CN102424954A - Shutdown clean scheme for reducing particles of high density plasma chemical vapor deposition process - Google Patents
Shutdown clean scheme for reducing particles of high density plasma chemical vapor deposition process Download PDFInfo
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- CN102424954A CN102424954A CN2011102322735A CN201110232273A CN102424954A CN 102424954 A CN102424954 A CN 102424954A CN 2011102322735 A CN2011102322735 A CN 2011102322735A CN 201110232273 A CN201110232273 A CN 201110232273A CN 102424954 A CN102424954 A CN 102424954A
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Abstract
The present invention discloses a shutdown clean scheme for reducing particles of a high density plasma chemical vapor deposition process. According to the present invention, a process chamber of a chemical vapor deposition device is subjected to high fluidity shutdown clean, and then is subjected to bottom flowing clean; the process chamber is subjected to H2 passivation, and a pre-coating process is performed for the inner wall of the process chamber, wherein a O2 passivation process is performed between the H2 passivation process and the pre-coating process. According to the shutdown clean scheme for reducing the particles of the high density plasma chemical vapor deposition process, the O2 passivation process is added between the H2 passivation process and the pre-coating process, such that the effects of passivation protection and restoration are provided for the inner wall of the process chamber so as to effectively solve the problem of the particles in the HDP process.
Description
Technical field
The present invention relates to a kind of semiconductor technology, relate in particular to a kind of particulate cleaning program that reduces the meteorological depositing technics of high-density plasma chemical.
Background technology
To the SPEEDTM HDP equipment of Nuo Fa semiconductor company, propose a kind of new technology and cleaned (ShutDown Clean) method, can effectively reduce particle (particle) problem of meteorological deposit (HDP) technology of high-density plasma chemical.So-called clean (ShutDown Clean); Be to have accumulated deposit behind the certain thickness film when processing chamber (chamber); Need utilize the F ion remaval to be deposited on the RM on the chamber wall, thereby reduce the particle issues in the technological process, processing condition sustainably are provided simultaneously.HDP technology is because himself process characteristic: through the deposit of SIH4+O2, and the sputter opening effect of Ar, He or H2 simultaneously, thus reach the function of gapfill.Particle is the greatest problem of HDP technology always, and HDP is applied to critical process step such as STI, PMD, ILD again.So the particle level of HDP directly influences the yield height of device.
Summary of the invention
The invention discloses a kind of particulate cleaning program that reduces the meteorological depositing technics of high-density plasma chemical, thereby in order to prevent that dropping on silicon chip under the flake-off at reactant under the environment of chemical reaction from the process cavity locular wall causes particle to influence the problem of good productive rate.
Above-mentioned purpose of the present invention realizes through following technical scheme:
A kind of particulate cleaning program that reduces the meteorological depositing technics of high-density plasma chemical carries out high workability to the processing chamber of a chemical meteorological deposition apparatus and cleans, and carries out then that underflow is moving to be cleaned; Processing chamber is carried out the H2 passivation; At the processing chamber inwall layer process of precoating, wherein, at the H2 passivation technology and precoat and also comprise between the layer process: processing chamber is carried out the O2 passivation technology.
The particulate cleaning program of the meteorological depositing technics of aforesaid reduction high-density plasma chemical; Wherein, behind the H2 passivation technology, be filled with Al2O2 (OH) in the processing chamber, the O2 passivation technology is specially: in processing chamber, feed O2; The O that activates among the Al2O2 (OH) replaces H; Thereby eliminate the Al-OH dangling bonds, while reacting recovery Al2O3 is with the damage of technology before repairing to dome.
The particulate cleaning program of the meteorological depositing technics of aforesaid reduction high-density plasma chemical, wherein, the O2 passivation technology also comprises: in processing chamber, feed carrier gas, to play the effect of catalytic gas ionization.
The particulate cleaning program of the meteorological depositing technics of aforesaid reduction high-density plasma chemical, wherein, the carrier gas that feeds in the O2 passivation technology is an Ar gas.
The particulate cleaning program of the meteorological depositing technics of aforesaid reduction high-density plasma chemical, wherein, the carrier gas that feeds in the O2 passivation technology is He or H2.
The particulate cleaning program of the meteorological depositing technics of aforesaid reduction high-density plasma chemical, wherein, in the O2 passivation technology with the ratio control of O2 gas and Ar gas at O2:Ar=1:3.7.
The particulate cleaning program of the meteorological depositing technics of aforesaid reduction high-density plasma chemical, wherein, the total flux with O2 gas and Ar gas in the O2 passivation technology is controlled at 155sccm, and wherein, the O2 flow is 33sccm, and the Ar gas flow is 122sccm.
The particulate cleaning program of the meteorological depositing technics of aforesaid reduction high-density plasma chemical, wherein, the time of O2 passivation technology is controlled at 60S.
In sum; The particulate cleaning program that the present invention reduces the meteorological depositing technics of high-density plasma chemical is through at the H2 passivation technology and the adding O2 passivation technology between the layer process of precoating; Play the effect of passivation protection and reparation with inwall, thereby effectively solve the particle issues in the HDP technology processing chamber.
Description of drawings
Through reading the detailed description of non-limiting example being done with reference to following accompanying drawing, it is more obvious that the present invention and characteristic thereof, profile and advantage will become.
Fig. 1 is the process flow sheet that the present invention reduces the particulate cleaning program of the meteorological depositing technics of high-density plasma chemical;
Fig. 2 is the synoptic diagram of the independent feeding O2 of the present invention's particulate cleaning program of reducing the meteorological depositing technics of high-density plasma chemical;
Fig. 3 is the synoptic diagram behind the increase Ar gas flow of the present invention's particulate cleaning program of reducing the meteorological depositing technics of high-density plasma chemical;
Fig. 4 be the present invention's particulate cleaning program of reducing the meteorological depositing technics of high-density plasma chemical be that the flow of 122sccm, O2 is the synoptic diagram behind the 99sccm with the Ar flow set;
Fig. 5 is that Ar and the O2 total flux of the present invention's particulate cleaning program of reducing the meteorological depositing technics of high-density plasma chemical is the synoptic diagram of the throughput ratio of change Ar and O2 under the 155sccm condition;
Fig. 6 is the synoptic diagram of the optimal conditions of the present invention's particulate cleaning program of reducing the meteorological depositing technics of high-density plasma chemical.
Embodiment
Be further described below in conjunction with the accompanying drawing specific embodiments of the invention:
Fig. 1 is the process flow sheet that the present invention reduces the particulate cleaning program of the meteorological depositing technics of high-density plasma chemical; See also Fig. 1; A kind of particulate cleaning program that reduces the meteorological depositing technics of high-density plasma chemical; Processing chamber to a chemical meteorological deposition apparatus carries out the high workability cleaning, carries out the moving cleaning of underflow then; Processing chamber is carried out the H2 passivation; At the processing chamber inwall layer process of precoating, wherein, at the H2 passivation technology and precoat and also comprise between the layer process: processing chamber is carried out the O2 passivation technology.
Further, behind the H2 passivation technology, be filled with Al2O2 (OH) in the processing chamber, the O2 passivation technology is specially: in processing chamber, feed O2; The O that activates among the Al2O2 (OH) replaces H; Thereby eliminate the Al-OH dangling bonds, while reacting recovery Al2O3 is with the damage of technology before repairing to dome.
Fig. 2 is the synoptic diagram of the independent feeding O2 of the present invention's particulate cleaning program of reducing the meteorological depositing technics of high-density plasma chemical; See also Fig. 2, do not having to feed O2 separately under the environment of carrier gas; Actual particle maintains higher level, increases the O2 flow and can reduce particle.
Fig. 3 is the synoptic diagram behind the increase Ar gas flow of the present invention's particulate cleaning program of reducing the meteorological depositing technics of high-density plasma chemical; See also Fig. 3, among the present invention, the O2 passivation technology also comprises: in processing chamber, feed carrier gas; To play the effect of catalytic gas ionization; The carrier gas that feeds in the O2 passivation technology among the present invention can be Ar gas, and the O2 gas flow is fixed as 33sccm, increases the Ar gas flow; Particle presents remarkable decline, that is to say that Ar is to playing katalysis in the reaction of O and H in plasma environment.Ar can help O2 to be decomposed into ionic condition, thus the reaction of acceleration and H.
Further, the carrier gas that feeds in the O2 passivation technology among the present invention can be He or H2, can play catalytic effect equally.
Fig. 4 be the present invention's particulate cleaning program of reducing the meteorological depositing technics of high-density plasma chemical be that the flow of 122sccm, O2 is the synoptic diagram behind the 99sccm with the Ar flow set; See also Fig. 4; Fixedly the Ar flow is that 122sccm, O2 flow are the condition elder generation of 99sccm, increases the time of passivation, and particle presents downtrending; It is of a specified duration more that this can be interpreted as the time; The reaction of O2 and H is abundant more, but the time is uneconomical to equipment capacity too for a long time, so the time of the O2 passivation technology among the present invention is controlled at 60S.
Fig. 5 is that Ar and the O2 total flux of the present invention's particulate cleaning program of reducing the meteorological depositing technics of high-density plasma chemical is the synoptic diagram of the throughput ratio of change Ar and O2 under the 155sccm condition; See also Fig. 5; Fixedly Ar and O2 total flux are under the condition of 155sccm; Change the throughput ratio of O2:Ar, find to be under the condition of 1:3.7 only, the minimum number of particle in the O2:Ar throughput ratio.So O2:Ar=1:3.7 is an optimal conditions.This can be interpreted as: increases Ar and can help O2 to be decomposed into ionic condition, thus the reaction of acceleration and H; But when the Ar flow is too much, has diluted the O ion on the contrary reaction efficiency is reduced, so can the throughput ratio of gas be made as O2:Ar=1:3.7 optimum.
Fig. 6 is the synoptic diagram of the optimal conditions of the present invention's particulate cleaning program of reducing the meteorological depositing technics of high-density plasma chemical; See also Fig. 6, further, the total flux with O2 gas and Ar gas in the O2 passivation technology is controlled at 155sccm; The O2 flow is 33sccm; The Ar gas flow is 122sccm, is under the condition of 1:3.7 in fixing O2:Ar throughput ratio, changes the total gas couette (such atmospheric pressure value that also can influence chamber) of O2 and Ar; Find total gas couette low more (chamber air pressure is also low more simultaneously), particle quantity is few more.But total gas couette very little, is not enough to light plasma body (plasma).So according to the existing processes condition, optimized conditional is that the total gas couette of O2 and Ar is 155sccm, wherein the O2 flow is 33sccm, and the Ar flow is 122sccm, and the O2:Ar throughput ratio keeps 1:3.7 constant.
In sum; Owing to adopted technique scheme; The particulate cleaning program that the present invention reduces the meteorological depositing technics of high-density plasma chemical is through at the H2 passivation technology and the adding O2 passivation technology between the layer process of precoating; Play the effect of passivation protection and reparation with inwall, thereby effectively solve the particle issues in the HDP technology processing chamber.
It should be appreciated by those skilled in the art that those skilled in the art combine prior art and the foregoing description can realize said variant, do not repeat them here.Such variant does not influence flesh and blood of the present invention, does not repeat them here.
More than preferred embodiment of the present invention is described.It will be appreciated that the present invention is not limited to above-mentioned specific implementations, equipment of wherein not describing in detail to the greatest extent and structure are construed as with the usual manner in this area to be implemented; Any those of ordinary skill in the art; Do not breaking away under the technical scheme scope situation of the present invention; All the method for above-mentioned announcement capable of using and technology contents are made many possible changes and modification to technical scheme of the present invention; Or being revised as the equivalent embodiment of equivalent variations, this does not influence flesh and blood of the present invention.Therefore, every content that does not break away from technical scheme of the present invention, all still belongs in the scope of technical scheme protection of the present invention any simple modification, equivalent variations and modification that above embodiment did according to technical spirit of the present invention.
Claims (8)
1. particulate cleaning program that reduces the meteorological depositing technics of high-density plasma chemical carries out high workability to the processing chamber of a chemical meteorological deposition apparatus and cleans, and carries out then that underflow is moving to be cleaned; Processing chamber is carried out the H2 passivation; At the processing chamber inwall layer process of precoating, it is characterized in that, at the H2 passivation technology and precoat and also comprise between the layer process: processing chamber is carried out the O2 passivation technology.
2. the particulate cleaning program of the meteorological depositing technics of reduction high-density plasma chemical according to claim 1; It is characterized in that behind the H2 passivation technology, be filled with Al2O2 (OH) in the processing chamber, the O2 passivation technology is specially: in processing chamber, feed O2; The O that activates among the Al2O2 (OH) replaces H; Thereby eliminate the Al-OH dangling bonds, while reacting recovery Al2O3 is with the damage of technology before repairing to dome.
3. the particulate cleaning program of the meteorological depositing technics of reduction high-density plasma chemical according to claim 2 is characterized in that the O2 passivation technology also comprises: in processing chamber, feed carrier gas, to play the effect of catalytic gas ionization.
4. the particulate cleaning program of the meteorological depositing technics of reduction high-density plasma chemical according to claim 3 is characterized in that the carrier gas that feeds in the O2 passivation technology is an Ar gas.
5. the particulate cleaning program of the meteorological depositing technics of reduction high-density plasma chemical according to claim 3 is characterized in that the carrier gas that feeds in the O2 passivation technology is He or H2.
6. the particulate cleaning program of the meteorological depositing technics of reduction high-density plasma chemical according to claim 4 is characterized in that, in the O2 passivation technology with the ratio control of O2 gas and Ar gas at O2:Ar=1:3.7.
7. the particulate cleaning program of the meteorological depositing technics of reduction high-density plasma chemical according to claim 4; It is characterized in that; Total flux with O2 gas and Ar gas in the O2 passivation technology is controlled at 155sccm, and the O2 flow is 33sccm, and the Ar gas flow is 122sccm.
8. according to the particulate cleaning program of the meteorological depositing technics of the arbitrary described reduction high-density plasma chemical of claim 1 ~ 7, it is characterized in that the time of O2 passivation technology is controlled at 60S.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103484933A (en) * | 2013-10-22 | 2014-01-01 | 西安电子科技大学 | Cleaning method for epitaxial chemical vapor deposition (CVD) device |
| CN103646916A (en) * | 2013-11-28 | 2014-03-19 | 上海华力微电子有限公司 | A method for improving HSP PSG technology and a method for producing a pre-metal dielectric layer |
| CN104867815A (en) * | 2015-04-29 | 2015-08-26 | 上海华力微电子有限公司 | Cleaning method of etching reaction chamber |
| CN110931601A (en) * | 2019-11-27 | 2020-03-27 | 通威太阳能（安徽）有限公司 | Method for improving PID (proportion integration differentiation) resistance of crystalline silicon solar cell |
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| US20040245091A1 (en) * | 2003-06-04 | 2004-12-09 | Applied Materials, Inc. | Hdp-cvd multistep gapfill process |
| CN1861838A (en) * | 2005-05-09 | 2006-11-15 | 联华电子股份有限公司 | Chemical gaseous phase depositing process of avoiding reacting room particle pollution |
| US20060254614A1 (en) * | 2003-09-02 | 2006-11-16 | Texas Instruments Incorporated | Deposition tool cleaning process having a moving plasma zone |
| CN101673660A (en) * | 2008-09-09 | 2010-03-17 | 中芯国际集成电路制造(北京)有限公司 | Processing method of gap filling and manufacturing method of shallow trench isolation groove |
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2011
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Patent Citations (4)
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| US20040245091A1 (en) * | 2003-06-04 | 2004-12-09 | Applied Materials, Inc. | Hdp-cvd multistep gapfill process |
| US20060254614A1 (en) * | 2003-09-02 | 2006-11-16 | Texas Instruments Incorporated | Deposition tool cleaning process having a moving plasma zone |
| CN1861838A (en) * | 2005-05-09 | 2006-11-15 | 联华电子股份有限公司 | Chemical gaseous phase depositing process of avoiding reacting room particle pollution |
| CN101673660A (en) * | 2008-09-09 | 2010-03-17 | 中芯国际集成电路制造(北京)有限公司 | Processing method of gap filling and manufacturing method of shallow trench isolation groove |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103484933A (en) * | 2013-10-22 | 2014-01-01 | 西安电子科技大学 | Cleaning method for epitaxial chemical vapor deposition (CVD) device |
| CN103646916A (en) * | 2013-11-28 | 2014-03-19 | 上海华力微电子有限公司 | A method for improving HSP PSG technology and a method for producing a pre-metal dielectric layer |
| CN103646916B (en) * | 2013-11-28 | 2016-03-23 | 上海华力微电子有限公司 | Improve method and the presedimentary dielectric substance layer manufacture method of metal of HDP PSG technology |
| CN104867815A (en) * | 2015-04-29 | 2015-08-26 | 上海华力微电子有限公司 | Cleaning method of etching reaction chamber |
| CN104867815B (en) * | 2015-04-29 | 2018-01-26 | 上海华力微电子有限公司 | A kind of clean method of etching reaction cavity |
| CN110931601A (en) * | 2019-11-27 | 2020-03-27 | 通威太阳能（安徽）有限公司 | Method for improving PID (proportion integration differentiation) resistance of crystalline silicon solar cell |
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| CN102424954B (en) | 2013-10-02 |
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