CN102559060A - Chemical-mechanical planarization sizing agent for polishing silicon and copper - Google Patents
Chemical-mechanical planarization sizing agent for polishing silicon and copper Download PDFInfo
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- CN102559060A CN102559060A CN 201010609130 CN201010609130A CN102559060A CN 102559060 A CN102559060 A CN 102559060A CN 201010609130 CN201010609130 CN 201010609130 CN 201010609130 A CN201010609130 A CN 201010609130A CN 102559060 A CN102559060 A CN 102559060A
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- mechanical planarization
- planarization slurry
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- 239000010949 copper Substances 0.000 title claims abstract description 66
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 62
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 62
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 62
- 239000010703 silicon Substances 0.000 title claims abstract description 62
- 238000005498 polishing Methods 0.000 title claims abstract description 57
- 239000003795 chemical substances by application Substances 0.000 title claims abstract description 18
- 238000004513 sizing Methods 0.000 title abstract 4
- 238000005260 corrosion Methods 0.000 claims abstract description 14
- 230000007797 corrosion Effects 0.000 claims abstract description 14
- 239000003112 inhibitor Substances 0.000 claims abstract description 5
- 239000002002 slurry Substances 0.000 claims description 78
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 58
- 239000000203 mixture Substances 0.000 claims description 20
- 239000002253 acid Substances 0.000 claims description 14
- 150000001875 compounds Chemical class 0.000 claims description 14
- 239000006061 abrasive grain Substances 0.000 claims description 13
- 239000000126 substance Substances 0.000 claims description 12
- 230000006978 adaptation Effects 0.000 claims description 10
- 229940095054 ammoniac Drugs 0.000 claims description 7
- 150000007524 organic acids Chemical class 0.000 claims description 7
- 238000006557 surface reaction Methods 0.000 claims description 6
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 239000013543 active substance Substances 0.000 claims description 4
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 4
- 229910017604 nitric acid Inorganic materials 0.000 claims description 4
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 4
- 229920000642 polymer Polymers 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 claims description 3
- 150000001413 amino acids Chemical class 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 239000011324 bead Substances 0.000 claims description 3
- 239000008367 deionised water Substances 0.000 claims description 3
- 229910021641 deionized water Inorganic materials 0.000 claims description 3
- 229910052736 halogen Inorganic materials 0.000 claims description 3
- 150000002367 halogens Chemical class 0.000 claims description 3
- 150000007530 organic bases Chemical class 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 150000003839 salts Chemical class 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical group O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 239000000758 substrate Substances 0.000 abstract description 10
- 230000000694 effects Effects 0.000 abstract description 4
- 239000007769 metal material Substances 0.000 abstract description 3
- 239000002245 particle Substances 0.000 abstract description 3
- 239000007800 oxidant agent Substances 0.000 abstract description 2
- 230000003750 conditioning effect Effects 0.000 abstract 2
- 239000003513 alkali Substances 0.000 abstract 1
- 230000000844 anti-bacterial effect Effects 0.000 abstract 1
- 239000003899 bactericide agent Substances 0.000 abstract 1
- 238000011109 contamination Methods 0.000 abstract 1
- 230000007547 defect Effects 0.000 abstract 1
- 239000003344 environmental pollutant Substances 0.000 abstract 1
- 231100000719 pollutant Toxicity 0.000 abstract 1
- 238000006748 scratching Methods 0.000 abstract 1
- 230000002393 scratching effect Effects 0.000 abstract 1
- 239000003381 stabilizer Substances 0.000 abstract 1
- 239000004094 surface-active agent Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 description 15
- 238000005516 engineering process Methods 0.000 description 10
