CN102426281B - Longitudinal modulation optical voltage sensor - Google Patents
Longitudinal modulation optical voltage sensor Download PDFInfo
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- CN102426281B CN102426281B CN201110318747.8A CN201110318747A CN102426281B CN 102426281 B CN102426281 B CN 102426281B CN 201110318747 A CN201110318747 A CN 201110318747A CN 102426281 B CN102426281 B CN 102426281B
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Abstract
The invention discloses a longitudinal modulation optical voltage sensor, and relates to an optical voltage sensor, which solves the problem of influence of interference of an external electric field and non-uniform distribution of an inter-electrode electric field on measured voltage by using a longitudinal modulation mode, and has superior temperature stability. The sensor comprises optical fiber collimators, a zone plate polarizing prism, polarization beam splitting prism, a BGO (Bismuth Germanium Oxide) crystal, a metal electrode and an electrode lead, wherein a transparent conducting film is plated on two light transmitting surfaces of the BGO crystal and is adhered to the metal electrode through a conductive adhesive. Light beam is collimated through a first optical fiber collimator and irradiates into the BGO crystal after passing through the zone plate polarizing prism; detected voltage acts on the transparent conductive film of the BGO crystal through the electrode lead and the metal electrode; and the light beam emitted from the BGO crystal irradiates into the polarization beam splitting prism, is led to two vertical vibration directions to generate interference and emit respectively, and enters a second optical fiber collimator and a third optical fiber collimator to be coupled and output a light signal for measuring the voltage.
Description
Technical field
The present invention relates to a kind of voltage sensor, be specifically related to a kind of longitudinal modulation optical voltage sensor.
Background technology
In electric system; voltage transformer (VT) is to obtain continuous data and indispensable equipment is protected in the electric system operation; in recent years; raising along with voltage class of electric power system; the defective of traditional type voltage transformer (VT) highlights day by day; can't satisfy the demand, and optical voltage transformer receives much concern as a kind of alternative technology.The optical voltage transformer volume is little, lightweight, bandwidth, dynamic range large, numeral output, capacity is unrestricted and be convenient to be connected with computing machine, it does not have ferromagnetic saturated phenomenon, can not only measure metastability exchange voltage, also can measure the transient voltage that direct current or alternating current-direct current mix, in addition, optical voltage transformer also has good insulating, antijamming capability is strong, measurement sensitivity is good, the degree of accuracy advantages of higher.The optical voltage sensor that the present invention relates to is the core component that optical voltage transformer is realized measurement, and its performance directly affects the performance of mutual inductor.
Optical voltage sensor is to utilize the Pockels effect of electrooptical modulation crystal to realize voltage measurement.When the Pockels effect referred to apply external electric field on some crystal, the refractive index of crystal can change, and the optical effect that this variations in refractive index causes can accurately be measured by the method for polarization interference, thereby reached the purpose of measuring voltage.Optical voltage sensor based on the Pockels effect has two kinds of modulation systems, a kind ofly is laterally modulation (being that optical propagation direction and electric field are added perpendicular direction), and another kind is longitudinal modulation (be optical propagation direction with electric field added direction consistent).Laterally the beam propagation of modulation can not decayed by electrode, electrode material is selected well, sensor relatively simple for structure, therefore be widely used, but its shortcoming is the additional phase error that exists natural birefringence to cause, this phase differential is subject to the impact that ambient temperature changes, thereby reduces the job stability of sensor, simultaneously, the inhomogeneous measuring accuracy that also can reduce sensor of the interference of external electric field and interpolar Electric Field Distribution.comparatively speaking, the natural birefringence of longitudinal modulation is than laterally modulation is little many, sensor is acted upon by temperature changes less than horizontal modulation, and, be exactly that electric field intensity is along the definition of the line integral of free routing according to the point-to-point transmission potential difference (PD), voltage between longitudinal modulation two electrodes and the distribution of electric field are irrelevant, the inhomogeneous of the interference of external electric field and interpolar Electric Field Distribution can not impact voltage measurement, but, due to the optical direction of longitudinal modulation with to apply voltage direction consistent, require electrode to possess simultaneously good electric conductivity and higher transmittance, yet concerning most of materials, these two requirements are contradiction, therefore, the making of transparency electrode becomes the main cause that hinders the longitudinal modulation development.The present invention has solved this problem by the method at the logical optical surface evaporation indium tin oxide transparent conducting film (ITO) of electrooptical modulation crystal, and this film has following features: conduct electricity very well, resistivity is less than 10
-5Ω m, light transmission rate is high, can be greater than 85%, strong adhesion, stability is better, and ito thin film is current research and most widely used nesa coating, developed to get comparative maturity, realized commercialization, easily obtained, in addition, reasonable in design of the present invention, each optical element is by light path requirement accurate positioning, the insertion loss value of sensor is low, and simultaneously, insulating Design of the present invention meets the demands, make sensor possess enough electric strengths, and leave larger nargin.
