CN102509705A - Repair method for damaged superlow dielectric constant thin film subjected to chemical mechanical polishing - Google Patents
Repair method for damaged superlow dielectric constant thin film subjected to chemical mechanical polishing Download PDFInfo
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- CN102509705A CN102509705A CN2011103556307A CN201110355630A CN102509705A CN 102509705 A CN102509705 A CN 102509705A CN 2011103556307 A CN2011103556307 A CN 2011103556307A CN 201110355630 A CN201110355630 A CN 201110355630A CN 102509705 A CN102509705 A CN 102509705A
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Abstract
The invention provides a repair method for a damaged superlow dielectric constant thin film subjected to CMP (Chemical Mechanical Polishing), which comprises the following steps: a first dielectric resistor barrier and a first dielectric layer are sequentially deposited on a basal layer form top to bottom, and a first groove is formed in the first dielectric resistor barrier and the first dielectric layer through the etching technology; after diffusion restraining barriers are arranged on the side wall of the first groove and the surface of the first dielectric layer, and then metal is filled so as to form a first groove electrocoppering; the above structure is subjected to the CMP technology which is suspended on the surface of the first dielectric layer; the moisture of the above structure is removed through preheating treatment; and the surface of the structure is subjected to the original position plasma technology through the reducing gas combination, and then a second dielectric resistor barrier is started depositing. According to the repair method provided by the invention, the damage of the superlow dielectric constant thin film subjected to the CMP is reduced.
Description
Technical field
The present invention relates to semiconductor integrated circuit and make the field, relate in particular to the restorative procedure of the ultralow dielectric film that damages after a kind of chemico-mechanical polishing, with the loss that after the minimizing chemico-mechanical polishing ultralow dielectric film is produced.
Background technology
Along with the semiconductor integrated circuit technique continuous advancement in technology; When semiconductor device was contracted to the scope of deep-submicron, the high performance integrated circuit chip needed alap wire capacitances (C), resistance (R), signal delay (RC time delay) and signal cross-talk.For this reason, the isolated material that needs to fill between interlayer and the line of low resistance material such as copper metal line and line low-k (low k dielectric) reduces the RC time of delay that causes because of dead resistance and parasitic capacitance, with the boost device performance.Yet; When the plain conductor material was copper, the etching of copper is difficulty comparatively, therefore; Prior art is through being converted to damascene structure; Form earlier the low resistance material dielectric layer, in dielectric layer, form the groove that is used for inserting copper then and realize that copper is interconnected, to impel the application in the integrated circuit production technology of low resistance material such as copper or advanced low-k materials.
The cmp method that has more common a kind of ultra-low dielectric materials now is an example, can be referring to Figure 1A to Fig. 1 D.
At first,, on the basalis that provides 100, form first dielectric barrier layer 102 and first dielectric layer 104 from the bottom to top successively, and in first dielectric layer 104 and first dielectric barrier layer 102, make first groove 110 referring to Figure 1A.
Secondly; Referring to Figure 1B, (physical vapor deposition is after PVD) technology forms diffusion impervious layer 112 on the surface of the sidewall of first groove 110 and first dielectric layer 104, to adopt physical vapour deposition (PVD); Carry out metal filledly, form the first groove electro-coppering 114.
Then; Referring to Fig. 1 C, said structure is carried out chemico-mechanical polishing (CMP) technology, and stop on the surface of first dielectric layer 104; Make the flattening surface of the first groove electro-coppering 114, and make the surperficial concordant of the first groove electro-coppering 114 and first dielectric layer 104.
Then, referring to Fig. 1 D, on the surface of first dielectric layer 104 and the first groove electro-coppering 114, continue deposition second dielectric barrier layer 120, the preparation of preparing next interconnection layer.
Technological more than 45 nanometers at present, the ultralow dielectric dielectric material that generally adopts is porous silica (the carbon doped oxide) film (K＜2.7) of carbon dope.Through the use of ultra-low dielectric constant material, can under the condition that does not reduce wiring density, effectively reduce ghost effect, reduced the RC interconnect delay time, improve the speed of integrated circuit.But, being accompanied by the requirement that the dielectric material dielectric constant constantly reduces, the porosity and the phosphorus content of dielectric material constantly increase; And that structure becomes is more and more loose; In many technical processs, like CMP technology (shown in Fig. 1 C) afterwards, owing to exist porous in the silica of carbon dope; Above-mentioned technology can be introduced such as pollutions such as steam, lapping liquids and penetrate in the porous; Form one deck steam layer (moisture) 116, promptly under the top layer of first dielectric layer 104, form one deck steam layer 116, thereby change dielectric constant; And layer on surface of metal also can be formed oxide layer 118 on copper metallic region surface (promptly on the surface of the first groove electro-coppering 114) by oxidations such as these lapping liquids; Meanwhile, also can residual contaminants on the surface of dielectric material and copper metallic region.For this reason; How to remove these effectively and pollute, the dielectric constant of avoiding the advanced low-k materials damage to cause improves, and how to improve the layer on surface of metal state; Improve adhesion with lower floor; Eliminate these and pollute having a strong impact on that speed ability, reliability and output to integrated circuit produces, improve electromigration and stress migration performance, become a current particularly important problem.
In order to address the above problem; When in the integrated circuit production technology, using these low resistance material or advanced low-k materials; Need seek redress and eliminate after the technical processs such as coming from CMP the damage that advanced low-k materials and metal surface are caused; But in the implementation process of reality, still there is sizable barrier; Demand introducing the new method that effectively to improve above-mentioned defective urgently, to solve the topmost problem that low resistance material such as copper and/or advanced low-k materials etc. face when the integrated circuit production technology is used.
Summary of the invention
Technical problem to be solved by this invention provides the restorative procedure of the ultralow dielectric film that damages after a kind of chemico-mechanical polishing, to reduce after the chemico-mechanical polishing damage to the ultralow dielectric film.
For addressing the above problem, the restorative procedure of the ultralow dielectric film that damages after a kind of chemico-mechanical polishing that the present invention proposes comprises the steps:
On basalis, deposit first dielectric barrier layer and first dielectric layer from the bottom to top successively, adopt etch process in first dielectric barrier layer and first dielectric layer, to form first groove;
After forming diffusion impervious layer on the surface of the sidewall of first groove and first dielectric layer, carry out the metal filled formation first groove electro-coppering;
Said structure is carried out CMP process, stop on the surface of first dielectric layer;
Carry out The pre-heat treatment, remove the steam in the said structure;
After adopting the reducibility gas combination to carry out in-situ plasma technology to the surface of said structure, carry out the deposition of second dielectric barrier layer.
Visible by technique scheme; Compare with the CMP process of the ultra-low dielectric materials of traditional common; The restorative procedure of the ultralow dielectric film that damages after the chemico-mechanical polishing disclosed by the invention carries out CMP process after in first dielectric barrier layer and first dielectric layer, accomplishing the first groove electro-coppering, in reaction chamber, said structure is carried out the The pre-heat treatment of certain hour then; Remove the steam in steam, especially first dielectric layer in the said structure.Subsequently; Adopt the reproducibility composition gas such as hydrogen and hydrocarbon of certain proportioning; Directly producing plasma in the reaction chamber to carrying out the in-situ plasma PROCESS FOR TREATMENT, after processing finishes, carrying out the deposition of second dielectric barrier layer at once through the damascene structure surface after the CMP technology.Because above-mentioned damascene structure has carried out The pre-heat treatment earlier; Especially the steam in the porous is removed one by one; Not only increased the bonding force between first dielectric layer and the follow-up barrier layer; Avoid the especially component failure that caused by long-term erosion of steam of first barrier layer of damascene structure simultaneously, thereby improved device performance; The carbon depletion that technology such as CMP technology were brought before the carbon that the in-situ plasma technology of carrying out then produces can compensate; Make the rising of the thin-film dielectric constant that CMP technology causes obtain certain reduction; And can clean dielectric material surface and copper metallic region surface synchronously; Strengthen the bonding force between first dielectric layer and copper metallic region and the follow-up barrier layer, thereby played comprehensive repair, helped the improvement of device speed performance; Improve the deelectric transferred and stress migration performance of copper metal line, improve dielectric dielectric breakdown life-span.
Description of drawings
Figure 1A to Fig. 1 D is the cmp method of a kind of ultra-low dielectric materials in the prior art.
Fig. 2 is the restorative procedure flow process of the ultralow dielectric film that damages after a kind of chemico-mechanical polishing of the present invention.
Figure 1A to Fig. 1 C and Fig. 1 E to Fig. 1 G are the restorative procedure of the ultralow dielectric film that damages after a kind of chemico-mechanical polishing of the present invention.
Embodiment
For make above-mentioned purpose of the present invention, feature and advantage can be more obviously understandable, does detailed explanation below in conjunction with the accompanying drawing specific embodiments of the invention.
A lot of details have been set forth in the following description so that make much of the present invention.But the present invention can implement much to be different from alternate manner described here, and those skilled in the art can do similar popularization under the situation of intension of the present invention, so the present invention does not receive the restriction of following disclosed practical implementation.
Secondly, the present invention utilizes sketch map to be described in detail, when the embodiment of the invention is detailed; For ease of explanation; The profile of expression device architecture can be disobeyed general ratio and done local the amplification, and said sketch map is instance, and it should not limit the scope of the present invention's protection at this.The three dimensions size that in actual fabrication, should comprise in addition, length, width and the degree of depth.
Referring to Fig. 2, the restorative procedure flow process of the ultralow dielectric film that damages after a kind of chemico-mechanical polishing provided by the present invention is:
S100: on basalis, deposit first dielectric barrier layer and first dielectric layer from the bottom to top successively, adopt etch process in first dielectric barrier layer and first dielectric layer, to form first groove;
S101: after forming diffusion impervious layer on the surface of the sidewall of first groove and first dielectric layer, carry out the metal filled formation first groove electro-coppering;
S102: said structure is carried out CMP process, stop on the surface of first dielectric layer;
S103: carry out The pre-heat treatment, remove the steam in the said structure;
S104: after adopting the reducibility gas combination to carry out in-situ plasma technology to the surface of said structure, carry out the deposition of second dielectric barrier layer.
Be example with method flow shown in Figure 2 below,, the manufacture craft of the restorative procedure of the ultralow dielectric film that damages after a kind of chemico-mechanical polishing be described in detail in conjunction with accompanying drawing 1A to 1C and Fig. 1 E to 1G.
S100: on basalis, deposit first dielectric barrier layer and first dielectric layer from the bottom to top successively, adopt etch process in first dielectric barrier layer and first dielectric layer, to form first groove.
Referring to Figure 1A; At first; One basalis 100 is provided, on said basalis 100, deposits first dielectric barrier layer 102 and first dielectric layer 104 from the bottom to top successively, then; Adopt etch process in first dielectric barrier layer 102 and first dielectric layer 104, to form first groove 110, said first groove 110 comprises first through hole 106 and irrigation canals and ditches 108.
The forming process of said first groove 110 is following: at first, adopt etch process to form first through hole 106 and pass first dielectric layer 104 and first dielectric barrier layer 102, etching stops on the basalis; Next, utilize similar etch process to form irrigation canals and ditches 108 and pass part of first dielectric layer 104, the said irrigation canals and ditches 108 that these steps form are positioned at and are centered around the top of first through hole 106.
S101: after forming diffusion impervious layer on the surface of the sidewall of first groove and first dielectric layer, carry out the metal filled formation first groove electro-coppering.
