CN102479844A - Thin-film solar cell composition structure for blocking infrared light - Google Patents
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Abstract
The invention relates to a thin-film solar cell composition structure for blocking infrared light. The thin-film solar cell composition structure at least comprises a first semitransparent conducting metal layer, a p-i-n semiconductor layer and a transparent base plate, wherein the first semitransparent conducting metal layer is transition metal or aluminum with the characteristic of reflecting infrared light, thus the heat-insulating effect can be reached and the resistance can be simultaneously reduced, the available power can be raised and the conversion efficiency can be improved further. The invention also provides another thin-film solar cell composition structure for blocking infrared light, and the thin-film solar cell composition structure at least comprises a first semitransparent conducting metal layer, a p-i-n semiconductor layer and a transparent base plate, and also can reach the heat-insulating effect, reduce the capacitance, raise the available power and improve the conversion efficiency.
Description
Technical field
The invention relates to a kind of thin-film solar cells composition structure that is used to intercept infrared light, refer to a kind of effective obstruct infrared light especially and have the thin-film solar cells composition structure of high conductivity.
Background technology
Grow up because of the global solar market demand, when the river rises the boat goes up to cause silicon starving, silicon wafer solar cell and module production cost.And advantages such as thin-film solar cells is frivolous because of having, low-cost, deflection, various appearances design become after the silicon wafer solar cell, are considered to the most potential current heliotechnics.
The technology of solar power generation mainly is divided into silicon metal (Wafer base) and film (T hin Film base) solar cell two big classes according to the manufacturing process differentiation.Wherein because of silicon has advantages such as avirulence, oxide are stable, add that the existing mature and stable industrial treatment technology of industrial circle handles silicon materials, therefore, the silicon wafer solar cell is the existing market application mainstream, accounts for the world market and reaches ninety percent approximately.
Yet, since in recent years states such as Germany, Spain under the solar boosted policy implication, powerful the raising of the solar cell module market demand, 2007, the demand of solar cell module heated, once cause the silicon raw material seriously the short supply, price skyrockets.Though since 2008 second half year, left successively because of polysilicon manufacturer production capacity, add that the market demand eases up, impel the silicon cost of material to downgrade gradually, the unsettled experience of silicon cost of material has let solar energy manufacturer realize the importance of scattered risks more; Moreover the silicon wafer solar energy industry is because of equipment and manufacturing process technology is ripe, entry threshold is low, and in numerous competitors' industry, the high gross profit epoch in the past have been difficult to see again, impel solar energy manufacturer to quicken to research and develop feeler turning film area of solar cell.
Thin-film solar cells as its name suggests, is on plastic cement, glass or metal substrate, to form to produce photoelectric film, and thickness only needs number μ m, therefore under same light-receiving area, can significantly reduce the consumption of raw material than the Silicon Wafer solar cell.Thin-film solar cells is not to be the product of new ideas; In fact; Artificial satellite generally adopted the high conversion efficiency thin-film solar cell panel made from GaAs (GaAs) (as substrate, conversion usefulness can reach more than 30% with monocrystalline silicon) to generate electricity already in the past, but its cost is expensive; Be used to the too industry of navigating more, can't popularize now.So present industry main flow adopts amorphous silicon (a-Si) to make the light absorbing zone of thin-film solar cells (being semiconductor layer) more.Thin-film solar cells can be made on cheap glass, plastic cement or stainless steel substrate in a large number; To produce large-area solar cell; And its manufacturing process more can directly import quite ripe TFT-LCD manufacturing process; This is one of its advantage, so industry falls over each other to drop into the research in this field invariably.
