CN102445576A - Method for performing temperature compensation on metering chip and manganin sheet in electric meter - Google Patents
Method for performing temperature compensation on metering chip and manganin sheet in electric meter Download PDFInfo
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- CN102445576A CN102445576A CN2011102630806A CN201110263080A CN102445576A CN 102445576 A CN102445576 A CN 102445576A CN 2011102630806 A CN2011102630806 A CN 2011102630806A CN 201110263080 A CN201110263080 A CN 201110263080A CN 102445576 A CN102445576 A CN 102445576A
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Abstract
The embodiment of the invention provides a method for performing temperature compensation on a metering chip and a manganin sheet in an electric meter. The method comprises the following steps of: determining temperature rise error delta of the metering chip according to a current temperature value of the metering chip; determining temperature rise error alpha of the manganin sheet according to a current effective value of the manganin sheet and a temperature rise error curve of the manganin sheet; converting the temperature rise error delta of the chip and the temperature rise error alpha of the manganin sheet into a temperature compensation value err of the electric meter; and performing the temperature compensation on output power of the electric meter by using the temperature compensation value err of the electric meter. In the method provided by the embodiment of the invention, the temperature rise error delta of the metering chip and the temperature rise error alpha of the manganin sheet are comprehensively considered, the output power of the electric meter can be dynamically adjusted under different temperature conditions, the influence caused to the accuracy of the electric meter by the temperature is overcome, and the accuracy of the electric meter in a temperature rise process is effectively controlled.
Description
Technical field
The present invention relates to the electric energy metrical technical field in the data service, particularly a kind of method that computation chip in the ammeter and copper-manganese sheet are carried out temperature compensation.
Background technology
Along with the continuous propelling of national intelligent grid, intelligent electric meter is popularized gradually, and the measuring accuracy of ammeter is had higher requirement.The copper-manganese sheet is accomplished current sample in ammeter, and the resistance temperature influence of copper-manganese sheet is more serious, makes in the temperature rise process ammeter precision be difficult to control.At present heating does not also have perfect disposal route to copper-manganese, generally all leans on the precision of copper-manganese sheet self to guarantee the precision of ammeter.
Summary of the invention
In order to address the deficiencies of the prior art; The embodiment of the invention provides a kind of method that computation chip in the ammeter and copper-manganese sheet are carried out temperature compensation; Taken all factors into consideration the temperature-rise effect of copper-manganese sheet and computation chip, and to the error that is caused compensates because temperature rises.
To achieve these goals, the embodiment of the invention provides a kind of method that computation chip in the ammeter and copper-manganese sheet are carried out temperature compensation, and said method comprises: the temperature rise error delta of confirming computation chip according to the current temperature value of computation chip; Confirm the temperature rise error alpha of copper-manganese sheet according to the temperature rise graph of errors of the current effective value of copper-manganese sheet and copper-manganese sheet; The temperature rise error alpha of the temperature rise error delta of said chip and said copper-manganese sheet is converted into the temperature compensation value err of said ammeter; Adopt the temperature compensation value err of said ammeter that the output power of said ammeter is carried out temperature compensation.
Said current temperature value according to computation chip confirms that the temperature rise error delta of computation chip comprises: the Current Temperatures t that measures computation chip; If t is not higher than normal temperature t
0, then computation chip is not carried out temperature compensation, temperature rise error delta=0 of said computation chip; As t＞t
0The time, according to Current Temperatures t and normal temperature t
0Between the chip error side-play amount A that once caused of temperature difference and the every rising of chip temperature, generate the temperature rise error delta of computation chip.
Confirm that according to the current effective value of copper-manganese sheet and the temperature rise graph of errors of copper-manganese sheet the temperature rise error alpha of copper-manganese sheet comprises: the current effective value I that measures said copper-manganese sheet; If said current effective value I is not higher than preset lower limit I
0, then the copper-manganese sheet is not compensated temperature rise error alpha=0 of said copper-manganese sheet; As I＞I
0, confirm the temperature rise error alpha of copper-manganese sheet according to the temperature rise graph of errors of said copper-manganese sheet.
The temperature compensation value err that the temperature rise error alpha of the temperature rise error delta of said chip and said copper-manganese sheet is converted into said ammeter comprises: the intrinsic gain compensation value ErrPgain when obtaining the normal temperature of storage in advance among the power gain adjustment register GPQ of said ammeter; The temperature rise error delta of the computation chip that obtains after the intrinsic gain compensation value ErrPgain during according to said normal temperature, temperature raise and the temperature rise error alpha of copper-manganese sheet generate the temperature compensation value err of said ammeter.
The temperature compensation value err that adopts said ammeter carries out temperature compensation to the power of said ammeter and comprises: said temperature compensation value err is write among the power gain adjustment register GPQ of said ammeter; Adopt the err value among the said register GPQ, the output power value of output ammeter is finely tuned.
Adopt the err value among the said register GPQ, the output power value of output ammeter is finely tuned and comprised: said temperature compensation value err is multiplied each other as gain coefficient and actual measurement performance number, obtain the amount trimmed of output power value; Amount trimmed addition with actual measurement performance number and said output power value obtains adjusted output power value.
Beneficial effect of the present invention is; The method synthesis of the embodiment of the invention has been considered the temperature rise error delta of computation chip and the temperature rise error alpha of copper-manganese sheet; And can be implemented under the different temperature condition ammeter output power is dynamically adjusted; Overcome the influence that temperature causes the ammeter precision, ammeter precision in the temperature rise process has been carried out effective control.
Description of drawings
Fig. 1 a is the temperature rise error curve diagram of two kinds of copper-manganese type selectings;
Fig. 1 b is the temperature rise error curve diagram of other two kinds of copper-manganese type selectings;
Fig. 2 is the differential mode wiring circuit diagram of embodiment of the invention current channel;
Fig. 3 is the internal circuit configuration schematic diagram of embodiment of the invention computation chip;
Fig. 4 is the temperature compensation overall flow figure of the embodiment of the invention;
Fig. 5 is the concrete temperature compensation process flow diagram of of the embodiment of the invention.
Embodiment
The embodiment of the invention provides a kind of method that computation chip in the ammeter and copper-manganese sheet are carried out temperature compensation.For the purpose, technical scheme and the advantage that make the embodiment of the invention clearer; To combine the accompanying drawing in the embodiment of the invention below; Technical scheme in the embodiment of the invention is carried out clear, intactly description; Obviously, described embodiment is the present invention's part embodiment, rather than whole embodiment.Based on the embodiment among the present invention, those of ordinary skills are not making the every other embodiment that is obtained under the creative work prerequisite, all belong to the scope of the present invention's protection.
Draw through experiment that ammeter is generated heat, the higher ammeter thermal value that causes of the relay contact resistance in the ammeter is bigger, thereby the temperature that drives copper-manganese raises, and causes its resistance to change.Copper-manganese with 200 micro-ohms is an example, when variation error of positive and negative 0.5 micro-ohm takes place for it, has the ammeter deviation about 0.2%, can inference ammeter error in dipping comes from the resistance error of copper-manganese basically.Simultaneously, (as being higher than 30 degree) also can be introduced chip error when chip temperature is too high.The embodiment of the invention has been taken all factors into consideration this two kinds of influences that error is brought the ammeter error in dipping, and carries out the temperature compensation of ammeter according to these two kinds of errors.
In order to make the copper-manganese error as far as possible little, when the copper-manganese type selecting of common relay, to guarantee the consistance and the directivity of copper-manganese batch, promptly to spend in the scope of 60 degree fluctuating error 40 minimum for temperature, or fluctuation tendency is consistent.Fig. 1 a is the temperature rise graph of errors of two kinds of copper-manganese type selectings, and Fig. 1 b is the temperature rise graph of errors of other two kinds of copper-manganese type selectings.Can find out, be numbered the copper-manganese that is numbered FVF7.731.678-12 among copper-manganese and Fig. 1 b of FVF7.731.678-41 among Fig. 1 a, fluctuate little, trend comparison is consistent.
When the fluctuation of the temperature rise graph of errors of copper-manganese was big, shown in Fig. 1 a, the copper-manganese that is numbered FVF7.731.678-31 was spent to fluctuation between 60 degree bigger 30, and trend is also inconsistent, in order to alleviate error effect, need carry out temperature compensation to the copper-manganese sheet.To being numbered the copper-manganese of FVF7.731.678-31; Choose 194.5 micro-ohms and be worth participation calculating as a reference; Experiment proof self-heating temperature can not surpass 70 degree; Therefore choose compensation range and spend between 60 degree 30, the steady state value compensation that this scope is carried out is reasonably, the copper-manganese temperature rise error alpha of this moment=(194.5-195)/195=-0.00256.When selecting the copper-manganese of big resistance for use, the copper-manganese value with the fluctuation of temperature when very little α can ignore, the ammeter error is mainly come to chip.
Along with the rising of temperature, the chip heating also can cause the error deviation of ammeter.Because of temperature rise process chips reference voltage and voltage channel altogether, so the voltage channel signal sampling can not change.And current channel is the differential mode mode of connection, so when reference voltage generation temperature is floated, can bring chip error.Fig. 2 is the differential mode wiring circuit diagram of embodiment of the invention current channel, and as shown in Figure 2, wherein VINMnCuP1 and VINMnCuN1 connect the copper-manganese sheet, and V1P and V1N connect computation chip.
The chip error side-play amount A that the every rising of chip temperature was once being caused can find from handbook.With ATT7053 is example, and this side-play amount A can value 30ppm/ ℃, chip temperature rise error delta=(t-t
0) * 30ppm/ ℃; T is a Current Temperatures, and this temperature can read out through temperature sensor, t
0Be the temperature value of normal temperature, can get 25 ℃-30 ℃, the chip error that obtains is a nondimensional relative quantity, and unit is ppm (1,000,000/), and present embodiment is with t
0=30 ℃ describe for example.
Fig. 3 is the internal circuit configuration schematic diagram of embodiment of the invention computation chip.Describe how the embodiment of the invention carries out temperature compensation according to copper-manganese temperature rise error alpha and chip temperature rise error delta to ammeter process in detail below in conjunction with Fig. 3.
How circuit shown in Figure 3 when (1) at first normal temperature being described carries out intrinsic error compensation, and the yield value ErrPgain of this compensation can be also having write among the register GPQ of when dispatching from the factory, just mixing up.
At first; The phase place of current channel can cause current phase to squint in analog-digital conversion process and under the influence of components and parts such as electron capacitance on the line; Through the phase correction unit current phase is proofreaied and correct earlier: I=Im*COS (ω t+ φ), φ is exactly the skew of electric current.Phs is a current offset adjustment register, when power factor is 0.5L, can be worth φ to this and obtain and be filled among this register Phs.Then, obtain the digital sample values I of electric current through high-pass filtering (mainly being digital filtering) elimination low-frequency noise with after disturbing.In like manner,, voltage channel obtains the digital sample values U of voltage after carrying out high-pass filtering to the voltage sample value.Actual measurement power W1=U*I.
When the electric current of input end is zero, though the components and parts in the circuit shown in Figure 3 are not worked, can produce an offset error because ambient noise disturbs, make the position of ammeter its indication in zero input also not at zero point, so need carry out zero adjustment.Read this off-set value through output terminal this moment, is written in the power excursion adjustment component (POS).This deviation is very little, just in zero input, guarantees to be output as zero and be provided with.
When input current and voltage are non-vanishing; Components and parts in the circuit also can produce error when work; This error generally than the error of zero adjustment much bigger; Cause being bound to exist a deviation between output valve and the standard value, i.e. also can there be deviation in the source end real power W2 of the value of actual measurement power W1 and input.This deviation is filled among the power gain adjustment register GPQ through inverse operation, adjusts performance number through the yield value ErrPgain among the register GPQ, can think to equal source end real power W2 through the value that adjusted output terminal obtains.Among Fig. 3; Represent with P through adjusted performance number; After power calculation (comprising calculating respectively meritorious, reactive power), what preserve in the PowerP register is the active power value after calculating, and the output of PowerP pin is inner through adjusted active power pulse.
