CN102468430B - Implementation method for improving adhesiveness of phase change material - Google Patents
Implementation method for improving adhesiveness of phase change material Download PDFInfo
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- CN102468430B CN102468430B CN201010534179.0A CN201010534179A CN102468430B CN 102468430 B CN102468430 B CN 102468430B CN 201010534179 A CN201010534179 A CN 201010534179A CN 102468430 B CN102468430 B CN 102468430B
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Abstract
The invention provides an implementation method for improving the adhesiveness of a phase change material. The implementation method comprises the following steps of: providing a semiconductor substrate, wherein a first insulating layer and a second insulating layer are formed on the semiconductor substrate in turn, and a lower electrode is formed in the first insulating layer; etching a Ge-Sb-Te (GST) phase change material filling hole in the second insulating layer to completely expose the upper surface of the lower electrode; generating an adhesion layer on the surface of the device structure and the upper surface of the lower electrode; filling a GST phase change material in the GST phase change material filling hole; and removing the adhesion layer and the GST phase change material above the second insulating layer through chemical and mechanical flattening. The adhesion layer is formed on the surface of the device structure before the GST phase change material is filled, so the adhesiveness of the GST phase change material is improved, the problem that the GST phase change material is peeled off during GST physical vapor deposition and the chemical and mechanical flattening is solved, the process operation is simple and convenient, the cost is reduced, and the comprehensive performance of a device is improved.
Description
Technical field
The present invention relates to semiconductor memory technologies field, particularly relate to the adhering implementation method of a kind of raising phase-change material.
Background technology
Phase-change random access memory (phase change random access memory, PCRAM) be a kind of memory utilizing phase change film material to store to realize data as storage medium, be acknowledged as the most promising memory successfully breaking through 22nm size node.
The chalcogenide compound Ge be made up of germanium (Ge)-antimony (Sb)-tellurium (Te)
2sb
2te
5(GST), the reversible transition between crystalline state and amorphous state can be realized rapidly, become phase-change material the most frequently used on current PCRAM.GST is low resistance state in crystalline state, is high-resistance state in amorphous state, and resistance difference when phase transition storage utilizes GST to change between crystalline and amorphous is just to realize, and data store.
Fig. 1 is the cross-sectional view of current phase change memory device.As figure, first insulating barrier 101 is enclosed in the side of bottom electrode 102, second insulating barrier 103 is formed at the first insulating barrier 101 and bottom electrode 102 upper surface, GST phase-change material 104 to be filled in the perforate of the second insulating barrier 103 and to aim at bottom electrode 102 center, 3rd insulating barrier 105 is formed at the second insulating barrier 103 upper surface, top electrode 106 is formed in the perforate of the 3rd insulating barrier 105, and aims at GST phase-change material 104 center in the perforate of the second insulating barrier 103.
Realizing in the technique that GST phase-change material 104 is filled in the second insulating barrier 103 perforate, usually the method for physical vapour deposition (PVD) (PVD) is first adopted, GST phase-change material layers is deposited in the perforate of the second insulating barrier 103 upper surface and the second insulating barrier 103, then chemical-mechanical planarization (CMP) process is carried out to deposited GST phase-change material layers, GST phase-change material 104 is filled in the second insulating barrier 103 perforate completely.But due to the non-constant of the adhesiveness between GST phase-change material and insulating barrier, when the GST phase-change material layers of physical vapour deposition (PVD) (PVD) is thicker, GST phase-change material is easy to peel off from the second insulating barrier 103, process costs increases, when carrying out chemical-mechanical planarization (CMP) to GST phase-change material layers, the adhesiveness of GST phase-change material extreme difference makes processing performance reduce, polishing tangential stress easily pulls out GST phase-change material from the second insulating barrier 103 perforate, at present by adopting low polish pressure to avoid GST to peel off to GST polishing, but the method can roll up GST polishing time, the lack of homogeneity of GST phase-change material polishing, process window is very limited, subsequent technique complexity increases, obtained device synthesis performance reduces, so the adhesiveness improving phase-change material has just become current problem in the urgent need to address.
Summary of the invention
The object of the present invention is to provide and a kind of improve the adhering implementation method of phase-change material, cause due to the non-constant of the adhesiveness between GST and insulating barrier GST to hold flaky problem when physical vapour deposition (PVD) (PVD) and chemical-mechanical planarization (CMP) to solve in current preparation process.
