CN102469641A - Integrated power tube's LED driving chip employing implantation to isolating substrates - Google Patents
Integrated power tube's LED driving chip employing implantation to isolating substrates Download PDFInfo
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- CN102469641A CN102469641A CN2010105393649A CN201010539364A CN102469641A CN 102469641 A CN102469641 A CN 102469641A CN 2010105393649 A CN2010105393649 A CN 2010105393649A CN 201010539364 A CN201010539364 A CN 201010539364A CN 102469641 A CN102469641 A CN 102469641A
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- isolated area
- driving chip
- power tube
- led driving
- circuit
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Abstract
The invention, which is applied to an LED illumination drive circuit, provides an LED driving chip of an integrated power tube, wherein the LED driving chip employs implantation to isolate substrates. According to a technical scheme provided in the invention, ion implantation is employed to enable substrates of a control circuit and an output power tube to be isolated.
Description
Technical field
The present invention is used for the LED illumination driving circuit, has proposed a kind of employing ion and has injected, the solution that the substrate of control circuit and power output pipe is partly kept apart.
Background technology
Along with the requirement of miniaturization of LED illumination driving circuit and high integration, begin to have trend that the power output pipe is integrated into the chip internal district.In common circuit framework, on the emitter-base bandgap grading of efferent duct, be connected in series reference resistance, be used for flow measurement (output current is converted into voltage to earth) and feed back to control section.
Yet, being produced on the power tube on the high-pressure process, its emitter-base bandgap grading is direct ground connection (linking to each other with well) often.The function and the accuracy of this serious harm flow measurement resistance.
Summary of the invention
The present invention adopts ion to inject, and the substrate of control circuit and power output pipe is partly kept apart.
Its basic principle is: between control circuit and efferent duct, set up an isolated area; Carry out injecting in this isolated area, and make the depth of its formation significantly be deeper than the latter with former lining well polarity counter ion; And with denseer this well of injection contact, and when work, give reverse bias.Between two lining wells, just realized isolation basically like this, the only remaining electric leakage that is deeper than the original silicon chip of barrier wells part, and this resistance is bigger usually.Through selecting suitable isolated area width, be not difficult to reach purpose much larger than the flow measurement resistance value.
Description of drawings
Fig. 1 is a drive circuit structure, wherein:
A is that backward diode B is a luminous tube array
C is that power output pipe D is a flow measurement resistance
E is a control circuit
Fig. 2 is a domain configuration diagram of the present invention, wherein:
X is the control circuit zone
Y is a power output pipe circuit diagram
Z is an isolated area
Fig. 3 is corresponding silicon chip interior profile figure
Embodiment
The present invention's circuit is in basic the realization, and the barrier wells of required formation can be multiplexing with the injection of satisfying the degree of depth and concentration requirement in the complicated technology.
Be the chip area that avoids waste, can place pad or electric capacity in isolated area.
Claims (4)
1. the design of a LED illumination driving circuit adopts ion to inject, and the substrate of control circuit and power output pipe is partly kept apart.
2. a circuit design that meets patent requirement 1 is characterized in that its basic principle is: between control circuit and efferent duct, set up an isolated area; Carry out injecting in this isolated area, and make the depth of its formation significantly be deeper than the latter with former lining well counter ion; And with denseer this well of injection contact, and when work, give reverse bias; Between such two lining wells, just realized isolation basically, the only remaining electric leakage that is deeper than the original silicon chip of barrier wells part, and this resistance is bigger usually.
3. a circuit design that meets patent requirement 1 is characterized in that, in basic the realization, the barrier wells of required formation can be multiplexing with the injection of satisfying the degree of depth and concentration requirement in the complicated technology.
4. a circuit design that meets patent requirement 1 is characterized in that, in application, is the chip area that avoids waste, and can place pad or electric capacity in isolated area.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010105393649A CN102469641A (en) | 2010-11-10 | 2010-11-10 | Integrated power tube's LED driving chip employing implantation to isolating substrates |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010105393649A CN102469641A (en) | 2010-11-10 | 2010-11-10 | Integrated power tube's LED driving chip employing implantation to isolating substrates |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102469641A true CN102469641A (en) | 2012-05-23 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010105393649A Pending CN102469641A (en) | 2010-11-10 | 2010-11-10 | Integrated power tube's LED driving chip employing implantation to isolating substrates |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102469641A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1886839A (en) * | 2004-02-24 | 2006-12-27 | 崇贸科技股份有限公司 | High voltage and low on-resistance LDMOS transistor having equalized capacitance |
| CN2881961Y (en) * | 2005-04-29 | 2007-03-21 | 崇贸科技股份有限公司 | MOS field effect transistor with isolation structure for monlithic integration |
-
2010
- 2010-11-10 CN CN2010105393649A patent/CN102469641A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1886839A (en) * | 2004-02-24 | 2006-12-27 | 崇贸科技股份有限公司 | High voltage and low on-resistance LDMOS transistor having equalized capacitance |
| CN2881961Y (en) * | 2005-04-29 | 2007-03-21 | 崇贸科技股份有限公司 | MOS field effect transistor with isolation structure for monlithic integration |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| DD01 | Delivery of document by public notice |
Addressee: Shenzhen Haobo Photoelectric Co.,Ltd. Document name: the First Notification of an Office Action |
|
| DD01 | Delivery of document by public notice |
Addressee: Shenzhen Haobo Photoelectric Co.,Ltd. Document name: Notification that Application Deemed to be Withdrawn |
|
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20120523 |