Referring to Figure 1B; Adopt on the surface of the sidewall of first groove and first dielectric layer 104 but be not limited to physical vapour deposition (PVD) (physical vapor deposition; PVD) after technology formed diffusion impervious layer 112, it was metal filled to adopt electroplating technology to carry out, and forms the first groove electro-coppering 114.
S102: said structure is carried out CMP process, stop on the surface of first dielectric layer.
Referring to Fig. 1 C; Said structure is carried out CMP technology; And stop on the surface of said first dielectric layer 104; And the upper section (that is excessively filling) on first groove, 110 planes is removed, makes the flattening surface of the firstth groove electro-coppering 114, and make the surperficial concordant of first dielectric layer 104 and the first groove electro-coppering 114.
In conjunction with consulting Figure 1A and Fig. 1 C; Make the metal of inlaying in first through hole 106 identical through this step with the material of the irrigation canals and ditches that are used for plain conductor 108; Minimizing is produced the problem of electromigration invalidation by first through hole 106; Thereby lead that the height of having realized copper substitution of Al material conducts electricity and the metal connecting line technology between the advanced low-k materials have reduced the RC time delay, improve the speed ability of integrated circuit.
But; After above-mentioned steps especially CMP technology; Under said first dielectric layer 104 top layers, pin a large amount of steam, formed steam layer 116, and on the surface of said first dielectric layer 104 and the said first groove electro-coppering 114, adhered to residue; Especially on copper metallic region surface, also formed oxide layer 118, said oxide layer 118 can be cupric oxide.
S103: carry out The pre-heat treatment, remove the steam in the said structure.
Referring to Fig. 1 E; Carrying out follow-up second dielectric barrier layer, 120 depositions (referring to Fig. 1 D) before; Said structure (referring to Fig. 1 C) is placed in the reaction chamber, through general preheating device said structure is carried out after the preheating of predetermined temperature of certain hour, can remove in the said structure steam (that is moisture) in the steam layer 116 especially; And, said The pre-heat treatment can damaged said structure and said structure in semiconductor crystal.
The temperature that said The pre-heat treatment is carried out is at 200 degrees centigrade～400 degrees centigrade.If preheat temperature is lower than 200 degrees centigrade, the speed of then removing steam is slower, is not easy to remove fully steam, and can not fully promote the bonding force on said structure surface; If preheat temperature is higher than 400 degrees centigrade, can cause producing than air pocket along the said structure surface, if the temperature difference is big more, be easy to generate big bubble more, cause the medium maldistribution more easily on the said structure surface, the entire device function is damaged.
The time of said The pre-heat treatment is greater than 60 seconds.Certainly, the time of The pre-heat treatment can be regulated and control according to structure, the dielectric material of practical devices and the difference that forms the other materials of this device architecture, to remove the steam in the steam layer 116, can realize the object of the invention equally.
Preferably, the temperature of The pre-heat treatment is 350 degrees centigrade, not only can remove steam, prevents that bubble from producing, and can increase the bonding force on said structure surface.
S104: after adopting the reducibility gas combination to carry out in-situ plasma technology to the surface of said structure, carry out the deposition of second dielectric barrier layer.
Referring to Fig. 1 F and Fig. 1 G; In reaction chamber, adopt the reducibility gas combination to carry out in-situ plasma technology to the surface of said structure (referring to Fig. 1 E); Through after the said in-situ plasma technology, the carbon loss that technology is brought before promptly can compensating first dielectric layer 104 as far as possible can clean the surface of first dielectric layer 104 and the first groove electro-coppering 114 again synchronously; To remove lip-deep residue, can also be to reduce reparation at the surperficial cupric oxide that forms of copper metallic region.Therefore, through after the in-situ plasma PROCESS FOR TREATMENT, can not only make the rising of the thin-film dielectric constant that CMP technology causes controlled; Make it remarkable reduction, thereby, help the improvement of device speed performance; And the surface that makes first dielectric layer 104 and the first groove electro-coppering 114 obtains cleaning; Deelectric transferred and the stress migration performance of the copper metal line of the bonding force of second dielectric barrier layer 120 of raising and subsequent deposition, and then raising simultaneously improves dielectric dielectric breakdown life-span.
Said reducibility gas combination can be the hydrogen of certain proportioning and the combination of hydrocarbon gas; Wherein, In mixture,, make said hydrocarbon in reaction chamber, can produce the carbon ion that the carbon that damages in first dielectric layer 104 is compensated through the ratio of the suitable hydrocarbon of control.
The CxHy chemical compound gas that said hydrocarbon gas can mix with other gases for CxHy gas or CxHy gas.Or hydrocarbon can be made up of the organic molecule predecessor, and is formed in the plasm reaction cavity.Said predecessor can comprise having volatile hydrocarbon or any hydrocarbon that comprises other, and preferable predecessor can be hexane derivatives a-terpinene (SubstitutedHexane Derivative a-terpinene; ATRP) [(CH
3)
2CHC
6H
6CH
3] or ethene (C
2H
4).
Said reducibility gas combination can adopt general plasma process to carry out isoionic generation or other can produce isoionic method to be used for in-situ plasma technology.
Said reducibility gas is combined in the reaction chamber and directly produces the concrete parameter that plasma carries out in-situ plasma technology and comprise: operating pressure be 2 holders to 8 holders, reaction temperature is 200 degrees centigrade to 400 degrees centigrade, under the He atmosphere, reacting gas is H
2And CxHy, wherein, H
2With the gas flow ratio of CxHy be 10 to 100.
Wherein, radio-frequency power is 25 to 2000 watts, and said hydrogen and hydrocarbon gas flow are respectively 100 to 10000sccm and 10 to 100sccm.
If in this step, want to remove synchronously steam layer 116, then the device of said structure can be exposed to for a long time under the plasma and bombarded.Simultaneously; When the dielectric constant K of dielectric material less than 2.7 the time; After said structure is through CMP and cleaning, can on the surface of first dielectric layer 104, carry out the deposition of NDC layer (Nitrogen dopped Silicon Carbite, the silicon carbide layer that nitrogen mixes) at once; Because need utilization to have the barrier layer (i.e. second dielectric barrier layer 120) of the NDC layer of performances such as good air-tightness and watertightness, to prevent the diffusion of copper as first dielectric layer 104.
Visible by technique scheme; Compare with the CMP process of the ultra-low dielectric materials of traditional common; The restorative procedure of the ultralow dielectric film that damages after the chemico-mechanical polishing disclosed by the invention; Carry out CMP process after in first dielectric barrier layer 102 and first dielectric layer 104, accomplishing the first groove electro-coppering 114; In reaction chamber, said structure carried out the The pre-heat treatment of certain hour then, remove the steam in steam, especially first dielectric layer 104 in the said structure.Subsequently; Adopt the reproducibility composition gas such as hydrogen and hydrocarbon of certain proportioning; Directly producing plasma in the reaction chamber to carrying out the in-situ plasma PROCESS FOR TREATMENT through the damascene structure surface after the CMP technology; After processing finishes, carry out the deposition of second dielectric barrier layer 120 at once.Because above-mentioned damascene structure has carried out The pre-heat treatment earlier; Especially the steam in the porous is removed one by one; Not only increased the bonding force between first dielectric layer 104 and follow-up second dielectric barrier layer 120; Avoid the especially component failure that caused by long-term erosion of steam of first dielectric barrier layer 102 and second dielectric barrier layer 120 of damascene structure simultaneously, thereby improved device performance; The carbon depletion that technology such as CMP technology were brought before the carbon that the in-situ plasma technology of carrying out then produces can compensate; Make the rising of the thin-film dielectric constant that CMP technology causes controlled; Make it remarkable reduction, and can clean dielectric material surface and copper metallic region surface synchronously, strengthened the surface of first dielectric layer 104 and copper metallic region and the bonding force between the follow-up dielectric barrier layer (i.e. second dielectric barrier layer 120); Thereby play comprehensive repair; Help the improvement of device speed performance, improve the deelectric transferred and stress migration performance of copper metal line, improve dielectric dielectric breakdown life-span.
