CN102544114B - Accumulation type grooved-gate diode - Google Patents
Accumulation type grooved-gate diode Download PDFInfo
- Publication number
- CN102544114B CN102544114B CN201210049361.6A CN201210049361A CN102544114B CN 102544114 B CN102544114 B CN 102544114B CN 201210049361 A CN201210049361 A CN 201210049361A CN 102544114 B CN102544114 B CN 102544114B
- Authority
- CN
- China
- Prior art keywords
- type
- heavily doped
- bar shaped
- region
- type heavily
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
The invention relates to an accumulation type grooved-gate diode, belonging to the technical field of semiconductor devices. The accumulation type grooved-gate diode comprises an N<+> substrate, a metallized cathode on the back surface of the N<+> substrate and an N<-> drift region on the front surface of the N<+> substrate, wherein a slotted grid electrode and a silicon dioxide grid oxidation layer are arranged outside the two sides of the top of the N<-> drift region; two N-type heavily doped regions are respectively arranged on the two sides of the top of the N<-> drift region, and a P-type heavily doped region is arranged between the two N-type heavily doped regions; a P-type buried layer region is arranged just above the P-type heavily doped region; and a plurality of separately distributed P-type column regions are arranged between the P-type buried layer region and the P-type heavily doped region. The P-type buried layer region, the N-type heavily doped region and the silicon dioxide grid oxidation layer form a charge carrier accumulation region. According to the accumulation type grooved-gate diode disclosed by the invention, a device has smaller conduction voltage drop, shorter reverse recovery time and ultralow reverse recovery peak value current by guiding one P-type buried layer region without influencing reverse breakdown voltage and reverse leakage current.
Description
Technical field
The invention belongs to technical field of semiconductor device, relate to semiconductor diode device structure.
Background technology
In electronic circuit, diode is one of the most frequently used base electronic components and parts; In Power Electronic Circuit, diode is more followed someone like his shadow with switching device, indispensable.Traditional rectifier diode mainly contains PN junction diode and Schottky diode two classes.Wherein PN junction diode forward conduction voltage drop is larger, and reverse recovery time is longer, but the stability of PN junction diode is better, can work in high voltage; Schottky diode has absolute predominance when low-voltage: its forward conduction voltage drop is little, and reverse recovery time is short, but leakage current when Schottky diode is reverse is relatively high, and unstable.In order to improve diode behavior, proposed Junction Barrier Controlled rectifier JBS (JBS:Junction Barrier Controlled Schottky Rectifier) both at home and abroad, mixed the devices such as PiN/ Schottky rectifier MPS (MPS:Merged P-i-N/Schottky Rectifier), trench MOS barrier Schottky diode TMBS (TMBS:Trench MOS Barrier Shcottky Diode), super barrier rectifier SBR (SBR:SuperBarrier Rectifier).
Fast recovery diode (be called for short FRD) be a kind ofly have that switching characteristic is good, reverse recovery time short feature semiconductor diode, be mainly used in the electronic circuits such as Switching Power Supply, PWM pulse width modulator, frequency converter, as high-frequency rectification diode, fly-wheel diode or damper diode, use.The internal structure of fast recovery diode is different from common PN junction diode, and it belongs to PiN junction diode, in the middle of P type silicon materials and N-type silicon materials, has increased base i, forms PiN silicon chip.Because base is very thin, QRR is very little, so the reverse recovery time of fast recovery diode is shorter, forward voltage drop is lower, and reverse breakdown voltage (withstand voltage) is higher.Fast recovery diode adopts gold doping in manufacturing process, and the simple techniques such as diffusion can obtain higher switching speed, also can obtain higher withstand voltage simultaneously.Be generally hundreds of nanosecond the reverse recovery time of fast recovery diode, and forward voltage drop is about 0.7V, and forward current is several amperes of extremely several kiloamperes, and peak-inverse voltage can reach hundreds of to several kilovolts.The QRR of Ultrafast recovery diode further reduces, and makes to be low to moderate for tens nanoseconds its reverse recovery time.
Schottky diode is the abbreviation of Schottky barrier diode (Schottky Barrier Diode, referred to as SBD).Schottky diode is the low-power consumption of coming out in recent years, large electric current, ultra-speed semiconductor device.Schottky diode does not utilize P type semiconductor to contact with N type semiconductor to form PN junction principle makes, but utilizes metal contact the metal-semiconductor junction principle making of formation with semiconductor.Schottky Rectifier is only used a kind of charge carrier (electronics) delivered charge, and the accumulation in potential barrier outside without excess minority carrier, therefore, does not exist charge storage problem (Qrr → 0), aobvious improvement when switching characteristic is obtained.Its reverse recovery time extremely short (may diminish to several nanoseconds), forward conduction voltage drop is 0.4V left and right only, and rectified current can reach several thousand milliamperes.These good characteristics are that fast recovery diode is incomparable.
