CN102437068B - Hole measurement pattern and hole measurement method - Google Patents
Hole measurement pattern and hole measurement method Download PDFInfo
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- CN102437068B CN102437068B CN201110366174.6A CN201110366174A CN102437068B CN 102437068 B CN102437068 B CN 102437068B CN 201110366174 A CN201110366174 A CN 201110366174A CN 102437068 B CN102437068 B CN 102437068B
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Abstract
The invention provides a hole measurement pattern and a hole measurement method. The hole measurement pattern comprises a first part, a second part and a third part, wherein the first part is a repeated pattern area at least comprising three rows and three columns of repeated patterns; the second part is a pattern formed after a T-shaped pattern turns 90 degrees; the third part is a T-shaped pattern; the second part is arranged at the side of the first part; and the third part is arranged at the upper part or lower part of the first part. The pattern and the method have the following beneficial effects: the measurement of the critical dimension of the contact hole and/or through hole layer dense area is improved, and auxiliary measurement patterns are arranged in the contact hole and through hole layer dense pattern areas, thus improving the measurement condition of the critical dimension of the area.
Description
Technical field
The present invention relates to field of semiconductor manufacture, more particularly, the present invention relates to a kind of hole and measure figure and utilize this hole to measure the hole method for measurement that figure carries out the hole measurement.
Background technology
During semiconductor chip is manufactured, after lithographic definition one deck circuit, need to measure some dimension of picture and come monitoring photoetching technology whether up to standard.Therefore, generally adopt various measurement figures to measure various circuitous patterns, such as lines, groove, hole etc.
Along with the development of integrated circuit technique, critical size is more and more less, and this has brought high requirement to the auto-measuring of integrated circuit critical size.
For the key stratum of for example contact hole and through hole and so on, because the figure itself measured is hole (hole), therefore, with respect to common linearity, measure figure, the measurement difficulty of the key stratum of contact hole and through hole and so on is just larger.If need to measure the hole of large stretch of repetition close quarters, more difficult; And, for contact hole and the such key stratum of through hole, many times we need to measure the critical size of a plurality of positions; Therefore, if the position that the hole of large stretch of close quarters is first measuring point and this first measuring point does not have centering true, bring deviation can to the measurement of back measuring point, thereby cause the failure of auto-measuring.So we are badly in need of finding a kind of good method for measurement that measures accurately large stretch of close quarters hole.
Summary of the invention
Technical problem to be solved by this invention is for there being above-mentioned defect in prior art, thereby provide a kind of, can measure figure and hole method for measurement by the hole of improving its key dimension measurement situation contact hole and the intensive figure region division of via layer auxiliary quantity mapping shape.
According to a first aspect of the invention, provide a kind of hole to measure figure, it comprises: first, second portion and third part; Wherein, described first is the repetitive pattern zone that at least comprises the repetitive pattern of three row three row, and described second portion is the figure that a T-shape pattern reversal 90 degree form afterwards, and described third part is a T-shape figure.
Preferably, described second portion is positioned at described first sidepiece, and third part is positioned at described first top or bottom.
Preferably, described second portion and described third part in the horizontal direction and the dimension of picture ratio of the size of vertical direction and actual measurement 1: 1-3: between 1.
Preferably, described second portion and described third part are arranged on the original position that measures the position rows and columns simultaneously.
Preferably, the distance between described second portion and described third part and described first can not affect the minimum range of main graphic critical size under given photoetching process condition.
According to first aspect present invention, provide a kind of hole of improving contact hole and/or via layer close quarters measurement critical size to measure figure, thereby wherein by contact hole and the intensive figure region division of via layer auxiliary quantity mapping shape, having improved its key dimension measurement situation.Thus, measure according to the hole of first aspect present invention the measurement that figure has improved contact hole and/or via layer close quarters critical size; Improved the success rate of scanning electron microscopy auto-measuring.
According to a second aspect of the invention, provide a kind of utilization to measure according to the described hole of first aspect present invention the hole method for measurement that figure carries out the hole measurement, it comprises: by exposure and development, the contact hole on photomask and through hole key dimension measurement figure are transferred in photoresist film; Utilize the live width scanning electron microscopy, by the auxiliary pattern of horizontal and vertical direction, determine the first measuring point position; And execution contact hole and/or through hole key dimension measurement.
Measure figure owing to having adopted according to the described hole of first aspect present invention, therefore, it will be appreciated by persons skilled in the art that according to the hole method for measurement of second aspect present invention and can realize that equally hole according to a first aspect of the invention measures the achieved useful technique effect of figure.; according to second aspect present invention; a kind of hole method for measurement that improves contact hole and/or via layer close quarters measurement critical size is provided, thereby wherein by contact hole and the intensive figure region division of via layer auxiliary quantity mapping shape, having improved its key dimension measurement situation.Thus, improved the measurement of contact hole and/or via layer close quarters critical size according to the hole method for measurement of second aspect present invention; Improved the success rate of scanning electron microscopy auto-measuring.
The accompanying drawing explanation
By reference to the accompanying drawings, and, by reference to following detailed description, will more easily to the present invention, more complete understanding be arranged and more easily understand its advantage of following and feature, wherein:
Fig. 1 schematically shows according to the hole of the embodiment of the present invention and measures figure.
Fig. 2 schematically shows the first that measures figure according to the hole of the embodiment of the present invention.
Fig. 3 schematically shows the second portion that measures figure according to the hole of the embodiment of the present invention.
Fig. 4 schematically shows the third part that measures figure according to the hole of the embodiment of the present invention.
Fig. 5 schematically shows hole according to another embodiment of the present invention and measures figure.
It should be noted that, accompanying drawing is for the present invention is described, and unrestricted the present invention.Note, the accompanying drawing that means structure may not be to draw in proportion.And, in accompanying drawing, identical or similar element indicates identical or similar label.
Embodiment
In order to make content of the present invention more clear and understandable, below in conjunction with specific embodiments and the drawings, content of the present invention is described in detail.
Fig. 1 schematically shows according to the hole of the embodiment of the present invention and measures figure.As shown in Figure 1, according to the hole measurement figure of the embodiment of the present invention, comprise: the A of first, second portion B and third part C.
Fig. 2 schematically shows the A of first that measures figure according to the hole of the embodiment of the present invention.As shown in Figure 2, the A of first is an intensive repetitive pattern zone, and this intensive repetitive pattern zone at least comprises the height repetitive pattern A1 of three row three row.
Fig. 3 schematically shows the second portion B that measures figure according to the hole of the embodiment of the present invention.Second portion B is that a T-shape turns over after turning 90 degrees the figure formed counterclockwise.
Fig. 4 schematically shows the third part C that measures figure according to the hole of the embodiment of the present invention.Third part C is a T-shaped pattern.
Refer again to Fig. 1, can find out, second portion B and third part C are in 90 degree right angles.
And second portion B is positioned at the top of the A of first, second portion C is positioned at the left side of the A of first.
Second portion B and third part C can be used as auxiliary quantity mapping shape, and they are arranged on the original position that measures the position rows and columns simultaneously.Specifically, as shown in Figure 1, second portion B and third part C are positioned at the third line as original position and the tertial position of the A of first.
Preferably, as the second portion B of auxiliary quantity mapping shape and third part C in the horizontal direction and the dimension of picture ratio of the size of vertical direction and actual measurement 1: 1-3: between 1.
Further preferably, as the second portion B of auxiliary quantity mapping shape and third part C and as the distance between the A of first of main graphic, under given photoetching process condition, can not affect the minimum range of main graphic critical size.
In embodiment of the method for the present invention, the method for utilizing the measurement figure of the hole according to the embodiment of the present invention shown in Fig. 1 to carry out the hole measurement can comprise the steps:
1) by exposure and development, the contact hole on photomask and through hole key dimension measurement figure (A of first, second portion B and third part C) are transferred in photoresist film.
2) utilize the live width scanning electron microscopy, by the auxiliary pattern (second portion B and third part C) of horizontal and vertical direction, determine the first measuring point position.
3) carry out contact hole and/or through hole key dimension measurement.
Thus, a kind of by improve the method for its key dimension measurement situation contact hole and the intensive figure region division of via layer auxiliary quantity mapping shape thereby embodiment of the method for the present invention provides.
Fig. 5 schematically shows hole according to another embodiment of the present invention and measures figure.Specifically, although the second portion B of take is a T-shape to turn over counterclockwise after turning 90 degrees the figure formed and measures figure as example has illustrated according to the hole of inventive embodiments, but, in alternative embodiment, second portion B is that a T-shape turns over after turning 90 degrees the figure formed clockwise, like this, second portion B and third part C still are in 90 degree right angles, but at this moment second portion B will be positioned at the right side of the A of first.
Obviously, the embodiment shown in Fig. 1 and Fig. 5 all shows the situation that second portion B is positioned at the top of the A of first, still, it will be appreciated by those skilled in the art that, the mode that second portion B is positioned at the bottom of the A of first is also feasible.
Be understandable that, although the present invention with the preferred embodiment disclosure as above, yet above-described embodiment is not in order to limit the present invention.For any those of ordinary skill in the art, do not breaking away from technical solution of the present invention scope situation, all can utilize the technology contents of above-mentioned announcement to make many possible changes and modification to technical solution of the present invention, or be revised as the equivalent embodiment of equivalent variations.Therefore, every content that does not break away from technical solution of the present invention,, all still belong in the scope of technical solution of the present invention protection any simple modification made for any of the above embodiments, equivalent variations and modification according to technical spirit of the present invention.
Claims (5)
1. a utilization measures according to a hole hole method for measurement that figure carries out the hole measurement, it is characterized in that, described hole measures figure and comprises: first, second portion and third part; Wherein, described first is the repetitive pattern zone that at least comprises the repetitive pattern of three row three row, described second portion is the figure that a T-shape pattern reversal 90 degree form afterwards, described third part is a T-shape figure, described second portion and third part are in 90 degree right angles, described first is figure to be measured, and described second portion and third part are auxiliary pattern; Described hole method for measurement comprises:
By exposure and development, the contact hole on photomask and through hole key dimension measurement figure are transferred in photoresist film;
Utilize the live width scanning electron microscopy, by the auxiliary pattern of horizontal and vertical direction, determine the first measuring point position; And
Carry out contact hole and/or through hole key dimension measurement.
2. hole according to claim 1 method for measurement, is characterized in that, described second portion is positioned at described first sidepiece, and third part is positioned at described first top or bottom.
3. hole according to claim 1 and 2 method for measurement, is characterized in that, described second portion and described third part in the horizontal direction and the dimension of picture ratio of the size of vertical direction and actual measurement between 1:1-3:1.
4. hole according to claim 1 and 2 method for measurement, is characterized in that, described second portion and described third part are arranged on the original position that measures the position rows and columns simultaneously.
5. hole according to claim 1 and 2 method for measurement, is characterized in that, the distance between described second portion and described third part and described first can not affect the minimum range of main graphic critical size under given photoetching process condition.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110366174.6A CN102437068B (en) | 2011-11-17 | 2011-11-17 | Hole measurement pattern and hole measurement method |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201110366174.6A CN102437068B (en) | 2011-11-17 | 2011-11-17 | Hole measurement pattern and hole measurement method |
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| CN102437068A CN102437068A (en) | 2012-05-02 |
| CN102437068B true CN102437068B (en) | 2014-01-08 |
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Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102944983A (en) * | 2012-11-28 | 2013-02-27 | 上海华力微电子有限公司 | Method for improving key dimension measurement of pattern to be measured |
| CN104915516B (en) * | 2015-06-29 | 2018-02-27 | 上海华力微电子有限公司 | A kind of application process of mask plate and isolated hole addressing pattern in the measurements |
| CN106783659B (en) * | 2016-12-23 | 2019-06-28 | 武汉新芯集成电路制造有限公司 | The method of graphics test structure and preparation method thereof, measurement pattern size |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1658071A (en) * | 2003-11-24 | 2005-08-24 | 三星电子株式会社 | Overlay mark for measuring and correcting alignment errors |
| CN102109771A (en) * | 2011-01-27 | 2011-06-29 | 上海宏力半导体制造有限公司 | Method for detecting semiconductor device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| KR20030002279A (en) * | 2001-06-30 | 2003-01-08 | 주식회사 하이닉스반도체 | A method for forming a test pattern of semiconductor device |
| CN101782720A (en) * | 2009-01-21 | 2010-07-21 | 钜晶电子股份有限公司 | Method, control wafer and photomask for measuring and monitoring numerical aperture of exposure machine |
| KR101160010B1 (en) * | 2009-03-27 | 2012-06-25 | 에스케이하이닉스 주식회사 | Method for processing optical proximity correction |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1658071A (en) * | 2003-11-24 | 2005-08-24 | 三星电子株式会社 | Overlay mark for measuring and correcting alignment errors |
| CN102109771A (en) * | 2011-01-27 | 2011-06-29 | 上海宏力半导体制造有限公司 | Method for detecting semiconductor device |
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