CN102491330A - Production process of silicon carbide - Google Patents
Production process of silicon carbide Download PDFInfo
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- CN102491330A CN102491330A CN2011103589300A CN201110358930A CN102491330A CN 102491330 A CN102491330 A CN 102491330A CN 2011103589300 A CN2011103589300 A CN 2011103589300A CN 201110358930 A CN201110358930 A CN 201110358930A CN 102491330 A CN102491330 A CN 102491330A
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- silit
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- carbide
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Abstract
The invention relates to a technology for processing silicon carbide crystal through wasted fine silicon carbide powder, which comprises the steps of adding quartz sand and coke into a silicon carbide reaction furnace, and adding silicon carbide particles prepared by wasted fine silicon carbide powder into the silicon carbide reaction furnace before the smelting of silicon carbide. The invention provides a production technology of silicon carbide, which can prevent furnace spraying and furnace blasting, and has the advantages of high utility ratio of fine silicon carbide powder, low energy consumption, low environment pollution level, and simpleness and convenience in operation.
Description
Technical field
The invention belongs to field of material preparation, relate to a kind of production technique of silit, relate in particular to a kind of depleted carbide fine powder of utilizing and carry out the silicon carbide whisker body processing technology.
Background technology
Can produce waste greatly both ways in silit production with in using: the one, the silit ingot is being processed in the process of abrasive material, especially in the course of processing of solar wafer cutting blade material, generation is accounted for the fine powder of raw material more than 40%; The 2nd, in the cutting process of solar wafer, can produce a large amount of used useless green silicon carbide cutting material fine powders.These fine powders mostly all are used to be processed into more rudimentary refractory materials except can being used appropriately of minute quantity.Silit in process of production, its primitive reaction is: SiO
2+ 3c=Sic+2CO-498kJ; Because silicon-dioxide and carbon reaction need consume a large amount of electric power energies and raw material resources when generating silit and carbon monoxide; Caused the discharging of carbon monoxide and the consumption of electric energy to remain high, and carbide fine powder has been the resultant of silicon-dioxide and carbon reaction in smelting process; Discharged carbon monoxide and consumed electric power energy, and become the silit ingot if can carbide fine powder melted down to smelt again, the electric power energy that is consumed so and the carbon monoxide of discharging all are few.But if when silit is smelted, directly add carbide fine powder, the CO gas that produces when silit is smelted can not be discharged smoothly, very easily causes spray stove or quick-fried stove.At present, silit manufacturing enterprise has caused great waste for safety can only add the carbide fine powder of minute quantity when silit is smelted.Simultaneously, because carbide fine powder easily attached on bucket and the travelling belt, causes the batching error that quality product is descended.
Summary of the invention
In order to solve the above-mentioned technical problem that exists in the background technology, the invention provides a kind of can prevent to spray stove or quick-fried stove and the carbide fine powder utilization ratio is high, energy consumption is low, the environmental pollution degree is little and simple to operation silit production technique.
Technical solution of the present invention is: the invention provides a kind of silit production technique; Be included in the step that adds silica sand and coke in the silicon carbide reactor stove, its special character is: said silit production technique also is included in the step that in the silicon carbide reactor stove, adds the silicon-carbide particle that is prepared into by discarded carbide fine powder before silit is smelted.
Above-mentioned silicon-carbide particle is to be 5～60 according to mass ratio: 95～40 mix with the mixture of silica sand and coke; Preferably adopting silicon-carbide particle is to be 30～40 according to mass ratio: 70～60 mix with the mixture of silica sand and coke.
The particle diameter of the above-mentioned silicon-carbide particle that is prepared into by discarded carbide fine powder is 1.5～15mm, preferred 4～8mm.
The preparation method of the above-mentioned silicon-carbide particle that is prepared into by discarded carbide fine powder is:
1) chooses carbide fine powder;
2) configuration adhesive solvent;
3) with resulting carbide fine powder of step 1) and step 2) resulting adhesive solvent mixed according to mass ratio in 10: 1～2: 1;
4) adopt mechanical pelleting equipment that the resulting mixture of step 3) is carried out granulating and forming.
Above-mentioned silit production technique also comprises in step 3):
Choose and add the step that can react and generate the reaction compensative material of silit with sizing agent; The adding weight of said reaction compensative material is 0～40% of adhesive solvent adding weight; Said reaction compensative material is siliceous material or blacking.
Above-mentioned silit production technique also comprises in step 3):
Choose and add and to get rid of the carbide fine powder work in-process by the step of the impurities removal agent of contaminating impurity; Said impurities removal agent is a sodium-chlor; The adding weight of said sodium-chlor is 0～5% of carbide fine powder adding weight.
Above-mentioned adhesive solvent is to be to mix in 1: 1～1: 10 by tackiness agent and solvent according to volume ratio; Said tackiness agent is siliceous tackiness agent or carbonaceous tackiness agent; Said solvent is water or organic solvent.
When above-mentioned tackiness agent was siliceous tackiness agent, said reaction compensative material was a blacking; Said siliceous tackiness agent is the tackiness agent that contains Si element, H element and O element; Preferred silicon sol of said siliceous tackiness agent or silicone resin; Preferred petroleum coke fines of said blacking or starch.
When above-mentioned tackiness agent was the carbonaceous tackiness agent, said reaction compensative material was a siliceous material; Said carbonaceous tackiness agent is the tackiness agent that contains C element and H element or contain C element, H element and O element; Said carbonaceous tackiness agent is resol, epoxy resin, unsaturated polyester resin, pitch or starch paste preferably; Said siliceous material is fine silica or silicon sol.
Above-mentioned steps 1) in selected carbide fine powder be in the process that the silit ingot is processed into abrasive material, produced less than 1500 purpose silit tailings or cutting process in solar wafer in the useless green silicon carbide cutting blade material fine powder that produces or a spot of underproof carbide fine powder of rejecting in process of production; The mode of the granulating and forming in the said step 4) is to stir or ball milling.
Advantage of the present invention is:
The invention provides a kind of silit production technique; Tailing that this method produces when broken with silit or useless green silicon carbide cutting material, tackiness agent reaction compensative material are raw material; Behind the design proportion uniform mixing; Only contain the siliceous tackiness agent of Si, H, O element or be sizing with silicon sol, silicone resin etc., adopt mechanical pelleting equipment to be prepared into the particulate material that adds when silit is smelted of being used for of 1.5～15mm with the carbonaceous tackiness agent that pitch, resol etc. only contains C, H or C, H, O element.This particulate material is added into when smelting in the sic smelting furnace after the mixture with silica sand, coke mixes can have extraordinary ventilation property, thereby helps the interior air-flow of stove and the conduction of heat; Strengthened the recycling of silit tailing or useless green silicon carbide cutting material, energy needed when having practiced thrift generation SiC makes and can reduce by 1000～2000 degree when smelting one ton of SiC.
Embodiment
The invention provides a kind of silit production technique; Mainly solve carbide fine powder and melted down the technical problem that smelting again becomes the silit ingot; This method not only is included in the step that adds silica sand and coke in the silicon carbide reactor stove, also is included in the step that in the silicon carbide reactor stove, adds the silicon-carbide particle that is prepared into by discarded carbide fine powder before silit is smelted simultaneously.
The mixture of silicon-carbide particle and silica sand and coke is 5～60 according to mass ratio: 95～40 are added in the sic smelting furnace and smelt, and especially adopt 30～40: 70～60 such ratio effects better; The smelting district that the mixture of silicon-carbide particle and silica sand, coke can be added into the resolver of sic smelting furnace separately or be added into sic smelting furnace separately smelts, and also can add the resolver simultaneously to and smelt with smelting in the district.
The particle diameter of the silicon-carbide particle that is prepared into by discarded carbide fine powder is 1.5～15mm, preferably 4～8mm.