Because the reverse potential barrier of Schottky diode is thinner, and very easily puncture on its surface, so reverse breakdown voltage is lower, oppositely withstand voltage lower, scarcely higher than 60V (the highest only about 100V), cause its range of application narrower.Because Schottky diode is more easily subject to thermal breakdown than PN junction diode, reverse leakage current is larger than PN junction diode.
How to obtain and to be similar to the breakdown characteristics of PN junction diode and forward conduction characteristic and the reverse recovery characteristic of thermal characteristics and Schottky diode simultaneously, be that technical field of semiconductor device pursued always in the last few years.
Summary of the invention
The invention provides a kind of accumulation type groove grid diode, this diode is a kind of accumulation type groove grid diode that adopts slot grid structure to make, by introducing Yi Ge p type buried layer district, can make device when reverse bias, can bear and puncture accordingly and Leakage Current is still very little.Existence due to carrier accumulation district during device forward bias makes forward conduction voltage drop extremely low.In addition, because the present invention is how sub-device, so reverse recovery time and peak current are also extremely low.
Technical solution of the present invention is as follows:
A groove grid diode, its structure, as shown in Fig. 1～4, comprises N
+substrate 2, is positioned at N
+the metallization negative electrode 1 at substrate 2 back sides, is positioned at N
+the N in substrate 2 fronts
-drift region 3 and the metallization anode 9 that is positioned at whole diode top layer; At N
-outside the both sides, top of drift region 3, there is respectively 5, two grooved gate electrodes 5 of a grooved gate electrode and N
-isolated by silicon dioxide gate oxide 4 separately respectively between drift region 3; At N
-the both sides, top of drift region 3 have respectively between bar shaped N-type heavily doped region 7,7, two of bar shaped N-type heavily doped regions and have a bar shaped P type heavily doped region 8; Below bar shaped P type heavily doped region 8 and be positioned at the N of two silicon dioxide gate oxide 4 zone lines
-in drift region 3, there is bar shaped p type buried layer district 6; Between bar shaped p type buried layer district 6 and bar shaped P type heavily doped region 8, there are some P Xing Zhu districts 10 spaced apart and that be connected respectively with bar shaped P type heavily doped region 8 with bar shaped p type buried layer district 6; Metallization anode 9 is covered in two bar shaped N-type heavily doped regions 7, bar shaped P type heavily doped region 8 and two grooved gate electrode 5 surfaces.
Operation principle of the present invention:
A kind of accumulation type groove grid diode provided by the present invention, can realize under corresponding voltage withstand class, and Leakage Current is less; Between forward conduction voltage drop and turn-off power loss, have well compromise.Can obtain the forward conduction and the reverse recovery characteristic that are similar to the reverse blocking voltage of PN junction diode and are similar to Schottky diode.Now take Fig. 1 and Fig. 2 as example, operation principle of the present invention is described.
A kind of accumulation type groove grid diode provided by the present invention, metallization anode 9 JiangNXing heavily doped regions 7, P type heavily doped region 8, grooved gate electrode 5 short circuits, and connect anode potential, and p type buried layer district 6 is by P Xing Zhu district 10 and P type heavily doped region 8 short circuits, thus and anode short circuit.N between 6 ,NXing heavily doped regions 7, p type buried layer district, silicon dioxide gate oxide 4 threes
-drift region forms carrier accumulation district A.When metallization anode 9 is with respect to metallization negative electrode 1 while adding no-voltage, because the doping content in p type buried layer district 6 is far longer than N
-the doping content of drift region 3, the N of p type buried layer district 6 and carrier accumulation district A
-the PN junction Built-in potential that drift region forms makes the N between p type buried layer district 6 and silicon dioxide gate oxide 4
-drift region is that carrier accumulation district A just exhausts completely.When metallization anode 9 adds very little forward voltage with respect to metallization negative electrode 1, grooved gate electrode 5,6 ,NXing heavily doped regions 7, p type buried layer district, P type heavily doped region 8 also add positive voltage, p type buried layer district 6/N simultaneously by metallization anode 9
-the built-in barrier region of accumulation area A knot dwindles gradually, the accumulation that carrier accumulation district A produces how sub-electronics due to grid voltage biasing, and this is many electron currents mobilely provides a path for smoothness gradually, and resistance reduces gradually, diode current flow.Due to when anode adds very little forward voltage when metallizing anode 9 with respect to the negative electrode 1 that metallizes, how sub-electronics just can form path, so forward conduction voltage drop of the present invention is extremely low.When metallization anode 9 adds reverse voltage with respect to metallization negative electrode 1; during due to zero-bias, carrier accumulation district A is just depleted; the conductive path of many sub-electronics at carrier accumulation district A by pinch off; while continuing to increase reverse voltage; thereby A Jiang Yin p type buried layer district, carrier accumulation district 6, P type heavily doped region 8 and 5 three's synergy of grooved grid and further being exhausted are protected, depletion layer is by the N near metallization negative electrode 1 one sides
-reverse voltage is expanded to bear in drift region 3.Due to no-voltage biasing Shi， carrier accumulation, district A is depleted, and how sub-charge carrier does not have path, so reverse leakage current is very little.In addition during due to forward conduction, be mainly the circulation of how sub-electronics, so reverse recovery characteristic of the present invention is also relatively good.
