CN102437226A - Carbon nanotube-silicon film laminated solar battery and preparation method thereof - Google Patents

Carbon nanotube-silicon film laminated solar battery and preparation method thereof Download PDF

Info

Publication number
CN102437226A
CN102437226A CN2011104145260A CN201110414526A CN102437226A CN 102437226 A CN102437226 A CN 102437226A CN 2011104145260 A CN2011104145260 A CN 2011104145260A CN 201110414526 A CN201110414526 A CN 201110414526A CN 102437226 A CN102437226 A CN 102437226A
Authority
CN
China
Prior art keywords
thin film
film
silicon thin
silicon
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN2011104145260A
Other languages
Chinese (zh)
Other versions
CN102437226B (en
Inventor
韦进全
王红光
白曦
贾怡
朱宏伟
王昆林
吴德海
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tsinghua University
Original Assignee
Tsinghua University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tsinghua University filed Critical Tsinghua University
Priority to CN2011104145260A priority Critical patent/CN102437226B/en
Publication of CN102437226A publication Critical patent/CN102437226A/en
Priority to PCT/CN2012/086350 priority patent/WO2013086963A1/en
Application granted granted Critical
Publication of CN102437226B publication Critical patent/CN102437226B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0368—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors
    • H01L31/03682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors including only elements of Group IV of the Periodic System
    • H01L31/03685—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors including only elements of Group IV of the Periodic System including microcrystalline silicon, uc-Si
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0376—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors
    • H01L31/03762—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors including only elements of Group IV of the Periodic System
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/221—Carbon nanotubes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/545—Microcrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

The invention discloses a carbon nanotube-silicon film laminated solar battery and a preparation method thereof. The laminated battery solar battery comprises a transparent underlay, a transparent conductive film, a silicon film layer, a carbon nanotube film and a back electrode, which are sequentially laminated, wherein the silicon film layer consists of at least two layers of silicon films, and silicon in the silicon film layer is amorphous silicon or microcrystal silicon; and the silicon film layer and the carbon nanotube film form a heterojunction. The silicon film can be a positive-negative (PN) double-layer film, a positive intrinsic negative (PIN) three-layer film, a negative positive negative (NPN) three-layer film or a negative positive intrinsic negative (NPIN) four-layer film. In the film laminated battery, the carbon nanotube is used as a P+ layer and forms a laminated battery having a CNT/P+-P/N structure with the silicon film, the carbon nanotube and the silicon film form a laminated battery with a CNT/P+-P/I/N structure, with a CNT/P+-N/P/N structure or with a CNT/P+-N/P/I/N structure. The carbon nanotube-silicon film laminated battery can effectively improve the open-circuit voltage, the conversion efficiency and the like of the battery, and has the characteristics of simple process and low cost.

