CN102419609A - Reference voltage and reference current generating circuit and method - Google Patents
Reference voltage and reference current generating circuit and method Download PDFInfo
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- CN102419609A CN102419609A CN2010105080165A CN201010508016A CN102419609A CN 102419609 A CN102419609 A CN 102419609A CN 2010105080165 A CN2010105080165 A CN 2010105080165A CN 201010508016 A CN201010508016 A CN 201010508016A CN 102419609 A CN102419609 A CN 102419609A
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Abstract
The invention relates to a reference voltage and reference current generating circuit and method. The reference voltage and reference current generating circuit comprises a bandgap reference circuit and a voltage-to-current conversion circuit. Through configuration, the bandgap reference circuit is used for generating the reference voltage with the zero temperature coefficient through generating first current with the positive temperature coefficient. The voltage-to-current conversion circuit is coupled to a node of the bandgap reference circuit, and the voltage of the node with the negative temperature coefficient is converted into second current with the negative temperature coefficient through configuration. The bandgap reference circuit and the voltage-to-current conversion circuit comprise a shared current source which is provided with a feedback transistor and circulates reference current. The reference current is divided into the first current in the bandgap reference circuit and the second current in the voltage-to-current conversion circuit, so the temperature coefficient substantially equal to zero is realized through converging the first current with the second current.
Description
Technical field
The present invention is about a kind of reference voltage and reference current generating circuit and method, and particularly about reference voltage and the reference current generating circuit and the method for a kind of temperature independent (temperature-independent).
Background technology
In IC design, often need to use temperature independent reference voltage and/or temperature independent reference current, these reference voltages and reference current generally are to use bandgap reference (band-gap reference) circuit to produce.
For example; In order to produce the reference voltage of temperature independent (being zero-temperature coefficient); Utilize the transistorized negative temperature coefficient feature of two-carrier to produce a negative temperature coefficient voltage often; And the conversion characteristic of utilizing resistance is a positive temperature coefficient (PTC) voltage with the current conversion of a positive temperature coefficient (PTC), then with the positive temperature coefficient (PTC) voltage weighting and obtain the reference voltage of zero-temperature coefficient therewith of this negative temperature coefficient voltage.Or in order to produce a temperature independent reference current; At first utilize the conversion characteristic of transistorized negative temperature coefficient feature of two-carrier and resistance to produce a negative temperature parameter current, again with this negative temperature parameter current and a positive temperature coefficient (PTC) electric current weighting and obtain the electric current of zero-temperature coefficient.
In practical application, the situation that need use temperature independent reference voltage and temperature independent reference current simultaneously is also for common.In this case, for example, can design respectively that a bandgap reference circuit produces temperature independent reference voltage and another bandgap reference circuit produces temperature independent reference current.Or can utilize a bandgap reference circuit to produce the reference current (or reference voltage) of zero-temperature coefficient earlier, set up reference current (or reference voltage) that extra circuit is used for duplicating (mirror) this zero-temperature coefficient and the reference voltage (or reference current) that is converted into zero-temperature coefficient again.This additional circuit has a bias current source that is used for replica current (or duplicating voltage) usually and at least one is used for the resistance that switching current is voltage (or changing voltage is an electric current).
Yet traditional circuit often all consumes many component numbers, takies huge chip area, and causes a large amount of power consumptions and manufacturing cost.One of reason is, reference voltage and reference current result from that circuit design is conceptive to be integrated.Therefore, design voltage and the electric current of a kind of circuit of simplifying, become one of R&D direction that industry endeavours to produce zero-temperature coefficient simultaneously.
Summary of the invention
The purpose of this invention is to provide a kind of reference voltage and reference current generating circuit and method, have voltage and the electric current of circuit to produce zero-temperature coefficient simultaneously of simplifying.
According to an aspect of the present invention, propose a kind of reference voltage and reference current generating circuit, comprise bandgap reference circuit and voltage-to-current conversion circuit.Bandgap reference circuit produces the reference voltage with zero-temperature coefficient through first electric current that is configured to have through generation positive temperature coefficient (PTC).Voltage-to-current conversion circuit is coupled to a node of bandgap reference circuit; And be second electric current with negative temperature coefficient through the voltage transitions that is configured to the negative temperature coefficient of node; Wherein bandgap reference circuit and voltage-to-current conversion circuit comprise that one shares current source; It has the feedback transistor reference current that circulates; And reference current splits into first electric current in the bandgap reference circuit and splits into second electric current in the voltage-to-current conversion circuit, thereby has a null in fact temperature coefficient through first and second electric current that confluxes.
According to a second aspect of the invention, propose a kind of reference voltage and reference current generating circuit, comprise bandgap reference circuit and voltage-to-current conversion circuit.Bandgap reference circuit system produces the reference voltage with a zero-temperature coefficient and exports in first node through a flow through first node of bandgap reference circuit of one first electric current that generation has a positive temperature coefficient (PTC) through being configured to.Voltage-to-current conversion circuit, the Section Point that it is coupled to bandgap reference circuit is to be one second electric current with the negative temperature coefficient first node of flowing through through being configured to voltage transitions with a negative temperature coefficient of Section Point.Bandgap reference circuit and voltage-to-current conversion circuit comprise that one shares current source, and it is coupled to first node, in order to export a reference current.Reference current splits into first electric current in the bandgap reference circuit and splits into second electric current in the voltage-to-current conversion circuit in first node, thereby has a null in fact temperature coefficient through first and second electric current that confluxes.
According to a third aspect of the invention we, propose a kind of reference voltage and reference current generating circuit, comprise bandgap reference circuit and voltage-to-current conversion circuit.Bandgap reference circuit is in order to exporting a temperature independent reference voltage, and comprises that one is proportional to absolute temperature (Proportional to absolute temperature, PTAT) current generation section branch is with first operational amplifier.PTAT current generation section branch comprises that first and second junction transistor couples each other; And first to the 3rd resistive element; Be respectively coupled between second junction transistor and second resistive element, between first resistive element and the first node, and between first junction transistor and the first node.First operational amplifier has first input end and is coupled between first resistive element and second resistive element, and second input end is coupled between the 3rd resistive element and first junction transistor, and has an output terminal.Voltage-to-current conversion circuit comprises second operational amplifier and a bias current source.The second operational amplifier cording has first input end to be coupled between first junction transistor and the 3rd resistive element, and has second input end and an output terminal.Bias current source cording has a bias transistor; It has the output terminal that first end is coupled to second operational amplifier; Second end is coupled to first node; And have one the 3rd end, and one the 4th resistive element, the one of which end is coupled to the 3rd end of bias transistor and second input end of second operational amplifier.Bandgap reference circuit and voltage-to-current conversion circuit comprise that also one shares current source, and it comprises a feedback transistor, and it is coupled to a voltage source, first node, and the output terminal of first operational amplifier, in order to export a temperature independent reference current.
According to a forth aspect of the invention; A kind of reference voltage and reference current production method are proposed; Comprise that first electric current that has a positive temperature coefficient (PTC) through generation has the reference voltage of zero-temperature coefficient with generation, also produces a back bias and a negative temperature coefficient voltage simultaneously; With the negative temperature coefficient voltage transitions is second electric current with negative temperature coefficient; And produce a reference current according to back bias, wherein reference current system has a null in fact temperature coefficient through conflux this first electric current and this second electric current.
Useful technique effect of the present invention is: the present invention includes a bandgap reference circuit temperature independent reference voltage is provided; And comprise that a voltage-to-current conversion circuit shares a current source of bandgap reference circuit, therefore can on this current source, produce temperature independent reference current.Compare conventional art, this reference voltage and reference current generating circuit can effectively be simplified circuit structure, reduce circuit area and power consumption, and reduce the circuit manufacturing cost.
Description of drawings
For there is better understanding above-mentioned and other aspect of the present invention, hereinafter is special lifts preferred embodiment, and conjunction with figs., elaborate, wherein:
Fig. 1 illustrates according to the reference voltage of preferred embodiment of the present invention and the circuit structure diagram of reference current generating circuit.
Fig. 2 illustrates the process flow diagram according to the reference voltage of preferred embodiment of the present invention and reference current production method.
Embodiment
Following embodiment is about a kind of reference voltage and reference current generating circuit; It mainly comprises a bandgap reference circuit; In order to through produce one have positive temperature coefficient (PTC) electric current produce a temperature independent reference voltage; And a voltage-to-current conversion circuit is coupled to bandgap reference circuit, in order to the voltage of changing a negative temperature coefficient become one have a negative temperature coefficient electric current.In addition; This bandgap reference circuit and voltage-to-current conversion circuit have one and share current source; The positive temperature coefficient (PTC) electric current of bandgap reference circuit and the negative temperature parameter current of voltage-to-current conversion circuit are confluxed on it, in order to produce temperature independent reference current.