In sum, accumulation type groove grid diode provided by the invention, by the introducing of p type buried layer 6, makes device in the situation that not affecting reverse breakdown voltage and reverse leakage current, can improve greatly forward conduction characteristic and the reverse recovery characteristic of diode.
Accompanying drawing explanation
Fig. 1 is the cross-sectional view of a kind of accumulation type groove grid diode provided by the invention.
Fig. 2 is the three-dimensional structure schematic diagram of a kind of accumulation type groove grid diode provided by the invention.
Fig. 3 is plan structure 1 schematic diagram of a kind of accumulation type groove grid diode provided by the invention.
Fig. 4 is plan structure 2 schematic diagrames of a kind of accumulation type groove grid diode provided by the invention.
In Fig. 1 to Fig. 4: the 1st, metallization negative electrode, the 2nd, N
+substrate, the 3rd, N
-drift region, the 4th, silicon dioxide gate oxide, the 5th, polygate electrodes, the 6th, bar shaped p type buried layer district, the 7th, bar shaped N-type heavily doped region, the 8th, bar shaped P type heavily doped region, the 9th, metallization anode, the 10th, P Xing Zhu district, A is carrier accumulation district.
Embodiment
A groove grid diode, its structure, as shown in Fig. 1～4, comprises N
+substrate 2, is positioned at N
+the metallization negative electrode 1 at substrate 2 back sides, is positioned at N
+the N in substrate 2 fronts
-drift region 3 and the metallization anode 9 that is positioned at whole diode top layer; At N
-outside the both sides, top of drift region 3, there is respectively 5, two grooved gate electrodes 5 of a grooved gate electrode and N
-isolated by silicon dioxide gate oxide 4 separately respectively between drift region 3; At N
-the both sides, top of drift region 3 have respectively between bar shaped N-type heavily doped region 7,7, two of bar shaped N-type heavily doped regions and have a bar shaped P type heavily doped region 8; Below bar shaped P type heavily doped region 8 and be positioned at the N of two silicon dioxide gate oxide 4 zone lines
-in drift region 3, there is bar shaped p type buried layer district 6; Between bar shaped p type buried layer district 6 and bar shaped P type heavily doped region 8, there are some P Xing Zhu districts 10 spaced apart and that be connected respectively with bar shaped P type heavily doped region 8 with bar shaped p type buried layer district 6; Metallization anode 9 is covered in two bar shaped N-type heavily doped regions 7, bar shaped P type heavily doped region 8 and two grooved gate electrode 5 surfaces.
Accumulation type groove grid diode provided by the invention, its concrete methods of realizing comprises: choose NXing<100> crystal orientation zone melting single-crystal substrate, N<sup TranNum="134">-</sup>drift region growth, p type buried layer district boron injects, N<sup TranNum="135">-</sup>drift region growth, deposit thick field oxide layer, is etched with source region, use reactive ion etching groove grid region, use dry oxygen method growth gate oxide (thickness range is 5 to 100nm), depositing polysilicon grid, P Xing Zhu district boron injects, P type heavily doped region boron injects, N-type heavily doped region arsenic injects, front-side metallization, metal etch, back face metalization, passivation etc.
Accumulation type groove grid diode provided by the invention, another kind of concrete methods of realizing comprises: choose NXing<100> crystal orientation zone melting single-crystal substrate, N<sup TranNum="137">-</sup>drift region growth, deposit thick field oxide layer, is etched with source region, use reactive ion etching groove grid region, use dry oxygen method growth gate oxide (thickness range is 5 to 100nm), depositing polysilicon grid, P Xing Zhu district boron injects, p type buried layer district boron injects, and P type heavily doped region boron injects ，NXing heavily doped region arsenic and injects, front-side metallization, metal etch, back face metalization, passivation etc.