Whole process be appreciated that for: Y=KX is standard value parametric equation (wherein X=U*I); The K here is 1, but in fact this 1 since error can not be guaranteed, so will finely tune.Promptly depositing gain ErrPgain is the fine setting to 1 times of relation, W2=(1+ErrPgain) * U*I; When ErrPgain=0, W1=1*U*I.Promptly can be thought to be equal to former performance number W2, and not controlled performance number is actual measurement power W1 by adjusted performance number.
So the error during normal temperature: Err=(W1-W2)/W2=(1-(1+ErrPgain)) * U*I/ (1+ErrPgain) * U*I=(ErrPgain)/(1+ErrPgain)--------(1);
That is ErrPgain=(Err)/(1+Err)--------(2);
And the gain of ErrPgain calibration when being normal temperature, ErrPgain has just write the value among the register GPQ when dispatching from the factory.
(2) explain then how circuit shown in Figure 3 carried out temperature compensation when temperature raise.
Consider the error component that the temperature rise process is extra, present embodiment adopts following formula to obtain the error of temperature rise process, and this error e rr will insert among the register GPQ as the gain of temperature rise process.
err＝-(Err+δ)/(1+Err+δ)--------(3)
Wherein, δ=Δ+α, Δ are the temperature rise error of chip, and α is the temperature rise error of copper-manganese sheet.
Aggregative formula 2 can get with formula 3:
err＝(δ-ErrPgain+δ*ErrPgain)/(1+δ*ErrPgain+δ)--------(4)
Through the err value is write among the GPQ again, and the performance number that obtains adjusted just can get the power of output to the end.Deferent segment can obtain adjusted real power value W3 in the temperature rise process.
W3＝(1+err)*U*I--------(5)
Fig. 4 is the temperature compensation overall flow figure of the embodiment of the invention, and as shown in Figure 4: this method comprises:
S401, confirm the temperature rise error delta of computation chip according to the current temperature value of computation chip;
S402, confirm the temperature rise error alpha of copper-manganese sheet according to the temperature rise graph of errors of the current effective value of copper-manganese sheet and copper-manganese sheet;
S403, the temperature rise error alpha of the temperature rise error delta of said chip and said copper-manganese sheet converted into the temperature compensation value err of said ammeter;
The temperature compensation value err of S404, the said ammeter of employing carries out temperature compensation to the output power of said ammeter.
Particularly, S401 comprises: the Current Temperatures t that measures computation chip; If t is not higher than normal temperature t
0, then computation chip is not carried out temperature compensation, temperature rise error delta=0 of said computation chip; As t＞t
0The time, according to Current Temperatures t and normal temperature t
0Between the chip error side-play amount A that once caused of temperature difference and the every rising of chip temperature, generate the temperature rise error delta of computation chip.
Particularly, S402 comprises: the current effective value I that measures said copper-manganese sheet; If said current effective value I is not higher than preset lower limit I
0, then the copper-manganese sheet is not compensated temperature rise error alpha=0 of said copper-manganese sheet; As I＞I
0, confirm the temperature rise error alpha of copper-manganese sheet according to the temperature rise graph of errors of said copper-manganese sheet.How to confirm the temperature rise error alpha of copper-manganese sheet.
Particularly, S403 comprises: the intrinsic gain compensation value ErrPgain when obtaining the normal temperature of storing in advance among the power gain adjustment register GPQ of said ammeter; The temperature rise error delta of the computation chip that obtains after the intrinsic gain compensation value ErrPgain during according to said normal temperature, temperature raise and the temperature rise error alpha of copper-manganese sheet generate the temperature compensation value err of said ammeter.
Particularly, S404 comprises: said temperature compensation value err is write among the power gain adjustment register GPQ of said ammeter; Adopt the err value among the said register GPQ, the output power value of ammeter is finely tuned.
Wherein, adopt the err value among the said register GPQ, the output power value of output ammeter is finely tuned and comprised: said temperature compensation value err is multiplied each other as gain coefficient and actual measurement performance number, obtain the amount trimmed of output power value; Amount trimmed addition with actual measurement performance number and said output power value obtains adjusted output power value.
About the method for the temperature rise error delta that how to generate computation chip, how to confirm the temperature rise error alpha of copper-manganese sheet method, how to generate the method for ammeter temperature compensation value err; And the method for how according to the value of err the output power value of ammeter to be finely tuned specifies no longer expansion here in the aforementioned embodiment for example.
What need statement is; Only be used for this case explanation that makes an explanation for the concrete computing method of each step of Fig. 4 in the previous embodiment; And be not to be used for the protection domain of claim of the present invention is limited; The temperature rise error delta of the every temperature rise error alpha of considering the copper-manganese sheet simultaneously and computation chip is come the common temperature compensation value err that confirms ammeter, and adopts reasonable variation that this err comes the dynamic additive method of adjustment ammeter output power all within the protection domain of claim of the present invention.
Fig. 5 is the concrete temperature compensation process flow diagram of of the embodiment of the invention.In this concrete temperature compensation process, suppose t
0=30 ℃, I
0=40A, the chip error side-play amount A that the every rising of chip temperature was once being caused is 30ppm, and the model that the copper-manganese sheet is selected for use is FVF7.731.678-31, its temperature rise error alpha adopts the algorithm of previous embodiment to obtain.As shown in Figure 5:
The temperature value of measured chip judges whether Current Temperatures is higher than 30 ℃, if then carry out the temperature compensation of chip, its temperature rise error delta=(t-30) ℃ * 30ppm/ ℃, if temperature is not higher than 30 ℃, then chip is not carried out temperature compensation, Δ=0.
Read the current effective value of copper-manganese sheet, judge whether current effective value is higher than 40A, if then carry out the temperature compensation of copper-manganese sheet; Its temperature rise error alpha=(194.5-195)/195=-0.00256; If current effective value is not higher than 40A, then the copper-manganese sheet is not carried out temperature compensation, α=0.
With the temperature rise error delta of computation chip and the temperature rise error alpha addition of copper-manganese sheet; Obtain an intermediate value δ; The error that temperature causes converts the δ value in the register ammeter temperature compensation value err, and adopts this err value that the output power of ammeter is finely tuned, so that can be cancelled.
The method synthesis of the embodiment of the invention has been considered the temperature rise error delta of computation chip and the temperature rise error alpha of copper-manganese sheet; And can be implemented under the different temperature condition ammeter output power is dynamically adjusted; Overcome the influence that temperature causes the ammeter precision, ammeter precision in the temperature rise process has been carried out effective control.
Above embodiment is only in order to the technical scheme of the explanation embodiment of the invention, but not to its restriction; Although the embodiment of the invention has been carried out detailed explanation with reference to previous embodiment; Those of ordinary skill in the art is to be understood that: it still can be made amendment to the technical scheme that aforementioned each embodiment put down in writing, and perhaps part technical characterictic wherein is equal to replacement; And these are revised or replacement, do not make the spirit and the scope of each embodiment technical scheme of the essence disengaging embodiment of the invention of relevant art scheme.
Claims (6)
1. the method that computation chip in the ammeter and copper-manganese sheet are carried out temperature compensation is characterized in that, said method comprises:
Confirm the temperature rise error delta of computation chip according to the current temperature value of computation chip;
Confirm the temperature rise error alpha of copper-manganese sheet according to the temperature rise graph of errors of the current effective value of copper-manganese sheet and copper-manganese sheet;
The temperature rise error alpha of the temperature rise error delta of said chip and said copper-manganese sheet is converted into the temperature compensation value err of said ammeter;
Adopt the temperature compensation value err of said ammeter that the output power of said ammeter is carried out temperature compensation.
2. method according to claim 1 is characterized in that, said current temperature value according to computation chip confirms that the temperature rise error delta of computation chip comprises:
Measure the Current Temperatures t of computation chip;
If t is not higher than normal temperature t
0, then computation chip is not carried out temperature compensation, temperature rise error delta=0 of said computation chip;
As t＞t
0The time, according to Current Temperatures t and normal temperature t
0Between the chip error side-play amount A that once caused of temperature difference and the every rising of chip temperature, generate the temperature rise error delta of computation chip.
3. method according to claim 1 is characterized in that, confirms that according to the current effective value of copper-manganese sheet and the temperature rise graph of errors of copper-manganese sheet the temperature rise error alpha of copper-manganese sheet comprises:
Measure the current effective value I of said copper-manganese sheet;
If said current effective value I is not higher than preset lower limit I
0, then the copper-manganese sheet is not compensated temperature rise error alpha=0 of said copper-manganese sheet;
As I＞I
0, confirm the temperature rise error alpha of copper-manganese sheet according to the temperature rise graph of errors of said copper-manganese sheet.
4. method according to claim 1 is characterized in that, the temperature compensation value err that the temperature rise error alpha of the temperature rise error delta of said chip and said copper-manganese sheet is converted into said ammeter comprises:
Intrinsic gain compensation value ErrPgain when obtaining the normal temperature of storing in advance among the power gain adjustment register GPQ of said ammeter;
The temperature rise error delta of the computation chip that obtains after the intrinsic gain compensation value ErrPgain during according to said normal temperature, temperature raise and the temperature rise error alpha of copper-manganese sheet generate the temperature compensation value err of said ammeter.
5. method according to claim 1 is characterized in that, adopts the temperature compensation value err of said ammeter that the output power of said ammeter is carried out temperature compensation and comprises:
Said temperature compensation value err is write among the power gain adjustment register GPQ of said ammeter;
Adopt the err value among the said register GPQ, the output power value of output ammeter is finely tuned.
6. method according to claim 5 is characterized in that, adopts the err value among the said register GPQ, the output power value of output ammeter is finely tuned comprise:
Said temperature compensation value err is multiplied each other as gain coefficient and actual measurement performance number, obtain the amount trimmed of output power value;
Amount trimmed addition with actual measurement performance number and said output power value obtains adjusted output power value.
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| CN103743933A (en) * | 2013-12-31 | 2014-04-23 | 江苏林洋电子股份有限公司 | Compensation algorithm of single phase watt hour meter on self-heating effect and single phase watt hour meter |
| CN103743933B (en) * | 2013-12-31 | 2016-01-27 | 江苏林洋电子股份有限公司 | A kind of single-phase electric energy meter is to the compensation method from heat affecting |
| CN105676163B (en) * | 2016-03-07 | 2018-08-21 | 宁波迦南智能电气股份有限公司 | A kind of electric energy meter is from heat affecting error compensating method |
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| CN107782938A (en) * | 2017-09-14 | 2018-03-09 | 宁波三星医疗电气股份有限公司 | The error compensating method of electric energy meter self-heating |
| CN107886702A (en) * | 2017-10-31 | 2018-04-06 | 国网江苏省电力公司泰州供电公司 | Telecommunication electric energy meter and its workflow based on carrier communication |
| CN108761161A (en) * | 2018-04-09 | 2018-11-06 | 南方电网科学研究院有限责任公司 | Method and device for compensating temperature influence errors of electric energy meter |
| CN108761161B (en) * | 2018-04-09 | 2020-03-10 | 南方电网科学研究院有限责任公司 | Method and device for compensating temperature influence errors of electric energy meter |
| CN109061549A (en) * | 2018-10-12 | 2018-12-21 | 浙江正泰仪器仪表有限责任公司 | A kind of electric energy meter detecting measurement error |
| CN109061549B (en) * | 2018-10-12 | 2021-03-05 | 浙江正泰仪器仪表有限责任公司 | Electric energy meter for detecting metering error |
| CN109799473A (en) * | 2019-02-26 | 2019-05-24 | 西门子电力自动化有限公司 | Measurement data calibration method and device for electric system |
| CN109799473B (en) * | 2019-02-26 | 2021-12-28 | 西门子电力自动化有限公司 | Measurement data calibration method and device for power system |
| CN110133348A (en) * | 2019-05-08 | 2019-08-16 | 国电南瑞三能电力仪表(南京)有限公司 | A kind of compensation method, system and the storage medium of electric energy meter self-heating error |
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