CN102414788B - 用纳米/微球光刻制造纳米/微线太阳能电池 - Google Patents
用纳米/微球光刻制造纳米/微线太阳能电池 Download PDFInfo
- Publication number
- CN102414788B CN102414788B CN201080018567.1A CN201080018567A CN102414788B CN 102414788 B CN102414788 B CN 102414788B CN 201080018567 A CN201080018567 A CN 201080018567A CN 102414788 B CN102414788 B CN 102414788B
- Authority
- CN
- China
- Prior art keywords
- spheroid
- substrate
- wiring
- emitter layer
- solar cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- YTCQFLFGFXZUSN-BAQGIRSFSA-N microline Chemical compound OC12OC3(C)COC2(O)C(C(/Cl)=C/C)=CC(=O)C21C3C2 YTCQFLFGFXZUSN-BAQGIRSFSA-N 0.000 title claims abstract description 35
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 28
- 239000002070 nanowire Substances 0.000 claims abstract description 71
- 239000000758 substrate Substances 0.000 claims abstract description 68
- 238000000034 method Methods 0.000 claims abstract description 53
- 239000002077 nanosphere Substances 0.000 claims abstract description 46
- 238000000059 patterning Methods 0.000 claims abstract description 26
- 230000008439 repair process Effects 0.000 claims abstract description 10
- 239000002019 doping agent Substances 0.000 claims description 35
- 238000000151 deposition Methods 0.000 claims description 19
- 238000009792 diffusion process Methods 0.000 claims description 17
- 239000010936 titanium Substances 0.000 claims description 15
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 14
- 229910052709 silver Inorganic materials 0.000 claims description 11
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 10
- 230000008021 deposition Effects 0.000 claims description 10
- 229910052719 titanium Inorganic materials 0.000 claims description 10
- 239000010949 copper Substances 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 238000004528 spin coating Methods 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- 229910052763 palladium Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 239000004793 Polystyrene Substances 0.000 claims description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- 239000007789 gas Substances 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- 229920002223 polystyrene Polymers 0.000 claims description 5
- 239000002243 precursor Substances 0.000 claims description 5
- 238000001704 evaporation Methods 0.000 claims description 4
- 230000008020 evaporation Effects 0.000 claims description 4
- 125000000524 functional group Chemical group 0.000 claims description 4
- 239000004816 latex Substances 0.000 claims description 4
- 229920000126 latex Polymers 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 239000000853 adhesive Substances 0.000 claims description 2
- 230000001070 adhesive effect Effects 0.000 claims description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 2
- 238000007747 plating Methods 0.000 claims description 2
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 claims description 2
- 238000007650 screen-printing Methods 0.000 claims description 2
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 claims description 2
- 239000000725 suspension Substances 0.000 claims description 2
- YUYCVXFAYWRXLS-UHFFFAOYSA-N trimethoxysilane Chemical compound CO[SiH](OC)OC YUYCVXFAYWRXLS-UHFFFAOYSA-N 0.000 claims description 2
- 238000000137 annealing Methods 0.000 claims 1