Summary of the invention
The optical voltage sensor that the purpose of this invention is to provide a kind of longitudinal modulation, it is in order to solve measuring accuracy in prior art and to be subject to that external electric field is disturbed and the shortcoming of working sensor stability reduction when the impact of interpolar non-uniform electric and temperature variation.
It comprises the first optical fiber collimator 1, the second optical fiber collimator 9, the 3rd optical fiber collimator 10, band wave plate polarizing prism 2, polarization splitting prism 3, BGO crystal 4, the first metal electrode 5, the second metal electrode 6, the first contact conductor 7 and the second contact conductor 8.
the first optical fiber collimator 1 by the order that light passes through along the straight line coaxial arrangement, band wave plate polarizing prism 2, the first metal electrode 5, the BGO crystal 4, the second metal electrode 6, polarization splitting prism 3 and the second optical fiber collimator 9, 3 places are arranging the 3rd optical fiber collimator 10 at polarization splitting prism, described the 3rd optical fiber collimator 10 is vertical with above-mentioned straight line, described band wave plate polarizing prism 2 is formed by polarizing prism and quarter-wave plate gummed, wherein, the fast and slow axis of thoroughly shake direction and the quarter-wave plate of polarizing prism in angle of 45 degrees, the direction of thoroughly shaking of described polarization splitting prism 3 is with parallel or vertical with the direction of thoroughly shaking of polarizing prism in wave plate polarizing prism 2, described BGO crystal 4 is along (001), (100), (010) crystal face cutting, wherein two (001) faces are logical light face, be coated with nesa coating on it, nesa coating is further bonding by conducting resinl and the first metal electrode 5 and the second metal electrode 6, the center of the first metal electrode 5 has the first light hole 5-1, upper end welding the first contact conductor 7, the center of the second metal electrode 6 has the second light hole 6-1, upper end welding the second contact conductor 8, light beam can unobstructedly pass from the first light hole 5-1 and the second light hole 6-1, simultaneously, tested voltage is by the first contact conductor 7, the second contact conductor 8 and the first metal electrode 5, the second metal electrode 6 acts on the nesa coating of two logical light faces of BGO crystal 4, the BGO crystal 4 is in relatively equally distributed electric field, under the effect of electric field, BGO crystal 4 generation induced birefringence, its two induction main shafts are along the diagonal of crystal, simultaneously with parallel with the fast and slow axis direction of quarter-wave plate in wave plate polarizing prism 2.
the invention has the beneficial effects as follows: the mode that adopts longitudinal modulation, effectively raise accuracy of measurement and the temperature stability of optical voltage sensor, through test for identification, all technical of the present invention all reaches former designing requirement, the linearity≤± 0.2%, running temperature is in-40～+ 60 ℃ of scopes, after taking indemnifying measure, measuring error≤± 0.1%, when existing external electric field to disturb, need not compensation, measuring error≤± 0.1%, accuracy of measurement reaches 0.2 grade of measurement of power, for the practical and industrialization of optical voltage sensor provides ripe Design and manufacture experience.
Description of drawings
Fig. 1 is structural representation of the present invention, and Fig. 2 is A-A diagrammatic cross-section of the present invention, and Fig. 3 is the schematic diagram of BGO crystal of the present invention.
Embodiment
Embodiment one: illustrate present embodiment below in conjunction with Fig. 1, it comprises the first optical fiber collimator 1, the second optical fiber collimator 9, the 3rd optical fiber collimator 10, band wave plate polarizing prism 2, polarization splitting prism 3, BGO crystal 4, the first metal electrode 5, the second metal electrode 6, the first contact conductor 7 and the second contact conductor 8
the first optical fiber collimator 1 by the order that light passes through along the straight line coaxial arrangement, band wave plate polarizing prism 2, the first metal electrode 5, the BGO crystal 4, the second metal electrode 6, polarization splitting prism 3, the second optical fiber collimator 9, be arranged vertically the 3rd optical fiber collimator 10 at polarization splitting prism 3 places and above-mentioned straight line, described band wave plate polarizing prism 2 is formed by polarizing prism and quarter-wave plate gummed, wherein, the fast and slow axis of thoroughly shake direction and the quarter-wave plate of polarizing prism in angle of 45 degrees, the direction of thoroughly shaking of described polarization splitting prism 3 is with parallel or vertical with the direction of thoroughly shaking of polarizing prism in wave plate polarizing prism 2, described BGO crystal 4 is along (001), (100), (010) crystal face cutting, wherein two (001) faces are logical light face, be coated with nesa coating on it, nesa coating is further bonding by conducting resinl and the first metal electrode 5 and the second metal electrode 6, the center of the first metal electrode 5 has the first light hole 5-1, upper end welding the first contact conductor 7, the center of the second metal electrode 6 has the second light hole 6-1, upper end welding the second contact conductor 8, light beam can unobstructedly pass from the first light hole 5-1 and the second light hole 6-1, simultaneously, tested voltage is by the first contact conductor 7, the second contact conductor 8 and the first metal electrode 5, the second metal electrode 6 acts on the nesa coating of two logical light faces of BGO crystal 4, the BGO crystal 4 is in relatively equally distributed electric field, under the effect of electric field, BGO crystal 4 generation induced birefringence, its two induction main shafts are along the diagonal of crystal, simultaneously with parallel with the fast and slow axis direction of quarter-wave plate in wave plate polarizing prism 2.
Incident beam is directional light through the first optical fiber collimator 1 collimation, change circularly polarized light into by band wave plate polarizing prism 2, circularly polarized light passes the first light hole 5-1 incident BGO crystal 4, tested voltage acts on the nesa coating of two logical light faces of BGO crystal 4 by the first contact conductor 7, the second contact conductor 8 and the first metal electrode 5, the second metal electrode 6, the BGO crystal 4 has become biaxial crystal by the optical isotropy body under the effect of extra electric field, its two induction main shafts are along the diagonal of crystal.After circularly polarized light incides the BGO crystal 4, be decomposed into two bunch polarized lights, the polarization direction of this two bunch polarized light is parallel to respectively two induction main shafts of BGO crystal 4, and under the effect of electric field, two bunch polarized lights can produce a phase differential:
In formula, λ is incident light wave length, n
0Be the refractive index of BGO crystal 4, γ
41Be the linear electro-optic coefficient of BGO crystal 4, U is tested voltage.As seen, phase differential is directly proportional to the size of tested voltage, if detect the phase place extent, just can realize the purpose of measuring voltage.
In order to detect this phase differential, the method of employing polarization interference will change to the detection of phase place the detection to light intensity into, make and pass the second light hole 6-1 from the light beam of BGO crystal 4 outgoing and incide polarization splitting prism 3, it is guided to two bunch polarized lights on two orthogonal direction of vibration to produce and interferes and distinguish outgoing, during much smaller than the half-wave voltage of crystal, the light intensity of two bundle emergent lights are respectively when tested voltage:
I in formula
0Light intensity for the light source outgoing.This two bundles emergent light enters into respectively the second optical fiber collimator 9 and the 3rd optical fiber collimator 10 and coupled into optical fibres subsequently, deliver to photodetector through optical fiber transmission again and change electric signal into, and processed accordingly according to the double light path penalty method by circuit and computing machine, can obtain tested voltage.
embodiment two: illustrate present embodiment below in conjunction with Fig. 1, the difference of present embodiment and embodiment one is: it also comprises aluminum base 11, the first optical fiber collimator 1, the second optical fiber collimator 9, the 3rd optical fiber collimator 10, band wave plate polarizing prism 2 and polarization splitting prism 3 are fixed on aluminum base 11, aluminum base 11 is provided with gathering sill and locating slot, gathering sill is used for fixing the first optical fiber collimator 1, the second optical fiber collimator 9 and the 3rd optical fiber collimator 10, locating slot is used for fixed band wave plate polarizing prism 2 and polarization splitting prism 3, coaxial and the position relation of each optical element is satisfied in the design of gathering sill and locating slot.
