CN102559115B - Chip-level bottom filling adhesive and preparation method thereof - Google Patents
Chip-level bottom filling adhesive and preparation method thereof Download PDFInfo
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- CN102559115B CN102559115B CN2011104354124A CN201110435412A CN102559115B CN 102559115 B CN102559115 B CN 102559115B CN 2011104354124 A CN2011104354124 A CN 2011104354124A CN 201110435412 A CN201110435412 A CN 201110435412A CN 102559115 B CN102559115 B CN 102559115B
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Abstract
The invention relates to a chip-level bottom filling adhesive, which comprises following components by weight percentage: 15 to 50 percent of epoxy resin, 1 to 20 percent of toughening agent, 0.1 to 1 percent of dispersing agent, 0.01 to 1 percent of defoaming agent, 0.8 to 10 percent of cross-linking agent, 0.1 to 0.5 percent of pigment, 40 to 70 percent of filler, 3 to 30 percent of curing agent and 1 to 20 percent of diluting agent. A preparation method of the chip-level bottom filling adhesive comprises the steps that the epoxy resin, toughened resin, the dispersing agent, the defoaming agent, the cross-linking agent and the pigment are weighed according to the proportion, thrown into reaction kettle and mixed to form a homogeneous solution; and afterwards, the filler, the curing agent and the diluting agent are weighed according to the proportion, thrown into the reaction kettle in sequence and evenly mixed with the homogeneous solution, and then the chip-level bottom filling adhesive is obtained. The bottom filling adhesive prepared by adopting the method has the characteristics of low curing shrinkage rate, high reliability, and the like, simultaneously satisfies the requirement of low radioactivity and is suitable for primary high-density packaging of memory chips.
Description
Technical field
The present invention relates to a kind of chip-level bottom filling adhesive and preparation method thereof, be applicable to the encapsulation of chip one-level and fill with bottom, belong to the sizing agent field.
Background technology
Along with the fast development of electronic industry, closely-related Electronic Encapsulating Technology is also more and more advanced with it.The Main Trends of The Development intelligent, lightweight, that volume is little, speed is fast, function is strong, good reliability etc. becomes electronic product.For the development that adapts to this trend has produced flip-chip technology.The main advantage of flip-chip comprises can reduce and save space, also has in addition that interconnection vias is shorter and inductance is lower, high I/O density, does over again and the autoregistration ability.Concerning radiating management, the performance of flip-chip is also very outstanding.And underfill is high-density flip-chip BGA, CSP, reach one of crucial electronic material required in the SIP microelectronics Packaging; its Main Function is protection high-density soldered ball node and chip; and BGA, processibility, reliability and the life-time service of CSP and SIP device have been guaranteed.
Current most of underfill all exists cure shrinkage high, the shortcomings such as reliability is low, be only applicable to the secondary encapsulation, uranium content is higher simultaneously, generally at 1～10PPb, can not meet the requirement of low-activity (being that uranium content is less than 1PPb), not be suitable for the one-level high density packing of memory chip.
Summary of the invention
The present invention is directed to above-mentioned deficiency, a kind of chip-level bottom filling adhesive and preparation method thereof is provided, this underfill has that cure shrinkage is low, the reliability high, meet simultaneously the requirement of low-activity (being that uranium content is less than 1PPb), be applicable to the one-level high density packing of memory chip.
Another object of the present invention is to provide a kind of preparation method of said chip level underfill.
Underfill of the present invention is composed of the following components by weight percentage: epoxy resin 15～50%, toughner 1～20%, dispersion agent 0.1～1%, defoamer 0.01～1%, coupling agent 0.8～10%, pigment 0.1～0.5%, filler 40～70%, solidifying agent 3～30%, thinner 1～20%.
The invention has the beneficial effects as follows: this chip-level bottom filling adhesive, cure shrinkage is low, has effectively guaranteed the reliability of encapsulation components and parts; Velocity of flow is fast, and particle dia is little, adapts to the requirement of high-density, the encapsulation of little gap; Radioactivity is low, does not affect chip memory.
Further, described epoxy resin is a kind of or several mixing arbitrarily in cycloaliphatic epoxy resin, Ppolynuclear aromatic epoxy resin, bisphenol A type epoxy resin, bisphenol f type epoxy resin and phenol aldehyde type epoxy resin.
Adopt the beneficial effect of above-mentioned further scheme to be, select dissimilar epoxy resin to coordinate, can be so that curing speed, the coefficient of expansion, cohesive strength etc. reach a trim point, thus obtain excellent over-all properties.
Further, described toughner is one or both the mixing in rubber modified resin, organic-silicon-modified resin.
Adopt the beneficial effect of above-mentioned further scheme to be, toughner add the toughness that namely can regulate cured article, thereby meet shock proof requirement.
Further, described dispersion agent is BYK-9076, the BYK-W9010 that German Bi Ke chemical company produces; A kind of or several mixing arbitrarily in BYK-W985, DISPERBYK-111, ANTI-TERRA-U 100.
Adopt the beneficial effect of above-mentioned further scheme to be, adding of dispersion agent makes filler more easily disperse, and system is even, stable performance.
Further, described defoamer is a kind of or several mixing arbitrarily in PC-1244, the PC-1344 of the BYK-A530, the BYK-A535 that produce of German Bi Ke chemical company, BYK-S706, BYK-077, Shanghai UCB SA.
Adopt the beneficial effect of above-mentioned further scheme to be, make the adding of defoamer in system to be difficult for producing bubble, or the bubble produced is easier to remove, when glue is filled, be difficult for producing defect.
Further, described silane coupling agent is a kind of or several mixing arbitrarily in β-(3,4-epoxycyclohexyl) ethyl trimethoxy silane, γ-glycidoxypropyltrimewasxysilane, γ mercaptopropyitrimethoxy silane, γ-aminopropyl triethoxysilane.
Adopt the beneficial effect of above-mentioned further scheme to be, silane coupling agent is conducive to improve fills the wettability of glue to base material, improves liquidity.
Further, described pigment is one or both the mixture in carbon black, nigrosine.
Further, described filler is low-activity, and wherein low-activity refers to that uranium content is less than 1PPb, and the ball-shaped silicon micro powder of mean diameter between 0.4～20 micron.
Adopt the beneficial effect of above-mentioned further scheme to be, the filler of low-activity can not make the memory of chip be affected; The filler mean diameter will guarantee the filling that little gap chip can be good between 0.4～20 micron, choose the combination of one or more particle diameters, makes loading level and mobility reach good balance, reduces shrinking percentage, reaches high reliability.
Further, described solidifying agent is any one in modified amine, anhydrides, salt.
Adopt the beneficial effect of above-mentioned further scheme to be, be applicable to the requirement of different solidification values, curing speed, and the requirement of soldering flux compatibility.
Further, described thinner is 12 to a kind of or several mixing arbitrarily in tetradecyl glycidyl ether, trishydroxymethyl triglycidyl ether, 4-tert-butyl-phenyl glycidyl ether, neopentylglycol diglycidyl ether, phenyl glycidyl ether.
Adopt the beneficial effect of above-mentioned further scheme to be, the viscosity of regulation system, meet the requirement of different velocity of flow.
A kind of preparation method of chip-level bottom filling adhesive, the method comprises:
A) take epoxy resin 15～50%, toughner 1～20%, dispersion agent 0.1～1%, defoamer 0.01～1%, coupling agent 0.8～10%, pigment 0.1～0.5%, drop in reactor and stirred 0.5～1 hour, form uniform solution;
B) take filler 40～70%, it is dropped in reactor and stirred 2～4 hours, form uniform solution;
C) temperature is controlled at 20～30 ℃, takes solidifying agent 3～30%, and it is dropped in reactor and stirred 1～2 hour, forms uniform solution;
D) take thinner 1～20%, drop in reactor, vacuum tightness-0.098～-300～600 rev/mins of 0.095MPa, rotating speed under, stirred 1～2 hour, obtain product.
Above-mentioned per-cent refers to that each composition weight accounts for the ratio of gross weight.
Embodiment
Below method of the present invention and step are described, example, only be used to explaining the present invention, is not intended to limit scope of the present invention.
Below by embodiment and Comparative Examples, further illustrate the present invention.In following embodiment and Comparative Examples, measure four performance index of curing performance, flowing property, thermal expansivity, shearing resistance of the finished product.Curing performance test, used differential scanning calorimetry (DSC), obtains the DSC cure profile, and wherein temperature rise rate is 60 ℃/minute, the set time when 130 ℃ of constant temperature are curing, unit, min.The flowing property testing method: use 24mm * 24mm testing plate, be comprised of cover glass and slide glass, gap is 50 microns (simulation packaged chips), in the time of 25 ℃, measures its flowing time, the min of unit.Thermal expansivity test (CTE), according to U.S. ASTMD696 standard, used thermomechanical analysis (TMA), and wherein temperature rise rate is 10 ℃/minute, the μ m/m ℃ of unit.The shearing resistance test, according to GB GB/T7124-1986 testing method, measure the AL/AL shearing resistance, and wherein condition of cure is to solidify 2 hours under 130 ℃, units MPa.
Embodiment 1
Accurately take following various raw material, cycloaliphatic epoxy resin 5g, Ppolynuclear aromatic epoxy resin 10g, rubber modified resin 1g, BYK-9076 0.1g, BYK-A530 0.1g, β-(3, the 4-epoxycyclohexyl) ethyl trimethoxy silane 5.3g, carbon black 0.5g drop in reactor and stirred 0.5～1 hour, become uniform solution; Then take mean diameter and be the low-activity silicon powder 70g of 20 microns, it is put in reactor and stirs 2～4 hours; Take modified amine curing agent 3g, now temperature is controlled at 20～30 ℃ again, and this solidifying agent is put in reactor, stirs 1～2 hour, mixes; Finally take neopentylglycol diglycidyl ether 5g, drop in reactor, vacuum tightness-0.098～-0.095MPa, 300～600 rev/mins of rotating speeds, stirred 1～2 hour, forms uniform solution, obtains product.
Embodiment 2
Accurately take following various raw material, Ppolynuclear aromatic epoxy resin 10g, bisphenol A type epoxy resin 10g, rubber modified resin 3g, BYK-W9010 0.2g, PC-1344 0.4g, γ-glycidoxypropyltrimewasxysilane 10g, carbon black 0.4 drop in reactor and stirred 0.5～1 hour, become uniform solution, then take mean diameter and be the low-activity silicon powder 50g of 15 microns, it is put in reactor and stirs 2～4 hours; Then take modified amine curing agent 7g, now temperature is controlled at 20～30 ℃, and this solidifying agent is put in reactor, stirs 1～2 hour, mixes; Finally take 4-tert-butyl-phenyl glycidyl ether 9g, drop in reactor, vacuum tightness-0.098～-0.095MPa, 300～600 rev/mins of rotating speeds, stirred 1～2 hour, forms uniform solution, obtains product.
Embodiment 3
Accurately take following various raw material, cycloaliphatic epoxy resin 15g, phenol aldehyde type epoxy resin 10g, organic-silicon-modified resin 2.5g, BYK-W985 0.15g, PC-1244 0.1g, γ-aminopropyl triethoxysilane 5.8g, carbon black 0.45 drop in reactor and stirred 0.5～1 hour, become uniform solution, then take mean diameter and be the low-activity silicon powder 48g of 10 microns, it is put in reactor and stirs 2～4 hours; Then take acid anhydride type curing agent 10g, now temperature is controlled at 20～30 ℃, and this solidifying agent is put in reactor, stirs 1～2 hour, mixes; Finally take 12 to tetradecyl glycidyl ether 8g, drop in reactor, vacuum tightness-0.098～-0.095MPa, 300～600 rev/mins of rotating speeds, stirred 1～2 hour, forms uniform solution, obtains product.
Embodiment 4
Accurately take following various raw material, bisphenol f type epoxy resin 15g, Ppolynuclear aromatic epoxy resin 17g, organic-silicon-modified resin 15g, DISPERBYK-111 0.2g, BYK-0770.8g, γ mercaptopropyitrimethoxy silane 3.68g, nigrosine 0.5 drop in reactor and stirred 0.5～1 hour, become uniform solution, then take mean diameter and be the low-activity silicon powder 40g of 5 microns, it is put in reactor and stirs 2～4 hours; Then take salt solidifying agent 3g, now temperature is controlled at 20～30 ℃, and this solidifying agent is put in reactor, stirs 1～2 hour, mixes; Finally take phenyl glycidyl ether 5g, drop in reactor, vacuum tightness-0.098～-0.095MPa, 300～600 rev/mins of rotating speeds, stirred 1～2 hour, forms uniform solution, obtains product.