- 238000005516 engineering process Methods 0.000 abstract description 21
- 238000010586 diagram Methods 0.000 description 21
- 238000001020 plasma etching Methods 0.000 description 16
- 239000000463 material Substances 0.000 description 14
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 13
- 239000004005 microsphere Substances 0.000 description 13
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 12
- 238000005259 measurement Methods 0.000 description 11
- 239000010931 gold Substances 0.000 description 10
- 238000001878 scanning electron micrograph Methods 0.000 description 8
- 239000002800 charge carrier Substances 0.000 description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 6
- 230000008901 benefit Effects 0.000 description 6
- 238000001459 lithography Methods 0.000 description 6
- 239000011787 zinc oxide Substances 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 5
- 229910052698 phosphorus Inorganic materials 0.000 description 5
- 239000011574 phosphorus Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000007493 shaping process Methods 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- 239000003863 metallic catalyst Substances 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- BMYNFMYTOJXKLE-UHFFFAOYSA-N 3-azaniumyl-2-hydroxypropanoate Chemical compound NCC(O)C(O)=O BMYNFMYTOJXKLE-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000010790 dilution Methods 0.000 description 3
- 239000012895 dilution Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 238000001338 self-assembly Methods 0.000 description 3
- 239000010944 silver (metal) Substances 0.000 description 3
- 238000003892 spreading Methods 0.000 description 3
- 230000007480 spreading Effects 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 150000007942 carboxylates Chemical class 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000007306 functionalization reaction Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 2
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000000985 reflectance spectrum Methods 0.000 description 2
- 238000004626 scanning electron microscopy Methods 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- GPRLSGONYQIRFK-MNYXATJNSA-N triton Chemical compound [3H+] GPRLSGONYQIRFK-MNYXATJNSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 241000252506 Characiformes Species 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 1
- 239000004341 Octafluorocyclobutane Substances 0.000 description 1
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 238000006664 bond formation reaction Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 239000002061 nanopillar Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- BCCOBQSFUDVTJQ-UHFFFAOYSA-N octafluorocyclobutane Chemical compound FC1(F)C(F)(F)C(F)(F)C1(F)F BCCOBQSFUDVTJQ-UHFFFAOYSA-N 0.000 description 1
- 235000019407 octafluorocyclobutane Nutrition 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000000935 solvent evaporation Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 1
- 229960000909 sulfur hexafluoride Drugs 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- 229960004418 trolamine Drugs 0.000 description 1
- 238000009489 vacuum treatment Methods 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
- H01L31/035227—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum wires, or nanorods
