CN102543170B - Method for realizing low power consumption of phase change memory - Google Patents
Method for realizing low power consumption of phase change memory Download PDFInfo
- Publication number
- CN102543170B CN102543170B CN201210036641.3A CN201210036641A CN102543170B CN 102543170 B CN102543170 B CN 102543170B CN 201210036641 A CN201210036641 A CN 201210036641A CN 102543170 B CN102543170 B CN 102543170B
- Authority
- CN
- China
- Prior art keywords
- current
- time
- resistance
- reset
- phase transition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Semiconductor Memories (AREA)
Abstract
The invention discloses a method for realizing lower power consumption of a phase change memory, comprising the following steps of: A, carrying out electric property detection on a material of the phase change memory, so as to obtain first time of changing resistance of the phase change memory from high to low and a first maximum current and a first minimum current which are used for retaining a crystallization temperature of a phase change material, second time of changing the resistance of the phase change memory from low to high and a second maximum current and a second minimum current which are used for retaining a fusion temperature of the phase change material; and B, when the phase change memory is set (SET), inputting a SET current, wherein the SET current is gradually increased from the first minimum current to the first maximum current within the first time and then is gradually decreased to 0; and when the phase change memory is reset (RESET), inputting a RESET current to the phase change memory, wherein the RESET current is gradually decreased from the second maximum current to the second minimum current and is switched off. With the adoption of the method disclosed by the invention, the power consumption of the phase change memory can be obviously reduced.
Description
Technical field
The present invention relates to phase transition storage, particularly a kind of method that realizes low power consumption of phase change memory.
Background technology
Along with the develop rapidly of nanometer technology, it is more and more less that the size of storer also becomes.CMOS technique integrated level promote background under, phase transition storage since late 1960s propose after, the swift and violent development of having got back.In numerous storeies, phase transition storage has embodied at a high speed, the characteristic of low pressure and low-power consumption.
The performance of phase transition storage determined by the phase-state change of reversible phase-change material, reaches high resistant and two kinds of different electrical state of low-resistance of material by realizing noncrystal and realization polycrystal two states.Conventionally with amorphous state presentation logic " 1 ", crystalline state presentation logic " 0 " is stored data.
If need to be to phase transition storage data writing, to make the transformation of phase transition storage generation amorphous state to crystalline state, or make phase transition storage generation crystalline state to amorphous transformation, need to input a set operation (SET) electric current to phase-change material, or replacement operation (RESET) electric current of input.
Operate corresponding temperature requirement in order to meet SET operation and RESET, desirable be carried in power waveform on phase transition storage as shown in Figure 1a.Traditional method is that the SET and the RESET current waveform that utilize current mirror to produce are as shown in Figure 2 a realized corresponding power consumption demand.As shown in Figure 2 a, no matter be SET electric current or RESET electric current, the process of time from initial time t20 to t22 or from t20 to t21, the current value I that heating part flows through
aor I
bconstant.Wherein, SET electric current also have from t22 to t23 one be reduced to gradually 0 process, RESET electric current turn-offs rapidly at t21, reduces to 0.
As shown in Figure 2 b, the resistance (R in SET/RESET process of phase transition storage
h/ R
l) be to change along with the variation of time.Like this, the power consumption of generation as shown in Figure 2 c: at resistance (R
h/ R
l) in the process that changes, the power of generation just correspondingly changes with resistance variations.
In order to meet resistance value lower in the situation that, temperature still can reach the temperature of crystallization, therefore choosing of constant current value can be larger, the power that can reach taking low resistance resistance is selection of datum, so just can ensure no matter how resistance changes temperature or the above temperature of fusing that can maintain more than crystallization.
From Fig. 2 c, when resistance value is become high resistant or becomes from high resistance low-resistance process from low resistance, there will be a part of power consumption just to produce heat, these power consumptions belong to redundancy power consumption.And the rank that high resistance and low-resistance resistance differ in the technological level of present stage is more than 1000 times, so the redundant power producing is also just very large.
Summary of the invention
In view of this, fundamental purpose of the present invention is to provide a kind of method that realizes low power consumption of phase change memory.
The invention provides a kind of method that realizes low power consumption of phase change memory, comprise: A, the material of a phase transition storage is carried out to electrical property detection, obtain: very first time that the resistance of this phase transition storage is changed to low resistance by high resistance and maintain the first maximum current and first minimum current of phase-change material Tc; And the resistance of this phase transition storage the second time being changed to high resistance by low resistance and the second maximum current and the second minimum current that maintain phase-change material temperature of fusion.
When B, execution set (SET) operation, to this phase transition storage input SET electric current, this SET electric current increases to gradually described the first maximum current from described the first minimum current within the described very first time, is then reduced to gradually 0; Carry out while resetting (RESET) operation, to this phase transition storage input RESET electric current, this RESET electric current turn-offs within described the second time from described the second maximum current reduces to described the second minimum current gradually.
Preferably, described to the material of phase transition storage carry out electrical property detect be: by experiment the material of phase transition storage is detected.
Preferably, in steps A further by the very first time, the first maximum current and the first minimum current, substitution formula (1):
I＝I
aa+k
1t (1)
Calculate the rate of rise k of SET electric current
1; Wherein: Iaa substitution the first minimum current, I substitution the first maximum current, the t substitution very first time.
The electric current of SET described in step B increases to gradually described the first maximum current from described the first minimum current within the described very first time: will calculate the rate of rise k of SET electric current
1, initial current Iaa and current time t substitution formula (1); Obtain the current value I in each moment; Described initial current Iaa is set to the first minimum current.
Preferably, in steps A, further detect the high resistance R of phase transition storage
hwith low-resistance value R
l; In step B, establishing SET current maxima is Ia,
I
aawith I
aproportionate relationship be greater than or equal to
Preferably, in steps A further by the second time, the second maximum current and the second minimum current, substitution formula (2):
I＝I
b-k
2t (2)
Calculate the descending slope k of RESET electric current
2; Wherein: I
bsubstitution the second maximum current, I substitution the second minimum current, the second time of t substitution.
The electric current of RESET described in step B turn-offs within described the second time from described the second maximum current reduces to described the second minimum current gradually: will calculate rate of rise k2, the second maximum current I of RESET electric current
bwith current time t substitution formula (2), obtain the current value I in each moment; And in the time that the second time arrived, turn-off RESET electric current.
Preferably, in step B, establishing RESET current minimum is I
bb,
I
bbwith I
bproportionate relationship be greater than or equal to
Preferably, in described steps A, the different fall time further writing by change, by phase-change material during form different resistance values record, connect into straight line by meeting the resistance of needed maximum in side circuit and minimum resistance, or get the wherein average line of numerical value, obtain the resistance variations slope k of phase transition storage in SET and RESET process
rand k
f.
The resistance variations curve of phase transition storage in SET and RESET process is respectively formula (3) and formula (4):
R＝R
H-k
rt (3)；
R＝R
L+k
ft (4)；
In described step B, the resistance variations slope k by phase transition storage in SET and RESET process
rand k
f, high resistance R
h, low-resistance value R
lwith current time t substitution formula (3) and (4) respectively, obtain the resistance value R in each moment in SET and RESET process, draw power diagram in order to the power that calculates each moment.
As seen from the above technical solutions, this method that realizes low power consumption of phase change memory of the present invention, according to the electrical property testing result to phase-change memory material, in the time carrying out SET operation, SET electric current to phase transition storage input from little to large variation, in the time carrying out RESET operation, the RESET electric current to phase transition storage input from large to little variation.Because the present invention is the electrical property testing result according to phase-change memory material, to corresponding SET electric current and the RESET electric current changing of phase transition storage input, facts have proved, compared with prior art obviously reduce power consumption.
