CN102530831A - Mems器件的制作方法 - Google Patents
Mems器件的制作方法 Download PDFInfo
- Publication number
- CN102530831A CN102530831A CN2010106078266A CN201010607826A CN102530831A CN 102530831 A CN102530831 A CN 102530831A CN 2010106078266 A CN2010106078266 A CN 2010106078266A CN 201010607826 A CN201010607826 A CN 201010607826A CN 102530831 A CN102530831 A CN 102530831A
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- 238000000034 method Methods 0.000 title claims abstract description 20
- 238000004519 manufacturing process Methods 0.000 title abstract description 18
- 239000004065 semiconductor Substances 0.000 claims abstract description 49
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 238000005530 etching Methods 0.000 claims abstract description 24
- 239000002184 metal Substances 0.000 claims abstract description 18
- 229910003481 amorphous carbon Inorganic materials 0.000 claims abstract description 13
- 239000000126 substance Substances 0.000 claims abstract description 12
- 238000005516 engineering process Methods 0.000 claims abstract description 11
- 238000002360 preparation method Methods 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 17
- 238000000926 separation method Methods 0.000 claims description 13
- 238000005229 chemical vapour deposition Methods 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 230000015572 biosynthetic process Effects 0.000 claims description 9
- 238000003701 mechanical milling Methods 0.000 claims description 8
- 238000001020 plasma etching Methods 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 238000009413 insulation Methods 0.000 claims description 2
- 238000000227 grinding Methods 0.000 abstract description 6
- 230000007246 mechanism Effects 0.000 description 5
- 238000005498 polishing Methods 0.000 description 5
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- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000033001 locomotion Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000000717 retained effect Effects 0.000 description 2
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- 238000007630 basic procedure Methods 0.000 description 1
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- 239000007769 metal material Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
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- 229920000620 organic polymer Polymers 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
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Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00277—Processes for packaging MEMS devices for maintaining a controlled atmosphere inside of the cavity containing the MEMS
- B81C1/00293—Processes for packaging MEMS devices for maintaining a controlled atmosphere inside of the cavity containing the MEMS maintaining a controlled atmosphere with processes not provided for in B81C1/00285
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
- B81C1/0015—Cantilevers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/0802—Details
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2203/00—Basic microelectromechanical structures
- B81B2203/01—Suspended structures, i.e. structures allowing a movement
- B81B2203/0118—Cantilevers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2207/00—Microstructural systems or auxiliary parts thereof
- B81B2207/07—Interconnects
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0102—Surface micromachining
- B81C2201/0105—Sacrificial layer
- B81C2201/0109—Sacrificial layers not provided for in B81C2201/0107 - B81C2201/0108
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0118—Processes for the planarization of structures
- B81C2201/0125—Blanket removal, e.g. polishing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/01—Packaging MEMS
- B81C2203/0145—Hermetically sealing an opening in the lid
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
- G01P2015/0822—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass
- G01P2015/0825—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass for one single degree of freedom of movement of the mass
- G01P2015/0828—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass for one single degree of freedom of movement of the mass the mass being of the paddle type being suspended at one of its longitudinal ends
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/0072—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks of microelectro-mechanical resonators or networks
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Micromachines (AREA)
- Pressure Sensors (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
Claims (12)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201010607826.6A CN102530831B (zh) | 2010-12-27 | 2010-12-27 | Mems器件的制作方法 |
EP11852932.0A EP2631939B1 (en) | 2010-12-27 | 2011-05-19 | Method for manufacturing mems device |
US13/882,337 US8877537B2 (en) | 2010-12-27 | 2011-05-19 | Method for manufacturing MEMS device |
PCT/CN2011/074289 WO2012088820A1 (zh) | 2010-12-27 | 2011-05-19 | Mems器件的制作方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201010607826.6A CN102530831B (zh) | 2010-12-27 | 2010-12-27 | Mems器件的制作方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102530831A true CN102530831A (zh) | 2012-07-04 |
CN102530831B CN102530831B (zh) | 2014-05-21 |
Family
ID=46339066
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201010607826.6A Active CN102530831B (zh) | 2010-12-27 | 2010-12-27 | Mems器件的制作方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8877537B2 (zh) |
EP (1) | EP2631939B1 (zh) |
CN (1) | CN102530831B (zh) |
WO (1) | WO2012088820A1 (zh) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104058367A (zh) * | 2013-03-22 | 2014-09-24 | 上海丽恒光微电子科技有限公司 | Mems器件的制造方法 |
CN104671186A (zh) * | 2013-11-27 | 2015-06-03 | 英飞凌科技股份有限公司 | Mems器件 |
CN104955765A (zh) * | 2013-02-01 | 2015-09-30 | 韩国科学技术院 | Mems器件制造方法 |
CN105439081A (zh) * | 2014-09-30 | 2016-03-30 | 中芯国际集成电路制造(上海)有限公司 | Mems器件的形成方法 |
CN105819394A (zh) * | 2015-01-07 | 2016-08-03 | 中芯国际集成电路制造(上海)有限公司 | Mems器件的形成方法 |
CN105987836A (zh) * | 2015-02-17 | 2016-10-05 | 中芯国际集成电路制造(上海)有限公司 | Tem样品及其制备方法 |
CN104053105B (zh) * | 2013-03-14 | 2019-11-22 | 英飞凌科技股份有限公司 | 半导体器件的形成方法 |
CN111362228A (zh) * | 2018-12-25 | 2020-07-03 | 中芯集成电路(宁波)有限公司 | 封装方法及封装结构 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9759562B2 (en) * | 2012-09-04 | 2017-09-12 | University Of Cyprus | Hybrid MEMS microfluidic gyroscope |
KR101572045B1 (ko) * | 2014-04-14 | 2015-11-27 | 한국과학기술원 | 소자 패키징 방법 및 이를 이용한 소자 패키지 |
US9446948B1 (en) | 2015-02-26 | 2016-09-20 | Analog Devices, Inc. | Apparatus and method of forming a MEMS device with etch channels |
FR3051458B1 (fr) * | 2016-05-20 | 2020-09-04 | Univ Limoges | Commutateur variable microelectromecanique radiofrequence |
US10364144B2 (en) * | 2017-11-17 | 2019-07-30 | Texas Instruments Incorporated | Hermetically sealed package for mm-wave molecular spectroscopy cell |
CN110076940B (zh) * | 2019-03-26 | 2021-10-08 | 中国科学院微电子研究所 | 一种基于金属微观结构的精密模具 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1123917A (zh) * | 1994-05-04 | 1996-06-05 | 大宇电子株式会社 | 制造薄膜可驱动反射镜阵列的方法 |
CN1366332A (zh) * | 2001-01-17 | 2002-08-28 | 世界先进积体电路股份有限公司 | 制造金属氧化物半导体元件双层栅极的方法 |
US20040219340A1 (en) * | 2003-04-29 | 2004-11-04 | Motorola Inc. | Method of adding mass to MEMS structures |
US20060270152A1 (en) * | 2005-05-25 | 2006-11-30 | Hynix Semiconductor Inc. | Method of manufacturing semiconductor device having tungsten gates electrode |
CN101089677A (zh) * | 2006-06-12 | 2007-12-19 | 中芯国际集成电路制造(上海)有限公司 | 硅基液晶显示器件及其制造和检测方法 |
CN101183658A (zh) * | 2006-11-13 | 2008-05-21 | 中芯国际集成电路制造(上海)有限公司 | 沟槽的制造方法及其应用于制造图像传感器方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7005314B2 (en) | 2001-06-27 | 2006-02-28 | Intel Corporation | Sacrificial layer technique to make gaps in MEMS applications |
