CN102456824A - 发光二极管封装结构 - Google Patents

发光二极管封装结构 Download PDF

Info

Publication number
CN102456824A
CN102456824A CN2010105155299A CN201010515529A CN102456824A CN 102456824 A CN102456824 A CN 102456824A CN 2010105155299 A CN2010105155299 A CN 2010105155299A CN 201010515529 A CN201010515529 A CN 201010515529A CN 102456824 A CN102456824 A CN 102456824A
Authority
CN
China
Prior art keywords
bend
electrode
electrical connection
connection section
led
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2010105155299A
Other languages
English (en)
Inventor
汪楷伦
许时渊
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rongchuang Energy Technology Co ltd
Zhanjing Technology Shenzhen Co Ltd
Original Assignee
Rongchuang Energy Technology Co ltd
Zhanjing Technology Shenzhen Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rongchuang Energy Technology Co ltd, Zhanjing Technology Shenzhen Co Ltd filed Critical Rongchuang Energy Technology Co ltd
Priority to CN2010105155299A priority Critical patent/CN102456824A/zh
Priority to US13/149,790 priority patent/US8344408B2/en
Publication of CN102456824A publication Critical patent/CN102456824A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Led Device Packages (AREA)

Abstract

一种发光二极管封装结构，包括基板、设置在基板上的电连接部及设置在电连接部上的发光二极管芯片，所述电连接部包括第一连接部和第二电连接部，所述发光二极管芯片包括半导体发光结构及设置在半导体发光结构上的电极，所述电极包括第一电极和第二电极，所述导线包括第一弯曲部和第二弯曲部，第一弯曲部由第二电极延伸而出并与第二电连接部相连，第二弯曲部由第一弯曲部延伸而出并与第二电连接部相连。本发明的发光二极管封装结构中导线具有分别与电连接部相连的第一弯曲部及第二弯曲部，可以分担导线所承受的应力，从而避免因应力的作用而使到在导线脱落或断裂而造成发光二极管芯片无法正常工作。

Description

发光二极管封装结构
技术领域
本发明涉及一种半导体发光元件，尤其涉及一种发光二极管封装结构。
背景技术
发光二极管(Light Emitting Diode，LED)是一种可将电流转换成特定波长范围的光的半导体元件。发光二极管以其亮度高、工作电压低、功耗小、易与集成电路匹配、驱动简单、寿命长等优点，从而可作为光源而广泛应用于照明领域。
在现有的发光二极管封装结构中，一般需要一导线使发光二极管芯片与导线架形成电学连接，此过程通常称之为打线。在打线的过程中，通常是利用打线机将导线的一端加热熔融后固定在发光二极管芯片的电极位置，然后将导线的另一端拉至导线架的另一端固定。在后续的制造过程中，由于受应力影响，导线固定在导线架的另一端容易发生断裂或者脱落，影响封装产品的良率。
发明内容
有鉴于此，有必要提供一种可防止导线断裂或脱落的发光二极管封装结构。
一种发光二极管封装结构，包括基板、设置在基板上的电连接部及发光二极管芯片，所述电连接部包括相互电性绝缘的第一连接部和第二电连接部，所述发光二极管芯片包括半导体发光结构及设置在半导体发光结构上的电极，所述电极包括第一电极和第二电极，所述第一电极与第一电连接部电性连接，所述第二电极通过导线与第二电连接部电性连接，所述导线包括第一弯曲部和第二弯曲部，所述第一弯曲部由第二电极延伸而出并与第二电连接部相连，所述第二弯曲部由第一弯曲部延伸而出并与第二电连接部相连。
本发明的发光二极管封装结构中所述导线具有分别与电连接部相连的第一弯曲部及第二弯曲部，可以分担导线所承受的应力，从而避免因应力的作用而使到在导线从电连接部上脱落或者断裂而造成发光二极管芯片无法正常工作。
下面参照附图，结合具体实施例对本发明作进一步的描述。
附图说明
图1是本发明一实施例中的发光二极管封装结构的截面示意图。
主要元件符号说明
基板              10
第一电连接部      11
第二电连接部      12
发光二极管芯片    20
半导体发光结构    21
第一电极          22
第二电极          23
导线              30
第一弯曲部        31
第一电接触点      310
第二弯曲部        32
第二电接触点      320
反光杯            40
封装体            50
荧光粉            60
具体实施方式
如图1所示，本发明一实施例的发光二极管封装结构包括基板10，设置在基板10上的发光二极管芯片20以及导线30。
所述基板10可以是铝基电路板或者是表面设置有导电线路的陶瓷基板如氧化铝基板、氧化锌基板或者硅基板等。所述基板10的表面设置有第一电连接部11和第二电连接部12。所述第一电连接部11和第二电连接部12之间相互绝缘。在本实施例中，所述第一电连接部11和所述第二电连接部12从基板10的上表面延伸到下表面，从而形成一种可表面贴装的结构。
所述发光二极管芯片20设置在第一电连接部11的上表面。所述发光二极管芯片20包括半导体发光结构21以及设置在半导体发光结构21顶部的第一电极22和第二电极23。在本实施例中，所述第一电极22、第二电极23间隔设置在半导体发光结构21远离基板10的顶面上。所述第一电极22通过一导线30与第一电连接部11形成电性连接，同样，所述第二电极23通过另一导线30与第二电连接部12形成电性连接。
所述导线30具有良好的导电性能，通常由金属材料制成。该导线30包括第一弯曲部31及第二弯曲部32。连接第一电极22与第一电连接部11的导线30的第一弯曲部31靠近第一电极22设置，其第二弯曲部32远离第一电极22设置。同样，连接第二电极23与第二电连接部12的导线30的第一弯曲部31靠近第二电极23设置，其第二弯曲部32远离第二电极23设置。所述导线30的第一弯曲部31由电极(第一电极22、第二电极23)延伸而出与电连接部(第一电连接部11、第二电连接部12)相连，形成连接点即第一电接触点310；所述导线30的第二弯曲部32再由所述第一电接触点310延伸而出与电连接部(第一电连接部11、第二电连接部12)相连，形成连接点即第二电接触点320。在本实施例中，第二弯曲部32在弯曲程度上大于第一弯曲部31，以实现良好的缓冲应力的作用。可以理解地，为适用不同情况，第二弯曲部32在弯曲程度上可以小于第一弯曲部31或者与第一弯曲部31一致。
根据需要，该发光二极管封装结构可以进一步包括一环绕所述发光二极管芯片20设置的反光杯40。所述反光杯40用以反射聚拢发光二极管芯片20发出的光线。该发光二极管封装结构可以进一步包括封装体50。该封装体50覆盖发光二极管芯片20以及导线30。该封装体50用于防止发光二极管芯片20受外界的环境如潮湿或者灰尘等杂质的影响。该封装体50可以容置于反光杯40，也可以直接形成于发光二极管芯片20上。具体地，该封装体50可以是环氧树脂或者是硅树脂又或者是玻璃材料。此外，该封装体50内还可以掺入荧光粉60以实现光的转换。所述荧光粉60可为石榴石(garnet)结构的化合物、硫化物(sulfide)、磷化物(phosphate)、氮化物(nitride)、氮氧化物(oxynitride)、硅酸盐类(silicate)、砷化物、硒化物或碲化物中的至少一种。
另外，上述发光二极管芯片20的两电极22、23并不限于上述实施例中分布于发光二极管芯片20的同一侧，其也可以位于发光二极管芯片20的相反两侧。此种情况仅需要一根导线30连接相应的电极22、23及电连接部11、12，另外的电极22、23及电连接部11、12可直接通过导电胶实现电连接而无需使用导线30。可以理解地，发光二极管芯片20的电极数量并不限于两个，具体地，可以只具有单一电极，或者具有三个、四个、五个等多个电极，只要适用电极与电连接部通过导线30相连的情况即可。
综上所述，所述导线30具有分别与电连接部11、12相连的第一弯曲部31及第二弯曲部32，可以分担导线30所承受的应力，从而避免因应力的作用而使到在导线30从电极或电连接部上脱落或断裂而造成发光二极管芯片20无法正常工作。所述导线30可以适用于各种包含打线制程的封装结构中。
应该指出，上述实施方式仅为本发明的较佳实施方式，本领域技术人员还可在本发明精神内做其它变化。这些依据本发明精神所做的变化，都应包含在本发明所要求保护的范围之内。

Claims (10)

1.一种发光二极管封装结构，包括基板、设置在基板上的电连接部及发光二极管芯片，所述电连接部包括相互电性绝缘的第一连接部和第二电连接部，所述发光二极管芯片包括半导体发光结构及设置在半导体发光结构上的电极，所述电极包括第一电极和第二电极，所述第一电极与第一电连接部电性连接，所述第二电极通过导线与第二电连接部电性连接，其特征在于：所述导线包括第一弯曲部和第二弯曲部，所述第一弯曲部由第二电极延伸而出并与第二电连接部相连，所述第二弯曲部由第一弯曲部延伸而出并与第二电连接部相连。
2.如权利要求1所述的发光二极管封装结构，其特征在于：所述第一弯曲部与第二电连接部相连形成第一电接触点。
3.如权利要求2所述的发光二极管封装结构，其特征在于：所述第二弯曲部由第一电接触点延伸而出，与第二电连接部相连形成第二电接触点。
4.如权利要求1所述的发光二极管封装结构，其特征在于：所述第二弯曲部在弯曲程度上大于第一弯曲部。
5.如权利要求1所述的发光二极管封装结构，其特征在于：所述第一弯曲部靠近第二电极设置，所述第二弯曲部远离第二电极设置。
6.如权利要求1所述的发光二极管封装结构，其特征在于：还包括环绕所述发光二极管芯片设置的反光杯。
7.如权利要求1所述的发光二极管封装结构，其特征在于：还包括封装体，该封装体完全覆盖发光二极管芯片以及导线。
8.如权利要求7所述的发光二极管封装结构，其特征在于：还包括掺入封装体内的荧光粉，所述荧光粉为石榴石结构的化合物、硫化物、磷化物、氮化物、氮氧化物、硅酸盐类、砷化物、硒化物或碲化物中的至少一种。
9.如权利要求1所述的发光二极管封装结构，其特征在于：所述基板为铝基电路板或者表面设置有导电线路的陶瓷基板如氧化铝基板、氧化锌基板或者硅基板。
10.如权利要求1所述的发光二极管封装结构，其特征在于：所述电连接部由所述基板的上表面延伸至下表面。
CN2010105155299A 2010-10-21 2010-10-21 发光二极管封装结构 Pending CN102456824A (zh)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN2010105155299A CN102456824A (zh) 2010-10-21 2010-10-21 发光二极管封装结构
US13/149,790 US8344408B2 (en) 2010-10-21 2011-05-31 Light emitting diode package having improved wire bonding structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2010105155299A CN102456824A (zh) 2010-10-21 2010-10-21 发光二极管封装结构

Publications (1)

Publication Number Publication Date
CN102456824A true CN102456824A (zh) 2012-05-16

Family

ID=45972236

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2010105155299A Pending CN102456824A (zh) 2010-10-21 2010-10-21 发光二极管封装结构

Country Status (2)

Country Link
US (1) US8344408B2 (zh)
CN (1) CN102456824A (zh)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102903822A (zh) * 2011-07-26 2013-01-30 隆达电子股份有限公司 发光装置
CN103545435A (zh) * 2012-07-10 2014-01-29 深圳市斯迈得光电子有限公司 一种高可靠性的应用于smd发光二极管的焊线装置
CN103594599A (zh) * 2012-08-13 2014-02-19 深圳市斯迈得光电子有限公司 一种高可靠性高亮度的smd发光二极管器件
CN105355759A (zh) * 2015-12-11 2016-02-24 江苏鸿佳电子科技有限公司 一种单面发光封装led
CN108604629A (zh) * 2016-02-05 2018-09-28 Lg 伊诺特有限公司 发光元件封装

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103280515B (zh) * 2013-05-27 2016-01-13 广东深莱特科技股份有限公司 具有分散电极引线周边应力的led封装器件及其制造方法
CN103413883B (zh) * 2013-05-27 2015-12-09 广东深莱特科技股份有限公司 改善发光效率的半导体发光器件及其制造方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030207510A1 (en) * 2002-02-25 2003-11-06 Seiko Epson Corporation Semiconductor device, and its manufacturing method, circuit substrate, and electronic apparatus
US20070015353A1 (en) * 2005-07-14 2007-01-18 Craig David M Electrically connecting substrate with electrical device
CN201204212Y (zh) * 2008-05-30 2009-03-04 深圳市瑞丰光电子有限公司 一种led封装结构
WO2009072786A2 (en) * 2007-12-06 2009-06-11 Seoul Semiconductor Co., Ltd. Led package and method for fabricating the same
CN102237468A (zh) * 2010-04-29 2011-11-09 刘士龙 发光二极管封装结构及其制造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4101468B2 (ja) * 2001-04-09 2008-06-18 豊田合成株式会社 発光装置の製造方法
JP5467799B2 (ja) * 2009-05-14 2014-04-09 ルネサスエレクトロニクス株式会社 半導体装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030207510A1 (en) * 2002-02-25 2003-11-06 Seiko Epson Corporation Semiconductor device, and its manufacturing method, circuit substrate, and electronic apparatus
US20070015353A1 (en) * 2005-07-14 2007-01-18 Craig David M Electrically connecting substrate with electrical device
WO2009072786A2 (en) * 2007-12-06 2009-06-11 Seoul Semiconductor Co., Ltd. Led package and method for fabricating the same
CN201204212Y (zh) * 2008-05-30 2009-03-04 深圳市瑞丰光电子有限公司 一种led封装结构
CN102237468A (zh) * 2010-04-29 2011-11-09 刘士龙 发光二极管封装结构及其制造方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102903822A (zh) * 2011-07-26 2013-01-30 隆达电子股份有限公司 发光装置
CN103545435A (zh) * 2012-07-10 2014-01-29 深圳市斯迈得光电子有限公司 一种高可靠性的应用于smd发光二极管的焊线装置
CN103594599A (zh) * 2012-08-13 2014-02-19 深圳市斯迈得光电子有限公司 一种高可靠性高亮度的smd发光二极管器件
CN103594599B (zh) * 2012-08-13 2016-05-04 深圳市斯迈得光电子有限公司 一种高可靠性高亮度的smd发光二极管器件
CN105355759A (zh) * 2015-12-11 2016-02-24 江苏鸿佳电子科技有限公司 一种单面发光封装led
CN108604629A (zh) * 2016-02-05 2018-09-28 Lg 伊诺特有限公司 发光元件封装

Also Published As

Publication number Publication date
US8344408B2 (en) 2013-01-01
US20120098003A1 (en) 2012-04-26

Similar Documents

Publication Publication Date Title
CN102456824A (zh) 发光二极管封装结构
EP1928030B1 (en) Led lighting fixture
EP2187459B1 (en) Light emitting device
US20100270565A1 (en) Semiconductor light-emitting device and method of fabricating the same
US20070176182A1 (en) Structure for integrating LED circuit onto heat-dissipation substrate
US20110175511A1 (en) Light emitting diode and light source module having same
US7999276B2 (en) Chip-type LED package and light emitting apparatus having the same
CN104465956A (zh) 一种一体化led的封装结构
US20070246726A1 (en) Package structure of light emitting device
US20110278639A1 (en) LED Package Structure
CN102544303A (zh) 发光二极管封装结构
TW201242101A (en) Islanded carrier for light emitting device
US20140001500A1 (en) Led light bar
KR101202168B1 (ko) 고전압 발광 다이오드 패키지
TWI487153B (zh) 發光二極體
US20150140701A1 (en) Method for manufacturing light emitting diode package
CN102479907A (zh) 发光二极管封装结构
TWI415311B (zh) 發光二極體封裝結構
CN101465395A (zh) 发光二极管
CN102456812B (zh) 发光二极管封装结构
CN102456822A (zh) 发光二极管封装结构
US20130069217A1 (en) Semiconductor device and electrode terminal
CN102456800B (zh) 发光二极管封装结构及其封装方法
CN102412358A (zh) 封装基板
TWI466342B (zh) 發光二極體封裝結構及其封裝方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C12 Rejection of a patent application after its publication
RJ01 Rejection of invention patent application after publication

Application publication date: 20120516