- 239000012530 fluid Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- XWNSFEAWWGGSKJ-UHFFFAOYSA-N 4-acetyl-4-methylheptanedinitrile Chemical compound N#CCCC(C)(C(=O)C)CCC#N XWNSFEAWWGGSKJ-UHFFFAOYSA-N 0.000 description 5
- 239000004153 Potassium bromate Substances 0.000 description 5
- 238000005538 encapsulation Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 229940094037 potassium bromate Drugs 0.000 description 5
- 235000019396 potassium bromate Nutrition 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- KGWDUNBJIMUFAP-KVVVOXFISA-N Ethanolamine Oleate Chemical compound NCCO.CCCCCCCC\C=C/CCCCCCCC(O)=O KGWDUNBJIMUFAP-KVVVOXFISA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- AVXURJPOCDRRFD-UHFFFAOYSA-N Hydroxylamine Chemical compound ON AVXURJPOCDRRFD-UHFFFAOYSA-N 0.000 description 2
- FRHWVPSOGPPETO-UHFFFAOYSA-N O[I][K] Chemical compound O[I][K] FRHWVPSOGPPETO-UHFFFAOYSA-N 0.000 description 2
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 2
- 235000011114 ammonium hydroxide Nutrition 0.000 description 2
- BEOODBYKENEKIC-UHFFFAOYSA-N azanium;bromate Chemical compound [NH4+].[O-]Br(=O)=O BEOODBYKENEKIC-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 239000002075 main ingredient Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- KHIWWQKSHDUIBK-UHFFFAOYSA-N periodic acid Chemical compound OI(=O)(=O)=O KHIWWQKSHDUIBK-UHFFFAOYSA-N 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- VKJKEPKFPUWCAS-UHFFFAOYSA-M potassium chlorate Chemical compound [K+].[O-]Cl(=O)=O VKJKEPKFPUWCAS-UHFFFAOYSA-M 0.000 description 2
- SATVIFGJTRRDQU-UHFFFAOYSA-N potassium hypochlorite Chemical compound [K+].Cl[O-] SATVIFGJTRRDQU-UHFFFAOYSA-N 0.000 description 2
- JLKDVMWYMMLWTI-UHFFFAOYSA-M potassium iodate Chemical compound [K+].[O-]I(=O)=O JLKDVMWYMMLWTI-UHFFFAOYSA-M 0.000 description 2
- 239000001230 potassium iodate Substances 0.000 description 2
- 229940093930 potassium iodate Drugs 0.000 description 2
- 235000006666 potassium iodate Nutrition 0.000 description 2
- ORQYPOUSZINNCB-UHFFFAOYSA-N potassium;hypobromite Chemical compound [K+].Br[O-] ORQYPOUSZINNCB-UHFFFAOYSA-N 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- PFNFFQXMRSDOHW-UHFFFAOYSA-N spermine Chemical compound NCCCNCCCCNCCCN PFNFFQXMRSDOHW-UHFFFAOYSA-N 0.000 description 2
- 229960004418 trolamine Drugs 0.000 description 2
- -1 Hydrocerol A diamines Chemical class 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 239000007853 buffer solution Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000004581 coalescence Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 150000003141 primary amines Chemical class 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229940063675 spermine Drugs 0.000 description 1
- 238000013517 stratification Methods 0.000 description 1
- 150000003512 tertiary amines Chemical group 0.000 description 1
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 1
- YWYZEGXAUVWDED-UHFFFAOYSA-N triammonium citrate Chemical compound [NH4+].[NH4+].[NH4+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O YWYZEGXAUVWDED-UHFFFAOYSA-N 0.000 description 1
- 235000011046 triammonium citrate Nutrition 0.000 description 1
- 239000001393 triammonium citrate Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The invention provides a chemical-mechanical planarization sizing agent for polishing silicon and copper. The chemical-mechanical planarization sizing agent comprises grinding particles, an oxidizing agent, an alkali polishing rate conditioning agent, a pH conditioning agent, a surface active agent, a stabilizing agent, a corrosion inhibitor, a bactericide, a polishing rate adjusting agent and the like. The chemical-mechanical planarization sizing agent provided by the invention has the advantages that the higher removal rates of silicon and copper can be obtained simultaneously, the polishing selection ratio of the copper and silicon is adjusted during chemical-mechanical polishing and the local or whole corrosion effect of a metal material is controlled, and the surface defect of a substrate, scratching, sticky contamination and other residual pollutants basically do not exist.
Description
Technical field
The present invention relates to a kind of chemical-mechanical planarization slurry, relate in particular to a kind of chemical-mechanical planarization slurry that is used for polished silicon and copper.
