CN102456824A - 发光二极管封装结构 - Google Patents
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 239000004065 semiconductor Substances 0.000 claims abstract description 12
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 4
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 claims description 3
- 239000002223 garnet Substances 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims description 3
- -1 phosphide Chemical class 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 239000004411 aluminium Substances 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 239000000919 ceramic Substances 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- 150000003346 selenoethers Chemical class 0.000 claims description 2
- 150000004760 silicates Chemical class 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 150000004772 tellurides Chemical class 0.000 claims description 2
- 239000011787 zinc oxide Substances 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 4
- 238000005452 bending Methods 0.000 abstract 9
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 abstract 5
- 238000000034 method Methods 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
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Abstract
一种发光二极管封装结构,包括基板、设置在基板上的电连接部及设置在电连接部上的发光二极管芯片,所述电连接部包括第一连接部和第二电连接部,所述发光二极管芯片包括半导体发光结构及设置在半导体发光结构上的电极,所述电极包括第一电极和第二电极,所述导线包括第一弯曲部和第二弯曲部,第一弯曲部由第二电极延伸而出并与第二电连接部相连,第二弯曲部由第一弯曲部延伸而出并与第二电连接部相连。本发明的发光二极管封装结构中导线具有分别与电连接部相连的第一弯曲部及第二弯曲部,可以分担导线所承受的应力,从而避免因应力的作用而使到在导线脱落或断裂而造成发光二极管芯片无法正常工作。
Description
技术领域
本发明涉及一种半导体发光元件,尤其涉及一种发光二极管封装结构。
背景技术
发光二极管(Light Emitting Diode,LED)是一种可将电流转换成特定波长范围的光的半导体元件。发光二极管以其亮度高、工作电压低、功耗小、易与集成电路匹配、驱动简单、寿命长等优点,从而可作为光源而广泛应用于照明领域。
在现有的发光二极管封装结构中,一般需要一导线使发光二极管芯片与导线架形成电学连接,此过程通常称之为打线。在打线的过程中,通常是利用打线机将导线的一端加热熔融后固定在发光二极管芯片的电极位置,然后将导线的另一端拉至导线架的另一端固定。在后续的制造过程中,由于受应力影响,导线固定在导线架的另一端容易发生断裂或者脱落,影响封装产品的良率。
发明内容
有鉴于此,有必要提供一种可防止导线断裂或脱落的发光二极管封装结构。
一种发光二极管封装结构,包括基板、设置在基板上的电连接部及发光二极管芯片,所述电连接部包括相互电性绝缘的第一连接部和第二电连接部,所述发光二极管芯片包括半导体发光结构及设置在半导体发光结构上的电极,所述电极包括第一电极和第二电极,所述第一电极与第一电连接部电性连接,所述第二电极通过导线与第二电连接部电性连接,所述导线包括第一弯曲部和第二弯曲部,所述第一弯曲部由第二电极延伸而出并与第二电连接部相连,所述第二弯曲部由第一弯曲部延伸而出并与第二电连接部相连。
本发明的发光二极管封装结构中所述导线具有分别与电连接部相连的第一弯曲部及第二弯曲部,可以分担导线所承受的应力,从而避免因应力的作用而使到在导线从电连接部上脱落或者断裂而造成发光二极管芯片无法正常工作。
下面参照附图,结合具体实施例对本发明作进一步的描述。
附图说明
图1是本发明一实施例中的发光二极管封装结构的截面示意图。
主要元件符号说明
基板 10
第一电连接部 11
第二电连接部 12
发光二极管芯片 20
半导体发光结构 21
第一电极 22
第二电极 23
导线 30
第一弯曲部 31
第一电接触点 310
第二弯曲部 32
第二电接触点 320
反光杯 40
封装体 50
荧光粉 60
具体实施方式
如图1所示,本发明一实施例的发光二极管封装结构包括基板10,设置在基板10上的发光二极管芯片20以及导线30。
所述基板10可以是铝基电路板或者是表面设置有导电线路的陶瓷基板如氧化铝基板、氧化锌基板或者硅基板等。所述基板10的表面设置有第一电连接部11和第二电连接部12。所述第一电连接部11和第二电连接部12之间相互绝缘。在本实施例中,所述第一电连接部11和所述第二电连接部12从基板10的上表面延伸到下表面,从而形成一种可表面贴装的结构。
所述发光二极管芯片20设置在第一电连接部11的上表面。所述发光二极管芯片20包括半导体发光结构21以及设置在半导体发光结构21顶部的第一电极22和第二电极23。在本实施例中,所述第一电极22、第二电极23间隔设置在半导体发光结构21远离基板10的顶面上。所述第一电极22通过一导线30与第一电连接部11形成电性连接,同样,所述第二电极23通过另一导线30与第二电连接部12形成电性连接。
所述导线30具有良好的导电性能,通常由金属材料制成。该导线30包括第一弯曲部31及第二弯曲部32。连接第一电极22与第一电连接部11的导线30的第一弯曲部31靠近第一电极22设置,其第二弯曲部32远离第一电极22设置。同样,连接第二电极23与第二电连接部12的导线30的第一弯曲部31靠近第二电极23设置,其第二弯曲部32远离第二电极23设置。所述导线30的第一弯曲部31由电极(第一电极22、第二电极23)延伸而出与电连接部(第一电连接部11、第二电连接部12)相连,形成连接点即第一电接触点310;所述导线30的第二弯曲部32再由所述第一电接触点310延伸而出与电连接部(第一电连接部11、第二电连接部12)相连,形成连接点即第二电接触点320。在本实施例中,第二弯曲部32在弯曲程度上大于第一弯曲部31,以实现良好的缓冲应力的作用。可以理解地,为适用不同情况,第二弯曲部32在弯曲程度上可以小于第一弯曲部31或者与第一弯曲部31一致。
根据需要,该发光二极管封装结构可以进一步包括一环绕所述发光二极管芯片20设置的反光杯40。所述反光杯40用以反射聚拢发光二极管芯片20发出的光线。该发光二极管封装结构可以进一步包括封装体50。该封装体50覆盖发光二极管芯片20以及导线30。该封装体50用于防止发光二极管芯片20受外界的环境如潮湿或者灰尘等杂质的影响。该封装体50可以容置于反光杯40,也可以直接形成于发光二极管芯片20上。具体地,该封装体50可以是环氧树脂或者是硅树脂又或者是玻璃材料。此外,该封装体50内还可以掺入荧光粉60以实现光的转换。所述荧光粉60可为石榴石(garnet)结构的化合物、硫化物(sulfide)、磷化物(phosphate)、氮化物(nitride)、氮氧化物(oxynitride)、硅酸盐类(silicate)、砷化物、硒化物或碲化物中的至少一种。
另外,上述发光二极管芯片20的两电极22、23并不限于上述实施例中分布于发光二极管芯片20的同一侧,其也可以位于发光二极管芯片20的相反两侧。此种情况仅需要一根导线30连接相应的电极22、23及电连接部11、12,另外的电极22、23及电连接部11、12可直接通过导电胶实现电连接而无需使用导线30。可以理解地,发光二极管芯片20的电极数量并不限于两个,具体地,可以只具有单一电极,或者具有三个、四个、五个等多个电极,只要适用电极与电连接部通过导线30相连的情况即可。
综上所述,所述导线30具有分别与电连接部11、12相连的第一弯曲部31及第二弯曲部32,可以分担导线30所承受的应力,从而避免因应力的作用而使到在导线30从电极或电连接部上脱落或断裂而造成发光二极管芯片20无法正常工作。所述导线30可以适用于各种包含打线制程的封装结构中。
应该指出,上述实施方式仅为本发明的较佳实施方式,本领域技术人员还可在本发明精神内做其它变化。这些依据本发明精神所做的变化,都应包含在本发明所要求保护的范围之内。
Claims (10)
1.一种发光二极管封装结构,包括基板、设置在基板上的电连接部及发光二极管芯片,所述电连接部包括相互电性绝缘的第一连接部和第二电连接部,所述发光二极管芯片包括半导体发光结构及设置在半导体发光结构上的电极,所述电极包括第一电极和第二电极,所述第一电极与第一电连接部电性连接,所述第二电极通过导线与第二电连接部电性连接,其特征在于:所述导线包括第一弯曲部和第二弯曲部,所述第一弯曲部由第二电极延伸而出并与第二电连接部相连,所述第二弯曲部由第一弯曲部延伸而出并与第二电连接部相连。
2.如权利要求1所述的发光二极管封装结构,其特征在于:所述第一弯曲部与第二电连接部相连形成第一电接触点。
3.如权利要求2所述的发光二极管封装结构,其特征在于:所述第二弯曲部由第一电接触点延伸而出,与第二电连接部相连形成第二电接触点。
4.如权利要求1所述的发光二极管封装结构,其特征在于:所述第二弯曲部在弯曲程度上大于第一弯曲部。
5.如权利要求1所述的发光二极管封装结构,其特征在于:所述第一弯曲部靠近第二电极设置,所述第二弯曲部远离第二电极设置。
6.如权利要求1所述的发光二极管封装结构,其特征在于:还包括环绕所述发光二极管芯片设置的反光杯。
7.如权利要求1所述的发光二极管封装结构,其特征在于:还包括封装体,该封装体完全覆盖发光二极管芯片以及导线。
8.如权利要求7所述的发光二极管封装结构,其特征在于:还包括掺入封装体内的荧光粉,所述荧光粉为石榴石结构的化合物、硫化物、磷化物、氮化物、氮氧化物、硅酸盐类、砷化物、硒化物或碲化物中的至少一种。
9.如权利要求1所述的发光二极管封装结构,其特征在于:所述基板为铝基电路板或者表面设置有导电线路的陶瓷基板如氧化铝基板、氧化锌基板或者硅基板。
10.如权利要求1所述的发光二极管封装结构,其特征在于:所述电连接部由所述基板的上表面延伸至下表面。
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CN108604629A (zh) * | 2016-02-05 | 2018-09-28 | Lg 伊诺特有限公司 | 发光元件封装 |
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