Embodiment three: illustrate present embodiment below in conjunction with Fig. 1, the difference of present embodiment and embodiment two is: it also comprises base of ceramic 12, base of ceramic 12 is fixed on aluminum base 11, BGO crystal 4, the first metal electrode 5 and the second metal electrode 6 are fixed on base of ceramic 12
The stupalith that base of ceramic 12 uses has fabulous electrical insulation capability, can satisfy between the first metal electrode 5 and the second metal electrode 6, between the first metal electrode 5 and aluminum base 11 and the insulating requirements between the second metal electrode 6 and aluminum base 11, simultaneously, this stupalith has the thermal expansivity that is close with the BGO crystal 4, when variation of ambient temperature, can reduce to a great extent due to the caused stress birefrin effect of thermal expansion coefficient difference between different materials.
embodiment four: illustrate present embodiment below in conjunction with Fig. 1, the difference of present embodiment and embodiment two is: it also comprises polytetrafluoro upper cover 13, polytetrafluoro upper cover 13 is fixed by screws on aluminum base 11, the first optical fiber collimator 1, the second optical fiber collimator 9, the 3rd optical fiber collimator 10, band wave plate polarizing prism 2, polarization splitting prism 3, the BGO crystal 4, the first metal electrode 5, the second metal electrode 6, the first contact conductor 7 and the second contact conductor 8 are sealed in polytetrafluoro upper cover 13 and fasten in the cavity that forms with aluminum base 11, play the effect of protection optical component.
Claims (4)
1. the optical voltage sensor of longitudinal modulation, it is characterized in that: comprise the first optical fiber collimator (1), the second optical fiber collimator (9), the 3rd optical fiber collimator (10), band wave plate polarizing prism (2), polarization splitting prism (3), BGO crystal (4), the first metal electrode (5), the second metal electrode (6), the first contact conductor (7) and the second contact conductor (8)
the first optical fiber collimator (1) by the order that light passes through along the straight line coaxial arrangement, band wave plate polarizing prism (2), the first metal electrode (5), BGO crystal (4), the second metal electrode (6), polarization splitting prism (3) and the second optical fiber collimator (9), locate arranging the 3rd optical fiber collimator (10) at polarization splitting prism (3), described the 3rd optical fiber collimator (10) is vertical with above-mentioned straight line, described band wave plate polarizing prism (2) is formed by polarizing prism and quarter-wave plate gummed, wherein, the fast and slow axis of thoroughly shake direction and the quarter-wave plate of polarizing prism in angle of 45 degrees, the direction of thoroughly shaking of described polarization splitting prism (3) is parallel or vertical with the direction of thoroughly shaking of polarizing prism in band wave plate polarizing prism (2), described BGO crystal (4) is along (001), (100), (010) crystal face cutting, wherein two (001) faces are logical light face, be coated with nesa coating on it, nesa coating is further bonding by conducting resinl and the first metal electrode (5) and the second metal electrode (6), the center of the first metal electrode (5) has the first light hole (5-1), upper end welding the first contact conductor (7), the center of the second metal electrode (6) has the second light hole (6-1), upper end welding the second contact conductor (8), light beam can unobstructedly pass from the first light hole (5-1) and the second light hole (6-1), simultaneously, tested voltage is by the first contact conductor (7), the second contact conductor (8) and the first metal electrode (5), the second metal electrode (6) acts on the nesa coating of (4) two logical light faces of BGO crystal, BGO crystal (4) is in relatively equally distributed electric field, under the effect of electric field, induced birefringence occurs in BGO crystal (4), its two induction main shafts are along the diagonal of crystal, parallel with the fast and slow axis direction of quarter-wave plate in band wave plate polarizing prism (2) simultaneously.
2. the optical voltage sensor of longitudinal modulation according to claim 1, it is characterized in that: it also comprises aluminum base (11), the first optical fiber collimator (1), the second optical fiber collimator (9), the 3rd optical fiber collimator (10), band wave plate polarizing prism (2) and polarization splitting prism (3) are fixed on aluminum base (11), aluminum base (11) is provided with gathering sill and locating slot, gathering sill is used for fixing the first optical fiber collimator (1), the second optical fiber collimator (9) and the 3rd optical fiber collimator (10), locating slot is used for fixed band wave plate polarizing prism (2) and polarization splitting prism (3), coaxial and the position relation of each optical element is satisfied in the design of gathering sill and locating slot.
3. the optical voltage sensor of longitudinal modulation according to claim 2, it is characterized in that: it also comprises base of ceramic (12), base of ceramic (12) is fixed on aluminum base (11), and BGO crystal (4), the first metal electrode (5) and the second metal electrode (6) are fixed on base of ceramic (12).
4. the optical voltage sensor of longitudinal modulation according to claim 2, it is characterized in that: it also comprises polytetrafluoro upper cover (13), polytetrafluoro upper cover (13) is fixed by screws on aluminum base (11), the first optical fiber collimator (1), the second optical fiber collimator (9), the 3rd optical fiber collimator (10), band wave plate polarizing prism (2), polarization splitting prism (3), BGO crystal (4), the first metal electrode (5), the second metal electrode (6), the first contact conductor (7) and the second contact conductor (8) are sealed in polytetrafluoro upper cover (13) and fasten in the cavity that forms with aluminum base (11).
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| CN201110318747.8A CN102426281B (en) | 2011-10-19 | 2011-10-19 | Longitudinal modulation optical voltage sensor |
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| CN104685363B (en) * | 2012-08-21 | 2017-09-29 | Abb技术有限公司 | electro-optical voltage transducer signal processing system |
| CN103018520B (en) * | 2012-12-26 | 2016-02-17 | 武汉烽火富华电气有限责任公司 | A kind of voltage detecting optical sensing head and preparation method thereof |
| CN103777056A (en) * | 2013-12-13 | 2014-05-07 | 国家电网公司 | Vertical modulation reciprocity type optical voltage sensor |
| CN103954827A (en) * | 2014-04-03 | 2014-07-30 | 易能乾元（北京）电力科技有限公司 | Optical current sensor |
| CN109030962B (en) * | 2018-06-12 | 2024-04-09 | 浙江菲达环保科技股份有限公司 | Electric field performance measuring method and device based on electro-optic refraction and discrete micro-signals |
| CN109521247A (en) * | 2018-12-11 | 2019-03-26 | 龙岩学院 | The temperature self-compensation method of transverse modulation optical voltage transformer |
| CN112580207B (en) * | 2020-12-18 | 2022-10-14 | 福州大学 | Coaxial double-hemisphere voltage dividing device of optical voltage transformer and optimization method thereof |
| CN113238086A (en) * | 2021-05-11 | 2021-08-10 | 国网山东省电力公司泰安供电公司 | GIS transient shell voltage on-line monitoring system based on optical voltage sensor |
| CN113189386A (en) * | 2021-05-11 | 2021-07-30 | 国网山东省电力公司泰安供电公司 | GIS rapid transient overvoltage optical online monitoring system |
| CN114325136A (en) * | 2021-12-17 | 2022-04-12 | 国网冀北电力有限公司检修分公司 | Electric field measuring device based on electro-optic effect |
| CN114002289B (en) * | 2022-01-04 | 2022-03-22 | 苏州大学 | Transient photovoltage test sample assembly, transient photovoltage measurement device and method |
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| JPH10115644A (en) * | 1996-10-11 | 1998-05-06 | Toyota Central Res & Dev Lab Inc | Optical integrated voltage sensor |
| CN2541850Y (en) * | 2002-03-20 | 2003-03-26 | 华中科技大学 | Optical fiber electric field sensor |
| CN1419129A (en) * | 2002-12-12 | 2003-05-21 | 华中科技大学 | Optical fibre electric field sensor |
| CN101852824A (en) * | 2009-03-30 | 2010-10-06 | 徐启峰 | Digital photoelectric voltage sensor |
| DE102010006227B4 (en) * | 2010-01-11 | 2017-03-30 | Gesellschaft für Antriebs- und Energietechnik Regelungs- und Automatisierungssysteme mbH (AERAS-GmbH) | Current sensor unit and method for signal and / or data transmission |
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Effective date of registration: 20190530 Address after: 150001 No. 92 West straight street, Nangang District, Heilongjiang, Harbin Patentee after: HARBIN INSTITUTE OF TECHNOLOGY Address before: 150001 No. 92 West straight street, Nangang District, Heilongjiang, Harbin Co-patentee before: Beijing Xuji Power Optics Technology Co.,Ltd. Patentee before: Harbin Institute of Technology |
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