Background technology
Development along with microelectronics; The very large scale integration chip integration has reached tens components and parts; Characteristic dimension has got into nano level; This just requires hundreds of procedure, especially multilayer wiring, substrate, medium in unicircuit (IC) ME must pass through chemical-mechanical planarization.Planarization has become with photoetching and etching is of equal importance and one of complementary indispensable gordian technique in the IC ME.And chemically machinery polished (CMP) technology be at present the most effectively, the most sophisticated planarization.Chemical-mechanical polishing system is that technology such as collection cleaning, drying, online detection, end point determination are technological with the chemical-mechanical planarization of one; Be unicircuit to the product and the unicircuit of miniaturization, multiple stratification, planarization, slimming development enhance productivity, reduce cost, the indispensable technology of wafer overall situation planarization.
In IC manufacturing field, the material of very extensive integrated routing is just transformed to Cu by traditional Al.Compare with Al, it is low that the Cu wiring has resistivity, and deelectric transferred energy rate is high, and RC is short time of lag, and it is half that the cloth number of plies is reduced, and cost reduces by 30%, shortens 40% advantage process period.The advantage of Cu wiring has caused that the whole world pays close attention to widely.But also copper material is not carried out plasma etching or wet etching effectively at present, so that the technology that copper-connection fully forms in unicircuit, so the cmp method of copper is considered to the most effectively alternative method.
CMP is widely used in IC manufacturing field; The polishing object comprises substrate, medium and interconnection material etc., in IC makes, because multilayer wiring; Make silicon chip surface form irregular pattern; Remove and need carry out also need carrying out planarization to silicon outside the planarization to wiring, chemically machinery polished then can be carried out planarization to multilayer wiring, substrate, medium with polishing pad simultaneously.It is also most important that CMP encapsulates TSV (TSV, Through-Silicon-Via silicon through hole) technology for 3D.3D encapsulation TSV is through between chip and the chip, make vertical conducting between wafer and the wafer, realizes the state-of-the-art technology that interconnects between the chip.Different with the superimposing technique of using salient point with the bonding of IC encapsulation in the past, TSV can make chip maximum in the density that three-dimensional piles up, and physical dimension is minimum, improves the performance of chip speed and reduce power consumption greatly.It also be called as after bonding (Wire Bonding), TAB and flip-chip (FC) the 4th generation encapsulation technology.The main advantage of 3D encapsulation is: have minimum size and weight, different types of technology is integrated in the single encapsulation, replace long 2D interconnection with short perpendicular interconnection, reduce ghost effect and power consumption etc.
At present, a series of chemical mechanical polishing slurries that are suitable for polished silicon and copper have appearred, as: patent US2002/0151252A1 discloses a kind of compsn and method that is used for silicon CMP, can carry out the selectivity polishing to the metal and the silicon of silicon face; Patent US2006/0014390A1 discloses a kind of chemical mechanical polishing slurry that is used for silicon and metal, and this chemical mechanical polishing slurry has the characteristics of selectivity polishing; Patent US 5860848 discloses a kind of method of using the electrolytical silicon CMP of polymer; Publication number is that the patent of CN1459480A discloses a kind of polishing liquid used in copper chemical mechanical polishing technology, the membrane-forming agent and film coalescence aid and the abrasive material realization CMP process that utilize buffered soln to form; Granted publication has been number for the patent of CN1195896C discloses a kind of CMP slurries manufacturing of copper and method of manufacture that is used for unicircuit of being used for, and spot corrosion, the corrosion of copper layer are reduced and obtains good copper-connection planarity.
Granted publication number utilizes chelating organic acid buffer system and abrasive to be combined into copper polish slurry, and has reduced integral body and local corrosion for the patent of CN1256765C also discloses a kind of used slurry of chemically machinery polished of copper.