Certainly; The restorative procedure of the ultralow dielectric film that damages after a kind of chemico-mechanical polishing disclosed by the invention includes but not limited to have only one dielectric layer, and (dielectric substance in device between this layer and the layer is called interlayer dielectric (ILD; Inter Layer Dielectric)); First through hole that forms in said in the present invention first dielectric layer can be formed at different interlayer dielectrics with irrigation canals and ditches, wherein, is formed with another dielectric barrier layer between these different interlayer dielectrics.If in actual production process, also need carry out the making of second dielectric layer or the 3rd dielectric layer even more interlayer dielectric, also belong in the spirit and scope of the present invention.Though the present invention with preferred embodiment openly as above; But it is not to be used for limiting claim; Any those skilled in the art are not breaking away from the spirit and scope of the present invention; Can make possible change and modification, so protection scope of the present invention should be as the criterion with the scope that claim of the present invention was defined.
Claims (6)
1. the restorative procedure of the ultralow dielectric film that damages after the chemico-mechanical polishing comprises the steps:
On basalis, deposit first dielectric barrier layer and first dielectric layer from the bottom to top successively, adopt etch process in first dielectric barrier layer and first dielectric layer, to form first groove;
After forming diffusion impervious layer on the surface of the sidewall of first groove and first dielectric layer, carry out the metal filled formation first groove electro-coppering;
Said structure is carried out CMP process, stop on the surface of first dielectric layer;
Carry out The pre-heat treatment, remove the steam in the said structure;
After adopting the reducibility gas combination to carry out in-situ plasma technology to the surface of said structure, carry out the deposition of second dielectric barrier layer.
2. the restorative procedure of the ultralow dielectric film that damages after the chemico-mechanical polishing according to claim 1 is characterized in that: the reaction temperature of said The pre-heat treatment is 200 degrees centigrade to 400 degrees centigrade.
3. the restorative procedure of the ultralow dielectric film that damages after the chemico-mechanical polishing according to claim 1 is characterized in that: said reducibility gas is combined as the mixture of hydrogen and hydrocarbon.
4. the restorative procedure of the ultralow dielectric film that damages after the chemico-mechanical polishing according to claim 1; It is characterized in that: the operating pressure of said in-situ plasma technology is that 2 holders are to 8 holders; Reaction temperature is 200 degrees centigrade to 400 degrees centigrade, under the He atmosphere, and reacting gas H
2And CxHy, wherein, the gas flow ratio of H2 and CxHy is 10 to 100.
5. the restorative procedure of the ultralow dielectric film that damages after the chemico-mechanical polishing according to claim 1 is characterized in that: physical gas-phase deposition is adopted in the formation of said diffusion impervious layer.
6. the restorative procedure of the ultralow dielectric film that damages after the chemico-mechanical polishing according to claim 1 is characterized in that: said metal filled employing electroplating technology.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111051975A (en) * | 2019-11-27 | 2020-04-21 | 京东方科技集团股份有限公司 | Driving substrate, preparation method thereof, light-emitting substrate and display device |
| WO2021035698A1 (en) * | 2019-08-30 | 2021-03-04 | 京东方科技集团股份有限公司 | Backplane, backlight source, display device, and method for manufacturing backplane |
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| CN101483148A (en) * | 2008-01-11 | 2009-07-15 | 台湾积体电路制造股份有限公司 | Integrated circuit structure manufacturing method |
| CN102237304A (en) * | 2011-07-05 | 2011-11-09 | 复旦大学 | Method for inhibiting porous low dielectric constant medium from absorbing water vapor |
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| WO2021035698A1 (en) * | 2019-08-30 | 2021-03-04 | 京东方科技集团股份有限公司 | Backplane, backlight source, display device, and method for manufacturing backplane |
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Application publication date: 20120620 |