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/813—Of specified inorganic semiconductor composition, e.g. periodic table group IV-VI compositions
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/827—Nanostructure formed from hybrid organic/inorganic semiconductor compositions
Abstract
Description
Claims (13)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410168382.9A CN103996739B (zh) | 2009-06-08 | 2010-06-01 | 用纳米/微球光刻制造纳米/微线太阳能电池 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/480,163 US8211735B2 (en) | 2009-06-08 | 2009-06-08 | Nano/microwire solar cell fabricated by nano/microsphere lithography |
US12/480,163 | 2009-06-08 | ||
PCT/US2010/036920 WO2010144274A1 (en) | 2009-06-08 | 2010-06-01 | Nano/microwire solar cell fabricated by nano/microsphere lithography |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201410168382.9A Division CN103996739B (zh) | 2009-06-08 | 2010-06-01 | 用纳米/微球光刻制造纳米/微线太阳能电池 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102414788A CN102414788A (zh) | 2012-04-11 |
CN102414788B true CN102414788B (zh) | 2016-02-24 |
Family
ID=42667323
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201080018567.1A Expired - Fee Related CN102414788B (zh) | 2009-06-08 | 2010-06-01 | 用纳米/微球光刻制造纳米/微线太阳能电池 |
CN201410168382.9A Expired - Fee Related CN103996739B (zh) | 2009-06-08 | 2010-06-01 | 用纳米/微球光刻制造纳米/微线太阳能电池 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201410168382.9A Expired - Fee Related CN103996739B (zh) | 2009-06-08 | 2010-06-01 | 用纳米/微球光刻制造纳米/微线太阳能电池 |
Country Status (5)
Country | Link |
---|---|
US (2) | US8211735B2 (zh) |
JP (1) | JP5669830B2 (zh) |
CN (2) | CN102414788B (zh) |
TW (1) | TW201117401A (zh) |
WO (1) | WO2010144274A1 (zh) |
Families Citing this family (78)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8299472B2 (en) | 2009-12-08 | 2012-10-30 | Young-June Yu | Active pixel sensor with nanowire structured photodetectors |
US9343490B2 (en) | 2013-08-09 | 2016-05-17 | Zena Technologies, Inc. | Nanowire structured color filter arrays and fabrication method of the same |
US8269985B2 (en) | 2009-05-26 | 2012-09-18 | Zena Technologies, Inc. | Determination of optimal diameters for nanowires |
US8791470B2 (en) | 2009-10-05 | 2014-07-29 | Zena Technologies, Inc. | Nano structured LEDs |
US8866065B2 (en) | 2010-12-13 | 2014-10-21 | Zena Technologies, Inc. | Nanowire arrays comprising fluorescent nanowires |
US8835831B2 (en) | 2010-06-22 | 2014-09-16 | Zena Technologies, Inc. | Polarized light detecting device and fabrication methods of the same |
US8519379B2 (en) | 2009-12-08 | 2013-08-27 | Zena Technologies, Inc. | Nanowire structured photodiode with a surrounding epitaxially grown P or N layer |
US8229255B2 (en) | 2008-09-04 | 2012-07-24 | Zena Technologies, Inc. | Optical waveguides in image sensors |
US9000353B2 (en) | 2010-06-22 | 2015-04-07 | President And Fellows Of Harvard College | Light absorption and filtering properties of vertically oriented semiconductor nano wires |
US8735797B2 (en) | 2009-12-08 | 2014-05-27 | Zena Technologies, Inc. | Nanowire photo-detector grown on a back-side illuminated image sensor |
US9082673B2 (en) | 2009-10-05 | 2015-07-14 | Zena Technologies, Inc. | Passivated upstanding nanostructures and methods of making the same |
US9406709B2 (en) | 2010-06-22 | 2016-08-02 | President And Fellows Of Harvard College | Methods for fabricating and using nanowires |