For solving the problem, the present invention proposes the adhering implementation method of a kind of raising phase-change material, and the method comprises the steps:
Semiconductor substrate is provided, described Semiconductor substrate is formed with successively the first insulating barrier and the second insulating barrier, in described first insulating barrier, be formed with bottom electrode;
In described second insulating barrier, etch GST phase-change material filler opening, expose bottom electrode upper surface completely;
At the above-mentioned device architecture Surface Creation adhesion layer except bottom electrode upper surface;
GST phase-change material is filled in GST phase-change material filler opening;
Chemical-mechanical planarization removes adhesion layer above the second insulating barrier and GST phase-change material.
Optionally, described bottom electrode lower surface is close to Semiconductor substrate upper surface, and described bottom electrode upper surface is close to the second insulating barrier lower surface.
Optionally, using plasma processing method generates adhesion layer, and thickness is 20 dust ~ 300 dusts.
Optionally, contain silica in described first insulating barrier and the second insulating layer material, the gas that described method of plasma processing adopts is nitrogen or ammonia, and described adhesion layer is silicon oxynitride layer.
Optionally, described GST phase-change material layers fill method is physical vaporous deposition.
Compared with prior art, the present invention first before GST phase-change material is filled at device architecture Surface Creation adhesion layer, improve the adhesiveness of GST phase-change material, avoid the spallation problems of the GST phase-change material when carrying out GST physical vapour deposition (PVD) and GST chemical-mechanical planarization, and technological operation is simple and convenient, reduce process costs, improve the combination property of device.
Accompanying drawing explanation
Fig. 1 is the cross-sectional view of phase change memory device;
Fig. 2 is the process chart of the embodiment of the present invention;
Fig. 3 A to Fig. 3 E is the cross-sectional view of the embodiment of the present invention.
Embodiment
Be described in further detail the adhering implementation method of raising phase-change material that the present invention proposes below in conjunction with the drawings and specific embodiments, advantages and features of the invention will be clearer.It should be noted that, accompanying drawing all adopts the form simplified very much, only for object that is convenient, the aid illustration embodiment of the present invention lucidly.
As shown in Figure 2, the present invention proposes the adhering implementation method of a kind of raising phase-change material, and the method comprises the steps:
S201, provides Semiconductor substrate, described Semiconductor substrate is formed with successively the first insulating barrier and the second insulating barrier, is formed with bottom electrode in described first insulating barrier;
S202, etches GST phase-change material filler opening, exposes bottom electrode upper surface completely in described second insulating barrier;
S203, at the above-mentioned device architecture Surface Creation adhesion layer except bottom electrode upper surface;
S204, fills GST phase-change material in GST phase-change material filler opening;
S205, chemical-mechanical planarization removes adhesion layer and the GST phase-change material of the second insulating barrier upper surface.
Below in conjunction with Fig. 3 A ~ 3E, the adhering implementation method of above-mentioned raising phase-change material is explained in detail.
S201, provides Semiconductor substrate, described Semiconductor substrate is formed with successively the first insulating barrier and the second insulating barrier, is formed with bottom electrode in described first insulating barrier.
With reference to figure 3A, Semiconductor substrate 300 is provided, Semiconductor substrate 300 is formed the first insulating barrier 301, first insulating barrier 301 is formed the second insulating barrier 303, in the first insulating barrier 301, be formed with bottom electrode 302, bottom electrode 302 upper and lower surface is close to the second insulating barrier 303 and Semiconductor substrate 300 respectively.In the present embodiment the first insulating barrier 301 and the second insulating barrier 303 material in containing silica.
S202, etches GST phase-change material filler opening, exposes bottom electrode upper surface completely in described second insulating barrier.
With reference to figure 3B, described second insulating barrier 303 etches GST phase-change material filler opening 304, and the bottom width of GST phase-change material filler opening 304 is not less than the upper surface width of bottom electrode 302, to expose the upper surface of bottom electrode 302 completely.In the present embodiment, the bottom width of phase-change material filler opening 304 is greater than the upper surface width of bottom electrode 302, thus also exposes a part of first insulating barrier 301.
S203, at the above-mentioned device architecture Surface Creation adhesion layer except bottom electrode upper surface, namely generates adhesion layer in the part of device architecture surface except bottom electrode upper surface shown in Fig. 3 B.
With reference to figure 3C, in the present embodiment, adopt N
2or NH
3gas carries out plasma treatment to the second insulating barrier 303 and GST phase-change material filler opening 304 surface.N in this process
2or NH
3gas reacts with the silica being exposed to the first outer insulating barrier 301 (being arranged in bottom GST phase-change material filler opening 304) and the second insulating barrier 303 (comprising the sidewall of the second insulating barrier upper surface and GST phase-change material filler opening 304), generate silicon oxynitride layer 305 as adhesion layer, and the electrode materials such as polysilicon in bottom electrode 302 not with N
2or NH
3gas reacts, and this makes bottom electrode 302 upper surface not generate silicon oxynitride layer.Wherein, in the present embodiment, silicon oxynitride layer 305 thickness is 20 dust ~ 300 dusts.
S204, fills GST phase-change material in GST phase-change material filler opening;
With reference to figure 3D, in the present embodiment, adopt physical vaporous deposition (PVD) on silicon oxynitride layer 305, deposit one deck GST phase-change material layers 306.Due to the existence of silicon oxynitride layer 305, when the deposit thickness of GST phase-change material layers 306 is 4000 dust, corresponding adhesiveness can improve about 35%.
S205, chemical-mechanical planarization removes adhesion layer and the GST phase-change material of the second insulating barrier upper surface.
With reference to figure 3E, adopt chemical-mechanical planarization (CMP) technique to remove silicon oxynitride layer 305 and the GST phase-change material layers 306 of the second insulating barrier 303 upper surface in the present embodiment, provide uniformity and the good phase-change material polishing effect of process window for top electrode makes.
In sum, the present invention first generated adhesion layer on device architecture surface before GST phase-change material is filled, substantially increase adhesiveness when physical vapour deposition (PVD) and chemical-mechanical planarization GST phase-change material layers, avoid the spallation problems of GST phase-change material layers in technical process, without the need to extra mask exposure technique, simple to operate, reduce process costs, improve device performance.
Obviously, those skilled in the art can carry out various change and modification to invention and not depart from the spirit and scope of the present invention.Like this, if these amendments of the present invention and modification belong within the scope of the claims in the present invention and equivalent technologies thereof, then the present invention is also intended to comprise these change and modification.
Claims (4)
1. improve the adhering implementation method of phase-change material, it is characterized in that, comprising:
Semiconductor substrate is provided, described Semiconductor substrate is formed with successively the first insulating barrier and the second insulating barrier, in described first insulating barrier, be formed with bottom electrode;
In described second insulating barrier, etch GST phase-change material filler opening, expose bottom electrode upper surface completely;
At the above-mentioned device architecture Surface Creation adhesion layer except bottom electrode upper surface;
GST phase-change material is filled in GST phase-change material filler opening;
Chemical-mechanical planarization removes adhesion layer above the second insulating barrier and GST phase-change material;
Wherein, using plasma processing method generates described adhesion layer, and contain silica in described first insulating barrier and the second insulating layer material, the gas that described method of plasma processing adopts is nitrogen or ammonia, and described adhesion layer is silicon oxynitride layer.
2. improve the adhering implementation method of phase-change material according to claim 1, it is characterized in that: described bottom electrode lower surface is close to Semiconductor substrate upper surface, described bottom electrode upper surface is close to the second insulating barrier lower surface.
3. improve the adhering implementation method of phase-change material according to claim 1, it is characterized in that: the thickness of described adhesion layer is 20 dust ~ 300 dusts.
4. improve the adhering implementation method of phase-change material according to claim 1, it is characterized in that: described GST phase-change material layers fill method is physical vaporous deposition.
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5821168A (en) * | 1997-07-16 | 1998-10-13 | Motorola, Inc. | Process for forming a semiconductor device |
| CN101728481A (en) * | 2008-10-24 | 2010-06-09 | 中芯国际集成电路制造(上海)有限公司 | Method for manufacturing phase-change semiconductor device and phase-change semiconductor device |
-
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5821168A (en) * | 1997-07-16 | 1998-10-13 | Motorola, Inc. | Process for forming a semiconductor device |
| CN101728481A (en) * | 2008-10-24 | 2010-06-09 | 中芯国际集成电路制造(上海)有限公司 | Method for manufacturing phase-change semiconductor device and phase-change semiconductor device |
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