CN102456412A - 多晶硅熔丝构成的otp器件及其操作方法 - Google Patents
多晶硅熔丝构成的otp器件及其操作方法 Download PDFInfo
- Publication number
- CN102456412A CN102456412A CN2010105215088A CN201010521508A CN102456412A CN 102456412 A CN102456412 A CN 102456412A CN 2010105215088 A CN2010105215088 A CN 2010105215088A CN 201010521508 A CN201010521508 A CN 201010521508A CN 102456412 A CN102456412 A CN 102456412A
- Authority
- CN
- China
- Prior art keywords
- fuse
- electrode
- fuse resistor
- selection
- polysilicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 24
- 229920005591 polysilicon Polymers 0.000 title claims abstract description 24
- 238000000034 method Methods 0.000 title claims abstract description 13
- 239000000463 material Substances 0.000 claims abstract description 6
- 230000001413 cellular effect Effects 0.000 claims description 10
- 238000010276 construction Methods 0.000 claims description 10
- 238000013461 design Methods 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 229910021332 silicide Inorganic materials 0.000 claims description 5
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 5
- 238000007667 floating Methods 0.000 abstract description 7
- 229910044991 metal oxide Inorganic materials 0.000 abstract 1
- 150000004706 metal oxides Chemical class 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 238000003860 storage Methods 0.000 description 5
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 229910019001 CoSi Inorganic materials 0.000 description 1
- 229910008484 TiSi Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical group [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000002784 hot electron Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910021341 titanium silicide Inorganic materials 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
Images
Landscapes
- Design And Manufacture Of Integrated Circuits (AREA)
- Read Only Memory (AREA)
Abstract
Description
Claims (7)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201010521508.8A CN102456412B (zh) | 2010-10-27 | 2010-10-27 | 多晶硅熔丝构成的otp器件及其操作方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201010521508.8A CN102456412B (zh) | 2010-10-27 | 2010-10-27 | 多晶硅熔丝构成的otp器件及其操作方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102456412A true CN102456412A (zh) | 2012-05-16 |
CN102456412B CN102456412B (zh) | 2015-06-03 |
Family
ID=46039499
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201010521508.8A Active CN102456412B (zh) | 2010-10-27 | 2010-10-27 | 多晶硅熔丝构成的otp器件及其操作方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN102456412B (zh) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102931190A (zh) * | 2012-11-14 | 2013-02-13 | 兰州理工大学 | 能实现匹配的比例集成电阻版图结构 |
CN104821319A (zh) * | 2014-02-04 | 2015-08-05 | 爱思开海力士有限公司 | 半导体器件及其操作方法 |
CN107910035A (zh) * | 2017-11-30 | 2018-04-13 | 上海华力微电子有限公司 | Otp存储器 |
CN108694976A (zh) * | 2017-03-31 | 2018-10-23 | 恩智浦有限公司 | 存储器*** |
US10127993B2 (en) | 2015-07-29 | 2018-11-13 | National Chiao Tung University | Dielectric fuse memory circuit and operation method thereof |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050167728A1 (en) * | 2004-01-29 | 2005-08-04 | Chandrasekharan Kothandaraman | Single-poly 2-transistor based fuse element |
CN101101793A (zh) * | 2006-07-04 | 2008-01-09 | 三星电子株式会社 | 包括硫族化物材料的一次可编程器件及其操作方法 |
CN101681879A (zh) * | 2007-05-09 | 2010-03-24 | 飞思卡尔半导体公司 | 操作存储器电路的电子装置和方法 |
-
2010
- 2010-10-27 CN CN201010521508.8A patent/CN102456412B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050167728A1 (en) * | 2004-01-29 | 2005-08-04 | Chandrasekharan Kothandaraman | Single-poly 2-transistor based fuse element |
CN101101793A (zh) * | 2006-07-04 | 2008-01-09 | 三星电子株式会社 | 包括硫族化物材料的一次可编程器件及其操作方法 |
CN101681879A (zh) * | 2007-05-09 | 2010-03-24 | 飞思卡尔半导体公司 | 操作存储器电路的电子装置和方法 |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102931190A (zh) * | 2012-11-14 | 2013-02-13 | 兰州理工大学 | 能实现匹配的比例集成电阻版图结构 |
CN104821319A (zh) * | 2014-02-04 | 2015-08-05 | 爱思开海力士有限公司 | 半导体器件及其操作方法 |
CN104821319B (zh) * | 2014-02-04 | 2019-06-25 | 爱思开海力士有限公司 | 半导体器件及其操作方法 |
US10127993B2 (en) | 2015-07-29 | 2018-11-13 | National Chiao Tung University | Dielectric fuse memory circuit and operation method thereof |
CN108694976A (zh) * | 2017-03-31 | 2018-10-23 | 恩智浦有限公司 | 存储器*** |
CN108694976B (zh) * | 2017-03-31 | 2024-04-16 | 恩智浦有限公司 | 存储器*** |
CN107910035A (zh) * | 2017-11-30 | 2018-04-13 | 上海华力微电子有限公司 | Otp存储器 |
Also Published As
Publication number | Publication date |
---|---|
CN102456412B (zh) | 2015-06-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN106981313B (zh) | 反熔丝型一次编程存储器单元的编程方法 | |
US7839674B2 (en) | Programmable matrix array with chalcogenide material | |
US8369151B2 (en) | Nonvolatile semiconductor memory device | |
US8659929B2 (en) | Amorphous silicon RRAM with non-linear device and operation | |
US6512700B1 (en) | Non-volatile memory cell having channel initiated secondary electron injection programming mechanism | |
US20170148801A1 (en) | Antifuse-type one time programming memory cell and array structure with same | |
CN102456412B (zh) | 多晶硅熔丝构成的otp器件及其操作方法 | |
US7872898B2 (en) | One time programmable read only memory and programming method thereof | |
CN104979353A (zh) | 反熔丝单次可编程存储单元以及存储器的操作方法 | |
US20100164603A1 (en) | Programmable fuse and anti-fuse elements and methods of changing conduction states of same | |
TWI496154B (zh) | 應用於非揮發性記憶體中的一位元記憶胞 | |
US20060097342A1 (en) | Programmable matrix array with phase-change material | |
US8673692B2 (en) | Charging controlled RRAM device, and methods of making same | |
US9384815B2 (en) | Mechanisms for preventing leakage currents in memory cells | |
CN110649029B (zh) | 多次编程的非挥发性存储器 | |
JP2005109480A (ja) | ワンタイム・プログラマブル・メモリ素子をプログラムするための装置および方法 | |
CN108369817A (zh) | 电阻***叉点存储阵列 | |
KR102460296B1 (ko) | 싱글 폴리 mtp 셀 및 그의 동작 방법 | |
US7075127B2 (en) | Single-poly 2-transistor based fuse element | |
CN203456098U (zh) | 可编程存储单元 | |
CN101030582B (zh) | 一种单一内嵌多晶硅存储结构及其操作方法 | |
Balatti et al. | Variability and failure of set process in HfO 2 RRAM | |
CN106531211B (zh) | Eprom单元及其制造方法、包括其的eprom单元阵列 | |
Son et al. | A highly reliable multi-cell antifuse scheme using DRAM cell capacitors | |
Shukuri et al. | CMOS Process Compatible ie-Flash (inverse gate electrode Flash) Technology for System-on-a Chip |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20140103 |
|
C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 201206 PUDONG NEW AREA, SHANGHAI TO: 201203 PUDONG NEW AREA, SHANGHAI |
|
TA01 | Transfer of patent application right |
Effective date of registration: 20140103 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Applicant after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Applicant before: Shanghai Huahong NEC Electronics Co., Ltd. |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant |