CN102392293A - Crystal silicon ingot furnace thermal field thermal gate control device and control method thereof - Google Patents
Crystal silicon ingot furnace thermal field thermal gate control device and control method thereof Download PDFInfo
- Publication number
- CN102392293A CN102392293A CN2011103369688A CN201110336968A CN102392293A CN 102392293 A CN102392293 A CN 102392293A CN 2011103369688 A CN2011103369688 A CN 2011103369688A CN 201110336968 A CN201110336968 A CN 201110336968A CN 102392293 A CN102392293 A CN 102392293A
- Authority
- CN
- China
- Prior art keywords
- thermal baffle
- thermal
- crystal
- silicon ingot
- ingot furnace
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Abstract
The invention provides a crystal silicon ingot furnace thermal field thermal gate control device and a control method thereof. In the existing thermal field thermal gate control methods, the preliminary radiant quantity maybe excessive to greatly influence the nucleation quality and increase extra energy consumption; the later-period radiant quantity maybe insufficient to cause bad crystal growth continuity and slow growth speed; and the cooling channels may be unevenly symmetric to cause disadvantaged influences to the crystal nucleation and growth. The crystal silicon ingot furnace thermal field thermal gate control device comprises a heat insulation cage, a heater and a heat exchange table, wherein the heater and the heat exchange table are arranged in the heat insulation cage; a cold plate in which cooling water passes through is arranged below the heat insulation cage; and a heat insulation plate assembly, the central opening of which can be opened toward the periphery or closed toward the center in a central symmetric manner, is formed between the cold plate and the bottom of the heat insulation cage. In the invention, a central symmetric opening and closing method is adopted, so that the crystal growth with low energy consumption can be kept, the cooling area can be fully utilized and the preliminary nucleation and stable oriented growth of crystals can be effectively controlled.
Description
Technical field
The invention belongs to crystal silicon ingot furnace ingot casting technology field, relate to a kind of popular gear of crystal silicon ingot furnace thermal field that adopts the centrosymmetry folding.
Background technology
The crystal silicon ingot furnace is a kind of silicon remelting casting unit, is one important process equipment of preparation silicon chip of solar cell.
The quality of crystal silicon ingot furnace crystal growth system mainly is to be decided by the thermal field in the stove, and the quality of thermal field is then concentrated and is reflected in structure popular in the thermal field and the control.
An ideal ingot furnace crystal growth system is can at first produce a critical condensate depression to make the preferential herein nucleation of melt in the centre of crucible bottom; The form that the nucleus that forms is rolled into a ball with spherical crown shape embryo under the common influence that radially reaches longitudinal temperature gradient is to expansion all around; The curvature of solid-liquid interface tends towards stability gradually in this process; After receiving the sidewall of crucible constraint, growth vertically upward under the longitudinal temperature gradient effect again.
The popular structure of fine not only can be controlled the initial stage nucleation in the growing system; Simultaneously can also impel the temperature variation in the growing system to present distribution symmetrically; And suitable thermograde can be provided for the crystal growth in later stage; Guarantee the speed and the quality of crystal growth, energy efficient reduces cost.
The folding of present traditional crystal silicon ingot furnace thermal field mainly contains following several method:
1. carry on the adiabatic cage making between heat exchange platform and the cold wall of body of heater and form radiation channel, be called for short the side plate crystal pulling method, see Fig. 1.
The side plate crystal pulling method mainly is that four side plates with the heat insulating cage body that constitutes thermal field are designed to a moving parts; Side plate down moves and can the long brilliant thermal field of polysilicon remelting be closed; Energising heats up the well heater in the thermal field, with heat fused polysilicon starting material; Side plate parts up promotes, and then opens the thermal field chamber, exposes the heat exchange platform, forms temperature drop ladder field, through the certain process step, realizes the directional long crystal process.
2. adiabatic base plate moves down and makes and form radiation channel (the applicant's patent 200820121103.3) between heat exchange platform and the cold wall of body of heater, is called for short the base plate lifting and lowering method, sees Fig. 2.
Method 1 is the same with method 2, can control crystal initial stage nucleation, but later stage radiation quantity deficiency causes the bad and poor growth of crystal growth continuity, also can't realize the quick cooling of silicon ingot, has increased ingot casting time and energy consumption.
