CN102414849A - Light emitting diode and method for producing a light emitting diode - Google Patents
Light emitting diode and method for producing a light emitting diode Download PDFInfo
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- CN102414849A CN102414849A CN2010800185563A CN201080018556A CN102414849A CN 102414849 A CN102414849 A CN 102414849A CN 2010800185563 A CN2010800185563 A CN 2010800185563A CN 201080018556 A CN201080018556 A CN 201080018556A CN 102414849 A CN102414849 A CN 102414849A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
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- H—ELECTRICITY
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
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- H—ELECTRICITY
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
Abstract
A light emitting diode is disclosed, comprising a semiconductor body (1), wherein the semiconductor body (1) comprises an active region (11) provided for producing radiation, a carrier body (2), which is fastened to the semiconductor body (1) on an upper side (1a) of the semiconductor body (1), wherein the carrier body (2) comprises a luminescence conversion material, a mirror layer (3), which is applied to the semiconductor body (1) on an underside (1b) of the semiconductor body (1) facing away from the upper side (1a), and two contact layers (4a, 4b), wherein a first (4a) contact layer is connected to an n-conducting region (13) of the semiconductor body (1), and a second contact layer (4b) is connected to a p-conducting region (12) of the semiconductor body (1) in an electrically conductive manner.
Description
A kind of light-emitting diode has been proposed.Light-emitting diode is the cold light diode that comprises at least one active area, in active area, in the work of light-emitting diode, produces electromagnetic radiation.
According at least one form of implementation of light-emitting diode, light-emitting diode comprises semiconductor body, and wherein semiconductor body comprises the active area that is designed for the generation radiation.Semiconductor body is the growth of extension ground for example.
According at least one form of implementation of light-emitting diode, light-emitting diode comprises the supporting mass body.The supporting mass body is that machinery is from supporting.That is to say that the supporting mass body is self-supporting mechanically, its supporting member that need not to add is used for support bearing body body.For example, the supporting mass body is the supporting course of rigidity mechanically.
The supporting mass body is fixed on the semiconductor body on the upside of semiconductor body.The supporting mass body for example can be fixed on the semiconductor body by linkage unit.The supporting mass body especially is not the growth substrates of semiconductor body.Or rather, possible is that growth substrates is removed from semiconductor body.
So the supporting mass body for example is adhered on the semiconductor body on the upside of semiconductor body.Possible in addition is that supporting mass body and semiconductor body are through being connected to each other like anodic bonding or the direct method that engages.In this situation, linkage unit is not set between supporting mass body and semiconductor body.
The supporting mass body is mechanically supported semiconductor body.That is to say that the supporting mass body is that the light-emitting diode that has supporting mass body and semiconductor body is given its mechanical stability.
According at least one form of implementation of supporting mass body, the supporting mass body comprises the luminescent conversion material.The luminescent conversion material for example can be used as thin layer and is applied on the outer surface of supporting mass body.Possible in addition is that the luminescent conversion material is introduced in the supporting mass body with the form of particle and for example dissolving there.At last possible is that the supporting mass body is made up of the luminescent conversion material.So the supporting mass body for example can be made up of ceramic luminescent conversion material.
According at least one form of implementation of light-emitting diode, light-emitting diode comprises the mirror layer, and it is applied on the semiconductor body on the downside that deviates from upside of semiconductor body.The mirror layer is designed for and in the work of light-emitting diode, is reflected in the electromagnetic radiation that produces in the active area.In addition, the mirror layer is designed for wavelength Conversion is carried out in reflection by the luminescent conversion material light.For this reason, the mirror layer for example can being combined to form by the sequence of layer of dielectric material, dielectric material, metal or said material.
According at least one form of implementation of light-emitting diode, light-emitting diode comprises two contact layers.
First contact layer of two contact layers is connected with the n conductive region of semiconductor body at this, and second contact layer of contact layer is connected with the p conductive region conduction of semiconductor body.Can electrically contact light-emitting diode from the outside through contact layer, and active area is provided for the required electric current of driven for emitting lights diode.
Possible at this is that two contact layers are arranged on the side that deviates from semiconductor body of mirror layer.For the mirror layer by the electric conducting material situation, contact layer and the mirror layer electric insulation that form of metal for example.If the mirror layer is formed by electric conducting material, then also possible in addition is that the part of mirror layer forms contact layer.
Possible in addition is that first contact layer is arranged on the side that deviates from semiconductor body of mirror layer.So second contact layer can be arranged on the side that deviates from semiconductor body of supporting mass body.
According at least one form of implementation of light-emitting diode, light-emitting diode comprises semiconductor body, and wherein semiconductor body comprises the active area that is designed for the generation radiation.In addition, light-emitting diode comprises the supporting mass body, and it is fixed on the semiconductor body on the upside of semiconductor body, and wherein the supporting mass body comprises the luminescent conversion material.In addition, light-emitting diode comprises the mirror layer, and it is applied on the semiconductor body on the downside that deviates from upside of semiconductor body.Light-emitting diode comprises two contact layers in addition, and wherein first contact layer of contact layer is connected with the n conductive region conduction of semiconductor body, and second contact layer of contact layer is connected with the p conductive region conduction of semiconductor body.
The supporting mass body of light-emitting diode advantageously is responsible for difference in functionality in light-emitting diode:
-supporting mass body is formed for the supporting mass body of semiconductor body, and forms the parts of the machinery support of light-emitting diode thus.
-supporting mass body forms transfer medium in addition, by its can with the electromagnetic radiation that produces in the active area convert at least in part other, the radiation of preferred higher wavelength.For example, light-emitting diode is suitable for launching at work white mixed light in this way, and it is made up of light of launching again through the luminescent conversion material and the electromagnetic radiation that in active area, produces.
-in addition, the supporting mass body can form scattering center.If the supporting mass body is for example formed by ceramic luminescent conversion material, then it also has the light scattering effect except the frequency inverted characteristic, and it helps from the mixing of the electromagnetic radiation of light-emitting diode outgoing.Possible in addition is that light-scattering material is incorporated in the supporting mass body or is applied on the supporting mass body.
-in addition, the supporting mass body is formed for the protective layer of semiconductor body, and it can protect semiconductor body to avoid machinery and/or chemical damage.
According at least one form of implementation of light-emitting diode, the electromagnetic radiation of the light-emitting diode that in active area, produces at work is only through supporting mass body coupling output.That is to say that the electromagnetic radiation that in active area, produces at work only can be left light-emitting diode through the supporting mass body.In order to realize this point, can take measures, it stops the side coupling output of electromagnetic radiation through chip.
According at least one form of implementation of light-emitting diode, finish with at least one side of semiconductor body with flushing at least one side of supporting mass body.The side of semiconductor body is following face at this, this face from the upside of semiconductor body extend to downside and for example with the bottom surface of semiconductor body the coverage rate of its downside and semiconductor body above that side be connected.Identical ground, the side of supporting mass body is the face that laterally forms the supporting mass body on border.At least one side of supporting mass body can be finished with the side of semiconductor body now with flushing.Possible under extreme case is that finish with all sides or the whole side of semiconductor body with flushing all sides of supporting mass body or whole side.Semiconductor body for example has identical cross section with the supporting mass body in this situation, they are not outstanding each other.Supporting mass body and semiconductor body be in horizontal direction in the outstanding each other form of implementation therein, also is appreciated that to be the cross section of wherein semiconductor body and the supporting mass body form of implementation of deviation maximum 10% each other.
According at least one form of implementation of light-emitting diode, light-emitting diode comprises cap rock, and it covers at least one side of semiconductor body fully.Preferably, so cap rock covers whole sides of semiconductor body fully.Cap rock can be designed for the side of protection semiconductor body on the one hand and avoid chemistry and/or mechanical load.Possible in addition is that cap rock does not make up on transmitted radiation ground, makes electromagnetic radiation not leave semiconductor body through the side of semiconductor body.So cap rock for example is the layer of reflected radiation, it can for example silica, silicon nitride or aluminium oxide form by dielectric material.At last possible is that cap rock is embodied as anti-reflection layer.In this situation, it is desirable for electromagnetic radiation exports from wherein being coupled through the side of semiconductor body.So electromagnetic radiation can not only be left light-emitting diode through the supporting mass body, but do not left through the side by conversion ground.
According at least one form of implementation of light-emitting diode, cap rock covers supporting mass body and/or mirror layer laterally.That is to say that possible is that cap rock not only extends along the side of semiconductor body, but also covers the side of supporting mass body and mirror layer.Especially when cap rock reflected radiation ground makes up, can be thus with most especially electromagnetic radiation towards the supporting mass proprioceptive reflex.In addition, cap rock also helps chemistry and/or mechanical protection supporting mass body and/or mirror layer in this way.
