CN102543682A - Method for forming multistage deep step - Google Patents
Method for forming multistage deep step Download PDFInfo
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- CN102543682A CN102543682A CN201210037515XA CN201210037515A CN102543682A CN 102543682 A CN102543682 A CN 102543682A CN 201210037515X A CN201210037515X A CN 201210037515XA CN 201210037515 A CN201210037515 A CN 201210037515A CN 102543682 A CN102543682 A CN 102543682A
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Abstract
The invention relates to a method for forming a multistage deep step, which comprises the following steps of: depositing a first film on a substrate; coating first photoresist, and photoetching the first photoresist to form a first wind; removing the first film within the first window through etching, and then removing the first photoresist; depositing a second film on the surface of the structure; coating second photoresist; and etching the second photoresist to form a second window, wherein the position of the second window is corresponding to that of the first window, and the width of the second window is smaller than that of the first window; removing the second film in the second window through etching, and then removing the second photoresist; etching the substrate by using the second film as a mask to form a first step on the substrate; removing the second film, and etching the substrate by using the first film as a mask to form a second step on the substrate; and removing the first film. In the method, multiple films are respectively used as etching baffle layers for each step, the problem of limited step length and steps is solved, and a multistage deep step structure of a single material is made.
Description
Technical field
The present invention relates to technical field of semiconductors, particularly a kind of formation method of multistage dark step.
Background technology
In the manufacturing process of some semiconductor device, need on substrate, form darker (micron order) some grades of steps, to form specific structure, realize some performance.This structure is generally used for devices such as MEMS.
For the realization of this multistage ledge structure, can adopt following dual mode usually: a kind of is deposit plural layers on substrate, through the etching of film with graphically obtain the ledge structure of multiple material; A kind of in addition is directly substrate to be carried out etching, obtains the multistage ledge structure of homogenous material.
If adopt first kind of mode, i.e. deposit plural layers, to the step of the multiple material of up one-tenth, when length of bench when big (greater than 1mm), the less stable of this ledge structure comes off easily; And the film more than the deposit number micron, cost is high, and technology difficulty is big.
If adopt the second way, i.e. directly repeatedly photoetching on substrate, the method for etching forms step downwards, then can obtain the ledge structure of homogenous material.The second way has better stability with respect to first kind of mode.If but step dark excessively (several microns), for the gluing photoetching to descend the etching of one deck step, not only need very thick photoresist, and even whirl coating, thereby cause litho pattern to be out of shape even problems such as can't develop.So step is restricted.
Summary of the invention
The formation method that the purpose of this invention is to provide a kind of multistage dark step is to provide the darker multistage ledge structure of homogenous material.
Technical solution of the present invention is the formation method of the dark step of a kind of multilayer, may further comprise the steps:
On substrate, deposit the first film;
Apply first photoresist, photoetching forms first window;
Etching is removed the first film in first window, removes first photoresist then;
At said structure surface deposition second film;
Apply second photoresist, photoetching forms second window, and said second window and width corresponding with first position of window is less than first window;
Etching is removed second film in second window, removes second photoresist then;
With second film is the mask etching substrate, forms first step;
Removing second film, is the mask etching substrate with the first film, forms second step;
Remove the first film.
As preferably: the material of said the first film is silica or silicon nitride or titanium nitride or aluminium oxide.
As preferably: the material of said second film is silica or silicon nitride or titanium nitride or aluminium oxide.
As preferably: the first film in etching first window also is included in said structure surface deposition one deck resilient coating after removing the first photoresist step; And
The step that said etching is removed second film in second window comprises that etching removes second film and the resilient coating in second window;
The step of said removal second film comprises removes second film and resilient coating.
As preferably: the material of said resilient coating is boron-phosphorosilicate glass or phosphorosilicate glass.
As preferably: the degree of depth of said first step is 1 μ m-100 μ m.
As preferably: the degree of depth of said second step is 1 μ m-100 μ m.
As preferably: chemical vapor deposition mode or sputter mode are adopted in the said the first film and second thin film deposition.
Compared with prior art, the etching barrier layer that the present invention adopts plural layers to make as every grade of step has respectively solved the limited problem of length of bench and step, produces the multistage dark ledge structure of homogenous material.
Description of drawings
Fig. 1 is the flow chart of the formation method of the multistage dark step of the present invention.
Fig. 2 a-2n is the profile of each processing step in the formation method of the multistage dark step of the present invention.
Embodiment
The present invention below will combine accompanying drawing to do further to detail:
A lot of details have been set forth in the following description so that make much of the present invention.But the present invention can implement much to be different from alternate manner described here, and those skilled in the art can do similar popularization under the situation of intension of the present invention, so the present invention does not receive the restriction of following disclosed practical implementation.
Secondly, the present invention utilizes sketch map to be described in detail, when the embodiment of the invention is detailed; For ease of explanation; The profile of expression device architecture can be disobeyed general ratio and done local the amplification, and said sketch map is instance, and it should not limit the scope of the present invention's protection at this.The three dimensions size that in actual fabrication, should comprise in addition, length, width and step.
Fig. 1 shows the flow chart of the formation method of the multistage dark step of the present invention.
See also shown in Figure 1, in the present embodiment,
In step 101; Shown in Fig. 2 a; Deposition the first film 201 on substrate 200; The material of said substrate 200 is silicon or germanium, and to be silica or silicon nitride or titanium nitride or aluminium oxide etc. have the material of higher selection ratio to substrate to the material of said the first film 201, and said the first film 201 is a single or multiple lift.The material of said the first film 201 adopts the LPCVD mode during for silicon dioxide; The material of said the first film 201 adopts the PECVD mode during for silicon nitride; When being titanium nitride or aluminium oxide, adopts the material of said the first film 201 sputtering method; In the present embodiment, said the first film 201 is a silicon dioxide, and said the first film 201 adopts the LPCVD deposition;
In step 102, shown in Fig. 2 b, apply first photoresist 202, shown in Fig. 2 c, photoetching forms the first window 202a;
In step 103, shown in Fig. 2 d, etching is removed the first film 201 in the first window 202a, shown in Fig. 2 e, removes first photoresist 202;
In step 104; Shown in Fig. 2 f; At said structure surface deposition second film 203, to be silicon dioxide or silicon nitride or titanium nitride or aluminium oxide etc. have the material of higher selection ratio to substrate to the material of said second film 203, and said the first film 203 is a single or multiple lift.The material of said second film 203 can be identical with the first film 201, also can be different with the first film 201.The material of said second film 203 adopts the LPCVD mode during for silicon dioxide; The material of said second film 203 adopts the PECVD mode during for silicon nitride; When being titanium nitride or aluminium oxide, adopts the material of said second film 203 sputtering method; In the present embodiment, said second film 203 is a silicon nitride, and said second film 203 adopts the PECVD mode;
In step 105, shown in Fig. 2 g, apply second photoresist 204, shown in Fig. 2 h, photoetching forms the second window 204a, and the said second window 204a and width corresponding with the position of the first window 202a is less than the first window 202a;
In step 106, shown in Fig. 2 i, etching is removed second film 203 in the second window 204a, shown in Fig. 2 j, removes second photoresist 204;
In step 107, shown in Fig. 2 k, be mask etching substrate 200 with second film 203, on substrate 200, form first step 205, the degree of depth of said first step 205 is 1 μ m-100 μ m, the degree of depth of said in the present embodiment first step 205 is 1 μ m;
In step 108, shown in Fig. 2 l, remove second film 203; Can adopt the phosphoric acid solution wet method to remove second film 203, also can adopt dry etching to remove second film 203, shown in Fig. 2 m; With the first film 203 is mask etching substrate 200, on substrate, forms second step 206, when etching forms second step 206; The first step 205 synchronously downward same degree of depth of etching on the substrate; The degree of depth of said second step 206 is 1 μ m-100 μ m, and in the present embodiment, the degree of depth of said second step 206 is 9 μ m;
In step 109, shown in Fig. 2 n, remove the first film 201, obtain the multistage dark step on the substrate 200 thus, can adopt oxide layer corrosion buffer solution (BOE) wet method to remove the first film 201, also can adopt dry etching to remove the first film 201.
Present embodiment has only been set forth the formation method of two-layer step, the invention is not restricted to this, can form the more step of multilayer; In the manufacturing process of many steps, can use silicon dioxide or different materials such as silicon nitride or titanium nitride or aluminium oxide to cover repeatedly, form the multilayer barrier layer; In order to guarantee that the current layer film does not influence other layer same material film; When deposit film, need cover the topmost thin film figure fully,, cause back layer film spreadability bad if the barrier layer step that preceding layer film forms is higher; Can be behind anterior layer film pattern formation barrier layer; Thin-film material is as resilient coating preferably to increase one deck spreadability, and said resilient coating is the while etching in the etching process of subsequent thin film, removes simultaneously in the film removal process; The material of said resilient coating is boron-phosphorosilicate glass or phosphorosilicate glass, can adopt the hydrofluoric acid wet method to remove resilient coating.
The length of said first step 205 is by the width decision of the second window 204a; The length of said second step 206 is decided by the stand out of the first window 202a and the second window 204a, can control length of bench through the width of controlling first window and second window.
The etching barrier layer that the present invention adopts plural layers to make as every layer of step has respectively solved the limited problem of length of bench and step, produces the multistage dark ledge structure of homogenous material.
The above is merely preferred embodiment of the present invention, and all equalizations of being done according to claim scope of the present invention change and modify, and all should belong to the covering scope of claim of the present invention.
Claims (8)
1. the formation method of the dark step of multilayer is characterized in that, may further comprise the steps:
On substrate, deposit the first film;
Apply first photoresist, photoetching forms first window;
Etching is removed the first film in first window, removes first photoresist then;
At said structure surface deposition second film;
Apply second photoresist, photoetching forms second window, and said second window and width corresponding with first position of window is less than first window;
Etching is removed second film in second window, removes second photoresist then;
With second film is the mask etching substrate, on substrate, forms first step;
Removing second film, is the mask etching substrate with the first film, on substrate, forms second step;
Remove the first film.
2. the formation method of the dark step of multilayer according to claim 1 is characterized in that: the material of said the first film is silica or silicon nitride or titanium nitride or aluminium oxide.
3. the formation method of the dark step of multilayer according to claim 1 is characterized in that: the material of said second film is for being silica or silicon nitride or titanium nitride or aluminium oxide.
4. the formation method of the dark step of multilayer according to claim 1 is characterized in that: after removing the step of first photoresist, before the step of deposition second film, also be included in said structure surface deposition one deck resilient coating; And
The step that said etching is removed second film in second window comprises that etching removes second film and the resilient coating in second window;
The step of said removal second film comprises removes second film and resilient coating.
5. the formation method of the dark step of multilayer according to claim 4 is characterized in that: the material of said resilient coating is boron-phosphorosilicate glass or phosphorosilicate glass.
6. the formation method of the dark step of multilayer according to claim 1 is characterized in that: the degree of depth of said first step is 1 μ m-100 μ m.
7. the formation method of the dark step of multilayer according to claim 1 is characterized in that: the degree of depth of said second step is 1 μ m-100 μ m.
8. the formation method of the dark step of multilayer according to claim 1 is characterized in that: chemical vapor deposition mode or sputter mode are adopted in the said the first film and second thin film deposition.
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| CN201210037515XA CN102543682A (en) | 2012-02-17 | 2012-02-17 | Method for forming multistage deep step |
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| CN201210037515XA CN102543682A (en) | 2012-02-17 | 2012-02-17 | Method for forming multistage deep step |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103303860A (en) * | 2013-05-10 | 2013-09-18 | 西安交通大学 | Method for generating 0-50nm of random-height nano step on surface of Si |
| CN106904567A (en) * | 2015-12-23 | 2017-06-30 | 中芯国际集成电路制造(上海)有限公司 | A kind of semiconductor devices and preparation method thereof, electronic installation |
| CN107546114A (en) * | 2017-09-07 | 2018-01-05 | 中国工程物理研究院电子工程研究所 | A kind of preparation method of SiC Junction Termination of High Voltage Power Devices |
| CN113802163A (en) * | 2021-08-18 | 2021-12-17 | 陕西师范大学 | Preparation method of alumina micro-step and nano-pore composite structure |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1438544A (en) * | 2003-02-28 | 2003-08-27 | 北京大学 | Method for deep etching multi-layer high depth-width-ratio silicon stairs |
| CN102067289A (en) * | 2008-06-17 | 2011-05-18 | 株式会社爱发科 | Method for manufacturing multistep substrate |
-
2012
- 2012-02-17 CN CN201210037515XA patent/CN102543682A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1438544A (en) * | 2003-02-28 | 2003-08-27 | 北京大学 | Method for deep etching multi-layer high depth-width-ratio silicon stairs |
| CN102067289A (en) * | 2008-06-17 | 2011-05-18 | 株式会社爱发科 | Method for manufacturing multistep substrate |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103303860A (en) * | 2013-05-10 | 2013-09-18 | 西安交通大学 | Method for generating 0-50nm of random-height nano step on surface of Si |
| CN106904567A (en) * | 2015-12-23 | 2017-06-30 | 中芯国际集成电路制造(上海)有限公司 | A kind of semiconductor devices and preparation method thereof, electronic installation |
| CN106904567B (en) * | 2015-12-23 | 2018-09-21 | 中芯国际集成电路制造(上海)有限公司 | A kind of semiconductor devices and preparation method thereof, electronic device |
| CN107546114A (en) * | 2017-09-07 | 2018-01-05 | 中国工程物理研究院电子工程研究所 | A kind of preparation method of SiC Junction Termination of High Voltage Power Devices |
| CN107546114B (en) * | 2017-09-07 | 2020-01-03 | 中国工程物理研究院电子工程研究所 | Preparation method of junction terminal of SiC high-voltage power device |
| CN113802163A (en) * | 2021-08-18 | 2021-12-17 | 陕西师范大学 | Preparation method of alumina micro-step and nano-pore composite structure |
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Application publication date: 20120704 |