CN102565069A - Infrared microscopic non-destructive detector for integrated circuit - Google Patents
Infrared microscopic non-destructive detector for integrated circuit Download PDFInfo
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- CN102565069A CN102565069A CN2011104340808A CN201110434080A CN102565069A CN 102565069 A CN102565069 A CN 102565069A CN 2011104340808 A CN2011104340808 A CN 2011104340808A CN 201110434080 A CN201110434080 A CN 201110434080A CN 102565069 A CN102565069 A CN 102565069A
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Abstract
The invention discloses an infrared microscopic non-destructive detector for an integrated circuit and belongs to the technical field of non-contact infrared microscopic non-destructive detection and infrared image processing. The detector comprises three processing modules, namely an infrared thermal radiation acquisition module, an infrared microscopic thermal image acquisition module and an infrared thermal image pre-processing module. The three processing modules respectively comprise the integrated circuit which serves as a radiation source, an infrared collimation lens group, a rectangular diaphragm, an infrared microscope lens array, an imaging lens, a high-resolution thermal infrared imager and a computer. A microscope lens array is designed, array type microscope lenses are employed, a single lens of an array can acquire the radiation information of each area of the integrated circuit and can extract detailed infrared radiation information in the integrated circuit in an area dividing mode, the detailed radiation information can be imaged on the high-resolution thermal infrared imager, radiation distribution in the integrated circuit can be obtained by per-processing an image through the computer, and non-destructive defect detection of a large-scale integrated circuit can be finished.
Description
Technical field
The invention belongs to contactless infrared microscopy Non-Destructive Testing and infrared image processing technical field, particularly a kind of infrared microscopy nondestructive testing instrument that can carry out the fault zone diagnosis to large scale integrated circuit.
Background technology
The lossless detection method of integrated circuit fault diagnosis and wire bonds quality is the problem that everybody was concerned about always.The method of the defective of tradition inspection both at home and abroad is to try hard to recommend (or drawing) moving test and local pin energising test with machinery at present; But it incompatibility I/O end points reach more than the hundreds of; Lead spacing is less than the detection of the leads of IC welding quality of 0.1mm; And detect to destructive, weak point is obvious.Especially its integrated unusual height of present integrated circuit, inner density of components is very big and pin is tightr.
In existing technical method, there is a kind of Scanning Laser Acoustic Microscope (being called for short SLAM) to can be used as a kind of ultrasonic non-destructive inspection techniques; Owing to can provide the sound micro-image of testee inner structure; The mechanical elasticity parameter distribution that reflects testee can be found the integrated circuit welding quality defects in some simulation tests.But in actual measurement, need select to close conditions such as the sound wave incident angle made, acoustic transducer power input according to measurand, detect requirement to satisfy, the situation that also exists defect image to lose efficacy in the practical application.
Summary of the invention
To the deficiency and the limitation of prior art in the background technology, the present invention proposes a kind of new type integrated circuit defect diagonsis equipment---integrated circuit infrared microscopy nondestructive testing instrument.
This equipment can distribute through the heat radiation that detects integrated circuit; And the heat radiation DISTRIBUTED REAL-TIME is taken with the array infrared microscopy camera lens of unique design; Obtain the detailed localized heat distribution infrared microscopy image of integrated circuit, find to exist in the integrated circuit the concrete position of defective again through the preconditioning technique of follow-up infrared thermal imagery.
The integrated circuit infrared microscopy nondestructive testing instrument that the present invention proposes comprises three modules: infrared emanation acquisition module, infrared microscopy thermal imagery acquisition module and infrared thermal imagery pre-processing module.The infrared emanation acquisition module begins to comprise from radiation source: integrated circuit to be detected, infrared collimation lens group and rectangular aperture; Infrared microscopy thermal imagery acquisition module comprises: infrared microscopy lens array, imaging len, thermal infrared imager (adopting the high resolving power focal plane array detector) and treatment circuit; The infrared thermal imagery pre-processing module comprises the image storage and handles that the task of infrared thermal imagery pre-processing module is accomplished by computing machine.
Described infrared collimation lens group is made up of two Infrared Lens, and diameter is 102mm, and two lens have identical focal length, and distance be a two focus length between two camera lenses, and infrared radiation is similar to parallel behind collimation.
