CN102412798B - Radio frequency modulation output circuit and gain compensation amplifier thereof - Google Patents
Radio frequency modulation output circuit and gain compensation amplifier thereof Download PDFInfo
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- CN102412798B CN102412798B CN2011104090179A CN201110409017A CN102412798B CN 102412798 B CN102412798 B CN 102412798B CN 2011104090179 A CN2011104090179 A CN 2011104090179A CN 201110409017 A CN201110409017 A CN 201110409017A CN 102412798 B CN102412798 B CN 102412798B
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Abstract
The invention provides a radio frequency modulation output circuit, comprising: a first frequency mixer, a first amplifying circuit, a second frequency mixer, a second amplifying circuit and an output circuit, wherein the first frequency mixer is used for receiving a first input signal and a first carrier signal, and generating a first radio frequency modulation signal after frequency mixing of the signals; the first amplifying circuit is connected with the first frequency mixer, and is used for generating a first amplifying signal after amplifying the first radio frequency modulation signal; the second frequency mixer is used for receiving a second input signal and a second carrier signal, and generating a second radio frequency modulation signal after frequency mixing of the signals; the second amplifying circuit is connected with the second frequency mixer, and is used for generating a second amplifying signal after amplifying the second radio frequency modulation signal; and the output circuit is connected with the first amplifying circuit and the second amplifying circuit, and is used for adding the first amplifying signal and the second amplifying signal together and outputting the signal after addition. By using the radio frequency modulation output circuit provided by the invention, the isolation and linearity of the circuit can be improved, thereby stable gain within the whole wide band range can be ensured.
Description
Technical field
The present invention relates to a kind of rf modulations output circuit and gain compensation amplifier thereof.
Background technology
Much communication and instrument system, for example video transmitter, super wideband wireless system or other similar application systems all are operated in broad frequency range, described broadband refer to frequency centered by the coupling frequency band 50% or larger.In the radio-frequency system of working in broad frequency range, circuit at different levels are due to the existence of various parasitic capacitances and inductance, and along with the increase of frequency, the performance of system can be affected.Therefore need in system, increase some high bandwidths cheaply circuit carry out the performance of improvement system in whole broadband range.
Fig. 1 shows a kind of structured flowchart that is operated in the TV RF modulating system in broad frequency range in prior art, whole system comprises: the treatment circuit 11 of video input signals Video In, the sub-carrier modulation circuit 12 of audio input signal AudioIn, carrier signal produce circuit 16 and rf modulations output circuit 17, wherein treatment circuit 11 mainly carries out the clamper processing to video input signals Video In, produces the first input signal Si gnal1; Sub-carrier modulation circuit 12 mainly carries out sub-carrier modulation to audio input signal Audio In, produces the second input signal Si gnal 2; Carrier signal produces circuit 16 mainly for generation of carrier signal LO Signal.
Rf modulations output circuit 17 specifically comprises the first frequency mixer (also referred to as radio frequency amplitude-modulating modulation circuit) the 13, second frequency mixer 14 and output buffer 15.Wherein, the first input signal Si gnal 1 is modulated to the first rf modulated signal Modulated Signal 1 by carrier signal LOSignal by the first frequency mixer 13; The second input signal Si gnal 2 is modulated to the second rf modulated signal Modulated Signal 2 by carrier signal LO Signal by the second frequency mixer 14.After the first rf modulated signal Modulated Signal 1 and the second rf modulated signal Modulated Signal 2 additions, output radiofrequency signal RFOutput after output buffer 15 Hyblid Buffer Amplifiers.
Yet, poor at the isolation of the rf modulations output circuit 17 of said system, can produce and crosstalk between the first rf modulated signal Modulated Signal 1 and the second rf modulated signal Modulated Signal 2, make the system linearity degree be affected.And high performance rf tv reflector requires system to have the higher linearity in whole radio-frequency region, for the difference frequency that reduces audio signal and vision signal disturbs, should there is good intermodulation performance.Wherein, the linearity is to weigh an important parameter of radio circuit performance, and it has explained the distortion level that radio circuit is introduced due to nonlinear distortion.
In addition, due to the existence of various parasitic capacitances and inductance in circuit at different levels, along with the increase gain decline gradually of frequency, can cause the roll off of gain of system in whole broadband range, the performance of system can be affected.And high performance rf tv reflector requires this system gain stabilization in whole rf broadband scope, in existing TV RF modulating system, some TV RF modulating system back production in Mixer Circuit Design and Nonlinear Analysis inductor peaking structures, reduce the gain decline that the frequency increase causes, but increased the cost of system.
In addition, the RF broadband amplifier that is generally used for the output Hyblid Buffer Amplifier in prior art adopts the multiple-series amplifier or increases the bandwidth method zero point, such as shunt-compensated amplifier and resistance capacitance (RC) negative feedback common-source amplifier etc. is realized.Although the foregoing circuit structure can increase the working band of circuit, still can't meet low cost, the high linearity of high-performance radio-frequency television transmitter, the requirement of high-isolation.
Summary of the invention
The technical problem to be solved in the present invention is to provide a kind of rf modulations output circuit and gain compensation amplifier thereof, to improve isolation and the linearity, and then can in whole broad frequency range, all have stable gain.
For solving the problems of the technologies described above, the invention provides a kind of rf modulations output circuit, comprising:
The first frequency mixer, receive the first input signal and first carrier signal and it carried out producing the first rf modulated signal after mixing;
The first amplifying circuit, be connected with described the first frequency mixer, and described the first rf modulated signal is amplified to rear generation the first amplifying signal;
The second frequency mixer, receive the second input signal and the second carrier signal and it carried out producing the second rf modulated signal after mixing;
The second amplifying circuit, be connected with described the second frequency mixer, and described the second rf modulated signal is amplified to rear generation the second amplifying signal;
Output circuit, be connected with the second amplifying circuit with described the first amplifying circuit, will after described the first amplifying signal and the second amplifying signal addition, export.
Alternatively, described the first amplifying circuit and the second amplifying circuit are the gain compensation amplifier, and its gain increases with the increase of frequency.
Alternatively, described gain compensation amplifier comprises:
First order circuit, described first order circuit comprises source follower, the signal of inputting is carried out to source electrode and follow, strengthen driving force and isolation;
Second level amplifier, be coupled with described first order circuit, and described second level amplifier comprises the differential amplifier with source negative feedback, and its gain increases with the increase of frequency;
Third level amplifier, be coupled with described second level amplifier, and described third level amplifier comprises the differential amplifier with source negative feedback, and the power of output signal is adjusted in default power bracket.
Alternatively, described the first input signal, the first rf modulated signal, the second rf modulated signal, the first amplifying signal and the second amplifying signal are differential signal, and described the second input signal is double-end signal, and described first order circuit comprises:
The first MOS transistor, its grid receives input signal Zhong De mono-road signal, and its drain electrode connects positive source, and its source electrode connects the first mirror current source;
The second MOS transistor, its grid receives another road signal in input signal, and its drain electrode connects positive source, and its source electrode connects the second mirror current source.
Alternatively, described second level amplifier comprises:
The 3rd MOS transistor, its grid connects the source electrode of described the first MOS transistor, and its drain electrode is connected to described positive source by the first resistance, and its source electrode connects the 3rd mirror current source;
The 4th MOS transistor, its grid connects the source electrode of described the second MOS transistor, its drain electrode is connected to described positive source by the second resistance, and its source electrode connects the 4th mirror current source, and the output current of described the 4th mirror current source is identical with the output current of described the 3rd mirror current source;
The first feedback resistance, its first end is connected to the source electrode of described the 3rd MOS transistor, and its second end is connected to the source electrode of described the 4th MOS transistor;
The first feedback capacity, its first end is connected to the source electrode of described the 3rd MOS transistor, and its second end is connected to the source electrode of described the 4th MOS transistor.
Alternatively, described third level amplifier comprises:
The 5th MOS transistor, its grid connects the drain electrode of described the 3rd MOS transistor, and its source electrode connects the 5th mirror current source;
The 6th MOS transistor, its grid connects the drain electrode of described the 4th MOS transistor, and its source electrode connects the 6th mirror current source, and the output current of described the 6th mirror current source is identical with the output current of described the 5th mirror current source;
The second feedback resistance, its first end connects the source electrode of described the 5th MOS transistor, and its second end connects the source electrode of described the 6th MOS transistor.
Alternatively, described output circuit comprises:
The first output resistance, its first end connects positive source, and its second end connects the negative sense output of described the first amplifying circuit and the forward output of described the second amplifying circuit;
The second output resistance, its first end connects described positive source, and its second end connects the forward output of described the first amplifying circuit and the negative sense output of described the second amplifying circuit.
Alternatively, described rf modulations output circuit also comprises:
The first carrier buffer circuit, described first carrier signal inputs to described the first frequency mixer after described first carrier buffer circuit Hyblid Buffer Amplifier;
The second carrier wave buffer circuit, described the second carrier signal inputs to described the second frequency mixer after described the second carrier wave buffer circuit Hyblid Buffer Amplifier.
Alternatively, described the first frequency mixer and the second frequency mixer comprise respectively:
The mutual conductance input stage, be converted into current signal by the first input signal or the second input signal that receive;
The reversing switch module, be connected with described mutual conductance input stage, under the control of described first carrier signal or the second carrier signal, described current signal carried out to periodic reverse, produces described the first rf modulated signal or the second rf modulated signal.
Alternatively, described the first input signal, the first rf modulated signal, the second rf modulated signal are differential signal, and described the second input signal is double-end signal,
Described mutual conductance input stage comprises:
The 7th MOS transistor, its grid receives input signal Zhong De mono-road signal, and its source electrode is connected with the 7th mirror current source;
The 8th MOS transistor, its grid receives default reference voltage, and its source electrode is connected with the drain electrode of described the 7th MOS transistor;
The 9th MOS transistor, its grid receives another road signal in input signal, and its source electrode is connected with the 8th mirror current source;
The tenth MOS transistor, its grid receives described reference voltage, and its source electrode is connected with the drain electrode of described the 9th MOS transistor;
The 3rd feedback resistance, its first end connects the source electrode of described the 7th MOS transistor, and its second end connects the source electrode of described the 9th MOS transistor;
Described reversing switch module comprises:
The 11 MOS transistor, the forward signal of its grid reception carrier signal, its source electrode connects the drain electrode of described the 8th MOS transistor, and its drain electrode is connected to positive source by resistance;
The 12 MOS transistor, the negative-going signal of its grid reception carrier signal, its source electrode connects the drain electrode of described the 8th MOS transistor, and its drain electrode is connected to positive source by resistance;
The 13 MOS transistor, the negative-going signal of its grid reception carrier signal, its source electrode connects the drain electrode of described the tenth MOS transistor, and its drain electrode connects the drain electrode of described the 11 MOS transistor;
The 14 MOS transistor, the forward signal of its grid reception carrier signal, its source electrode connects the drain electrode of described the tenth MOS transistor, and its drain electrode connects the drain electrode of described the 12 MOS transistor;
Wherein, the drain electrode of described the 11 MOS transistor, the 12 MOS transistor, the 13 MOS transistor and the 14 MOS transistor is output.
Alternatively, described the first input signal is vision signal, and described the second input signal is audio signal.
The present invention also provides a kind of gain compensation amplifier, comprising:
First order circuit, described first order circuit comprises source follower, input signal is carried out to source electrode and follow, strengthen driving force and isolate rear the generation and follow signal;
Second level amplifier, with described first order circuit, be coupled, described second level amplifier comprises the differential amplifier with source negative feedback, and the described signal of following is amplified to rear generation second level amplifying signal, and its gain increases with described increase of following the frequency of signal;
Third level amplifier, be coupled with described second level amplifier, and described third level amplifier comprises the differential amplifier with source negative feedback, produces third level amplifying signal after being adjusted in default power bracket to the power of described second level amplifying signal.