Embodiment 5
Accurately take following various raw material, bisphenol A type epoxy resin 15g, phenol aldehyde type epoxy resin 10g, organic-silicon-modified resin 1g, ANTI-TERRA-U 100 0.15g, BYK-A5350.05g, β-(3, the 4-epoxycyclohexyl) ethyl trimethoxy silane 1.7g, nigrosine 0.1 drop in reactor and stirred 0.5～1 hour, are mixed into uniform solution; Then take mean diameter and be the low-activity silicon powder 30g that the low-activity silicon powder 10g of 0.4 micron and mean diameter are 5 microns, it is put into simultaneously in reactor and stirs 2～4 hours; Then take acid anhydride type curing agent 30g, now temperature is controlled at 20～30 ℃, and this solidifying agent is put in reactor, stirs 1～2 hour, mixes; Finally take trishydroxymethyl triglycidyl ether 2g, drop in reactor, vacuum tightness-0.098～-0.095MPa, 300～600 rev/mins of rotating speeds, stirred 1～2 hour, forms uniform solution, obtains product.
Embodiment 6
Accurately take following various raw material, Ppolynuclear aromatic epoxy resin 15g, rubber modified resin 20g, BYK-W9010 1g, BYK-S706 0.01g, γ mercaptopropyitrimethoxy silane 0.8g, carbon black 0.19 drop in reactor and stirred 0.5～1 hour, become uniform solution, then take mean diameter and be the low-activity silicon powder 40g of 15 microns, it is put in reactor and stirs 2～4 hours; Then take modified amine curing agent 3g, now temperature is controlled at 20～30 ℃, and this solidifying agent is put in reactor, stirs 1～2 hour, mixes; Finally take phenyl glycidyl ether 20g, drop in reactor, vacuum tightness-0.098～-0.095MPa, 300～600 rev/mins of rotating speeds, stirred 1～2 hour, forms uniform solution, obtains product.
Embodiment 7
Accurately take following various raw material, Ppolynuclear aromatic epoxy resin 25g, bisphenol A type epoxy resin 25g, rubber modified resin 1g, BYK-W9010 0.1g, PC-1344 1g, γ-glycidoxypropyltrimewasxysilane 3.4g, carbon black 0.5 drop in reactor and stirred 0.5～1 hour, become uniform solution, then take mean diameter and be the low-activity silicon powder 40g of 20 microns, it is put in reactor and stirs 2～4 hours; Then take acid anhydride type curing agent 3g, now temperature is controlled at 20～30 ℃, and this solidifying agent is put in reactor, stirs 1～2 hour, mixes; Finally take 4-tert-butyl-phenyl glycidyl ether 1g, drop in reactor, vacuum tightness-0.098～-0.095MPa, 300～600 rev/mins of rotating speeds, stirred 1～2 hour, forms uniform solution, obtains product.
The comparative example 1
Accurately take following various raw material, 3, 4-epoxycyclohexyl methyl-3, 4-epoxycyclohexyl manthanoate 40g, two (7-oxabicyclo [4.1.0] 3-methyl in heptan) adipic acid ester 40g, hexafluoro antimonate is that the Super XC-7231 0.5g of U.S. King company drops in reactor, at 30 ℃, stirred 30 minutes, make it to dissolve and become uniform solution, then add respectively acrylic acid epoxy resin 10g, butyl acrylate 5g, 1, 4-butyleneglycol 3g, β-(3, the 4-epoxycyclohexyl) ethyl trimethoxy silane 1g, benzoyl peroxide 0.3g, carbon black 0.2g, control temperature at 15 ℃, vacuum tightness is-0.05MPa, revolution is 500 rev/mins, , stirred 2 hours, obtain the homogeneous product.
The comparative example 2
Accurately take following various raw material, two (7-oxabicyclo [4.1.0] 3-methyl in heptan) adipic acid ester 30g, hexafluoro antimonate is that the K-PURE CXC-1612 1g of U.S. king company drops in reactor, at 30 ℃, stirred 30 minutes, making it to dissolve becomes uniform solution, then adds acrylic acid epoxy resin 15g, lauryl methacrylate(LMA) 30g, polyester polyol 20g, γ mercaptopropyitrimethoxy silane 3g, di-tert-butyl peroxide 0.5g, carbon black 0.5g; Control temperature at 15 ℃, vacuum tightness is-0.07MPa that revolution is 700 rev/mins, stirs 2 hours, obtains the homogeneous product.
Table 1
| Indices | Curing speed | Velocity of flow | CTE | Shearing resistance |
| Embodiment 1 | 8.3min | 7.3min | 18 | 17.3MPa |
| Embodiment 2 | 8.9min | 5.5min | 23 | 15.7MPa |
| Embodiment 3 | 6.3min | 5.6min | 23 | 14.9MPa |
| Embodiment 4 | 1.5min | 3.7min | 27 | 13.6MPa |
| Embodiment 5 | 5.9min | 3.2min | 29 | 14.2MPa |
| Embodiment 6 | 9.2min | 4.1min | 29 | 15.3MPa |
| Embodiment 7 | 9.8min | 3.9min | 30 | 14.7MPa |
| Comparative Examples 1 | 2min | 1.3min | 42 | 12MPa |
| Comparative Examples 2 | 3min | 1.4min | 53 | 13.1MPa |
From the data table 1, can find out, chip-level bottom filling adhesive of the present invention, fill out at the bottom of flowing time, set time slightly being longer than secondary, this can make glue recharge and solidification process in form subsurface defect still less; At aspects such as thermal expansivity, shearing resistances, filling glue than the secondary package bottom all has a clear superiority in.This has just determined that chip-level bottom filling adhesive has higher reliability, meets the requirement of high-density one-level encapsulation.
Simultaneously, because this chip-level bottom filling adhesive adopts the low-activity filler, so meet the requirement (being that U content is less than 1PPb) of low-activity, be applicable to the one-level high density packing of memory chip.
Claims (9)
1. the preparation method of a chip-level bottom filling adhesive, is characterized in that, the method comprises the following steps:
(a) take epoxy resin 15～50%, toughner 1～20%, dispersion agent 0.1～1%, defoamer 0.01～1%, coupling agent 0.8～10%, pigment 0.1～0.5%, drop in reactor and stir, form uniform solution;
(b) take filler 40～70%, it is dropped in reactor and stirs, form uniform solution;
(c) temperature is controlled at 20～30 ℃, takes solidifying agent 3～30%, and it is dropped in reactor and stirs, and forms uniform solution;
(d) take thinner 1～20%, drop in reactor, vacuum stirring, form uniform solution, obtains product; Wherein, described vacuum stirring refer to vacuum tightness-0.098～-300～600 rev/mins of 0.095MPa, rotating speed under, be uniformly mixed 1～2 hour;
Above-mentioned per-cent refers to that each composition weight accounts for the ratio of gross weight.
2. method according to claim 1, is characterized in that, the churning time described in step (a) is 0.5～1 hour; Churning time described in step (b) is 2～4 hours; Churning time described in step (c) is 1～2 hour.
3. chip-level bottom filling adhesive of preparing of the preparation method of chip-level bottom filling adhesive as claimed in claim 1, it is characterized in that, this material is comprised of following compositions in weight percentage: epoxy resin 15～50%, toughner 1～20%, dispersion agent 0.1～1%, defoamer 0.01～1%, coupling agent 0.8～10%, pigment 0.1～0.5%, filler 40～70%, solidifying agent 3～30%, thinner 1～20%.
4. chip-level bottom filling adhesive according to claim 3, it is characterized in that, described coupling agent is a kind of or several mixing arbitrarily in β-(3,4-epoxycyclohexyl) ethyl trimethoxy silane, γ-glycidoxypropyltrimewasxysilane, γ mercaptopropyitrimethoxy silane, γ-aminopropyl triethoxysilane.
5. chip-level bottom filling adhesive according to claim 3, is characterized in that, described solidifying agent is any one in modified amine, anhydrides, salt.
6. chip-level bottom filling adhesive according to claim 3, it is characterized in that, described thinner is 12 to a kind of or several mixing arbitrarily in tetradecyl glycidyl ether, trishydroxymethyl triglycidyl ether, 4-tert-butyl-phenyl glycidyl ether, neopentylglycol diglycidyl ether, phenyl glycidyl ether.
7. chip-level bottom filling adhesive according to claim 3, it is characterized in that, described epoxy resin is a kind of or several mixing arbitrarily in cycloaliphatic epoxy resin, Ppolynuclear aromatic epoxy resin, bisphenol A type epoxy resin, bisphenol f type epoxy resin or phenol aldehyde type epoxy resin.
8. chip-level bottom filling adhesive according to claim 3, is characterized in that, described toughner is one or both the mixing in rubber modified resin, organic-silicon-modified resin.
9. chip-level bottom filling adhesive according to claim 3, is characterized in that, described filler is that uranium content is less than 1PPb and the ball-shaped silicon micro powder of mean diameter between 0.4～20 micron.
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| CN102850988B (en) * | 2012-09-26 | 2014-05-07 | 中南大学 | Epoxy resin pouring sealant and usage method |
| CN103725240A (en) * | 2013-12-27 | 2014-04-16 | 烟台德邦科技有限公司 | Underfill adhesive with storage stability and fast mobility and preparation method of underfill adhesive |
| CN103937433B (en) * | 2014-04-01 | 2015-09-02 | 烟台德邦科技有限公司 | A kind of high reliability environment-friendly type underfill and preparation method thereof |
| CN104877579A (en) * | 2015-05-06 | 2015-09-02 | 无锡市中星工业胶带有限公司 | Transparent water-based conductive rubber glue |
| CN104946184A (en) * | 2015-07-01 | 2015-09-30 | 无锡市中星工业胶带有限公司 | Manufacturing process for uvioresistant rubber cement |
| CN104962224A (en) * | 2015-07-06 | 2015-10-07 | 深圳先进技术研究院 | Underfill adhesive and preparation method thereof |
| CN104946187A (en) * | 2015-07-20 | 2015-09-30 | 无锡市中星工业胶带有限公司 | Uvioresistant rubber cement |
| CN105385396B (en) * | 2015-12-11 | 2018-09-07 | 深圳百丽春新材料科技有限公司 | A kind of halogen-free thermosetting epoxy glue and its application |
| CN105802563B (en) * | 2016-04-20 | 2018-11-06 | 烟台德邦科技有限公司 | A kind of flow model chip-level bottom filling adhesive and preparation method thereof |
| CN107424964A (en) * | 2017-07-27 | 2017-12-01 | 武汉市三选科技有限公司 | Underfill constituent and its bottom filling method of use and Electronic Assemblies component |
| CN109467882B (en) * | 2018-11-05 | 2021-03-30 | 烟台德邦科技股份有限公司 | High-temperature and high-humidity resistant underfill material and preparation method thereof |
| CN112457807A (en) * | 2020-11-14 | 2021-03-09 | 烟台德邦科技股份有限公司 | Preparation method of chip-level underfill material with excellent thermal stability |
| CN114561178B (en) * | 2022-02-25 | 2024-01-26 | 中国航空制造技术研究院 | Low-density flame-retardant filling adhesive and preparation method thereof |
| CN115141588A (en) * | 2022-06-29 | 2022-10-04 | 上海回天新材料有限公司 | Epoxy resin adhesive for Type C sealing and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US7056978B2 (en) * | 2002-11-06 | 2006-06-06 | National Starch And Chemical Investment Holding Corporation | Toughened epoxy-anhydride no-flow underfill encapsulant |
| CN101864147B (en) * | 2010-06-28 | 2012-12-26 | 深圳市库泰克电子材料技术有限公司 | Underfill with low viscosity and low linear expansion coefficient |
| CN102002209B (en) * | 2010-10-26 | 2012-07-25 | 深圳市库泰克电子材料技术有限公司 | Bottom filling glue for packaging inverted chip type semiconductor |
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