US8889455B2 (en) | 2009-12-08 | 2014-11-18 | Zena Technologies, Inc. | Manufacturing nanowire photo-detector grown on a back-side illuminated image sensor |
US9299866B2 (en) * | 2010-12-30 | 2016-03-29 | Zena Technologies, Inc. | Nanowire array based solar energy harvesting device |
US8546742B2 (en) | 2009-06-04 | 2013-10-01 | Zena Technologies, Inc. | Array of nanowires in a single cavity with anti-reflective coating on substrate |
US9478685B2 (en) * | 2014-06-23 | 2016-10-25 | Zena Technologies, Inc. | Vertical pillar structured infrared detector and fabrication method for the same |
US8274039B2 (en) | 2008-11-13 | 2012-09-25 | Zena Technologies, Inc. | Vertical waveguides with various functionality on integrated circuits |
US8890271B2 (en) | 2010-06-30 | 2014-11-18 | Zena Technologies, Inc. | Silicon nitride light pipes for image sensors |
US8748799B2 (en) | 2010-12-14 | 2014-06-10 | Zena Technologies, Inc. | Full color single pixel including doublet or quadruplet si nanowires for image sensors |
US9515218B2 (en) | 2008-09-04 | 2016-12-06 | Zena Technologies, Inc. | Vertical pillar structured photovoltaic devices with mirrors and optical claddings |
US8476013B2 (en) * | 2008-09-16 | 2013-07-02 | Sequenom, Inc. | Processes and compositions for methylation-based acid enrichment of fetal nucleic acid from a maternal sample useful for non-invasive prenatal diagnoses |
US8933526B2 (en) * | 2009-07-15 | 2015-01-13 | First Solar, Inc. | Nanostructured functional coatings and devices |
KR101103264B1 (ko) * | 2009-07-29 | 2012-01-11 | 한국기계연구원 | 기능성 표면의 제조방법 |
WO2012034078A1 (en) * | 2010-09-10 | 2012-03-15 | Shih-Ping Wang | Photovoltaic nanowire structures and related fabrication methods |
JP2011135058A (ja) * | 2009-11-30 | 2011-07-07 | Honda Motor Co Ltd | 太陽電池素子、カラーセンサ、ならびに発光素子及び受光素子の製造方法 |
WO2011156042A2 (en) * | 2010-03-23 | 2011-12-15 | California Institute Of Technology | Heterojunction wire array solar cells |
CN102259832A (zh) * | 2010-05-27 | 2011-11-30 | 清华大学 | 三维纳米结构阵列的制备方法 |
CA2816909A1 (en) * | 2010-11-15 | 2012-05-24 | The Government Of The United State Of America, As Represented By The Sec Retary Of The Navy | Perforated contact electrode on vertical nanowire array |
CN102097518B (zh) * | 2010-12-15 | 2012-12-19 | 清华大学 | 太阳能电池及其制备方法 |
WO2012088481A2 (en) * | 2010-12-22 | 2012-06-28 | California Institute Of Technology | Heterojunction microwire array semiconductor devices |
JP5920758B2 (ja) * | 2011-03-02 | 2016-05-18 | 本田技研工業株式会社 | ナノワイヤ太陽電池 |
FR2972852B1 (fr) * | 2011-03-17 | 2013-04-12 | Commissariat Energie Atomique | Dispositif a base de nano/microfils stabilise mecaniquement et aux proprietes optiques ameliorees et son procede de realisation |
US20120255599A1 (en) * | 2011-04-05 | 2012-10-11 | Ut-Battelle, Llc | Nanocone-based photovoltaic solar cells |
WO2013003828A2 (en) * | 2011-06-30 | 2013-01-03 | California Institute Of Technology | A tandem solar cell using a silicon microwire array and amorphous silicon photovoltaic layer |
US8759139B2 (en) * | 2011-08-18 | 2014-06-24 | International Business Machines Corporation | Buried selective emitter formation for photovoltaic devices utilizing metal nanoparticle catalyzed etching |
KR101316375B1 (ko) * | 2011-08-19 | 2013-10-08 | 포항공과대학교 산학협력단 | 태양전지 및 이의 제조방법 |