The method of the silicon-carbide particle that is prepared into by discarded carbide fine powder is:
1) choose carbide fine powder, this fine powder be carbide fine powder be in the process that the silit ingot is processed into abrasive material, produced less than 1500 purpose carbide fine powder or cutting process in solar wafer in the useless green silicon carbide cutting material fine powder that produces; Sometimes add a spot of underproof carbide fine powder of rejecting in process of production.
2) configuration adhesive solvent; Adhesive solvent is to be siliceous adhesive solvent or the carbonaceous adhesive solvent that mixed in 1: 1～1: 10 by tackiness agent and solvent according to volume ratio, and tackiness agent is siliceous tackiness agent or carbonaceous tackiness agent; Solvent is water or organic solvent.When adopting siliceous adhesive solvent, siliceous tackiness agent is the tackiness agent that contains Si element, H element and O element, for example silicon sol or silicone resin etc.; When adopting the carbonaceous adhesive solvent, the carbonaceous tackiness agent is the tackiness agent that contains C element and H element or contain C element, H element and O element, for example resol, epoxy resin, unsaturated polyester resin, pitch and starch etc.
3) with resulting carbide fine powder of step 1) and step 2) resulting adhesive solvent mixed according to mass ratio in 1: 0.05～1: 0.1;
4) adopt mechanical pelleting equipment that the resulting mixture of step 3) is carried out granulating and forming, the mode of granulating and forming is to stir the back by the granulating equipment granulating and forming, and final formed silicon-carbide particle material is that diameter is the particle of 1.5～15mm.
The tailing that produces when the present invention prepares with silicon carbide micro-powder is a raw material; Only contain the siliceous tackiness agent of Si, H, O element or be sizing with silicon sol etc. with the tackiness agent that resol etc. only contains C, H or C, H, O element; Adopt mechanical pelleting equipment to be prepared into the particle of 1.5～15mm; And be the mixture of silicon-carbide particle and silica sand and coke to be 5～60 according to mass ratio: 95～40 are added in the sic smelting furnace and smelt, and create new silit ingot.
Embodiment 1
(1) system mixing granulation material:
(1.1) choose carbide fine powder:
Get the fine powder that the silit ingot produces or be taken at the useless carbide fine powder that produces in the solar wafer cutting process in being processed into the process of abrasive material;
(1.2) configuration adhesive solvent:
Choose SiO
2Content accounts for 25% silicon sol;
Place whipping device to mix the above-mentioned thing of choosing, obtain the mixing granulation material; Wherein choosing in the thing carbide fine powder and adhesive solvent, respectively to account for mass percent be 3～3.5: 1 (adjustment of the mass percent that carbide fine powder is shared is because its granularity is different);
(2) place mechanical pelleting equipment to process the 8mm particulate material in the mixing granulation material;
(3) silicon-carbide particle that will make through after the drying treatment with the mixture of silica sand and coke according to mass ratio 30～35: 70～65 ratio be added in the sic smelting furnace the resolver with smelt the district and smelt, make new silit ingot.
Embodiment 2
(1) system mixing granulation material:
(1.1) choose carbide fine powder:
Get the fine powder that the silit ingot produces or be taken at the useless carbide fine powder that produces in the solar wafer cutting process in being processed into the process of abrasive material;
(1.2) configuration adhesive solvent:
Choose SiO
2Content accounts for 25% silicon sol;
(1.3) choose the reaction compensative material:
Get starch and water and be mixed with mixing solutions by weight 1: 4;
(1.4) choose impurities removal agent sodium-chlor:
Get the impurities removal agent sodium-chlor that is processed into fine powder;
Place whipping device to mix the above-mentioned thing of choosing, obtain the mixing granulation material; Wherein choosing in the thing carbide fine powder and adhesive solvent, respectively to account for mass percent be 6～6.5: 1 (adjustment of the mass percent that carbide fine powder is shared is because its granularity is different); It is 1: 1 by the mass percent of reaction compensative material solution and adhesive solvent that compensative material is answered in negate; Get impurities removal agent sodium-chlor by the mass percent of impurities removal agent sodium-chlor and carbide fine powder 1: 80;
(2) place mechanical pelleting equipment to process the 10mm particulate material in the mixing granulation material;
(3) silicon-carbide particle that will make through after the drying treatment with the mixture of silica sand and coke according to mass ratio 30～35: 70～65 ratio adds resolver in the smelting furnace, according to mass ratio 20～25: 80～75 ratio adds smelting of smelting district in the smelting furnace, makes new silit ingot.
