CN102437170A - Blue-light-excited TFT (thin film transistor)-LED (light emitting diode) array display substrate and manufacturing method thereof - Google Patents

Blue-light-excited TFT (thin film transistor)-LED (light emitting diode) array display substrate and manufacturing method thereof Download PDF

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CN102437170A
CN102437170A CN2011103674943A CN201110367494A CN102437170A CN 102437170 A CN102437170 A CN 102437170A CN 2011103674943 A CN2011103674943 A CN 2011103674943A CN 201110367494 A CN201110367494 A CN 201110367494A CN 102437170 A CN102437170 A CN 102437170A
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tft
layer
lead
blue
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CN102437170B (en
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邓朝勇
杨利忠
胡绍璐
杨小平
雷远清
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Guizhou University
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Guizhou University
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Abstract

The invention discloses a blue-light-excited TFT (thin film transistor)-LED (light emitting diode) array display substrate and a manufacturing method thereof. A semiconductor integrating technique is utilized to integrate double TFTs and a blue LED unit on one substrate; blue-light-excited fluorescent powder is utilized to implement white light emission; and a color film technology is utilized to implement blue-light-excited TFT-LED array display. Two TFTs and a capacitor are integrated on each isolated light-emitting array unit as a control circuit of the light emitting unit; a fluorescent powder layer is covered on the array substrate, and a color film substrate matched with the array substrate is covered on the fluorescent powder layer; or the fluorescent powder layer and the color film substrate are integrated, and the color film substrate is directly covered on the array substrate. The substrate disclosed by the invention can overcome the defects in the existing LED and LCD (liquid crystal display) display to some extent, and greatly enhance the display quality and display effect; and the manufacturing method is compatible with the existing semiconductor technique, and can easily implement industrialization.

Description

A kind of blue-light excited TFT-LED array display base plate and manufacturing approach thereof
Technical field
The present invention relates to a kind of led array display base plate and manufacturing approach thereof, relate in particular to a kind of blue-light excited TFT-LED array display substrate structure and manufacturing approach thereof.
Background technology
The continuous improvement of Along with people's material and cultural life, people are also increasingly high to the requirement of Display Technique.Aspect development such as Display Technique is progressively little, in light weight towards panelized, volume, power consumptive province.Advantage has obtained development rapidly to LCD owing to having that volume is little, radiation is little and low in energy consumption etc., becomes the main flow of current Display Technique, in many applications, is progressively replacing traditional CRT Display Technique.But the response speed of LCD is relatively slow, also exists a lot of not enough in the color rendition.Along with the nineties in last century is the making success of the blue-ray LED of luminescent material with GaN, and it is white luminous that blue-ray LED excites yellow fluorescent powder to realize, this provides good basis for the LED color display technology.LED has the luminous efficiency height, color rendering is good and advantage such as energy savings, uses widely obtaining aspect the present large scale display.Present light-emitting diode display mainly is spliced by the monochromatic LED unit, has that power consumption is few, brightness is high, operating voltage is low, driving is simple, the life-span is long, response speed is fast and steady performance.But there are deficiencies such as resolution is low, color uniformity is poor, volume is big in the light-emitting diode display that the splicing form that adopts at present forms; The harmony of the different splicing parts of light-emitting diode display and consistency are difficult to guarantee; Cost of manufacture is higher relatively; High power device heat dissipation design difficulty is only applicable to problems such as large scale display, has limited further developing of splicing LED chromogenic device.
Summary of the invention
The invention provides a kind of blue-light excited TFT-LED array display base plate and manufacturing approach thereof; It is made, and the light-emitting diode display resolution that obtains is high, volume is little, radiating effect is good; Can realize very color and the small screen demonstration, and have the not available advantage of other display modes.
A kind of blue-light excited TFT-LED array display base plate provided by the invention comprises substrate, above substrate, is followed successively by resilient coating and n type GaN layer; On n type GaN layer is blue light-emitting layer, on blue light-emitting layer, is followed successively by p type GaN layer and transparent electrode layer; N type GaN layer, blue light-emitting layer, p type GaN layer and transparent electrode layer are formed display unit jointly, on display unit, are provided with the controlled area, between display unit, are provided with lead district; In the controlled area, be provided with by capacitor bottom crown and capacitor top crown, and be in the capacitor that insulating barrier constituted between them together; The work TFT that forms by work TFT grid, work TFT raceway groove, work TFT source electrode, work TFT drain electrode and intermediate insulating layer; And by controlling the control TFT that TFT grid, control TFT raceway groove, control TFT source electrode and control TFT drain electrode and intermediate insulating layer are formed; In lead district, be provided with n type GaN layer ground lead, work TFT source lead, control TFT source lead and control TFT grid lead; Wherein the capacitor bottom crown contacts with n type GaN layer, and n type GaN layer ground lead is connected with the capacitor bottom crown; The capacitor top crown is connected with work TFT grid and control TFT drain electrode respectively; Work TFT drain electrode is connected with transparent electrode layer; Work TFT source electrode is connected with work TFT source lead, and control TFT source electrode is connected with control TFT source lead, and control TFT grid is connected with control TFT grid lead; Insulating barrier is between each layer metal electrode and the different layers lead-in wire, and the passivation protection layer is arranged on controlled area and lead district; Above transparent electrode layer, cover phosphor powder layer, above phosphor powder layer, cover supporting color membrane substrates; It perhaps is the structure that phosphor powder layer and color membrane substrates become one.During concrete the making,, directly color membrane substrates is covered on the transparent electrode layer then the certain thickness phosphor powder layer of the inboard coating of the color cell of each color film.
Above array base palte, be coated with phosphor powder layer, the selection of phosphor material powder need be satisfied blue-ray LED and excite, the light that is sent through with the blue light colour mixture after obtain the requirement of white light.On phosphor powder layer, be coated with color membrane substrates, the requirement that color cell distribution on the color membrane substrates and light transmittance will meet the plain unit of colored display object, the size of color cell and shape need be complementary with the array element on the LED substrate.In addition; Also can integrate phosphor powder layer and color membrane substrates; At the certain thickness phosphor powder layer of the inboard coating of the color cell of each color film, directly color membrane substrates is covered on the array base palte then, thereby avoid phosphor powder layer directly is coated on the led array substrate.
Backing material can be sapphire single-crystal substrate or SiC single crystalline substrate.N type semiconductor layer and p type semiconductor layer are made up of the p type or the n type GaN epitaxial film of different levels of doping, and wherein the n type semiconductor layer can be mixed Si, and the p type semiconductor layer can be mixed Mg, Zn etc.
Blue light-emitting layer is formed light emitting array, and the luminescent layer of each light emitting array is the InGaN of individual layer or the InGaN layer and the GaN layer of multilayer, forms multiple quantum well layer.Transparent electrode layer is ITO, IZO or the kin transparent electrode material of growth in situ.
Capacitor bottom crown, top crown; Work TFT grid, work TFT drain electrode, work TFT source electrode; The material of control TFT grid, control TFT drain electrode, control TFT source electrode and various lead-in wires is the alloy of one or more compositions in the metals such as Mo, Au, Cu, Ag, Ni or Al, perhaps their collocation or combination.Insulating barrier and passivation protection layer can adopt SiO x, SiN xOr SiO xN yDeng insulating material.Work TFT raceway groove adopts amorphous silicon (a-Si), polysilicon (poly-Si) or monocrystalline silicon semi-conducting materials such as (Si) with control TFT channel layer.
Phosphor powder layer adopts yttrium-aluminium-garnet yellow-green fluorescence powder YAG:Ce 3+, or YAG:Ce 3+With tungstate red fluorescent powder SrWO 4: Eu 3+Collocation, or the blue-light excited light that is sent down through with the blue light colour mixture after obtain other fluorescent material of white light.
Color membrane substrates comprises red resin, green resin and blue resins, and other assemblies relevant with color film.
The present invention also provides a kind of manufacturing approach of blue-light excited TFT-LED array display base plate simultaneously, may further comprise the steps:
Step 1, on substrate base, utilize mocvd method to deposit resilient coating successively, n type GaN layer;
Step 2, on n type GaN layer, adopt the mocvd method blue InGaN luminescent layer of growing;
Step 3, on blue light-emitting layer, adopt mocvd method to deposit p type GaN layer;
Step 4, on p type GaN layer, adopt magnetron sputtering method deposit transparent electrode layer;
Step 5, on the basis of step 4, carry out photoetching and etching, etching depth surpasses blue light-emitting layer, wears n type GaN layer but must not carve, and the zone that is etched forms controlled area and lead district, and the zone that is not etched forms the luminous zone, and they form array of display jointly;
Step 6, on controlled area and lead district, adopt magnetron sputtering method to deposit the metal level I, the metal level I is carried out photoetching and etching, make the metal level I shape layer capacitor bottom crown of controlled area, make the metal level I of lead district form n type GaN layer ground lead;
Step 7, on controlled area and lead district, adopt PECVD method depositing insulating layer; On insulating barrier, adopt magnetron sputtering method to deposit the metal level II then; After the metal level II carried out photoetching and etching; Metal level II on the controlled area has formed capacitor top crown, the work TFT grid that is connected with the capacitor top crown and control TFT grid respectively, and the metal level II on lead district has formed control TFT grid lead;
Step 8, on the step 7 basis, adopt the PECVD method to deposit insulating barrier; Adopt the PECVD method on insulating barrier, to deposit the a-Si active layer again, and carry out photoetching and etching, form work TFT and control TFT channel part respectively.Simultaneously; Above work TFT grid lead end, form the via hole of a size appropriateness in the insulating barrier; Expose the terminal part of work TFT grid lead; Supply to control in the next step TFT drain electrode and be connected, come Control work TFT switching purposes with the switch that reaches through control TFT with work TFT grid;
Step 9, on the step 8 basis; Adopt magnetron sputtering method to deposit the metal level III; And the metal level III carried out photoetching and etching; Metal level III on the controlled area forms work TFT drain electrode, the work TFT source electrode that is connected with transparent electrode layer respectively; And the control TFT drain electrode that is connected with work TFT grid through via hole; And control TFT source electrode, the metal level on lead district
Figure 2011103674943100002DEST_PATH_IMAGE001
has formed control TFT source lead;
Step 10, employing PECVD method depositing insulating layer, and, in the insulating barrier at work TFT source electrode top, form a via hole through photoetching and etching, so that work TFT source electrode is connected with lead wire circuit; Adopt magnetron sputtering method to deposit the metal level IV, and carry out photoetching and etching, form the work TFT source lead that is connected with work TFT source electrode;
Step 11, employing PECVD method deposit the passivation protection layer, to controlled area and lead district circuit and relevant portion formation protection.Carry out photoetching and etching, form the pad circuit part of substrate,, keep the complete sum cleaning of light-emitting zone simultaneously so that be connected with external circuit.
Step 12, above array base palte, cover phosphor powder layer, above phosphor powder layer, cover and the supporting color membrane substrates of array base palte.Also can integrate phosphor powder layer and color membrane substrates; At the certain thickness phosphor powder layer of the inboard coating of the color cell of each color film; Directly color membrane substrates is covered on the array base palte then, thereby avoid phosphor powder layer directly is coated on the led array substrate.
Blue light-emitting layer is formed light emitting array, and the luminescent layer of each light emitting array is the blue light-emitting layer InGaN of individual layer or the InGaN layer and the GaN layer of multilayer, forms the multiple quantum well layer blue light-emitting layer.
N type GaN layer, blue light-emitting layer and p type GaN layer adopt MOCVD (metallo-organic compound gas deposition) technology, perhaps adopt the preparation of MBE (molecular beam epitaxy) method.
Photoetching technique adopts the universal method that adopts on the semiconductor technology, and the combination of carving (as strengthening plasma etching, reactive ion etching etc.), wet quarter or above method is done in the lithographic method employing
Adopt method growth transparent electrode layer, metal level I, metal level II, metal level
Figure 195974DEST_PATH_IMAGE001
and the metal level IV of magnetron sputtering or electron beam evaporation; Insulating barrier, a-Si active layer and passivation protection layer adopt PECVD (plasma enhanced chemical vapor deposition) method to deposit, and the active layer of polysilicon or monocrystalline silicon need adopt the more complicated technology growth of ratio PECVD that combines with heat treatment phase.
Resilient coating and n type GaN layer that the present invention adopts mocvd method on the large tracts of land single crystalline substrate, to deposit to have complete structure equally; And on n type GaN layer through MOCVD technology growth blue led luminescent layer; The preparation of p type GaN layer and transparent electrode layer; The utilization lithographic technique is separated into array of display with blue light-emitting layer, p type GaN layer and transparent electrode layer, on the light emitting array unit that each isolates out through integrated two TFT and capacitor control circuit as this luminescence unit.Therefore the volume of each pixel luminescence unit can be little more a lot of than the single led luminescence unit of existing LED large scale display, and the pixel unit sizableness with present LCD shows can improve the resolution of demonstration greatly, thereby can improve display quality greatly.In addition, n type GaN layer is an en-block construction, on n type GaN layer, connects metal lead wire, in lead district metal lead wire is arranged also, thereby can improve the heat dissipation problem of product greatly.Production technology and existing semiconductor technology are compatible, and when being easy to extensive industrialization, properties of product increase substantially.
The operation principle of the blue-light excited TFT-LED array of the present invention display base plate is: TFT-LED color array display base plate comprises a capacitor, a work TFT and a control TFT; Work TFT source electrode is connected with driving power through work TFT source lead; Control TFT grid is connected with sweep signal through control TFT grid lead; Control TFT source electrode is connected with data-signal through control TFT source lead; The capacitor infrabasal plate is connected with n type layer with LED, and is connected with ground lead; When control TFT grid lead had sweep signal, control TFT was in opening, and data-signal is sent to work TFT grid through control TFT source electrode, and was the capacitor charging.The outer driving voltage of supposing work TFT is constant, and works in the above non-saturated region of cut-ff voltage, and the size of work TFT drain current is by the decision of work TFT grid voltage; When control TFT grid lead does not have sweep signal; Control TFT is in cut-off state; The electric charge that is stored in the capacitor still can be kept the voltage of work TFT grid and keep constant; The work TFT of making is in opening, has so just guaranteed in entire frame in the cycle, and LED has constant electric current to be passed through.This circuit is through the voltage of the voltage data signal change work TFT grid on the control TFT source lead, and control flows is crossed the electric current of work TFT, thereby has controlled the electric current that flows through LED, reaches the purpose of control LED luminosity.
Owing to adopted above-mentioned technical scheme; Compared with prior art; The present invention adopts a kind of new way; Adopt the semiconductor integrated technique, luminescence unit (LED unit) and luminous control unit (TFT unit) are integrated on the underlay substrate complete on the same substrate jointly, thereby constitute the array of display substrate.According to the needs that show, the state of each luminescence unit is controlled by corresponding control unit with it, and promptly the on off state of each array light-emitting unit can be regulated through the control unit that is connected with circuit with bright degree (gray scale).In order to realize colored the demonstration, the high-quality fluorescent material that at first outside the blue-light LED chip array, applies suitable kind is (like yttrium-aluminium-garnet yellow-green fluorescence powder YAG:Ce 3+, or YAG:Ce 3+With tungstate red fluorescent powder SrWO 4: Eu 3+Collocation), thus realize white luminous after the blue-light excited fluorescent material colour mixture of sending through LED.It is luminous that the blue light (centre wavelength roughly is positioned at about 450-480nm) that InGaN blue-light LED chip unit sends is used for excitated fluorescent powder, and the green-yellow light that fluorescent material sends is (like YAG:Ce 3+, the about 550nm of centre wavelength) and ruddiness (like SrWO 4: Eu 3+, the about 613nm of centre wavelength) and send out residue blue light formation white light with LED.On white luminous basis, through matching, select color film (Color Filter) substrate corresponding, thereby white light is reduced into the needed Red of demonstration with the led array substrate with color membrane technology.The requirement that color cell distribution on the color membrane substrates and light transmittance will meet the plain unit of colored display object.Under the cooperation of control unit, thereby realize colored the demonstration.The light-emitting diode display resolution of making like this is high, volume is little, radiating effect is good; Can realize very color and the small screen demonstration; Be suitable for environment such as family and office, can have effectively overcome the deficiency of existing splicing light-emitting diode display and TFT-LCD, and have the not available advantage of other display modes.Preparation method of the present invention and conventional semiconductor process compatible, when being easy to extensive industrialization, properties of product increase substantially simultaneously.
Description of drawings
Fig. 1 is a structural representation of the present invention;
Fig. 2 is sapphire Al 2O 3(0001) sectional view behind epitaxial growth buffer and the n-GaN layer on the face substrate;
Fig. 3 is the sectional view behind the growth blue light-emitting layer on the n-GaN layer;
Fig. 4 is the sectional view behind growth p-GaN layer on the blue light-emitting layer;
Fig. 5 is the sectional view after growth transparency electrode on the p-GaN layer;
Fig. 6 is the plane graph after etching on Fig. 5 basis forms controlled area and lead district;
Fig. 7 is the sectional view in corresponding A among Fig. 6-A cross section;
Fig. 8 is the plane graph that depositing metal layers
Figure 591183DEST_PATH_IMAGE002
back etching forms capacitor bottom crown and n type GaN layer ground lead;
Fig. 9 is the sectional view in corresponding A among Fig. 8-A cross section;
After Figure 10 is depositing metal layers
Figure 2011103674943100002DEST_PATH_IMAGE003
; Etching forms capacitor top crown, the work TFT grid that is connected with the capacitor top crown and control TFT grid, and the plane graph after forming control TFT grid lead on the lead district;
Figure 11 is the sectional view in corresponding A among Figure 10-A cross section;
Figure 12 carries out photoetching and etching for depositing the a-Si active layer, forms work TFT raceway groove and control TFT raceway groove, and the plane graph after forming the terminal via hole of work TFT grid lead on the gate insulation layer;
Figure 13 is the sectional view in corresponding A among Figure 12-A cross section;
Figure 14 is the sectional view in corresponding B-B cross section among Figure 12;
Figure 15 is the sectional view in corresponding C-C cross section among Figure 12;
Figure 16 is the depositing metal layers III, and carries out photoetching and etching, the plane graph after source, drain electrode and the control TFT source lead of the source of formation work TFT, drain electrode, control TFT;
Figure 17 is the sectional view in middle corresponding A-A cross section of Figure 16;
Figure 18 is the sectional view in the middle corresponding B-B cross section of Figure 16;
Figure 19 is the sectional view in the middle corresponding C-C cross section of Figure 16;
Figure 20 is the depositing metal layers IV, carries out photoetching and etching, forms the plane graph of work TFT source lead;
Figure 21 is the plane graph behind the growth passivation protection layer;
Figure 22 is the sectional view in corresponding A among Figure 21-A cross section;
Figure 23 is the sectional view in corresponding B-B cross section among Figure 21;
Figure 24 is the sectional view in corresponding C-C cross section among Figure 21.
Reference numeral
1, substrate;
2, resilient coating;
3, n type GaN layer;
4, luminescent layer;
5, p type GaN layer;
6, transparent electrode layer;
7, controlled area;
8, lead district;
9, luminous zone;
10, capacitor bottom crown;
11, n electrode grounding lead-in wire;
12, capacitor top crown;
13, work TFT grid;
14, work TFT grid lead;
15, control TFT grid;
16, control TFT grid lead;
17, work TFT raceway groove;
18, control TFT raceway groove;
19, control TFT source electrode;
20, control TFT source lead;
21, control TFT drain electrode;
22, work TFT source electrode;
23, work TFT drain electrode;
24, work TFT source lead;
25, insulating barrier;
26, passivation protection layer.
Embodiment
A kind of blue-light excited TFT-LED array display substrate structure of the present invention is shown in figure 24, above substrate 1, is followed successively by resilient coating 2 and n type GaN layer 3; On n type GaN layer 3 is blue light-emitting layer 4, on blue light-emitting layer, is followed successively by p type GaN layer 5 and transparent electrode layer 6.N type GaN layer 3, blue light-emitting layer 4, p type GaN layer 5 and the transparent electrode layer 6 common display units of forming are provided with controlled area 7 on display unit, between display unit, be provided with lead district 8.In controlled area 7, be provided with by capacitor bottom crown 10 and capacitor top crown 12, and be in the capacitor that the insulating barrier 25 of bottom crown between them constituted together.The work TFT that forms by work TFT grid 13, work TFT raceway groove 17, work TFT source electrode 22, work TFT drain electrode 23 and intermediate insulating layer 25; And by controlling the control TFT that TFT grid 15, control TFT raceway groove 18, control TFT source electrode 19 and control TFT drain electrode 21 and intermediate insulating layer 25 are formed.In lead district, be provided with n type GaN layer ground lead 11, work TFT source lead 24, control TFT source lead 20 and control TFT grid lead 16.Wherein capacitor bottom crown 10 well contacts with n type GaN layer 3, and ground lead 11 is the extension of capacitor bottom crown 10; Capacitor top crown 12 is connected with work TFT grid 13 and control TFT drain electrode 21 respectively; Work TFT drain electrode 23 is connected with transparent electrode layer 6; Work TFT source electrode 22 is connected with work TFT source lead 24; Control TFT source electrode 19 is connected with control TFT source lead 20, and control TFT grid 15 is connected with control TFT grid lead 16.Between each layer metal electrode and different layers lead-in wire, insulating barrier 25 is arranged, on controlled area 7 and lead district 8, passivation protection layer 26 is arranged.Above array base palte, cover phosphor powder layer, above phosphor powder layer, cover and the supporting color membrane substrates of array base palte.(perhaps can integrate phosphor powder layer and color membrane substrates; At the certain thickness phosphor powder layer of the inboard coating of the color cell of each color film; Directly color membrane substrates is covered on the array base palte then, thereby avoid phosphor powder layer directly is coated on the led array substrate.）
The gallium source of MOCVD method is TMGa (trimethyl gallium) among the present invention, and nitrogenous source is NH 3(ammonia), indium source are TMIn (trimethyl indium), and the aluminium source is TMAl (trimethyl aluminium), and the magnesium source is that TMMg (trimethyl magnesium), silicon source are SiH 4(silane).
Below be the manufacturing approach of the blue-light excited TFT-LED array of this embodiment display base plate, it comprises following key step:
Step 1, the large-area monoblock sapphire single-crystal of employing are put into MOCVD equipment as substrate 1 with substrate 1, feed H earlier 2Be heated to 1100 ℃ of baking 20min under the atmosphere; Feed nitrogen carries out 100s to substrate nitrogen treatment down at 800 ℃ then; Handle the back and feed NH 3(ammonia) and TMAl (trimethyl aluminium), vapor phase epitaxial growth thickness is the AlN resilient coating of 80nm on substrate under 800 ℃ condition, feeds the GaN resilient coating that TMGa (trimethyl gallium) and ammonia are 200nm at 600 ℃ of following growth thickness then; AlN resilient coating, GaN resilient coating are formed resilient coating 2 jointly; Under 600 ℃ condition, feed SiH 4(silane) growth thickness on resilient coating 2 is the n type GaN layer 3 of 2um, and is as shown in Figure 2;
Step 2, under 600 ℃ condition; Growth thickness is the GaN layer of 50nm on n type GaN layer 3, at 550 ℃ of following growth thickness blue-ray LED luminescent layer that is 5nm, at 600 ℃ of following growth thickness GaN layer that is 60nm; At 650 ℃ of following growth thickness blue-ray LED luminescent layer that is 5nm; Repeat above step 5-6 time, promptly formed the blue-ray LED luminescent layer 4 of multi-quantum pit structure, as shown in Figure 3;
Step 3, on blue light-emitting layer 4, feeding the p type GaN layer 5 that TMMg (trimethyl magnesium) growth thickness is 120nm under 650 ℃ the condition, annealing is 1 hour under 600 ℃ condition, and uses H 2SO 4Solution, H 2O 2Solution, hydrofluoric acid solution, hydrochloric acid, NH 4Combination ultrasonic cleaning technologies such as OH are removed the organic impurities and the metal ion on said LED epitaxial wafer surface, and are as shown in Figure 4;
Step 4, adopt magnetron sputtering method on p type GaN layer 5, to deposit the ito transparent electrode layer 6 that a layer thickness is 200nm at the luminescent layer top, as shown in Figure 5;
Step 5, on ITO, apply photoresist, through exposure with develop, expose the controlled area 7 and the lead district 8 that need etching; The wet then etching of carrying out of carving and do the method that combines quarter, etching depth should guarantee that n type GaN layer 2 is exposed, but can not n type GaN layer 2 be penetrated; After being etched the zone form controlled area 7 and lead district 8; The zone that is not etched then forms the luminous zone, and they form array of display jointly, like Fig. 6, shown in Figure 7;
Step 6, substrate cleaned after, adopt magnetron sputtering method in the controlled area 7 with lead district 8 depositing metal layers I; After cleaning, resist coating carries out photoetching and etching to the metal level I of controlled area 7 and lead district 8, obtains capacitor bottom crown 10 and n type GaN layer ground lead 11, like Fig. 8, shown in Figure 9;
Step 7, substrate cleaned after, with PECVD method on controlled area 7 and lead district 8, grow layer of sin x or SiO 2As insulating barrier 25; Continue then to adopt magnetron sputtering method on insulating barrier 26, to deposit the metal level II; The metal level II is carried out photoetching and etching; Insulating barrier 26 on the controlled area has formed the dielectric layer of capacitor, and the metal level II on the controlled area has formed capacitor top crown 12, the work TFT grid 13 that is connected with capacitor top crown 12 and work TFT grid lead 14 respectively, and control TFT grid 15; Metal level II on lead district 8 has formed control TFT grid lead 16, like Figure 10, shown in Figure 11;
Step 8, with the PECVD method at last SiNx or the SiO of depositing 2Insulating barrier 25; Adopt the PECVD method on insulating barrier 25, depositing the a-Si active layer again; And carry out photoetching and etching; Form work TFT raceway groove 17 and control TFT raceway groove 18 respectively; On the gate insulation layer of the lead terminal between work TFT grid 13 and the control TFT drain electrode 21, form a via hole, expose work TFT grid lead 14, like Figure 12, Figure 13, Figure 14 and shown in Figure 15;
Step 9, on the basis of step 8, adopt magnetron sputtering method to deposit the metal level III; The metal level III is carried out photoetching and etching; Metal level III on controlled area 7 forms the work TFT drain electrode 23 that is connected with transparent electrode layer respectively; Work TFT source electrode 22, control TFT drain electrode 21 that is connected with work TFT grid 13 and control TFT source electrode 22; Metal level on lead district 8
Figure 218605DEST_PATH_IMAGE001
has formed control TFT source lead 20, like Figure 16, Figure 17, Figure 18 and shown in Figure 19;
Step 10, on the controlled area 7 of substrate and lead district 8, adopt the PECVD method to deposit insulating barrier 25, on the insulating barrier 25 at work TFT source electrode 22 tops, form a via hole then; Then insulating barrier 25 on adopt magnetron sputtering method to deposit the metal level IV, and the metal level IV is carried out photoetching and etching, form the work TFT source lead 24 that is connected with the TFT source electrode 22 of working, shown in figure 20;
Step 11, on the controlled area 7 of substrate and lead district 8, adopt the PECVD method to deposit passivation protection layer 26, like Figure 21, Figure 22, Figure 23 and shown in Figure 24;
Step 12, above array base palte, cover phosphor powder layer (YAG:Ce 3+With SrWO 4: Eu 3+Mixed powder), above phosphor powder layer, cover and the supporting color membrane substrates of array base palte.Perhaps integrate phosphor powder layer and color membrane substrates, at the certain thickness phosphor powder layer (YAG:Ce of the inboard coating of the color cell of each color film 3+With SrWO 4: Eu 3+Mixed powder), directly color membrane substrates is covered on the array base palte then, thereby avoids phosphor powder layer directly is coated on the led array substrate.
According to above-mentioned steps and technology, can obtain blue-light excited TFT-LED array display base plate than good quality.
The above content of the present invention; Only provided and realized a kind of embodiment of the present invention; But shape, the thickness of the each several part structure in this scheme, and process conditions can change, to control LED luminous but this change does not break away from double T FT structure; And form white light and cooperate color film to satisfy the thought and the category of display requirement through blue-light excited fluorescent material, all changes that those skilled in the art oneself are understood should be included in the described claim scope.

Claims (9)

1. a blue-light excited TFT-LED array display base plate is characterized in that: be followed successively by resilient coating (2) and n type GaN layer (3) in substrate (1) top; Go up to blue light-emitting layer (4) at n type GaN layer (3), on blue light-emitting layer, be followed successively by p type GaN layer (5) and transparent electrode layer (6); N type GaN layer (3), blue light-emitting layer (4), p type GaN layer (5) and transparent electrode layer (6) are formed display unit jointly, on display unit, are provided with controlled area (7), between display unit, are provided with lead district (8); In controlled area (7), be provided with by capacitor bottom crown (10) and capacitor top crown (12), and be in the capacitor that the insulating barrier (25) between them is constituted together; The work TFT that forms by work TFT grid (13), work TFT raceway groove (17), work TFT source electrode (22), work TFT drain electrode (23) and intermediate insulating layer (25); And by controlling the control TFT that TFT grid (15), control TFT raceway groove (18), control TFT source electrode (19) and control TFT drain electrode (21) and intermediate insulating layer (25) are formed; In lead district, be provided with n type GaN layer ground lead (11), work TFT source lead (24), control TFT source lead (20) and control TFT grid lead (16); Wherein capacitor bottom crown (10) contacts with n type GaN layer (3), and n type GaN layer ground lead (11) (11) is connected with capacitor bottom crown (10); Capacitor top crown (12) is connected with work TFT grid (13) and control TFT drain electrode (21) respectively; Work TFT drain electrode (23) is connected with transparent electrode layer (6); Work TFT source electrode (22) is connected with work TFT source lead (24); Control TFT source electrode (19) is connected with control TFT source lead (20), and control TFT grid (15) is connected with control TFT grid lead (16); Insulating barrier (25) is between each layer metal electrode and the different layers lead-in wire, on controlled area (7) and lead district (8), passivation protection layer (26) is arranged; Cover phosphor powder layer in transparent electrode layer (6) top, above phosphor powder layer, cover supporting color membrane substrates; Perhaps be phosphor powder layer and the color membrane substrates structure that becomes one.
2. blue-light excited TFT-LED array display base plate according to claim 1 is characterized in that: substrate (1) material is sapphire single-crystal substrate or SiC single crystalline substrate.
3. blue-light excited TFT-LED array display base plate according to claim 1; It is characterized in that: n type semiconductor layer (3) and p type semiconductor layer (5) are made up of the p type or the n type GaN epitaxial film of different levels of doping; Wherein the n type semiconductor layer is mixed Si, and the p type semiconductor layer is mixed Mg or Zn.
4. blue-light excited TFT-LED array display base plate according to claim 1 is characterized in that: blue light-emitting layer (4) is formed light emitting array, and the blue light-emitting layer of each light emitting array (4) is more than one deck.
5. according to claim 1, described blue-light excited TFT-LED array display base plate, it is characterized in that: transparent electrode layer (6) is the ITO of growth in situ or IZO; Insulating barrier (25) and passivation protection layer (26) adopt SiO x, SiN xOr SiO xN yInsulating material is made; Work TFT raceway groove (17) and control TFT raceway groove (18) adopt amorphous silicon, polysilicon or monocrystalline silicon; Phosphor powder layer adopts yttrium-aluminium-garnet yellow-green fluorescence powder YAG:Ce 3+Or YAG:Ce 3+With SrWO 4: Eu 3+, CaSnO 3: Eu 3+The mixed powder of red fluorescence powder or the blue-light excited light that is sent down through with the blue light colour mixture after obtain the fluorescent material of white light.
6. blue-light excited TFT-LED array display base plate according to claim 1; It is characterized in that: capacitor bottom crown (10), top crown (12); Work TFT grid (13), work TFT drain electrode (23), work TFT source electrode (22); The material of control TFT grid (15), control TFT drain electrode (21), control TFT source electrode (19) and various lead-in wires is one or more collocation and the combination among Mo, Au, Cu, Ag, Ni or the Al; Perhaps their alloy, the perhaps collocation of Metal and Alloy and combination.
7. blue-light excited TFT-LED array display base plate according to claim 1, it is characterized in that: color membrane substrates comprises red resin, green resin and blue resins.
8. the manufacture method of a blue-light excited TFT-LED array display base plate is characterized in that:
Step 1, on substrate (1) substrate, utilize mocvd method to deposit resilient coating (2) successively, n type GaN layer (3);
Step 2, go up to adopt mocvd method growth blue light-emitting layer (4) at n type GaN layer (3);
Step 3, go up to adopt sputtering method to deposit p type GaN layer (5) at blue light-emitting layer (4);
Step 4, go up to adopt magnetron sputtering method deposit transparent electrode layer (6) at p type GaN layer (5);
Step 5, on the basis of step 4, carry out photoetching and etching; Etching depth surpasses blue light-emitting layer (4); Wear n type GaN layer (3) but must not carve; The zone that is etched forms controlled area (7) and lead district (8), and the zone that is not etched forms luminous zone (9), and they form array of display jointly;
Step 6, (7) and lead district (8) go up and adopt magnetron sputtering method to deposit the metal level I in the controlled area; The metal level I is carried out photoetching and etching; Make the metal level I of controlled area form capacitor bottom crown (10), make the metal level I of lead district (8) form n type GaN layer ground lead (11);
Step 7, (7) and lead district (8) go up and adopt the PECVD method to deposit insulating barrier (25) in the controlled area; Going up at insulating barrier (25) then adopts magnetron sputtering method to deposit the metal level II; After the metal level II carried out photoetching and etching; Metal level II on the controlled area has formed capacitor top crown (12), the work TFT grid (13) that is connected with capacitor top crown (12) and control TFT grid (15) respectively, and the metal level II on lead district (8) has formed control TFT grid lead (16);
Step 8, on the step 7 basis, adopt the PECVD method to deposit insulating barrier (25); Adopt the PECVD method on insulating barrier (25), depositing the a-Si active layer again; And carry out photoetching and etching; Form work TFT channel layer (17) and control TFT channel layer (18) respectively; In the top insulating barrier (25) of work TFT grid (13) lead terminal, form a via hole; Expose the terminal part of work TFT grid lead (14), supply to control in the next step TFT drain electrode (21) and be connected, come Control work TFT switching purposes with the switch that reaches through control TFT with work TFT grid (13);
Step 9, on the step 8 basis; Adopt magnetron sputtering method to deposit the metal level III; The metal level III is carried out photoetching and etching; Metal level III on the controlled area forms the work TFT drain electrode (23) that is connected with transparent electrode layer respectively; Work TFT source electrode (22); Control TFT drain electrode (21) that is connected with work TFT grid (13) and control TFT source electrode (19); And the control TFT drain electrode (21) that is connected with work TFT grid (13) through via hole, and control TFT source electrode (19), the metal level on lead district
Figure 2011103674943100001DEST_PATH_IMAGE001
has formed control TFT source lead (20);
Step 10, adopting the PECVD method to deposit insulating barrier (25), and through photoetching and etching, via hole of formation in the insulating barrier (25) at work TFT source electrode (22) top is so that the TFT source electrode (22) of working is connected with lead wire circuit; Adopt magnetron sputtering method to deposit the metal level IV, and carry out photoetching and etching, form the work TFT source lead (24) that is connected with work TFT source electrode (22);
Step 11, employing PECVD method deposit passivation protection layer (26), to controlled area (7) and lead district (8) circuit and relevant portion formation protection; Passivation protection layer (26) is carried out photoetching and etching, form the pad circuit part of substrate,, keep the complete sum cleaning of light-emitting zone simultaneously so that be connected with external circuit;
Step 12, cover phosphor powder layer, above phosphor powder layer, cover supporting color membrane substrates in transparent electrode layer (6) top; Perhaps phosphor powder layer and color membrane substrates are integrated,, directly color membrane substrates is covered on the transparent electrode layer (6) then at the certain thickness phosphor powder layer of the inboard coating of the color cell of each color film.
9. the manufacture method of blue-light excited TFT-LED array display base plate according to claim 8 is characterized in that: the method that the method for etching adopts wet etching and dry etching to combine.
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