CN102569020A - 一种8英寸晶圆切口氧化膜去除方法和装置 - Google Patents
一种8英寸晶圆切口氧化膜去除方法和装置 Download PDFInfo
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- CN102569020A CN102569020A CN2010105972425A CN201010597242A CN102569020A CN 102569020 A CN102569020 A CN 102569020A CN 2010105972425 A CN2010105972425 A CN 2010105972425A CN 201010597242 A CN201010597242 A CN 201010597242A CN 102569020 A CN102569020 A CN 102569020A
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- 238000000034 method Methods 0.000 title claims abstract description 23
- 235000012431 wafers Nutrition 0.000 title abstract 7
- 230000003647 oxidation Effects 0.000 title abstract 4
- 238000007254 oxidation reaction Methods 0.000 title abstract 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 32
- 239000002253 acid Substances 0.000 claims abstract description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 20
- 239000010703 silicon Substances 0.000 claims abstract description 20
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 16
- 238000005260 corrosion Methods 0.000 claims description 13
- 230000007797 corrosion Effects 0.000 claims description 13
- 239000004744 fabric Substances 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 3
- 230000000630 rising effect Effects 0.000 claims 1
- 238000005530 etching Methods 0.000 abstract 2
- 238000009966 trimming Methods 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000007689 inspection Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000035484 reaction time Effects 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
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CN201010597242.5A CN102569020B (zh) | 2010-12-10 | 2010-12-10 | 一种8英寸晶圆切口氧化膜去除方法和装置 |
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CN201010597242.5A CN102569020B (zh) | 2010-12-10 | 2010-12-10 | 一种8英寸晶圆切口氧化膜去除方法和装置 |
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CN102569020A true CN102569020A (zh) | 2012-07-11 |
CN102569020B CN102569020B (zh) | 2015-01-14 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103065935A (zh) * | 2012-12-03 | 2013-04-24 | 天津中环领先材料技术有限公司 | 一种采用挤压方式去除igbt用硅晶圆抛光片边缘氧化膜的方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1753154A (zh) * | 2004-09-23 | 2006-03-29 | 北京有色金属研究总院 | 一种晶圆氧化膜边缘的去除方法及装置 |
CN1777980A (zh) * | 2003-04-22 | 2006-05-24 | 东京毅力科创株式会社 | 硅氧化膜的去除方法及处理装置 |
CN101339901A (zh) * | 2007-07-02 | 2009-01-07 | 北京有色金属研究总院 | 一种晶圆表面氧化膜去除工艺和装置 |
US20090320885A1 (en) * | 2008-06-27 | 2009-12-31 | Kazuki Inoue | Substrate treatment apparatus |
CN201910408U (zh) * | 2010-12-10 | 2011-07-27 | 北京有色金属研究总院 | 一种8英寸晶圆切口氧化膜去除装置 |
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2010
- 2010-12-10 CN CN201010597242.5A patent/CN102569020B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1777980A (zh) * | 2003-04-22 | 2006-05-24 | 东京毅力科创株式会社 | 硅氧化膜的去除方法及处理装置 |
CN1753154A (zh) * | 2004-09-23 | 2006-03-29 | 北京有色金属研究总院 | 一种晶圆氧化膜边缘的去除方法及装置 |
CN101339901A (zh) * | 2007-07-02 | 2009-01-07 | 北京有色金属研究总院 | 一种晶圆表面氧化膜去除工艺和装置 |
US20090320885A1 (en) * | 2008-06-27 | 2009-12-31 | Kazuki Inoue | Substrate treatment apparatus |
CN201910408U (zh) * | 2010-12-10 | 2011-07-27 | 北京有色金属研究总院 | 一种8英寸晶圆切口氧化膜去除装置 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103065935A (zh) * | 2012-12-03 | 2013-04-24 | 天津中环领先材料技术有限公司 | 一种采用挤压方式去除igbt用硅晶圆抛光片边缘氧化膜的方法 |
CN103065935B (zh) * | 2012-12-03 | 2015-02-04 | 天津中环领先材料技术有限公司 | 一种采用挤压方式去除igbt用硅晶圆抛光片边缘氧化膜的方法 |
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CN102569020B (zh) | 2015-01-14 |
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Address after: 101300 south side of Shuanghe Road, Linhe Industrial Development Zone, Shunyi District, Beijing Patentee after: Youyan semiconductor silicon materials Co.,Ltd. Address before: 101300 south side of Shuanghe Road, Linhe Industrial Development Zone, Shunyi District, Beijing Patentee before: GRINM SEMICONDUCTOR MATERIALS Co.,Ltd. |
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