CN102479745B - Field plate metal preparation method suitable for gallium nitride monolithic microwave integrated circuit (GaN MMIC) - Google Patents
Field plate metal preparation method suitable for gallium nitride monolithic microwave integrated circuit (GaN MMIC) Download PDFInfo
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- CN102479745B CN102479745B CN2010105611338A CN201010561133A CN102479745B CN 102479745 B CN102479745 B CN 102479745B CN 2010105611338 A CN2010105611338 A CN 2010105611338A CN 201010561133 A CN201010561133 A CN 201010561133A CN 102479745 B CN102479745 B CN 102479745B
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Abstract
The invention relates to the integrated circuit technology field and especially relates to a field plate metal preparation method suitable for a gallium nitride monolithic microwave integrated circuit (GaN MMIC). The method comprises the following steps: successively spinningly coating a PMGI photoresist layer and an AZ5214E reversal photoresist layer on a secondary medium Si3N4 layer of a GaN MMIC chip; though lithography, reversal baking and extensive exposure, completing a lithography process; forming a metal field plate layer pattern through two step development; using a metal evaporation bench to form a Ti/Au field plate metal layer through an evaporation method; then using acetone to peel the Ti/Au field plate metal layer on the photoresist. During a field plate making lithography process, the photoresist has a poor adhesive property with the Si3N4 medium. By using the method of the invention, the above problem can be solved. A HEMT field plate technology can be performed smoothly. A yield of a MIM capacitor can be increased. Good compatibility between an active device technology and a passive device technology can be realized. The yield and performance of the whole circuit can be substantially improved.
Description
Technical field
The present invention relates to technical field of integrated circuits, be specifically related to a kind of field plate metal preparation method who is applicable to the gallium nitride microwave monolithic integrated circuit.
Background technology
Gallium nitride microwave monolithic integrated circuit (Gallium Nitride Monolithic Microwave IntegratedCircuit, GaN MMIC) whole manufacturing process, need to be through tens processing steps, wherein the making of active device GaN HEMT relates to the ohmic contact source and leaks the evaporation of metal and alloy, the isolation of active area, the evaporation of grid metal, evaporation and the Si of field plate metal
3N
4The critical process step such as the passivation of medium, the passive RLC device needs Si in the metal line, MIM electric capacity of sputter, interconnection exit of TaN resistance
3N
4The deposit of medium and the making of electroplated bridge etc.Wherein, a lot of technique can be shared by active and passive device, for example secondary media Si
3N
4Deposit both can be used as the passivation layer of GaN HEMT, can be used as again the medium between upper bottom crown in MIM electric capacity.In GaN MMIC technique, when the wiring metal of active device HEMT (being simultaneously also the bottom crown metal of MIM electric capacity) and passivation dielectric layer (while is also the middle dielectric layer of MIM electric capacity) make complete after, need on active device HEMT, make Metal field plate, to improve the overall performance of device and circuit.Specifically, field plate metal can effectively be modulated the Electric Field Distribution between grid leak, makes electric field strength maximum zone expand to drain terminal, eliminates the electric field spike at grid edge, improves the puncture voltage of device; Field plate metal can also be improved the schottky junction characteristic, effectively eliminates the problem that grid reverse leakage current that passivation layer causes increases.Therefore, the field plate manufacturing technology is one of critical process in the MMIC flow process.
What in traditional field plate metal technique manufacturing process, use is the AZ5214E reversal photoresist, because the wiring metal thickness of electric capacity bottom crown is higher, the metallic area of Da Rong value electric capacity is larger, while causing doing the photoetching of field plate, the AZ5214E photoresist at capacitor plate place extremely easily sheet comes off, thereby while causing the evaporating field sheetmetal, the top crown of electric capacity the overlap joint of excess metal occurred and has caused upper bottom crown to be communicated with bottom crown metal exit PAD place, as shown in Figures 2 and 3, the clear glue unnecessary field plate metal layer between the electric capacity top crown metal that causes and bottom crown exit PAD that comes off that shows in figure, make electric capacity thoroughly lose function, seriously reduced the rate of finished products of circuit.
Summary of the invention
The present invention causes the problem of MIM electric capacity decrease in yield in order to solve existing field plate technique, a kind of field plate metal preparation method who is applicable to the gallium nitride microwave monolithic integrated circuit is provided.
