CN102437169B - Manufacturing method of image sensor - Google Patents
Manufacturing method of image sensor Download PDFInfo
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- CN102437169B CN102437169B CN 201110382619 CN201110382619A CN102437169B CN 102437169 B CN102437169 B CN 102437169B CN 201110382619 CN201110382619 CN 201110382619 CN 201110382619 A CN201110382619 A CN 201110382619A CN 102437169 B CN102437169 B CN 102437169B
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Abstract
The invention relates to a manufacturing method of an image sensor. The method comprises the following steps: providing a chip substrate, wherein the first surface of the chip substrate comprises at least one photosensitive cell array with a plurality of photosensitive units, and a dielectric layer is formed on the first surface; partially etching the dielectric layer to form a plurality of first trenches on at least part of boundary of the photosensitive units of the photosensitive cell array; bonding the first surface of the chip substrate onto a support substrate by using a first thermoplastic material; carrying out back surface grinding on the second surface of the chip substrate, and thinning the chip substrate to an intermediate thickness; heating the support substrate to a first preset temperature to soften the first thermoplastic material, and thinning the chip substrate to a preset thickness; and heating the support substrate to a second preset temperature to soften the first thermoplastic material, and partially etching the chip substrate from the second surface of the chip substrate to form a plurality of second trenches communicated with the first trenches, so that at least part of photosensitive units in the photosensitive cell array are mutually separated.
Description
Technical field
The present invention relates to technical field of semiconductors, more specifically, the present invention relates to a kind of manufacture method of imageing sensor.
Background technology
Along with the development of semiconductor technology, imageing sensor has been widely used in the field that various needs carry out digital imagery, in electronic products such as digital camera, Digital Video, its usually and camera lens form in the lump camera module.Along with portable equipment is day by day lightening, in order to reduce volume or thickness, the distance in camera module between camera lens and imageing sensor also is designed to be more and more less.Yet, camera lens and the too small meeting of imageing sensor spacing cause incident ray via can not vertical irradiation after camera lens refraction on imageing sensor, in the light after the refraction and imageing sensor, the photosurface normal of photosensitive unit is certain angle, and at the imageing sensor edge, this phenomenon is particularly evident.Further, imageing sensor for array arrangement, the light of non-perpendicular irradiation, after the filter coating and lenticule through on photosensitive unit in the photosensitive unit array, can partly shine on adjacent photosensitive unit, thereby cause optical crosstalk each other.
For avoid via the light after camera lens refraction can not vertical irradiation on the photosurface of photosensitive unit, a kind of imageing sensor of prior art has adopted concave surface photosurface structure, its array of photosensitive unit by a plurality of separation forms.Fig. 1 shows the structure of this concave-surface image sensor.As shown in Figure 1, the photosensitive unit array 103 that this concave-surface image sensor comprises substrate 101 and is positioned at a plurality of separation in substrate 101.Wherein, substrate 101 comprises flexible material, and such as flexible high-molecular organic materials such as polyimides, therefore, substrate 101 is flexible, thereby allows the concave surface of photosensitive unit array 103 formation of a plurality of separation on it towards camera lens.In actual applications, the photosensitive unit array of these separation can be arranged with the direction that is suitable for the camera lens refracted ray, thereby make light substantially vertical irradiation to each photosensitive unit array of imageing sensor, and then reduce at least in part the optical crosstalk between adjacent photosensitive unit.
Yet, this concave-surface image sensor adopts the back-illuminated type structure usually, be that the filter coating 105 of imageing sensor and lenticule 107 need to be formed on photosensitive unit array 103 both sides with interconnection layer 109, this makes the substrate 111 that forms photosensitive unit array 103 must be by attenuate significantly.Yet, when the photosensitive unit array 103 of separate picture transducer, thinner substrate 111 is easy to stress and breaks, thereby affects product yield.In addition, this stress makes the photosensitive unit array 103 of the separation that is difficult to the formation reduced size, and it has in fact also affected the performance of formed concave-surface image sensor.
Summary of the invention
Visible, a kind of manufacture method of imageing sensor need to be provided, while avoiding the photosensitive unit array on separate substrate, photosensitive unit breaks.
In order to address the above problem, according to one embodiment of present invention, provide a kind of manufacture method of imageing sensor, comprise the steps:
A., chip substrate is provided, and the first surface of described chip substrate comprises that at least one has the photosensitive unit array of a plurality of photosensitive units, and is formed with dielectric layer on described first surface;
B. the described dielectric layer of partial etching, be positioned at least part of borderline a plurality of first grooves of a plurality of photosensitive units of described photosensitive unit array with formation;
C. adopt the first thermoplastic material that the first surface of described chip substrate is bonded in and supports on substrate;
D. back side grinding is carried out to so that described chip substrate is thinned to interior thickness in the second face of described chip substrate;
E. described support substrate is heated to the first predetermined temperature to soften described the first thermoplastic material, and described chip substrate is thinned to predetermined thickness;
F. described support substrate is heated to the second predetermined temperature to soften described the first thermoplastic material, and the second groove be communicated with to form a plurality of and described the first groove from the described chip substrate of the second face portion etching of described chip substrate, thereby make at least part of photosensitive unit in described photosensitive unit array be separated from each other.
Compared with prior art, the manufacture method of imageing sensor of the present invention connects the chip substrate and support substrate be thinned by thermoplastic material, and when separating this chip substrate, the support substrate is heated to soften the thermoplastic material on it.The thermoplastic material be softened has less hardness, thereby can discharge the stress of accumulating in chip substrate, thereby avoids the photosensitive unit in chip substrate to break.Because the stress in chip substrate can effectively be discharged, therefore, adopt this manufacture method can form the image sensor chip of the photosensitive unit of the separation with very small dimensions, be more suitable for the concave-surface image sensor of camera lens curvature with structure.
Above characteristic of the present invention and other characteristics are partly set forth embodiment hereinafter clearly.
The accompanying drawing explanation
Read the following detailed description to non-limiting example by the reference accompanying drawing, can more easily understand features, objects and advantages of the invention.Wherein, same or analogous Reference numeral represents same or analogous device.
Fig. 1 shows a kind of concave-surface image sensor of prior art;
Fig. 2 shows the flow process of the manufacture method of imageing sensor according to an embodiment of the invention;
Fig. 3 (a) shows the cutaway view of the flow process of imageing sensor manufacture method according to an embodiment of the invention to 3 (g);
Fig. 4 shows the flow process of the manufacture method of imageing sensor according to another embodiment of the present invention;
Fig. 5 (a) shows the cutaway view of the manufacture method flow process of imageing sensor according to another embodiment of the present invention to 5 (f);
Fig. 6 shows the flow process according to the manufacture method of the imageing sensor of further embodiment of this invention;
Fig. 7 (a) shows the cutaway view according to the manufacture method flow process of the imageing sensor of further embodiment of this invention to 7 (e).
Embodiment
Below discuss enforcement and the use of embodiment in detail.Yet, should be appreciated that discussed specific embodiment only exemplarily illustrates and implements and use ad hoc fashion of the present invention, but not limit the scope of the invention.
With reference to figure 2, show the flow process of the manufacture method of imageing sensor according to an embodiment of the invention, comprising:
Execution step S202, provide chip substrate, and the first surface of described chip substrate comprises that at least one has the photosensitive unit array of a plurality of photosensitive units, and is formed with dielectric layer on described first surface;
Execution step S204, the described dielectric layer of partial etching, be positioned at least part of borderline a plurality of first grooves of a plurality of photosensitive units of described photosensitive unit array with formation;
Execution step S206, adopt the first thermoplastic material that the first surface of described chip substrate is bonded in and supports on substrate;
Execution step S208, carry out back side grinding so that described chip substrate is thinned to interior thickness to the second face of described chip substrate;
Execution step S210, be heated to the first predetermined temperature to soften described the first thermoplastic material to described support substrate, and described chip substrate be thinned to predetermined thickness;
Execution step S212, described support substrate is heated to the second predetermined temperature to soften described the first thermoplastic material, and the second groove be communicated with to form a plurality of and described the first groove from the described chip substrate of the second face portion etching of described chip substrate, thereby make at least part of photosensitive unit in described photosensitive unit array be separated from each other.
Fig. 3 (a) shows the cutaway view of the flow process of imageing sensor manufacture method according to an embodiment of the invention to 3 (g).Next, in conjunction with Fig. 2 and Fig. 3 (a), to 3 (g), an embodiment of the manufacture method of imageing sensor of the present invention is described further.
As shown in Fig. 3 (a), chip substrate 301 is provided, this chip substrate 301 is such as being the Semiconductor substrate such as silicon, germanium or silicon-on-insulator.On the first surface 302 of this substrate 301, at least one photosensitive unit array 303 of preparation, wherein, have a plurality of photosensitive units in each photosensitive unit array 303, includes photodiode and one or above MOS transistor in each photosensitive unit.
Then, form dielectric layer 304 on the first surface 302 of this chip substrate 301, wherein in this dielectric layer 304, further include one deck of being positioned at wherein or above metal interconnecting wires 305.Dielectric layer 304 covers the first surface 302 of chip substrate 301 equably, thereby photosensitive unit array 303 is covered, and the metal interconnecting wires 305 in dielectric layer 304 is by a plurality of photosensitive unit electric connections in photosensitive unit array 303.Particularly, can adopt chemical vapor deposition method to form this dielectric layer 304, adopt chemical vapour deposition (CVD) or physical gas-phase deposition to form this metal interconnecting wires 305.
Then, as shown in Fig. 3 (b), this dielectric layer 304 of partial etching forms a plurality of the first grooves 306 in this dielectric layer 304, and wherein these first grooves 306 are positioned at the border of a plurality of photosensitive units of photosensitive unit array 303.Alternatively, can adopt dry etching, wet etching or other this dielectric layers 304 of etching mode etching.According to the difference of specific embodiment, this first groove 306 can be positioned at the border of each photosensitive unit, so that after subsequent technique completes, each photosensitive unit in this photosensitive unit array 303 is separated from each other; This first groove 306 also can only be arranged in the border of the part photosensitive unit of this photosensitive unit array 303, so that after subsequent technique completes, this photosensitive unit array 303 is separated into a plurality of photosensitive unit pieces, and wherein each photosensitive unit piece also comprises a plurality of photosensitive units.
In one embodiment, the thickness of the degree of depth of this first groove 306 and dielectric layer 304 is basic identical, so that chip substrate 301 parts under dielectric layer 304 are exposed.And the width of the first groove 306 is no more than 30% of photosensitive unit pitch in photosensitive unit array 303.For example, the photosensitive unit pitch is 1.7 microns, and the width of this first groove 306 is no more than 0.51 micron substantially.
It should be noted that, because each photosensitive unit of photosensitive unit array 303 in chip substrate 301 adjoins each other, therefore, borderline a plurality of the first grooves 306 that are positioned at a plurality of photosensitive units are interconnected in fact, thereby have formed cancellated groove at the first surface 302 of chip substrate 301.These first grooves 306 that are interconnected make the dielectric layer 304 on a plurality of photosensitive units be separated from each other on the one hand, also make on the other hand metal interconnecting wires 305 parts in dielectric layer 304 expose and be suspended between the dielectric layer 304 of separation.It will be appreciated by those skilled in the art that, the length of the metal interconnecting wires 305 exposed can be longer than the width of the first groove 306, be for example more than 1.05 times of the first groove 306 width, thereby after making photosensitive unit separate, metal interconnecting wires 305 still can extend certain length and fracture guarantee between photosensitive unit electric connection mutually not.Alternatively, metal interconnecting wires 305 is for example copper cash, aluminum steel or other interconnect materials.
As shown in Fig. 3 (c), the substrate 307 that provides support, this supports that substrate 307 be for example at the bottom of glass substrate, Semiconductor substrate, stainless steel lining or the substrate of other materials formation.This support substrate 307 has a side at least for even curface comparatively, with the first surface 302 of chip substrate 301, indirectly fits being suitable for.Then, adopt the first thermoplastic material 308, for example paraffin or PUR, be bonded in the first surface of chip substrate 301 302 to support substrate 307.Wherein, this first thermoplastic material 308 has thermoplasticity, i.e. thermoplastic and the characteristic of hardening by cooling.Preferably, when this first thermoplastic material 308 softens to liquid state or molten state, it also has the characteristic that viscosity with temperature changes, and when temperature is higher, viscosity is higher, and temperature lower characteristic of viscosity when low.Alternatively, PUR is for example EVA (Ethylene Vinyl Acetate) PUR, and it is the copolymer of ethene and vinylacetate.
In the process of bonding chip substrate 301, need to be heated the first thermoplastic material 308, so that it is in liquid state or molten state, thereby make this first thermoplastic material 308 can be filled in equably chip substrate 301 and support between substrate 307.Be appreciated that because the first thermoplastic material 308 in liquid state or molten state has certain mobility, thereby it can fill the first groove 306 on chip substrate 301 at least partly.
Then, this chip substrate 301 is carried out to attenuate, so that photosensitive unit array 303 exposes from second 309 of chip substrate 301, this second 309 first surface 302 with chip substrate 301 is relative.For fear of cumulative stress in chip substrate 301 thinning processes, this attenuate can be divided at least two stages to carry out.Particularly, in the first stage, as shown in Fig. 3 (d), second 309 of chip substrate 301 carried out to back side grinding so that this chip substrate 301 is thinned to interior thickness.Back side grinding has higher attenuate speed, but therefore easy cumulative stress needs to retain the chip substrate 301 that be no less than interior thickness and make chip substrate 301 break with the stress of avoiding generation.In one embodiment, this interior thickness is not less than 5 microns.
As shown in Fig. 3 (e), after chip substrate 301 is thinned to interior thickness, in second stage, continue attenuate chip substrate 301, but in this thinning process, need heating to support substrate 307, so that support the first thermoplastic material 308 on substrate 307 to be heated in the lump.In one embodiment, will support substrate 307 to be heated to the first predetermined temperature so that the lower hardness at least 50% of the hardness of the first thermoplastic material 308 during with respect to room temperature.In actual applications, the attenuate of this second stage can adopt chemico-mechanical polishing, dry method or wet-etching technology.Through the attenuate of this second stage, chip substrate 301 is thinned to predetermined thickness, is for example 1 to 4 micron, so that the photosensitive unit in photosensitive unit array 303 exposes from second 309 of chip substrate 301, makes the photosurface of photosensitive unit expose.Due to the lower hardness of the first thermoplastic material 308, this stress that makes chip substrate 301 accumulate in thinning process is released at least in part, thereby can be because of excessive not the breaking of stress of accumulation.
Next, as shown in Fig. 3 (f), to supporting that substrate 307 is heated to the second predetermined temperature to soften the first thermoplastic material 308 on it, and from second 309 partial etching chip substrate 301 of chip substrate 301 to form a plurality of the second grooves 310 that are communicated with the first groove 306, thereby make at least part of photosensitive unit in photosensitive unit array 303 be separated from each other.In one embodiment, will support substrate 307 to be heated to the second predetermined temperature so that the lower hardness at least 50% of the hardness of the first thermoplastic material 308 during with respect to room temperature.Particularly, the plurality of the second groove 310 is aimed at mutually with the position of a plurality of the first grooves 306, the thickness that its etching depth should equal chip substrate 301 substantially equates, so that be filled in the first thermoplastic material 308 of supporting between substrate 307 and chip substrate 301, exposes.In actual applications, can adopt dry etching to form this second groove 310.It should be noted that, because the second groove 310 is from second 309 etching of chip substrate 301, and the photosurface of photosensitive unit is towards this second 309, therefore, the width of this second groove 310 should be as far as possible little, to avoid this etching to affect the photosensitive property of photosensitive unit, the performance of photodiode wherein for example.In a preferred embodiment, the width of this second groove 310 is less than the width of the first groove 306, and for example the width of this second groove 310 is no more than 0.3 micron.
In the process of separating photosensitive unit, the hardness of the first thermoplastic material 308 be connected with photosensitive unit significantly reduces because being heated.Therefore, the stress accumulated in chip substrate 301 can further be discharged, and the photosensitive unit separated can be because of stress raisers within it section break, this makes the yield of the photosensitive unit array of resulting separation be improved.Further, in above-mentioned manufacturing process, because stress can be discharged comparatively fully, thereby the single photosensitive unit piece (wherein can comprise a plurality of photosensitive units) of each separation or the size of photosensitive unit can reduce, this makes it possible to make the photosensitive unit array of the concave curvature that is more suitable for concave-surface image sensor.
In actual applications, each chip substrate 301 can comprise a plurality of photosensitive unit arrays 303 usually, and each photosensitive unit in each photosensitive unit array 303 also can be made filter coating and/or lenticule thereon.Therefore, in a preferred embodiment, after the photosensitive unit in separating photosensitive unit array 303, this manufacture method also comprises the step that forms filter coating and/or lenticule and scribing.Be appreciated that according to the difference of concrete application, on this photosensitive unit array 303, also can not form filter coating and/or lenticule.
Particularly, as shown in Fig. 3 (g), second 309 from chip substrate 301 forms the filter coating array corresponding with a plurality of photosensitive unit arrays 303 311 and microlens array 312, wherein each photosensitive unit array 303 and filter coating array 311 and microlens array 312.Then, diced chip substrate 301 is to separate at least one photosensitive unit array 303.According to the difference of embodiment, can adopt laser cutting or machine cuts mode diced chip substrate 301.Preferably, can diced chip substrate 301 to separate all photosensitive unit arrays 303.Wherein, the separation of photosensitive unit array 303 is different from the separation of the photosensitive unit in photosensitive unit array 303, because the photosensitive unit array 303 after separating is chips independently, can not have metal interconnecting wires 305 interconnection between different photosensitive unit arrays 303; And, after in photosensitive unit array 303, photosensitive unit separates, it is still common forms the chip with required function, i.e. image sensor chip, and still can be by metal interconnecting wires 305 interconnection to transmit betwixt the signal of telecommunication between different photosensitive units.In addition, in actual applications, after being separated by scribing, each photosensitive unit array 303 edge also has signal processing circuit district 313, and this signal processing circuit district 313 has and compares the area that single photosensitive unit is larger.
In actual applications, after formation has the photosensitive unit array of photosensitive unit of a plurality of separation, need to further this photosensitive unit array be peeled off from the support substrate, and the photosensitive unit of separation is arranged as reservation shape, the shape of concave surface for example, have the imageing sensor of concave structure with formation.
Fig. 4 shows the flow process of the manufacture method of imageing sensor according to another embodiment of the present invention, wherein, this imageing sensor has been separated into the photosensitive unit array of the photosensitive unit with a plurality of separation as shown in Fig. 3 (g) as the making flow process in previous embodiment, this photosensitive unit array is bonded in by the first thermoplastic material to be supported on substrate.
As shown in Figure 4, the flow process of this manufacture method comprises:
Execution step S402, provide transfer device, and this transfer device has transfer face and pipeline, and the opening of this pipeline one end is positioned at this transfer face middle part;
Execution step S404, adopt the second thermoplastic material that this photosensitive unit array is bonded on transfer face;
Execution step S406, heat this supports substrate so that the viscosity of the first thermoplastic material, lower than the viscosity of the second thermoplastic material, relatively moves this support substrate and transfer device so that the photosensitive unit array from the support substrate separation.
Can find out, by the photosensitive unit array from the process of supporting substrate separation, photosensitive unit array both sides are thermoplastic material, it has lower hardness after being heated.When heating-up temperature is higher, the thermoplastic material of both sides even can be in molten state or liquid state, thereby can effectively discharge stress, to avoid the photosensitive unit in the photosensitive unit array, in separation process, breaks.
Fig. 5 (a) shows the cutaway view of the flow process of imageing sensor manufacture method according to another embodiment of the present invention to 5 (f).Next, in conjunction with Fig. 4 and Fig. 5 (a), to 5 (f), the embodiment of the manufacture method of imageing sensor of the present invention is described further.
As shown in Fig. 5 (a), transfer device 501 is provided, this transfer device 501 has transfer face 502 and pipeline 503, and the opening of these pipeline 503 1 ends is positioned at this transfer face 502 middle parts.In actual applications, the plane that this transfer face 502 is circle, square or rectangle, its area equates with the area of photosensitive unit array 504 substantially, is for example 80% to 120% of photosensitive unit array 504 areas, to be suitable for from supporting substrate 505 to peel off this photosensitive unit array 504.
Particularly, support that the photosensitive unit array 504 on substrate 505 is separated into a plurality of photosensitive units 506, the one side is formed with filter coating 507 and lenticule 508.The metal interconnecting wires 510 that the opposite side of each photosensitive unit 506 also is formed with dielectric layer 509 and is arranged in this dielectric layer 509, metal interconnecting wires 510 between the dielectric layer 509 of different photosensitive units 506 interconnects, so that the mutual electric connection of different photosensitive unit 506.Wherein, different photosensitive units 506 are isolated by groove 511 therebetween, and this groove 511 has the first thermoplastic material 512 near a part of area filling of supporting substrate 505, and this first thermoplastic material 512 is for example paraffin or PUR.This first thermoplastic material 512 is also being supported between substrate 505 and photosensitive unit array 504, so that photosensitive unit array 504 can be bonded on support substrate 505.
Afterwards, adopt the second thermoplastic material 513 that photosensitive unit array 504 is bonded on the transfer face 502 of transfer device 501.Like this, photosensitive unit array 504 1 sides are bonding with support substrate 505 by the first thermoplastic material 512, and opposite side is bonding with transfer device 501 by the second thermoplastic material 513.Be appreciated that at the bonding photosensitive unit array of this second thermoplastic material 513 504 this second thermoplastic material 513 is in a liquid state or molten state during with transfer device 501, thereby its part of filling groove 511 partly.Similar to the first thermoplastic material 512, the second thermoplastic material 513 also has thermoplasticity, and it is for example paraffin or PUR.Preferably, when this second thermoplastic material 513 softens to liquid state or molten state, it also has the characteristic that viscosity with temperature changes, and when temperature is higher, viscosity is higher, and temperature lower characteristic of viscosity when low.Alternatively, PUR is for example the EVA PUR.
Then, as shown in Fig. 5 (b), heating support substrate so that the viscosity of the first thermoplastic material 512 lower than the viscosity of the second thermoplastic material 513, this supports substrate 505 that relatively moves with transfer device 501 so that photosensitive unit array 504 from support substrate 505, peel off.In one embodiment, can move transfer device 501 along the direction of supporting substrate 505 planes.
Particularly, by heating, support substrate 505, stick to the corresponding intensification of the first thermoplastic material 512 of supporting on substrate 505, this makes the reduced viscosity of the first thermoplastic material 512.And the second thermoplastic material 513 is relatively away from supporting substrate 505, supported substrate 505 heat effects of its temperature affect less, thereby the temperature of the second thermoplastic material 513 is substantially constant or have a less increasing extent of temperature for the first thermoplastic material 512.Based on this, in actual applications, can choose the second thermoplastic material 513 had at the same temperature with respect to the first thermoplastic material 512 viscosity higher, so that in this separation process, photosensitive unit array 504 can stick on transfer device 501 more closely, thereby be transferred device 501, takes away support substrate 505.In addition, also can choose the second thermoplastic material 513 with the first thermoplastic material 512 same materials, due to the temperature of the first thermoplastic material 512 higher than the second thermoplastic material 513, thereby the viscosity of the second thermoplastic material 513 is higher, thereby make photosensitive unit array 504 to stick to more closely on transfer device 501, and be transferred device 501 and take away and support substrate 505.
The intensification of the first thermoplastic material 512 also makes its lower hardness, the first thermoplastic material 512 that hardness is lower can be released in the stress produced in this stripping process, thereby avoid the photosensitive unit 506 in photosensitive unit array 504 to break, this has effectively improved the yield of chip.In addition, the temperature of the second thermoplastic material 513 also can raise, thereby makes its lower hardness, and then discharges the stress in stripping process.
Alternatively, by photosensitive unit array 504 from supporting that substrate 505 is peeled off, can be cleaned or otherwise be processed transfer device 501, be removed with the second thermoplastic material 513 by it, thus make photosensitive unit array 504 become can be to be packaged nude film.
In one embodiment, by photosensitive unit array 504 from supporting that substrate 505 is peeled off, the photosensitive unit of a plurality of separation of photosensitive unit array 504 is distributed in the surface of the second thermoplastic material 513 basically.Thereby, can utilize the thermoplasticity of the second thermoplastic material 513 to change the shape of the second thermoplastic material 513, thereby change arranging of photosensitive unit array 513 on it.Preferably, when the second thermoplastic material 513, in molten state or when liquid, due to capillary effect, the second thermoplastic material 513 is easy to form and is similar to sphere or hemispherical curve form.The second thermoplastic material 513 of this curve form can be so that the photosensitive unit of the separation in photosensitive unit array 504 506 forms concave structure.
Correspondingly, this photosensitive unit array 504 is processed so that the photosensitive unit of separation wherein 506 forms concave structure and comprised the steps:
-heat described transfer device, and form projection to injecting fluid in described pipeline with the middle part at the photosensitive unit array;
-the photosensitive unit array of described projection is fitted on the adjusting base of the concave surface with reservation shape, perhaps the photosensitive unit array of described projection be fitted in to the adjusting base of the concave surface with reservation shape and have between the adjusting device of convex surface of reservation shape, take the Adjusting Shape of the photosensitive unit array of described projection as consistent with described reservation shape;
-packaging part of the concave surface with described reservation shape is provided, and described photosensitive unit array is sticked in described concave surface.
Particularly, as shown in Fig. 5 (c), add heat removal devices 501, and inject fluid in pipeline 503, with the middle part at photosensitive unit array 504, form projection.According to the difference of specific embodiment, this fluid can be air, nitrogen or other gas, can be also the liquid such as the second thermoplastic material.Preferably, can in pipeline 503, inject the second thermoplastic material.
Afterwards, as shown in Fig. 5 (d), this photosensitive unit array 504 is fitted in the adjusting base 514 of the concave surface with reservation shape, the shape of this concave surface should be consistent with the concave of the concave surface transducer of required moulding.The adjusting base 514 of this concave surface can be for regulating arranging between photosensitive unit array 504 each photosensitive units, so that the shape of the photosensitive unit array 504 of projection is consistent with this reservation shape.Simultaneously, cooling this transfer device 504 is to solidify the second thermoplastic material 513.After these the second thermoplastic material 513 solidifying and setting, the photosensitive unit of a plurality of separation in photosensitive unit array 504 is distributed on the second thermoplastic material 513 of institute's moulding definitely.
Alternatively, after this photosensitive unit array 504 is fitted to the concave surface of this adjusting base 514, can also on this adjusting base 514, load static, make these photosensitive unit array 504 Electrostatic Absorption on adjusting base 514.Afterwards, transfer device 501 is separated with photosensitive unit array 504.Afterwards, by described photosensitive unit array 504, the one side away from adjusting base 514 fits on the adjusting device (not shown) of the convex surface with this reservation shape by the second thermoplastic material again.The shape of the concave surface of this convex surface and transfer device 501 is basic identical.Like this, this photosensitive unit array 504 is fitted between adjusting device and adjusting base, thereby it is consistent with reservation shape to make its shape accurately to be adjusted into.
In actual applications, also need the photosensitive unit array 504 of this reservation shape is connected on packaging part, draw with the pin by photosensitive unit array 504, and make this photosensitive unit array 504 not yielding.Particularly, as shown in Fig. 5 (e), the packaging part 516 of the curved surface 515 with reservation shape is provided, and photosensitive unit array 504 is sticked on this curved surface 515, wherein this curved surface 515 should be basically identical with the arrange reservation shape that forms of photosensitive unit array 504, and it can design according to the lens properties of camera module.Particularly, photosensitive unit array 504 comprises a plurality of pin (not shown)s, and the curved surface 515 of this packaging part 516 comprises a plurality of pad (not shown)s corresponding with these pins, correspondingly, can adopt mode coated with conductive glue on the pad of curved surface 515 of for example silk screen printing, and apply insulating cement at the non-welding disking area of curved surface 515; Then, by this conducting resinl or insulating cement, photosensitive unit array 504 is sticked on this curved surface 515.
After adhering on packaging part 516 by photosensitive unit array 504, as shown in Fig. 5 (f), photosensitive unit array 504 is separated from transfer device or adjusting device.For example, can heat transfer device or adjusting device, so that the second thermoplastic material softens to liquid state or molten state, and then relatively move transfer device or adjusting device and packaging part 516.Because photosensitive unit array 504 has been insulated glue or conducting resinl sticks on packaging part 516, and the viscosity of the second thermoplastic material significantly reduces, thereby transfer device or adjusting device make photosensitive unit array 504 separate with transfer device or adjusting device with relatively moving of packaging part 516.Afterwards, the second thermoplastic material residual on photosensitive unit array 504 is removed, for example by chemical solution, wash this second thermoplastic material off.Like this, the photosensitive unit array 504 that has a concave structure can be fixed on packaging part 516.Finally, can also be thereon further connection lens with the camera module of complete.
Fig. 6 shows the flow process according to the manufacture method of the imageing sensor of further embodiment of this invention, wherein, this imageing sensor has been separated into the photosensitive unit array of the photosensitive unit with a plurality of separation as shown in Fig. 3 (g) as the making flow process in previous embodiment, this photosensitive unit array is bonded in by the first thermoplastic material to be supported on substrate.
As shown in Figure 6, the flow process of this manufacture method comprises:
Execution step S602, provide extraction element, and described extraction element has transfer face and pipeline, and the opening of described pipeline one end is positioned at described transfer face middle part;
Execution step S604, adopt the second thermoplastic material that described photosensitive unit array is bonded on described transfer face;
Execution step S606, heat described support substrate so that the viscosity of described the first thermoplastic material lower than the viscosity of described the second thermoplastic material, and the edge of described photosensitive unit array is adsorbed on described transfer face, vertically mobile described extraction element also injects fluid in described pipeline, so that described photosensitive unit array and described support substrate separation form projection at the middle part of described photosensitive unit array;
Execution step S608, the photosensitive unit array of described projection is fitted in the adjusting base of the concave surface with reservation shape, perhaps the photosensitive unit array of described projection be fitted in to the adjusting base of the concave surface with reservation shape and have between the adjusting device of convex surface of reservation shape, take the Adjusting Shape of the photosensitive unit array of described projection as consistent with described reservation shape;
Execution step S610, provide the packaging part of the curved surface with described reservation shape, and described photosensitive unit array sticked in described curved surface.
Can find out, by the photosensitive unit array from the process of supporting substrate separation, photosensitive unit array both sides are thermoplastic material, it has lower hardness.When heating-up temperature is higher, the thermoplastic material of both sides even can be in molten state or liquid state, thereby can effectively discharge stress, to avoid the photosensitive unit in the photosensitive unit array, in separation process, breaks.
Fig. 7 (a) shows the cutaway view according to the flow process of the imageing sensor manufacture method of further embodiment of this invention to 7 (e).Next, in conjunction with Fig. 6 and Fig. 7 (a), to 7 (e), the embodiment of the manufacture method of imageing sensor of the present invention is described further.
As shown in Fig. 7 (a), extraction element 701 is provided, this extraction element 701 has transfer face 702 and pipeline 703, and the opening of these pipeline 703 1 ends is positioned at this transfer face 702 middle parts.Alternatively, this transfer face 702 has at least four salient points 720 that are positioned at its edge, cave in relatively in the middle part of this transfer face 702, it is for example hemispheric curved surface, can load electrostatic force or vacuum on the edge of this transfer face 702 or salient point 720, so that the edge of photosensitive unit array 704 can be by vacuum suction or Electrostatic Absorption on this transfer face, thereby load at the edge of photosensitive unit array 704 power that surpasses its center.It should be noted that; in actual applications; the edge of this photosensitive unit array 704 can comprise signal processing circuit district 721 usually; and the area in signal processing circuit district 721 is relatively large; therefore, the edge of alleged photosensitive unit array 704 is attracted on transfer face the situation that comprises that signal processing circuit district 721 is adsorbed here.In one embodiment, transfer face 702 has four salient points 720, and it is distributed on this transfer face 702 in twos symmetrically.The area of transfer face 702 equates with the area of photosensitive unit array 704 substantially, is for example 80% to 120% of photosensitive unit array 704 areas, to be suitable for from supporting substrate 705 to peel off this photosensitive unit array 704.
Particularly, support the photosensitive unit array 704 on substrate 705 to be separated into a plurality of photosensitive units 706.One side of each photosensitive unit 706 is formed with filter coating 707 and lenticule 708, its opposite side also is formed with the metal interconnecting wires 710 in dielectric layer 709 and this dielectric layer 709, metal interconnecting wires 710 between the dielectric layer 709 of different photosensitive units 706 interconnects, so that the mutual electric connection of different photosensitive unit 706.Wherein, different photosensitive units 706 are isolated by groove 711 therebetween, and this groove 711 has the first thermoplastic material 712 near a part of area filling of supporting substrate 705, and this first thermoplastic material 712 is for example paraffin or PUR.This first thermoplastic material 712 is also being supported between substrate 705 and photosensitive unit array 704, so that photosensitive unit array 704 can be bonded on support substrate 705.
Afterwards, adopt the second thermoplastic material 713 photosensitive unit array 704 to be bonded on the transfer face 702 of extraction element 701, wherein, this second thermoplastic material 713 is filled the depression in this transfer face 702.Then, load static or vacuum on this extraction element 701, photosensitive unit array 704 is adsorbed on the transfer face of extraction element 701, for example be positioned at least 4 salient points 720 at its edge.Like this, photosensitive unit array 704 1 sides by the first thermoplastic material 712 with support that substrate 705 is bonding and be adsorbed on extraction element 701 by salient point 720, and opposite side is bonding with extraction element 701 by the second thermoplastic material 713.Be appreciated that at the bonding photosensitive unit array of this second thermoplastic material 713 704 this second thermoplastic material 713 is in a liquid state or molten state during with extraction element 701, thereby its part of filling groove 711 partly.Similar to the first thermoplastic material 712, the second thermoplastic material 713 also has thermoplasticity, and it is for example paraffin or PUR.Preferably, when this second thermoplastic material 713 softens to liquid state or molten state, it also has the characteristic that viscosity with temperature changes, and when temperature is higher, viscosity is higher, and temperature lower characteristic of viscosity when low.Alternatively, PUR is for example the EVA PUR.
Then, as shown in Fig. 7 (b), heating is supported substrate 705 so that the viscosity of the first thermoplastic material 712, lower than the viscosity of the second thermoplastic material 713, and is adsorbed on the edge of photosensitive unit array 704 on this transfer face.Afterwards, vertically move this extraction element 701 and inject fluid in pipeline 703, so that photosensitive unit array 704 separates and forms projection at the middle part of photosensitive unit array 704 with support substrate 705.Due to capillary effect, the second thermoplastic material 713 is easy to form and is similar to sphere or hemispherical curve form.The second thermoplastic material 713 of this curve form can be so that the projection of photosensitive unit array 704 be the hemisphere face shape, thereby makes the photosensitive unit 704 of separation wherein form concave structures.In this article, vertically mobile referring to will support substrate 705 and extraction element 701 to relatively move so that the two spacing increases.Wherein, this fluid can be air, nitrogen or other gas, can be also the liquid such as the second thermoplastic material 713.This second thermoplastic material 713 comprises paraffin or hot melt agent.
Particularly, by heating, support substrate 705, stick to the corresponding intensification of the first thermoplastic material 712 of supporting on substrate 705, this makes the reduced viscosity of the first thermoplastic material 712.And the second thermoplastic material 713 is relatively away from supporting substrate 705, supported substrate 705 heat effects of its temperature affect less, thereby the temperature of the second thermoplastic material 713 is substantially constant or have a less increasing extent of temperature for the first thermoplastic material 712.Based on this, in actual applications, can choose the second thermoplastic material 713 had at the same temperature with respect to the first thermoplastic material 712 viscosity higher, so that in this separation process, photosensitive unit array 704 can stick on extraction element 701 more closely.In addition, extraction element 701 is in the static at its salient point 720 places or vacuum also loading force on photosensitive unit array 704, thereby make photosensitive unit array 704 be extracted device 701, takes away and supports substrate 705.In addition, also can choose the second thermoplastic material 713 with the first thermoplastic material 712 same materials, due to the temperature of the first thermoplastic material 712 lower than the second thermoplastic material 713, thereby the viscosity of the second thermoplastic material 713 is higher, thereby make photosensitive unit array 704 to stick to more closely on extraction element 701, and be extracted device 701 and take away and support substrate 705.It should be noted that, because the second thermoplastic material 713 has viscosity, thereby, after extraction element 701 drive sensitization cell arrays 704 are left support substrate 705, the static or the vacuum that are carried in salient point 720 places can be removed or retain.
The intensification of the first thermoplastic material 712 also makes its lower hardness, and the first softening thermoplastic material 712 can be released in the stress produced in this stripping process, thereby avoids the photosensitive unit in photosensitive unit array 704 to break, and this has effectively improved the yield of chip.In addition, after the second thermoplastic material 713 is heated, in liquid state or molten state, this also discharges the stress in stripping process.
Afterwards, as shown in Fig. 7 (c), this photosensitive unit array 704 is fitted in the adjusting base 714 of the concave surface with reservation shape, the shape of this concave surface should be consistent with the concave of the concave surface transducer of required moulding.The adjusting base 714 of this concave surface can be for regulating arranging between photosensitive unit array 704 each photosensitive units.Simultaneously, cooling this extraction element 701 is to solidify the second thermoplastic material 713.After these the second thermoplastic material 713 solidifying and setting, the photosensitive unit of a plurality of separation in photosensitive unit array 704 is distributed on the second thermoplastic material 713 of institute's moulding definitely.Be appreciated that alternatively, after this photosensitive unit array 704 is fitted to the concave surface of this adjusting base 714, can also on this adjusting base 714, load static, make these photosensitive unit array 704 Electrostatic Absorption on adjusting base 714.Afterwards, transfer device 701 is separated with photosensitive unit array 704.Then, by described photosensitive unit array 704, the one side away from adjusting base 714 fits on the adjusting device (not shown) of the convex surface with this reservation shape by the second thermoplastic material again.The shape of the concave surface of this convex surface and transfer device 701 is basic identical.Like this, this photosensitive unit array 704 is fitted between adjusting device and adjusting base, thereby it is consistent with reservation shape to make its shape accurately to be adjusted into.
In actual applications, also need this photosensitive unit array 704 is connected on packaging part, draw with the pin by photosensitive unit array 704, and make this photosensitive unit array 704 not yielding.Particularly, as shown in Fig. 7 (d), the packaging part 716 of the curved surface 715 with reservation shape is provided, and photosensitive unit array 704 is sticked on this curved surface 715, wherein this curved surface 715 should be basically identical with the arrange shape of the curved surface that forms of photosensitive unit array 704.Particularly, photosensitive unit array 704 comprises a plurality of pin (not shown)s, and the curved surface 715 of this packaging part 716 comprises a plurality of pad (not shown)s corresponding with these pins, correspondingly, can adopt mode coated with conductive glue on the pad of curved surface 715 of for example silk screen printing, and apply insulating cement at the non-welding disking area of curved surface 715; Then, by this conducting resinl or insulating cement, photosensitive unit array 704 is sticked on this curved surface 715.
After adhering on packaging part 716 by photosensitive unit array 704, as shown in Fig. 7 (e), photosensitive unit array 704 is separated from extraction element or adjusting device.For example, can heat extraction element, so that the second thermoplastic material softens to liquid state or molten state, and then relatively move extraction element and packaging part 716.Because photosensitive unit array 704 has been insulated glue or conducting resinl sticks on packaging part 716, and the viscosity of the second thermoplastic material significantly reduces, thereby extraction element or adjusting device make photosensitive unit array 704 separate with extraction element or adjusting device with relatively moving of packaging part 716.Afterwards, the second thermoplastic material residual on photosensitive unit array 704 is removed, for example by chemical solution, wash this second thermoplastic material off.Like this, the photosensitive unit array 704 that has a concave structure can be fixed on packaging part 716.Finally, can also be thereon further connection lens with the camera module of complete.
Although illustrate in detail and described the present invention in accompanying drawing and aforesaid description, should think that this is illustrated and describes is illustrative and exemplary, rather than restrictive; The invention is not restricted to above-mentioned execution mode.
The those skilled in the art of those the art can, by research specification, disclosed content and accompanying drawing and appending claims, understand and implement other changes of the execution mode to disclosing.In the claims, word " comprises " element and the step of not getting rid of other, and wording " one " is not got rid of plural number.In the practical application of invention, part may execute claims the function of middle quoted a plurality of technical characterictics.Any Reference numeral in claim should not be construed as the restriction to scope.
Claims (23)
1. the manufacture method of an imageing sensor, comprise the steps:
A., chip substrate is provided, the first surface of described chip substrate comprises that at least one has the photosensitive unit array of a plurality of photosensitive units, and be formed with dielectric layer on described first surface, described dielectric layer covers the described first surface of described chip substrate equably, thereby described photosensitive unit array is covered;
B. the described dielectric layer of partial etching, be positioned at least part of borderline a plurality of first grooves of a plurality of photosensitive units of described photosensitive unit array with formation;
C. adopt the first thermoplastic material that the first surface of described chip substrate is bonded in and supports on substrate;
D. back side grinding is carried out to so that described chip substrate is thinned to interior thickness in the second face of described chip substrate;
E. described support substrate is heated to the first predetermined temperature to soften described the first thermoplastic material, and described chip substrate is thinned to predetermined thickness;
F. described support substrate is heated to the second predetermined temperature to soften described the first thermoplastic material, and the second groove be communicated with to form a plurality of and described the first groove from the described chip substrate of the second face portion etching of described chip substrate, thereby make at least part of photosensitive unit in described photosensitive unit array be separated from each other.
2. manufacture method according to claim 1, is characterized in that, in described step e, described support substrate is heated to the first predetermined temperature so that the lower hardness at least 50% of the hardness of described the first thermoplastic material during with respect to room temperature.
3. manufacture method according to claim 1, is characterized in that, in described step f, described support substrate is heated to the second predetermined temperature so that the lower hardness at least 50% of the hardness of described the first thermoplastic material during with respect to room temperature.
4. manufacture method according to claim 1, is characterized in that, in described step e, described attenuate comprises chemico-mechanical polishing, dry etching or wet etching.
5. manufacture method according to claim 1, is characterized in that, described step b comprises: form described the first groove on the border of each photosensitive unit in described photosensitive unit array.
6. manufacture method according to claim 1, is characterized in that, the width of described the first groove is no more than 30% of described photosensitive unit pitch.
7. manufacture method according to claim 1, is characterized in that, described the first thermoplastic material comprises paraffin or PUR.
8. manufacture method according to claim 1, is characterized in that, described predetermined thickness is 1 to 4 micron.
9. manufacture method according to claim 1, is characterized in that, the width of described the second groove is no more than the width of described the first groove.
10. manufacture method according to claim 6, is characterized in that, the width of described the second groove is no more than 0.3 micron.
11. manufacture method according to claim 1, is characterized in that, described interior thickness is not less than 5 microns.
12. manufacture method according to claim 1, is characterized in that, also comprises step:
G. cut described chip substrate to separate described at least one photosensitive unit array.
13. manufacture method according to claim 12, is characterized in that, described cutting step comprises: adopt laser cutting or machine cuts mode to cut described chip substrate.
14. manufacture method according to claim 12, is characterized in that, also comprises step:
H., transfer device is provided, and described transfer device has transfer face and pipeline, and the opening of described pipeline one end is positioned at described transfer face middle part;
I. adopt the second thermoplastic material that described photosensitive unit array is bonded on described transfer face;
J. heat described support substrate so that the viscosity of described the first thermoplastic material, lower than the viscosity of described the second thermoplastic material, relatively moves described support substrate and described transfer device so that described photosensitive unit array from described support substrate separation.
15. manufacture method according to claim 14, is characterized in that, also comprises:
K. heat described transfer device, and form projection to injecting fluid in described pipeline with the middle part at described photosensitive unit array;
L. the photosensitive unit array of described projection is fitted on the adjusting base of the concave surface with reservation shape, perhaps the photosensitive unit array of described projection be fitted in to the adjusting base of the concave surface with reservation shape and have between the adjusting device of convex surface of reservation shape, take the Adjusting Shape of the photosensitive unit array of described projection as consistent with described reservation shape;
M., the packaging part of the curved surface with described reservation shape is provided, and described photosensitive unit array is sticked in described curved surface.
16. manufacture method according to claim 14, is characterized in that, described step j comprises: the direction along described support substrate plane moves described transfer device.
17. according to the described manufacture method of claims 14 or 15, it is characterized in that, described the second thermoplastic material comprises paraffin or hot melt agent.
18. manufacture method according to claim 15, is characterized in that, described fluid comprises air, nitrogen or described the second thermoplastic material.
19. manufacture method according to claim 15, is characterized in that, described photosensitive unit array comprises a plurality of pins, and the described curved surface of described packaging part comprises pad corresponding to a plurality of and described pin, and described step m further comprises:
Coated with conductive glue on the described pad of described curved surface, and apply insulating cement at the non-welding disking area of described curved surface;
Described photosensitive unit array is sticked in described curved surface.
20. manufacture method according to claim 12, is characterized in that, also comprises:
H., extraction element is provided, and described extraction element has transfer face and pipeline, and the opening of described pipeline one end is positioned at described transfer face middle part;
I. adopt the second thermoplastic material that described photosensitive unit array is bonded on described transfer face;
J. heat described support substrate so that the viscosity of described the first thermoplastic material lower than the viscosity of described the second thermoplastic material, and the edge of described photosensitive unit array is adsorbed on described transfer face, vertically mobile described extraction element also injects fluid in described pipeline, so that described photosensitive unit array and described support substrate separation form projection at the middle part of described photosensitive unit array;
K. the photosensitive unit array of described projection is fitted in the adjusting base of the concave surface with reservation shape, perhaps the photosensitive unit array of described projection be fitted in to the adjusting base of the concave surface with reservation shape and have between the adjusting device of convex surface of reservation shape, take the Adjusting Shape of the photosensitive unit array of described projection as consistent with described reservation shape;
L., the packaging part of the curved surface with described reservation shape is provided, and described photosensitive unit array is sticked in described curved surface.
21. manufacture method according to claim 20, is characterized in that, described fluid comprises air, nitrogen or described the second thermoplastic material.
22. according to the described manufacture method of claim 20 or 21, it is characterized in that, described the second thermoplastic material comprises paraffin or hot melt agent.
23. manufacture method according to claim 20, is characterized in that, described photosensitive unit array comprises a plurality of pins, and the described curved surface of described packaging part comprises pad corresponding to a plurality of and described pin, and described step l further comprises:
Coated with conductive glue on the described pad of described curved surface, and apply insulating cement at the non-welding disking area of described curved surface;
Described photosensitive unit array is sticked in described curved surface.
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| CN 201110382619 CN102437169B (en) | 2011-11-25 | 2011-11-25 | Manufacturing method of image sensor |
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| CN102983144B (en) * | 2012-11-30 | 2015-02-11 | 格科微电子（上海）有限公司 | Wafer level packaging method of image sensor |
| CN104091814A (en) * | 2014-06-30 | 2014-10-08 | 上海集成电路研发中心有限公司 | Pixel array of CMOS image sensor |
| CN104270555B (en) * | 2014-09-19 | 2018-01-26 | 上海集成电路研发中心有限公司 | A kind of curved surface cmos image sensor camera module |
| CN112039460B (en) * | 2019-07-19 | 2022-05-10 | 中芯集成电路（宁波）有限公司 | Film bulk acoustic resonator and manufacturing method thereof |
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| CN100352067C (en) * | 2003-09-23 | 2007-11-28 | 深圳市方大国科光电技术有限公司 | Reduction method of sapphire substrate |
| KR101284475B1 (en) * | 2005-11-22 | 2013-07-15 | 가부시끼가이샤 하이테크 시스템즈 | Method of manufacturing semiconductor device |
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