CN102412228A - 同轴硅通孔互连结构及其制造方法 - Google Patents
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- CN102412228A CN102412228A CN2011103365352A CN201110336535A CN102412228A CN 102412228 A CN102412228 A CN 102412228A CN 2011103365352 A CN2011103365352 A CN 2011103365352A CN 201110336535 A CN201110336535 A CN 201110336535A CN 102412228 A CN102412228 A CN 102412228A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 120
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- 229910052742 iron Inorganic materials 0.000 claims description 8
- 229910052759 nickel Inorganic materials 0.000 claims description 8
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- 239000004332 silver Substances 0.000 claims description 8
- 239000000126 substance Substances 0.000 claims description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 7
- 229910052802 copper Inorganic materials 0.000 claims description 7
- 239000010949 copper Substances 0.000 claims description 7
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- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 6
- KMWBBMXGHHLDKL-UHFFFAOYSA-N [AlH3].[Si] Chemical compound [AlH3].[Si] KMWBBMXGHHLDKL-UHFFFAOYSA-N 0.000 claims description 6
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- 239000011135 tin Substances 0.000 claims description 6
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- 229910021342 tungsten silicide Inorganic materials 0.000 claims description 6
- 229910052725 zinc Inorganic materials 0.000 claims description 6
- 239000011701 zinc Substances 0.000 claims description 6
- 229910052715 tantalum Inorganic materials 0.000 claims description 5
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- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
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Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103545296A (zh) * | 2012-07-12 | 2014-01-29 | 全视科技有限公司 | 具有集成电磁干扰屏蔽的集成电路堆叠 |
CN103787264A (zh) * | 2014-01-21 | 2014-05-14 | 华进半导体封装先导技术研发中心有限公司 | 一种应用于高速宽带光互连的硅通孔器件的制造方法及其器件 |
CN104749846A (zh) * | 2015-04-17 | 2015-07-01 | 京东方科技集团股份有限公司 | 一种阵列基板及其制作方法、显示面板 |
CN105280617A (zh) * | 2015-10-15 | 2016-01-27 | 西安电子科技大学 | 一种重掺杂硅屏蔽硅通孔结构及其制造方法 |
CN105633040A (zh) * | 2016-02-29 | 2016-06-01 | 西安理工大学 | 一种基于pn结的硅通孔结构及其制作方法 |
CN105810663A (zh) * | 2016-05-06 | 2016-07-27 | 西安电子科技大学 | 一种屏蔽差分硅通孔结构及制作方法 |
CN106328584A (zh) * | 2016-11-22 | 2017-01-11 | 武汉光谷创元电子有限公司 | 制造硅通孔的方法和包括硅通孔的芯片 |
CN106992186A (zh) * | 2015-12-29 | 2017-07-28 | 格罗方德半导体公司 | 具有埋置介电层以防止铜扩散的soi晶圆 |
WO2017164816A1 (en) * | 2016-03-24 | 2017-09-28 | Agency For Science, Technology And Research | A through silicon interposer wafer and method of manufacturing the same |
CN107251220A (zh) * | 2015-02-10 | 2017-10-13 | 高通股份有限公司 | 包括多个过孔连接器和具有梯形状的金属结构的集成电路器件 |
CN111682013A (zh) * | 2019-12-30 | 2020-09-18 | 浙江集迈科微电子有限公司 | 一种用于射频微***垂直互联的混合基通孔微同轴结构及其制作方法 |
CN113097183A (zh) * | 2021-03-29 | 2021-07-09 | 电子科技大学 | 一种基于硅通孔的射频垂直互连传输结构 |
CN113948841A (zh) * | 2021-10-14 | 2022-01-18 | 赛莱克斯微***科技(北京)有限公司 | 微同轴传输结构及其制备方法、电子设备 |
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US20110073858A1 (en) * | 2009-09-25 | 2011-03-31 | International Business Machines Corporation | Test Structure for Determination of TSV Depth |
CN102103979A (zh) * | 2009-12-16 | 2011-06-22 | 中国科学院微电子研究所 | 一种制作利用硅通孔构成的三维硅基无源电路的方法 |
US20110171827A1 (en) * | 2010-01-14 | 2011-07-14 | International Business Machines Corporation | Three Dimensional Integration and Methods of Through Silicon Via Creation |
CN102214723A (zh) * | 2011-06-01 | 2011-10-12 | 北京大学 | 半导体辐射敏感装置及其制作方法 |
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US20110073858A1 (en) * | 2009-09-25 | 2011-03-31 | International Business Machines Corporation | Test Structure for Determination of TSV Depth |
CN102103979A (zh) * | 2009-12-16 | 2011-06-22 | 中国科学院微电子研究所 | 一种制作利用硅通孔构成的三维硅基无源电路的方法 |
US20110171827A1 (en) * | 2010-01-14 | 2011-07-14 | International Business Machines Corporation | Three Dimensional Integration and Methods of Through Silicon Via Creation |
CN102214723A (zh) * | 2011-06-01 | 2011-10-12 | 北京大学 | 半导体辐射敏感装置及其制作方法 |
Non-Patent Citations (1)
Title |
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IBM: "Fabrication and characterization of robust through-silicon vias for silicon-carrier applications", 《IBM J. RES. & DEV.》, vol. 52, no. 6, 30 November 2008 (2008-11-30) * |
Cited By (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103545296B (zh) * | 2012-07-12 | 2016-09-21 | 全视科技有限公司 | 具有集成电磁干扰屏蔽的集成电路堆叠 |
CN103545296A (zh) * | 2012-07-12 | 2014-01-29 | 全视科技有限公司 | 具有集成电磁干扰屏蔽的集成电路堆叠 |
CN103787264A (zh) * | 2014-01-21 | 2014-05-14 | 华进半导体封装先导技术研发中心有限公司 | 一种应用于高速宽带光互连的硅通孔器件的制造方法及其器件 |
CN103787264B (zh) * | 2014-01-21 | 2016-06-15 | 华进半导体封装先导技术研发中心有限公司 | 一种应用于高速宽带光互连的硅通孔器件的制造方法及其器件 |
CN107251220A (zh) * | 2015-02-10 | 2017-10-13 | 高通股份有限公司 | 包括多个过孔连接器和具有梯形状的金属结构的集成电路器件 |
CN104749846A (zh) * | 2015-04-17 | 2015-07-01 | 京东方科技集团股份有限公司 | 一种阵列基板及其制作方法、显示面板 |
US10026759B2 (en) | 2015-04-17 | 2018-07-17 | Boe Technology Group Co., Ltd. | Array substrate and manufacturing method therefor, and display panel |
CN105280617A (zh) * | 2015-10-15 | 2016-01-27 | 西安电子科技大学 | 一种重掺杂硅屏蔽硅通孔结构及其制造方法 |
CN106992186A (zh) * | 2015-12-29 | 2017-07-28 | 格罗方德半导体公司 | 具有埋置介电层以防止铜扩散的soi晶圆 |
CN105633040A (zh) * | 2016-02-29 | 2016-06-01 | 西安理工大学 | 一种基于pn结的硅通孔结构及其制作方法 |
CN105633040B (zh) * | 2016-02-29 | 2018-04-27 | 西安理工大学 | 一种基于pn结的硅通孔结构及其制作方法 |
WO2017164816A1 (en) * | 2016-03-24 | 2017-09-28 | Agency For Science, Technology And Research | A through silicon interposer wafer and method of manufacturing the same |
US10882737B2 (en) | 2016-03-24 | 2021-01-05 | Agency For Science, Technology And Research | Through silicon interposer wafer and method of manufacturing the same |
CN105810663A (zh) * | 2016-05-06 | 2016-07-27 | 西安电子科技大学 | 一种屏蔽差分硅通孔结构及制作方法 |
CN105810663B (zh) * | 2016-05-06 | 2018-10-16 | 西安电子科技大学 | 一种屏蔽差分硅通孔结构及制作方法 |
CN106328584A (zh) * | 2016-11-22 | 2017-01-11 | 武汉光谷创元电子有限公司 | 制造硅通孔的方法和包括硅通孔的芯片 |
CN111682013A (zh) * | 2019-12-30 | 2020-09-18 | 浙江集迈科微电子有限公司 | 一种用于射频微***垂直互联的混合基通孔微同轴结构及其制作方法 |
CN113097183A (zh) * | 2021-03-29 | 2021-07-09 | 电子科技大学 | 一种基于硅通孔的射频垂直互连传输结构 |
CN113097183B (zh) * | 2021-03-29 | 2024-02-09 | 电子科技大学 | 一种基于硅通孔的射频垂直互连传输结构 |
CN113948841A (zh) * | 2021-10-14 | 2022-01-18 | 赛莱克斯微***科技(北京)有限公司 | 微同轴传输结构及其制备方法、电子设备 |
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