Brief description of the drawings
Fig. 1 is the ideal waveform figure of SET electric current and RESET current power;
Fig. 2 a is the oscillogram of prior art SET electric current and RESET electric current;
Fig. 2 b is the resistance variations figure of prior art phase transition storage in SET/RESER process;
Fig. 2 c is the power diagram of prior art SET electric current and RESET electric current;
Fig. 3 a is the process flow diagram to SET current processing in a preferred embodiment of the present invention;
Fig. 3 b is the process flow diagram to RESET current processing in Fig. 3 a illustrated embodiment;
Fig. 4 a is SET electric current and RESET current waveform figure in Fig. 3 a illustrated embodiment;
Fig. 4 b is the resistance variations figure of phase transition storage in SET/RESER process in Fig. 3 a illustrated embodiment;
Fig. 4 c is the power diagram of SET electric current and RESET electric current in Fig. 3 a illustrated embodiment;
Fig. 5 is the power of SET variable-current generation in Fig. 3 a illustrated embodiment and the power comparison diagram that SET steady current produces;
Fig. 6 is the power of RESET variable-current generation in Fig. 3 a illustrated embodiment and the power comparison diagram that RESET steady current produces.
Embodiment
Referring to the accompanying drawing specific embodiment that develops simultaneously, the present invention is described in detail.
The invention provides a kind of method that realizes low power consumption of phase change memory, the method comprises two aspects: first, the material of the phase transition storage on one side circuit is carried out to electrical property detection, obtain: the very first time that the resistance of this phase transition storage is changed to low resistance by high resistance and the first maximum current and the first minimum current that maintain phase-change material Tc; And the resistance of this phase transition storage the second time being changed to high resistance by low resistance and the second maximum current and the second minimum current that maintain phase-change material temperature of fusion.
Then,, in the time carrying out set (SET) operation, to this phase transition storage input SET electric current, this SET electric current increases to gradually described the first maximum current from described the first minimum current within the described very first time, is then reduced to gradually 0; In the time carrying out replacement (RESET) operation, to this phase transition storage input RESET electric current, this RESET electric current turn-offs within described the second time from described the second maximum current reduces to described the second minimum current gradually.
Below a specific embodiment of the present invention is elaborated.
In the present embodiment, first by concrete experiment, the material of the phase transition storage to a side circuit carries out electrical property detection, has obtained following parameter:
1, the high resistance R of this phase transition storage
hwith low resistance R
l;
2, the resistance of this phase transition storage is by high resistance R
hto low resistance R
lthe very first time T changing
1; And maintain the first maximum current I of phase-change material Tc
11with the first minimum current I
12;
3, the resistance of this phase transition storage is by low resistance R
lto high resistance R
hthe second time T changing
2; And maintain the second maximum current I of phase-change material temperature of fusion
21with the second minimum current I
22.
And, in the following way, calculated the rate of rise k of SET electric current
1, RESET electric current descending slope k
2, and the resistance variations slope k of this phase transition storage in SET and RESET process
rand k
f.
1, by very first time T
1, the first maximum current I
11with the first minimum current I
12, substitution formula (1):
I＝I
aa+k
1t (1)
Calculate the rate of rise k of SET electric current
1;
Wherein: Iaa substitution the first minimum current I
11, I substitution the first maximum current I
12, t substitution very first time T
1.
2, by very first time T
2, the second maximum current I
21with the second minimum current I
22, substitution formula (2):
I＝I
b-k
2t (2)
Calculate the descending slope k of RESET electric current
2;
Wherein: I
bsubstitution the second maximum current I
21, I substitution the second minimum current I
22, t substitution the second time T
2.
3, detect the resistance variations slope k of this phase transition storage in SET and RESET process
rand k
f.
