CN102543645B - Faraday shield and plasma processing device - Google Patents
Faraday shield and plasma processing device Download PDFInfo
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- CN102543645B CN102543645B CN201010603743.XA CN201010603743A CN102543645B CN 102543645 B CN102543645 B CN 102543645B CN 201010603743 A CN201010603743 A CN 201010603743A CN 102543645 B CN102543645 B CN 102543645B
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- faraday shield
- bent back
- back portion
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Abstract
The invention provides a faraday shield and a plasma processing device. The faraday shield comprises n plates, wherein n is an integer larger than or equal to 1. The connection end of two adjacent plates or two connection ends of one plate are connected to form connection portions which are not contacted, the connection end of each plate is provided with bending portions which form a space with one end open, the two bending portions located on the connection portion are mutually arranged in embedding mode to enable the connection portion to form a bending channel. Therefore, the faraday shield can effectively prevent plasma from depositing to the inner wall of a chamber and reduces possibility of the faraday shield to form a circulation. Further, the faraday shield is low in manufacture cost and installation requirement accuracy.
Description
Technical field
The invention belongs to plasma processing device field, relate to a kind of Faraday shield and the plasma processing device containing this screening arrangement.
Background technology
Be usually used in making semiconductor device at inductively coupled plasma process equipment.Fig. 1 is the structure diagram of inductively coupled plasma process equipment.Refer to Fig. 1, inductively coupled plasma process equipment comprises chamber 4, coil 5 and Faraday shield 1, and coil 5 is looped around the outside of chamber 4, and is connected with radio-frequency power supply 7 by matching network 6.Faraday shield is placed on the inner side of chamber 4, for reducing the capacitive coupling between coil and plasma, to reduce the inwall of charged ion etch chamber, prevents the inwall of plasma contamination chamber simultaneously.Faraday shield 1 is the cylinder of a non-closed, the circulation produced to avoid Faraday shield (i.e. induced current) and affect couple RF energy to plasma, and wherein non-closed place all engages in non-electric-connecting mode.Fig. 2 is the sectional view of the bonding station of Faraday shield.Refer to Fig. 2, be provided with seam 2 at the bonding station of Faraday shield 1, arrange at seam 2 place and make isolator 3 by insulating material, pass seam 2 for preventing plasma and deposit to chamber inner wall.
In the process of inductively coupled plasma process equipment implementing process, plasma is easily deposited on the surface of isolator 3 and forms a conductive layer, make Faraday shield 1 in seam 2 place's conducting, this will make to form circulation in Faraday shield 1, thus affect couple RF energy to plasma.In addition, plasma-deposited to chamber 4 inwall in order to effectively prevent, isolator 3 and Faraday shield 1 need to contact well, this not only adds the manufacturing cost of Faraday shield 1, and, to the machining accuracy of isolator 3 and installation accuracy requirement higher.
Summary of the invention
The present invention is exactly the above-mentioned defect for existing in inductively coupled plasma equipment, provides a kind of Faraday shield, and it not only can avoid Faraday shield in seam crossing conducting, but also can reduce processing cost and the installation accuracy requirement of Faraday shield.
In addition, the present invention also provides a kind of plasma processing device, and it can avoid Faraday shield to form the problem of circulation because of conducting, and low cost of manufacture, installation accuracy requires low.
The technical scheme adopted solved the problems of the technologies described above is to provide a kind of Faraday shield, comprise n block sheet material, wherein, n be more than or equal to 1 integer, the abutting end of adjacent two blocks of described sheet materials or two abutting ends of one block of described sheet material engage and form discontiguous junction surface, the abutting end of described sheet material is provided with bent back portion, described bent back portion forms the space of one end open, is positioned at two mutually nested settings of described bent back portion at described junction surface and makes described junction surface form bending passage.
Wherein, two the described bent back portion being positioned at described junction surface embed the space that the other side is formed mutually.
Wherein, described bent back portion comprises extension, connecting portion and rebate, and described extension is connected with described sheet material, and described rebate is contrary with the bearing of trend of described extension, and described extension is connected with described rebate by described connecting portion.
Wherein, the angle of described extension and described sheet material place plane is-150 ° ~ 150 °.
Wherein, the free end of described rebate is close to described extension.
Wherein, be also provided with in the mutually nested position of described bent back portion the isolator be made up of insulating material.
