CN102468422A - Piezoelectric ceramic multilayer structure with self free bending vibration and preparation method thereof - Google Patents
Piezoelectric ceramic multilayer structure with self free bending vibration and preparation method thereof Download PDFInfo
- Publication number
- CN102468422A CN102468422A CN2010105391728A CN201010539172A CN102468422A CN 102468422 A CN102468422 A CN 102468422A CN 2010105391728 A CN2010105391728 A CN 2010105391728A CN 201010539172 A CN201010539172 A CN 201010539172A CN 102468422 A CN102468422 A CN 102468422A
- Authority
- CN
- China
- Prior art keywords
- piezoelectric ceramic
- layer low
- temperature melt
- melt piezoelectric
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The invention relates to a piezoelectric ceramic multilayer structure with self free bending vibration and a preparation method thereof. The piezoelectric ceramic multilayer structure with self free bending vibration comprises a substrate, an integral lower N-layer low-temperature sintering piezoelectric ceramic which is adhered to the substrate, an integral upper N-layer low-temperature sintering piezoelectric ceramic, and external electrodes connected with the upper N-layer low-temperature sintering piezoelectric ceramic and the lower N-layer low-temperature sintering piezoelectric ceramic, wherein the integral upper N-layer low-temperature sintering piezoelectric ceramic and the integral lower N-layer low-temperature sintering piezoelectric ceramic are sintered through a low temperature co-fired ceramic (LTCC) multilayer co-sintering process, are parallelly connected with each other, and are polarized by a homonymous electric field; every layer of ceramic in the upper N-layer low-temperature sintering piezoelectric ceramic and the lower N-layer low-temperature sintering piezoelectric ceramic is parallelly connected, and surface electrodes are paved on the surfaces of the ceramics; and N is a natural number greater than 2. The invention also provides a method for preparing the piezoelectric ceramic multilayer structure with self free bending vibration.
Description
Technical field
The present invention relates to the design of integrated circuit and the coupling of dynamo-electric conversion of piezoelectric ceramic and vibration mode and combine, design a kind of brand-new interior electrode connecting structure and the mode of vibration that structure excited thus.Specifically, the invention provides a kind of piezoceramic multilayer structure and preparation method thereof of self free bend vibration.
Background technology
The fundamental vibration principle of piezoelectric ceramic of the prior art is as shown in Figure 1: when polarised direction P was opposite with direction of an electric field E, pottery was compressed along 3 directions, and along the elongation of 1 direction; Otherwise when polarised direction P was identical with direction of an electric field E, pottery was extended along 3 directions, and along the compression of 1 direction; If the electric field that changes, then the variation of the machinery of pottery also changes with the variation of electric field.Utilize this characteristic of piezoelectric ceramic, those skilled in the art have designed various vibrations, sensing and driving element.In the design of vibration, senser element, need with the stretching vibration mode-conversion of 1 direction beam mode usually.Traditional technical scheme is that free piezoelectric vibrator 21 and substrate 22 (being generally sheet metal such as copper, dilval or PET film etc.) are bondd with epoxy glue; Then in pressing solidly of frock interior heat, so that piezoelectric patches and substrate combine firmly, like this; Free piezoelectric vibrator just becomes the composite oscillator of being tied up; Through the constraint of substrate, the stretching vibration of free oscillator 1 direction is converted into the flexural vibrations of 3 directions, as shown in Figure 2.
This scheme has several obvious defects: the one, and hot-press solidifying, pottery is different with the thermal coefficient of expansion of substrate, causes the composite oscillator distortion, and frequency drift is big, and properties of product are difficult to accomplish normal distribution; The 2nd, the internal stress of being tied up the back composite oscillator is big, between its piezoelectric property decline of piezoelectric vibrator 10-20%; The 3rd, high to the selection and the gluing and solidifying technological requirement of glue, it all is because bonding glue ageing failure causes that general oscillator lost efficacy.
Also have in the prior art when making the piezoelectric sensing device, two opposite free oscillators of piezoelectricity of polarised direction are directly pasted curing, get upper/lower electrode then and connect external electric field; As shown in Figure 3, it is identical so also to have set up an extra electric field direction, and the opposite free bend vibration mode of polarised direction; But its defective is: can only two compound; And be resonance series, with respect to the parallel resonance of equal conditions, its amplitude has only 1/4.
Up to now, this area is still untapped goes out a kind of brand-new interior electrode connecting structure of the defective that can overcome above-mentioned prior art and the mode of vibration that structure excited thus.
