CN102430865B - Welding method of target material and back plate and target material component formed thereby - Google Patents
Welding method of target material and back plate and target material component formed thereby Download PDFInfo
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- CN102430865B CN102430865B CN201110321235.7A CN201110321235A CN102430865B CN 102430865 B CN102430865 B CN 102430865B CN 201110321235 A CN201110321235 A CN 201110321235A CN 102430865 B CN102430865 B CN 102430865B
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Abstract
The invention discloses a welding method of a target material and a back plate, and the method comprises the following steps of: forming multiple dovetail grooves on the back surface of the target material; forming multiple dovetail-shaped bulges matched with the dovetail grooves on the front surface of the back plate; overlapping the target material and the back plate, and occluding the dovetail-shaped bulges with the dovetail grooves; processing the center areas of the target material and the back plate by a static pressure method; and welding the edge combining area of the target material and the back plate by use of an electron beam. The invention also provides a target material component which comprises the target material and the back plate, wherein multiple dovetail grooves are formed on the back surface of the target material; and multiple dovetail-shaped bulges matched with the dovetail grooves are formed on the front surface of the back plate. By adopting the technical scheme of the invention, the adoption of solder for the brazing method in the prior art can be avoided, the cost is lowered, the export of the formed target material component is not influenced by the restriction of solder, and the aim of environmental conservation is achieved; and meanwhile, the hot isostatic pressing with relatively high requirements on the implementation conditions is avoided, and the technology is simple and easy to operate.
Description
Technical field
The present invention relates to field of semiconductor manufacture, particularly relate to the welding method of a kind of target and backboard and the target material assembly of formation.
Background technology
In the semiconductor industry, target material assembly is made up of the target meeting sputtering performance and the backboard that is combined, has some strength with described target.Backboard can be assembled in sputtering machine table at described target material assembly and play a supporting role, and has effect of heat conduction.In large scale integrated circuit manufacture, the normal aluminium target that uses carries out physical vaporous deposition (PVD) plated film to form barrier layer, aluminium target uses magnetron sputtering in sputter procedure, the high aluminum of the higher and heat conduction of usual working strength, electric conductivity is as back veneer material, but aluminium target and back veneer material must be welded together the target material assembly that just can be processed into semi-conductor industry and use, make it both can reliably be arranged on sputtering machine table, can effectively control to sputter under magnetic field, electric field action again simultaneously.
In prior art, have soldering or thermal diffusion that target is conventional with the welding manner of backboard are welded.Method for welding principle is the filling metal (being called solder or solder) utilizing fusing point lower than mother metal, after heat fused, utilizes liquid solder to soak mother metal, fill play movement and with the counterdiffusion of mother metal phase, realize connect welding method.Thermal diffusion welding Method And Principle utilizes the material surface contacted with each other, and close under uniform temperature, pressure effect, local produces plastic deformation, and phase counterdiffusion between atom, formed new diffusion once at section, thus realize reliably having connected welding process.
But when aluminum target blank and aluminium backboard being carried out thermal diffusion and welding, due to the fusing point of metal Aluminum-aluminum alloy lower (about 650 DEG C), and chemical property is comparatively active, when adopting the conventional equipment that connects to carry out thermal diffusion welding very much, temperature need be heated to more than 200 DEG C, face of weld oxidation is very serious, thus Metal Contact face atom can not effectively be spread, and is difficult to reach desirable welding effect.Therefore for improving the bond strength of the rear gained assembly of welding, general conventional method has high temperature insostatic pressing (HIP) to weld.
But the present inventor finds in actual use, the mode of soldering is adopted to need solder, solder itself needs cost, and the one-tenth departmentalism of solder is identical, and there is use restriction in some country to material, therefore, adopt the target material assembly after some solder welding, have export restrictions problem.And the equipment adopting high temperature insostatic pressing (HIP) to weld is more expensive, there is the company of use ability less.
In view of this, be necessary the welding manner proposing a kind of new target and backboard in fact, require higher problem with the realization condition of the export restrictions and high temperature insostatic pressing (HIP) weldering that overcome soldering.
Summary of the invention
The problem that the present invention solves is the welding manner proposing a kind of new target and backboard, with solve in prior art adopt the target material assembly of soldering to have export restrictions and adopt high temperature insostatic pressing (HIP) to weld realize the higher problem of hardware requirement.
For solving the problem, the invention provides the welding method of a kind of target and backboard, comprising:
Form multiple dovetail groove at the back side of target, form the multiple dovetail shapeds mated with dovetail groove in the front of backboard protruding;
By target and the superimposed placement of backboard, and dovetail shaped projection is interlocked with dovetail groove;
Adopt static pressure mode process target and backboard central area, utilize the edge calmodulin binding domain CaM of electron beam welding target and backboard.