The present invention also provides a kind of plasma processing device, comprise chamber, coil and Faraday shield, described coil encircling is in the outside of described chamber, and described Faraday shield is nested with the inner side at described chamber, and described Faraday shield adopts described Faraday shield provided by the invention.
The present invention has following beneficial effect:
Faraday shield provided by the invention adopts the bent back portion of two mutually nested settings at junction surface, not only can effectively prevent plasma from passing the junction surface of Faraday shield and depositing to the inwall of chamber; And, can thoroughly solve the problem causing junction surface conducting because of the deposition of plasma, thus reduce the possibility that Faraday shield forms circulation, and then be coupled to plasma with making the energy stabilization of radio-frequency power supply.In addition, because junction surface does not need setting to be similar to the stop members such as isolator, therefore, the cost of manufacture of Faraday shield can be reduced and reduce the requirement of installing Faraday shield precision.
Similarly, plasma processing device provided by the invention adopts Faraday shield provided by the invention, the junction surface not only effectively preventing plasma from passing Faraday shield deposits to the inwall of chamber, but also the possibility that Faraday shield forms circulation can be reduced, thus make the Energy Coupling of radio-frequency power supply to plasma.In addition, plasma processing device provided by the invention also has the low feature of processing cost requirement that is low and installation accuracy.
Accompanying drawing explanation
Fig. 1 is the structure diagram of inductively coupled plasma process equipment;
Fig. 2 is the sectional view of Faraday shield joint place;
Fig. 3 is the vertical view figure of Faraday shield provided by the invention;
Fig. 4 is the sectional view of Faraday shield joint place provided by the invention;
Fig. 5 is the sectional view of another kind of bent back portion provided by the invention;
Fig. 6 is the sectional view of another bent back portion provided by the invention; And
Fig. 7 is the sectional view of another Faraday shield joint place provided by the invention.
Embodiment
For making those skilled in the art understand technical scheme of the present invention better, below in conjunction with accompanying drawing, Faraday shield provided by the invention and plasma processing device are described in detail.
Fig. 3 is the structure chart of Faraday shield provided by the invention, and Fig. 4 is the sectional view of Faraday shield joint place provided by the invention.See also Fig. 3 and Fig. 4, Faraday shield is that at the junction surface of sheet material 11, namely two ends of sheet material 11 are respectively provided with a bent back portion, and the bent back portion of this enforcement specifically can be a hook-shaped bent back portion by bending columnar structured of one block of sheet material 11.
Wherein, the first bent back portion 12 comprises extension 121, connecting portion 122 and rebate 123, and wherein, extension 121 is connected with sheet material 11, and extension 121 is 0 ° with the angle α of sheet material 11 place plane, i.e. extension 121 and sheet material 11 place plane parallel.Rebate 123 is arranged on the inner side of Faraday shield and contrary with the bearing of trend of extension 121, and connecting portion 122 is for connecting extension 121 and rebate 123.Extension 121, connecting portion 122 and rebate 123 form the space of one end open in the inner side of Faraday shield.
Second back banding portion 13 comprises extension 131, connecting portion 132 and rebate 133, and be with the first bent back portion 12 difference, rebate 133 is arranged on the outside of Faraday shield.Thus make extension 131, connecting portion 132 and rebate 133 form the space of one end open in the outside of Faraday shield.
When installing Faraday shield, in the space that the opening part embedding second back banding portion 13 of the rebate 123 of the first bent back portion 12 from second back banding portion 13 is formed, accordingly, the rebate 133 in second back banding portion 13 is embedded in the space that the first bent back portion 12 formed from the opening part of the first bent back portion 12, and, the first bent back portion 12 is kept not contact with second back banding portion 13, thus form bending passage at the junction surface of Faraday shield, namely the passage of " three-back-shaped " is similar to, thus increase the path of plasma through Faraday shield junction surface, and then reduce, avoid plasma-deposited to chamber inner wall even completely.
In order to reduce the plasma-deposited possibility to chamber inner wall, the free end of rebate 123 is towards extension 121 close (inclination), when two bent back portion embed in the space that the other side formed mutually, the bending channel at junction surface can be made narrower towards the rebate 123 that extension 121 is close, thus more effectively barrier plasma deposit to chamber inner wall.
Be understood that, the rebate 123 of the present embodiment can also be roundabout towards extension 121 further, that is, make the free end of rebate 123 again roundabout towards extension 121 direction, with make above-mentioned junction surface to form bending passage be labyrinth-like.Fig. 6 is the sectional view of another bent back portion provided by the invention.Refer to Fig. 6, roundabout towards extension 121 direction further at the free end of rebate 123, increase the roundabout number of times of rebate 123, like this, the complexity of the passage at junction surface can be increased further, thus increase the path of plasma through Faraday shield junction surface.
In the present embodiment, extension 121 is 0 ° with the angle α of sheet material 11, but, extension 121 and the angle α of sheet material 11 place plane can be-150 ° ~+150 ° arbitrarily angled, as ± 15 °, ± 30 °, ± 45 °, ± 90 ° or ± 135 °, wherein, "+" represents that bent back portion rotates counterclockwise relative to sheet material 11, and "-" represents that bent back portion rotates clockwise relative to sheet material 11.As shown in Figure 5, extension 121 is-90 ° with the angle α of sheet material 11.
By the mutually nested cooperation of the first bent back portion 12 with second back banding portion 13, the bonding station that not only can effectively prevent plasma from passing Faraday shield deposits to the inwall of chamber; And, because the first bent back portion 12 does not directly contact with second back banding portion 13, any other parts first bent back portion 12 be connected with second back banding portion 13 are not set yet, therefore, thoroughly can avoid the conduction problem at junction surface, thus reduce the possibility that Faraday shield forms circulation, and then reduce the energy loss of radio-frequency power supply.In addition, the Faraday shield that the present embodiment provides can prevent plasma-deposited to chamber inner wall without the need to increasing isolator, therefore, can reduce the cost of manufacture of Faraday shield and reduce the requirement of installation accuracy.
As the modification of the present embodiment, Fig. 7 is the sectional view of another Faraday shield joint place provided by the invention.Refer to Fig. 7, arrange the isolator 14 be made up of insulating material in the junction of sheet material 11, particularly, the rebate 123 of the first bent back portion 12 arranges isolator 14 with the relative position of the rebate 133 in second back banding portion 13.Isolator 14 is fixed between the first bent back portion 12 and second back banding portion 13 by bonding way or with securing member.Isolator 14 can, by unique channel blockage at " three-back-shaped " junction surface, can prevent plasma-deposited to chamber inner wall so further.In addition, other structure of the present embodiment is identical with above-described embodiment, repeats no more here.
It should be noted that, above-described embodiment Faraday shield forms by one block of sheet material is bending, but the present invention is not limited thereto, and Faraday shield also can form by multi-sheets is bending, is namely combined by n block sheet material, wherein, n be more than or equal to 1 integer.When Faraday shield is made up of n block sheet material, the end of every block sheet material all adopts the bent back portion described in the present embodiment.The bent back portion that the bonding station of the Faraday shield combined adopts the present embodiment to provide forms the junction surface of " three-back-shaped ".
The present embodiment also provides a kind of plasma processing device, comprise chamber, coil and Faraday shield, coil encircling is in the outside of chamber, Faraday shield to be nested with inside chamber and near the inwall of chamber, for reducing various particle bombardment chamber inner wall in plasma, the Faraday shield that described Faraday shield adopts above-described embodiment to provide.
The plasma processing device that the present embodiment provides, not only prevents the plasma-deposited inner side to chamber effectively, but also can reduce the possibility that Faraday shield forms circulation, thus reduces the energy loss causing radio-frequency power supply because of capacitive coupling.In addition, the cost of manufacture of this plasma processing device is low and low to the requirement of installation accuracy.
Be understandable that, the illustrative embodiments that above execution mode is only used to principle of the present invention is described and adopts, but the present invention is not limited thereto.For those skilled in the art, without departing from the spirit and substance in the present invention, can make various modification and improvement, these modification and improvement are also considered as protection scope of the present invention.
Claims (7)
1. a Faraday shield, comprise n block sheet material, wherein, n be more than or equal to 1 integer, the abutting end of adjacent two blocks of described sheet materials or two abutting ends of one block of described sheet material engage and form discontiguous junction surface, and it is characterized in that, the abutting end of described sheet material is provided with bent back portion, described bent back portion forms the space of one end open, is positioned at two mutually nested settings of described bent back portion at described junction surface and makes described junction surface form bending passage.
2. screening arrangement according to claim 1, is characterized in that, two the described bent back portion being positioned at described junction surface embed the space that the other side is formed mutually.
3. screening arrangement according to claim 2, it is characterized in that, described bent back portion comprises extension, connecting portion and rebate, described extension is connected with described sheet material, described rebate is contrary with the bearing of trend of described extension, and described extension is connected with described rebate by described connecting portion.
4. screening arrangement according to claim 3, it is characterized in that, the angle of described extension and described sheet material place plane is-150 ° ~ 150 °.
5. screening arrangement according to claim 3, it is characterized in that, the free end of described rebate is close to described extension.
6. screening arrangement according to claim 1, is characterized in that, be also provided with in the mutually nested position of described bent back portion the isolator be made up of insulating material.
7. a plasma processing device, comprise chamber, coil and Faraday shield, described coil encircling is in the outside of described chamber, described Faraday shield is nested with the inner side at described chamber, it is characterized in that, described Faraday shield adopts Faraday shield described in claim 1-6 any one.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010603743.XA CN102543645B (en) | 2010-12-14 | 2010-12-14 | Faraday shield and plasma processing device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201010603743.XA CN102543645B (en) | 2010-12-14 | 2010-12-14 | Faraday shield and plasma processing device |
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| CN102543645A CN102543645A (en) | 2012-07-04 |
| CN102543645B true CN102543645B (en) | 2015-07-01 |
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| CN201010603743.XA Active CN102543645B (en) | 2010-12-14 | 2010-12-14 | Faraday shield and plasma processing device |
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Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103820758B (en) * | 2012-11-19 | 2016-08-31 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Physical vapor deposition device |
| CN107301943A (en) * | 2017-07-27 | 2017-10-27 | 北京北方华创微电子装备有限公司 | Faraday shield and reaction chamber |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0801413A1 (en) * | 1996-03-12 | 1997-10-15 | Varian Associates, Inc. | Inductively coupled plasma reactor with faraday-sputter shield |
| CN1265222A (en) * | 1997-04-21 | 2000-08-30 | 东京电子亚利桑那公司 | Method and appts. for ionized sputtering of materials |
| US6117279A (en) * | 1998-11-12 | 2000-09-12 | Tokyo Electron Limited | Method and apparatus for increasing the metal ion fraction in ionized physical vapor deposition |
| CN101015034A (en) * | 2004-04-02 | 2007-08-08 | 瓦里安半导体设备公司 | Faraday dose and uniformity monitor for plasma based ion implantion |
| CN101312143A (en) * | 2007-05-22 | 2008-11-26 | 东京毅力科创株式会社 | Carrying bench and plasma treating device using the same |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101001743B1 (en) * | 2003-11-17 | 2010-12-15 | 삼성전자주식회사 | Ionized physical vapor deposition apparatus using helical self-resonant coil |
| KR101841236B1 (en) * | 2009-04-03 | 2018-03-22 | 어플라이드 머티어리얼스, 인코포레이티드 | High pressure rf-dc sputtering and methods to improve film uniformity and step-coverage of this process |
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- 2010-12-14 CN CN201010603743.XA patent/CN102543645B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0801413A1 (en) * | 1996-03-12 | 1997-10-15 | Varian Associates, Inc. | Inductively coupled plasma reactor with faraday-sputter shield |
| CN1265222A (en) * | 1997-04-21 | 2000-08-30 | 东京电子亚利桑那公司 | Method and appts. for ionized sputtering of materials |
| US6117279A (en) * | 1998-11-12 | 2000-09-12 | Tokyo Electron Limited | Method and apparatus for increasing the metal ion fraction in ionized physical vapor deposition |
| CN101015034A (en) * | 2004-04-02 | 2007-08-08 | 瓦里安半导体设备公司 | Faraday dose and uniformity monitor for plasma based ion implantion |
| CN101312143A (en) * | 2007-05-22 | 2008-11-26 | 东京毅力科创株式会社 | Carrying bench and plasma treating device using the same |
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| CN102543645A (en) | 2012-07-04 |
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Address after: 100176 Beijing economic and Technological Development Zone, Wenchang Road, No. 8, No. Patentee after: Beijing North China microelectronics equipment Co Ltd Address before: 100015, M5 building, No. 1 Jiuxianqiao East Road, Beijing, Chaoyang District, two South Patentee before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |
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