Described bar shaped p type buried layer district 6 is by twice extension, once inject and realize separately; Or first by extension, the reticle that re-uses P type heavily doped region 8, inject and realize, implantation dosage and energy can be according to corresponding situation adjustment.
In implementation process, can as the case may be, in the situation that basic structure is constant, carry out certain accommodation design.For example: can there be Fig. 3 and two kinds of different ways of Fig. 4 in P Xing Zhu district 10.10, P Xing Zhu district shown in Fig. 3 is connected with bar shaped P type heavily doped region 8 with bar shaped p type buried layer district 6; The ，Er top that is connected with bar shaped p type buried layer district 6,10 bottoms, P Xing Zhu district shown in Fig. 4 is all connected with two bar shaped N-type heavily doped regions 7 with bar shaped P type heavily doped region 8.
The semi-conducting material replacement body silicon such as available carborundum, GaAs, indium phosphide or germanium silicon also while making device.
Adopt a kind of accumulation type groove grid diode of the present invention, in the situation that not affecting reverse breakdown voltage and reverse leakage current, can obtain low conduction voltage drop, good reverse recovery characteristic, realizes trading off between better forward conduction voltage drop and turn-off power loss.Along with the development of semiconductor technology, adopt the present invention can also make more low energy-consumption electronic device fast.
Claims (4)
1. an accumulation type groove grid diode, its structure comprises N
+substrate (2), is positioned at N
+the metallization negative electrode (1) at substrate (2) back side, is positioned at N
+the N that substrate (2) is positive
-drift region (3) and be positioned at the metallization anode (9) of whole diode top layer; It is characterized in that, at N
-outside the both sides, top of drift region (3), there is respectively a grooved gate electrode (5), two grooved gate electrodes (5) and N
-isolated by silicon dioxide gate oxide (4) separately respectively between drift region (3); At N
-the both sides, top of drift region (3) have respectively a bar shaped N-type heavily doped region (7), have a bar shaped P type heavily doped region (8) between two bar shaped N-type heavily doped regions (7); In bar shaped P type heavily doped region (8) below and be positioned at the N of two silicon dioxide gate oxides (4) zone line
-in drift region (3), there is bar shaped p type buried layer district (6); Between bar shaped p type buried layer district (6) and bar shaped P type heavily doped region (8), there are some P Xing Zhu districts (10) spaced apart and that be connected respectively with bar shaped P type heavily doped region (8) with bar shaped p type buried layer district (6); Metallization anode (9) is covered in two bar shaped N-type heavily doped regions (7), bar shaped P type heavily doped region (8) and two grooved gate electrodes (5) surface.
2. accumulation type groove grid diode according to claim 1, is characterized in that, P Xing Zhu district (10) is only connected with bar shaped P type heavily doped region (8) with bar shaped p type buried layer district (6).
3. accumulation type groove grid diode according to claim 1, is characterized in that, the ，Er top that is connected with bar shaped p type buried layer district (6), P Xing Zhu district (10) bottom is all connected with two bar shaped N-type heavily doped regions (7) with bar shaped P type heavily doped region (8).
4. a kind of accumulation type groove grid diode according to claim 1, is characterized in that, described grooved gate electrode (5) material is polysilicon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210049361.6A CN102544114B (en) | 2012-02-29 | 2012-02-29 | Accumulation type grooved-gate diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210049361.6A CN102544114B (en) | 2012-02-29 | 2012-02-29 | Accumulation type grooved-gate diode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102544114A CN102544114A (en) | 2012-07-04 |
| CN102544114B true CN102544114B (en) | 2014-01-15 |
Family
ID=46350568
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210049361.6A Expired - Fee Related CN102544114B (en) | 2012-02-29 | 2012-02-29 | Accumulation type grooved-gate diode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102544114B (en) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102820340A (en) * | 2012-08-31 | 2012-12-12 | 电子科技大学 | Shallow slot type metal oxide semiconductor diode |
| CN103441151B (en) * | 2013-08-27 | 2017-02-01 | 无锡市芯茂微电子有限公司 | Low forward voltage drop diode |
| CN103618006B (en) * | 2013-10-30 | 2017-02-01 | 国家电网公司 | A fast recovery diode and a manufacturing method thereof |
| CN104393056B (en) * | 2014-11-10 | 2017-02-15 | 电子科技大学 | Accumulating diode |
| CN105742372A (en) * | 2016-03-14 | 2016-07-06 | 电子科技大学 | Grooved-gate metal oxide semiconductor diode with adjustable threshold voltage |
| CN105932072A (en) * | 2016-07-06 | 2016-09-07 | 电子科技大学 | Accumulated diode |
| CN107170837A (en) * | 2017-06-20 | 2017-09-15 | 广微集成技术（深圳）有限公司 | A kind of semiconductor devices and manufacture method |
| CN111509075B (en) * | 2020-04-29 | 2022-03-29 | 武汉新芯集成电路制造有限公司 | Semiconductor device and method for manufacturing the same |
| CN114883417B (en) * | 2022-07-04 | 2022-10-18 | 深圳市威兆半导体股份有限公司 | Semiconductor device with conduction voltage drop self-clamping function and preparation method thereof |
| CN115295414B (en) * | 2022-10-08 | 2023-03-24 | 深圳芯能半导体技术有限公司 | Silicon-based diode manufacturing method, silicon-based diode and diode device |
| CN115312581B (en) * | 2022-10-10 | 2023-01-03 | 深圳市威兆半导体股份有限公司 | Fast recovery diode and preparation method thereof |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06314801A (en) * | 1993-03-05 | 1994-11-08 | Mitsubishi Electric Corp | Semiconductor device and manufacture thereof |
| JPH07147418A (en) * | 1993-11-25 | 1995-06-06 | Fuji Electric Co Ltd | Diode |
-
2012
- 2012-02-29 CN CN201210049361.6A patent/CN102544114B/en not_active Expired - Fee Related
Non-Patent Citations (2)
| Title |
|---|
| JP特开平6-314801A 1994.11.08 |
| JP特开平7-147418A 1995.06.06 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102544114A (en) | 2012-07-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102544114B (en) | Accumulation type grooved-gate diode | |
| CN101976687B (en) | Fast recovery metal oxide semiconductor diode with low power consumption | |
| CN102593154B (en) | Trench gate diode with P-type buried layer structure | |
| CN105810754B (en) | A kind of metal-oxide-semiconductor diode with accumulation layer | |
| CN105826399A (en) | Soft fast recovery diode of multi-mixture structure and preparation method thereof | |
| CN102709317B (en) | Low-threshold voltage diode | |
| CN116721925B (en) | SBD integrated silicon carbide SGT-MOSFET and preparation method thereof | |
| CN102064201B (en) | Shallow-slot metal oxide semiconductor diode | |
| CN105789331A (en) | Semiconductor rectifying device and manufacturing method therefor | |
| CN102779839A (en) | Insulated gate bipolar transistor (IGBT) with deep energy level impurity implantation | |
| CN105590965B (en) | A kind of adjustable planar metal oxide semiconductor diode of cut-in voltage | |
| CN105226104B (en) | A kind of SiC schottky diode and preparation method thereof | |
| CN105742372A (en) | Grooved-gate metal oxide semiconductor diode with adjustable threshold voltage | |
| CN104393055B (en) | A kind of groove-shaped diode with chinampa structure | |
| CN106298970A (en) | A kind of high-voltage high-speed soft-recovery diode and manufacture method thereof | |
| CN105957865A (en) | MOSFET (Metal Oxide Semiconductor Field Effect Transistor) integrated with trench Schottky | |
| CN106098799A (en) | A kind of accumulation type trench diode | |
| CN109119490A (en) | A kind of slot grid diode of composite construction | |
| CN109119489A (en) | A kind of metal-oxide-semiconductor diode of composite construction | |
| CN106229342A (en) | A kind of metal-oxide-semiconductor diode of many accumulation layers | |
| CN207409500U (en) | A kind of semiconductor devices | |
| CN205680688U (en) | A kind of soft fast recovery diode of polyhybird structure | |
| CN204946908U (en) | A kind of diode with high Antisurge current ability | |
| CN105932072A (en) | Accumulated diode | |
| CN215299260U (en) | Groove gate type super barrier rectifying device with low conduction voltage drop |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| ASS | Succession or assignment of patent right |
Owner name: INSTITUTE OF ELECTRONIC AND INFORMATION ENGINEERIN Effective date: 20130322 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20130322 Address after: 611731 Chengdu province high tech Zone (West) West source Avenue, No. 2006 Applicant after: University of Electronic Science and Technology of China Applicant after: Institute of Electronic and Information Engineering In Dongguan, UESTC Address before: 611731 Chengdu province high tech Zone (West) West source Avenue, No. 2006 Applicant before: University of Electronic Science and Technology of China |
|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140115 Termination date: 20200229 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |