CN102403455A - 制作相变存储器元件的方法 - Google Patents
制作相变存储器元件的方法 Download PDFInfo
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- CN102403455A CN102403455A CN2010102880953A CN201010288095A CN102403455A CN 102403455 A CN102403455 A CN 102403455A CN 2010102880953 A CN2010102880953 A CN 2010102880953A CN 201010288095 A CN201010288095 A CN 201010288095A CN 102403455 A CN102403455 A CN 102403455A
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CN2010102880953A CN102403455A (zh) | 2010-09-17 | 2010-09-17 | 制作相变存储器元件的方法 |
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CN2010102880953A CN102403455A (zh) | 2010-09-17 | 2010-09-17 | 制作相变存储器元件的方法 |
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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CN1728340A (zh) * | 2004-07-29 | 2006-02-01 | 应用材料有限公司 | 用于制造场效应晶体管门极结构的工艺整合的组合工具和方法 |
US20080131994A1 (en) * | 2006-12-01 | 2008-06-05 | Heon Yong Chang | Method for manufacturing phase change memory device which can stably form an interface between a lower electrode and a phase change layer |
US20090261313A1 (en) * | 2008-04-22 | 2009-10-22 | Macronix International Co., Ltd. | Memory cell having a buried phase change region and method for fabricating the same |
CN101572290A (zh) * | 2009-06-02 | 2009-11-04 | 中国科学院上海微***与信息技术研究所 | 柱状纳米加热电极的制备方法 |
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- 2010-09-17 CN CN2010102880953A patent/CN102403455A/zh active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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CN1728340A (zh) * | 2004-07-29 | 2006-02-01 | 应用材料有限公司 | 用于制造场效应晶体管门极结构的工艺整合的组合工具和方法 |
US20080131994A1 (en) * | 2006-12-01 | 2008-06-05 | Heon Yong Chang | Method for manufacturing phase change memory device which can stably form an interface between a lower electrode and a phase change layer |
US20090261313A1 (en) * | 2008-04-22 | 2009-10-22 | Macronix International Co., Ltd. | Memory cell having a buried phase change region and method for fabricating the same |
CN101572290A (zh) * | 2009-06-02 | 2009-11-04 | 中国科学院上海微***与信息技术研究所 | 柱状纳米加热电极的制备方法 |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING Effective date: 20130107 |
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C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20130107 Address after: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Applicant after: Semiconductor Manufacturing International (Shanghai) Corporation Applicant after: Semiconductor Manufacturing International (Beijing) Corporation Address before: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Applicant before: Semiconductor Manufacturing International (Shanghai) Corporation |
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C12 | Rejection of a patent application after its publication | ||
RJ01 | Rejection of invention patent application after publication |
Application publication date: 20120404 |