CN102437186A - Device structure beneficial to elimination of inverted U-shaped nickel silicide and preparation process thereof - Google Patents
Device structure beneficial to elimination of inverted U-shaped nickel silicide and preparation process thereof Download PDFInfo
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- CN102437186A CN102437186A CN201110222302XA CN201110222302A CN102437186A CN 102437186 A CN102437186 A CN 102437186A CN 201110222302X A CN201110222302X A CN 201110222302XA CN 201110222302 A CN201110222302 A CN 201110222302A CN 102437186 A CN102437186 A CN 102437186A
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Abstract
The invention discloses a device structure beneficial to elimination of inverted U-shaped nickel silicide. The device structure comprises a silicon substrate, wherein a gate oxidation layer retaining structure is formed on the silicon substrate; a sample gate structure is formed on the gate oxidation layer retaining structure; and the top of the sample gate structure is provided with a groove. Through the device structure beneficial to elimination of inverted U-shaped nickel silicide and a preparation process thereof, a gate cutting angle caused by dry method etching used in a side wall preparation process and cavities generated in the process of integrating oxides between the gate and the side wall are effectively avoided, and then the finally formed gate nickel silicide is prevented from generating an inverted U shape. The process is simple and easy to control.
Description
Technical field
The present invention relates to the semiconductor fabrication technical field, relate to a kind of device architecture and preparation technology thereof who helps to eliminate inverted U-shaped nickel silicide specifically.
Background technology
In semi-conductive production technology; Around grid structure, generally all can relate to the side wall moulding process; Generally be used for all around gate structure through the formed side wall of side wall moulding process; Preventing more heavy dose of source/too approaching raceway groove of leakages injection, thereby cause the generation of source/leakage punch through.
But the dry etching that is adopted in the side wall moulding process is easy to cause the grid top rake, because the existence of grid top rake; Make the nickel of follow-up deposit on grid also can appear inverted U-shaped; Therefore cause in the process of integrating, to form certain cavity, and in fact when nickel and pasc reaction generation nickel silicide, nickel is a side who moves at the oxide between the side wall of follow-up grid and all around gate; Therefore, be easy to cause the final grid nickel silicide that forms to appear inverted U-shaped.
Summary of the invention
The object of the present invention is to provide a kind of device architecture and preparation technology thereof who helps to eliminate inverted U-shaped nickel silicide, the top rake of the grid structure that dry etching caused that it can effectively avoid in side wall forms technology, being adopted and the grid nickel silicide that is therefore caused appear inverted U-shaped.
For solving above-mentioned purpose, technical scheme provided by the present invention is:
A kind of device architecture that helps to eliminate the inverted U nickel silicide; Wherein, comprise a silicon substrate, be formed with gate oxide on the said silicon substrate and keep structure; Be formed with a sample grid structure on the described gate oxide reservation structure, the top of described sample grid structure respectively has a groove.
A kind of preparation technology who helps to eliminate the device architecture of inverted U nickel silicide wherein, comprises the steps:
Step S1: a silicon substrate is provided, on the said silicon substrate under deposit gate oxide, polysilicon layer, oxide skin(coating), amorphous carbon layer successively, and on said amorphous carbon layer, apply one deck photoresist;
Step S2: carry out photoetching process, form the opening that is arranged in said photoresist layer;
Step S3: with said photoresist is mask; Through the said amorphous carbon layer of said opening etching successively, said oxide skin(coating) and said polysilicon layer; Formation is arranged in the through hole of said amorphous carbon layer, the groove that is positioned at the through hole of said oxide skin(coating) and is positioned at said polysilicon layer respectively, and removes said photoresist;
Step S4: adopt the said amorphous carbon layer of dry etching etching, when making the thickness of said amorphous carbon layer reduce, enlarge the through hole that is arranged in said amorphous carbon layer;
Step S5: fill oxide in through hole in the through hole in said amorphous carbon layer, the said oxide skin(coating) and the groove in the said polysilicon layer;
Step S6: remove said amorphous carbon layer;
Step S7: with form among the step S5 to be arranged in the oxide that said amorphous carbon layer fills be mask; Said oxide skin(coating) of etching and said polysilicon layer successively; Form said sample grid structure and keep structure with the oxide skin(coating) that is positioned on the said sample grid structure; And remove the oxide in the former through hole that is filled in said amorphous carbon layer, keep the through hole that is filled in the said oxide skin(coating) and the oxide in the groove in the said polysilicon layer;
Step S8: remove said oxide skin(coating) and keep structure and the through hole and the oxide in the groove in the said polysilicon layer that are filled in the former said oxide skin(coating); And be the said gate oxide of mask etching with said sample grid structure, form the said sample grid structure that has groove and keep structure with the gate oxide that is positioned under the said sample grid structure.
Above-mentioned preparation technology wherein, removes said photoresist through ashing method in said step S3.
Above-mentioned preparation technology wherein, adopts the said amorphous carbon layer of dry etching etching, said oxide skin(coating) and the said polysilicon layer of isotropic in said step S3.
Above-mentioned preparation technology wherein, removes said amorphous carbon layer through ashing method in said step S6.
A kind of device architecture and preparation technology thereof who helps to eliminate inverted U-shaped nickel silicide of the present invention; The cavity that the grid top rake that dry etching caused that can effectively avoid in side wall preparation technology, being adopted and the oxide between grid and side wall are produced in integration process; And then can avoid the grid nickel silicide generation of final molding inverted U-shaped, technical process is simple and easy to control.
Description of drawings
Fig. 1 is a kind of structural representation that helps to eliminate the device architecture of inverted U-shaped nickel silicide of the present invention;
Fig. 2 is the preparation technology's of of the present invention a kind of device architecture that helps to eliminate inverted U-shaped nickel silicide shown in Figure 1 flow chart;
Fig. 2 A-2H is the cross-sectional view of the formed device architecture of each step in preparation technology's the flow chart of of the present invention a kind of device architecture that helps to eliminate inverted U-shaped nickel silicide shown in Figure 2.
Embodiment
Come a kind of device architecture and preparation technology thereof of eliminating inverted U-shaped nickel silicide of helping of the present invention done explanation in further detail below in conjunction with Figure of description and embodiment.
As shown in Figure 1; A kind of device architecture that helps to eliminate inverted U-shaped nickel silicide of the present invention; Comprise a silicon substrate 110; On silicon substrate 110, be formed with two sample grid structure 130a and 130b, between two sample grid structure 130a and 130b and silicon substrate 110, be formed with gate oxide respectively and keep structure 120a and 120b, sample grid structure 130 ' and 130 " the top respectively have a groove 130a and 130b.
A kind of preparation technology who helps to eliminate the device architecture of inverted U nickel silicide wherein, comprises the steps:
Step S1 a: silicon substrate 110 is provided, on silicon substrate 110, deposits gate oxide 120, polysilicon layer 130, oxide skin(coating) 140, amorphous carbon layer 150 from top to bottom successively, and on amorphous carbon layer 150, apply one deck photoresist 160;
Step S2: carry out photoetching process, form the opening 160a and the 160b that are arranged in photoresist 160;
Step S3: with photoresist 160 is mask; Adopt isotropic dry etching through opening 160a and 160b etching amorphous carbon layer 150, oxide skin(coating) 140 and polysilicon layer 130 successively; Form groove 130a and the 130b that is arranged in the through hole 150a and the 150b of amorphous carbon layer 150, the through hole 140a that is arranged in oxide skin(coating) 140 and 140b and is arranged in polysilicon layer 130 respectively, and remove photoresist 160 with ashing method;
Step S4: adopt dry etching etching amorphous carbon layer 150, when making the thickness of amorphous carbon layer 150 reduce, enlarge the through hole 150a and the 150b that are arranged in amorphous carbon layer 150, also promptly form through hole 150c and the 150d that is arranged in amorphous carbon layer 150;
Step S5: fill oxide among groove 130a in through hole 140a in through hole 150c in amorphous carbon layer 150 and 150d, the oxide skin(coating) 140 and 140b and the polysilicon layer 130 and the 130b forms oxide interstitital texture 1501 and 1502;
Step S6: remove amorphous carbon layer 150 with ashing method;
Step S7: be mask with oxide interstitital texture 1501 and 1502 respectively; Etching oxide layer 140 and polysilicon layer 130 successively; Form sample grid structure 130 ' and 130 " and be positioned at sample grid structure 130 ' and 130 " on oxide skin(coating) reservation structure 140c, 140d, 140e and 140f; And remove the former through hole 150c of amorphous carbon layer 150 and the oxide of 150d of being arranged in of oxide interstitital texture 1501 and 1502, the oxide of filling among through hole 140a in reservationization thing interstitital texture 1501 and 1502 the primary oxide layer 140 and the 140b and the oxide of groove 130a in the polysilicon layer 130 and the filling among the 130b;
Step S8: remove oxide skin(coating) and keep the oxide of filling among the oxide of filling among through hole 140a and the 140b in structure 140c, 140d, 140e and 140f, the primary oxide layer 140 and groove 130a in the polysilicon layer 130 and the 130b; And with sample grid structure 130 ' and 130 " be mask etching gate oxide 120, thereby form the sample grid structure 130 ' and 130 have groove 130a and 130b " and be positioned at said sample grid structure 130 ' and 130 " and silicon substrate 110 between gate oxide reservation structure 120a and 120b.
In sum; A kind of device architecture and preparation technology thereof who helps to eliminate inverted U-shaped nickel silicide of the present invention; The cavity that the grid top rake that dry etching caused that can effectively avoid in side wall preparation technology, being adopted and the oxide between grid and side wall are produced in integration process; And then can avoid the grid nickel silicide generation of final molding inverted U-shaped, technical process is simple and easy to control, is suitable for penetration and promotion and is suitable for.
Should be pointed out that foregoing is enumerating of specific embodiment of the present invention, equipment of wherein not describing in detail to the greatest extent and structure are construed as with the common mode in this area to be implemented; And above-mentioned specific embodiment is not to be used for limiting practical range of the present invention, and promptly all equivalent transformation and modifications of doing according to content of the patent of the present invention all fall into protection scope of the present invention.
Claims (5)
1. device architecture that helps to eliminate the inverted U nickel silicide; It is characterized in that, comprise a silicon substrate, form gate oxide on the said silicon substrate and keep structure; Be formed with sample grid structure on the described gate oxide reservation structure, the top of said sample grid structure respectively has a groove.
2. a preparation technology who helps to eliminate the device architecture of inverted U nickel silicide as claimed in claim 1 is characterized in that, comprises the steps:
Step S1 a: silicon substrate is provided, on said silicon substrate, deposits gate oxide, polysilicon layer, oxide skin(coating), amorphous carbon layer from bottom to up successively, and on said amorphous carbon layer, apply one deck photoresist;
Step S2: carry out photoetching process, form the opening that is arranged in said photoresist layer;
Step S3: with said photoresist is mask; Through the said amorphous carbon layer of said opening etching successively, said oxide skin(coating) and said polysilicon layer; Formation is arranged in the through hole of said amorphous carbon layer, the groove that is positioned at the through hole of said oxide skin(coating) and is positioned at said polysilicon layer respectively, and removes said photoresist;
Step S4: adopt the said amorphous carbon layer of dry etching etching, when making the thickness of said amorphous carbon layer reduce, enlarge the through hole that is arranged in said amorphous carbon layer;
Step S5: fill oxide in through hole in the through hole in said amorphous carbon layer, the said oxide skin(coating) and the groove in the said polysilicon layer;
Step S6: remove said amorphous carbon layer;
Step S7: with form among the step S5 to be arranged in the oxide that said amorphous carbon layer fills be mask; Said oxide skin(coating) of etching and said polysilicon layer successively; Form said sample grid structure and keep structure with the oxide skin(coating) that is positioned on the said sample grid structure; And remove the oxide in the former through hole that is filled in said amorphous carbon layer, keep the through hole that is filled in the said oxide skin(coating) and the oxide in the groove in the said polysilicon layer;
Step S8: remove said oxide skin(coating) and keep structure and the through hole and the oxide in the groove in the said polysilicon layer that are filled in the former said oxide skin(coating); And be the said gate oxide of mask etching with said sample grid structure, form said sample grid structure and the gate oxide between said sample grid structure and said silicon substrate that has groove and keep structure.
3. preparation technology as claimed in claim 2 is characterized in that, in said step S3, removes said photoresist through ashing method.
4. preparation technology as claimed in claim 2 is characterized in that, in said step S3, adopts the said amorphous carbon layer of dry etching etching, said oxide skin(coating) and the said polysilicon layer of isotropic.
5. preparation technology as claimed in claim 2 is characterized in that, in said step S6, removes said amorphous carbon layer through ashing method.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201110222302.XA CN102437186B (en) | 2011-08-04 | 2011-08-04 | Device structure beneficial to elimination of inverted U-shaped nickel silicide and preparation process thereof |
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| CN201110222302.XA CN102437186B (en) | 2011-08-04 | 2011-08-04 | Device structure beneficial to elimination of inverted U-shaped nickel silicide and preparation process thereof |
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| CN102437186B CN102437186B (en) | 2014-09-03 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102569052A (en) * | 2011-11-11 | 2012-07-11 | 上海华力微电子有限公司 | Device structure conducive to eliminating U-shaped nickel silicide and corresponding technology thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1319881A (en) * | 2000-03-09 | 2001-10-31 | 三星电子株式会社 | Method for forming self-aligning contact welding disc in metal inlay grid technology |
| JP2005019892A (en) * | 2003-06-27 | 2005-01-20 | Semiconductor Leading Edge Technologies Inc | Semiconductor device and manufacturing method therefor |
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- 2011-08-04 CN CN201110222302.XA patent/CN102437186B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1319881A (en) * | 2000-03-09 | 2001-10-31 | 三星电子株式会社 | Method for forming self-aligning contact welding disc in metal inlay grid technology |
| JP2005019892A (en) * | 2003-06-27 | 2005-01-20 | Semiconductor Leading Edge Technologies Inc | Semiconductor device and manufacturing method therefor |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102569052A (en) * | 2011-11-11 | 2012-07-11 | 上海华力微电子有限公司 | Device structure conducive to eliminating U-shaped nickel silicide and corresponding technology thereof |
| CN102569052B (en) * | 2011-11-11 | 2015-06-17 | 上海华力微电子有限公司 | Device structure conducive to eliminating U-shaped nickel silicide and corresponding technology thereof |
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| CN102437186B (en) | 2014-09-03 |
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