In order to achieve the above object, the technical solution used in the present invention is:
A kind of field plate metal preparation method who is applicable to the gallium nitride microwave monolithic integrated circuit, comprise the steps:
Step 10, at the secondary media Si of gallium nitride microwave monolithic integrated circuit chip
3N
4On layer, spin coating PMGI photoresist layer, dried sheet by chip;
Step 20, continue spin coating AZ5214E reversal photoresist layer on the PMGI photoresist layer of spin coating in step 10, chip is dried to sheet, by photoetching, reversion baking sheet, general exposure, completes photoetching process;
Step 30, develop and form the Metal field plate layer pattern by two steps;
Step 40, the method formation Ti/Au field plate metal layer with the evaporation of metal platform by evaporation, peeled off the Ti/Au field plate metal layer on photoresist with acetone afterwards, obtains required field plate metal.
In such scheme, in described step 10, the thickness of PMGI photoresist layer is
In such scheme, dry sheet in described step 10 chip is placed in 180 ℃ of baking ovens and dries sheet 15 minutes.
In such scheme, drying sheet in described step 20 is that chip is placed in 100 ℃ of baking ovens and dries sheet 90 seconds.
In such scheme, it is that chip is placed in 115 ℃ of baking ovens and dries agreement that contracts a film or TV play to an actor or actress 90 seconds that sheet is dried in the reversion in described step 20.
In such scheme, in described step 20, the thickness of AZ5214E reversal photoresist layer is
In such scheme, described step 30 specifically comprises the steps: the described AZ5214E reversal photoresist that first with the AZ developer solution, removes required field plate layer pattern part, again chip is placed in 120 ℃ of baking ovens and dries agreement that contracts a film or TV play to an actor or actress 4 minutes, remove the PMGI photoresist of required field plate layer pattern part with the CD26 developer solution, thereby form the Metal field plate layer pattern.
In such scheme, the thickness of described Ti/Au field plate metal layer is
Compared with prior art, the beneficial effect that technical solution of the present invention produces is as follows:
Field plate metal preparation method of the present invention, solve well field plate and made the poor problem of photoresist and Si3N4 medium adhesion in photoetching process, guaranteed carrying out smoothly of HEMT field plate technique, greatly improved the yields of MIM electric capacity, realize the good compatibility of active device and passive device technique, can significantly improve rate of finished products and the performance of whole circuit.
The accompanying drawing explanation
Fig. 1 causes upper bottom crown to be communicated with inefficacy electric capacity microphoto for coming off due to photoresist;
The partial enlarged drawing that Fig. 2 is Fig. 1;
The process schematic diagram of the formation Metal field plate layer pattern that Fig. 3 provides for the embodiment of the present invention;
The field plate metal preparation method's that Fig. 4 provides for the embodiment of the present invention flow chart.
Embodiment
Below in conjunction with drawings and Examples, technical solution of the present invention is described in detail.
As shown in Figure 3, Figure 4, a kind of field plate metal preparation method who is applicable to the gallium nitride microwave monolithic integrated circuit, comprise the steps:
Step 10, at the secondary media Si of gallium nitride microwave monolithic integrated circuit chip
3N
4Spin coating PMGI photoresist on layer 101, form PMGI photoresist layer 102, and as shown in Fig. 3 (a), the thickness of PMGI photoresist layer 102 is
Then chip is placed in 180 ℃ of baking ovens and dries agreement that contracts a film or TV play to an actor or actress 15 minutes;
Step 20, continue spin coating AZ5214E reversal photoresist layer 103 on the PMGI photoresist layer 102 in step 10, as shown in Fig. 3 (b), the thickness of AZ5214E reversal photoresist layer 103 is
Then chip is placed in 100 ℃ of baking ovens and dries agreement that contracts a film or TV play to an actor or actress 90 seconds, complete photoetching process by photoetching, reversion baking sheet, general exposure, as shown in Fig. 3 (c); Wherein reversion baking sheet is that chip is placed in 115 ℃ of baking ovens and dries agreement that contracts a film or TV play to an actor or actress 90 seconds.
Step 30, develop and form the Metal field plate layer pattern by two steps, specifically comprise: the AZ5214E reversal photoresist that first with the AZ developer solution, removes required field plate layer pattern part, as shown in Fig. 3 (d), developing time is 1 minute, then chip is placed in 120 ℃ of baking ovens and dries agreement that contracts a film or TV play to an actor or actress 4 minutes, remove the PMGI photoresist of required field plate layer pattern part with the CD26 developer solution, as shown in Fig. 3 (e), the time is 15 seconds, thereby forms the Metal field plate layer pattern.
Step 40, use the evaporation of metal platform to form Ti/Au field plate metal layer by the method for evaporation, and evaporation formation thickness is about successively
Ti layer and thickness be about
The Au layer; With acetone, the Ti/Au field plate metal layer on photoresist is peeled off afterwards, obtain required field plate metal, the Ti layer and the Au layer metal that are about to evaporate on photoresist soak and carry out peeling off of metal in about 30 minutes with acetone, then clean up and get final product with acetone and ethanol successively, the required field plate metal that does not have the position of photoresist to form on chip.
Two-layer compound colloid architecture in gallium nitride microwave monolithic integrated circuit field plate preparation process of the present invention has greatly increased the adhesiveness between photoresist and medium, suppressed the glue obscission, thereby the making that not only can guarantee the active device field plate is carried out smoothly, also can greatly improve the yields of MIM electric capacity, make active device and passive device technique compatibility well, performance and the rate of finished products of improving whole circuit played to very large effect; PMGI bondline thickness as thin as a wafer, make its impact on litho pattern minimum; Reasonably Double-layer photoetching glue baking condition, can prevent that PMGI and AZ5214E reversal photoresist from dissolving each other; Twice development step, can guarantee uniformity and the integrality of litho pattern.In the present invention, the use of the field plate metal preparation method of whole GaN MMIC and supporting novel double-layer composite colloid architecture thereof can guarantee that whole preparation process accomplishs without any letup, method is simple, for solid foundation has been established in the realization of whole GaN MMIC circuit superperformance and high finished product rate.
The foregoing is only the preferred embodiments of the present invention, be not limited to the present invention, for a person skilled in the art, the present invention can have various modifications and variations.Within the spirit and principles in the present invention all, any modification of doing, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (7)
1. a field plate metal preparation method who is applicable to the gallium nitride microwave monolithic integrated circuit, is characterized in that, comprises the steps:
Step 10, at the secondary media Si of gallium nitride microwave monolithic integrated circuit chip
3N
4On layer, spin coating PMGI photoresist layer, dried sheet by chip;
Step 20, continue spin coating AZ5214E reversal photoresist layer on the PMGI photoresist layer of spin coating in step 10, chip is dried to sheet, by photoetching, reversion baking sheet, general exposure, completes photoetching process;
Step 30, develop and form the Metal field plate layer pattern by two steps, specifically comprises the steps:
First with the AZ developer solution, remove the AZ5214E reversal photoresist of required field plate layer pattern part, again chip is placed in 120 ℃ of baking ovens and dries sheet 4 minutes, remove the PMGI photoresist of required field plate layer pattern part with the CD26 developer solution, thereby form the Metal field plate layer pattern;
Step 40, the method formation Ti/Au field plate metal layer with the evaporation of metal platform by evaporation, peeled off the Ti/Au field plate metal layer on photoresist with acetone afterwards, obtains required field plate metal.
2. the field plate metal preparation method who is applicable to the gallium nitride microwave monolithic integrated circuit as claimed in claim 1, it is characterized in that: in described step 10, the thickness of PMGI photoresist layer is
3. the field plate metal preparation method who is applicable to the gallium nitride microwave monolithic integrated circuit as claimed in claim 1, is characterized in that: dry sheet in described step 10 chip is placed in 180 ℃ of baking ovens and dries sheet 15 minutes.
4. the field plate metal preparation method who is applicable to the gallium nitride microwave monolithic integrated circuit as claimed in claim 1 is characterized in that: drying sheet in described step 20 is that chip is placed in 100 ℃ of baking ovens and dries sheet 90 seconds.
5. the field plate metal preparation method who is applicable to the gallium nitride microwave monolithic integrated circuit as claimed in claim 1 is characterized in that: it is that chip is placed in 115 ℃ of baking ovens and dries sheet 90 seconds that sheet is dried in the reversion in described step 20.
6. the field plate metal preparation method who is applicable to the gallium nitride microwave monolithic integrated circuit as claimed in claim 1, it is characterized in that: in described step 20, the thickness of AZ5214E reversal photoresist layer is
7. the field plate metal preparation method who is applicable to the gallium nitride microwave monolithic integrated circuit as claimed in claim 1, it is characterized in that: in described step 40, the thickness of Ti/Au field plate metal layer is
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1466189A (en) * | 2002-07-05 | 2004-01-07 | 中国科学院微电子中心 | Method for making air bridge on substrate |
| CN101097860A (en) * | 2007-06-28 | 2008-01-02 | 西安电子科技大学 | Method for producing air bridge of compound semiconductor microwave high power device |
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| US20040021152A1 (en) * | 2002-08-05 | 2004-02-05 | Chanh Nguyen | Ga/A1GaN Heterostructure Field Effect Transistor with dielectric recessed gate |
| US8003525B2 (en) * | 2007-06-29 | 2011-08-23 | Fujitsu Limited | Semiconductor device and method of manufacturing the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1466189A (en) * | 2002-07-05 | 2004-01-07 | 中国科学院微电子中心 | Method for making air bridge on substrate |
| CN101097860A (en) * | 2007-06-28 | 2008-01-02 | 西安电子科技大学 | Method for producing air bridge of compound semiconductor microwave high power device |
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