Traditional copper polishing fluid uses hydrogen peroxide to be oxygenant; But this oxygenant can suppress the polishing of silicon; And also there is the insufficient situation of speed of removing in the polishing fluid of mentioning in the above-mentioned patent that is used for the high speed copper polishing; Perhaps substrate surface exists defective, scuffing, pickup and/or other is residual, or not enough to the polishing selectivity of copper, or exists problems such as part or general corrosion in the polishing process; Be inappropriate for the needs of the manufacturing process flow process of present electronic product, therefore be necessary to develop the chemical mechanical polishing slurry that is applicable to the high speed processing procedure that makes new advances.
Summary of the invention
The invention provides the chemical-mechanical planarization slurry of a kind of polished silicon and copper, said chemical-mechanical planarization slurry is realized high speed polishing silicon and copper simultaneously, and the part and the general corrosion of control metallic substance, reduces the substrate surface pollutent.
The chemical-mechanical planarization slurry of polished silicon of the present invention and copper comprises abrasive grains, oxygenant, carrier, can form the alkaline polishing rate adaptation agent of the compound that be soluble in carrier with silicon and copper surface reaction.
The chemical-mechanical planarization slurry of above-mentioned polished silicon and copper wherein, comprises that also the agent of said alkaline polishing rate adaptation is one or more the mixing in organic bases, the ammoniac compounds.
The chemical-mechanical planarization slurry of above-mentioned polished silicon and copper, wherein, said polishing speed regulator is preferably and contains-ammoniac compounds of NH-structure.
The chemical-mechanical planarization slurry of above-mentioned polished silicon and copper, wherein, the quality percentage composition of said polishing speed regulator in said chemical-mechanical planarization slurry is 0.05 ~ 10%.
The chemical-mechanical planarization slurry of above-mentioned polished silicon and copper, wherein, said abrasive grains is one or more the mixing in silicon oxide, aluminum oxide, cerium oxide, the polymer beads.
The chemical-mechanical planarization slurry of above-mentioned polished silicon and copper, wherein, the quality percentage composition of said abrasive grains in said chemical-mechanical planarization slurry is 0.05 ~ 10%.
The chemical-mechanical planarization slurry of above-mentioned polished silicon and copper, wherein, the median size of said abrasive grains is 20 ~ 200nm, preferred median size is 30 ~ 100nm.
The chemical-mechanical planarization slurry of above-mentioned polished silicon and copper, wherein, said oxygenant is one or more the mixing in the soluble salt of halogen oxyacids or said oxygen acid; Like Periodic acid 99, hyperbromic acid, perchloric acid; Potassium Iodate, potassium bromate, Potcrate; Hypoiodous acid potassium, potassium hypobromite, potassium hypochlorite, bromic acid ammonium etc.
The chemical-mechanical planarization slurry of above-mentioned polished silicon and copper, wherein, the quality percentage composition of said oxygenant in said chemical-mechanical planarization slurry is 0.1 ~ 10%.
The chemical-mechanical planarization slurry of above-mentioned polished silicon and copper, wherein, said chemical-mechanical planarization slurry also comprises pH value regulator.
The chemical-mechanical planarization slurry of above-mentioned polished silicon and copper; Wherein, Said pH value regulator is alkaline matter or nitric acid, said alkaline matter such as tetramethyl-oxyammonia, tetraethyl-oxyammonia, tetrapropyl oxyammonia, ammoniacal liquor, Pottasium Hydroxide, thanomin, trolamine etc.
The chemical-mechanical planarization slurry of above-mentioned polished silicon and copper, wherein, said chemical-mechanical planarization slurry pH value is 8.0 ~ 12.0, preferred pH value is 9.0 ~ 11.0.
The chemical-mechanical planarization slurry of above-mentioned polished silicon and copper, wherein, said chemical-mechanical planarization slurry also comprises tensio-active agent, stablizer, corrosion inhibitor and sterilant.
The chemical-mechanical planarization slurry of above-mentioned polished silicon and copper; Wherein, Said chemical-mechanical planarization slurry also comprises acid polishing speed regulator; Said acid polishing speed regulator be for can forming the acid of the compound that be soluble in carrier with silicon and copper surface reaction, like in organic acid, amino acid, organic acid of seeing, the organic sulfonic acid one or more.
The chemical-mechanical planarization slurry of above-mentioned polished silicon and copper, wherein, the quality percentage composition of said acid polishing speed regulator in said chemical-mechanical planarization slurry is 0.05 ~ 10%.