Alternatively, the material of target and backboard is all aluminium.
Alternatively, described dovetail groove is processed to form by lathe turning.
Alternatively, described dovetail shaped projects through lathe turning and is processed to form.
Alternatively, described electron beam welding step is carried out in a vacuum.
Alternatively, the speed of welding scope of described electron beam welding is 10-20mm/s, and inputting fast stream scope is 40-60mA, and focus current scope is 600-700mA.
Alternatively, the pressure limit 2500 tons to 3500 tons of described static pressure step.
The present invention also provides a kind of target material assembly, comprises target and backboard, and wherein, the back side of described target is formed with multiple dovetail groove, and it is protruding that the front of described backboard is formed with the multiple dovetail shapeds mated with dovetail groove.
Alternatively, the material of described target and backboard is all aluminium.
Alternatively, described each dove-tail circularizes structure, and described each dovetail shaped projection also forms loop configuration.
Alternatively, the depth bounds of described dovetail groove is 1.2-2.2 millimeter.
Alternatively, also equidistant between the dovetail shaped projection of described adjacent annular structure between the dovetail groove of described adjacent annular structure equidistantly.
Alternatively, described spacing range is 2.5-3.5 millimeter.
Compared with prior art, the present invention has the following advantages: adopt and first form multiple dovetail groove at the back side at target, forms the multiple dovetail shapeds mated with dovetail groove protruding in the front of backboard; Then be interlocked protruding for dovetail shaped with dovetail groove; Target and backboard central area adopt static pressure mode afterwards, utilize the edge calmodulin binding domain CaM of electron beam welding target and backboard; Avoid in prior art the mode adopting soldering, need solder be adopted, reduce cost, and the target material assembly formed can not affect outlet because of solder restriction, and achieve environmental protection object, avoid employing simultaneously and realize the higher high temperature insostatic pressing (HIP) weldering of hardware requirement, technique is simple to operation.
Accompanying drawing explanation
Fig. 1 is the flow chart of the welding method of target provided by the invention and backboard;
Fig. 2 is the top view at the target back side;
Fig. 3 is the top view in backboard front;
Fig. 4 is the sectional view along the A-A straight line in Fig. 2;
Fig. 5 is the sectional view along the B-B straight line in Fig. 3;
Fig. 6 is the welding method of target and the backboard provided according to Fig. 1, the target material assembly structural representation of formation.
Detailed description of the invention
The present invention adopts and first forms multiple dovetail groove at the back side at target, forms the multiple dovetail shapeds mated with dovetail groove protruding in the front of backboard; Then by target and the superimposed placement of backboard, and dovetail shaped projection is interlocked with dovetail groove; Adopt static pressure mode process target and backboard central area afterwards, utilize the edge calmodulin binding domain CaM of electron beam welding target and backboard; Avoid in prior art the mode adopting soldering, solder need be adopted, reduce cost, and the target material assembly formed does not use solder, therefore outlet can not be affected because of solder restriction, and achieve environmental protection object, avoid the high temperature insostatic pressing (HIP) weldering adopting realization condition requirement higher, technique is simple to operation simultaneously.
For enabling above-mentioned purpose of the present invention, feature and advantage more become apparent, and are described in detail the specific embodiment of the present invention below in conjunction with accompanying drawing.
Figure 1 shows that the flow chart of the welding method of target provided by the invention and backboard, below in conjunction with Fig. 1, introduce the specific embodiment of the present invention in detail.
First perform step S11, form multiple dovetail groove 111 at the back side of target 11, form multiple dovetail shaped projections 121 of mating with dovetail groove 111 in the front of backboard 12; As shown in Fig. 2, Fig. 3, Fig. 4 and Fig. 5, wherein, Fig. 2 is the top view at target 11 back side, and Fig. 3 is the top view in backboard 12 front, and Fig. 4 is the sectional view along the A-A straight line in Fig. 2, and Fig. 5 is the sectional view along the B-B straight line in Fig. 3.
In the present embodiment, be aluminium target with target 11, backboard 12 for aluminium backboard be example, be understandable that, target 11 also can select the target of the material of other required sputtering such as copper, chromium, the copper backboard that backboard 12 also can select heat conductivility excellent, when target 11 is chosen as other material, the working depth of dovetail groove 111 and processing method can adjust as required, similarly, when backboard 12 is chosen as other material, the working height of dovetail shaped projection 121 and processing method also can adjust as required.
In the present embodiment, dovetail groove 111 goes out multiple ring-shaped grooves of a circle circle at target back side car by lathe, and the shape of this groove is see Fig. 2, and the cross section of this groove as shown in Figure 4, is swallowtail shape, therefore, is called dovetail groove 111.
For ensureing the welding effect of aluminium target 11 and aluminium backboard 12, the depth bounds of described dovetail groove is 1.2-2.2 millimeter.
In the present embodiment, described spacing range is 2.5-3.5 millimeter between the dovetail groove 111 of described adjacent annular structure equidistantly.In other embodiments, can need to be set to unequal-interval according to welding between the dovetail groove 111 of described adjacent annular structure.
Need to mate with dovetail shaped projection 121 with the dovetail groove 111 on backboard 12 owing to being separately positioned on target 11, therefore, aluminium backboard 12 in the present embodiment also needs the multiple annular dovetail shaped projection 121 being gone out a circle circle by lathe turning, the shape of this dovetail shaped projection 121 is see Fig. 3, and the cross section of this dovetail shaped projection 121 as shown in Figure 5.
In the present embodiment, between the dovetail shaped projection 121 of described adjacent annular structure equidistantly, described spacing range is 2.5-3.5 millimeter.In other embodiments, can need to be set to unequal-interval according to welding between the dovetail shaped projection 121 of described adjacent annular structure.
Then perform step S12, by target 11 and the superimposed placement of backboard 12, and dovetail shaped protruding 121 is interlocked with dovetail groove 111, as shown in Figure 6.
Then perform step S13, target 11 and backboard 12 central area adopt the process of common static pressure mode, utilize the edge calmodulin binding domain CaM of electron beam welding target 11 and backboard 12.
Owing to have employed the mode of common static pressure, the mode pressure requirements of this common static pressure is at 2500 tons to 3500 tons, first the mode of common static pressure is adopted to pressurize to target and backboard central area at target 11 and the central area of backboard 12, after carrying out 1 hour to 4 hours, again vacuum electron beam welding is carried out to both edge calmodulin binding domain CaMs afterwards, can obtain and the mode of employing soldering of the prior art and the not poor upper and lower target material assembly of hot isostatic press welding mode firmness, but realizing technological requirement reduces a lot, and does not have export restrictions.
This edge in conjunction with regional location see region shown in the dotted line frame in Fig. 6.
In specific implementation process, for ensureing welding effect, the pressure limit of described static pressure 2500 tons to 3500 tons.
Described electron beam welding step completes in a vacuum, and this is because target 11 and backboard 12 are formed in target material assembly process welding, and has higher requirements to the firmness of welding and the quality of weld seam, can make the chemical composition stability of commissure and pure in vacuum.Secondly, electron beam welding speed is fast, and target 11 is little with the thermal diffusion region on backboard 12, and thus, before and after welding, target 11 is little with the thermal deformation of backboard 12.In addition, electro-beam welding process can adopt computer program to control, and this can realize the accurate control of technological parameter further, can meet the batch processing requirement of target material assembly.
Although electron beam welding has above advantage, but will realize the best of breed of above-mentioned advantage, strictly need control the parameter of welding, this parameter is mainly speed of welding, input line and focus current.
And, relation between these three parameters non-linear relation, the present inventor finds in practice, when the speed of welding scope of electron beam welding is 10-20mm/s, inputting fast stream scope is 40-60mA, focus current scope is 600-700mA, the welding procedure that this group parameters combination is carried out, and can meet the quality requirement of target material assembly.
The target provided according to Fig. 1 and the welding method of backboard, the target material assembly structural representation formed as shown in Figure 6, this target material assembly, comprise aluminium target 11 and aluminium backboard 12, wherein, the back side of described aluminium target 11 is formed with multiple dovetail groove (mark), and the front of described aluminium backboard 12 is formed with multiple dovetail shaped projections (mark) of mating with dovetail groove.
Further, described each dovetail groove 111 forms loop configuration, and described each dovetail shaped projection 121 also forms loop configuration, and the depth bounds of this dovetail groove is 1.2-2.2 millimeter.
Further, between the dovetail groove 111 of described adjacent annular structure equidistantly, also equidistant between the dovetail shaped projection 121 of described adjacent annular structure, this spacing range is 2.5-3.5 millimeter.
Compared with prior art, the present invention has the following advantages: adopt and first form multiple dovetail groove 111 at the back side at target 11, form multiple dovetail shaped projections 121 of mating with dovetail groove 111 in the front of backboard 12; Then dovetail shaped protruding 121 is interlocked with dovetail groove 111; Target 11 and backboard 12 central area adopt static pressure mode afterwards, utilize the edge calmodulin binding domain CaM of electron beam welding target 11 and backboard 12; Avoid in prior art the mode adopting soldering, need solder be adopted, reduce cost, and the target material assembly formed can not affect outlet because of solder restriction, and achieve environmental protection object, avoid the high temperature insostatic pressing (HIP) weldering adopting realization condition requirement higher, technique is simple to operation simultaneously.
Although the present invention with preferred embodiment openly as above; but it is not for limiting the present invention; any those skilled in the art without departing from the spirit and scope of the present invention; the Method and Technology content of above-mentioned announcement can be utilized to make possible variation and amendment to technical solution of the present invention; therefore; every content not departing from technical solution of the present invention; the any simple modification done above embodiment according to technical spirit of the present invention, equivalent variations and modification, all belong to the protection domain of technical solution of the present invention.
Claims (11)
1. a welding method for target and backboard, is characterized in that, comprising:
Multiple dovetail groove is formed at the back side of target, the multiple dovetail shapeds mated with dovetail groove are formed protruding in the front of backboard, described each dove-tail circularizes structure, described each dovetail shaped projection also forms loop configuration, between the dovetail groove of described adjacent annular structure equidistantly, also equidistant between the dovetail shaped projection of described adjacent annular structure;
By target and the superimposed placement of backboard, and dovetail shaped projection is interlocked with dovetail groove;
Adopt static pressure mode process target and backboard central area, utilize the edge calmodulin binding domain CaM of electron beam welding target and backboard.
2. the welding method of target according to claim 1 and backboard, is characterized in that, the material of described target and backboard is all aluminium.
3. the welding method of target according to claim 1 and 2 and backboard, is characterized in that, described dovetail groove is processed to form by lathe turning.
4. the welding method of target according to claim 1 and 2 and backboard, is characterized in that, described dovetail shaped projects through lathe turning and is processed to form.
5. the welding method of target according to claim 2 and backboard, is characterized in that, described electron beam welding step is carried out in a vacuum.
6. the welding method of target according to claim 5 and backboard, is characterized in that, the speed of welding scope of described electron beam welding is 10-20mm/s, and input line scope is 40-60mA, and focus current scope is 600-700mA.
7. the welding method of target according to claim 2 and backboard, is characterized in that, the pressure limit of described static pressure step 2500 tons to 3500 tons.
8. a target material assembly, comprise target and backboard, it is characterized in that, the back side of described target is formed with multiple dovetail groove, it is protruding that the front of described backboard is formed with the multiple dovetail shapeds mated with dovetail groove, described each dove-tail circularizes structure, described each dovetail shaped projection also forms loop configuration, between the dovetail groove of described adjacent annular structure equidistantly, also equidistant between the dovetail shaped projection of described adjacent annular structure, described dovetail shaped is protruding to be interlocked with dovetail groove, adopt static pressure mode process target and backboard central area, utilize the edge calmodulin binding domain CaM of electron beam welding target and backboard.
9. target material assembly according to claim 8, is characterized in that, the material of described target and backboard is all aluminium.
10. target material assembly according to claim 8, is characterized in that, the depth bounds of described dovetail groove is 1.2-2.2 millimeter.
11. target material assemblies according to claim 8, is characterized in that, described spacing range is 2.5-3.5 millimeter.
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| CN201110321235.7A CN102430865B (en) | 2011-10-20 | 2011-10-20 | Welding method of target material and back plate and target material component formed thereby |
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| CN201110321235.7A CN102430865B (en) | 2011-10-20 | 2011-10-20 | Welding method of target material and back plate and target material component formed thereby |
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| CN102430865B true CN102430865B (en) | 2015-07-08 |
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Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104646817A (en) * | 2014-12-22 | 2015-05-27 | 有研亿金新材料有限公司 | Connection method of aluminum target material as sputtering target material and aluminum alloy backboard |
| CN107457495A (en) * | 2016-06-06 | 2017-12-12 | 宁波江丰电子材料股份有限公司 | The manufacture method of backboard and its manufacture method and target material assembly |
| CN108687492A (en) * | 2017-04-12 | 2018-10-23 | 宁波江丰电子材料股份有限公司 | The manufacturing method of target material assembly |
| CN108581169B (en) * | 2018-05-04 | 2020-01-14 | 宁波江丰电子材料股份有限公司 | Target assembly and processing method |
| CN111136396B (en) * | 2020-01-16 | 2021-08-10 | 宁波江丰电子材料股份有限公司 | Diffusion welding method for copper target and back plate |
| CN111421258A (en) * | 2020-04-09 | 2020-07-17 | 宁波江丰电子材料股份有限公司 | Welding method of high-purity aluminum target |
| CN114799453A (en) * | 2022-03-31 | 2022-07-29 | 宁波江丰电子材料股份有限公司 | Welding method of high-purity copper target |
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