3. adiabatic base plate is displaced sideways, and makes to form radiation channel between the cold wall in heat exchange platform and bottom, is called for short base plate pull method, sees Fig. 3.
Base plate pull method is that the bottom with the adiabatic cage body of the insulation that constitutes thermal field is provided with one group of adiabatic base plate that can be displaced sideways.Water flowing cooling block and heat exchange platform with the thermal field bottom when closed separate, and after starting material melt fully, take out the adiabatic base plate of bottom by certain process step, form terraced of temperature drop, realize the directional long crystal process.
This method can access large-scale radiation channel, but can't control the initial stage nucleation, and thermal shocking is big, and has increased additional energy consumption.
4. the blinds warming plate turns an angle and opens, and makes to form radiation channel (the applicant's patented claim 201010607129.0) between the cold wall in heat exchange platform and bottom, is called for short blinds folding method, sees Fig. 4.
This method is the technological innovation of being made to existing some popular existing problems by the applicant, can effectively silicon ingot initial stage nucleation and energy consumption reasonably be controlled through control blinds turn-off angular dimension.But, since blinds be not around symmetrical structure, formation be the strip cooling zone, be unfavorable for controlling uniformly the heat exchange of heat exchange platform bottom, cause crystal growth of poor quality.
Above-mentioned several method respectively has relative merits.According to the ultimate principle of heat-exchanging method, the size of radiation quantity has determined in the unit time through the energy between heat exchange platform and the cold wall.Structure through the adjustment heat dissipation region can play the effect of improving thermal field.Different bottom heat dissipation region and structure designs have different effects.The initial radiation amount is crossed conference greatly influences into nuclear mass, and increases additional energy consumption, like method 3; Later stage radiation quantity deficiency causes the crystal growth continuity bad and the speed of growth is slow, like method 1 and method 2; The inhomogeneous symmetry of heat dissipation channel also can cause adverse influence to crystal nucleation and growth, like method 4.
Summary of the invention
Technical problem to be solved by this invention is to overcome the defective that above-mentioned prior art exists; The popular gear of the crystal silicon ingot furnace thermal field that provides a kind of thermal baffle assembly can adopt centrosymmetry folding method; It utilizes centrosymmetry folding method that thermal baffle is carried out folding, makes the ingot casting process be more prone to control and also reduces process cycle time and energy consumption as far as possible.
For this reason; The present invention adopts following technical scheme: the popular gear of a kind of crystal silicon ingot furnace thermal field; Comprise adiabatic cage, place well heater and heat exchange platform in the adiabatic cage; The below of adiabatic cage is provided with the cold drawing of inner logical water coolant, it is characterized in that: be provided with between described cold drawing and the adiabatic cage bottom opening that wherein is formed centrally can with centrosymmetric mode gradually to around open or to the thermal baffle assembly of center closure.
As the further of technique scheme improved and replenish, the present invention takes following technical measures:
Described thermal baffle assembly is made up of the thermal baffle more than two, and adjacent thermal baffle adopts the syndeton of overlap joint, and adjacent thermal baffle adopts the syndeton of overlap joint.Shape to thermal baffle is not done specific requirement, can be fan-shaped round edge shape, straightsided shape, round edge shape or other shapes; The quantity of thermal baffle can be two, four or polylith.
The preferred structure of said thermal baffle assembly is: it is the fan-shaped round edge shape thermal baffle that circumferentially is uniformly distributed with by four and forms, and a side bottom of said thermal baffle has an arc utensil receiving opening, and the opposite side surface has arc overlap joint platform.The arc utensil receiving opening of one thermal baffle is used to hold the arc overlap joint platform of adjacent thermal baffle, thereby it is ridden on the adjacent thermal baffle.Realize both overlap joints through arc overlap joint platform, guaranteed the insulated space sealing, reduce energy waste in fusing and annealing stage.
Be provided with the linkage assembly of connection and gearing between the adjacent thermal baffle, guaranteed that the relative movement between each piece thermal baffle is accurate.
The bottom of thermal baffle assembly has been provided with the support slide mechanism of support and sliding action, guarantees that thermal baffle is along confirming the track slide switching.
The bottom of thermal baffle assembly is provided with the carriage of support together and positioning action, guarantees all thermal baffles slide switching on same plane.
Described thermal baffle is connected with driving mechanism through girt.During the drive mechanism girt, the mode that the opening at thermal baffle center is centrosymmetric gradually to around open or closed to the center, in order to accomplish the folding of thermal baffle assembly.
The linkage assembly of said thermal baffle or support slide mechanism can be by resistant to elevated temperatures metal or nonmetal processing.
The popular gear of thermal field of the present invention both can cooperate well heater use up and down, also can cooperate side heater to use, and can also cooperate the thermal field of many group well heaters and mobile crucible to use.
The control method of the popular gear of above-mentioned crystal silicon ingot furnace thermal field is following:
When silicon crystal is in the heat fused stage, the thermal baffle assembly is in closure state, keeps the heating space of sealing, guarantees that internal heat do not scatter and disappear, and impels the quick completion of crystalline melting process high-level efficiency, low power consuming.
At crystal growing process in earlier stage, slowly the pull thermal baffle forms central smaller opening, at this moment, will produce one at the opening correspondence position and cross cool region, and critical here forming core merit reduces, and preferentially forms nucleus; When getting into crystal growth mid-term, according to processing requirement, further pull thermal baffle; Open bigger opening, gradually to slowly opening all around, the process that thermal baffle is opened makes and obtains certain thermograde in the melt opening with centrosymmetric mode; For crystal growth provides power, and whole radiation areas are in centrosymmetry always and distribute, and impel that temperature also is to present centrosymmetry to distribute in the melt; Be beneficial to the crystal vertical-growth, guarantee crystal mass; At last, when being in the long brilliant later stage, thermal baffle can be opened by full stroke, exposes the thermal field bottom opening fully, has fully guaranteed the bottom heat dissipation channel, improves the crystalline speed of growth, cuts down the consumption of energy, and practices thrift cost.In each stage in crystal growing process, the size of its opening is by the processing requirement decision in this stage.
When crystal is in annealing stage, the thermal baffle of bottom pull fast guarantees that to closure state the temperature field is even up and down.
When crystal is in colling stages, the bottom thermal baffle also fast pull make and reduce process cycle by the crystal fast cooling to full-gear.
Centrosymmetry folding method can guarantee the heat radiation of thermal field bottom symmetrically effectively, also makes things convenient for the infrared measurement of temperature of bottom centre.
The popular gear of thermal field of the present invention combines centrosymmetry folding method, can keep the crystal growth of less energy-consumption, can make full use of area of dissipation again simultaneously, can also effectively control crystal initial stage nucleation and steady oriented growth; Make the bottom radiator structure both have the good control ability, also possessed the potentiality of big heat, become nuclear control and crystal orientation to grow fast and the later stage cools off fast to the silicon ingot initial stage, can both well satisfy processing requirement.
Description of drawings
Fig. 1-4 is four kinds of folding method synoptic diagram of present crystal silicon ingot furnace thermal field.
Fig. 5 is the structural representation of the popular gear of thermal field of the present invention.
The thermal baffle assembly that Fig. 6-7 constitutes for four fan-shaped round edge form thermal baffle overlap joints of the present invention; Among the figure, the 5-thermal baffle, the 6-linkage assembly, 7-supports slide mechanism, 8-carriage, 9-girt.Wherein, Fig. 7 is for hiding the synoptic diagram of two thermal baffles 5 and carriage 8.
Fig. 8 be linkage assembly 6 among Fig. 7 linking part A-A to diagrammatic cross-section.
The part thermal baffle assembly that Fig. 9 constitutes for four straight flange forms of the present invention thermal baffle overlap joint.
The part thermal baffle assembly that Figure 10 constitutes for two round edge forms of the present invention thermal baffle overlap joint.
The part thermal baffle assembly that Figure 11 constitutes for two straight flange forms of the present invention thermal baffle overlap joint.Embodiment
The popular gear of thermal field shown in Fig. 5-11; Be provided with the crucible 2 and heat exchange platform 3 that holds the crystal silicon raw material in the adiabatic cage 1; The below of adiabatic cage 1 is provided with the cold drawing 4 of inner logical water coolant; This cold drawing and adiabatic cage are provided with the thermal baffle assembly between the bottom, the opening that is formed centrally in this thermal baffle assembly can with centrosymmetric mode gradually to around open or to the center closure.
Described thermal baffle assembly is the fan-shaped round edge shape thermal baffle 5 that circumferentially is uniformly distributed with by four and forms, and a side bottom of said thermal baffle has an arc utensil receiving opening, and the opposite side surface has arc overlap joint platform; The arc utensil receiving opening of one thermal baffle is used to hold the arc overlap joint platform of adjacent thermal baffle, thereby it is ridden on the adjacent thermal baffle.Be provided with the linkage assembly 6 of connection and gearing between the adjacent thermal baffle.The bottom of thermal baffle assembly is provided with carriage 8, stationkeeping and support and positioning action.The bottom of thermal baffle assembly also has been provided with the support slide mechanism 7 of support and sliding action.Thermal baffle 5 is connected with driving mechanism through girt 9.As shown in Figure 7, it is fixed to support slide mechanism 7, and main drive controlling girt 9 to-and-fro movements drive other both sides thermal baffle through linkage assembly 6 and move reciprocatingly, and the structure that wherein connects thermal baffle reciprocatingly slides on support slide mechanism 7.By the linking phantom view of the visible linkage assembly 6 of Fig. 8, two bars connect the transmission of sliding with the sleeve mode.
When silicon crystal was in the fusion stage, the popular structure in bottom was the original state of sealing, guaranteed that internal heat is lost, impelled crystalline melting process high-level efficiency, the quick completion of low power consuming.
Accomplish when fusing, prepare to get into crystal growth phase, through driving mechanism, the pulling girt drives each piece thermal baffle along setting stroke sliding opening certain opening, accomplishes the control to crystal growth initial stage nucleation.Wherein each piece thermal baffle passes through linkage assembly separately and supports slide mechanism to guarantee that relative position is accurate.
Driving mechanism is confirmed the size of actual aperture according to processing requirement, guarantees all can obtain suitable thermograde in each stage of crystal growth, reaches warm field distribution symmetrically, obtains high quality crystal.
After crystal growth finishes, drive thermal baffle by driving mechanism and get back to the first closure state, guarantee the warm field distribution of homogeneous up and down, accomplish annealing process.
After annealing finishes, drive the maximum that thermal baffle opens to opening fast, accomplish process for cooling by driving mechanism.
Claims (8)
1. the popular gear of a crystal silicon ingot furnace thermal field; Comprise adiabatic cage, place well heater and heat exchange platform in the adiabatic cage; The below of adiabatic cage is provided with the cold drawing of inner logical water coolant, it is characterized in that: the opening that is formed centrally in being provided with between described cold drawing and the adiabatic cage bottom can with centrosymmetric mode gradually to around open or to the thermal baffle assembly of center closure.
2. the popular gear of crystal silicon ingot furnace thermal field according to claim 1 is characterized in that described thermal baffle assembly is made up of two and above thermal baffle, and adjacent thermal baffle adopts the syndeton that overlaps.
3. the popular gear of crystal silicon ingot furnace thermal field according to claim 2; It is characterized in that described thermal baffle assembly is the fan-shaped round edge shape thermal baffle that circumferentially is uniformly distributed with by four and forms; One side bottom of said thermal baffle has an arc utensil receiving opening, and the opposite side surface has arc overlap joint platform.
4. the popular gear of crystal silicon ingot furnace thermal field according to claim 3 is characterized in that, has been provided with the linkage assembly of connection and gearing between the adjacent thermal baffle.
5. the popular gear of crystal silicon ingot furnace thermal field according to claim 3 is characterized in that the bottom of said thermal baffle assembly is provided with the carriage of support together and positioning action.
6. the popular gear of crystal silicon ingot furnace thermal field according to claim 3 is characterized in that the bottom of said thermal baffle assembly has been provided with the support slide mechanism of support and sliding action.
7. the popular gear of crystal silicon ingot furnace thermal field according to claim 3 is characterized in that described thermal baffle is connected with driving mechanism through girt.
8. the control method of the popular gear of each said crystal silicon ingot furnace thermal field of claim 1-7, its method is following:
When silicon crystal is in heat fused during the stage, the thermal baffle assembly is in closure state; At crystal growing process in earlier stage, slowly the pull thermal baffle forms smaller opening in the center of thermal baffle assembly, to accomplish the control to crystal growth initial stage nucleation; When getting into crystal growth mid-term, further pull thermal baffle, the mode that opening is centrosymmetric gradually to around slowly open; When being in the long brilliant later stage, full stroke is opened thermal baffle, and opening is in maximum, exposes the thermal field bottom fully;
When crystal is in annealing stage, the pull thermal baffle is to closure state fast; When crystal is in colling stages, the pull thermal baffle is to full-gear fast.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011103369688A CN102392293A (en) | 2011-10-31 | 2011-10-31 | Crystal silicon ingot furnace thermal field thermal gate control device and control method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011103369688A CN102392293A (en) | 2011-10-31 | 2011-10-31 | Crystal silicon ingot furnace thermal field thermal gate control device and control method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102392293A true CN102392293A (en) | 2012-03-28 |
Family
ID=45859667
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011103369688A Pending CN102392293A (en) | 2011-10-31 | 2011-10-31 | Crystal silicon ingot furnace thermal field thermal gate control device and control method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102392293A (en) |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102732961A (en) * | 2012-06-01 | 2012-10-17 | 沈阳森之洋光伏科技有限公司 | Cooling method and cooling apparatus of polysilicon ingot furnace |
| CN102978697A (en) * | 2012-11-29 | 2013-03-20 | 杭州精功机电研究所有限公司 | Movable curtain door device for crystalline silicon ingot furnace and control method of device |
| CN103590095A (en) * | 2012-08-13 | 2014-02-19 | 上海仁翔新材料科技有限公司 | Crystal directional growth thermal balancing apparatus |
| CN104674341A (en) * | 2015-03-20 | 2015-06-03 | 重庆大全新能源有限公司 | Polycrystalline ingot furnace and directional solidification device and polycrystalline ingot method thereof |
| JP2015163575A (en) * | 2014-01-29 | 2015-09-10 | 京セラ株式会社 | Casting device and production method of ingot |
| CN106868585A (en) * | 2017-04-23 | 2017-06-20 | 连云港清友新能源科技有限公司 | For the thermal field structure of oversize silicon ingot |
| CN106868586A (en) * | 2017-04-23 | 2017-06-20 | 连云港清友新能源科技有限公司 | For the heat exchange control device of the polycrystalline ingot furnace of oversize silicon ingot |
| CN108546989A (en) * | 2018-06-12 | 2018-09-18 | 山东大海新能源发展有限公司 | A kind of preparation process and its polycrystal silicon ingot of polycrystal silicon ingot |
| CN110923803A (en) * | 2019-12-25 | 2020-03-27 | 南京晶升能源设备有限公司 | Semiconductor silicon material consumable material growth furnace and silicon material preparation method |
| CN111394790A (en) * | 2020-04-26 | 2020-07-10 | 新余学院 | Low-impurity polycrystalline silicon ingot furnace |
| CN112176407A (en) * | 2020-10-21 | 2021-01-05 | 苏州昀丰半导体装备有限公司 | Thermal field structure of square silicon core ingot furnace and preparation method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201962406U (en) * | 2011-01-29 | 2011-09-07 | 大连隆田科技有限公司 | Bipartition tieplate type thermorytic smelting furnace for polycrystalline silicon ingot |
| CN202323097U (en) * | 2011-10-31 | 2012-07-11 | 杭州精功机电研究所有限公司 | Heat field and heat door control device of crystal silicon ingot furnace adopting centrosymmetric opening and closing |
-
2011
- 2011-10-31 CN CN2011103369688A patent/CN102392293A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201962406U (en) * | 2011-01-29 | 2011-09-07 | 大连隆田科技有限公司 | Bipartition tieplate type thermorytic smelting furnace for polycrystalline silicon ingot |
| CN202323097U (en) * | 2011-10-31 | 2012-07-11 | 杭州精功机电研究所有限公司 | Heat field and heat door control device of crystal silicon ingot furnace adopting centrosymmetric opening and closing |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102732961A (en) * | 2012-06-01 | 2012-10-17 | 沈阳森之洋光伏科技有限公司 | Cooling method and cooling apparatus of polysilicon ingot furnace |
| CN103590095A (en) * | 2012-08-13 | 2014-02-19 | 上海仁翔新材料科技有限公司 | Crystal directional growth thermal balancing apparatus |
| CN102978697A (en) * | 2012-11-29 | 2013-03-20 | 杭州精功机电研究所有限公司 | Movable curtain door device for crystalline silicon ingot furnace and control method of device |
| CN102978697B (en) * | 2012-11-29 | 2016-03-23 | 杭州精功机电研究所有限公司 | A kind of crystal silicon ingot furnace moves act door gear and control method thereof |
| JP2015163575A (en) * | 2014-01-29 | 2015-09-10 | 京セラ株式会社 | Casting device and production method of ingot |
| CN104674341A (en) * | 2015-03-20 | 2015-06-03 | 重庆大全新能源有限公司 | Polycrystalline ingot furnace and directional solidification device and polycrystalline ingot method thereof |
| CN106868585A (en) * | 2017-04-23 | 2017-06-20 | 连云港清友新能源科技有限公司 | For the thermal field structure of oversize silicon ingot |
| CN106868586A (en) * | 2017-04-23 | 2017-06-20 | 连云港清友新能源科技有限公司 | For the heat exchange control device of the polycrystalline ingot furnace of oversize silicon ingot |
| CN108546989A (en) * | 2018-06-12 | 2018-09-18 | 山东大海新能源发展有限公司 | A kind of preparation process and its polycrystal silicon ingot of polycrystal silicon ingot |
| CN110923803A (en) * | 2019-12-25 | 2020-03-27 | 南京晶升能源设备有限公司 | Semiconductor silicon material consumable material growth furnace and silicon material preparation method |
| CN110923803B (en) * | 2019-12-25 | 2023-11-10 | 南京晶升装备股份有限公司 | Semiconductor silicon material consumable growth furnace and silicon material preparation method |
| CN111394790A (en) * | 2020-04-26 | 2020-07-10 | 新余学院 | Low-impurity polycrystalline silicon ingot furnace |
| CN112176407A (en) * | 2020-10-21 | 2021-01-05 | 苏州昀丰半导体装备有限公司 | Thermal field structure of square silicon core ingot furnace and preparation method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102392293A (en) | Crystal silicon ingot furnace thermal field thermal gate control device and control method thereof | |
| CN202323097U (en) | Heat field and heat door control device of crystal silicon ingot furnace adopting centrosymmetric opening and closing | |
| CN108588825A (en) | A kind of moveable ingot furnace of side heater and its casting ingot process | |
| CN102021644A (en) | Crystal silicon ingot casting furnace thermal field thermal door control device | |
| CN103243380B (en) | The brilliant preparation method of horizontal orientation district clinkering of large size Re:YAG series laser crystal | |
| CN102400215A (en) | Variable heat exchange device of polycrystal silicon ingot furnace and control method thereof | |
| CN102162125A (en) | Thermal field structure of polysilicon ingot casting furnace | |
| CN101851782A (en) | Double-cavity heat-insulation cage of second single crystal silicon ingot production furnace | |
| CN104313680A (en) | Vertical pipe furnace apparatus for crystal growth and application method thereof | |
| CN103966657B (en) | Ingotting furnace for polycrystalline silicon and quasi single crystal silicon and application method for ingotting furnace | |
| CN102965727B (en) | Polycrystalline silicon ingot and casting method thereof | |
| CN103422165A (en) | Polycrystalline silicon and preparation method thereof | |
| CN101481825B (en) | Crystal growth furnace with convection type heat radiation structure | |
| CN101323973A (en) | Polysilicon directional long crystal thermal field | |
| CN103132142A (en) | Polycrystalline silicon ingot and manufacturing method thereof | |
| CN100404730C (en) | Crystal growth device and method | |
| CN106757312A (en) | A kind of silicon single-crystal pullup stove | |
| CN102425006A (en) | Method and thermal field for growing ingot polycrystal silicon by adopting directional solidification method | |
| CN101182646A (en) | Device and method for growing hemisphere type crystal by heat exchange method | |
| CN202744660U (en) | Thermal field structure for ultra-large crystal grain ingot furnace | |
| CN208414631U (en) | A kind of moveable ingot furnace of side heater | |
| CN103590096B (en) | The method of seed crystal Bock Altitude in ingot furnace and control class single crystal casting process | |
| CN203065635U (en) | Bottom enhanced cooling device | |
| CN201962416U (en) | Hot door control device for thermal field of crystal silicon ingot furnace | |
| CN102978697B (en) | A kind of crystal silicon ingot furnace moves act door gear and control method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20120328 |