The common point of traditional circuit, be since reference voltage and reference current result from that circuit design is conceptive to be integrated, so must use a plurality of bias currents source, temperature independent reference voltage and temperature independent reference current could be provided simultaneously.Yet this reference voltage and reference current generating circuit are that the mode through sharing current source is integrated into the bandgap reference circuit that originally only is used for producing reference voltage with the generation function of reference current.Therefore, compare conventional art, this reference voltage and reference current generating circuit can significantly reduce circuit complexity, area occupied and power consumption, and then reduce the manufacturing cost of integrated circuit.
Please with reference to Fig. 1, it illustrates according to the reference voltage of a preferred embodiment and the circuit structure diagram of reference current generating circuit.As shown in Figure 1, reference voltage and reference current generating circuit 100 can comprise bandgap reference circuit 110 and voltage-to-current conversion circuit 120, wherein bandgap reference circuit 110 and voltage-to-current conversion circuit 120 both comprise that one shares current source 116.
Bandgap reference circuit 110 produces first electric current I with a positive temperature coefficient (PTC) through configuration
1First node X flows through.Through producing this first electric current I
1, bandgap reference circuit 110 can produce the have zero-temperature coefficient reference voltage Vref of (promptly temperature independent), and it can be exported in first node X equally.
On the other hand, voltage-to-current conversion circuit 120 is coupled to the Section Point A of bandgap reference circuit 110, and through being configured to convert the voltage Va with negative temperature coefficient of Section Point A into negative temperature coefficient second electric current I
2With first electric current I
1Similar, this second electric current I
2First node X equally flows through.Through suitable circuit design, can make second electric current I
2The size of negative temperature coefficient equal first electric current I
1The size of positive temperature coefficient (PTC).
The shared current source 116 that both are enjoyed jointly as for bandgap reference circuit 110 and voltage-to-current conversion circuit 120, it is coupled to first node X, in order to circulation and export reference current Iref.As shown in Figure 1, in first node X place, reference current Iref splits into first electric current I in the bandgap reference circuit 110
1, and split into second electric current I in the voltage-to-current conversion circuit 120
2
Because reference current Iref is by first electric current I
1And second electric current I
2Conflux and form (that is Iref=I
1+ I
2), and first electric current I
1The positive temperature coefficient (PTC) and second electric current I
2Negative temperature coefficient be to be designed to equal and opposite in direction, so reference current Iref has null in fact temperature coefficient.
According to above-mentioned; Reference voltage and reference current generating circuit 100 are under the easy structure with single shared current source 116; The circuit component that duplicates and change usefulness need not be extraly set up, the reference voltage Vref of zero-temperature coefficient and the reference current Iref of zero-temperature coefficient can be produced simultaneously.Below will further utilize an embodiment to specify the thin portion structure and the principle of operation of bandgap reference circuit 110 and voltage-to-current conversion circuit 120.
Fig. 1 also illustrates the thin portion circuit structure diagram according to the bandgap reference circuit 110 of one embodiment of the invention.As shown in Figure 1; Bandgap reference circuit 110 is shared the current source 116 except comprising; Also comprise be proportional to absolute temperature (Proportional to absolute temperature, PTAT) current generation section divides 112, it is coupled in first node X place shares current source 116; And comprise an operational amplifier 114, its be coupled in the PTAT current generation section divide 112 and shared current source 116 between.
In a specific embodiment (as shown in Figure 1), be proportional to the absolute temperature current generation section and divide 112 can comprise first and second junction transistor Q1 and Q2 and first to the 3rd resistive element R1～R3.Junction transistor Q1 and Q2, both are PNP two-carrier transistors for example respectively, and both collection utmost points and base stage all are coupled to ground voltage GND.Both have different electric current area densities junction transistor Q1 and Q2, for example are the areas (such as A) of junction transistor Q1 less than the area of junction transistor Q2 (such as nA, wherein n is the positive integer greater than 1).On the other hand, the first resistive element R1 is coupled between the emitter-base bandgap grading and the second resistive element R2 of junction transistor Q2.The second resistive element R2 is coupled to through first node X and shares current source 116 and be coupled to the first resistive element R1 through Node B, and the 3rd resistive element R3 is coupled to the emitter-base bandgap grading of sharing current source 116 and being coupled to junction transistor Q1 through Section Point A through nodes X.
On the other hand, operational amplifier 114 has two input end In1 (for example be positive input terminal+) and In2 (for example be negative input end-), and it can be coupled to respectively and be proportional to the absolute temperature current generation section and divide 112 two Node B and A.In addition, operational amplifier 114 also has an output terminal O1, and it is in order to produce a back bias Vf to sharing current source 116.Through the retroactive effect of operational amplifier 114, may command is shared suitably bias voltage and export reference current Iref of current source 116.
As for shared current source 116; It for example can comprise a feedback transistor M1; For example be that (its drain electrode is coupled to first node X to P-type mos for p-type metal oxide semiconductor, PMOS) transistor; Its grid is coupled to the output terminal O1 of operational amplifier 114, and its source electrode is coupled to voltage source V DD.
Under above-mentioned circuit arrangement, PTAT produces part 112 can and share current source 116 collocation runnings with operational amplifier 114, and produces the branch current I of two positive temperature coefficient (PTC)s
11And I
12The first node X that flows through forms first electric current I
1, and also with branch current I
11And I
12At least one of them converts reference voltage Vref into and exports in first node X.Below continue to be specified in the operation principles of bandgap reference circuit 110.
Continuation is with reference to figure 1, because the collection utmost point and the base stage of junction transistor Q1 and Q2 all are coupled to ground voltage GND, so the voltage Vb=V1+V of Node B
BE2, the voltage Va=V of node A
BE1In addition, through the imaginary short effect of operational amplifier 114, the voltage of first input end In1 equates that with the voltage of the second input end In2 in other words, the voltage Vb of Node B can equal the voltage Va of node A that is Va=Vb.
According to above-mentioned, the cross-pressure V1=V that can derive first resistance R 1
BE1-V
BE2=KTln (n), and flow through the electric current I of the first resistive element R1
11=KTln (n)/R1, wherein K is a constant, and T is an absolute temperature, and n is the area ratio of junction transistor Q2 and Q1, and R1 is the resistance value of the first resistive element R1.In other words, electric current I
11Be one to be proportional to the absolute temperature electric current, promptly its temperature coefficient be on the occasion of.
Next, can further derive reference voltage Vref, it equals base stage-emitter-base bandgap grading cross-pressure V of junction transistor Q2
BE2With the summation of the cross-pressure (V1+V2) of resistive element R1, R2, that is Vref=V1+V2+V
BE2=I
11(R1+R2)+V
BE2=KTln (n) (R1+R2)/R1+V
BE2Through suitably choosing the resistance value of the first resistive element R1 and the second resistive element R2, the cross-pressure KTln (n) that can make resistive element R1, R2 (R1+R2)/positive temperature coefficient (PTC) of R1 and the base stage of junction transistor Q2-emitter-base bandgap grading cross-pressure V
BE2Negative temperature coefficient repeal by implication, thereby obtain a reference voltage Vref with zero-temperature coefficient (temperature independent).Similarly, also can be with the cross-pressure V of junction transistor Q1
BE1Obtain reference voltage Vref mutually with the cross-pressure V3 of resistive element R3.
On the other hand, also can derive first electric current I
1Value.First electric current I
1Tell the electric current I that flows through the first resistive element R1 and the second resistive element R2 through first node X
11And the electric current I that flows through the 3rd resistive element R3
12, that is I
1=I
11+ I
12Under the imaginary short effect of operational amplifier 114 lets Va=Vb, can draw I
1=I
11+ I
12=KT*ln (n) * (1+R2/R3)/R1, wherein R2 and R3 are respectively the resistance value of the second resistive element R2 and the 3rd resistive element R3.In other words, first electric current I
1Also has positive temperature coefficient (PTC).
Comprehensively above-mentioned, bandgap reference circuit 110 can produce first electric current I with a positive temperature coefficient (PTC)
1The first node X that flows through, and produce the reference voltage Vref with zero-temperature coefficient and export by first node X.
Next, the thin portion structure and the principle of operation that transfer account for voltage to current converter circuit 120 to.Fig. 1 also illustrates the thin portion circuit structure diagram according to the voltage-to-current conversion circuit 120 of preferred embodiment of the present invention.As shown in Figure 1, voltage-to-current conversion circuit 120 is shared the current source 116 except comprising, also comprises bias current source 122 and operational amplifier 124.
Bias current source 122 is coupled in first node X place shares current source 116, and is coupled to the second input end In2 and the output terminal O2 of operational amplifier 124, in order to second electric current I that circulates according to the negative temperature coefficient voltage Va at Section Point A place
2
In a specific embodiment (as shown in Figure 1), bias current source 122 for example comprises bias transistor M2 and the 4th resistive element R4.Bias transistor M2; It for example is N type metal oxide semiconductor (n-type metaloxide semiconductor; NMOS) transistor; Have first end (being grid) and be coupled to the output terminal O2 of operational amplifier 124, have second end (i.e. drain electrode) and be coupled to first node X, and have the 3rd end (being source electrode).Resistive element R4 then has an end and is coupled to the 3rd end of bias transistor M2 and the second input end In2 of operational amplifier 124, and has other end ground connection.
Under above-mentioned circuit arrangement, current source 116 collocation runnings can and be shared with operational amplifier 124 in bias current source 122, with second electric current I that circulates according to the negative temperature coefficient voltage Va at Section Point A place
2Below continue to detail the operation principles of voltage-to-current conversion circuit 120.
Continuation is with reference to figure 1.The output terminal O2 of operational amplifier 124 can feed back to the grid of bias transistor M2, and M2 exports second electric current I in order to the control bias transistor
2When second electric current I
2When flowing through bias transistor M2 and the 4th resistive element R4, can on the 4th resistive element R4, produce a cross-pressure Vc=I
2* R4, wherein R4 is the resistance value of the 4th resistive element R4.Simultaneously, through the imaginary short effect of operational amplifier 124, the voltage of first input end In1 equals the voltage of the second input end In2, so the voltage Vc of node C equals the voltage Va of node A, that is Vc=Va=V
BE1
According to above-mentioned, can derive and learn second electric current I
2=V
BE1/ R4.Because base stage-emitter-base bandgap grading cross-pressure V of junction transistor Q1
BE1Has negative temperature coefficient, therefore second electric current I
2(=V
BE1/ R4) also have a negative temperature coefficient.As a result, voltage-to-current conversion circuit 120 can be second electric current I with negative temperature coefficient with the voltage transitions of the negative temperature coefficient of node A
2
Conclude above-mentioned operation; Reference voltage and reference current generating circuit 100 utilize bandgap reference circuit 110 to produce a temperature independent reference voltage Vref; And utilize voltage-to-current conversion circuit 120 and bandgap reference circuit 110 to share current source 116, make to share in the current source 116 to be proportional to the absolute temperature electric current I except generation
1Outward, also extra generation one is inversely proportional to the absolute temperature electric current I
2Through suitable design, can make first electric current I
1The size of positive temperature coefficient (PTC) equal the size of the negative temperature coefficient of second electric current, form temperature independent reference current Iref (=I thereby can let first electric current and second electric current conflux
1+ I
2).
For example, in the embodiment in figure 1, reference current Iref=I
1+ I
2=KT*ln (n) * (1+R2/R3)/R1+V
BE1/ R4.Therefore can make the electric current I of winning through suitably selecting the resistance value of first to fourth resistive element R1 to R4
1Size with the temperature positive dirction changes just can be offset second electric current I
2The size that changes with the temperature negative direction, thus the reference current Iref of zero-temperature coefficient (temperature independent) obtained.
It should be noted that; Though above-mentioned embodiment shown in Figure 1 is that metal-oxide semiconductor (MOS) (MOS) transistor is that example is explained with feedback transistor M1 and bias transistor M2; So in other embodiment, feedback transistor M1 and bias transistor M2 also can be respectively a kind of two-carrier junction transistors (BJT).
In addition, it should be noted that PTAT in the embodiment shown in fig. 1 produces part, though couple resistive element R1～R3 to produce the branch current I of two positive temperature coefficient (PTC)s with two junction transistor Q1, Q2
12And I
11For example is explained, yet PTAT current generation section of the present invention divides 112 to be not restricted to this.There are all different circuits structures all to can be used as the PTAT current generation section and divide 112, produce a positive coefficient electric current and a zero-temperature coefficient reference voltage to arrange in pairs or groups each other with operational amplifier 114 and shared current source 116.
For example, in other embodiment, the resistive element that can use plural junction transistor to couple proper number produces the branch current of plural positive temperature coefficient (PTC) and forms first electric current I
1, and also one of them converts reference voltage Vref at least with these branch currents.More specifically; The characteristic of the negative temperature coefficient of cross-pressure that can several junction transistors is the basis; And produce the branch current and second cross-pressure of several positive temperature coefficient (PTC)s through the resistance characteristic of several resistive elements; Can the transistor cross-pressure of negative temperature coefficient and the resistance cross-pressure addition of positive temperature coefficient (PTC) be produced the reference voltage of a zero-temperature coefficient, and let these branch currents form first electric current I of positive temperature coefficient (PTC)
1
Or simply say it; Every through producing in the PTAT current generating circuit of positive temperature coefficient (PTC) electric current with the reference voltage that produces zero-temperature coefficient, all possibly take out relevant portion (being other part except that bias current source and operational amplifier for example) and be used as the PTAT current generation section and divide 112.
In addition, also must note, share current source 116 and bias current source 122 and also be not limited to thin portion circuit structure shown in Figure 1.There are all different current sources can be arranged in bandgap reference circuit 110 and the voltage-to-current conversion circuit 120 so that both to be provided required electric current.Also there is the bias current source of all different structures can carry out the translation function of negative temperature coefficient voltage to negative temperature parameter current with operational amplifier 124 operate together.
In addition; Also must note, operational amplifier 114 and 124 also can be other etc. the voltage circuit, as long as respectively suitably the voltage Va of Control Node A equal the voltage Vb of Node B; And the voltage Vc of Control Node C equals the voltage Va of node A, can reach respectively to produce the positive temperature coefficient (PTC) electric current I
1And negative temperature parameter current I
2Purpose.
In addition, though the foregoing description couples voltage source V DD with the end of the base stage of junction transistor Q1 and Q2 and collection utmost point ground connection, feedback transistor M1, so that reference current Iref is first electric current I from sharing that current source shunts away outward
1And second electric current I
2For example is explained, yet the present invention is not also as limit.For example; In other embodiment, also can change transistor M1 and M2 into nmos pass transistor, junction transistor Q1 and Q2 change NPN transistor into; And with the base stage of junction transistor Q1 and Q2 and collection utmost point reconfiguration to high voltage (VDD), feedback transistor M1 changes and is coupled to low-voltage (GND).As a result, reference current Iref changes by first electric current I
1And second electric current I
2Past shared current source direction is confluxed and is got.
In addition; Explanation according to the foregoing description also can be analogized; Every with one through producing the PTAT current generating circuit of positive temperature coefficient (PTC) electric current with the reference voltage that produces zero-temperature coefficient; Extraly pull out one tunnel negative temperature parameter current to a voltage-to-current conversion circuit, all possibly put into practice a reference voltage and reference current generating circuit by its bias current source.
In brief; As long as bandgap reference circuit can provide temperature independent reference voltage; And shared current source is when providing the required positive temperature coefficient (PTC) electric current of generation reference voltage; Also produce one tunnel negative temperature parameter current voltage-to-current conversion circuit of flowing through, draw temperature independent reference current, neither disengaging technical scope of the present invention so that converge two electric currents.
Please with reference to Fig. 2, it illustrates the process flow diagram according to the reference voltage of preferred embodiment of the present invention and reference current production method.At first, in step 200, has first electric current I of positive temperature coefficient (PTC) through generation
1Have the reference voltage Vref of zero-temperature coefficient with generation, also produce a back bias Vf and a negative temperature coefficient voltage Va simultaneously.In addition, in step 202, negative temperature coefficient voltage Va is converted into second electric current I with negative temperature coefficient
2At last, in step 204, produce a reference current Iref according to back bias Vf.Reference current Iref splits into first electric current I in the step 200
1With second electric current I that splits into step 202
2As a result, reference current Iref can be through first and second electric current I of confluxing
1And I
2And has a null in fact temperature coefficient.The correlative detail of each step can not given unnecessary details at this with reference to the explanation of figure 1 each corresponding component in addition.
Sum up above-mentioned; In above embodiment; At first utilize a bandgap reference circuit to produce temperature independent reference voltage, a voltage-to-current conversion circuit is set again produces negative temperature parameter current, wherein voltage-to-current conversion circuit and bandgap reference circuit are shared a current source.Therefore, this shared current source is flowed through the bandgap reference circuit except one tunnel positive temperature coefficient (PTC) electric current is provided, also extra one tunnel negative temperature parameter current current converter circuit of flowing through that provides, and the result can be confluxed the two-way electric current and produced temperature independent reference current.
Thus; Different reference need not be set produce circuit and reference current generating circuit; Also need not produce reference voltage (or reference current) earlier and in addition it duplicated and converts into reference current (or reference voltage) again, and single current source capable of using comes to produce simultaneously temperature independent reference voltage and reference current.In other words, producing reference voltage is mutual integration with producing reference current in circuit design in idea.As a result, compared to conventional art, the foregoing description is simplified circuit structure greatly, reduces circuit area and power consumption, and reduces the circuit manufacturing cost.
In sum, though the present invention with the preferred embodiment exposure as above, yet it is not in order to limit the present invention.Have common knowledge the knowledgeable in the technical field under the present invention, do not breaking away from the spirit and scope of the present invention, when can make the various changes that are equal to or.Therefore, protection scope of the present invention is when looking accompanying being as the criterion that replacement the application claim scope defined.
Claims (12)
1. reference voltage and reference current generating circuit is characterized in that, comprising:
One bandgap reference circuit, it produces the reference voltage with a zero-temperature coefficient through one first electric current that is configured to have through generation a positive temperature coefficient (PTC); And
One voltage-to-current conversion circuit, it is coupled to a node of this bandgap reference circuit, and is one second electric current with a negative temperature coefficient through the voltage transitions that is configured to a negative temperature coefficient of node,
Wherein this bandgap reference circuit and this voltage-to-current conversion circuit comprise that one shares current source; It has the feedback transistor reference current that circulates; Wherein this reference current splits into this first electric current in this bandgap reference circuit and splits into this second electric current in this voltage-to-current conversion circuit, and this reference current has a null in fact temperature coefficient through this first and second electric current that confluxes.
2. reference voltage according to claim 1 and reference current generating circuit is characterized in that, this bandgap reference circuit inside also produces a back bias, should share current source with control and produce this reference current.
3. reference voltage according to claim 1 and reference current generating circuit is characterized in that, this bandgap reference circuit also comprises:
One is proportional to absolute temperature current generation section branch, and it is coupled to this shared current source, and forms this first electric current through the branch current that is configured to produce a plurality of positive temperature coefficient (PTC)s, and also one of them converts this reference voltage at least with these branch currents; And
One operational amplifier; It has two input ends and is coupled to this and is proportional to two nodes that the absolute temperature current generation section divides so that the voltage level of this two node is equal in fact, and has an output terminal and feed back to this shared current source and should share this reference current of current source output with control.
4. reference voltage according to claim 3 and reference current generating circuit is characterized in that, this is proportional to absolute temperature current generation section branch and comprises:
A plurality of junction transistors have a plurality of first cross-pressures of negative temperature coefficient in order to generation; And
A plurality of resistive elements, it is coupled to this a plurality of junction transistors, in order to a plurality of second cross-pressures that produce these branch currents and have positive temperature coefficient (PTC),
Wherein these first cross-pressures at least one of them and these second cross-pressures one of them adds and becomes this reference voltage at least.
5. reference voltage according to claim 4 and reference current generating circuit is characterized in that:
These junction transistors comprise first and second junction transistor, have first to the 3rd end respectively, and wherein second end of this first and second junction transistor couples mutually, and
These resistive elements comprise:
First resistive element, one of which end are coupled to first end of this second junction transistor;
Second resistive element, the one of which end is coupled to the other end of this first resistive element, and the other end is coupled to this shared current source; And
The 3rd resistive element, one of which end are coupled to first end of this first junction transistor, and the other end is coupled to this shared current source.
6. reference voltage according to claim 3 and reference current generating circuit is characterized in that, this feedback transistor of this shared current source is coupled to a voltage source, this is proportional to, and the absolute temperature current generation section is divided and this output terminal of this operational amplifier.
7. reference voltage according to claim 1 and reference current generating circuit is characterized in that, this voltage-to-current conversion circuit comprises:
One operational amplifier, it has this node that first input end is coupled to this bandgap reference circuit, and has second input end and an output terminal; And
One bias current source, it is coupled to this shared current source, and is coupled to this second input end and this output terminal of this operational amplifier, with this second electric current that circulates according to this negative temperature coefficient voltage at this node place.
8. reference voltage according to claim 7 and reference current generating circuit is characterized in that, this bias current source comprises:
One bias transistor, it has first end and is coupled to this operational amplifier, and second end is coupled to this shared current source, and has one the 3rd end; And
One resistive element, one of which end are coupled to the 3rd end of this bias transistor and this second input end of this operational amplifier.
9. reference voltage and reference current generating circuit is characterized in that, comprising:
One bandgap reference circuit, its through be configured to through one first electric current that generation has a positive temperature coefficient (PTC) flow through a first node of this bandgap reference circuit produce have a zero-temperature coefficient a reference voltage in this first node output; And
One voltage-to-current conversion circuit, it is coupled to a Section Point of this bandgap reference circuit, and is one second electric current with a negative temperature coefficient this first node of flowing through through being configured to voltage transitions with a negative temperature coefficient of this Section Point;
Wherein this bandgap reference circuit and this voltage-to-current conversion circuit comprise that one shares current source, and it is coupled to this first node, in order to export a reference current;
Wherein this reference current splits into this first electric current in this bandgap reference circuit and splits into this second electric current in this voltage-to-current conversion circuit in this first node, and this reference current has a null in fact temperature coefficient through this first and second electric current that confluxes.
10. reference voltage according to claim 9 and reference current generating circuit is characterized in that the inside of this bandgap reference circuit also produces a back bias, should share current source with control and produce this reference current.
11. reference voltage and reference current generating circuit is characterized in that, comprise
One bandgap reference circuit in order to export a temperature independent reference voltage, comprising:
One is proportional to absolute temperature current generation section branch, comprising:
First and second junction transistor couples each other; And
First to the 3rd resistive element is respectively coupled between this second junction transistor and this second resistive element, between this first resistive element and the first node, and between this first junction transistor and this first node; And
One first operational amplifier, it has first input end and is coupled between this first resistive element and this second resistive element, and second input end is coupled between the 3rd resistive element and this first junction transistor, and has an output terminal; And
One voltage-to-current conversion circuit comprises:
One second operational amplifier, it has first input end and is coupled between this first junction transistor and the 3rd resistive element, and has second input end and an output terminal; And
One bias current source, it has a bias transistor, and it has this output terminal that first end is coupled to this second operational amplifier, and second end is coupled to this first node, and has one the 3rd end; And
One the 4th resistive element, one of which end are coupled to the 3rd end of this bias transistor and this second input end of this second operational amplifier;
Wherein this bandgap reference circuit and this voltage-to-current conversion circuit comprise that also one shares current source; It comprises a feedback transistor; It is coupled to a voltage source, this first node, and this output terminal of this first operational amplifier, in order to export a temperature independent reference current.
12. reference voltage and reference current production method is characterized in that, comprising:
First electric current that has positive temperature coefficient (PTC) through generation has the reference voltage of zero-temperature coefficient with generation, also produces a back bias and a negative temperature coefficient voltage simultaneously;
With this negative temperature coefficient voltage transitions is second electric current with negative temperature coefficient; And
Produce a reference current according to this back bias, wherein this reference current system has a null in fact temperature coefficient through conflux this first electric current and this second electric current.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201010508016.5A CN102419609B (en) | 2010-09-27 | 2010-09-27 | Reference voltage and reference current generating circuit |
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| CN201010508016.5A CN102419609B (en) | 2010-09-27 | 2010-09-27 | Reference voltage and reference current generating circuit |
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| CN102419609A true CN102419609A (en) | 2012-04-18 |
| CN102419609B CN102419609B (en) | 2015-07-08 |
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| CN103941792A (en) * | 2013-01-21 | 2014-07-23 | 西安电子科技大学 | Band gap voltage reference circuit |
| WO2014190670A1 (en) * | 2013-05-31 | 2014-12-04 | 国家电网公司 | Method and circuit for providing zero-temperature coefficient voltage and current |
| CN106840446A (en) * | 2015-12-04 | 2017-06-13 | 华邦电子股份有限公司 | Temperature sensing circuit |
| CN107066023A (en) * | 2015-11-16 | 2017-08-18 | 德州仪器德国股份有限公司 | Low voltage-current mode band-gap circuit and method |
| CN110865677A (en) * | 2019-12-09 | 2020-03-06 | 北京集创北方科技股份有限公司 | Reference source circuit, chip, power supply and electronic equipment |
| CN112034920A (en) * | 2019-06-04 | 2020-12-04 | 极创电子股份有限公司 | Voltage generator |
| CN112068634A (en) * | 2019-06-11 | 2020-12-11 | 瑞昱半导体股份有限公司 | Reference voltage generating device |
| WO2021073126A1 (en) * | 2019-10-16 | 2021-04-22 | 长鑫存储技术有限公司 | In-chip reference current generation circuit |
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| US7456678B2 (en) * | 2006-10-10 | 2008-11-25 | Atmel Corporation | Apparatus and method for providing a temperature compensated reference current |
| US20100060345A1 (en) * | 2008-09-08 | 2010-03-11 | Faraday Technology Corporation | Reference circuit for providing precision voltage and precision current |
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| CN103941792A (en) * | 2013-01-21 | 2014-07-23 | 西安电子科技大学 | Band gap voltage reference circuit |
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| CN107066023A (en) * | 2015-11-16 | 2017-08-18 | 德州仪器德国股份有限公司 | Low voltage-current mode band-gap circuit and method |
| CN106840446A (en) * | 2015-12-04 | 2017-06-13 | 华邦电子股份有限公司 | Temperature sensing circuit |
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| CN112034920A (en) * | 2019-06-04 | 2020-12-04 | 极创电子股份有限公司 | Voltage generator |
| CN112034920B (en) * | 2019-06-04 | 2022-06-17 | 极创电子股份有限公司 | Voltage generator |
| CN112068634A (en) * | 2019-06-11 | 2020-12-11 | 瑞昱半导体股份有限公司 | Reference voltage generating device |
| WO2021073126A1 (en) * | 2019-10-16 | 2021-04-22 | 长鑫存储技术有限公司 | In-chip reference current generation circuit |
| CN110865677A (en) * | 2019-12-09 | 2020-03-06 | 北京集创北方科技股份有限公司 | Reference source circuit, chip, power supply and electronic equipment |
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