US7943412B2 (en) * | 2001-12-10 | 2011-05-17 | International Business Machines Corporation | Low temperature Bi-CMOS compatible process for MEMS RF resonators and filters |
JP3866755B2 (ja) * | 2003-02-17 | 2007-01-10 | 日本電信電話株式会社 | 表面形状認識用センサ及びその製造方法 |
US7239712B1 (en) | 2004-06-23 | 2007-07-03 | National Semiconductor Corporation | Inductor-based MEMS microphone |
EP1841688A1 (en) * | 2005-01-24 | 2007-10-10 | University College Cork-National University of Ireland, Cork | Packaging of micro devices |
US7439093B2 (en) | 2005-09-16 | 2008-10-21 | Dalsa Semiconductor Inc. | Method of making a MEMS device containing a cavity with isotropic etch followed by anisotropic etch |
US7732299B2 (en) * | 2007-02-12 | 2010-06-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Process for wafer bonding |
US20080290430A1 (en) | 2007-05-25 | 2008-11-27 | Freescale Semiconductor, Inc. | Stress-Isolated MEMS Device and Method Therefor |
CN101559915A (zh) | 2008-09-17 | 2009-10-21 | 电子科技大学 | 一种制备mems器件的牺牲层工艺方法 |
JP2010162629A (ja) * | 2009-01-14 | 2010-07-29 | Seiko Epson Corp | Memsデバイスの製造方法 |
US8957485B2 (en) | 2009-01-21 | 2015-02-17 | Cavendish Kinetics, Ltd. | Fabrication of MEMS based cantilever switches by employing a split layer cantilever deposition scheme |
FR2946636B1 (fr) * | 2009-06-15 | 2012-03-23 | Commissariat Energie Atomique | Procede de liberation ameliore de la structure suspendue d'un composant nems et/ou mems |
-
2010
- 2010-12-27 CN CN201010607826.6A patent/CN102530831B/zh active Active
-
2011
- 2011-05-19 US US13/882,337 patent/US8877537B2/en active Active
- 2011-05-19 EP EP11852932.0A patent/EP2631939B1/en not_active Not-in-force
- 2011-05-19 WO PCT/CN2011/074289 patent/WO2012088820A1/zh active Application Filing
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1123917A (zh) * | 1994-05-04 | 1996-06-05 | 大宇电子株式会社 | 制造薄膜可驱动反射镜阵列的方法 |
CN1366332A (zh) * | 2001-01-17 | 2002-08-28 | 世界先进积体电路股份有限公司 | 制造金属氧化物半导体元件双层栅极的方法 |
US20040219340A1 (en) * | 2003-04-29 | 2004-11-04 | Motorola Inc. | Method of adding mass to MEMS structures |
US20060270152A1 (en) * | 2005-05-25 | 2006-11-30 | Hynix Semiconductor Inc. | Method of manufacturing semiconductor device having tungsten gates electrode |
CN101089677A (zh) * | 2006-06-12 | 2007-12-19 | 中芯国际集成电路制造(上海)有限公司 | 硅基液晶显示器件及其制造和检测方法 |
CN101183658A (zh) * | 2006-11-13 | 2008-05-21 | 中芯国际集成电路制造(上海)有限公司 | 沟槽的制造方法及其应用于制造图像传感器方法 |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104955765A (zh) * | 2013-02-01 | 2015-09-30 | 韩国科学技术院 | Mems器件制造方法 |
CN104955765B (zh) * | 2013-02-01 | 2018-02-13 | 韩国科学技术院 | Mems器件制造方法 |
CN104053105B (zh) * | 2013-03-14 | 2019-11-22 | 英飞凌科技股份有限公司 | 半导体器件的形成方法 |
CN104058367A (zh) * | 2013-03-22 | 2014-09-24 | 上海丽恒光微电子科技有限公司 | Mems器件的制造方法 |
CN104671186A (zh) * | 2013-11-27 | 2015-06-03 | 英飞凌科技股份有限公司 | Mems器件 |
CN105439081A (zh) * | 2014-09-30 | 2016-03-30 | 中芯国际集成电路制造(上海)有限公司 | Mems器件的形成方法 |
CN105439081B (zh) * | 2014-09-30 | 2017-06-13 | 中芯国际集成电路制造(上海)有限公司 | Mems器件的形成方法 |
CN105819394A (zh) * | 2015-01-07 | 2016-08-03 | 中芯国际集成电路制造(上海)有限公司 | Mems器件的形成方法 |
CN105987836A (zh) * | 2015-02-17 | 2016-10-05 | 中芯国际集成电路制造(上海)有限公司 | Tem样品及其制备方法 |
CN105987836B (zh) * | 2015-02-17 | 2018-10-23 | 中芯国际集成电路制造(上海)有限公司 | Tem样品及其制备方法 |
CN111362228A (zh) * | 2018-12-25 | 2020-07-03 | 中芯集成电路(宁波)有限公司 | 封装方法及封装结构 |
CN111362228B (zh) * | 2018-12-25 | 2023-09-08 | 中芯集成电路(宁波)有限公司 | 封装方法及封装结构 |
Also Published As
Publication number | Publication date |
---|---|
US20130309797A1 (en) | 2013-11-21 |
EP2631939A1 (en) | 2013-08-28 |
EP2631939A4 (en) | 2014-10-01 |
CN102530831B (zh) | 2014-05-21 |
EP2631939B1 (en) | 2016-04-06 |
WO2012088820A1 (zh) | 2012-07-05 |
US8877537B2 (en) | 2014-11-04 |
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