Description

A kind of CNT-silicon thin film lamination solar cell and preparation method thereof
Technical field
The present invention relates to a kind of CNT-silicon thin film lamination solar cell and preparation method thereof.
Background technology
Along with the appearance of energy crisis, people begin to find the importance of regenerative resource, and regenerative resource becomes the problem that everybody more and more pays close attention to.The solar energy conduct is a kind of reproducible clean energy resource wherein, has obtained relevant application in every field.Wherein, the application of solar cell is particularly extensive, currently marketed solar cell mainly with silica-based be main.Silicon solar cell mainly is divided into monocrystalline silicon battery, three kinds of polycrystal silicon cell and amorphous (crystallite) silicon thin-film batteries, and wherein, silicon thin-film battery has that manufacturing materials consumption is few, and area is big, and it is low to make energy consumption, and cost is low, has obtained development rapidly in recent years.The photoelectric conversion efficiency of the mass-produced amorphous silicon thin-film solar cell of large tracts of land is 5～8% at present, and the open circuit voltage of its single-unit silicon thin-film battery is about 0.8V.
CNT (Carbon nanotube, CNT) be by one or more layers Graphene curl form, the full carbon molecule of tubulose that diameter is nanometer scale.CNT is synthetic so far black-materials, and it is all high to have shown that CNT absorbs the comparable existing all material of ability of sunlight.CNT can be transformed into electric energy with the luminous energy that absorbs, and is right in the inner light induced electron-hole that produces of CNT.People's such as Stewart DA Theoretical Calculation shows that the quantum efficiency of CNT opto-electronic conversion can reach 18% (Stewart DA, et al., Phys.Rev.Lett., 93:107401,2004; Nano Lett., 5:219,2005).The spectral region of the photoelectric respone of CNT is very wide, can cover from ultraviolet light to infrared full spectral region.Wei advances congruent people and discovers (Wei et al.; Small, 2:988,2006); Carbon nano-tube macroscopic body has very strong photogenerated current and photoconductive behavior; Like diameter is the carbon nano-tube macroscopic body of 0.39mm, and its photic electric current can reach the mA magnitude, and visible light and infrared light district have been contained in the response interval of photic electric current.Show that thus CNT can the excitation electron transition under the irradiation of incident light, causes the separation and the migration of electron-hole pair, produce photo-generated carrier, thereby form photoelectric current.Research also finds, when rayed during in double-walled and multi-walled carbon nano-tubes junction or CNT and metal junctions, the photic electric current of CNT obviously strengthens (Sun JL, et al., Appl.Phys.Lett., 88:131107,2006).Show thus,,, constitute solar cell efficiently just might increase substantially photoelectric current if construct suitable carbon nanotube heterojunction.
The researcher has carried out the application study work of CNT in fields such as inorganic heterogeneous solar cell, organic solar batteries and DSSCs.Wei advances congruent people and then utilizes p type CNT and n type silicon, has made up CNT-silicon heterojunction solar battery solar cell.This seminar combines carbon nano-tube film with n type monocrystalline silicon, constitute heterojunction solar battery, its conversion efficiency 5～7% (Jia Y et al., Advanced Materials, 2008,20,4594-4598); And on heterojunction boundary, drip rare nitric acid or dilute sulfuric acid, can the conversion efficiency of CNT-silicon heterogenous solar cell be increased to 13.8% (Jia Y, et al., Nano Letters, 2011,11).In the structure of this CNT-silicon heterogenous solar cell, sunlight incides the heterojunction surface from CNT one side; Carbon nano-tube film all both as the knot material of heterojunction, has served as the top electrode of electrically conducting transparent again.The equal patent applied for of these achievements in research has perhaps obtained the patent for invention mandate (patent No.: ZL200610169827.0).The researcher also handles and improves CNT-silicon heterogenous solar cell with diverse ways in trial, with further raising battery efficiency.
In order to reduce the cost of solar cell, the researcher combines CNT with silicon thin film, to constitute the heterojunction solar battery of CNT-silicon thin film.People (Gobbo SD, et al., Applied Physics Letters 2011 such as Gobbo SD; 98,183113) SWCN is distributed in the solution, combines with noncrystal membrane then; Constituted heterojunction solar battery, but its performance is very low, open circuit voltage is 0.2～0.5V; Conversion efficiency＜0.1% can't practical application.This battery is the heterojunction battery of unijunction; And CNT all is positioned at the upper surface of silicon thin film, and sunlight penetrates carbon nano-tube film earlier, just is radiated on the silicon thin film then; For sunlight is radiated on the heterojunction as much as possible, carbon nano-tube film can not be too thick.
Summary of the invention
The purpose of this invention is to provide a kind of CNT-silicon thin film lamination solar cell and preparation method thereof.Be intended to utilize the excellent optics electric property of CNT to combine,, reduce the cost of manufacture of solar cell simultaneously to improve the conversion efficiency of solar cell with silicon thin-film battery.
CNT provided by the present invention-silicon thin film lamination solar cell, it comprises range upon range of in regular turn: transparent substrates (5), transparent conductive film (4), silicon membrane layer (3), carbon nano-tube film (2) and back electrode (1); Wherein, said silicon membrane layer is made up of two-layer at least silicon thin film, and silicon thin film wherein is amorphous silicon or microcrystal silicon.
Said carbon nano-tube film covers the silicon membrane layer top continuously, is used to absorb the sunlight that penetrates silicon thin film.And constitute the heterojunction battery with said silicon membrane layer, become lamination solar cell with multilayer silicon thin film structure simultaneously.
Silicon membrane layer among the present invention specifically can be selected from following any one: PN type silicon bi-layer film, three layers of silicon thin film of PIN type, three layers of silicon thin film of NPN type and four layers of silicon thin film of NPIN type.The thickness of said silicon membrane layer can be 0.2～2 μ m.
In the pellicular cascade battery, CNT (CNT) is as P +Layer constitutes CNT/P with above-mentioned silicon thin film +The laminated cell of-P/N structure, perhaps CNT/P +The laminated cell of-P/I/N structure, perhaps CNT/P +The laminated cell of-N/P/N structure, perhaps CNT/P +The laminated cell of-N/P/I/N structure.
Carbon nano-tube film specifically can be single wall carbon nano-tube film, double-walled carbon nano-tube film or multi-wall carbon nano-tube film among the present invention, and its thickness can be 0.05～2 μ m.This CNT in solar cell of the present invention both as conductive film, also as the part of heterojunction, simultaneously also as important photoelectric conversion material.
Transparent conductive film specifically can be indium tin oxide films, zinc oxide aluminum film, fluorine doped tin oxide or Graphene etc. among the present invention, and its thickness is 0.1～2 μ m.
Said transparent substrates can be processed by rigid materials such as glass, also can be processed like plastics, PET etc. by the organic substance flexible material.Said back electrode can be processed by materials such as Al, Mo, Ag, Au, Graphenes.
Prepare the method for above-mentioned CNT-silicon thin film lamination solar cell, comprise the steps:
1) vapor deposition transparent conductive film on transparent substrates, and draw with lead;
2) on said transparent conductive film, deposit N type silicon thin film, P type silicon thin film successively, form PN type silicon bi-layer film; Or on said transparent conductive film, deposit N type silicon thin film, I type silicon thin film, P type silicon thin film successively, form three layers of silicon thin film of PIN type; Or on said transparent conductive film, depositing N type silicon thin film, P type silicon thin film, N type silicon thin film successively, form three layers of silicon thin film of NPN type; Or on said transparent conductive film, depositing N type silicon thin film, I type silicon thin film, P type silicon thin film, N type silicon thin film successively, form three layers of silicon thin film of NPIN type;
3) carbon nano-tube film is transferred on the said silicon thin film, forms laminated cell;
4) on said carbon nano-tube film, make back electrode, and draw, obtain said CNT-silicon thin film lamination solar cell with lead.
This CNT-silicon thin film laminated cell can effectively improve open circuit voltage, conversion efficiency of battery etc., and it is simple to have technology, characteristics with low cost.
The present invention's invention combines carbon nano-tube film and multilayer silicon thin film, forms the laminated cell of being made up of CNT-silicon thin film and silicon thin film itself.In this CNT-silicon thin film laminated cell, sunlight is from silicon thin film one side incident, and carbon nano-tube film is as last light-absorption layer, so carbon nano-tube film can be thicker, with abundant absorption sunlight.
The present invention compared with prior art; Following advantage and outstanding effect are arranged: used carbon nano-tube film is a kind of fexible film among the present invention, can be continuous spread into silicon film surface, constitute the heterojunction battery; Constitute lamination solar cell with the multilayer silicon thin film, improved the open circuit voltage of battery.The carbon nano-tube film high conductivity helps the transmission of electric charge, can improve short circuit current.In addition, carbon nano-tube film has improved battery to infrared light, and absorption of visible light helps conversion efficiency that improves by solar cell etc.This carbon nano-tube film-silicon thin film lamination solar cell, its open circuit voltage can reach 1.3V, and short circuit current can reach 17mA/cm 2, conversion efficiency can reach 7.0%, has broad application prospects.
Description of drawings
Fig. 1 is carbon nano-tube film provided by the invention-silicon thin film lamination solar cell structural representation; Among the figure: the 1-back electrode; The 2-carbon nano-tube film; The silicon membrane layer of 3-PN structure; The 4-transparent conductive film; The 5-transparent substrates.
Fig. 2 is carbon nano-tube film provided by the invention-silicon thin film lamination solar cell structural representation; Among the figure: the 1-back electrode; The 2-carbon nano-tube film; The silicon membrane layer of 3-PIN structure; The 4-transparent conductive film; The 5-transparent substrates.
Fig. 3 is carbon nano-tube film provided by the invention-silicon thin film lamination solar cell structural representation; Among the figure: the 1-back electrode; The 2-carbon nano-tube film; The silicon membrane layer of 3-NPN structure; The 4-transparent conductive film; The 5-transparent substrates.
Fig. 4 is carbon nano-tube film provided by the invention-silicon thin film lamination solar cell structural representation; Among the figure: the 1-back electrode; The 2-carbon nano-tube film; The silicon membrane layer of 3-NPIN structure; The 4-transparent conductive film; The 5-transparent substrates.
Fig. 5 shifts the stereoscan photograph on silicon thin film for CNT.
Fig. 6 is that the CNT-silicon thin film lamination solar cell of embodiment 1 preparation is at standard sources (AM1.5,100mW/cm 2) following current density-voltage curve of testing.
Fig. 7 is that the CNT-silicon thin film lamination solar cell of embodiment 2 preparation is at standard sources (AM1.5,100mW/cm 2) following current density-voltage curve of testing.
Fig. 8 is that the CNT-silicon thin film lamination solar cell of embodiment 3 preparation is at standard sources (AM1.5,100mW/cm 2) following current density-voltage curve of testing.
Embodiment
Below in conjunction with accompanying drawing and embodiment the present invention is further specified, but the present invention is not limited thereto.
Experimental technique described in the following embodiment like no specified otherwise, is conventional method; Said reagent and material like no specified otherwise, all can obtain from commercial sources.
The silicon thin film that the silicon thin film that is adopted among the following embodiment can buy from market; Also can pass through the preparation of plasma enhanced chemical vapor deposition (PECVD) or physical vapour deposition (PVD) methods such as (PCVD).
Fig. 1 is a kind of CNT of the present invention-silicon thin film lamination solar cell structural representation, and this solar cell comprises silicon membrane layer 3, carbon nano-tube film 2 and the back electrode 1 of transparent substrates 5, transparent conductive film 4, PN junction structure from bottom to up successively; Vapor deposition transparent conductive film 4 on transparent substrates 5 deposits N type silicon membrane layer, P type silicon membrane layer 3 then successively earlier, afterwards carbon nano-tube film 2 is transferred on the P type silicon thin film vapor deposition back electrode 1.
The preparation and the Performance Detection of embodiment 1, CNT-silicon thin film lamination solar cell
1) the thick indium tin oxide transparent conducting film of vapor deposition one deck 200nm on glass substrate, and draw with lead;
2) on transparent conductive film, deposit the thick N type of 50nm amorphous silicon layer successively, 500nm thick I type amorphous silicon layer and the thick P type of 50nm amorphous silicon layer with the plasma reinforced chemical vapour deposition method;
3) single wall carbon nano-tube film with thickness 200nm spreads on the P type amorphous silicon layer, and carbon nano-tube film is closely contacted with silicon thin film;
4) the aluminium electrode that vapor deposition 20nm is thick on carbon nano-tube film, and draw with lead, CNT-silicon thin film lamination solar cell obtained.
Performance test:
At standard sources (AM1.5,100mW/cm 2) test down, the open circuit voltage that records prepared solar cell is 1.3V, short circuit current is 16.7mA/cm 2, photoelectric conversion efficiency is 7.0%.
The preparation and the Performance Detection of embodiment 2, CNT-silicon thin film lamination solar cell
1) the thick indium tin oxide transparent conducting film of vapor deposition one deck 100nm on glass substrate;
2) on transparent conductive film, deposit the thick N type of 500nm silicon membrane layer, 10nm thick I type silicon membrane layer and the thick P type of 1500nm silicon membrane layer successively with the plasma reinforced chemical vapour deposition method;
3) single wall carbon nano-tube film of thickness 200nm is transferred on the P type silicon layer;
4) the aluminium electrode that vapor deposition 20nm is thick on carbon nano-tube film, and draw with lead, CNT-silicon thin film lamination solar cell obtained.
5) under ESEM, detect and analyze
See accompanying drawing 5
Performance test:
At standard sources (AM1.5,100mW/cm 2) test down, open circuit voltage is 1.1V, short circuit current is 11.1mA/cm 2, photoelectric conversion efficiency is 3.8%.
The preparation and the Performance Detection of embodiment 3, CNT-silicon thin film lamination solar cell
1) the thick indium tin oxide transparent conducting film of vapor deposition one deck 200nm on glass substrate, and draw with lead;
2) on transparent conductive film, deposit the thick N type of 100nm amorphous silicon layer successively, the thick I type of 800nm amorphous silicon layer, 100nm thick P type amorphous silicon layer and the thick N type of 50nm amorphous silicon layer with the plasma reinforced chemical vapour deposition method;
3) single wall carbon nano-tube film with thickness 300nm spreads on the N type amorphous silicon layer, and carbon nano-tube film is closely contacted with silicon thin film;
4) the aluminium electrode that vapor deposition 50nm is thick on carbon nano-tube film, and draw with lead, CNT-silicon thin film lamination solar cell obtained.
Performance test:
At standard sources (AM1.5,100mW/cm 2) test down, the open circuit voltage that records prepared solar cell is 1.6V, short circuit current is 4.6mA/cm 2, conversion efficiency is 5.7%.

Claims (9)

1. CNT-silicon thin film lamination solar cell; It comprises range upon range of in regular turn: transparent substrates, transparent conductive film, silicon membrane layer, carbon nano-tube film and back electrode; It is characterized in that: said silicon membrane layer is made up of two-layer at least silicon thin film, and the silicon in the said silicon membrane layer is amorphous silicon or microcrystal silicon; Said silicon membrane layer and said carbon nano-tube film constitute heterojunction.
2. CNT according to claim 1-silicon thin film lamination solar cell is characterized in that: said silicon membrane layer be selected from following any one: PN type silicon bi-layer film, three layers of silicon thin film of PIN type, three layers of silicon thin film of NPN type and four layers of silicon thin film of NPIN type; The thickness of said silicon membrane layer is 0.2～2 μ m.
3. CNT according to claim 2-silicon thin film lamination solar cell is characterized in that: said silicon membrane layer is a PN type silicon bi-layer film, and the P layer in the said PN type silicon bi-layer film combines to form CNT/P with said carbon nano-tube film +The lamination solar cell of-P/N structure.
4. CNT according to claim 2-silicon thin film lamination solar cell is characterized in that: said silicon membrane layer is three layers of silicon thin film of PIN type, and the P layer in three layers of silicon thin film of said PIN type combines to form CNT/P with said carbon nano-tube film +The lamination solar cell of-P/I/N structure.
5. CNT according to claim 2-silicon thin film lamination solar cell is characterized in that: said silicon membrane layer is three layers of silicon thin film of NPN type, and the N layer in three layers of silicon thin film of said NPN type combines to form CNT/P with said carbon nano-tube film +The lamination solar cell of-N/P/N structure.
6. CNT according to claim 2-silicon thin film lamination solar cell is characterized in that: said silicon membrane layer is four layers of silicon thin film of NPIN type, and the N layer in four layers of silicon thin film of said NPIN type combines to form CNT/P with said carbon nano-tube film +The lamination solar cell of-N/P/I/N structure.
7. according to each described CNT-silicon thin film lamination solar cell among the claim 1-6; It is characterized in that: said carbon nano-tube film is single wall carbon nano-tube film, double-walled carbon nano-tube film or multi-wall carbon nano-tube film, and its thickness is 0.05～2 μ m.
8. according to each described CNT-silicon thin film lamination solar cell among the claim 1-7; It is characterized in that: said transparent conductive film is indium tin oxide films, zinc oxide aluminum film, fluorine doped tin oxide film or graphene film, and its thickness is 0.1～2 μ m; Said transparent substrates is processed by rigid material or flexible material; Said back electrode is processed by Al, Mo, Ag, Au or Graphene.
9. prepare the method for each said CNT-silicon thin film lamination solar cell among the claim 2-8, comprise the steps:
1) vapor deposition transparent conductive film on transparent substrates, and draw with lead;
2) on said transparent conductive film, deposit N type silicon thin film, P type silicon thin film successively, form PN type silicon bi-layer film; Or on said transparent conductive film, deposit N type silicon thin film, I type silicon thin film, P type silicon thin film successively, form three layers of silicon thin film of PIN type; Or on said transparent conductive film, depositing N type silicon thin film, P type silicon thin film, N type silicon thin film successively, form three layers of silicon thin film of NPN type; Or on said transparent conductive film, depositing N type silicon thin film, I type silicon thin film, P type silicon thin film, N type silicon thin film successively, form three layers of silicon thin film of NPIN type;
3) carbon nano-tube film is transferred on the said silicon thin film, forms laminated cell;
4) on said carbon nano-tube film, make back electrode, and draw, obtain said CNT-silicon thin film lamination solar cell with lead.
CN2011104145260A 2011-12-13 2011-12-13 Carbon nanotube-silicon film laminated solar battery and preparation method thereof Active CN102437226B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN2011104145260A CN102437226B (en) 2011-12-13 2011-12-13 Carbon nanotube-silicon film laminated solar battery and preparation method thereof
PCT/CN2012/086350 WO2013086963A1 (en) 2011-12-13 2012-12-11 Solar cell and method for preparing same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2011104145260A CN102437226B (en) 2011-12-13 2011-12-13 Carbon nanotube-silicon film laminated solar battery and preparation method thereof

Publications (2)

Publication Number Publication Date
CN102437226A true CN102437226A (en) 2012-05-02
CN102437226B CN102437226B (en) 2013-12-11

Family

ID=45985200

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2011104145260A Active CN102437226B (en) 2011-12-13 2011-12-13 Carbon nanotube-silicon film laminated solar battery and preparation method thereof

Country Status (2)

Country Link
CN (1) CN102437226B (en)
WO (1) WO2013086963A1 (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013086963A1 (en) * 2011-12-13 2013-06-20 清华大学 Solar cell and method for preparing same
CN104269447A (en) * 2014-09-19 2015-01-07 无锡中能晶科新能源科技有限公司 Polycrystalline silicon solar cell panel
CN106449815A (en) * 2016-08-11 2017-02-22 上海大学 Heterojunction solar cell device production method based on amorphous silicon thin films
CN108074992A (en) * 2016-11-18 2018-05-25 清华大学 It is a kind of using carbon nanomaterial film as the crystal silicon solar energy battery of hetero-junctions back surface field
CN111188058A (en) * 2020-02-10 2020-05-22 桂林电子科技大学 System for producing hydrogen by full-film silicon semiconductor double-electrode unbiased photoelectrocatalysis full-decomposition of water and application thereof
CN112786715A (en) * 2019-11-08 2021-05-11 清华大学 Solar cell

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105655433A (en) * 2016-04-13 2016-06-08 黄广明 Crystalline silicon/amorphous silicon two-section solar cell and production method thereof

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003209270A (en) * 2002-01-15 2003-07-25 Toyota Central Res & Dev Lab Inc Carbon photoelectric element and its manufacturing method
CN101794841A (en) * 2010-03-03 2010-08-04 上海交通大学 Solar cell preparation method based on carbon nano tube synergy
CN102142469A (en) * 2010-12-01 2011-08-03 南开大学 P type microcrystalline silicon carbon film material for PI flexible substrate solar cell and preparation

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1866546A (en) * 2006-05-18 2006-11-22 威海蓝星玻璃股份有限公司 Solar cell and preparing method thereof
CN100405617C (en) * 2006-12-29 2008-07-23 清华大学 Carbon nano tube film-based solar energy battery and its preparing method
EP2432027A4 (en) * 2009-04-30 2017-06-28 Industry-University Cooperation Foundation Hanyang University Silicon solar cell comprising a carbon nanotube layer
CN101740648A (en) * 2009-12-17 2010-06-16 南开大学 Silicon germanium thin film solar cell with window layer of p-type crystallite silicon germanium and preparation method thereof
CN102437226B (en) * 2011-12-13 2013-12-11 清华大学 Carbon nanotube-silicon film laminated solar battery and preparation method thereof

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003209270A (en) * 2002-01-15 2003-07-25 Toyota Central Res & Dev Lab Inc Carbon photoelectric element and its manufacturing method
CN101794841A (en) * 2010-03-03 2010-08-04 上海交通大学 Solar cell preparation method based on carbon nano tube synergy
CN102142469A (en) * 2010-12-01 2011-08-03 南开大学 P type microcrystalline silicon carbon film material for PI flexible substrate solar cell and preparation

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013086963A1 (en) * 2011-12-13 2013-06-20 清华大学 Solar cell and method for preparing same
CN104269447A (en) * 2014-09-19 2015-01-07 无锡中能晶科新能源科技有限公司 Polycrystalline silicon solar cell panel
CN104269447B (en) * 2014-09-19 2016-06-22 无锡赛晶太阳能有限公司 A kind of polysilicon solar cell plate
CN106449815A (en) * 2016-08-11 2017-02-22 上海大学 Heterojunction solar cell device production method based on amorphous silicon thin films
CN108074992A (en) * 2016-11-18 2018-05-25 清华大学 It is a kind of using carbon nanomaterial film as the crystal silicon solar energy battery of hetero-junctions back surface field
CN112786715A (en) * 2019-11-08 2021-05-11 清华大学 Solar cell
CN111188058A (en) * 2020-02-10 2020-05-22 桂林电子科技大学 System for producing hydrogen by full-film silicon semiconductor double-electrode unbiased photoelectrocatalysis full-decomposition of water and application thereof

Also Published As

Publication number Publication date
CN102437226B (en) 2013-12-11
WO2013086963A1 (en) 2013-06-20

Similar Documents

Publication Publication Date Title
CN102437226B (en) Carbon nanotube-silicon film laminated solar battery and preparation method thereof
CN104134711B (en) A kind of preparation method of perovskite solar cell
CN103943697B (en) Flexible and transparent solaode and preparation method thereof
CN103579419B (en) A kind of Graphene/MoS2/ Si hetero-junction thin-film solar cell and preparation method thereof
TWI409963B (en) Coaxial nanowire solar cell structure
CN101369610A (en) Novel structural silicon nanometer line solar battery
CN203481251U (en) Thin film solar cell
CN105470398B (en) Organic thin film solar cell based on tri compound cathode buffer layer and preparation method thereof
CN101262024A (en) Silicon nano line/non crystal heterogeneous agglomeration solar battery
Wang et al. High-performance ZnO nanosheets/nanocrystalline aggregates composite photoanode film in dye-sensitized solar cells
CN106129249B (en) A kind of perovskite-quantum dot double absorption layer solar battery and preparation method thereof
CN105576127B (en) A kind of Multiple heterostructures interface perovskite solar cell and preparation method thereof
KR101415168B1 (en) Preparation method of fibrous solar cells having metal grid electrode, and the fibrous solar cells thereby
CN101257094A (en) Silicon nanometer wire solar cell apparatus
CN103000709A (en) Back electrode, back electrode absorbing layer composite structure and solar cell
KR101333714B1 (en) Preparation method of fibrous solar cells, and the fibrous solar cells thereby
CN107039554A (en) A kind of cadmium telluride diaphragm solar battery and preparation method
CN208781890U (en) Ordered heterojunction photovoltaic device
CN204315606U (en) Double heterojunction double-sided solar battery
CN101262019B (en) Photoelectrical chemical solar battery for silicon nano line
CN105720199A (en) Large-area organic thin-film solar battery and preparation method thereof
CN206460967U (en) A kind of cadmium telluride diaphragm solar battery
CN206758471U (en) A kind of perovskite solar cell
CN111180588B (en) Thick-film organic solar cell based on continuous blade coating double-body heterojunction and preparation method thereof
CN204927356U (en) Improvement type nano - zinc oxide piece array perovskite type solar cell

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant