CN102465338A - Method for crystallizing noncrystalline silicon by induction heating - Google Patents
Method for crystallizing noncrystalline silicon by induction heating Download PDFInfo
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- CN102465338A CN102465338A CN2010105477146A CN201010547714A CN102465338A CN 102465338 A CN102465338 A CN 102465338A CN 2010105477146 A CN2010105477146 A CN 2010105477146A CN 201010547714 A CN201010547714 A CN 201010547714A CN 102465338 A CN102465338 A CN 102465338A
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Abstract
The invention relates to a method for crystallizing noncrystalline silicon by induction heating, wherein a strong alternating magnetic field is generated by using an induction coil, the alternating magnetic field approaches a noncrystalline silicon thin film covered with a metal film, the metal film can generate strong induction vortex current which is capable of rapidly heating the metal film so as to heat the noncrystalline silicon under the metal film, the conductivity of the heated noncrystalline silicon is enhanced, a vortex current can be also generated in the alternating magnetic field to further heat the alternating magnetic field per se, and therefore the noncrystalline silicon thin film is rapidly heated to reach the crystallization temperature, and the purpose of crystallization is achieved; and the method disclosed by the invention has the advantages of simple required equipment and low cost and is beneficial to popularization and application of polysilicon thin film transistors.
Description
Technical field
The present invention relates to a kind of electron display device, particularly a kind of induction heating non-crystalline silicon crystallization method.
Background technology
Thin film transistor has a wide range of applications in display device; The transistorized mainstream technology of current thin film is the amorphous silicon membrane transistor technology; Mobility is low, the problem of poor stability but amorphous silicon film transistor has; Can not be useful in the field of some high requests, like organic light-emitting display device, polycrystalline SiTFT can address the above problem; Therefore people begin to use the polycrystalline SiTFT technology in organic light emitting display, and the polycrystalline SiTFT technology can solve the above problems.The crystallization technology of amorphous silicon membrane is a most critical in the polycrystalline SiTFT manufacturing technology, in order on glass substrate, to carry out crystallization, must use low temperature crystallized technology; Present main low temperature crystallized technology is laser annealing; But laser technology also has some limitation, and is unstable like the power of excimer laser, can cause the ununiformity of crystallization; Thereby cause the inhomogeneous of display image; Though and the semiconductor laser power stability, at present the power ratio of semiconductor laser is less, and the absorbing wavelength of the wavelength of semiconductor laser and silicon is difficult to mate.Laser annealing apparatus is complicated in addition, large size expansion difficulty, and price and maintenance cost are all very high.This all is one of major obstacle of polycrystalline SiTFT popularization and application.
Summary of the invention
The present invention be directed to the present problem that exists of crystallization of amorphous silicon membrane, proposed a kind of induction heating non-crystalline silicon crystallization method, utilize ruhmkorff coil to produce strong alternating magnetic field; Alternating magnetic field is near the amorphous silicon membrane that is coated with metallic membrane, and metallic membrane can produce strong induction vortex current, heating of metal film rapidly; Thereby the non-crystalline silicon below the heating of metal film, after non-crystalline silicon was heated, electroconductibility strengthened; In alternating magnetic field, also can produce vortex current, further to oneself heating, so amorphous silicon membrane is reached crystallization temperature by rapid heating; Thereby reach the purpose of crystallization, required equipment is simple, and cost is low.
Technical scheme of the present invention is: a kind of induction heating non-crystalline silicon crystallization method deposits one deck amorphous silicon membrane earlier, again with covering layer of metal film on the amorphous silicon membrane on glass substrate; Opening one end of ruhmkorff coil is pressed close to metallic membrane, and ruhmkorff coil connects induction power supply, the logical exchange current of going up KA in the ruhmkorff coil; Produce strong alternating magnetic field in the coil and vertically act on metallic membrane and amorphous silicon membrane, metallic membrane produces strong induction vortex current, rapidly the heating of metal film; Heat passage amorphous silicon membrane on the metallic membrane to following covering; After amorphous silicon membrane is reached crystallization temperature by rapid heating, remain to amorphous silicon membrane and change polysilicon membrane gradually into, after crystallization is intact glass substrate is cooled off; And the metallic membrane on the glass substrate carried out demoulding, obtained the good amorphous silicon membrane of crystallization at last.
When the strong alternating magnetic field of generation vertically acts on metallic membrane and amorphous silicon membrane in the coil, let glass substrate carry out laterally moving, make ruhmkorff coil scan crystallization to the amorphous silicon membrane on the whole glass substrate.
The thickness range of said metallic membrane is that 10 nanometers are to 10000 nanometers.
Beneficial effect of the present invention is: induction heating non-crystalline silicon crystallization method of the present invention, and induction heating equipment is fairly simple, and the cost of crystallization apparatus is lower; Induction heating speed is very fast, and is directly the need area heated to be heated, and heating efficiency is very high, and the efficiency utilization ratio is high; Induction heating can be to the glass substrate below non-crystalline silicon heating, can not make the glass substrate temperature too high and be out of shape, and helps the polycrystalline SiTFT popularization and application.
Description of drawings
Fig. 1 is an induction heating non-crystalline silicon crystallization synoptic diagram of the present invention.
Embodiment
Induction heating non-crystalline silicon crystallization synoptic diagram as shown in Figure 1, deposition one deck amorphous silicon membrane 2 on glass substrate 1 with covering layer of metal film 3 on the amorphous silicon membrane 2, is pressed close to metallic membrane with opening one end of ruhmkorff coil 4 more earlier; Ruhmkorff coil connects induction power supply, and logical powerful exchange current can reach KA in the ruhmkorff coil; Produce strong alternating magnetic field in the coil, alternating magnetic field vertical metal film and amorphous silicon membrane 2, metallic membrane 3 can produce strong induction vortex current; Heating of metal film 3 rapidly, thereby the amorphous silicon membranes 2 that cover below the heating of metal film 3 are after non-crystalline silicon is heated; Electroconductibility strengthens, and in alternating magnetic field, also produces vortex current, further amorphous silicon membrane 2 is heated; Amorphous silicon membrane 2 is heated rapidly reaches crystallization temperature, keeps for some time, makes amorphous silicon membrane 2 change polysilicon membrane gradually into.After crystallization is intact glass substrate 1 is cooled off, and the metallic membrane on the glass substrate 13 is carried out demoulding, just obtained the good amorphous silicon membrane 2 of crystallization at last.In order to carry out the big area crystallization, the glass substrate that deposits amorphous silicon membrane 21 is carried out laterally moving, thereby make the amorphous silicon membrane 2 on 4 pairs of whole base plates of ruhmkorff coil scan crystallization, thereby reach the purpose of big area plan.
Experimental procedure: with the method for chemical vapour deposition deposition one deck amorphous silicon membrane, the thickness of amorphous silicon membrane and then utilizes thermal evaporation filming equipment vapor deposition layer of metal aluminium film on amorphous silicon membrane about 30 nanometers on glass substrate; The thickness of aluminium film is about 100 nanometers; The thickness range of common metal film be 10 nanometers to 10000 nanometers, glass substrate is placed under the ruhmkorff coil mouth, to the logical high-frequency current of coil; Electric current is 1000 amperes; Stop energising after 2 minutes and cool off, after the cooling substrate is put into hydrochloric acid the aluminium film is carried out demoulding, just obtained the much better polycrystal silicon film substrate of crystallization behind the demoulding.
Claims (3)
1. an induction heating non-crystalline silicon crystallization method is characterized in that, earlier deposition one deck amorphous silicon membrane on glass substrate; With covering layer of metal film on the amorphous silicon membrane, opening one end of ruhmkorff coil is pressed close to metallic membrane again, ruhmkorff coil connects induction power supply; The logical exchange current of going up KA in the ruhmkorff coil produces strong alternating magnetic field and vertically acts on metallic membrane and amorphous silicon membrane in the coil, metallic membrane produces strong induction vortex current; Rapid heating of metal film, heat passage amorphous silicon membrane to following covering on the metallic membrane is after amorphous silicon membrane is reached crystallization temperature by rapid heating; Remain to amorphous silicon membrane and change polysilicon membrane gradually into; After crystallization is intact glass substrate is cooled off, and the metallic membrane on the glass substrate is carried out demoulding, obtained the good amorphous silicon membrane of crystallization at last.
2. according to the said induction heating non-crystalline silicon of claim 1 crystallization method; It is characterized in that; When the strong alternating magnetic field of generation vertically acts on metallic membrane and amorphous silicon membrane in the coil; Let glass substrate carry out laterally moving, make ruhmkorff coil scan crystallization the amorphous silicon membrane on the whole glass substrate.
3. according to the said induction heating non-crystalline silicon of claim 1 crystallization method, it is characterized in that the thickness range of said metallic membrane is that 10 nanometers are to 10000 nanometers.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010105477146A CN102465338A (en) | 2010-11-17 | 2010-11-17 | Method for crystallizing noncrystalline silicon by induction heating |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2010105477146A CN102465338A (en) | 2010-11-17 | 2010-11-17 | Method for crystallizing noncrystalline silicon by induction heating |
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| CN102465338A true CN102465338A (en) | 2012-05-23 |
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| CN2010105477146A Pending CN102465338A (en) | 2010-11-17 | 2010-11-17 | Method for crystallizing noncrystalline silicon by induction heating |
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| CN103560077A (en) * | 2013-11-13 | 2014-02-05 | 京东方科技集团股份有限公司 | Method for manufacturing polycrystalline silicon thin film substrate |
| CN103789710A (en) * | 2013-12-17 | 2014-05-14 | 重庆师范大学 | Amorphous substrate composite material and preparation method thereof |
| CN105097626A (en) * | 2015-07-07 | 2015-11-25 | 京东方科技集团股份有限公司 | Handling manipulator and laser annealing device |
| CN106299037A (en) * | 2015-05-13 | 2017-01-04 | 中国科学院大连化学物理研究所 | A kind of method preparing polycrystal silicon film heterojunction solar battery |
| US9887216B2 (en) | 2015-06-01 | 2018-02-06 | Boe Technology Group Co., Ltd. | Methods for manufacturing poly-silicon thin film transistor and array substrate |
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2010
- 2010-11-17 CN CN2010105477146A patent/CN102465338A/en active Pending
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| CN103560077A (en) * | 2013-11-13 | 2014-02-05 | 京东方科技集团股份有限公司 | Method for manufacturing polycrystalline silicon thin film substrate |
| CN103789710A (en) * | 2013-12-17 | 2014-05-14 | 重庆师范大学 | Amorphous substrate composite material and preparation method thereof |
| CN103789710B (en) * | 2013-12-17 | 2015-12-30 | 重庆师范大学 | Bulk metallic glass matrix composite and preparation method thereof |
| CN106299037A (en) * | 2015-05-13 | 2017-01-04 | 中国科学院大连化学物理研究所 | A kind of method preparing polycrystal silicon film heterojunction solar battery |
| US9887216B2 (en) | 2015-06-01 | 2018-02-06 | Boe Technology Group Co., Ltd. | Methods for manufacturing poly-silicon thin film transistor and array substrate |
| CN105097626B (en) * | 2015-07-07 | 2018-12-18 | 京东方科技集团股份有限公司 | A kind of carrying manipulator and laser anneal device |
| US9941147B2 (en) | 2015-07-07 | 2018-04-10 | Boe Technology Group Co., Ltd. | Transfer apparatus and laser annealing apparatus |
| CN105097626A (en) * | 2015-07-07 | 2015-11-25 | 京东方科技集团股份有限公司 | Handling manipulator and laser annealing device |
| CN109378298A (en) * | 2018-10-10 | 2019-02-22 | 京东方科技集团股份有限公司 | Show backboard and preparation method thereof and display device |
| US10923505B2 (en) | 2018-10-10 | 2021-02-16 | Boe Technology Group Co., Ltd. | Method for fabricating a display substrate by generating heat with a light shielding layer for crystallization of a semiconductor layer |
| CN109378298B (en) * | 2018-10-10 | 2022-04-29 | 京东方科技集团股份有限公司 | Display back plate, manufacturing method thereof and display device |
| CN109712933A (en) * | 2019-02-19 | 2019-05-03 | 合肥鑫晟光电科技有限公司 | Production method, display base plate and the display panel of display base plate |
| CN111111469A (en) * | 2019-12-06 | 2020-05-08 | 浙江净源膜科技股份有限公司 | Processing method of PTFE hollow fiber membrane |
| CN111111469B (en) * | 2019-12-06 | 2022-07-29 | 浙江净源膜科技股份有限公司 | Processing method of PTFE hollow fiber membrane |
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Application publication date: 20120523 |