of present Schottky Rectifier does not have theory, and an important indicator of reverse breakdown voltage Schottky Rectifier exactly, in theory, its puncture voltage is due to the collide ionization and cause avalanche breakdown determine of the charge carrier in active area in device under the effect of highfield.But, in the world, the reverse breakdown voltage of the gallium nitride schottky rectifying tube that each research institution or company report can only reach theoretical 30-50%, the not high basic reason of puncture voltage is caused to be that electric field is crowded, specifically, Schottky Rectifier is when reverse bias, the electric field distribution in the horizontal direction of depletion region is not uniform, the closer to electrode edge, power line is closeer, in the depletion layer of Schottky electrode edge, just there will be the maximum of electric field like this, avalanche breakdown is occurred herein ahead of time.This effect causes the GAN Schottky power device institute performance advantage such as due high-breakdown-voltage and large power output all can not give full play to; Reverse leakage current also can be bigger than normal simultaneously, causes device reliability to be deteriorated.
As shown in figure 11, be existing Schottky Rectifier, it comprises: cathodic metal, N+ cathode layer, N-type substrate, N-epitaxial loayer, barrier metal; And be positioned at the extra-regional silicon dioxide layer of barrier metal on epitaxial loayer; Described epitaxial loayer has two by the groove of its surface to downward-extension, but groove adopts rectangle groove, Figure 13 is for being its electric power gear analogous diagram, can see that the electric power gear line that its trench corner place electric field is formed is too concentrated as can be seen from Fig., cause Schottky reverse breakdown voltage low, greatly affect the performance of Schottky rectifying device.
Summary of the invention
Crowded in order to solve device internal field, improve the reverse breakdown voltage of device, improve the reliability of device, the present invention proposes the rectifying device of a kind of channel schottky contact.
The technical scheme that the present invention solves the employing of existing Schottky Rectifier technical problem is:
A kind of Schottky rectifying device, this device comprises: be followed successively by from the bottom to top: cathodic metal, the first conduction type cathode layer, the first conduction type substrate, the first conductive type epitaxial layer, barrier metal; And be positioned at the extra-regional silicon dioxide layer of barrier metal on epitaxial loayer; The first described conductive type epitaxial layer has one at least by the groove of its surface to downward-extension, and described groove is positioned under the silicon dioxide layer on epitaxial loayer, is provided with packed layer in described groove; At least one sidewall of groove is outward-dipping, is greater than or equal to 10 degree with the angle of epitaxial loayer horizontal plane, is less than or equal to 45 degree.
Further, the first conductive type epitaxial layer described in Schottky rectifying device of the present invention comprises the first doping content epitaxial loayer and the second doping content epitaxial loayer, second doping content epitaxial loayer is positioned on the first doping content epitaxial loayer, and the concentration of the first doping content epitaxial loayer is 1E16/CM
3~ 3E16/CM
3, the concentration of the second doping content epitaxial loayer is 1E15/CM
3~ 5E15/CM
3.
Further, the gash depth described in Schottky rectifying device of the present invention is greater than Schottky junction depth, and gash depth is about 1um ~ 6um, and Schottky junction depth is 1um ~ 3um.
Further, the packed layer described in Schottky rectifying device of the present invention is polysilicon and silicon dioxide.
Further, also comprise the first conductive type buffer layer between substrate and epitaxial loayer in Schottky rectifying device of the present invention, buffer layer thickness is 200nm.
Further, the first conduction type described in Schottky rectifying device of the present invention is N-type.
The invention also discloses the manufacture method of Schottky rectifying device, comprise following step:
Step (1) forms the first conduction type substrate;
Step (2) forms the first conductive type epitaxial layer on the first conduction type substrate;
Further, the manufacture method of Schottky rectifying device disclosed by the invention, is also included between step (1) and step (2) and increases one deck first conductive type buffer layer.
Further, the first conduction type is N-type; N-type epitaxy layer comprises the first doping content epitaxial loayer and the second doping content epitaxial loayer, and the second doping content epitaxial loayer is positioned on the first doping content epitaxial loayer, and the doping content of the first doping content epitaxial loayer is 1E16/CM
3~ 3E16/CM
3, the doping content of the second doping content epitaxial loayer is 1E15/CM
3~ 5E15/CM
3.
Step (3) forms outward-dipping groove in the first conductive type epitaxial layer, and the angle of trenched side-wall and epitaxial loayer horizontal plane is more than or equal to 10 degree, is less than or equal to 45 degree;
Further, groove forms groove figure by exposure, development more first generate layer of silicon dioxide layer on epitaxial loayer after, then etch pattern forms groove.
Step (4) forms packed layer in groove;
Further, the packed layer in groove is polysilicon and silicon dioxide.
Step (5) forms silicon dioxide layer on groove;
Further, the growth of silicon dioxide layer adopts thermal oxide growth, and the thickness of silicon dioxide layer is 1000-4000
Step (6) trench region on epitaxial loayer forms barrier metal outward;
Further, metal level is the silicon dioxide removed on epitaxial loayer outside trench region and generates, and metal is gold, silver, aluminium, platinum etc., and metal adopts sputtering or steams and crosses generation.
Step (7) forms the first conduction type type cathode layer under semiconductor base;
Further, the first conduction type is N-type, and N-type cathode layer forms the negative pole district of Schottky rectifying device, and the doping content of N-type cathode layer is 1E17/CM
3.
Step (8) forms contact electrode on cathode layer.
Technique effect: groove and side, the active area faying face of Schottky rectifying device of the present invention are inclined-plane, the angle of trenched side-wall and epitaxial loayer horizontal plane is greater than or equal to 10 degree, being less than or equal to 45 degree of valley gutter structures, to solve internal electric field crowded, improve the reverse breakdown voltage of Schottky rectifying device, closely ideal breakdown voltage.
Accompanying drawing explanation
Fig. 1, the Schottky rectifying device structural representation that the embodiment of the present invention provides;
Fig. 2-10, the Schottky rectifying device manufacturing flow chart that the embodiment of the present invention provides;
Figure 11, existing rectangle groove Schottky rectifying device figure;
Figure 12, the Schottky rectifying device electric power gear analogous diagram that the embodiment of the present invention provides;
Figure 13, the electric power gear analogous diagram of existing rectangle groove Schottky rectifying device;
Reference numeral: 1, the first conduction type substrate; 2, the first conductive type buffer layer; 3, the first conduction type first doping content epitaxial loayer; 4, the first conduction type second doping content epitaxial loayer; 5 silicon dioxide; 6, silicon dioxide layer; 7, barrier metal; 8, the first conduction type cathode layer; 9, cathodic metal; 10, polysilicon; Angle formed by A, epitaxial loayer horizontal plane and trenched side-wall.
Embodiment
In order to enable engineering staff have a clear understanding of technical scheme of the present invention, be described below in conjunction with drawings and Examples, the present invention should not be limited to and use following embodiment to realize.
The rectifying device of the embodiment of the present invention is GAN Schottky rectifying device.
Embodiment one
As shown in Figure 1, for GAN Schottky rectifying device preferred embodiment of the present invention, this device comprises: be followed successively by from the bottom to top: cathodic metal 9, N+ cathode layer 8, N-type substrate 1, resilient coating 2, N-type first doping content epitaxial loayer 3, N-type second doping content epitaxial loayer 4, barrier metal 7; And be positioned at the extra-regional silicon dioxide layer 6 of barrier metal on epitaxial loayer, described epitaxial loayer has one at least by the groove of its surface to downward-extension, groove is positioned under the silicon dioxide layer on epitaxial loayer, be provided with packed layer in described groove, described groove and side, active area faying face are inclined-plane; Trenched side-wall is outward-dipping, is 30 degree with epitaxial loayer horizontal plane angulation A.
Below to further describing as in the embodiment shown in fig. 1:
In the present embodiment, cathodic metal 9 can be iron, aluminium and copper, also comprises some other metal, and the preferred cathodic metal of the present embodiment is copper, is positioned at N+ cathode layer 8 on cathodic metal 9 and cathodic metal constitutes negative electrode, and the doping content of N+ cathode layer 8 is 1E17/CM
3, that be positioned at the N-type substrate 1 on cathode layer is 3E18/CM
3.
Be positioned at the resilient coating 2 on substrate 1 in the embodiment of the present invention, its concentration is 1E17/CM
3, its thickness is 200nm, and resilient coating efficiently reduces the stress that outer layer growth causes substrate.
The epitaxial loayer be positioned in the embodiment of the present invention on resilient coating 2 comprises epitaxial loayer 3 and epitaxial loayer 4, its epitaxial layers 3 is the first doping content epitaxial loayer, epitaxial loayer 4 is the second doping content epitaxial loayer, second doping content epitaxial loayer is positioned on the first doping content epitaxial loayer, and the doping content of epitaxial loayer 3 is preferably 2E16/CM
3, the doping content of epitaxial loayer 4 is 3E15/CM
3, the conducting resistance effectively reducing device of the second doping content epitaxial loayer and the first doping content epitaxial loayer, improves the puncture voltage of device simultaneously,
The groove extended to form downwards by epi-layer surface in the embodiment of the present invention and side, active area faying face are inclined-plane, groove is two, gash depth (4um) is greater than Schottky junction depth (2um), and the angle A of trenched side-wall and epitaxial loayer floor level is 30 degree; Be provided with packed layer in groove as we can see from the figure, packed layer is polysilicon 10, silicon dioxide 5.
The silicon dioxide layer 6 being arranged in groove upper surface in the embodiment of the present invention plays isolation and barrier effect in barrier metal sputtering or steaming transient, stops extraneous impurity simultaneously, eliminates the performance that impurity destroys rectifying device of the present invention.
In the embodiment of the present invention, barrier metal 7 to be positioned on epitaxial loayer outside trench region, barrier metal and epitaxial loayer form Schottky contacts, and barrier metal is generally gold, silver and platinum, aluminium, due to golden cost reasons, the most frequently used is silver, platinum and aluminium, and the preferred barrier metal of the present embodiment is aluminium.
30 degree are become with the angle A of epitaxial loayer horizontal plane, under the reverse biased at Schottky rectifying device two ends is the condition of 400V at the trenched side-wall of embodiment of the present invention channel form Schottky rectifying device, obtain the electric power gear analogous diagram of Schottky rectifying device as shown in figure 12, the electric power gear line of Schottky rectifying device that the present embodiment is formed as seen from the figure distributes in the corner of groove.
Shown in Figure 11 is prior art rectangle groove Schottky rectifying device figure, obtains electric power gear line analogous diagram as shown in fig. 13 that when its two ends add reverse voltage same with Schottky rectifying device of the present invention.
Emulate compared with Figure 12 emulates Figure 13 with the electric power gear of existing Schottky rectifying device by the electric power gear of the embodiment of the present invention, can find out that the electric power gear line of the embodiment of the present invention becomes mild and sparse at trench corner place, effectively extenuate Schottky rectifying device electromotive force concentrations around the corner, improve the puncture voltage of device.
Principles illustrated: the size of the density degree reflection electric field strength of electric power gear line, electric field strength size reflection device electric breakdown strength; Electric power gear line is closeer, and electric field strength is larger, and device more easily punctures, for the present invention, the Schottky contacts of existing plane is become the Schottky contacts of trapezoid-shaped trench slot type, make the electric power gear line at trench corner place become sparse, and then electric field strength reduces, puncture voltage raises.
Below embodiment of the present invention Schottky rectifying device manufacturing process is described:
Fig. 2-10 is depicted as the manufacturing flow chart of embodiment of the present invention Schottky rectifying device, and it comprises the following steps:
Step one, form the first conduction type substrate 1;
Be illustrated in figure 2 substrate, the doping content of substrate 1 is 3E18/CM
3.
Step 2, on semiconductor base, form resilient coating 2;
As shown in Figure 3, this step is the resilient coating 2 increased in the present embodiment, and its doping content is 1E17/CM
3, its thickness is 200nm, and the increase of resilient coating reduces in epitaxial process effectively to the stress that substrate causes.
Step 3, on resilient coating, form epitaxial loayer;
As shown in Figure 4, have employed the growth mechanism grown epitaxial layer of vapour phase epitaxy, epitaxial loayer comprises epitaxial loayer 3 and epitaxial loayer 4, and first grow the first doping content epitaxial loayer 3, its doping content is preferably 2E16/CM
3, then grow the second doping content epitaxial loayer 4, its doping content is 3E15/CM
3
Step 4, forms outward-dipping groove in epitaxial loayer, and the angle of trenched side-wall and epitaxial loayer horizontal plane is 30 degree;
As shown in Figure 5, the groove in this step after first growing silicon dioxide layer on epitaxial loayer is mask layer again with silicon dioxide layer, exposed the upper surface of the groove of needs corrosion, corrode form groove with corrosive liquid by waterfall light, development.
Step 5, in groove, form packed layer;
As shown in Figure 6, in groove, packed layer is polysilicon 10 and silicon dioxide 5.
Step 6, on groove, grow silicon dioxide layer;
As shown in Figure 7, the growth of the silicon dioxide layer 6 generated in this step adopts thermal oxide growth, and its thickness is 1000-4000
Step 7, trench region on epitaxial loayer form metal level outward;
As shown in Figure 8; in this step, metal level is after removing the silicon dioxide layer on epitaxial loayer outside trench region; have employed in physical vapor deposition to steam and cross and sputter two kinds of modes and form barrier metal; barrier metal is aluminium; the formation temperature of barrier metal is about 110 degree, high annealing after nitrogen protection.
Step 8, under semiconductor base, manufacture N-type cathode layer;
As shown in Figure 9, in N-type substrate lower surface growth N-type cathode layer 8, it and cathodic metal form ohmic contact and form negative electrode.
Step 9, on cathode layer, form contact electrode;
As shown in Figure 10, this step is the preparation of electrode, carries out high annealing after having prepared.
When without departing from the spirit and scope of the present invention, the embodiment of many very big differences can also be formed, the invention is not restricted to specific embodiment described in the description.
Claims (13)
1. a Schottky rectifying device, is characterized in that, this device comprises: be followed successively by from the bottom to top: cathodic metal, the first conduction type cathode layer, the first conduction type substrate, the first conductive type epitaxial layer, barrier metal; And be positioned at the extra-regional silicon dioxide layer of barrier metal on epitaxial loayer; Described epitaxial loayer has one at least by the groove of its surface to downward-extension, and groove is positioned under the silicon dioxide layer on epitaxial loayer, is provided with packed layer in described groove; At least one sidewall of groove is outward-dipping, is more than or equal to 10 degree with the angle of epitaxial loayer horizontal plane, is less than or equal to 45 degree, and the packed layer in described groove is polysilicon and silicon dioxide.
2. Schottky rectifying device according to claim 1, it is characterized in that: the first described conductive type epitaxial layer comprises the first doping content epitaxial loayer and the second doping content epitaxial loayer, second doping content epitaxial loayer is positioned on the first doping content epitaxial loayer, and the first doping content is greater than the second doping content.
3. Schottky rectifying device according to claim 2, is characterized in that: the doping content of the first conduction type first doping content epitaxial loayer is 1E16/CM3 ~ 3E16/CM3.
4. Schottky rectifying device according to claim 2, is characterized in that: the doping content of the first conduction type second doping content epitaxial loayer is 1E15/CM3 ~ 5E15/CM3.
5. Schottky rectifying device according to claim 1, is characterized in that: described gash depth is greater than Schottky junction depth.
6. Schottky rectifying device according to claim 5, is characterized in that: described gash depth is 1um ~ 6um, and Schottky junction depth is 1um ~ 3um.
7. Schottky rectifying device according to claim 1, is characterized in that: also comprise the first conductive type buffer layer between the first conduction type substrate and the first conductive type epitaxial layer.
8. the Schottky rectifying device according to claim 1-7 any one, is characterized in that: the first described conduction type is N-type.
9. a manufacture method for Schottky rectifying device, is characterized in that, comprises following step:
A () forms the first conduction type substrate;
B () forms the first conductive type epitaxial layer on the first conduction type substrate;
C () forms outward-dipping groove in the first conductive type epitaxial layer, the angle of trenched side-wall and epitaxial loayer horizontal plane is more than or equal to 10 degree, is less than or equal to 45 degree;
D () forms packed layer in groove;
E () forms silicon dioxide layer on groove;
F () trench region on the first conductive type epitaxial layer forms barrier metal outward;
G () forms the first conduction type cathode layer under the first conduction type substrate;
H () forms contact electrode on cathode layer;
Packed layer in groove described in step (d) is polysilicon and silicon dioxide.
10. the manufacture method of a kind of Schottky rectifying device according to claim 9, it is characterized in that, groove in described step (c) first forms layer of silicon dioxide layer in epi-layer surface, then form groove figure by exposure, development, then etch pattern forms groove.
The manufacture method of 11. a kind of Schottky rectifying devices according to claim 9, is characterized in that, further comprising the steps of: between step (a) and step (b), increase one deck first conductive type buffer layer.
The manufacture method of 12. a kind of Schottky rectifying devices according to claim 11, it is characterized in that, further comprising the steps of: first to grow the first conduction type first doping content epitaxial loayer on the buffer layer, on the first doping content epitaxial loayer, then grow the first conduction type second doping content epitaxial loayer.
The manufacture method of 13. a kind of Schottky rectifying devices according to claim 9-12 any one, it is characterized in that, the first described conduction type is N-type.
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| CN103325846B (en) * | 2013-06-19 | 2015-09-16 | 张家港凯思半导体有限公司 | A kind of manufacture method of valley gutter Schottky barrier rectification element |
| CN104576362A (en) * | 2014-12-08 | 2015-04-29 | 天水天光半导体有限责任公司 | Fabrication process of 100V Schottky diode |
| CN114566553B (en) * | 2022-02-21 | 2022-10-14 | 先之科半导体科技(东莞)有限公司 | High-power breakdown-preventing Schottky diode |
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Address after: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee after: BYD Semiconductor Co.,Ltd. Address before: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee before: BYD Semiconductor Co.,Ltd. Address after: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee after: BYD Semiconductor Co.,Ltd. Address before: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee before: SHENZHEN BYD MICROELECTRONICS Co.,Ltd. |