The chemical-mechanical planarization slurry of above-mentioned polished silicon and copper, wherein, said carrier is a deionized water.
Adopt silicon of the present invention and its advantage of copper chemical mechanical planarization slurry to be:
1. the chemical-mechanical planarization slurry of polished silicon of the present invention and copper is through the effect while high speed polishing silicon and the copper of polishing system.
2. the chemical-mechanical planarization slurry of polished silicon of the present invention and copper is controlled the part and the general corrosion of the material of metal simultaneously, reduces board and substrate surface pollutent, improves the product yield.
3. the chemical-mechanical planarization slurry of polished silicon of the present invention and copper can be regulated copper/silicon and select ratio, satisfies different processing procedures TSV is polished requirement.
Embodiment
The chemical-mechanical planarization slurry of disclosed polished silicon of the present invention and copper contains one or more polishing speed regulators.
The concrete component of this chemical-mechanical planarization slurry is:
Abrasive grains quality percentage composition 0.05 ~ 10%;
Oxygenant quality percentage composition 0.1 ~ 10%;
Alkaline polishing rate adaptation agent quality percentage composition 0.05 ~ 10%;
Corrosion inhibitor is an amount of;
PH value regulator is an amount of;
Tensio-active agent is an amount of;
Stablizer is an amount of;
Sterilant is an amount of;
The carrier surplus.
Said abrasive grains is that median size is silicon oxide, aluminum oxide, cerium oxide, polymer beads (like Vilaterm, tetrafluoroethylene) of 20 ~ 200nm etc.
As oxygenant, it comprises Periodic acid 99 to said oxygenant, hyperbromic acid, perchloric acid, Potassium Iodate, potassium bromate, Potcrate, hypoiodous acid potassium, potassium hypobromite, potassium hypochlorite, bromic acid ammonium etc. with the soluble salt of halogen oxyacids or said oxygen acid.
Said polishing speed regulator can contain for forming organic bases, the ammoniac compounds that is prone to dissolve compound with silicon and copper surface reaction, especially being preferably-ammoniac compounds of NH-structure; Also can comprise with silicon and copper surface reaction and form the organic acid that is prone to dissolve compound, amino acid, organic acid of seeing, organic sulfonic acid etc.
Said pH value regulator is alkaline matter such as tetramethyl-oxyammonia, tetraethyl-oxyammonia, tetrapropyl oxyammonia, ammoniacal liquor, Pottasium Hydroxide, thanomin, trolamine etc., also can be nitric acid.
Silicon that mentioned component is formed and copper chemical mechanical planarization slurry can improve medal polish speed and improve silicon and copper medal polish speed simultaneously; The part and the general corrosion of the material of control metal reduce board and substrate surface pollutent, improve the product yield; Can regulate copper/silicon and select ratio, satisfy different processing procedures TSV is polished requirement.
Before the use, chemical reaction by specific mixed, is taken place between various compositions in above-mentioned composition, rising polishing fluid temperature in polishing process, thus significantly improve polishing fluid efficient.
Mode through embodiment further specifies the present invention below, does not therefore limit the present invention among the described scope of embodiments.
Embodiment 1
The chemical planarization slurry main ingredient of polished silicon of the present invention and copper comprises 0.8wt% alumina abrasive particles (median size 100nm); The 5wt% potassium bromate oxidiser, YD 30 (0.5wt%) and 1,2 is selected in the rate adaptation agent; 4-tetrazole (0.1wt%) is adjusted to 10 with the pH value.
Embodiment 2
Select for use cerium oxide (median size 200nm) as abrasive grains, its quality percentage composition is 0.1%; Hydrocerol A diamines (5wt%) and tn (1wt%) are selected in the rate adaptation agent; The 2wt% potassium bromate is made oxygenant; The pH value is adjusted to 10.5.
Embodiment 3
Select for use silicon oxide (median size 70nm) as abrasive grains, its quality percentage composition is 0.5t%; Triammonium citrate (5wt%) and spermine (1wt%) are selected in the rate adaptation agent; The 2wt% potassium bromate is made oxygenant; The pH value is adjusted to 10.6.
Embodiment 4 ~ 17, with reference to embodiment 1 ~ 3, select different polishing particle, rate adaptation agent and oxygenant for use, and staple material title and consumption are seen table 1.
Table 1 has provided the chemical-mechanical planarization slurry embodiment 1 ~ 17 and contrast polishing fluid main ingredient and quality percentage composition of polished silicon of the present invention and copper; Each composition is mixed; Deionized water is supplied mass percent 100%, is adjusted to required pH value with pH value regulator (20%KOH or rare nitric acid are selected according to the needs of pH value) at last; Continue to be stirred to uniform fluid, leave standstill and to obtain each chemical-mechanical planarization slurry in 30 minutes.
Polishing fluid 1 ~ 17 of the present invention in the table 1 and contrast polishing fluid are polished differing materials (comprising silicon substrate, Cu substrate) respectively.Polishing condition is identical, and burnishing parameters is following: Logitech polishing pad, downward pressure 3 ~ 5psi, rotary speed/rubbing head rotating speed=60/80rpm, polishing time 120s, silicon and copper chemical mechanical planarization flow rate of slurry 100mL/min.Polish results is seen table 2.
Data in
table 1, the table 2 show: after adding the polishing speed regulator in the chemical-mechanical planarization slurry of polished silicon of the present invention and copper, in the time of in polished silicon and copper, can regulating chemically machinery polished to the polishing selection ratio of copper and silicon and control the part or the general corrosion effect of metallic substance.
When carrying out the polishing of silicon and copper to different needs, the composition, the quality percentage composition that only need to regulate the polishing speed regulator in the chemical-mechanical planarization slurry of the present invention can be realized the polishing selection ratio of differing materials is polished requirement to satisfy different processing procedures to TSV.
In the foregoing description, can also add pH value regulator, tensio-active agent, stablizer, sterilant and corrosion inhibitor etc., so that the chemical planarization slurry of polished silicon of the present invention and copper has better result of use.
Should be understood that ammoniac compounds according to the invention comprises the compound that contains primary amine, swollen amine, tertiary amine group; Said wt% all refers to the quality percentage composition.
More than specific embodiment of the present invention is described in detail, but it is just as example, the present invention is not restricted to the specific embodiment of above description.To those skilled in the art, any equivalent modifications that the present invention is carried out with substitute also all among category of the present invention.Therefore, not breaking away from impartial conversion and the modification of being done under the spirit and scope of the present invention, all should contain within the scope of the invention.
Claims (19)
1. the chemical-mechanical planarization slurry of polished silicon and copper; It is characterized in that; Comprise abrasive grains, oxygenant, carrier and the agent of alkaline polishing rate adaptation, the agent of said alkaline polishing rate adaptation is for forming the alkaline matter of the compound that is soluble in carrier with silicon and copper surface reaction.
2. chemical-mechanical planarization slurry according to claim 1 is characterized in that, the agent of said alkaline polishing rate adaptation is one or more the mixing in organic bases, the ammoniac compounds.
3. chemical-mechanical planarization slurry according to claim 2 is characterized in that, said ammoniac compounds is to contain-compound of NH-structure.
4. chemical-mechanical planarization slurry according to claim 2 is characterized in that, the quality percentage composition of said polishing speed regulator in said chemical-mechanical planarization slurry is 0.05 ~ 10%.
5. chemical-mechanical planarization slurry according to claim 1 is characterized in that, said abrasive grains is one or more the mixing in silicon oxide, aluminum oxide, cerium oxide, the polymer beads.
6. chemical-mechanical planarization slurry according to claim 5 is characterized in that, the quality percentage composition of said abrasive grains in said chemical-mechanical planarization slurry is 0.05 ~ 10%.
7. chemical-mechanical planarization slurry according to claim 5 is characterized in that, the median size of said abrasive grains is 20 ~ 200nm.
8. chemical-mechanical planarization slurry according to claim 7 is characterized in that, the median size of said abrasive grains is 30 ~ 100nm.
9. chemical-mechanical planarization slurry according to claim 1 is characterized in that, said oxygenant is one or more the mixing in the soluble salt of halogen oxyacids or said oxygen acid.
10. chemical-mechanical planarization slurry according to claim 9 is characterized in that, the quality percentage composition of said oxygenant in said chemical-mechanical planarization slurry is 0.1 ~ 10%.
11. chemical-mechanical planarization slurry according to claim 1 is characterized in that, said chemical-mechanical planarization slurry also comprises pH value regulator.
12. chemical-mechanical planarization slurry according to claim 11 is characterized in that, said pH value regulator is alkaline matter or nitric acid.
13., it is characterized in that said chemical-mechanical planarization slurry pH value is 8.0 ~ 12.0 according to the described chemical-mechanical planarization slurry of claim 12.
14. chemical-mechanical planarization slurry according to claim 13 is characterized in that, said chemical-mechanical planarization slurry pH value is 9.0 ~ 11.0.
15. chemical-mechanical planarization slurry according to claim 1 is characterized in that, said chemical-mechanical planarization slurry also comprises tensio-active agent, stablizer, corrosion inhibitor and sterilant.
16. chemical-mechanical planarization slurry according to claim 1; It is characterized in that; Said chemical-mechanical planarization slurry also comprises acid polishing speed regulator, and said acid polishing speed regulator is for forming the acid of the compound that is soluble in carrier with silicon and copper surface reaction.
17. chemical-mechanical planarization slurry according to claim 1 is characterized in that, said acid polishing speed regulator is one or more the mixing in organic acid, amino acid, organic acid of seeing, the organic sulfonic acid.
18. silicon according to claim 17 and copper chemical mechanical planarization slurry is characterized in that, the quality percentage composition of said acid polishing speed regulator in said chemical-mechanical planarization slurry is 0.05 ~ 10%.
19. silicon according to claim 1 and copper chemical mechanical planarization slurry is characterized in that said carrier is a deionized water.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010609130 CN102559060A (en) | 2010-12-28 | 2010-12-28 | Chemical-mechanical planarization sizing agent for polishing silicon and copper |
| PCT/CN2011/002132 WO2012088754A1 (en) | 2010-12-28 | 2011-12-19 | Chemical mechanical planarization slurry for polishing silicon and copper |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010609130 CN102559060A (en) | 2010-12-28 | 2010-12-28 | Chemical-mechanical planarization sizing agent for polishing silicon and copper |
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| Publication Number | Publication Date |
|---|---|
| CN102559060A true CN102559060A (en) | 2012-07-11 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201010609130 Pending CN102559060A (en) | 2010-12-28 | 2010-12-28 | Chemical-mechanical planarization sizing agent for polishing silicon and copper |
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| Country | Link |
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| CN (1) | CN102559060A (en) |
| WO (1) | WO2012088754A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104745091A (en) * | 2013-12-26 | 2015-07-01 | 安集微电子（上海）有限公司 | Chemical mechanical polishing liquid and use method thereof |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006112519A1 (en) * | 2005-04-14 | 2006-10-26 | Showa Denko K.K. | Polishing composition |
| JP2007012679A (en) * | 2005-06-28 | 2007-01-18 | Asahi Glass Co Ltd | Abrasive and manufacturing method of semiconductor integrated circuit device |
| CN101418190B (en) * | 2007-10-26 | 2013-10-02 | 安集微电子（上海）有限公司 | Chemico-mechanical polishing liquid |
| CN101550319A (en) * | 2008-04-03 | 2009-10-07 | 安集微电子（上海）有限公司 | Chemical mechanical polishing solution |
-
2010
- 2010-12-28 CN CN 201010609130 patent/CN102559060A/en active Pending
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2011
- 2011-12-19 WO PCT/CN2011/002132 patent/WO2012088754A1/en active Application Filing
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104745091A (en) * | 2013-12-26 | 2015-07-01 | 安集微电子（上海）有限公司 | Chemical mechanical polishing liquid and use method thereof |
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| Publication number | Publication date |
|---|---|
| WO2012088754A1 (en) | 2012-07-05 |
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Application publication date: 20120711 |