According at least one form of implementation of light-emitting diode, between semiconductor body and supporting mass body, be provided with coupling-out structure, wherein the refractive index of the material of coupling-out structure and semiconductor body deviation maximum 30% each other.Coupling-out structure for example as truncated pyramid be applied to semiconductor body on the radiation exit facet of supporting mass body.Electromagnetic radiation can get into the coupling-out structure from semiconductor body with only little optical loss owing to the little or non-existent refringence between the material of the material of coupling-out structure and semiconductor body.Coupling-out structure preferably has like downside, the forming greater than 0 ° and less than 90 ° angle towards the radiation exit facet of supporting mass body of these sides and semiconductor body.Electromagnetic radiation can avoided total reflection, promptly leave coupling-out structure with bigger probability under than the semiconductor context that is not having coupling-out structure.So coupling-out structure can be by the alligatoring portion that constitutes and for example be embodied as semiconductor body with the semiconductor body identical materials at this.
According at least one form of implementation of light-emitting diode, the material of coupling-out structure is different with the material of semiconductor body.Coupling-out structure for example comprises one of following material or is made up of one of following material: titanium oxide, zinc sulphide, aluminium nitride, carborundum, boron nitride, tantalum oxide.
According at least one form of implementation of light-emitting diode, the outer surface of supporting mass body applies by alligatoring and/or by anti-reflection coating.For example, the supporting mass body handles towards the side of semiconductor body and/or the side that deviates from semiconductor body in the manner described.Thus, reduced the possibility of ELECTROMAGNETIC RADIATION REFLECTION when passing the supporting mass body.In a word, output to the possibility that the neutralization of supporting mass body is come out from the supporting mass body so improved optical coupling thus.
According at least one form of implementation of light-emitting diode, between semiconductor body and supporting mass body, be provided with linkage unit, it is based upon the mechanical connection between semiconductor body and the supporting mass body.Linkage unit for example can be the adhesive of transmitted radiation, by it semiconductor body is fixed on the supporting mass body.This is responsible for the resilient especially connection between supporting mass body and the semiconductor body, and this proves favourable when especially in the work of light-emitting diode, heating semiconductor body.Possible in addition is that at the applied layer on the outer surface of supporting mass body of semiconductor body, it for example is made up of aluminium oxide.Identical layer also can be applied to the supporting mass body on the outer surface of semiconductor body.So two layers can or directly engage by joint method such as anodic bonding and be connected to each other, and make the layer that linkage unit constitutes is set between supporting mass body and semiconductor body.
According at least one form of implementation of light-emitting diode, the refractive index deviation at least 30% of the refractive index of linkage unit and semiconductor body.This proves particularly advantageous when coupling-out structure is arranged between semiconductor body and the supporting mass body.In this case, the linkage unit that for example has than the significantly lower refractive index of material of the material of semiconductor body and coupling-out structure can center on coupling-out structure on the outer surface of its exposure.Because the very similarly refractive index of the refringence between semiconductor body and linkage unit and semiconductor body and coupling-out structure, the electromagnetic radiation preferred coupled is input in the coupling-out structure.
According at least one form of implementation of light-emitting diode, from contact layer raceway groove to be introduced the semiconductor body, it is filled with electric conducting material.Raceway groove preferably also passes mirror layer and/or supporting mass body at this.That is to say that the raceway groove that has electric conducting material extends to the semiconductor body from contact layer, make that semiconductor body can be through contact layer by n side and p side contacts from its downside and/or its upside.Especially from the one of at least of contact layer at least one raceway groove is introduced semiconductor body and/or caused semiconductor body, it is filled with electric conducting material.Electric conducting material especially is connected with the semiconductor body conduction.Can electrically contact semiconductor body through electric conducting material.
Raceway groove is the recess in mirror layer and/or supporting mass body and/or semiconductor body especially.The outer surface towards mirror layer and/or supporting mass body and/or semiconductor body of recess can the electricity consumption insulator-coated.In recess, introduce electric conducting material, for example metal then at least in part.
A kind of method that is used to make light-emitting diode has been proposed in addition.Preferably, make light-emitting diode described herein by this method.That is to say, also open and vice versa for disclosed all characteristics of light-emitting diode for method.According to a form of implementation, this method may further comprise the steps:
-semiconductor body is provided,
-on the upside of semiconductor body, apply the supporting mass body,
The growth substrates of-stripping semiconductor body,
-generation mirror layer on the downside that deviates from the supporting mass body of semiconductor body,
The raceway groove of mirror layer and/or supporting mass body entering semiconductor body is passed through in-generation,
-fill raceway groove with electric conducting material, and
-make up contact layer, wherein contact layer is connected with the electric conducting material conduction.
This method is preferably implemented with illustrated order at this.Especially, the raceway groove that is directed in the semiconductor body preferably makes up after applying mirror layer and/or supporting mass body.
The supporting mass body preferably remains on the semiconductor body and especially comprises the luminescent conversion material, makes it can have difunctional as supporting mass body and optics.
To further set forth light-emitting diode described herein and the method that is used to make light-emitting diode described herein by embodiment and accompanying drawing below.
Figure 1A, 1B and 2 have gone out the embodiment of light-emitting diode described herein by schematic cross sectional representation.
Fig. 3 A to 3F has gone out the embodiment that is used to make the method for light-emitting diode described herein by schematic cross sectional representation.
Identical in the accompanying drawings, similar or act on identical parts and be provided with identical Reference numeral.Accompanying drawing and in the accompanying drawings shown in element magnitude relationship each other can not be regarded as conforming with ratio.Or rather, each element is in order more to know and/or can be illustrated large for better understanding.
Figure 1A has gone out light-emitting diode described herein by schematic cross sectional representation.Light-emitting diode comprises semiconductor body 1.Semiconductor body 1 comprises n doped regions 13, p doped regions 12 and active area 11, and this active area is arranged between n doped regions 13 and the p doped regions 12.In the work of light-emitting diode, in active area 11, produce electromagnetic radiation.Electromagnetic radiation can for example be left semiconductor body 1 on the side 1a above that.Being arranged in this and also can exchanging of n doped regions and p doped regions.
On the upside 1a of semiconductor body, supporting mass body 2 is applied on the semiconductor body 1.At this, supporting mass body 2 by ceramic luminescent conversion material for example YAG:Ce constitute.Supporting mass body 2 can be bonding or be joined on the semiconductor body 1.At this, supporting mass body 2 is applied on the side of original growth substrates of deviating from of semiconductor body 1.
The side 1c of semiconductor body 1 is provided with cap rock 5; It makes up on this reflectivity ground; Make in active area 11 electromagnetic radiation that produces at work on the 1c of side from cap rock 5 to back reflective to semiconductor body, for example towards supporting mass body 2 or mirror layer 3.Cap rock 5 can and be lateral to mirror layer 3 along the side 2c of the side 1c of semiconductor body and supporting mass body and extend with contact layer 4a, 4b.
The side that deviates from semiconductor body of mirror layer 3 is provided with contact layer 4a, 4b, can electrically contact light-emitting diode through it.
In a word, through engaging the light-emitting diode that Figure 1A describes, realized a kind of compact especially light-emitting diode, it for example can directly be installed on the circuit board, and need not to be used for the other housing of light-emitting diode.The characteristic of light-emitting diode for example is, in described light-emitting diode, saved silicones for example as the mould material of light-emitting diode or as the supporting mass of luminescent conversion material.That is to say that light-emitting diode described herein does not have silicones.Light-emitting diode is characterised in that the compact structure and the little size and the following fact thereof: the supporting member that except the supporting mass body, need not to add.Supporting mass body 2 is mechanically supported semiconductor body 1, makes that possible is growth substrates to be removed and obtained thus the thin especially structure of semiconductor body from the layer of the semiconductor body of extension manufacturing.
Further set forth another embodiment of light-emitting diode described herein in conjunction with Figure 1B.Be different from the embodiment that combines Figure 1A to describe, light-emitting diode can never same side contacts at this.
The side that deviates from semiconductor body 1 of supporting mass body 2 is provided with the first contact layer 4a, can electrically contact light-emitting diode through it.From contact layer 4a, raceway groove 9 extends in the n doped regions 13.Can as an alternative or be additional to raceway groove 9, supporting mass body 2 also can perhaps be removed in the zone of the first contact layer 4a in thinning.
The side that deviates from semiconductor body 1 of mirror layer 3 is provided with the second contact layer 4b, and it is the mirror layer 3p side ground contact semiconductor body through conducting electricity for example.Can also can raceway groove 9 be guided towards p doped regions 12 through the mirror layer as an alternative.
Further set forth another embodiment of light-emitting diode described herein in conjunction with Fig. 2.The embodiment that is different from Figure 1A is provided with a plurality of coupling-out structures 6 between semiconductor body 1 and supporting mass body 2 in the embodiment of Fig. 2.Coupling-out structure 6 for example is embodied as truncated cone-shaped, and it has the side, and these are laterally inclined to extend on the upside 1a of radiation exit facet ground at semiconductor body 1.Coupling-out structure is made up of the dielectric material that has with the similar refractive index of semiconductor body.If semiconductor body is for example based on gallium nitride, then titanium oxide or tantalum oxide are suitable for forming coupling-out structure 6 especially well.Electromagnetic radiation is from semiconductor body gets into coupling-out structure 6, and electromagnetic radiation can be based on the side that tilts and the 2 coupling outputs from these coupling-out structures towards the supporting mass body especially effectively.For supporting mass body 2 is connected with semiconductor body 1, coupling-out structure 6 is centered on by linkage unit 7, and it for example can be transparent adhesives or ceramic material.So supporting mass body 2 for example can be by bonding or be connected with semiconductor body 1 by engaging.Linkage unit 7 this can have than semiconductor body based on the refractive index of refractile body little at least 30% of material.Supporting mass body 2 preferably is made up of ceramic material, and it comprises the luminescent conversion material or is made up of this luminescent conversion material.
Further set forth by schematic sectional view in conjunction with Fig. 3 A to 3F and to be used to make the embodiment of the method for described light-emitting diode here.
In first method step, supporting mass body 2 is applied to the upside that deviating from of semiconductor body is used for the growth substrates 14 of semiconductor body 1, and for example is connected (referring to Fig. 3 A and 3B) with this semiconductor body through joint.
Showing growth substrates 14 in conjunction with Fig. 3 C for example comes to remove from semiconductor body 1 by laser-stripping method.
Fig. 3 D shows mirror layer 3 is applied on the downside that deviates from supporting mass body 2 of semiconductor body 1 subsequently.
Showing the mirror layer in conjunction with Fig. 3 E is incorporated in the semiconductor body 1 through the mirror layer by structuring and raceway groove 9.Electric conducting material 91 is introduced in the raceway groove 9.Also possible at this is between two zones of mirror layer 3, to introduce insulating barrier 8.Insulating barrier 8 is formed by electrical insulating material.It is particularly advantageous in this method step when mirror layer itself is made up of electric conducting material.In this case, can save additional contact layer 4a, 4b, and light-emitting diode can electrically contact through mirror layer 3 directly.
Show through applying contact site 4a, 4b in conjunction with Fig. 3 F and to make light-emitting diode and cap rock 5 is applied on the side 1c of semiconductor body.
Likewise, also can make the embodiment described in conjunction with Figure 2 of light-emitting diode described herein shown in Fig. 3 A to 3F as combining, wherein with semiconductor body 1 with before supporting mass body 2 is connected, generation coupling-out structure 6 on semiconductor body 2.Coupling-out structure 6 for example can be made by mask technique.
Possible in addition is that the embodiment that combination Figure 1B of light-emitting diode described herein describes makes by said method, wherein in mirror layer 3 and/or supporting mass body 2, produces raceway groove 9.
The present invention is not confined to this through the description by embodiment.This characteristic or rather, the present invention includes the new arbitrarily characteristic and the combination in any of the characteristic in the combination in any of characteristic, the especially claim, even perhaps should not explained clearly in combination itself in claim or embodiment.
Present patent application requires the priority of German patent application 102009019161.5, and its disclosure is incorporated into this by reference.
Claims (15)
1. light-emitting diode has:
-semiconductor body (1), wherein semiconductor body (1) comprises the active area (11) that is designed for the generation radiation,
-supporting mass body (2) is fixed on the semiconductor body (1) on its upside in semiconductor body (1) (1a), and wherein supporting mass body (2) comprises the luminescent conversion material, especially constitute by ceramic luminescent conversion material,
-mirror layer (3), it is applied to semiconductor body (1) on the downside that deviates from upside (1a) (1b) of semiconductor body (1), and
-two contact layers (4a, 4b), first contact layer (4a) of wherein said contact layer is connected with the n conductive region (13) of semiconductor body (1), and second contact layer (4b) of said contact layer is connected with p conductive region (12) conduction of semiconductor body (1).
2. according to the described light-emitting diode of a last claim; Wherein with at least one raceway groove (9) from said contact layer (4a; Introducing one of at least semiconductor body (1) and/or guiding semiconductor body (1) into 4b); Said raceway groove is filled with electric conducting material (91), and (4a one of 4b) conducts electricity connection for said material and semiconductor body (1) and said contact layer.
3. according to the described light-emitting diode of a last claim, wherein said at least one raceway groove (9) passes mirror layer (3).
4. according to the described light-emitting diode of one of above-mentioned two claims, wherein said at least one raceway groove (9) passes supporting mass body (2).
5. according to one of aforesaid right requirement described light-emitting diode, the electromagnetic radiation that wherein in active area (11), produces at work can only be left light-emitting diode through supporting mass body (2).
6. according to one of aforesaid right requirement described light-emitting diode, wherein finish with at least one side (1c) of semiconductor body (1) with flushing at least one side (2c) of supporting mass body (2).
7. according to one of aforesaid right requirement described light-emitting diode, wherein cap rock (5) covers at least one side (1c) of semiconductor body (1) fully.
8. according to the described light-emitting diode of a last claim, wherein cap rock (5) laterally hides supporting mass body (2) and/or mirror layer (3).
9. according to one of aforesaid right requirement described light-emitting diode, wherein supporting mass body (2) is made up of ceramic luminescent conversion material.
10. according to one of aforesaid right requirement described light-emitting diode; Wherein coupling-out structure (6) is arranged between semiconductor body (1) and the supporting mass body (2), wherein the refractive index of the material of coupling-out structure (6) and semiconductor body (1) deviation maximum 30% each other.
11. one of require described light-emitting diode according to aforesaid right, wherein the material of coupling-out structure (6) is different from the material of semiconductor body (1), and the material of coupling-out structure (6) comprises one of following material or is made up of it: TiO
2, ZnS, AlN, SiC, BN, Ta
2O
5
12. according to one of aforesaid right requirement described light-emitting diode, wherein between semiconductor body (1) and supporting mass body (2), be provided with linkage unit (7), it sets up the mechanical connection between semiconductor body (1) and the supporting mass body (2).
13. according to the described light-emitting diode of a last claim, the refractive index deviation at least 30% of the refractive index of linkage unit (7) and semiconductor body (1) wherein.
14. according to the described light-emitting diode of one of above-mentioned two claims, wherein linkage unit (7) centers on coupling-out structure (6) on the outer surface of its exposure.
15. a method that is used to make light-emitting diode has the following steps that have following order:
-semiconductor body (1) is provided,
-on the upside (1a) of semiconductor body (1), apply supporting mass body (2),
The growth substrates (14) of-stripping semiconductor body (1),
-go up generation mirror layer (3) at the downside that deviates from supporting mass body (2) (1b) of semiconductor body (1),
The raceway groove (9) of mirror layer (3) and/or supporting mass body (2) entering semiconductor body (1) and/or whereabouts semiconductor body (1) is passed in-generation,
-fill raceway groove (9) with electric conducting material (91)
-(4a, 4b), wherein (4a 4b) is connected with electric conducting material (91) conduction contact layer to make up contact layer.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102009019161.5 | 2009-04-28 | ||
| DE102009019161A DE102009019161A1 (en) | 2009-04-28 | 2009-04-28 | Light-emitting diode and method for producing a light-emitting diode |
| PCT/EP2010/053942 WO2010124915A1 (en) | 2009-04-28 | 2010-03-25 | Light emitting diode and method for producing a light emitting diode |
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| EP (1) | EP2425464A1 (en) |
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| CN (1) | CN102414849A (en) |
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- 2010-03-25 WO PCT/EP2010/053942 patent/WO2010124915A1/en active Application Filing
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- 2010-03-25 KR KR1020117028251A patent/KR20120011056A/en not_active Application Discontinuation
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| CN110998877A (en) * | 2017-07-13 | 2020-04-10 | 欧司朗Oled股份有限公司 | Optoelectronic component and method for producing an optoelectronic component |
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Also Published As
| Publication number | Publication date |
|---|---|
| DE102009019161A1 (en) | 2010-11-04 |
| KR20120011056A (en) | 2012-02-06 |
| EP2425464A1 (en) | 2012-03-07 |
| JP2012525690A (en) | 2012-10-22 |
| US20120112226A1 (en) | 2012-05-10 |
| WO2010124915A1 (en) | 2010-11-04 |
| US8796714B2 (en) | 2014-08-05 |
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