Therefore, this area presses for the brand-new interior electrode connecting structure of developing a kind of defective that can overcome above-mentioned prior art and the mode of vibration that structure excited thus.
Summary of the invention
The invention provides a kind of piezoceramic multilayer structure and preparation method thereof of self free bend vibration of novelty, thereby solved the problem that exists in the prior art.
On the one hand, the invention provides a kind of piezoceramic multilayer structure of self free bend vibration, this structure comprises:
Substrate;
With bonding the making as a whole following N layer low-temperature melt piezoelectric ceramic and make as a whole last N layer low-temperature melt piezoelectric ceramic of substrate; Wherein, Saidly make as a whole last N layer low-temperature melt piezoelectric ceramic and make as a whole following N layer low-temperature melt piezoelectric ceramic and carry out sintering and be connected in parallel through LTCC multilayer co-firing knot technology, and warp electric field polarization in the same way; Said each layer pottery of going up in N layer low-temperature melt piezoelectric ceramic and the following N layer low-temperature melt piezoelectric ceramic is connected in parallel, and is equipped with the face electrode in its surface; N is the natural number greater than 2;
Go up the external electrode that N layer low-temperature melt piezoelectric ceramic is connected with following N layer low-temperature melt piezoelectric ceramic with said.
On the other hand, the invention provides a kind of method for preparing the piezoceramic multilayer structure of self free bend vibration, this method comprises:
Making as a whole following N layer low-temperature melt piezoelectric ceramic and making as a whole last N layer low-temperature melt piezoelectric ceramic of being connected in parallel is provided; Adopt LTCC multilayer co-firing knot technology to make as a whole last N layer low-temperature melt piezoelectric ceramic and make as a whole following N layer low-temperature melt piezoelectric ceramic to carry out sintering to said; And carry out electric field polarization in the same way; Wherein, Said each layer pottery of going up in N layer low-temperature melt piezoelectric ceramic and the following N layer low-temperature melt piezoelectric ceramic is connected in parallel, and is equipped with the face electrode in its surface; N is the natural number greater than 2;
Said upward N layer low-temperature melt piezoelectric ceramic is bonding with following N layer low-temperature melt piezoelectric ceramic and substrate;
The said N layer low-temperature melt piezoelectric ceramic of going up is connected with external electrode with following N layer low-temperature melt piezoelectric ceramic.
One preferred embodiment in, to go up N layer low-temperature melt piezoelectric ceramic bonding with following N layer low-temperature melt piezoelectric ceramic and substrate with said to use soft glue.
Description of drawings
Fig. 1 is the sketch map of the fundamental vibration principle of piezoelectric ceramic in the prior art.
Fig. 2 is the sketch map according to the flexural vibrations of the piezoelectric ceramic of a technical scheme of prior art.
Fig. 3 is the sketch map according to the flexural vibrations of the piezoelectric ceramic of another technical scheme of prior art.
Fig. 4 is the sketch map of the piezoceramic multilayer structure of self free bend vibration of the present invention.
Fig. 5 be according to an embodiment of the invention a kind of last three layers with following three layers of sketch map of the parallelly connected free bend structure of totally six lamination electroceramics.
Embodiment
Inventor of the present invention finds after having passed through extensive and deep research; Use low-temperature melt piezoelectric ceramic to be main material; Through LTCC (multilayer sheet type electric capacity, inductance) multilayer co-firing knot technology; Lay built-in electrode and adopt special polarization mode, set up the technology of any 2N layer pottery and 2N+1 layer electrode co-sintering, feasible isolated piezoelectric ceramic resonance piece flexural vibrations freely.Based on above-mentioned discovery, the present invention is accomplished.
In first aspect of the present invention, a kind of piezoceramic multilayer structure of self free bend vibration is provided, this structure comprises:
Substrate;
The up and down N layer pottery bonding with substrate; Last N layer pottery (as one on the whole) and following N layer pottery (as on the whole) are adopted electric field polarization in the same way; Connect through external electrode then, and guide to input signal electrode on the electrode surface, like this with regard to having set up one polarised direction being identical and the free bend vibration mode that direction of an electric field is opposite; When last N layer pottery shrinks, the elongation of following N layer pottery; Otherwise when the elongation of last N layer pottery, following N layer pottery shrinks, and wherein, said N layer pottery up and down carries out sintering and be connected in parallel through LTCC multilayer co-firing knot technology; Each layer pottery in the said N layer pottery up and down is connected in parallel, and is equipped with the face electrode in its surface; N is the natural number greater than 2;
The external electrode that is connected with the said pottery of N layer up and down.
In second aspect of the present invention, a kind of method for preparing the piezoceramic multilayer structure of self free bend vibration is provided, this method comprises:
Provide doing respectively of being connected in parallel the as a whole layer of N up and down pottery; Adopt LTCC multilayer co-firing knot technology that said N layer pottery up and down carried out sintering, and carry out electric field polarization in the same way;
The said pottery of N layer up and down is bonding with substrate;
The said pottery of N layer up and down is connected with external electrode.
In the present invention, use soft glue that the said pottery of N layer up and down is bonding with substrate.
Below referring to accompanying drawing.
Fig. 4 is the sketch map of the piezoceramic multilayer structure of self free bend vibration of the present invention.As shown in Figure 4; With bonding the making as a whole following N layer low-temperature melt piezoelectric ceramic 41 and make as a whole last N layer low-temperature melt piezoelectric ceramic 42 and carry out sintering and be connected in parallel of supporting substrate through LTCC multilayer co-firing knot technology; And through electric field polarization in the same way; Wherein, said each layer pottery of going up in N layer low-temperature melt piezoelectric ceramic and the following N layer low-temperature melt piezoelectric ceramic is connected in parallel, and is equipped with the face electrode in its surface; The said N layer low-temperature melt piezoelectric ceramic of going up is connected external electrode with following N layer low-temperature melt piezoelectric ceramic; External signal electric field E is input to signal on the electrode surface; Thereby set up one polarised direction has been identical and free bend vibration mode that direction of an electric field is opposite; When last N layer pottery shrinks, the elongation of following N layer pottery; Otherwise when last N layer pottery extended, following N layer pottery shrank.
Fig. 5 be according to an embodiment of the invention a kind of last three layers with following three layers of sketch map of the parallelly connected free bend structure of totally six lamination electroceramics.As shown in Figure 5; The as a whole six layers of low-temperature melt piezoelectric ceramic 50 up and down of doing to being connected in parallel adopt LTCC multilayer co-firing knot technology to carry out sintering; And go up N layer pottery electric field polarization (for the first time polarization) in the same way; Descend N layer pottery electric field polarization (polarization for the second time) in the same way again, carry out final electrode at last and connect 1 (the superiors' face electrode carries out two electrode short circuits), perhaps carry out final electrode and connect 2 (orlop face electrode carries out columnar electrode and lower electrodes short circuit); Wherein, piezoelectric ceramic is connected with external electrode with the input external signal.
Major advantage of the present invention is:
1. make as a whole last N layer pottery and make as a whole following N layer pottery for being connected in parallel, and each layer in each N layer pottery also is connected in parallel, this just makes 2N layer pottery all be in parallel resonance; Its capacity is big; Amplitude is big, bandwidth, and impedance is low.
2. because pottery is through sintering rather than through the constraint of glue bonding, make the reliability of oscillator and consistency improve greatly.
3. N layer pottery all is active drive up and down, do not have passive part, makes the vibration impedance be the decline significantly of how much orders of magnitude.
4.N be natural number, can freely design greater than 2.
5. the performance of oscillator itself is exactly device performance basically, no longer includes strict requirement for substrate that supports and glue, as long as be pasted on the flexible substrate film with soft glue.
All documents in that the present invention mentions are all quoted as a reference in this application, are just quoted such as a reference separately as each piece document.Should be understood that in addition after having read above-mentioned teachings of the present invention, those skilled in the art can do various changes or modification to the present invention, these equivalent form of values fall within the application's appended claims institute restricted portion equally.
Claims (3)
1. the piezoceramic multilayer structure of self free bend vibration, this structure comprises:
Substrate;
With bonding the making as a whole following N layer low-temperature melt piezoelectric ceramic and make as a whole last N layer low-temperature melt piezoelectric ceramic of substrate; Wherein, Saidly make as a whole last N layer low-temperature melt piezoelectric ceramic and make as a whole following N layer low-temperature melt piezoelectric ceramic and carry out sintering and be connected in parallel through LTCC multilayer co-firing knot technology, and warp electric field polarization in the same way; Said each layer pottery of going up in N layer low-temperature melt piezoelectric ceramic and the following N layer low-temperature melt piezoelectric ceramic is connected in parallel, and is equipped with the face electrode in its surface; N is the natural number greater than 2;
Go up the external electrode that N layer low-temperature melt piezoelectric ceramic is connected with following N layer low-temperature melt piezoelectric ceramic with said.
2. method for preparing the piezoceramic multilayer structure of self free bend vibration, this method comprises:
Making as a whole following N layer low-temperature melt piezoelectric ceramic and making as a whole last N layer low-temperature melt piezoelectric ceramic of being connected in parallel is provided; Adopt LTCC multilayer co-firing knot technology to make as a whole last N layer low-temperature melt piezoelectric ceramic and make as a whole following N layer low-temperature melt piezoelectric ceramic to carry out sintering to said; And carry out electric field polarization in the same way; Wherein, Said each layer pottery of going up in N layer low-temperature melt piezoelectric ceramic and the following N layer low-temperature melt piezoelectric ceramic is connected in parallel, and is equipped with the face electrode in its surface; N is the natural number greater than 2;
Said upward N layer low-temperature melt piezoelectric ceramic is bonding with following N layer low-temperature melt piezoelectric ceramic and substrate;
The said N layer low-temperature melt piezoelectric ceramic of going up is connected with external electrode with following N layer low-temperature melt piezoelectric ceramic.
3. method as claimed in claim 2 is characterized in that, uses soft glue that said upward N layer low-temperature melt piezoelectric ceramic is bonding with following N layer low-temperature melt piezoelectric ceramic and substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010105391728A CN102468422A (en) | 2010-11-11 | 2010-11-11 | Piezoelectric ceramic multilayer structure with self free bending vibration and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010105391728A CN102468422A (en) | 2010-11-11 | 2010-11-11 | Piezoelectric ceramic multilayer structure with self free bending vibration and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102468422A true CN102468422A (en) | 2012-05-23 |
Family
ID=46071782
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010105391728A Pending CN102468422A (en) | 2010-11-11 | 2010-11-11 | Piezoelectric ceramic multilayer structure with self free bending vibration and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102468422A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1823429A (en) * | 2003-09-04 | 2006-08-23 | 日本电气株式会社 | Piezoelectric ceramic element and portable device |
-
2010
- 2010-11-11 CN CN2010105391728A patent/CN102468422A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1823429A (en) * | 2003-09-04 | 2006-08-23 | 日本电气株式会社 | Piezoelectric ceramic element and portable device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| WO2020244332A1 (en) | Bulk acoustic resonator with variable doping concentration, filter, and electronic device | |
| CN1068546C (en) | Semiconductor device | |
| US5334903A (en) | Composite piezoelectrics utilizing a negative Poisson ratio polymer | |
| KR101727252B1 (en) | Piezoelectric Energy Harvesting Apparatus | |
| US8461745B2 (en) | Piezoceramic surface actuator and method for the production thereof | |
| CN105047811B (en) | Piezoelectric material layer based on different-thickness stacks PZT (piezoelectric transducer) | |
| KR20030007429A (en) | Composite Piezoelectric Transformer | |
| WO2006093078A1 (en) | Surface acoustic wave device | |
| Xu et al. | Fabrication and characterization of MEMS-based PZT/PZT bimorph thick film vibration energy harvesters | |
| CN102983781B (en) | Piezoelectric vibratory energy harvester | |
| US6614144B2 (en) | Multilayer piezoelectric transformer | |
| CN206178120U (en) | Reduce magnetism electric sensor sensing element of vibration noise | |
| Quintero et al. | Design optimization of vibration energy harvesters fabricated by lamination of thinned bulk-PZT on polymeric substrates | |
| CN107565013B (en) | Longitudinal gradient short fiber piezoelectric composite material and preparation method thereof | |
| Sobocinski et al. | Monomorph piezoelectric wideband energy harvester integrated into LTCC | |
| Xu et al. | Multistage force amplification of piezoelectric stacks | |
| CN107527992B (en) | Bidirectional gradient short fiber piezoelectric composite material and preparation method thereof | |
| CN102468422A (en) | Piezoelectric ceramic multilayer structure with self free bending vibration and preparation method thereof | |
| WO2010143675A1 (en) | Piezoelectric power generation device and method for manufacturing same | |
| CN115966886A (en) | Very-low-frequency multilayer magnetoelectric mechanical antenna and preparation method thereof | |
| CN110391330A (en) | Compound magnetoelectric transducing unit based on magnetostrictive force coupling | |
| CN107516710B (en) | Transverse gradient short fiber piezoelectric composite material and preparation method thereof | |
| CN103125029B (en) | Piezoelectric multi-layer component | |
| CN107196554A (en) | A kind of fractal structure vibration transducer and its manufacture method based on piezoelectric ceramics | |
| CN107482113B (en) | Short fiber piezoelectric composite material and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C12 | Rejection of a patent application after its publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20120523 |