TWI465388B (zh) * | 2012-03-15 | 2014-12-21 | Univ Nat Taiwan | 奈米粗化陣列結構之製造方法 |
CN103367477A (zh) * | 2012-03-30 | 2013-10-23 | 清华大学 | 太阳能电池 |
WO2013152132A1 (en) | 2012-04-03 | 2013-10-10 | The California Institute Of Technology | Semiconductor structures for fuel generation |
CN102832348B (zh) * | 2012-08-28 | 2015-07-29 | 浙江大学 | 一种图形化电极、制备方法和有机太阳能电池 |
KR101385669B1 (ko) * | 2012-10-25 | 2014-04-17 | 한국생산기술연구원 | 실리콘 기판의 나노 및 마이크로 복합 구조체를 갖는 태양 전지의 제조 방법 및 이에 따른 태양 전지 |
KR101480924B1 (ko) * | 2012-11-06 | 2015-01-15 | 한국생산기술연구원 | Mombe를 이용한 태양 전지의 제조 방법 및 이에 따른 태양 전지 |
CN102923645B (zh) * | 2012-11-27 | 2015-06-24 | 北京大学 | 一种高密度纳米电极阵列及其制备方法 |
CN103059610B (zh) * | 2012-12-05 | 2016-04-20 | 湘能华磊光电股份有限公司 | 掩膜剂及带有纳米级图形的衬底的制备方法 |
US11637216B2 (en) * | 2013-03-12 | 2023-04-25 | The Regents Of The University Of California | Highly efficient optical to electrical conversion devices and MElHODS |
KR102279914B1 (ko) * | 2013-03-12 | 2021-07-22 | 더 리젠츠 오브 더 유니버시티 오브 캘리포니아 | 매우 효율적인 광-전기 변환 디바이스들 |
WO2016081476A1 (en) | 2014-11-18 | 2016-05-26 | Shih-Yuan Wang | Microstructure enhanced absorption photosensitive devices |
US10446700B2 (en) | 2013-05-22 | 2019-10-15 | W&Wsens Devices, Inc. | Microstructure enhanced absorption photosensitive devices |
US10700225B2 (en) | 2013-05-22 | 2020-06-30 | W&Wsens Devices, Inc. | Microstructure enhanced absorption photosensitive devices |
US10468543B2 (en) | 2013-05-22 | 2019-11-05 | W&Wsens Devices, Inc. | Microstructure enhanced absorption photosensitive devices |
WO2014190189A2 (en) | 2013-05-22 | 2014-11-27 | Shih-Yuan Wang | Microstructure enhanced absorption photosensitive devices |
US11121271B2 (en) | 2013-05-22 | 2021-09-14 | W&WSens, Devices, Inc. | Microstructure enhanced absorption photosensitive devices |
WO2014199462A1 (ja) * | 2013-06-12 | 2014-12-18 | 株式会社日立製作所 | 太陽電池セルおよびその製造方法 |
CN103346214B (zh) * | 2013-07-03 | 2016-04-06 | 上海交通大学 | 一种硅基径向同质异质结太阳电池及其制备方法 |
KR20150014058A (ko) * | 2013-07-29 | 2015-02-06 | 한국생산기술연구원 | 태양전지용 실리콘 기판 및 이의 제조방법 |
CN103441189A (zh) * | 2013-09-03 | 2013-12-11 | 中国科学院大学 | 一种在硅纳米线上制备径向p-n结太阳电池的方法 |
US9651735B2 (en) | 2013-09-11 | 2017-05-16 | Snaptrack, Inc. | Optical fiber array for achieving constant color off-axis viewing |
US20150251917A1 (en) * | 2013-10-21 | 2015-09-10 | Qualcomm Mems Technologies, Inc. | Method of patterning pillars |
US9529126B2 (en) * | 2014-01-09 | 2016-12-27 | Wisconsin Alumni Research Foundation | Fresnel zone plate |
US9224736B1 (en) * | 2014-06-27 | 2015-12-29 | Taiwan Semicondcutor Manufacturing Company, Ltd. | Structure and method for SRAM FinFET device |
US9859394B2 (en) | 2014-12-18 | 2018-01-02 | Agilome, Inc. | Graphene FET devices, systems, and methods of using the same for sequencing nucleic acids |
US9618474B2 (en) | 2014-12-18 | 2017-04-11 | Edico Genome, Inc. | Graphene FET devices, systems, and methods of using the same for sequencing nucleic acids |
US9857328B2 (en) | 2014-12-18 | 2018-01-02 | Agilome, Inc. | Chemically-sensitive field effect transistors, systems and methods for manufacturing and using the same |
WO2016100049A1 (en) | 2014-12-18 | 2016-06-23 | Edico Genome Corporation | Chemically-sensitive field effect transistor |
US10006910B2 (en) | 2014-12-18 | 2018-06-26 | Agilome, Inc. | Chemically-sensitive field effect transistors, systems, and methods for manufacturing and using the same |
US10020300B2 (en) | 2014-12-18 | 2018-07-10 | Agilome, Inc. | Graphene FET devices, systems, and methods of using the same for sequencing nucleic acids |
CN104555910B (zh) * | 2014-12-31 | 2016-05-18 | 吉林大学 | 一种基于反应离子束刻蚀技术制备薄膜有序微结构的方法 |
US11056517B2 (en) * | 2015-03-10 | 2021-07-06 | The Regents Of The University Of California | Monolithic thin film elements and performance electronics, solar powered systems and fabrication |
TW201712881A (zh) * | 2015-05-14 | 2017-04-01 | 立那工業股份有限公司 | 具有超過80%填充因數的高效si微線太陽能電池的金屬微網格電極 |
US9748412B2 (en) * | 2015-06-01 | 2017-08-29 | International Business Machines Corporation | Highly responsive III-V photodetectors using ZnO:Al as N-type emitter |
FR3037341A1 (fr) * | 2015-06-10 | 2016-12-16 | Centre Nat Rech Scient | Procede de fabrication d'au moins un type de nanostructures et structures comprenant une pluralite de telles nanostructures |
KR101669947B1 (ko) | 2015-10-15 | 2016-10-27 | 한국생산기술연구원 | 저가형 패터닝 공정을 이용한 마이크로 구조를 갖는 태양 전지의 제조 방법 및 이에 따른 태양 전지 |
US10008564B2 (en) * | 2015-11-03 | 2018-06-26 | Tokyo Electron Limited | Method of corner rounding and trimming of nanowires by microwave plasma |
EP3459115A4 (en) | 2016-05-16 | 2020-04-08 | Agilome, Inc. | GRAPHEN-FET DEVICES, SYSTEMS AND METHODS FOR USE THEREOF FOR SEQUENCING NUCLEIC ACIDS |
KR101830536B1 (ko) * | 2016-10-21 | 2018-02-20 | 한국생산기술연구원 | 미세 구조가 형성된 pdms 스탬프 롤을 이용한 마이크로 구조를 갖는 태양 전지의 제조 방법 및 이에 따른 태양 전지 |
CN106684175B (zh) * | 2017-02-15 | 2019-02-19 | 中国科学院合肥物质科学研究院 | 具有色彩调变的太阳能电池及其制备方法 |
CN108394857A (zh) * | 2018-02-02 | 2018-08-14 | 上海理工大学 | 一种核壳GaN纳米线阵列的制备方法 |
CN111474161A (zh) * | 2019-01-23 | 2020-07-31 | 曾繁根 | 光学基板及其制备方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7335395B2 (en) * | 2002-04-23 | 2008-02-26 | Nantero, Inc. | Methods of using pre-formed nanotubes to make carbon nanotube films, layers, fabrics, ribbons, elements and articles |
CN101136444A (zh) * | 2006-08-25 | 2008-03-05 | 通用电气公司 | 薄膜硅太阳能电池中的纳米线 |
CN101183689A (zh) * | 2006-11-15 | 2008-05-21 | 通用电气公司 | 分级混合式非晶硅纳米线太阳能电池 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2639841C3 (de) | 1976-09-03 | 1980-10-23 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Solarzelle und Verfahren zu ihrer Herstellung |
US5322805A (en) * | 1992-10-16 | 1994-06-21 | Ncr Corporation | Method for forming a bipolar emitter using doped SOG |
JP2002305311A (ja) * | 2001-01-31 | 2002-10-18 | Shin Etsu Handotai Co Ltd | 太陽電池の製造方法および太陽電池 |
JP4072197B2 (ja) * | 2001-05-21 | 2008-04-09 | 邦仁 河本 | フォトニック結晶及びその製造方法 |
US7432522B2 (en) | 2003-04-04 | 2008-10-07 | Qunano Ab | Nanowhiskers with pn junctions, doped nanowhiskers, and methods for preparing them |
US7265037B2 (en) * | 2003-06-20 | 2007-09-04 | The Regents Of The University Of California | Nanowire array and nanowire solar cells and methods for forming the same |
US20060207647A1 (en) * | 2005-03-16 | 2006-09-21 | General Electric Company | High efficiency inorganic nanorod-enhanced photovoltaic devices |
US20100193768A1 (en) * | 2005-06-20 | 2010-08-05 | Illuminex Corporation | Semiconducting nanowire arrays for photovoltaic applications |
CN106409970A (zh) * | 2005-12-21 | 2017-02-15 | 太阳能公司 | 背面触点太阳能电池及制造方法 |
JP4726633B2 (ja) * | 2006-01-11 | 2011-07-20 | シャープ株式会社 | 発光素子の製造方法 |
CN101536187A (zh) | 2006-10-05 | 2009-09-16 | 日立化成工业株式会社 | 有序排列、大长宽比、高密度的硅纳米线及其制造方法 |
US8049203B2 (en) * | 2006-12-22 | 2011-11-01 | Qunano Ab | Nanoelectronic structure and method of producing such |
CN101803035B (zh) | 2007-06-19 | 2016-08-24 | 昆南诺股份有限公司 | 基于纳米线的太阳能电池结构 |
-
2009
- 2009-06-08 US US12/480,163 patent/US8211735B2/en not_active Expired - Fee Related
-
2010
- 2010-06-01 WO PCT/US2010/036920 patent/WO2010144274A1/en active Application Filing
- 2010-06-01 CN CN201080018567.1A patent/CN102414788B/zh not_active Expired - Fee Related
- 2010-06-01 TW TW099117557A patent/TW201117401A/zh unknown
- 2010-06-01 CN CN201410168382.9A patent/CN103996739B/zh not_active Expired - Fee Related
- 2010-06-01 JP JP2012514046A patent/JP5669830B2/ja not_active Expired - Fee Related
-
2012
- 2012-04-12 US US13/445,101 patent/US8753912B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7335395B2 (en) * | 2002-04-23 | 2008-02-26 | Nantero, Inc. | Methods of using pre-formed nanotubes to make carbon nanotube films, layers, fabrics, ribbons, elements and articles |
CN101136444A (zh) * | 2006-08-25 | 2008-03-05 | 通用电气公司 | 薄膜硅太阳能电池中的纳米线 |
CN101183689A (zh) * | 2006-11-15 | 2008-05-21 | 通用电气公司 | 分级混合式非晶硅纳米线太阳能电池 |
Non-Patent Citations (1)
Title |
---|
Fabrication of nanopillars by nanosphere lithography;Chin Li Cheng et al.;《Nanotechnology》;20060210;第17卷(第5期);摘要、第1339页第2栏倒数第1段至第1340页第2栏倒数第1段及图1 * |
Also Published As
Publication number | Publication date |
---|---|
US8753912B2 (en) | 2014-06-17 |
CN103996739A (zh) | 2014-08-20 |
JP2012529756A (ja) | 2012-11-22 |
CN102414788A (zh) | 2012-04-11 |
US8211735B2 (en) | 2012-07-03 |
CN103996739B (zh) | 2017-04-12 |
US20120196401A1 (en) | 2012-08-02 |
JP5669830B2 (ja) | 2015-02-18 |
TW201117401A (en) | 2011-05-16 |
US20100221866A1 (en) | 2010-09-02 |
WO2010144274A1 (en) | 2010-12-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN102414788B (zh) | 用纳米/微球光刻制造纳米/微线太阳能电池 | |
US20220223750A1 (en) | Nanostructured devices | |
TWI381536B (zh) | 微奈米結構pn二極體陣列薄膜太陽能電池及其製作方法 | |
US9040428B2 (en) | Formation of metal nanospheres and microspheres | |
US9202954B2 (en) | Nanostructure and photovoltaic cell implementing same | |
CN103563090B (zh) | 用于高效太阳能电池的均匀分布的自组装锥形柱 | |
JP5324222B2 (ja) | ナノ構造およびそれを実施する光起電力セル | |
Yan et al. | Si microwire array photoelectrochemical cells: Stabilized and improved performances with surface modification of Pt nanoparticles and TiO2 ultrathin film | |
Li et al. | Fabrication and characteristics of NIP structure amorphous silicon solar cells with CdS quantum dots on nanopillar array | |
Thiyagu et al. | Silicon nanowire-based solar cells | |
TWI442588B (zh) | 太陽能電池及其製備方法 | |
Dieng et al. | Morphological and Optoelectrical Characterization of Silicon Nanostructures for Photovoltaic Applications | |
Özdemir | Fabrication of silicon nanowires by electroless etching and investigation of their photovoltaic applications |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20171113 Address after: Grand Cayman, Cayman Islands Patentee after: GLOBALFOUNDRIES INC. Address before: American New York Patentee before: Core USA second LLC Effective date of registration: 20171113 Address after: American New York Patentee after: Core USA second LLC Address before: American New York Patentee before: International Business Machines Corp. |
|
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160224 Termination date: 20190601 |