Claims (10)
1. silit production technique; Be included in the step that adds silica sand and coke in the silicon carbide reactor stove, it is characterized in that: said silit production technique also is included in the step that in the silicon carbide reactor stove, adds the silicon-carbide particle that is prepared into by discarded carbide fine powder before silit is smelted.
2. silit production technique according to claim 1 is characterized in that: said silicon-carbide particle is to be 5～60 according to mass ratio: 95～40 mix with the mixture of silica sand and coke; Preferably adopting silicon-carbide particle is to be 30～40 according to mass ratio: 70～60 mix with the mixture of silica sand and coke.
3. silit production technique according to claim 1 and 2 is characterized in that: the particle diameter of the said silicon-carbide particle that is prepared into by discarded carbide fine powder is 1.5～15mm, preferred 4～8mm.
4. silit production technique according to claim 3 is characterized in that: the preparation method of the said silicon-carbide particle that is prepared into by discarded carbide fine powder is:
1) chooses carbide fine powder;
2) configuration adhesive solvent;
3) with resulting carbide fine powder of step 1) and step 2) resulting adhesive solvent mixed according to mass ratio in 10: 1～2: 1;
4) adopt mechanical pelleting equipment that the resulting mixture of step 3) is carried out granulating and forming.
5. silit production technique according to claim 1 is characterized in that: said silit production technique also comprises in step 3):
Choose and add the step that can react and generate the reaction compensative material of silit with sizing agent; The adding weight of said reaction compensative material is 0～40% of adhesive solvent adding weight; Said reaction compensative material is siliceous material or blacking.
6. silit production technique according to claim 5 is characterized in that: said silit production technique also comprises in step 3):
Choose and add and to get rid of the carbide fine powder work in-process by the step of the impurities removal agent of contaminating impurity; Said impurities removal agent is a sodium-chlor; The adding weight of said sodium-chlor is 0～5% of carbide fine powder adding weight.
7. silit production technique according to claim 6 is characterized in that: said adhesive solvent is to be to mix in 1: 1～1: 10 by tackiness agent and solvent according to volume ratio; Said tackiness agent is siliceous tackiness agent or carbonaceous tackiness agent; Said solvent is water or organic solvent.
8. silit production technique according to claim 7 is characterized in that: when said tackiness agent was siliceous tackiness agent, said reaction compensative material was a blacking; Said siliceous tackiness agent is the tackiness agent that contains Si element, H element and O element; Preferred silicon sol of said siliceous tackiness agent or silicone resin; Preferred petroleum coke fines of said blacking or starch.
9. silit production technique according to claim 7 is characterized in that: when said tackiness agent was the carbonaceous tackiness agent, said reaction compensative material was a siliceous material; Said carbonaceous tackiness agent is the tackiness agent that contains C element and H element or contain C element, H element and O element; Said carbonaceous tackiness agent is resol, epoxy resin, unsaturated polyester resin, pitch or starch paste preferably; Said siliceous material is fine silica or silicon sol.
10. silit production technique according to claim 7 is characterized in that: in the said step 1) selected carbide fine powder be in the process that the silit ingot is processed into abrasive material, produced less than 1500 purpose silit tailings or cutting process in solar wafer in the useless green silicon carbide cutting blade material fine powder that produces or a spot of underproof carbide fine powder of rejecting in process of production; The mode of the granulating and forming in the said step 4) is to stir or ball milling.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011103589300A CN102491330B (en) | 2011-11-14 | 2011-11-14 | Production process of silicon carbide |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2011103589300A CN102491330B (en) | 2011-11-14 | 2011-11-14 | Production process of silicon carbide |
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| CN102491330B CN102491330B (en) | 2013-11-06 |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103539122A (en) * | 2013-10-12 | 2014-01-29 | 台州市一能科技有限公司 | Silicon carbide preparation method |
| CN103693646A (en) * | 2013-12-23 | 2014-04-02 | 湖南大学 | Method for spheroidizing and purifying silicon carbide micropowder |
| CN106006645A (en) * | 2016-05-20 | 2016-10-12 | 朱胜利 | Method for smelting silicon carbide chunked crystal by using prefabrication waste micro-powdery particles |
| CN107573077A (en) * | 2017-10-18 | 2018-01-12 | 重庆奥福精细陶瓷有限公司 | Recrystallized silicon carbide diesel vehicle soot grain catcher and preparation method thereof |
| CN108046266A (en) * | 2017-12-22 | 2018-05-18 | 西北工业大学 | The preparation method of silicon carbide nanometer line thin-film material |
| CN109678520A (en) * | 2019-01-24 | 2019-04-26 | 启东市乘龙密封有限公司 | Anti-wear sleeve carborundum ring production technology |
| CN115215662A (en) * | 2021-04-21 | 2022-10-21 | 威海华瓷新材料有限责任公司 | Raw material formula and preparation method of pressureless sintering silicon carbide granulation powder and waste recovery and powder preparation process |
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| CN1042522A (en) * | 1988-11-08 | 1990-05-30 | 东北工学院 | The preparation method of silicon carbide |
| CN1962436A (en) * | 2006-11-29 | 2007-05-16 | 黄东 | Metal silicon purification process and equipment thereof |
| CN101254919A (en) * | 2008-04-07 | 2008-09-03 | 河南醒狮高新技术股份有限公司 | In-situ synthesis of high-pure green 6H-SiC |
-
2011
- 2011-11-14 CN CN2011103589300A patent/CN102491330B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1042522A (en) * | 1988-11-08 | 1990-05-30 | 东北工学院 | The preparation method of silicon carbide |
| CN1962436A (en) * | 2006-11-29 | 2007-05-16 | 黄东 | Metal silicon purification process and equipment thereof |
| CN101254919A (en) * | 2008-04-07 | 2008-09-03 | 河南醒狮高新技术股份有限公司 | In-situ synthesis of high-pure green 6H-SiC |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103539122A (en) * | 2013-10-12 | 2014-01-29 | 台州市一能科技有限公司 | Silicon carbide preparation method |
| CN103693646A (en) * | 2013-12-23 | 2014-04-02 | 湖南大学 | Method for spheroidizing and purifying silicon carbide micropowder |
| CN103693646B (en) * | 2013-12-23 | 2015-03-25 | 湖南大学 | Method for spheroidizing and purifying silicon carbide micropowder |
| CN106006645A (en) * | 2016-05-20 | 2016-10-12 | 朱胜利 | Method for smelting silicon carbide chunked crystal by using prefabrication waste micro-powdery particles |
| CN107573077A (en) * | 2017-10-18 | 2018-01-12 | 重庆奥福精细陶瓷有限公司 | Recrystallized silicon carbide diesel vehicle soot grain catcher and preparation method thereof |
| CN108046266A (en) * | 2017-12-22 | 2018-05-18 | 西北工业大学 | The preparation method of silicon carbide nanometer line thin-film material |
| CN109678520A (en) * | 2019-01-24 | 2019-04-26 | 启东市乘龙密封有限公司 | Anti-wear sleeve carborundum ring production technology |
| CN115215662A (en) * | 2021-04-21 | 2022-10-21 | 威海华瓷新材料有限责任公司 | Raw material formula and preparation method of pressureless sintering silicon carbide granulation powder and waste recovery and powder preparation process |
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| CN102491330B (en) | 2013-11-06 |
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Granted publication date: 20131106 Termination date: 20191114 |