The slope k of resistance variations
rand k
fneed to determine by actual experimental data, the different fall time that first can write by change, by phase-change material during form different resistance values record, because resistance variations can not be likely straight line, a but curve, but also it doesn't matter, can connect into straight line by meeting the resistance of needed maximum in side circuit and minimum resistance, or get the wherein average line of numerical value, just can become the slope curve of needed resistance variations in the present invention, obtain the resistance variations slope k of this phase transition storage in SET and RESET process
rand k
f.Like this, the resistance variations curve of phase transition storage in SET and RESET process is respectively formula (3) and formula (4):
R＝R
H-k
rt (3)；
R＝R
L+k
ft (4)；
In the present embodiment, whether realize low-power consumption in order to obtain following formula (5) and formula (6) and calculating SET and RESET power with checking, obtained the resistance variations slope k in SET and RESET process
rand k
f.In practical application, whether realize low-power consumption for the phase transition storage of producing same circuits by batch without checking, only needed to detect the rate of rise k that obtains SET electric current
1descending slope k with RESET electric current
2.
In practical application, due to the electrical property difference of phase transition storage in different side circuits, therefore to carry out respectively to different side circuits the electrical property detection of phase transition storage.
In the present embodiment, to the process of this phase transition storage input SET electric current as shown in Figure 3 a, after SET starts working, carry out following steps:
Step 301, setting initial current I=I
aa, initial current I in this step
aabe set to the first minimum current I
12, resistance value R is set to high resistance R
h.
Suppose that maximum SET electric current is I
a(can be set to the first maximum current I
11), I
aaand I
aproportionate relationship should meet formula (5)
Step 302, input current SET current value to phase transition storage.
The current value of input is exactly initial current value I for the first time
aa.
Step 303, with the rate of rise k of SET electric current
1adjust the input current value to phase transition storage.
Use formula (1) to calculate the SET current value I after adjusting.
I＝I
aa+k
1t (1)
Step 304, judge whether current SET current value I is more than or equal to maximum SET electric current I
a, if so, perform step 305; Otherwise, return to execution step 302.
Step 305, SET electric current is reduced to 0 gradually.
The realization of this step is identical with prior art, repeats no more here.
As shown in Fig. 4 a, Fig. 4 b and Fig. 4 c.Suppose in the present embodiment, the resistance of phase transition storage in the process of SET from R
h(such as 10M Ω) is to R
l(such as 10K Ω) linear change, slope is Kr, and transformation period is from 0 to t32, and variation function is R=R
h-k
rt.
First the initial current value of SET electric current is set as to I
aa, so at initial time, corresponding phase transformation resistance is R
h, can obtain initial power P by power calculation
min=I
aa 2r
h.The power forming in this moment is to make temperature reach the power of Tc.
Then by SET electric current taking slope as k
1speed rise to gradually time t32, variation function is formula (1), is increased to t32 point when the time, when namely resistance value reaches minimum situation, current value is set as current value I
a, obtain P=I by rating formula
a 2r
l.The power forming in this moment point is so also to make temperature reach the power of Tc.That is to say I
aawith I
aproportionate relationship should meet the power that formula (5) can maintain on initial time and end time two points and can both reach power more than Tc.In process from t32 to t33, because phase transition storage is in crystallization process, so SET electric current is lowered slowly.
In order to obtain accurately corresponding power relation, according to P=I
2r, joins the concrete current values of supposition and the transformation period of SET electric current, by each function expression substitution.Time shaft variable is changed from 0 to 500ns, and taking 1ns as step-length, then set electric current I
avalue be 1mA, initial high electric current R
hfor 10M Ω, be reduced to low resistance R in 500ns time internal linear
lfor 10K.
By setting these variablees, can make a power function figure, as shown in Figure 5.The power function that wherein power function 1 of linear change produces in 500ns for original steady current, the power function 2 of curvilinear motion is the power function being produced by the SET electric current of above-mentioned linear change.
On the power diagram being produced by curvilinear motion SET electric current 2, can find out, the power producing in the time of initial time and end time is minimum, but this power is the lowest power that starts setting, namely can make temperature maintain the power of Tc point, except these two time points, the power of remainder is all very high, but to compare original power all very little, and it is very large to differ multiple.So can find out from this Fig. 5, in having ensured SET operation, the present embodiment has reached the object that reduces redundant power.