Basically, the solar cell manufacturing process of the relative other types of thin-film solar cells is comparatively simple, has that cost is low, the mass producible advantage.With regard to the composition of thin-film solar cell substrate; Its basic manufacturing process can be through three layers of deposition (deposition), three road laser scribing (scribe) formalities; As described below: at first, earlier with physical gas-phase deposition (PVD) on the glass substrate of subscribing size, plate the layer of transparent conductive film (Transparent Conductive Oxide, TCO); It selects light transmission height and the good material of conductivity, like tin indium oxide (ITO), tin oxide (SnO2) or zinc oxide (ZnO) etc.Then with its preceding electrode pattern (patterning) of infrared laser line definition.So far be first road deposition and line formality.Second stage is the making of main absorbed layer (Active layer); As the one of which with plasma-assisted chemical vapour deposition (PlasmaEnhanced Chemical Vapor Deposition; PECVD) technology grows the hydrogenated amorphous silicon structure (p-a-Si:H/i-a-Si:H/n-a-Si:H) of one deck p-i-n type arrangement on electrode surface, and this main absorbed layer is with the agent structure of p-n semiconductor junction (p-n junction) as light absorption and power conversion.Can carry out the laser scribing step equally after this step, be the main absorbed layer define pattern of producing, so far be second road deposition and line formality.Form the back electrode that aluminium/silver-colored material is the master (back contact) above that with sputter (sputter) technology more at last, and carry out the 3rd road laser scribing and define its back electrode figure.
So because of using transparency conducting layer in the transparency of visible region, the semiconductor of the transparency conducting layer of being selected for use must be the semiconductor of wide energy gap, so select for use the energy gap width must be greater than the semiconductor of the transparency conducting layer of visible light energy scope; So increased the integral thickness of thin-film solar cells, and for increasing the conduction property of transparency conducting layer, general mode by the doping trace impurity; Promote its conductivity; So technology comparatively bothers, and therefore, how effectively to intercept infrared light to reach energy-saving effect; And how to reduce the thin film solar integral thickness and how to improve light transmittance and the efficient of absorptivity and opto-electronic conversion, industry is needed the problem of solution badly for this reason.
Summary of the invention
The object of the present invention is to provide a kind of in order to intercept the thin-film solar cells composition structure of infrared light; Technical problem to be solved is to make it have the characteristic of reflects infrared light by translucent conductive metal layer of the present invention, and reaches heat insulation effect effectively.
Another object of the present invention is to provide a kind of and form structure in order to the thin-film solar cells that intercepts infrared light; Technical problem to be solved is to make it utilize translucent conductive metal layer to reduce resistance value effectively; To increase conductance, power capable of using is risen, thereby improve the efficient of conversion.
A purpose more of the present invention is to provide a kind of thin-film solar cells composition structure that is used to intercept infrared light; Technical problem to be solved is to make it replace the nesa coating of existing convention by translucent conductive metal layer; Increase photosphere and penetration length effectively; And the increase reflective character, to increase whole conversion efficiency.
To achieve these goals; A kind of thin-film solar cells composition structure that is used to intercept infrared light according to the present invention's proposition; At least comprise: one first translucent conductive metal layer have the characteristic of a reflects infrared light, and the one side of this first translucent conductive metal layer is a shadow surface; In order to receiving a natural daylight, and in order to take out electric energy and the efficient that promotes opto-electronic conversion; One p-i-n semiconductor layer, it is formed at this first translucent conductive metal layer below, in order to produce electron hole pair (or be called electronics electricity hole to), photoelectric current to be provided and to increase absorptivity; And a transparency carrier, it is formed at this p-i-n semiconductor layer below.
Thin-film solar cells of the present invention is formed structure, further comprises one second translucent conductive metal layer, is formed between aforementioned transparency carrier and the p-i-n semiconductor layer.
To achieve these goals; According to the present invention the thin-film solar cells composition structure that another kind is used to intercept infrared light is proposed also; At least comprise: one first translucent conductive metal layer have the characteristic of a reflects infrared light, and the one side of this first translucent conductive metal layer is a shadow surface; In order to receiving a natural daylight, and in order to take out electric energy and the efficient that promotes opto-electronic conversion; One n-i-p semiconductor layer, it is formed at this first translucent conductive metal layer below, in order to produce electron hole pair, photoelectric current to be provided and to increase absorptivity; And a transparency carrier, it is formed at this n-i-p semiconductor layer below.
Thin-film solar cells of the present invention is formed structure, further comprises one second translucent conductive metal layer, is formed between aforementioned transparency carrier and the n-i-p semiconductor layer.
The present invention also can adopt following technical measures further to realize.
The aforesaid thin-film solar cells composition structure that is used to intercept infrared light, the material of wherein said transparency carrier is glass, quartz, perspex, sapphire substrate or transparent flexual material.
The aforesaid thin-film solar cells composition structure that is used to intercept infrared light, the wherein said first translucent conductive metal layer and the second translucent conductive metal layer are single transition metal or aluminium; Or said first translucent conductive metal layer and the second translucent conductive metal layer comprise one of them of one first transparent conductive oxide and a transition metal or aluminium; Also or the said first translucent conductive metal layer and the second translucent conductive metal layer comprise one of them and one second transparent conductive oxide of one first transparent conductive oxide, a transition metal or aluminium.
The aforesaid thin-film solar cells composition structure that is used to intercept infrared light, wherein said transition metal is silver or nickel, the thickness of wherein said silver is between 3nm～25nm.
The aforesaid thin-film solar cells composition structure that is used to intercept infrared light, wherein said first transparent conductive oxide and second transparent conductive oxide are zinc oxide aluminum (AZO), zinc-gallium oxide (GZO) or zinc oxide boron (ZnO).
The present invention compared with prior art has tangible advantage and beneficial effect.By technique scheme, the thin-film solar cells composition structure that is used to intercept infrared light of the present invention has advantage at least: the present invention is used to intercept the thin-film solar cells composition structure of infrared light; Have the characteristic of reflects infrared light by translucent conductive metal layer of the present invention, and reach heat insulation effect effectively, and utilize translucent conductive metal layer to reduce resistance value effectively; To increase conductance, power capable of using is risen, thereby improve the efficient of conversion; And replace the nesa coating of existing convention by translucent conductive metal layer; Increase photosphere and penetration length effectively, and increase reflective character, to increase whole conversion efficiency.
Description of drawings
Fig. 1 is the thin-film solar cells composition structure chart that is used to intercept infrared light of first embodiment of the invention.
Fig. 2 is the thin-film solar cells composition structure chart that is used to intercept infrared light of second embodiment of the invention.
Fig. 3 is the thin-film solar cells composition structure chart that is used to intercept infrared light of third embodiment of the invention.
Fig. 4 is the thin-film solar cells composition structure chart that is used to intercept infrared light of fourth embodiment of the invention.
Fig. 5 is that first of thin-film solar cells that the present invention is used to the to intercept infrared light first translucent conductive metal layer and the second translucent conductive metal layer of forming structure implemented structure graph.
Fig. 6 is that second of thin-film solar cells that the present invention is used to the to intercept infrared light first translucent conductive metal layer and the second translucent conductive metal layer of forming structure implemented structure graph.
Fig. 7 is that the 3rd of thin-film solar cells that the present invention is used to the to intercept infrared light first translucent conductive metal layer and the second translucent conductive metal layer of forming structure implemented structure graph.
100: thin-film solar cells is formed structure
10,10 ': the first translucent conductive metal layer
20,20 ': the p-i-n semiconductor layer
30,30 ': transparency carrier
40: the second translucent conductive metal layers
50,50 ', 50 ": first transparent conductive oxide
60: the second transparent conductive oxides
70,70 ': the n-i-p semiconductor layer
Embodiment
Reach technological means and the effect that predetermined goal of the invention is taked for further setting forth the present invention; Below in conjunction with accompanying drawing and preferred embodiment, to its embodiment of thin-film solar cells composition structure, step, structure, characteristic and the effect detailed description thereof that are used to intercept infrared light that proposes according to the present invention.
Seeing also Fig. 1, is the thin-film solar cells composition structure chart that is used to intercept infrared light of first embodiment of the invention.The present invention is used to intercept the thin-film solar cells composition structure 100 of infrared light; At least comprise: one first translucent conductive metal layer 10; Characteristic with a reflects infrared light; And the one side of this first translucent conductive metal layer 10 is irradiation faces, in order to receiving a natural daylight, and in order to take out electric energy and the efficient that promotes opto-electronic conversion; One p-i-n semiconductor layer 20 is formed at the below of these first translucent conductive metal layer 10 another sides, in order to produce electron hole pair, electric current to be provided and to increase absorptivity; And at least one transparency carrier 30, it is formed at this p-i-n semiconductor layer 20 belows.
In the present embodiment, the material of this transparency carrier 30 can use general glass, quartz, perspex, sapphire substrate or transparent flexual material or the like.
This first translucent conductive metal layer 10, can be single transition metal or aluminium one of them, this transition metal for example is silver or nickel or the like; With silver is example; The thickness of silver is between 3nm～25nm, and the characteristic of silver has good light transmittance and because of silver-colored tool reduces the characteristic of resistance value, therefore has favorable conductive character at visible-range; Preferably, the thickness of silver is between 3nm～5nm, 10nm～15nm and 20nm～25nm.Because of the very thin thickness of silver, the integral thickness of thin-film solar cells is reduced in addition.
In other present embodiment, this first translucent conductive metal layer 10, because single transition metal or aluminium, so have the characteristic of reflects infrared light, and can reach heat insulation effect.
When the irradiation face of this first translucent conductive metal layer 10 receives solar light irradiation,, enter to this p-i-n semiconductor layer 20 so can intercept infrared light because of this first half passes through conductive metal layer 10 and have the characteristic of reflects infrared light; To reach heat insulation effect, all the other light then can enter to this p-i-n semiconductor layer 20 by penetrating this first translucent conductive metal layer 10, and solar light irradiation is connect on the face in pn; In order to do making partly electronics because of having enough energy, leave atom and become free electron, lose the atom thereby the generation hole of electronics; And see through the p N-type semiconductor N and the n N-type semiconductor N attracts hole and electronics respectively, and separate positive electricity and negative electricity, connect face two ends thereby generation potential difference at pn; Connect circuit (figure does not show) by this first translucent conductive metal layer 10 again, make electronics be able to through, and combine once more with the hole that connects the face other end at pn; Just produce electric current; Take out electric energy by this first translucent conductive metal layer 10 again, to convert available power to, in order to do making the present invention except effectively light being converted into the electric energy; Also simultaneously with heat insulation effect; And because of the of the present invention first translucent conductive metal layer 10 is transition metal or aluminium, it has good electrical conductivity, and for making at visible-range good light transmittance is arranged; The thickness of the of the present invention first translucent conductive metal layer 10 is moderate, to avoid producing discontinuous island film.
The present invention is used to intercept the thin-film solar cells composition structure 100 of infrared light; Because of having effect of heat insulation; So applicable to the window of building, building curtain wall, indoor agricultural plantation etc.; To intercept the irradiation of infrared light effectively, effectively reduce indoor temperature and reduce the electric weight that room lighting consumed, to reach the purpose of saving the energy.
Seeing also Fig. 2, is the thin-film solar cells composition structure chart that is used to intercept infrared light of second embodiment of the invention.The present invention is used to intercept the thin-film solar cells composition structure 100 of infrared light; At least comprise: one first translucent conductive metal layer 10 '; Characteristic with a reflects infrared light; And the one side of this first translucent conductive metal layer 10 ' is an irradiation face, in order to receiving a natural daylight, and in order to take out electric energy and the efficient that promotes opto-electronic conversion; One p-i-n semiconductor layer 20 ' is formed at this first translucent conductive metal layer, 10 ' below, in order to produce electron hole pair, electric current to be provided and to increase absorptivity; At least one second translucent conductive metal layer 40 is formed at the below of this p-i-n semiconductor layer 20 ', in order to take out electric energy and the efficient that promotes opto-electronic conversion; And a transparency carrier 30 ', it is formed at this second translucent conductive metal layer, 40 belows, in order to take out electric energy and the efficient that promotes opto-electronic conversion.
In the present embodiment, the material of this transparency carrier 30 ' can use general glass, quartz, perspex, sapphire substrate or transparent flexual material or the like.
This first translucent conductive metal layer 10 ' and the second translucent conductive metal layer 40, can be single transition metal or aluminium one of them, this transition metal for example is silver or nickel or the like; With silver is example; The thickness of silver is between 3nm～25nm, and the characteristic of silver has good light transmittance and because of silver-colored tool reduces the characteristic of resistance value, therefore has favorable conductive character at visible-range; Preferably, the thickness of silver is between 3nm～5nm, 10nm～15nm and 20nm～25nm.Because of the very thin thickness of silver, the integral thickness of thin-film solar cells is reduced in addition.
In other present embodiment, this first translucent conductive metal layer 10, because single transition metal or aluminium, so have the characteristic of reflects infrared light, and can reach heat insulation effect.
When the irradiation face of this first translucent conductive metal layer 10 ' receives solar light irradiation,, enter to this p-i-n semiconductor layer 20 so can intercept infrared light because of this first half passes through conductive metal layer 10 ' and have the characteristic of reflects infrared light; To reach heat insulation effect, all the other light then can enter to this p-i-n semiconductor layer 20 ' by penetrating this first translucent conductive metal layer 10 ', and solar light irradiation is connect on the face in pn; In order to do making partly electronics because of having enough energy, leave atom and become free electron, lose the atom thereby the generation hole of electronics; And see through the p N-type semiconductor N and the n N-type semiconductor N attracts hole and electronics respectively; Separate positive electricity and negative electricity, connect the face two ends thereby produce potential difference, respectively connect a circuit (figure does not show) by this first translucent conductive metal layer 10 ' and the second translucent conductive metal layer 40 again at pn; Make electronics be able to through; And combine once more with the hole that connects the face other end at pn, just produce electric current, take out electric energy by this first translucent conductive metal layer 10 ' and this second translucent conductive metal layer 40 again; To convert available power to; In order to do making the present invention except effectively light being converted into the electric energy, also simultaneously with heat insulation effect, and because of the of the present invention first translucent conductive metal layer 10 ' and the second translucent conductive metal layer 40 be transition metal or aluminium; It has good electrical conductivity; And for making at visible-range good light transmittance is arranged, the thickness of the of the present invention first translucent conductive metal layer 10 ' and the second translucent conductive metal layer 40 is moderate, to avoid producing discontinuous island film.
The present invention is used to intercept the thin-film solar cells composition structure 100 of infrared light; Because of having effect of heat insulation; So applicable to the window of building, building curtain wall, indoor agricultural plantation etc.; To intercept the irradiation of infrared light effectively, effectively reduce indoor temperature and reduce the electric weight that room lighting consumed, to reach the purpose of saving the energy.
Seeing also Fig. 3, is the thin-film solar cells composition structure chart that is used to intercept infrared light of third embodiment of the invention.In the present embodiment, its general configuration is identical with first embodiment of the invention, and difference is; P-i-n layer 20 is changed into-n-i-p layer 70, can be reached heat insulation effect equally, and can reduce resistance value simultaneously; Power capable of using is risen, thereby improve the efficient of conversion.
Seeing also Fig. 4, is the thin-film solar cells composition structure chart that is used to intercept infrared light of fourth embodiment of the invention.In the present embodiment, its general configuration is identical with second embodiment of the invention, and difference is; P-i-n layer 20 ' is changed into-n-i-p layer 70 ', can be reached heat insulation effect equally, and can reduce resistance value simultaneously; Power capable of using is risen, thereby improve the efficient of conversion.
Seeing also Fig. 5, is that thin-film solar cells of the present invention is formed first translucent conductive metal layer of structure and the first enforcement structure graph of the second translucent conductive metal layer.First translucent conductive metal layer 10,10 ' and the second translucent conductive metal layer 40 that thin-film solar cells of the present invention is formed structure 100 is except can be single transition metal or aluminium one of them; Also can be one of them that comprises one first transparent conductive oxide 50 and a transition metal or aluminium; At present embodiment; This first transparent conductive oxide 50 is the tops that are formed at this transition metal or aluminium; This first transparent conductive oxide can be zinc oxide aluminum (AZO), zinc-gallium oxide (GZO) or zinc oxide boron (ZnO) or the like transparent conductive oxide, and these a little transparent conductive oxides have lower resistivity, in order to do making the penetrance that increases light.
Seeing also Fig. 6, is that thin-film solar cells of the present invention is formed first translucent conductive metal layer of structure and the second enforcement structure graph of the second translucent conductive metal layer.First translucent conductive metal layer 10,10 ' and the second translucent conductive metal layer 40 of thin-film solar cells composition structure 100 of the present invention comprises one of them of one first transparent conductive oxide 50 ' and a transition metal or aluminium; At present embodiment; This first transparent conductive oxide 50 ' is the below that is formed at this transition metal or aluminium; This first transparent conductive oxide 50 ' can be zinc oxide aluminum (AZO), zinc-gallium oxide (GZO) or zinc oxide boron (ZnO) or the like transparent conductive oxide; These a little transparent conductive oxides have lower resistivity, in order to do making the penetrance that increases light.
Seeing also Fig. 7, is that thin-film solar cells of the present invention is formed first translucent conductive metal layer of structure and the 3rd enforcement structure graph of the second translucent conductive metal layer.First translucent conductive metal layer 10,10 ' and the second translucent conductive metal layer 40 that thin-film solar cells of the present invention is formed structure 100 comprises one first transparent conductive oxide 50 ", one of them and one second transparent conductive oxide 60 of a transition metal or aluminium; in the present embodiment; this transition metal or aluminium are to place this first transparent conductive oxide 50 " and second transparent conductive oxide 60 between; This first transparent conductive oxide 50 " and second transparent conductive oxide 60 can be zinc oxide aluminum (AZO), zinc-gallium oxide (GZO) or zinc oxide boron (ZnO) or the like transparent conductive oxide; these a little transparent conductive oxides have lower resistivity, in order to do making the penetrance that increases light.
The present invention is used to intercept the thin-film solar cells composition structure of infrared light, has the characteristic of reflects infrared light by translucent conductive metal layer of the present invention, and reaches heat insulation effect effectively; And utilize translucent conductive metal layer to reduce resistance value effectively; To increase conductance, power capable of using is risen, thereby improve the efficient of conversion; And replace the nesa coating of existing convention by translucent conductive metal layer; Increase photosphere and penetration length effectively, and increase reflective character, to increase whole conversion efficiency.
Though the present invention discloses as above with preferred embodiment, so be not the scope of implementing in order to qualification the present invention, the simple equivalent of doing according to claims of the present invention and description changes and modification, still belongs to the scope of technical scheme of the present invention.
Claims (18)
1. a thin-film solar cells that is used to intercept infrared light is formed structure, it is characterized in that comprising at least:
One first translucent conductive metal layer has the characteristic of a reflects infrared light, and the one side of this first translucent conductive metal layer is the irradiation face, in order to receiving a natural daylight, and in order to take out electric energy and the efficient that promotes opto-electronic conversion;
One p-i-n semiconductor layer, it is formed at this first translucent conductive metal layer below, in order to produce electron hole pair, photoelectric current to be provided and to increase absorptivity; And
One transparency carrier, it is formed at this p-i-n semiconductor layer below.
2. the thin-film solar cells composition structure that is used to intercept infrared light as claimed in claim 1 is characterized in that it further comprises one second translucent conductive metal layer, is formed between aforementioned transparency carrier and the p-i-n semiconductor layer.
3. the thin-film solar cells composition structure that is used to intercept infrared light as claimed in claim 1, the material that it is characterized in that wherein said transparency carrier is glass, quartz, perspex, sapphire substrate or transparent flexual material.
4. the thin-film solar cells composition structure that is used to intercept infrared light as claimed in claim 1 is characterized in that the wherein said first translucent conductive metal layer and the second translucent conductive metal layer are single transition metal or aluminium.
5. the thin-film solar cells composition structure that is used to intercept infrared light as claimed in claim 1 is characterized in that the wherein said first translucent conductive metal layer and the second translucent conductive metal layer comprise one of them of one first transparent conductive oxide and a transition metal or aluminium.
6. the thin-film solar cells that is used to intercept infrared light as claimed in claim 1 is formed structure, it is characterized in that the wherein said first translucent conductive metal layer and the second translucent conductive metal layer comprise one of them and one second transparent conductive oxide of one first transparent conductive oxide, a transition metal or aluminium.
7. like the described thin-film solar cells composition structure that is used to intercept infrared light of arbitrary claim in the claim 4 to 6, it is characterized in that wherein said transition metal is silver or nickel.
8. the thin-film solar cells composition structure that is used to intercept infrared light as claimed in claim 7, the thickness that it is characterized in that wherein said silver is between 3nm～25nm.
9. like claim 5 or the 6 described thin-film solar cells composition structures that are used to intercept infrared light, it is characterized in that wherein said first transparent conductive oxide and second transparent conductive oxide are zinc oxide aluminum, zinc-gallium oxide or zinc oxide boron.
10. a thin-film solar cells that is used to intercept infrared light is formed structure, it is characterized in that comprising at least:
One first translucent conductive metal layer has the characteristic of a reflects infrared light, and the one side of this first translucent conductive metal layer is the irradiation face, in order to receiving a natural daylight, and in order to take out electric energy and the efficient that promotes opto-electronic conversion;
One n-i-p semiconductor layer, it is formed at this first translucent conductive metal layer below, in order to produce electron hole pair, photoelectric current to be provided and to increase absorptivity; And
One transparency carrier, it is formed at this n-i-p semiconductor layer below.
11. the thin-film solar cells composition structure that is used to intercept infrared light as claimed in claim 10 is characterized in that it further comprises one second translucent conductive metal layer, is formed between aforementioned transparency carrier and the n-i-p semiconductor layer.
12. the thin-film solar cells composition structure that is used to intercept infrared light as claimed in claim 10, the material that it is characterized in that wherein said transparency carrier is glass, quartz, perspex, sapphire substrate or transparent flexual material.
13. the thin-film solar cells composition structure that is used to intercept infrared light as claimed in claim 10 is characterized in that the wherein said first translucent conductive metal layer and the second translucent conductive metal layer are single transition metal or aluminium.
14. the thin-film solar cells composition structure that is used to intercept infrared light as claimed in claim 10 is characterized in that the wherein said first translucent conductive metal layer and the second translucent conductive metal layer comprise one of them of one first transparent conductive oxide and a transition metal or aluminium.
15. the thin-film solar cells that is used to intercept infrared light as claimed in claim 10 is formed structure, it is characterized in that the wherein said first translucent conductive metal layer and the second translucent conductive metal layer comprise one of them and one second transparent conductive oxide of one first transparent conductive oxide, a transition metal or aluminium.
16., it is characterized in that wherein said transition metal is silver or nickel like the described thin-film solar cells composition structure that is used to intercept infrared light of arbitrary claim in the claim 13 to 15.
17. the thin-film solar cells composition structure that is used to intercept infrared light as claimed in claim 16, the thickness that it is characterized in that wherein said silver is between 3nm～25nm.
18., it is characterized in that wherein said first transparent conductive oxide and second transparent conductive oxide are zinc oxide aluminum, zinc-gallium oxide or zinc oxide boron like claim 14 or the 15 described thin-film solar cells composition structures that are used to intercept infrared light.
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| US4330182A (en) * | 1977-12-05 | 1982-05-18 | Plasma Physics Corporation | Method of forming semiconducting materials and barriers |
| CN1638153A (en) * | 2004-01-09 | 2005-07-13 | 三菱重工业株式会社 | Photovoltaic device |
| CN101622721A (en) * | 2007-02-28 | 2010-01-06 | 东进世美肯株式会社 | Transparent electrode for solar cell and method for preparing the same |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4330182A (en) * | 1977-12-05 | 1982-05-18 | Plasma Physics Corporation | Method of forming semiconducting materials and barriers |
| US4330182B1 (en) * | 1977-12-05 | 1999-09-07 | Plasma Physics Corp | Method of forming semiconducting materials and barriers |
| CN1638153A (en) * | 2004-01-09 | 2005-07-13 | 三菱重工业株式会社 | Photovoltaic device |
| CN101622721A (en) * | 2007-02-28 | 2010-01-06 | 东进世美肯株式会社 | Transparent electrode for solar cell and method for preparing the same |
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Application publication date: 20120530 |