Described rectangular aperture, the big I real-time regulated of its rectangular opening, the size of coming manually to confirm in real time the hole according to the size of tested integrated circuit.Therefore can guarantee that the information that the back method, system obtains comes from the integrated circuit part.
Described infrared microscopy lens array, novelty have designed radiant quantity and have gathered camera lens, and larger integrated circuit is difficult to single-lens its perfect imaging, can not guarantee form images and carry the integrated circuit information integrity.The infrared microscopy lens array of design is 12 * 12 to distribute, and single little microlens diameter dimension is at 8mm, single-lens tight arrangement; Each regional radiation information of integrated circuit can be obtained respectively by single-lens, can guarantee to obtain detailed area information, and described single microlens is infrared eyeglass; Can receive infrared radiation information; The effective aperture is 79.5mm, and the simple lens spacing is 1mm, and whole array is confirmed actual effectively number by the size of the place ahead rectangular aperture.
Be designed with lens that are used to form images at the rear of infrared microscopy lens array; Imaging len is an Infrared Lens; Lens diameter is 100mm; Can the information integral body that the place ahead microlens array collects be imaged onto on the focal plane at this lens rear, place, the focal plane of this lens back is infrared eye.
Described high resolving power thermal infrared imager, the inner infrared eye that adopts is 640 * 480 focal plane arrays (FPA), can realize high-resolution imaging.
Microlens array, imaging len and infrared eye integrate, and form the infrared imaging module of integrated circuit infrared microscopy nondestructive testing instrument.
Image pre-service in the described infrared thermal imagery pre-processing module comprises: the processing of infrared image gray processing, gray level image smoothing denoising, rim detection, carry out the feature extraction at edge at last, and obtain the marginal information of rejected region.
Advantage of the present invention and good effect: the present invention has designed a kind of microlens array; Novelty ground adopts 12 * 12 array microlens; Form the single camera lens of array and can gather each regional radiation information of integrated circuit respectively, can extract the detailed infrared radiation information of IC interior in the subregion like this.Thermal imaging is carried out in infrared microscopy radiation to integrated circuit; The defect information that can comprise inside circuit in the thermal imagery; After the pre-service of computer picture, can obtain the radiation profiles of IC interior; Fault location has apparent contour difference and embodies, and can accomplish the harmless defects detection of large scale integrated circuit.
Whole testing process can not destroyed original integrated circuit, belongs to the Non-Destructive Testing category.Conveniently can play very big help in commercial production and apparatus guarantee.
Description of drawings
Light path is gathered in the radiation of Fig. 1 detector.
Fig. 2 detector operational module structural drawing.
Fig. 3 principle of work block diagram.
Figure releases: 11 to-be-measured integrated circuit, 12 collimation lens set, 13 rectangular apertures, 14 infrared microscopy lens arras, 15 imaging lens, 16 imaging len focal planes, 17 thermal infrared imagers.
Further specify particular content of the present invention below in conjunction with accompanying drawing.
Embodiment
Embodiment
As depicted in figs. 1 and 2, integrated circuit infrared microscopy nondestructive testing instrument of the present invention comprises three modules: infrared emanation acquisition module, infrared microscopy thermal imagery acquisition module and infrared thermal imagery pre-processing module.The infrared emanation acquisition module begins to comprise from radiation source: integrated circuit to be detected 11, infrared collimation lens group 12 and rectangular aperture 13; Infrared microscopy thermal imagery acquisition module comprises: infrared microscopy lens array 14, imaging len 15, thermal infrared imager 17 (the inner high resolution infrared detector that adopts) and treatment circuit; The infrared thermal imagery pre-processing module comprises the image storage and handles that the task of infrared thermal imagery pre-processing module is accomplished by computing machine.
Detect principle:
Before inspection; To carry out pre-service to integrated chip; Purpose is in order to let the inner circuit of integrated chip produce a real-time difference variation, can to guarantee that like this there is a difference in the heat radiation of normal region and rejected region, and the difference of radiation information can make the imaging effect can be better.Here the method that adopts is local current flow method, selects two pins of Voo and Vcc for use, connects low-tension supply, and magnitude of voltage is lower than the integrated chip rated voltage.The resistance of energising back rejected region can change, and changes in resistance can cause this position heat distribution to change, and is variant with the thermal value meeting of normal region.
Afterwards; The heat radiation of this integrated circuit is successively through the infrared collimation lens group; Infrared radiation is collimated, and through rectangular aperture, the empty size of rectangular aperture can be adjusted according to the physical size of survey integrated circuit automatically behind the collimation; The radiation that assurance sees through comes from integrated chip, gets rid of the interference of extraneous radiation.
Each the regional radiation of infrared microscopy lens array receiving integrate circuit can obtain the more trickle radiation information in each zone.The collection camera lens at lens array rear can be imaged onto the radiation information that receives on the focal plane of lens, i.e. the thermal infrared imager position.
Again, the heat radiation meeting enters on the detector of thermal infrared imager, adopts 640 * 480 high resolution ratio array formula detectors here, realizes the imaging at meticulous position.The heat radiation of integrated circuit can directly arrive above the detector of thermal infrared imager after collimation lens set and infrared microscopy optical system, and radiation information is formed images after treatment, forms the radiated infrared thermography of integrated circuit and carries out the storage of image.
Thermal imagery can be kept in the memory module, and image stored is called through computing machine can carry out the pre-service of image, and the pre-processing module of image comprises: the processing of infrared image gray processing, gray level image smoothing denoising, rim detection.Carry out the feature extraction at edge at last, obtain the fault location marginal information.Thermographic processing procedure is following:
Adopt method of weighted mean to obtain gray level image,, three components of image RGB are carried out weighted mean with different weights according to importance and other index.Here adopt f (i, j)=0.299R (i, j)+0.587G (i, j)+(i j) realizes the weighting of each component to 0.114B; Adopt the smoothing denoising of neighborhood averaging realization gray level image, replace the gray scale of each pixel with the mean value of several pixel grey scales; Adopt the Canny operator to carry out edge of image and detect, extract the edge of continuous whole.The edge of inside circuit defective can be complete detect.
Set the method for global threshold through manual work image is carried out binary conversion treatment, the gray-scale value of the point on the image is made as 0 or 255, just entire image is demonstrated tangible black and white effect.Because object generally shows not on gray-scale value (different such as texture) with the difference of background, therefore can this distinction be converted into the difference of gray scale, utilize previous preset threshold to cut apart this image then.
Because the marginal information of fault location can be clearly; Therefore need not to relate to the fusion matching problem of infrared image; After the pre-service of a series of images, just can obtain the heat distribution situation of IC interior, just can find integrated circuit to have the place of defective according to the edge difference in different distributions district.
Concrete testing process
At first before inspection, integrated chip is carried out pre-service, the method that adopts here is local current flow method, selects then Voo and two pins of Vcc, connects low-tension supply, and magnitude of voltage is lower than the integrated chip rated voltage, and rated voltage can obtain according to the parameter of integrated circuit.The resistance value of energising back rejected region can change, and the variation of resistance and the thermal effect of resistance can cause this position heat distribution to change, and is variant with the thermal value meeting of normal region.The inner circuit of integrated chip produces a real-time difference variation, guarantees that there is a difference in the heat radiation of normal region and rejected region, and the difference of radiation information can make imaging effect better.
After the energising, each module of the radiation information of integrated circuit meeting single pass detector, as shown in Figure 1, successively through infrared collimation lens group 12, rectangular aperture 13, infrared microscopy lens array 14, imaging len 15, infrared optics imaging system 17.
The heat radiation of integrated circuit at first through infrared collimation lens group 12, collimates to infrared radiation, and general radiation all is from all directions, behind collimation, can more effectively utilize radiation information.
Through rectangular aperture 13, the size of rectangular aperture area can be come manual adjustment according to the physical size of survey integrated circuit, makes subsequent optical path only collect the radiation that comes from integrated chip, gets rid of the interference of extraneous radiation behind the collimation.
Behind diaphragm, radiation arrives infrared microscope head array 14, each array point corresponding one less single-lens, each tiny lens can independently be gathered the micro-radiation information of integrated circuit.The radiation information that the collection camera lens 15 at lens array rear can receive the place ahead lens array is imaged onto on its focal plane, i.e. infrared eye 17 positions.
Detector receives the radiation information that the place ahead collection optical system arrives, and transfers radiation information to infrared thermal imagery through corresponding treatment circuit, remembers the infrared microscopy radiation heat picture of integrated circuit.This can record the internal radiation information of integrated circuit above image, image stores storage unit into, and is as shown in Figure 2.
Heat radiation image in the memory module is through Computer Processing, and the image that obtains can demonstrate this IC interior and whether have defective.If there is defective, image after the processing and former basic circuit relatively can find to occur the particular location of rejected region, with this result who obtains detecting.
Claims (8)
1. an integrated circuit infrared microscopy nondestructive testing instrument is characterized in that this detector comprises three modules: infrared emanation acquisition module, infrared microscopy thermal imagery acquisition module and infrared thermal imagery pre-processing module; The infrared emanation acquisition module begins to comprise from radiation source: integrated circuit to be detected, infrared collimation lens group and rectangular aperture; Infrared microscopy thermal imagery acquisition module comprises: infrared microscopy lens array, imaging len, thermal infrared imager and treatment circuit; The infrared thermal imagery pre-processing module comprises the image storage and handles that the task of infrared thermal imagery pre-processing module is accomplished by computing machine.
2. integrated circuit infrared microscopy nondestructive testing instrument according to claim 1; It is characterized in that described infrared collimation lens group is made up of two Infrared Lens, diameter is 102mm, and two lens have identical focal length; And distance is a two focus length between two camera lenses, and infrared radiation is parallel behind collimation.
3. integrated circuit infrared microscopy nondestructive testing instrument according to claim 1 is characterized in that the big I real-time regulated of described rectangular aperture rectangular opening, the size of manually confirming in real time the hole according to the size of tested integrated circuit.Therefore can guarantee that the information that the back method, system obtains comes from the integrated circuit part.
4. integrated circuit infrared microscopy nondestructive testing instrument according to claim 1 is characterized in that described infrared microscopy lens array is that 12 * 12 tiny lens distribute, and single little microlens is designed and sized to 8mm; Single-lens tight arrangement; Each regional radiation information of integrated circuit can be obtained respectively by single-lens, can guarantee to obtain detailed area information, and described single microlens is infrared eyeglass; Can receive infrared radiation information; The effective aperture is 79.5mm, and the simple lens spacing is 1mm, and whole array is confirmed actual effectively number by the size of the place ahead rectangular aperture.
5. integrated circuit infrared microscopy nondestructive testing instrument according to claim 1; It is characterized in that described imaging len is an Infrared Lens; Can the information integral body that the place ahead microlens array collects be imaged onto on the focal plane at this lens rear, the place, focal plane is the detector of thermal infrared imager.
6. integrated circuit infrared microscopy nondestructive testing instrument according to claim 1 is characterized in that described thermal infrared imager, and its inner infrared eye is 640 * 480 focal plane arrays (FPA)s, can realize the high resolving power thermal imaging.
7. integrated circuit infrared microscopy nondestructive testing instrument according to claim 1 is characterized in that microlens array, imaging len and infrared eye integrate, and forms the infrared microscopy thermal imagery acquisition module of integrated circuit infrared microscopy nondestructive testing instrument.
8. integrated circuit infrared microscopy nondestructive testing instrument according to claim 1; It is characterized in that the image pre-service in the described infrared thermal imagery pre-processing module comprises: the processing of infrared image gray processing, gray level image smoothing denoising, rim detection; Carry out the feature extraction at edge at last, obtain the marginal information of rejected region.
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| CN110365915A (en) * | 2019-08-13 | 2019-10-22 | 苏州瑞霏光电科技有限公司 | Array transmission formula micro image collection system |
| CN110988660A (en) * | 2019-10-21 | 2020-04-10 | 信利光电股份有限公司 | ITO defect detection method and system |
| CN111965216A (en) * | 2020-08-22 | 2020-11-20 | 西安交通大学 | LED chip welding layer voidage nondestructive evaluation method based on pulse eddy current infrared |
| CN111998960A (en) * | 2020-09-10 | 2020-11-27 | 昆山大洋电路板有限公司 | Infrared scanning equipment identification method for integrated circuit board |
| CN115046479A (en) * | 2022-08-12 | 2022-09-13 | 杭州纳境科技有限公司 | Superlens detection device and system |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN115046479A (en) * | 2022-08-12 | 2022-09-13 | 杭州纳境科技有限公司 | Superlens detection device and system |
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Application publication date: 20120711 |