CN102394204B - Field electron emission source - Google Patents
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- CN102394204B CN102394204B CN201110325622.8A CN201110325622A CN102394204B CN 102394204 B CN102394204 B CN 102394204B CN 201110325622 A CN201110325622 A CN 201110325622A CN 102394204 B CN102394204 B CN 102394204B
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Abstract
A filed electron emitting source comprises a conductive base body and a carbon nano tube needle point, wherein the carbon nano tube needle point adopts a carbon nano tube sarciniform structure which comprises a plurality of carbon nano tubes axially and directionally extending along the carbon nano tube needle point and connected end to end; the carbon nano tube needle point is provided with a first end and a second end opposite to the first end; and the first end of the carbon nano tube needle point is electrically connected with the conductive base body, and a protruding carbon nano tube is arranged at the second end of the carbon nano tube needle point.
Description
Technical field
The present invention relates to a kind of field emitting electronic source, relate in particular to a kind of field emitting electronic source based on carbon nano-tube.
Background technology
Field emitting electronic source is worked under low temperature or room temperature, have compared with thermal emission electron source in electron tube that energy consumption is low, the advantage such as fast response time and low discharge, therefore substituting thermal emission electron source in electron tube with field emitting electronic source becomes a focus of people's research.
Carbon nano-tube (Carbon Nanotube, CNT) be a kind of new carbon, found in 1991 by Japanology personnel Iijima, refer to " Helical Microtubules of Graphitic Carbon ", S. Iijima, Nature, vol.354, p56 (1991).Carbon nano-tube has extremely excellent electric conductivity, good chemical stability and large draw ratio, and it has and almost approaches the tip end surface of theoretical limit long-pending (tip end surface is long-pending less, its internal field is more concentrated), thereby carbon nano-tube has potential application prospect at field emission vacuum electronic source domain.Current research shows, carbon nano-tube is one of known best field emmision material, and its tip size only has a few nanometer to tens nanometers, has low cut-in voltage, can transmit great current density, and current stabilization, long service life.Thereby carbon nano-tube is a kind of splendid point-like electron source, can be applicable in the electron emission part of the equipment such as electron emission display device, scanning electron microscopy (Scanning Electron Microscope), transmission electron microscope (Transmission Electron Microscope).
Existing carbon nano tube field transmitting electronic source generally comprises a conducting base and a carbon nano-tube, one end of this carbon nano-tube is as field emission tip, the other end of carbon nano-tube and this conducting base electrically connect, refer to " Growth of single-walled Carbon nanotubes on the given Locations for AFM Tips ", Wang Rui, Acta Physico-Chimica Sinica, vol.23, p565 (2007).
But, because single-root carbon nano-tube size is less, in the process that single carbon nano-tube is electrically connected with conducting base, often need the auxiliary of expensive equipment atomic force microscope and scanning tunnel microscope, make this preparation process complicated operation that single-root carbon nano-tube and conducting base is electrically connected to formed field emitting electronic source, cost is higher.This structure that is electrically connected formed field emitting electronic source by single-root carbon nano-tube with matrix, because the size of single-root carbon nano-tube is less, itself and substrate contact area are less, cause the adhesion between carbon nano-tube and matrix less, easily come off, be difficult to bear larger electric field force, make the life-span of this field emitting electronic source shorter.Same because the contact area of single-root carbon nano-tube and conducting base is less, the heat that carbon nano-tube produces in the time forming field emission current is difficult for blazing abroad, and the field emission current that this field emitting electronic source can bear is less.And due to the preparation process complicated operation of this field emitting electronic source, cost is higher, causes the cost of this field emitting electronic source higher.
Therefore, necessaryly provide a kind of field emitting electronic source, this field emitting electronic source field emission performance is good, can bear larger electric field force, and the life-span is longer, and can carry larger field emission current.
Summary of the invention
A kind of field emitting electronic source, it comprises a conducting base, this field emitting electronic source further comprises a carbon nano-tube point, this carbon nano-tube point is a carbon nano-tube pencil structure, this carbon nano-tube pencil structure comprises multiple along the extension of carbon nano-tube point axial orientation and end to end carbon nano-tube, this carbon nano-tube point has a first end and second end relative with first end, the first end of this carbon nano-tube point is electrically connected with this conducting base, and the top of the second end of this carbon nano-tube point is an outstanding carbon nano-tube.
Compared with prior art, this field emitting electronic source has the following advantages: one, the carbon nano-tube point adopting is the carbon nano-tube pencil structure being connected to form by Van der Waals force by multiple carbon nano-tube, its tip only has a carbon nano-tube, the carbon nano-tube at most advanced and sophisticated place is firmly fixing by Van der Waals force by other carbon nano-tube around, and therefore most advanced and sophisticated carbon nano-tube can be born larger electric field force; They are two years old, because the carbon nano-tube as field emission tip is connected with conducting base by carbon nano-tube pencil structure, the foundation area of carbon nano-tube point and conducting base is larger, therefore emission current adds thermogenetic heat and also can conduct by its carbon nano-tube around timely and effectively, therefore this field emitting electronic source can carry larger field emission current.
Brief description of the drawings
Fig. 1 is the structural representation of the field emitting electronic source of the technical program embodiment.
Fig. 2 is the structural representation of carbon nano-tube point in Fig. 1.
Fig. 3 is the stereoscan photograph of the carbon nano-tube point of the technical program embodiment.
Fig. 4 is the transmission electron microscope photo of the carbon nano-tube point of the technical program embodiment.
Fig. 5 is the preparation method's of the field emitting electronic source of the technical program embodiment flow chart.
Fig. 6 is that the carbon nano-tube film of the technical program embodiment is through organic solvent photo after treatment.
Fig. 7 is the carbon nano tube line galvanization heater schematic diagram of the technical program embodiment.
Fig. 8 is the schematic diagram of the carbon nano tube line of the technical program embodiment.
Fig. 9 is the schematic diagram after the carbon nano tube line carbon nano tube line of the technical program embodiment fuses.
Figure 10 is the photo of the carbon nano tube line of the technical program embodiment while being heated to incandescent state.
Figure 11 is the Raman spectrogram of the carbon nano-tube point of the technical program embodiment acquisition.
Figure 12 is the schematic flow sheet that the technical program embodiment is arranged at carbon nano-tube point the method on conducting base.
Figure 13 is the schematic diagram of the optical fiber that is coated with elargol of the technical program embodiment.
Figure 14 is the schematic flow sheet that the technical program embodiment adopts the method for the fixing carbon nano-tube point of conducting resinl.
Figure 15 is the field emitting voltage of the field emitting electronic source that provides of the technical program embodiment and the graph of a relation of electric current.
Embodiment
Describe the technical program field emitting electronic source and preparation method thereof in detail below with reference to accompanying drawing.
Refer to Fig. 1, Fig. 2, Fig. 3 and Fig. 4, the technical program embodiment provides a kind of field emitting electronic source 10, and it comprises a carbon nano-tube point 12 and a conducting base 14.
Described carbon nano-tube point 12 comprises a first end 122 and second end 124 relative with first end 122, and the first end 122 of this carbon nano-tube point 12 is electrically connected with this conducting base 14, and the second end 124 of carbon nano-tube point 12 is for electron emission.The length of this carbon nano-tube point 12 is 0.01 millimeter to 1 millimeter, and diameter is 1 micron to 20 microns.
Described carbon nano-tube point 12 is a carbon nano-tube pencil structure, and this carbon nano-tube pencil structure comprises multiple along carbon nano-tube point 12 axial orientation extension and end to end carbon nano-tube 126, between carbon nano-tube 126, mutually combines closely by Van der Waals force.The second end 124 of carbon nano-tube point 12 is a class taper shape, the diameter of carbon nano-tube point 12 second ends 124 is along reducing gradually away from the direction of first end 122, the top of the second end 124 comprises an outstanding carbon nano-tube 126, and this carbon nano-tube 126 is electron transmitting terminal 128.
Described end to end carbon nano-tube 126 for diameter be that the Single Walled Carbon Nanotube of 0.5 nanometer-50 nanometer, double-walled carbon nano-tube, the diameter that diameter is 1 nanometer-50 nanometer are 1.5 multi-walled carbon nano-tubes of nanometer-50 nanometer or the mixture of its combination in any.The length of this end to end carbon nano-tube 126 is 10 microns-5000 microns.The outstanding carbon nano-tube 126 of the second end 124 of this carbon nano-tube point 12 is as the electron transmitting terminal 128 of field emitting electronic source, the length of electron transmitting terminal 128 is 10 microns-1000 microns, diameter is less than 5 nanometers, is all less than other carbon nano-tube 126 in carbon nano-tube point 12 as length and the diameter of the carbon nano-tube 126 of electron transmitting terminal 128.
This conducting base 14 is made up of electric conducting material, as copper, tungsten, gold, molybdenum, platinum etc.This conducting base 14 can be designed to other shapes according to actual needs, as taper, tiny cylindricality or truncated cone-shaped.This conducting base 14 also can be surface and is formed with the dielectric base of a conductive film.
The first end 122 of this carbon nano-tube point 12 is electrically connected with conducting base 14 by molecular separating force.Be appreciated that between carbon nano-tube point 12 and conducting base 14 and also can be connected by conducting resinl.Position relationship between this carbon nano-tube point 12 and conducting base 14 is not limit, only need guarantee that the first end 122 of this carbon nano-tube point 12 is electrically connected with this conducting base 14, as: carbon nano-tube point 12 is acute angle with the angle of conducting base 14, and carbon nano-tube point 12 is being axially parallel to each other of right angle or carbon nano-tube point 12 and conducting base 14 with the angle of conducting base 14.
Described field emitting electronic source has the following advantages: one, the carbon nano-tube point adopting is the carbon nano-tube pencil structure being connected to form by Van der Waals force by multiple carbon nano-tube, its tip only has a carbon nano-tube, the carbon nano-tube at most advanced and sophisticated place is firmly fixing by Van der Waals force by other carbon nano-tube around, and therefore most advanced and sophisticated carbon nano-tube can be born larger electric field force; They are two years old, because the carbon nano-tube as field emission tip is connected with conducting base by carbon nano-tube pencil structure, therefore emission current adds thermogenetic heat and also can conduct by its carbon nano-tube around timely and effectively, therefore this field emitting electronic source can carry larger field emission current; Its three, in this carbon nano-tube point only by an outstanding carbon nano-tube as field emission tip, the diameter of this carbon nano-tube is less than 5 nanometers, the beam width that therefore this field emitting electronic source forms is less, resolution is higher.
Refer to Fig. 5, Fig. 6, Fig. 7 and Fig. 8, the technical program embodiment provides a kind of method of preparing above-mentioned field emitting electronic source, specifically comprises the following steps:
Step 1 a: carbon nano-tube film is provided, and the carbon nano-tube in this carbon nano-tube film is extended arrangement in the same direction.
The preparation method of this carbon nano-tube film comprises the following steps:
First, provide a carbon nano pipe array to be formed at a substrate, preferably, this array is super in-line arrangement carbon nano pipe array.
In the present embodiment, the preparation method of carbon nano pipe array adopts chemical vapour deposition technique, and its concrete steps comprise: a smooth substrate (a) is provided, and this substrate can be selected P type or N-type silicon base, or select the silicon base that is formed with oxide layer, the present embodiment to be preferably the silicon base that adopts 4 inches; (b) evenly form a catalyst layer at substrate surface, this catalyst layer material can be selected one of alloy of iron (Fe), cobalt (Co), nickel (Ni) or its combination in any; (c) the above-mentioned substrate that is formed with catalyst layer is annealed approximately 30 minutes ~ 90 minutes in the air of 700 DEG C ~ 900 DEG C; (d) substrate of processing is placed in to reacting furnace, is heated to 500 DEG C ~ 740 DEG C under protective gas environment, then pass into carbon-source gas and react approximately 5 minutes ~ 30 minutes, growth obtains carbon nano pipe array, and it is highly greater than 100 microns.This carbon nano-pipe array is classified multiple pure nano-carbon tube arrays parallel to each other and that form perpendicular to the carbon nano-tube of substrate grown as.This carbon nano pipe array and above-mentioned area of base are basic identical.By above-mentioned control growth conditions, in this super in-line arrangement carbon nano pipe array, substantially do not contain impurity, as agraphitic carbon or residual catalyst metal particles etc.
In the present embodiment, carbon source gas can be selected the more active hydrocarbons of chemical property such as acetylene, ethene, methane, and the preferred carbon source gas of the present embodiment is acetylene; Protective gas is nitrogen or inert gas, and the preferred protective gas of the present embodiment is argon gas.
Be appreciated that the carbon nano pipe array that the present embodiment provides is not limited to above-mentioned preparation method.The carbon nano-pipe array that the present embodiment provides is classified the one in single-wall carbon nanotube array, double-walled carbon nano-tube array and array of multi-walled carbon nanotubes as.
Secondly, adopt a stretching tool from carbon nano pipe array, to pull carbon nano-tube and obtain a carbon nano-tube film.
This carbon nano-tube film preparation specifically comprises the following steps: (a) multiple carbon nano-tube segments of selected certain width from above-mentioned carbon nano pipe array, and the present embodiment is preferably and adopts the adhesive tape contact carbon nano pipe array with certain width to select multiple carbon nano-tube segments of certain width; (b) be basically perpendicular to multiple these carbon nano-tube segments of carbon nano pipe array direction of growth stretching with certain speed edge, to form a continuous carbon nano-tube film.
In above-mentioned drawing process, in the plurality of carbon nano-tube segment departs from substrate gradually along draw direction under pulling force effect, due to van der Waals interaction, these selected multiple carbon nano-tube segments are drawn out end to end continuously with other carbon nano-tube segments respectively, thereby form a carbon nano-tube film.This carbon nano-tube film comprises multiple joining end to end and the carbon nano-tube segment of the direction detection extends.In this carbon nano-tube film, the bearing of trend of carbon nano-tube is basically parallel to the draw direction of carbon nano-tube film.
Step 2, provides one first electrode 22 and one second electrode 24, and the two ends of above-mentioned carbon nano-tube film are individually fixed on the first electrode 22 and the second electrode 24, and in this carbon nano-tube film, carbon nano-tube is extended to the second electrode 24 from the first electrode 22.
Between the first electrode 22 and the second electrode 24, maintain a certain distance, and mutually insulated.One end along its draw direction tiling of carbon nano-tube film is adhered on the first electrode 22 and with the first electrode 22 and is electrically connected, the other end along its draw direction tiling of carbon nano-tube film adheres on the second electrode 24 and with the second electrode 24 and is electrically connected, and makes in the middle of carbon nano-tube film unsettled and in extended state.Because carbon nano-tube film itself has certain viscosity, therefore the two ends of carbon nano-tube film directly can be adhered to respectively on the first electrode 22 and the second electrode 24, also can the two ends of carbon nano-tube film be adhered to respectively on the first electrode 22 and the second electrode 24 as elargol by conducting resinl.
This first electrode 22 and the second electrode 24 are made up of electric conducting material, as copper, tungsten, gold, molybdenum, platinum, ito glass etc.The shape of this first electrode 22 and the second electrode 24 is not limit, and only need guarantee that the first electrode 22 and the second electrode 24 have the adhesion of tiling respectively of two ends that a plane can make carbon nano-tube film.In the present embodiment, the first electrode 22 and the second electrode 24 is shaped as a cuboid.Distance between described the first electrode 22 and the second electrode 24 is 50 microns-2 millimeters, and the present embodiment is preferably 320 microns.
Step 3, by with an organic solvent processing this carbon nano-tube film, forms multiple carbon nano tube lines 28.
Thereby by test tube, organic solvent is dropped in to carbon nano-tube film surface and infiltrates whole carbon nano-tube film.Also above-mentioned carbon nano-tube film can be immersed in the container that fills organic solvent and infiltrates together with the first electrode 22 and the second electrode 24.This organic solvent is volatile organic solvent, as ethanol, methyl alcohol, acetone, dichloroethanes or chloroform, preferably adopts ethanol in the present embodiment.After this organic solvent volatilization, under the capillary effect of volatile organic solvent, the end to end carbon nano-tube segment in carbon nano-tube film can partly be gathered into multiple carbon nano tube lines 28.Described carbon nano tube line 28 comprises and multiplely extending and end to end carbon nano-tube 126 along carbon nano tube line 28 axial orientation, the two ends of carbon nano tube line 28 respectively with the first electrode 22 with second electrode 28 is vertical is connected.The diameter of carbon nano tube line 28 is 1 micron-20 microns, and length is 0.05 millimeter-2 millimeters.
Step 4: by these carbon nano tube line 28 galvanization heating fusing, obtain multiple carbon nano-tube points 12.
This step can be carried out under vacuum environment or under the environment of inert gas shielding, and it specifically comprises the following steps:
First, refer to Fig. 7, Fig. 8 and Fig. 9, in the first electrode 22, the second electrode 24 are placed in to a reative cell 20 with the carbon nano tube line 28 being connected with two electrodes, this reative cell 20 comprises a visual windows (not marking in figure), and these reative cell 20 internal pressures are lower than 1 × 10
-1the vacuum state of handkerchief, the vacuum degree of the inside of the present embodiment reative cell 20 is preferably 2 × 10
-5handkerchief.
These reative cell 20 inside can be full of inert gas and replace vacuum environment, as helium or argon gas etc., in order to avoid carbon nano tube line 28 causes structural deterioration in fusing process because of oxidation.
Secondly, between the first electrode 22 and the second electrode 24, apply a voltage, pass into current flow heats fusing carbon nano tube line 28.
The art personnel it should be understood that diameter and the length of the voltage that applies between the first electrode 22 and the second electrode 24 and carbon nano tube line 28 is relevant.In the present embodiment, the diameter of carbon nano tube line 28 is 2 microns, and length is 300 microns, between the first electrode 22 and the second electrode 24, applies the direct voltage of one 40 volts.It is 2000K to 2400K that carbon nano tube line 28 is heated to temperature under the effect of Joule heat, is less than 1 hour heating time.In vacuum DC heating process, can rise gradually by the electric current of carbon nano tube line 28, but very fast electric current just starts decline, until carbon nano tube line 28 is fused.Refer to Figure 10, before fusing, the centre position of each carbon nano tube line 28 there will be bright spot, this is to raise gradually because the effect of Joule heat makes the temperature of carbon nano tube line 28, the inner heat producing of carbon nano tube line 28 will itself conduct to the direction of the first electrode 22 or the second electrode 24 respectively by carbon nano tube line 28 simultaneously, the centre position of carbon nano tube line 28 from the distance of the first electrode 22 or the second electrode 24 farthest, make the temperature at this place the highest, therefore there is bright spot, therefore the centre position of carbon nano tube line 28 the most easily disconnects.When each carbon nano tube line 28 is after this bright spot fusing, two just right carbon nano-tube points 12 are formed, this carbon nano-tube point 12 comprises a first end 122 and second end 124 relative with first end 122, wherein, first end 122 is fixed on the first electrode 22 or the second electrode 124, and the second end 124 is vacant state.Carbon nano-tube point 12 comprises multiple along carbon nano-tube point 12 axial orientation extension and end to end carbon nano-tube 126, between carbon nano-tube 126, mutually combines closely by Van der Waals force.The second end 124 of carbon nano-tube point 12 is a taper shape, and the diameter of the second end 124 is along reducing gradually away from the direction of first end 122, and the top of the second end 124 is an outstanding carbon nano-tube 126, and this carbon nano-tube 126 is electron transmitting terminal 128.The length of this carbon nano-tube point 12 is 0.01 millimeter to 1 millimeter, and diameter is 1 micron to 20 microns.
The vacuum fusing method that the present embodiment adopts, the pollution of port while having avoided Mechanical Method cutting carbon nanotubes line 28, and also in heating process, the mechanical strength of carbon nano tube line 28 can improve, and makes it to possess better mechanical performance.
Referring to Figure 11, is the Raman spectrogram of the second end 124 of carbon nano-tube point 12.As seen from the figure, after Overheating Treatment, there is obvious reduction at the defect peak of the second end 124 of carbon nano-tube point 12 with respect to the defect peak without heat treated carbon nano tube line 28.That is to say, carbon nano-tube point 12 is in the process of fusing, and carbon nano-tube 126 qualities at its second end 124 places are greatly improved.This is because carbon nano-tube defect after Overheating Treatment reduces on the one hand, because be rich in the easily at high temperature collapse of graphite linings of defect on the other hand, the more remaining higher graphite linings of qualities, this result causes being less than other carbon nano-tube 126 in carbon nano-tube point 12 as the diameter of the carbon nano-tube 126 of electron transmitting terminal 128.
Step 5: carbon nano-tube point 12 transfer apparatus are placed in and obtain field emitting electronic source 10 on conducting base 14.
Refer to Figure 12, the method that carbon nano-tube point 12 transfer apparatus are placed on conducting base 14 specifically comprises the following steps:
First, fix conducting base 14 on a three-dimensional moving mechanism.
This three-dimensional moving mechanism can accurately be controlled its moving direction and displacement by computer, and conducting base 14 is accurately moved in three dimensions.
Secondly, mobile conducting base 14, makes conducting base 14 contact with a carbon nano-tube point 12, carbon nano-tube point 12 is bent, to form certain stress in the bending place of carbon nano-tube point 12.
Above-mentioned steps is carried out in the situation that light microscope is auxiliary, to clearly observe the distance between carbon nano-tube point 12 and conducting base 14, and the state of carbon nano-tube point 12.
Finally, apply an electric current between conducting base 14 and carbon nano-tube point 12, carbon nano-tube point 12 is fused, the carbon nano-tube point 12 of fusing is fixed on conducting base 14 and forms field emitting electronic source.
Described electric current can be that direct current can be also alternating current, and its size is 5-30 milliampere, is appreciated that the size of electric current is relevant with the diameter of carbon nano-tube point 12, and in the present embodiment, the diameter of carbon nano-tube point 12 is 3 microns, and electric current is 10 milliamperes.
After above-mentioned steps, between carbon nano-tube point 12 and conducting base 14, be combined by molecular separating force, form a field emitting electronic source 10.
Because the size of carbon nano-tube point 12 is less, as adopted mechanical means that carbon nano-tube point 12 is taken off from electrode, and then carbon nano-tube point 12 is adhered on conducting base 14, be easy to carbon nano-tube point 12 to damage, and be difficult to operation.The method of vacuum current that the technical program adopts fusing can not cause damage to carbon nano-tube point 12, and can a step completes carbon nano-tube point 12 is taken off and adhere to process on conducting base 14 from electrode, simple to operate.
Refer to Figure 13 and Figure 14, the preparation method of above-mentioned field emitting electronic source 10 also can further fix carbon nano-tube point 12 and conducting base 14 by conducting resinl after step 6, and it specifically comprises the following steps:
First, provide a supporter 16, apply certain thickness conducting resinl 18 in one end of this supporter 16.
Described supporter 16 is for supporting conducting resinl 18, and it is a linear structure, and diameter is 50-200 micron, and the material of this supporter 16 is a hard material, and preferably, supporter 16 is that a diameter is the optical fiber of 125 microns.
Described conducting resinl 18 is coated on one end of supporter 16, and its thickness is 5-50 micron, and preferably, these conducting resinl 18 thickness are the elargol of 20 microns.
Secondly, the other end of the uncoated conducting resinl 18 of fixed support body 16 is in a three-dimensional moving mechanism (not shown).
This three-dimensional moving mechanism can accurately be controlled its moving direction and displacement by computer, and supporter 16 is accurately moved in three dimensions.
Again, field emitting electronic source 10 is contacted, the position that adhesion section conducting resinl 18 contacts with conducting base 14 in carbon nano-tube point 12 with one end that supporter 16 is coated with conducting resinl.
Above-mentioned steps is carried out under light microscope.Because conducting resinl 18 is in slurry form, carbon nano-tube point 12 and partially conductive matrix 14 are absorbed in conducting resinl 18, then, slowly movable support body 16 or field emitting electronic source 10, supporter 16 is separated with field emitting electronic source 10, now, because conducting resinl 18 is in slurry form, in the time separating supporter 16 with field emitting electronic source 10, conducting resinl 18 presents wire drawing shape, until this thread conducting resinl 18 is pulled off, partially conductive glue 18 adheres to the contact position of carbon nano-tube point 12 in field emitting electronic source 10 and conducting base 14.In the process of above-mentioned separation conducting resinl 18 and field emitting electronic source 10, owing to there is certain molecular separating force between carbon nano-tube point 12 and conducting base 14, carbon nano-tube point 12 can not come off from conducting base 14.
Finally, dry the above-mentioned field emitting electronic source 10 that is stained with conducting resinl 18, then 10 a period of times of sintering field emitting electronic source at a certain temperature.
In the present embodiment, the field emitting electronic source 10 that is stained with elargol is placed in to a heating furnace, under nitrogen, inert gas or vacuum state, at the temperature of 80-120 DEG C, dry 30 minutes-2 hours, then temperature is risen to 350-500 DEG C, sintering, after 20 minutes-1 hour, is cooled to room temperature.
In above-mentioned sintering process, organic principle in elargol is at high temperature removed, and elargol solidifies, and carbon nano-tube point 12 is fixed on conducting base 14, carbon nano-tube point 12 is firmly combined with conducting base 14, makes field emitting electronic source 10 can bear larger electric field force.Refer to Figure 15, the prepared field emitting electronic source 10 of the present embodiment can be launched 20 microamperes of above electric currents.
In addition, those skilled in the art also can do other and change in spirit of the present invention, and certainly, the variation that these do according to spirit of the present invention, within all should being included in the present invention's scope required for protection.
Claims (8)
1. a field emitting electronic source, it comprises a conducting base, it is characterized in that, this field emitting electronic source further comprises a carbon nano-tube point, this carbon nano-tube point is a carbon nano-tube pencil structure, this carbon nano-tube pencil structure comprises multiple along the extension of carbon nano-tube point axial orientation and end to end carbon nano-tube, this carbon nano-tube point comprises a first end and second end relative with first end, the first end of this carbon nano-tube point is electrically connected with this conducting base, and the top of the second end of this carbon nano-tube point comprises an outstanding carbon nano-tube.
2. field emitting electronic source as claimed in claim 1, is characterized in that, the length of described carbon nano-tube point is 0.01 millimeter-1 millimeter, and diameter is 1 micron-20 microns.
3. field emitting electronic source as claimed in claim 1, is characterized in that, between the multiple carbon nano-tube in described carbon nano-tube point, connects by Van der Waals force.
4. field emitting electronic source as claimed in claim 1, is characterized in that, described end to end carbon nano-tube is the mixture of Single Walled Carbon Nanotube, double-walled carbon nano-tube, multi-walled carbon nano-tubes or its combination in any.
5. field emitting electronic source as claimed in claim 4, it is characterized in that, the diameter of described Single Walled Carbon Nanotube is 0.5 nanometer-50 nanometer, the diameter of double-walled carbon nano-tube is 1 nanometer-50 nanometer, the diameter of multi-walled carbon nano-tubes is 1.5 nanometer-50 nanometers, and the length of described end to end carbon nano-tube is 10 microns-5000 microns.
6. field emitting electronic source as claimed in claim 1, is characterized in that, the length of the outstanding carbon nano-tube at the second end top of described carbon nano-tube point is 10 microns-1000 microns, and its diameter is less than 5 nanometers.
7. field emitting electronic source as claimed in claim 1, is characterized in that, the first end of this carbon nano-tube point is electrically connected with described conducting base by molecular separating force.
8. field emitting electronic source as claimed in claim 1, is characterized in that, the first end of this carbon nano-tube point is electrically connected with described conducting base by conducting resinl.
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| CN103854935B (en) * | 2012-12-06 | 2016-09-07 | 清华大学 | Field emission cathode device and feds |
| CN111048372B (en) * | 2018-10-12 | 2021-04-27 | 中国电子科技集团公司第三十八研究所 | Working method of electron source |
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| CN101042977A (en) * | 2006-03-22 | 2007-09-26 | 清华大学 | Field emission type electron source and its manufacturing method |
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