Alternatively, described input signal is differential signal, and described first order circuit comprises:
The first MOS transistor, its grid receives the forward signal of described input signal, and its drain electrode connects positive source, and its source electrode connects the first mirror current source;
The second MOS transistor, its grid receives the negative-going signal of described input signal, and its drain electrode connects positive source, and its source electrode connects the second mirror current source.
Alternatively, described second level amplifier comprises:
The 3rd MOS transistor, its grid connects the source electrode of described the first MOS transistor, and its drain electrode is connected to described positive source by the first resistance, and its source electrode connects the 3rd mirror current source;
The 4th MOS transistor, its grid connects the source electrode of described the second MOS transistor, its drain electrode is connected to described positive source by the second resistance, and its source electrode connects the 4th mirror current source, and the output current of described the 4th mirror current source is identical with the output current of described the 3rd mirror current source;
The first feedback resistance, its first end is connected to the source electrode of described the 3rd MOS transistor, and its second end is connected to the source electrode of described the 4th MOS transistor;
The first feedback capacity, its first end is connected to the source electrode of described the 3rd MOS transistor, and its second end is connected to the source electrode of described the 4th MOS transistor.
Alternatively, described third level amplifier comprises:
The 5th MOS transistor, its grid connects the drain electrode of described the 3rd MOS transistor, and its source electrode connects the 5th mirror current source;
The 6th MOS transistor, its grid connects the drain electrode of described the 4th MOS transistor, and its source electrode connects the 6th mirror current source, and the output current of described the 6th mirror current source is identical with the output current of described the 5th mirror current source;
The second feedback resistance, its first end connects the source electrode of described the 5th MOS transistor, and its second end connects the source electrode of described the 6th MOS transistor.
Compared with prior art, the present invention has the following advantages:
In the rf modulations output circuit of the embodiment of the present invention, the first rf modulated signal that adopts the first amplifying circuit to produce the first frequency mixer is amplified, the second rf modulated signal that adopts the second amplifying circuit to produce the second frequency mixer is amplified, two paths of signals addition after amplifying again afterwards, because mixing and the amplifying circuit of two paths of signals is separate, thereby increased the isolation of two paths of signals, be conducive to prevent signal cross-talk, make two paths of signals there is good intermodulation performance, strengthened the linearity of rf modulations output circuit.
Further, in the rf modulations output circuit of the embodiment of the present invention, the first amplifying circuit and the second amplifying circuit are the gain compensation amplifier, its gain increases with the increase of frequency, be conducive to compensate the gain decline that front stage circuits causes because frequency increases, thereby all there is stable gain in whole broad frequency range.
The accompanying drawing explanation
Fig. 1 is the electrical block diagram of a kind of TV RF modulating system of prior art;
Fig. 2 is the structured flowchart of the rf modulations output circuit of the embodiment of the present invention;
Fig. 3 is the detailed circuit diagram of the frequency mixer in the rf modulations output circuit of the embodiment of the present invention;
Fig. 4 is the structured flowchart of the gain compensation amplifier in the rf modulations output circuit of the embodiment of the present invention;
Fig. 5 is the detailed circuit diagram of the gain compensation amplifier in the rf modulations output circuit of the embodiment of the present invention;
Fig. 6 is the amplitude-response curve figure of second level amplifier in Fig. 4.
Embodiment
Rf modulations output circuit of the prior art is generally to amplify output after the addition of two-way mixed frequency signal again, between the two paths of signals after mixed modulated, can produce and crosstalk, and makes the linearity of circuit be affected.In addition, due to the existence of various parasitic capacitances and inductance, along with the increase of frequency, system gain can descend gradually, causes the roll off of gain of system in whole broad frequency range, affects systematic function.
In the rf modulations output circuit of the embodiment of the present invention, the first rf modulated signal that adopts the first amplifying circuit to produce the first frequency mixer is amplified, the second rf modulated signal that adopts the second amplifying circuit to produce the second frequency mixer is amplified, two paths of signals addition after amplifying again afterwards, because mixing and the amplifying circuit of two paths of signals is separate, thereby increased the isolation of two paths of signals, be conducive to prevent signal cross-talk, make two paths of signals there is good intermodulation performance, strengthened the linearity of rf modulations output circuit.
Further, in the rf modulations output circuit of the embodiment of the present invention, the first amplifying circuit and the second amplifying circuit are the gain compensation amplifier, its gain increases with the increase of frequency, be conducive to compensate the gain decline that front stage circuits causes because frequency increases, thereby all there is stable gain in whole broad frequency range.
Below in conjunction with specific embodiments and the drawings, the invention will be further described, but should not limit the scope of the invention with this.
Fig. 2 shows the structured flowchart of the rf modulations output circuit of the present embodiment, mainly comprise: the first frequency mixer 21 receives the first input signal Si gnal 1 and first carrier signal LO1 and it is carried out producing the first rf modulated signal Modulated Signal 1 after mixing; The first amplifying circuit 25, be connected with the first frequency mixer 21, and the first rf modulated signal Modulated Signal 1 is amplified to rear generation the first amplifying signal VOUT1; The second frequency mixer 22, receive the second input signal Si gnal 2 and the second carrier signal LO2 and it carried out producing the second rf modulated signal Modulated Signal 2 after mixing; The second amplifying circuit 26, be connected with the second frequency mixer 22, and the second rf modulated signal Modulated Signal 2 is amplified to rear generation the second amplifying signal VOUT2; Output circuit 28, be connected with the second amplifying circuit 26 with the first amplifying circuit 25, will after the first amplifying signal VOUT1 and the second amplifying signal VOUT2 addition, export, and produces output radiofrequency signal RF Output.
Preferably, rf modulations output circuit at the present embodiment also comprises first carrier buffer circuit 23 and the second carrier wave buffer circuit 24, carrier signal LO Signal by producing first carrier signal LO1 and the second carrier signal LO2 after the Hyblid Buffer Amplifier of first carrier buffer circuit 23 and the second carrier wave buffer circuit 24, inputs to respectively in the first frequency mixer 21 and the second frequency mixer 22 respectively afterwards again.In a specific embodiment, first carrier buffer circuit 23 and the second carrier wave buffer circuit 24 can adopt conventional amplifier circuit to realize.Wherein, first carrier signal LO1 and the second carrier signal LO2 can produce after same carrier signal LO Signal Hyblid Buffer Amplifier, can be also to produce after separate different carrier signal Hyblid Buffer Amplifier.
First carrier buffer circuit 23 and the second carrier wave buffer circuit 24 can be used for eliminating the interactive mode coupling between local oscillation circuit and the first frequency mixer 21 and the second frequency mixer 22, and carrier signal LO Signal are amplified to obtain first carrier signal LO1 and the second carrier signal LO2 of desired signal amplitude.
In the present embodiment, the first input signal Si gnal 1, first carrier signal LO1, the second carrier signal LO2 are differential signals, the second input signal Si gnal 2 is a double-end signal, comprise a fixed level and a single-ended input signal, the first rf modulated signal Modulated Signal 1 and the second rf modulated signal Modulated Signal 2 that mixing produces, and the first amplifying signal VOUT1 and the second amplifying signal VOUT2 that amplify to produce be also differential signal, and the final outwards output radiofrequency signal RF Output of output is single-ended signal.
Wherein, output circuit 28 can comprise two output resistance Rout, and wherein the first end of the first output resistance Rout connects positive source VDD, and the second end connects the negative sense output of the first amplifying circuit 25 and the forward output of the second amplifying circuit 26; The first end of the second output resistance Rout connects positive source VDD, and the second end connects the forward output of the first amplifying circuit 25 and the negative sense output of the second amplifying circuit 26; In two output resistance Rout, the second end of any can be used as output, produces output radiofrequency signal RF Output.
The first frequency mixer 21 is identical with the basic structure of the second frequency mixer 22, as shown in Figure 3, all be based on basic Gilbert structure, adopt the fully differential structure, mainly comprise mutual conductance input stage and reversing switch module, wherein, the first input signal Si gnal 1 or the second input signal Si gnal 2 that the mutual conductance input stage will receive are converted into current signal, the reversing switch module is connected with the mutual conductance input stage, under the control of first carrier signal LO1 or the second carrier signal LO2, current signal is carried out to periodic reverse, produce the first rf modulated signal ModulatedSignal 1 or the second rf modulated signal Modulated Signal 2.
Wherein, the mutual conductance input stage comprises: the 7th MOS transistor M1, and its grid receives input signal Zhong De mono-road signal Input1 (being specially the forward signal of the first input signal for the first input signal), and its source electrode is connected with the 7th mirror current source I1; The 8th MOS transistor MC1, its grid receives default reference voltage VB2, and its source electrode is connected with the drain electrode of the 7th MOS transistor M1; The 9th MOS transistor M2, its grid receives another road signal (being specially the negative-going signal of the first input signal for the first input signal) in input signal, and its source electrode is connected with the 8th mirror current source I2; The tenth MOS transistor MC2, its grid receives reference voltage VB2, and its source electrode is connected with the drain electrode of the 9th MOS transistor M2; The 3rd feedback resistance R, its first end connects the source electrode of the 7th MOS transistor M1, and its second end connects the source electrode of the 9th MOS transistor M2.Default reference voltage VB2 can guarantee that the 8th MOS transistor MC1 and the tenth MOS transistor MC2 are operated in saturation region.
Fig. 3 is reduced graph, it shows MOS transistor MB1 in the 7th mirror current source I1 and the MOS transistor MB2 in the 8th mirror current source I2 simplifiedly, the grid of MOS transistor MB1 and MB2 is connected default bias voltage I Bias1, those skilled in the art are to be understood that, also comprise other the known interlock circuits outside MOS transistor MB1 and MB2 in the 7th mirror current source I1 and the 8th mirror current source I2, also not shown in order to simplify herein.
The reversing switch module specifically comprises: the 11 MOS transistor M3, the forward signal of its grid reception carrier signal (the forward signal LO1+ that is the first carrier signal for the first carrier signal), its source electrode connects the drain electrode of the 8th MOS transistor MC1, and its drain electrode is connected to positive source VDD by resistance R 1; The 12 MOS transistor M4, the negative-going signal of its grid reception carrier signal (the negative-going signal LO1-that is the first carrier signal for the first carrier signal), its source electrode connects the drain electrode of the 8th MOS transistor MC1, and its drain electrode is connected to positive source VDD by resistance R 1; The 13 MOS transistor M5, the negative-going signal of its grid reception carrier signal (the negative-going signal LO1-that is the first carrier signal for the first carrier signal), its source electrode connects the drain electrode of the tenth MOS transistor MC2, and its drain electrode connects the drain electrode of the 11 MOS transistor M3; The 14 MOS transistor M6, the forward signal of its grid reception carrier signal (the forward signal LO1+ that is the first carrier signal for the first carrier signal), its source electrode connects the drain electrode of the tenth MOS transistor MC2, and its drain electrode connects the drain electrode of the 12 MOS transistor M4; Wherein, the drain electrode of the 11 MOS transistor M3, the 12 MOS transistor M4, the 13 MOS transistor M5 and the 14 MOS transistor M5 is output, for the first frequency mixer, output be respectively forward signal Modulated Signal 1+ and the negative-going signal Modulated Signal 1-of the first rf modulated signal Modulated Signal 1.
In the present embodiment, the 7th mirror current source I1 in the first frequency mixer 21 and the output current of the 8th mirror current source I2 equate, realize the ordinary amplitude modulation modulation function; The 7th mirror current source I1 and the 8th mirror current source I2 in the second frequency mixer 22 proportionally get preset value according to design objective, to realize suppressed-carrier double side band amplitude-modulating modulation function.Certainly, in other specific embodiments, also can the actual functional capability demand carry out other configurations to the mirror current source I1 in two frequency mixers and I2.
Simultaneously in conjunction with Fig. 2 and Fig. 3, for the purpose of simplifying the description, it is example that the signal name in Fig. 3 and flowing to be take the first frequency mixer 21.For the first frequency mixer 21, input signal Input1 and Input2 are respectively forward signal and the negative-going signal of the first input signal Si gnal 1.The first input signal Si gnal 1 is converted into current signal by the 7th MOS transistor M1 in the mutual conductance input stage and the 8th MOS transistor M2 and the 3rd feedback resistance R, then through the 11 to the 14 MOS transistor M3 to M6 (as switching tube) controlled by first carrier signal LO1+, LO 1-, current signal is carried out to the periodicity commutation, completing analog signal with the first input signal Si gnal 1 multiplies each other, thereby complete the function of frequency translation, export the first rf modulated signal Modulated Signal 1+, Modulated Signal 1-.Wherein, the 11 grid to the 14 MOS transistor M3 to M6 can also connect another default reference voltage VB by resistance.
Wherein, between first carrier buffer circuit 23 and the first frequency mixer 21, adopt capacitor C 1 to be coupled, carrier signal inputs to the 11 grid to the 14 MOS transistor M3 to M6 by capacitor C 1.In order to reduce the impact of parasitic capacitance, between the first frequency mixer 21 and the first amplifying circuit 25, be direct-coupling.Similarly, between the second carrier wave buffer circuit 24 and the second frequency mixer 22, also adopting capacitive coupling, is also direct-coupling between the second frequency mixer 22 and the second amplifying circuit 26.
More specifically, as the 3rd feedback resistance R during much larger than the mutual conductance of the 7th MOS transistor M1 and the 9th MOS transistor M2, effective mutual conductance of mutual conductance input stage becomes the minorant of mutual conductance, the major part variation of the first input signal Si gnal 1 drops on the 3rd feedback resistance R, the leakage current that is to say the 7th MOS transistor M1 and the 9th MOS transistor M2 is the linear function of the first input signal Si gnal 1, thereby has increased the linearity of circuit.Common grid MOS transistor MC 1, the MC2 of cascade have reduced the Miller capacitance between mutual conductance input pipe and switching tube, have increased the isolation between first carrier signal LO 1+, LO1-and the first input signal Si gnal 1.
For the second frequency mixer 22, its input signal Input1 and Input2 are respectively single-ended signal and the fixed level in the second input signal Si gnal 2, and its fixed level is determined by whole radio system.Structure and the operation principle of the second frequency mixer 22 are similar, just repeat no more here.
The first frequency mixer 21 and the second frequency mixer 22 adopt the ohmic load structure, make the first amplifying circuit of this output resistance and subordinate and the input parasitic capacitance of the second amplifying circuit form low-pass characteristic, cause the gain of two frequency mixers to descend; Due to the existence of the grid parasitic capacitance of the MOS transistor M3 to M6 as switching tube, along with frequency increases, carrier signal LO amplitude descends and the existence of subordinate's input parasitic capacitance, the gain of the first frequency mixer 21 and the second frequency mixer 22 descends again.Due in whole radio frequency operation scope, frequency is high, bandwidth, and highest frequency descends larger than the gain of low-limit frequency.
As a preferred embodiment, in the present embodiment, the first amplifying circuit 25 and the second amplifying circuit 26 are the gain compensation amplifier, its gain increases with the increase of frequency, thereby can realize gain compensation, makes whole circuit all in the working band scope, have more stable gain.Except gain compensation, the gain compensation amplifier of the present embodiment also has the characteristics of high-isolation, high linearity, and its structured flowchart as shown in Figure 4.
With reference to figure 4, the gain compensation amplifier of the present embodiment mainly comprises: first order circuit 41, mainly comprise source follower, and the rf modulated signal Modulated Signal inputted is followed; Second level amplifier 42, be coupled with first order circuit 41, and second level amplifier 42 comprises the differential amplifier with source negative feedback, and its gain increases with the increase of frequency; Third level amplifier 43, be coupled with second level amplifier 42, and third level amplifier 43 comprises the differential amplifier with source negative feedback, and the power of output signal VOUT is adjusted in default power bracket.
Simultaneously in conjunction with Fig. 2 and Fig. 4, for the first amplifying circuit 25, the first rf modulated signal ModulatedSignal 1 is through first order circuit 41, the driving force of intensifier circuit, and the first rf modulated signal Modulated Signal 1 and the second rf modulated signal Modulated Signal 2 are isolated to rear output; This output signal is carried out gain compensation to high-frequency signal in second level amplifier 42, and gains to amplify in third level amplifier 43 and adjust.For the second amplifying circuit 26, the second rf modulated signal Modulated Signal 2 is through first order circuit 41, the driving force of intensifier circuit, and the second rf modulated signal Modulated Signal2 and the first rf modulated signal Modulated Signal 1 are isolated to rear output; This output signal is carried out gain compensation to high-frequency signal in second level amplifier 42, and gains to amplify in third level amplifier 43 and adjust.Last two-way amplifying signal is exported after output circuit 28 additions.
Fig. 5 shows the detailed circuit of the gain compensation amplifier of the present embodiment, between each cascade circuit, adopts direct-coupling, and the bias current of each amplifier is provided by mirror current source Iss and MOS transistor M1.For the ease of the simplified illustration process, the signal name in Fig. 5 and the flow direction are all for the first amplifying circuit, and the concrete structure of the second amplifying circuit is identical with the first amplifying circuit.
Wherein, first order circuit 51 mainly comprises: the first MOS transistor M8, its grid receives input signal Zhong De mono-road signal (for the first amplifying circuit, be specially the forward signal ModulatedSignal 1+ of the first rf modulated signal), its drain electrode connects positive source VDD, and its source electrode connects the first mirror current source; The second MOS transistor M9, another road signal in its grid reception input signal is (for the first amplifying circuit, be specially the negative-going signal Modulated Signal 1-of the first rf modulated signal), its drain electrode connects positive source VDD, and its source electrode connects the second mirror current source.Wherein, the first mirror current source mainly comprises MOS transistor M1 and M2, the source electrode of the first MOS transistor M8 specifically is connected to the drain electrode of MOS transistor M2, and the current ratio of the first mirror current source is 1: k1, and the concrete numerical value of k1 can be adjusted according to the actual set parameter; The second mirror current source mainly comprises MOS transistor M1 and M3, the source electrode of the second MOS transistor M9 specifically is connected to the drain electrode of MOS transistor M3, the current ratio of the second mirror current source is 1: k2, the concrete numerical value of k2 can be adjusted according to the actual set parameter.
In first order circuit 51, utilize grid to receive signal, utilize the source drive load, make source potential can follow grid voltage, show very high input impedance and medium output impedance, make circuit there is stronger driving force.
Second level amplifier 52 mainly comprises: the 3rd transistor M10, and its grid connects the source electrode of the first MOS transistor M8, and its drain electrode is connected to positive source VDD by the first resistance R 1, and its source electrode connects the 3rd mirror current source; The 4th MOS transistor, its grid connects the source electrode of the second MOS transistor M9, and its drain electrode is connected to positive source VDD by the second resistance R 2, and its source electrode connects the 4th mirror current source, wherein, the output current of the 4th mirror current source is identical with the output current of the 3rd mirror current source; The first feedback resistance Rf1, its first end is connected to the source electrode of the 3rd MOS transistor M10, and its second end is connected to the source electrode of the 4th MOS transistor M11; The first feedback capacity C1, its first end is connected to the source electrode of the 3rd MOS transistor M10, and its second end is connected to the source electrode of the 4th MOS transistor M11.
Wherein, the 3rd mirror current source comprises MOS transistor M1 and M4, and the source electrode of the 3rd MOS transistor M10 specifically is connected to the drain electrode of MOS transistor M4; The 4th mirror current source comprises MOS transistor M1 and M5, and the source electrode of the 4th MOS transistor M11 specifically is connected to the drain electrode of MOS transistor M5.The 3rd mirror current source is identical with the current ratio of the 4th mirror current source, is all 1: k3, the concrete numerical value of k3 can be adjusted according to the actual set parameter.
Concrete, as shown in Figure 6, visible second level amplifier 52 has broadband response to effective mutual conductance frequency response curve of second level amplifier 52, at high frequency treatment, increases transistorized effective mutual conductance, the roll off of gain that the compensation output produces.The impedance of the first feedback resistance Rf1 and the first feedback capacity C1 parallel connection in second level amplifier 52
Be low-pass characteristic, wherein R
F1The resistance value that means the first feedback resistance Rf1, C
1The capacitance that means the first feedback capacity C1, s means the S territory.The 3rd MOS transistor M10 in second level amplifier 52 and the mutual conductance of the 4th MOS transistor M11 are denoted as to g
m, effective mutual conductance G of second level amplifier 52
mBe expressed as:
The gain of second level amplifier 52 can be expressed as:
R wherein
1Mean the output impedance of second level amplifier 52, when frequency is less than 1/R
F1C
1The time, this G
mFor resistance characteristic, when Z>>1/g
mThe time,
When frequency is greater than 1/R
F1C
1The time, this impedance Z is capacitive, and along with frequency increases, impedance descends, G
mIncrease CG
2Increase.The gain that can be found out second level amplifier 52 by above formula increases with frequency, and the gain that has compensated front stage circuits descends.
In second level amplifier 52, the first feedback resistance Rf1 and the first feedback capacity C1 parallel with one another have formed source degeneracy circuit, present different resistance values under different frequency, with this, change gain, thereby can realize the compensation of gain.
Third level amplifier 53 mainly comprises: the 5th MOS transistor M12, and its grid connects the drain electrode of the 3rd MOS transistor M10, and its source electrode connects the 5th mirror current source; The 6th MOS transistor M13, its grid connects the drain electrode of the 4th MOS transistor M11, and its source electrode connects the 6th mirror current source, and wherein the output current of the 6th mirror current source is identical with the output current of the 5th mirror current source; The second feedback resistance Rf2, its first end connects the source electrode of the 5th MOS transistor M12, its second end connects the source electrode of the 6th MOS transistor M13, the drain electrode of the 5th MOS transistor M12 is as the output (is the forward signal VOUT11 of the first amplifying signal for the first amplifying circuit output) of forward signal, and the drain electrode of the 6th MOS transistor M13 is as the output (is the negative-going signal VOUT12 of the first amplifying signal for the first amplifying circuit output) of negative-going signal.
Wherein, the 5th mirror current source comprises MOS transistor M1 and M6, and the source electrode of the 5th MOS transistor M12 specifically is connected to the drain electrode of MOS transistor M6; The 6th mirror current source comprises MOS transistor M1 and M7, and the source electrode of the 6th MOS transistor M13 specifically is connected to the drain electrode of MOS transistor M7.The 5th mirror current source is identical with the current ratio of the 6th mirror current source, is all 1: k4, the concrete numerical value of k4 can be adjusted according to the actual set parameter.
Effective mutual conductance G of third level amplifier 53
M3Be expressed as:
Wherein, g
M3Be the mutual conductance of the 5th MOS transistor M12 and the 6th MOS transistor M13, R
F2It is the resistance value of the second feedback resistance Rf2.Work as R
F2>>g
M3The time,
Δ I ≈ 2 Δ V namely
In/ R
F2, wherein Δ I means output leakage current, Δ V
InMean the variation of input signal.This just shows input signal Δ V
InMajor part change by R
F2Determine.That is to say, leakage current is the linear function of input voltage, and is converted into Voltage-output by output resistance, improves the linearity of circuit.
In Fig. 5, the overall gain of gain compensation amplifier is CG=CG
1* CG
2* CG
3, CG
1, CG
2And CG
3Mean respectively the gain of first order circuit 51, second level amplifier 52 and third level amplifier 53.Wherein first order circuit 51 is source follower, designing gain CG
1≈ 1, the gain of second level amplifier 52
The gain of third level amplifier 53
G wherein
mFor effective mutual conductance of second level amplifier 52 inputs, the parallel impedance that Z is the first feedback resistance and the first feedback capacity in second level amplifier 52, g
mFor the mutual conductance of the 3rd MOS transistor M10 and the 4th MOS transistor M11 in second level amplifier 52, R
1Mean the output impedance of second level amplifier 52; g
M3The mutual conductance of the 5th MOS transistor M12 and the 6th MOS transistor M13 in third level amplifier 53, Rout is output impedance (the namely impedance of output resistance Rout in Fig. 2), Z
1It is the impedance of the second feedback resistance Rf2.The compensation of second level amplifier 52 gain that causes of front stage circuits frequency increase descend, third level amplifier 53 is by the power adjustments of output signal to preset range, and the application of resistive degeneration in third level amplifier 53, increased the linearity of circuit.
To sum up, first order circuit 51 comprises source follower, and higher level's circuit is carried out to the signal isolation, prevents the first rf modulated signal Modulated Signal 1 and the second rf modulated signal Modulated Signal 2 signal cross-talks, increases the intermodulation performance of system; And source follower has advantages of the high input impedance low output impedance, increased the driving force to late-class circuit.The differential amplifier that second level amplifier 52 and third level amplifier 53 adopt with source negative feedback, make amplifier have the good linearity; Second level amplifier 52 adopts the feedback system of resistance and Capacitance parallel connection, has compensated the gain decline that front stage circuits causes because frequency increases, and realizes gain compensation.
It should be noted that, in the present embodiment, the first input signal Si gnal 1 is vision signal, the second input signal Si gnal 2 is audio signals, but the rf modulations output circuit of the present embodiment also can be used for other suitable application, the first input signal Si gnal 1 and the second input signal Si gnal 2 can be other suitable signals.In addition, although the circuit module disclosed in the present embodiment has provided concrete circuit connection structure, as the output circuit 28 in Fig. 2, the frequency mixer in Fig. 3 etc., but this not should be understood to limitation of the present invention, those skilled in the art should be understood that relevant circuit module also can adopt other circuit connection structures that can realize same or similar function.
Although the present invention with preferred embodiment openly as above; but it is not for limiting the present invention; any those skilled in the art without departing from the spirit and scope of the present invention; can make possible change and modification, so protection scope of the present invention should be as the criterion with the scope that the claims in the present invention were defined.
Claims (13)
1. a rf modulations output circuit, is characterized in that, comprising:
The first frequency mixer, receive the first input signal and first carrier signal and it carried out producing the first rf modulated signal after mixing;
The first amplifying circuit, be connected with described the first frequency mixer, and described the first rf modulated signal is amplified to rear generation the first amplifying signal;
The second frequency mixer, receive the second input signal and the second carrier signal and it carried out producing the second rf modulated signal after mixing;
The second amplifying circuit, be connected with described the second frequency mixer, and described the second rf modulated signal is amplified to rear generation the second amplifying signal;
Output circuit, be connected with the second amplifying circuit with described the first amplifying circuit, will after described the first amplifying signal and the second amplifying signal addition, export;
Wherein, described the first amplifying circuit and the second amplifying circuit are the gain compensation amplifier, and its gain increases with the increase of frequency, and described gain compensation amplifier comprises:
First order circuit, described first order circuit comprises source follower, the signal of inputting is carried out to source electrode and follow, strengthen driving force and isolation;
Second level amplifier, be coupled with described first order circuit, and described second level amplifier comprises the differential amplifier with source negative feedback, and its gain increases with the increase of frequency;
Third level amplifier, be coupled with described second level amplifier, and described third level amplifier comprises the differential amplifier with source negative feedback, and the power of output signal is adjusted in default power bracket.
2. rf modulations output circuit according to claim 1, it is characterized in that, described the first input signal, the first rf modulated signal, the second rf modulated signal, the first amplifying signal and the second amplifying signal are differential signal, described the second input signal is double-end signal, and described first order circuit comprises:
The first MOS transistor, its grid receives input signal Zhong De mono-road signal, and its drain electrode connects positive source, and its source electrode connects the first mirror current source;
The second MOS transistor, its grid receives another road signal in input signal, and its drain electrode connects positive source, and its source electrode connects the second mirror current source.
3. rf modulations output circuit according to claim 2, is characterized in that, described second level amplifier comprises:
The 3rd MOS transistor, its grid connects the source electrode of described the first MOS transistor, and its drain electrode is connected to described positive source by the first resistance, and its source electrode connects the 3rd mirror current source;
The 4th MOS transistor, its grid connects the source electrode of described the second MOS transistor, its drain electrode is connected to described positive source by the second resistance, and its source electrode connects the 4th mirror current source, and the output current of described the 4th mirror current source is identical with the output current of described the 3rd mirror current source;
The first feedback resistance, its first end is connected to the source electrode of described the 3rd MOS transistor, and its second end is connected to the source electrode of described the 4th MOS transistor;
The first feedback capacity, its first end is connected to the source electrode of described the 3rd MOS transistor, and its second end is connected to the source electrode of described the 4th MOS transistor.
4. rf modulations output circuit according to claim 3, is characterized in that, described third level amplifier comprises:
The 5th MOS transistor, its grid connects the drain electrode of described the 3rd MOS transistor, and its source electrode connects the 5th mirror current source;
The 6th MOS transistor, its grid connects the drain electrode of described the 4th MOS transistor, and its source electrode connects the 6th mirror current source, and the output current of described the 6th mirror current source is identical with the output current of described the 5th mirror current source;
The second feedback resistance, its first end connects the source electrode of described the 5th MOS transistor, and its second end connects the source electrode of described the 6th MOS transistor.
5. rf modulations output circuit according to claim 2, is characterized in that, described output circuit comprises:
The first output resistance, its first end connects positive source, and its second end connects the negative sense output of described the first amplifying circuit and the forward output of described the second amplifying circuit;
The second output resistance, its first end connects described positive source, and its second end connects the forward output of described the first amplifying circuit and the negative sense output of described the second amplifying circuit.
6. rf modulations output circuit according to claim 1, is characterized in that, also comprises:
The first carrier buffer circuit, described first carrier signal inputs to described the first frequency mixer after described first carrier buffer circuit Hyblid Buffer Amplifier;
The second carrier wave buffer circuit, described the second carrier signal inputs to described the second frequency mixer after described the second carrier wave buffer circuit Hyblid Buffer Amplifier.
7. rf modulations output circuit according to claim 1, is characterized in that, described the first frequency mixer and the second frequency mixer comprise respectively:
The mutual conductance input stage, be converted into current signal by the first input signal or the second input signal that receive;
The reversing switch module, be connected with described mutual conductance input stage, under the control of described first carrier signal or the second carrier signal, described current signal carried out to periodic reverse, produces described the first rf modulated signal or the second rf modulated signal.
8. rf modulations output circuit according to claim 7, is characterized in that, described the first input signal, the first rf modulated signal, the second rf modulated signal are differential signal, and described the second input signal is double-end signal,
Described mutual conductance input stage comprises:
The 7th MOS transistor, its grid receives input signal Zhong De mono-road signal, and its source electrode is connected with the 7th mirror current source;
The 8th MOS transistor, its grid receives default reference voltage, and its source electrode is connected with the drain electrode of described the 7th MOS transistor;
The 9th MOS transistor, its grid receives another road signal in input signal, and its source electrode is connected with the 8th mirror current source;
The tenth MOS transistor, its grid receives described reference voltage, and its source electrode is connected with the drain electrode of described the 9th MOS transistor;
The 3rd feedback resistance, its first end connects the source electrode of described the 7th MOS transistor, and its second end connects the source electrode of described the 9th MOS transistor;
Described reversing switch module comprises:
The 11 MOS transistor, the forward signal of its grid reception carrier signal, its source electrode connects the drain electrode of described the 8th MOS transistor, and its drain electrode is connected to positive source by resistance;
The 12 MOS transistor, the negative-going signal of its grid reception carrier signal, its source electrode connects the drain electrode of described the 8th MOS transistor, and its drain electrode is connected to positive source by resistance;
The 13 MOS transistor, the negative-going signal of its grid reception carrier signal, its source electrode connects the drain electrode of described the tenth MOS transistor, and its drain electrode connects the drain electrode of described the 11 MOS transistor;
The 14 MOS transistor, the forward signal of its grid reception carrier signal, its source electrode connects the drain electrode of described the tenth MOS transistor, and its drain electrode connects the drain electrode of described the 12 MOS transistor;
Wherein, the drain electrode of described the 11 MOS transistor, the 12 MOS transistor, the 13 MOS transistor and the 14 MOS transistor is output.
9. according to the described rf modulations output circuit of any one in claim 1 to 8, it is characterized in that, described the first input signal is vision signal, and described the second input signal is audio signal.
10. a gain compensation amplifier, is characterized in that, comprising:
First order circuit, described first order circuit comprises source follower, input signal is carried out to source electrode and follow, strengthen driving force and isolate rear the generation and follow signal;
Second level amplifier, with described first order circuit, be coupled, described second level amplifier comprises the differential amplifier with source negative feedback, and the described signal of following is amplified to rear generation second level amplifying signal, and its gain increases with described increase of following the frequency of signal;
Third level amplifier, be coupled with described second level amplifier, and described third level amplifier comprises the differential amplifier with source negative feedback, produces third level amplifying signal after being adjusted in default power bracket to the power of described second level amplifying signal.
11. gain compensation amplifier according to claim 10, is characterized in that, described input signal is differential signal, and described first order circuit comprises:
The first MOS transistor, its grid receives the forward signal of described input signal, and its drain electrode connects positive source, and its source electrode connects the first mirror current source;
The second MOS transistor, its grid receives the negative-going signal of described input signal, and its drain electrode connects positive source, and its source electrode connects the second mirror current source.
12. gain compensation amplifier according to claim 11, is characterized in that, described second level amplifier comprises:
The 3rd MOS transistor, its grid connects the source electrode of described the first MOS transistor, and its drain electrode is connected to described positive source by the first resistance, and its source electrode connects the 3rd mirror current source;
The 4th MOS transistor, its grid connects the source electrode of described the second MOS transistor, its drain electrode is connected to described positive source by the second resistance, and its source electrode connects the 4th mirror current source, and the output current of described the 4th mirror current source is identical with the output current of described the 3rd mirror current source;
The first feedback resistance, its first end is connected to the source electrode of described the 3rd MOS transistor, and its second end is connected to the source electrode of described the 4th MOS transistor;
The first feedback capacity, its first end is connected to the source electrode of described the 3rd MOS transistor, and its second end is connected to the source electrode of described the 4th MOS transistor.
13. gain compensation amplifier according to claim 12, is characterized in that, described third level amplifier comprises:
The 5th MOS transistor, its grid connects the drain electrode of described the 3rd MOS transistor, and its source electrode connects the 5th mirror current source;
The 6th MOS transistor, its grid connects the drain electrode of described the 4th MOS transistor, and its source electrode connects the 6th mirror current source, and the output current of described the 6th mirror current source is identical with the output current of described the 5th mirror current source;
The second feedback resistance, its first end connects the source electrode of described the 5th MOS transistor, and its second end connects the source electrode of described the 6th MOS transistor.
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