In the present embodiment, to the process of this phase transition storage input RESET electric current as shown in Figure 3 b, after RESET starts working, carry out following steps:
Step 306, setting initial current I=I
b, initial current I in this step
bbe set to the second maximum current I
21, resistance value R is set to low-resistance value R
l.
Suppose that minimum RESET electric current is I
bb, I
bband I
bproportionate relationship should meet formula (6)
Step 307, input current current value to phase transition storage.
The current value of input is exactly initial current value I for the first time
b.
Step 308, with the descending slope k of RESET electric current
2adjust the input current value to phase transition storage.
Use formula (2) to calculate the RESET current value I after adjusting.
I＝I
b-k
2t (2)
Step 309, judge whether current RESET current value I is less than or equal to minimum RESET electric current I
bb(can be set to the second minimum current I
22), if so, perform step 310; Otherwise, return to execution step 307.
Step 310, RESET electric current is turn-offed rapidly.
The realization of this step is identical with prior art, repeats no more here.
As shown in Fig. 4 a, Fig. 4 b and Fig. 4 c.Suppose in the present embodiment, the resistance of phase transition storage in the process of RESET from R
l(such as 10K Ω) is to R
h(such as 10M Ω) linear change, slope is k
f, transformation period is from 0 to t31, and variation function is R=R
l+ k
ft.
First the initial current value of RESET is set as to I
b, so at this moment to wait, corresponding phase transformation resistance is R
l, can obtain P by power calculation
min=I
b 2r
l.The power forming in this moment is to make temperature reach the power of temperature of fusion.
Then by RESET electric current taking slope as k
2speed drop to gradually time t31, variation function is I=I
b-k
2t, in the time that the time reaches t31, namely resistance value reaches the highest situation, and current value is set as I
bb, obtain P by rating formula
min=I
bb 2r
h.The power forming in this moment is so also to make temperature reach the power of temperature of fusion.That is to say I
bbwith I
bproportionate relationship should meet the power that formula (6) can maintain on initial time and end time two points and can both reach power more than temperature of fusion.
In RESET EO, because phase change resistor need to lower temperature rapidly in amorphous state, so need to, at t31 place cut-off current rapidly, reach the effect of cooling.
In order to obtain power relation accurately, the transformation period of concrete current values and RESET can be joined, each function expression is updated to horse-power formula P=I
2r.The transformation period of RESET is set as to 50ns, and by time shaft variable from 0 to 50ns change, taking 1ns as step-length.Then set initial current I
bvalue be 10mA, initial low resistance R
lfor 10K Ω, rise to R in 50ns time internal linear
hfor 10M Ω.
By setting these variablees, can make a power function figure as shown in Figure 6, wherein the power function 1 of linear change is original steady current I
bthe power function producing, the power function 2 of curvilinear motion is the power function being produced by the RESET electric current of linear change.
The power function curve 2 being produced by the RESET electric current of linear change can be found out, the power producing in the time of initial time and end time is minimum, but this power is the lowest power that starts setting, namely can make temperature maintain the power of fusing point, except these two time points, the power of remainder is all very high, but to compare original power all very little, and it is very large to differ multiple.So the present invention is ensureing, under the prerequisite of RESET operation, to have reduced redundant power.
From the above embodiments, the power consumption of phase transition storage can be obviously lowered in application the present invention.
Claims (7)
1. a method that realizes low power consumption of phase change memory, is characterized in that, comprising:
A, the material of a phase transition storage is carried out to electrical property detection, obtains:
The very first time that the resistance of this phase transition storage is changed to low resistance by high resistance and the first maximum current and the first minimum current that maintain phase-change material Tc; And
The second time that the resistance of this phase transition storage is changed to high resistance by low resistance and the second maximum current and the second minimum current that maintain phase-change material temperature of fusion;
When B, execution set (SET) operation, to this phase transition storage input SET electric current, this SET electric current increases to gradually described the first maximum current from described the first minimum current within the described very first time, is then reduced to gradually 0;
Carry out while resetting (RESET) operation, to this phase transition storage input RESET electric current, this RESET electric current turn-offs within described the second time from described the second maximum current reduces to described the second minimum current gradually; Wherein,
Wherein, I
afor described the first maximum current, I
aafor described the first minimum current, I
bfor described the second maximum current, I
bbfor described the second minimum current, R
hand R
lbe respectively high resistance and the low resistance of phase transition storage.
2. the method for claim 1, is characterized in that: described to the material of a phase transition storage carry out electrical property detect be: by experiment the material of a phase transition storage is detected.
3. the method for claim 1, is characterized in that: in steps A further by the very first time, the first maximum current and the first minimum current, substitution formula (1):
I＝I
aa+k
1t (1)
Wherein: by described the first maximum current substitution I, by described the first minimum current substitution I
aa, by described very first time substitution t, calculate the rate of rise k of SET electric current
1;
The electric current of SET described in step B increases to gradually described the first maximum current from described the first minimum current within the described very first time:
The rate of rise k of the SET electric current based on calculating
1, by initial current substitution I
aa, by current time substitution t, obtain the current value of current time.
4. method as claimed in claim 3, is characterized in that: the high resistance R that further detects phase transition storage in steps A
hwith low-resistance value R
l.
5. method as claimed in claim 4, is characterized in that: in steps A further by the second time, the second maximum current and the second minimum current, substitution formula (2):
I＝I
b-k
2t (2)
Wherein: by described the second minimum current substitution I, by described the second maximum current substitution I
b, by described the second time substitution t, calculate the descending slope k of RESET electric current
2;
The electric current of RESET described in step B turn-offs within described the second time from described the second maximum current reduces to described the second minimum current gradually:
The descending slope k of the RESET electric current based on calculating
2with described the second maximum current I
b, by current time substitution t, obtain the current value of current time; And in the time that the second time arrived, turn-off RESET electric current.
6. method as claimed in claim 5, it is characterized in that: in described steps A, the different fall time further writing by change, by this phase-change material during form different resistance values record, connect into straight line by meeting the resistance of needed maximum in side circuit and minimum resistance, or get the average line of described different resistance value, obtain the resistance variations slope k of phase transition storage in SET and RESET process
rand k
f;
The resistance variations curve of phase transition storage in SET and RESET process is respectively formula (3) and formula (4):
R＝R
H-k
rt (3)；
R＝R
L+k
ft (4)。
7. method as claimed in claim 6, is characterized in that: in described step B, and the resistance variations slope k by phase transition storage in SET and RESET process
rand k
f, high resistance R
h, low-resistance value R
lwith current time t substitution formula (3) and (4) respectively, obtain the resistance value R in each moment in SET and RESET process, draw power diagram in order to the power that calculates each moment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210036641.3A CN102543170B (en) | 2012-02-17 | 2012-02-17 | Method for realizing low power consumption of phase change memory |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210036641.3A CN102543170B (en) | 2012-02-17 | 2012-02-17 | Method for realizing low power consumption of phase change memory |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102543170A CN102543170A (en) | 2012-07-04 |
| CN102543170B true CN102543170B (en) | 2014-10-29 |
Family
ID=46349872
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210036641.3A Active CN102543170B (en) | 2012-02-17 | 2012-02-17 | Method for realizing low power consumption of phase change memory |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102543170B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104882161B (en) * | 2014-02-28 | 2017-07-11 | 复旦大学 | A kind of resistor-type random-access memory and its write operation method |
| CN108597558B (en) * | 2018-04-23 | 2020-10-20 | 中国科学院上海微***与信息技术研究所 | System and method for optimizing write operation current of phase change memory |
| US20210288250A1 (en) * | 2020-03-13 | 2021-09-16 | International Business Machines Corporation | Phase Change Memory Having Gradual Reset |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1588664A (en) * | 2004-08-06 | 2005-03-02 | 中国科学院上海微***与信息技术研究所 | Characterization emthod for convertable phase change material electric property |
| CN1610951A (en) * | 2001-12-28 | 2005-04-27 | 英特尔公司 | Method and apparatus to program a phase change memory |
| WO2008035392A1 (en) * | 2006-09-19 | 2008-03-27 | Renesas Technology Corp. | Semiconductor integrated circuit device |
| TW200828332A (en) * | 2006-12-25 | 2008-07-01 | Ind Tech Res Inst | Programming method of phase change memory |
| WO2011074021A1 (en) * | 2009-12-18 | 2011-06-23 | Mattia Boniardi | Modified reset state for enhanced read margin of phase change memory |
-
2012
- 2012-02-17 CN CN201210036641.3A patent/CN102543170B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1610951A (en) * | 2001-12-28 | 2005-04-27 | 英特尔公司 | Method and apparatus to program a phase change memory |
| CN1588664A (en) * | 2004-08-06 | 2005-03-02 | 中国科学院上海微***与信息技术研究所 | Characterization emthod for convertable phase change material electric property |
| WO2008035392A1 (en) * | 2006-09-19 | 2008-03-27 | Renesas Technology Corp. | Semiconductor integrated circuit device |
| TW200828332A (en) * | 2006-12-25 | 2008-07-01 | Ind Tech Res Inst | Programming method of phase change memory |
| WO2011074021A1 (en) * | 2009-12-18 | 2011-06-23 | Mattia Boniardi | Modified reset state for enhanced read margin of phase change memory |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102543170A (en) | 2012-07-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102543170B (en) | Method for realizing low power consumption of phase change memory | |
| CN100458631C (en) | Method and apparatus for controlling temperature of heating element | |
| CN105846409B (en) | Hot plug operations for programmable logic device | |
| CN103281082B (en) | A kind of analog to digital conversion circuit based on memory resistor | |
| CN105225692B (en) | Operate the method and integrated circuit of memory cell | |
| CN100473995C (en) | Testing regulating device and method of quartz crystal osciuator | |
| CN105392987A (en) | Impact generating actuator and touch panel | |
| CN102129886A (en) | Methods for initializing, setting and resetting resistive random access memory | |
| CN101763452B (en) | Simulation method of phase-change memory | |
| US9053785B2 (en) | Phase-change memory cell | |
| CN106611615B (en) | The operating method and resistive memory of resistance-type memory cell | |
| CN105825891A (en) | Memory device and operation method thereof | |
| CN103714852A (en) | Method for precisely controlling continuous variation of non-crystallizing rate of micro-nano phase changing material | |
| CN104767487A (en) | Voltage generator, oscillation device and operation method | |
| CN105865648A (en) | Low-power-consumption temperature detection method and device | |
| CN105869672A (en) | RRAM-based nonvolatile FPGA programmed point circuit and operating method thereof | |
| CN103869856B (en) | A kind of multivoltage sequential control circuit | |
| CN108090308B (en) | HP memristor and capacitor-based basic unit chaotic circuit | |
| CN103093816B (en) | Phase-change memorizer driver circuit and set and repositioning method | |
| CN202926683U (en) | Power supply temperature sampling and fan controlling circuit and power supply device | |
| CN202168062U (en) | On-chip terminal resistor and calibration loop | |
| CN104678854A (en) | Remote controller, temperature sampling control system and temperature sampling control method | |
| CN102566622B (en) | Temperature adjusting device for refrigerator | |
| CN104241527A (en) | Phase change memory V-Sb-Te phase change material system and preparing method thereof | |
| CN103943144A (en) | Reference resistance-optimized phase change memory reading circuit and reference resistance optical selection method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |