CN102386057B - Method for lowering phosphorus concentration on semiconductor substrate surface - Google Patents
Method for lowering phosphorus concentration on semiconductor substrate surface Download PDFInfo
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- CN102386057B CN102386057B CN 201010271183 CN201010271183A CN102386057B CN 102386057 B CN102386057 B CN 102386057B CN 201010271183 CN201010271183 CN 201010271183 CN 201010271183 A CN201010271183 A CN 201010271183A CN 102386057 B CN102386057 B CN 102386057B
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Abstract
The invention provides a method for lowering phosphorus concentration on a semiconductor substrate surface, which comprises the following steps: washing and drying a semiconductor substrate; enabling the semiconductor substrate surface to be exposed in an atmosphere with a hydrogen flow F equal to or larger than 3000cm3/min, and keeping for a time of T equal to or larger than 20 minutes. Due to the fact that hydrogen atoms are easier to combine with a dangling bond on the semiconductor substrate surface, the phosphorus concentration on the semiconductor substrate surface can be lowered by reducing collision. From the view of effects, existence of the hydrogen atoms embellishes a dangling bond status of the semiconductor substrate surface, and hinders combination between the hydrogen atomsand the dangling bond. The method is low in cost and convenient to achieve, and solves a problem that relevant electricity parameters of a metal oxide semiconductor (MSO) transistor oxide layer driftdue to the fact that a silicon wafer is exposed in air containing phosphorus atoms and component performance is lowered.
Description
Technical field
The present invention relates to the microelectronic technique flow process, be specifically related to a kind of method that reduces the oxidation furnace phosphorus concentration.
Background technology
In the MOS transistor manufacture craft, phosphorus atoms is a kind of important source ion implantation.As when making MOS transistor p district, generally need to inject the doping content that phosphorus changes substrate, to change the type of its charge carrier.Because number and the MOS performance of devices of charge carrier are closely related, so the concentration of phosphorus atoms can be to performance of devices, particularly the electrical parameter of device makes a big impact.
In the oxide-film production process, the substrate slice that needs to make can be sent to first in the oxidation furnace board transportation cabinet (Carrier Stocker).Because its transportation cabinet is connected with the ultra-clean chamber atmosphere, and the micro dust particle in the conventional filtration atmosphere only in the ultra-clean chamber, so the inevasible meeting of the semiconductor device in the board touches the air in the ultra-clean chamber.If contain phosphorus atoms in the air, then easily cause phosphorus atoms to be attached to the substrate surface of wafer, even be diffused in the substrate, thereby device is produced harmful effect.
Above-mentioned situation is particularly important in the gate oxide process of making MOS transistor.The monitoring situation shows, if do not pass through any protective treatment, the silicon chip that is positioned over gate oxide board (Gate Oxide Tool) is in the air atmosphere that phosphorus atoms concentration acquires a certain degree after idle a period of time (such as 24 hours), then can cause phosphorus atoms to be adsorbed on silicon chip surface, and device reliability is impacted.Tracing it to its cause is that there are the dangling bonds of silicon in silicon chip surface, contains the phosphorus atoms that moves freely in the denier air, then easily is combined with the dangling bonds of silicon, causes phosphorus atoms to be attracted to silicon chip surface.In the subsequent technique process, may cause phosphorus atoms further to diffuse into silicon chip substrate if continue through heating or other process meanses.
For requiring extremely harsh MOS transistor technique with surface treatment, phosphorus atoms is in the existence of semiconductor surface or substrate, to impact the relevant electrical parameter of oxide layer, as produce raceway groove drift, NMOS accelerates, PMOS is slack-off, causes the subsequent technique procedural test inaccurate, even the MOS transistor device reliability reduces.
The method that reduces at present the phosphorus concentration of semiconductor substrate surface mainly contains two kinds.The firstth, in technical process, reduce as much as possible the time that Semiconductor substrate exposes in containing the phosphorus atoms air.But because the method is in practical operation, Semiconductor substrate is exposed to the often bad control of airborne time, and the overlong time that easily causes Semiconductor substrate to expose in air is unfavorable to device performance.Second method is that the filter of dephosphorization is installed at oxidation furnace board air inlet, avoids phosphorus atoms to enter in the oxidation furnace board.This kind method is expensive, the requirement certain to being equipped with of board.
Summary of the invention
The technical problem to be solved in the present invention provides a kind of method that reduces the semiconductor surface phosphorus concentration, the method cost is lower, it is convenient to realize, solution is exposed at silicon chip and causes the parameter drift of MOS transistor oxide layer associated electrical in the air that contains phosphorus atoms, even the problem of device performance reduction.
For solving the problems of the technologies described above, a kind of method that reduces the semiconductor surface phosphorus concentration provided by the invention comprises: Semiconductor substrate is cleaned, dried; It is F 〉=3000cm that described semiconductor substrate surface is exposed to hydrogen flowing quantity
3In the atmosphere of/min, retention time T 〉=20 minute.
As a kind of preferred scheme, described Semiconductor substrate is silicon substrate.
As a kind of preferred scheme, after Semiconductor substrate cleaned, dries, there were dangling bonds in described semiconductor substrate surface, namely has unsaturated ionic bond.
As a kind of preferred scheme, described cleaning operation refers to clean conventional impurity in the semiconductor processes of substrate surface.
As a kind of preferred scheme, described Semiconductor substrate is cleaned, oven dry is placed on the oxidation furnace board.
As a kind of preferred scheme, described hydrogen flowing quantity F, 3000cm
3/ min≤F≤5000cm
3/ min.
As a kind of preferred scheme, described retention time T, 20 minutes≤T≤60 minutes.
Because semiconductor surface for example silicon chip surface easily forms dangling bonds, because dangling bonds are in state of activation, easily with airborne other particles, such as the phosphorus atoms combination, cause the substrate surface phosphorus concentration to increase, when phosphorus atoms concentration surpasses to a certain degree, as surpassing safe range 10
11Atom/cm
2The time, to cause obvious impact to performance of semiconductor device, for example for MOS transistor technique, surpass the phosphorus atoms of above-mentioned concentration in the existence of semiconductor substrate surface, to impact the relevant electrical parameter of oxide layer, reduce the MOS transistor device reliability.
A kind of method that reduces the semiconductor surface phosphorus concentration provided by the invention, the method is by placing atmosphere of hydrogen with Semiconductor substrate, even phosphorus atoms has been adsorbed on original semiconductor surface, be combined with the dangling bonds of this semiconductor surface but hydrogen atom is easier, reduce the concentration of semiconductor surface phosphorus atoms.On effect, hydrogen atom have a modifying semiconductor substrate surface defective, hindered the combination of phosphorus atoms and dangling bonds.Therefore a kind of method that reduces the semiconductor surface phosphorus concentration provided by the invention reduces phosphorus atoms to the harmful effect of semiconductor device, improves performance of devices.
Embodiment
In the present embodiment main description reduces the method for phosphorus concentration for semiconductor substrate surface.This Semiconductor substrate is silicon substrate, and there are unsaturated dangling bonds in its surface.In the present embodiment, the requirement of Semiconductor substrate is not limited to silicon substrate, can be other non-silicon substrates, as long as there are unsaturated dangling bonds in semiconductor substrate surface, and can follow the hydrogen atom combination, just can satisfy the requirement of Semiconductor substrate in the present embodiment.
The present embodiment reduces the method for semiconductor substrate surface phosphorus concentration and at first silicon substrate is carried out the routine cleaning, this routine is cleaned and is referred to the ammoniacal liquor of using that carries out in the microelectronic technique, sulfuric acid, hydrochloric acid, hydrogen fluoride, deionized waters etc. are removed the impurity on the silicon chip substrate, the above-mentioned ammoniacal liquor of selecting, sulfuric acid, hydrochloric acid, hydrogen fluoride, the materials such as deionized water are as the criterion not damage substrate.Clean complete after, with silicon chip extracting oven dry, the time of oven dry, residual moisture was as the criterion on the silicon chip to remove.
Clean complete after, it is F 〉=3000cm that this silicon chip surface is exposed to hydrogen flowing quantity
3In the atmosphere of/min, retention time T 〉=20 minute.Preferred hydrogen flowing quantity is 3000cm in the above-mentioned silicon chip hydrogen treat process
3/ min≤F≤5000cm
3/ min, the preferred retention time is 20 minutes≤T≤60 minute.
Silicon chip through after the above-mentioned processing contains in the higher air of phosphorus atoms concentration even be exposed to, and this silicon chip surface also can play the effect that reduces silicon chip surface phosphorus atoms concentration, and keeps at least silicon chip surface all to be in 10 of phosphorus concentration in 24 hours
11Atom/cm
2Within the safe range.Even therefore the silicon chip through hydrogen treat is exposed to the air that contains phosphorus atoms in technical process, also can reduce the concentration of silicon chip surface phosphorus atoms, so that silicon chip surface phosphorus atoms concentration remains in the safe range, reduce to greatest extent phosphorus atoms to the impact of silicon chip and subsequent device structure within long period of time.
For further showing the advantage of reduction silicon chip surface proposed by the invention, the present embodiment is analyzed by silicon chip surface phosphorus concentration contrast experiment, and the step of this experiment is as follows:
The first, with the air mass flow stuck-at-１ 4.8cm in the oxidation furnace board
3/ min;
The second, to get two numberings and be respectively 01 and 02 new silicon chip, there is the oxide layer of self-sow on the surface, carries out routine and cleans, with the various Impurity removals of silicon chip surface;
The 3rd, the silicon chip surface of numbering 01 passes into hydrogen, and the time of maintenance is 20 minutes, and the silicon chip of numbering 02 does not pass through any processing;
The 4th, the silicon chip of numbering 01 and 02 is all put into the oxidation furnace board, place the air that contains phosphorus atoms;
Surperficial phosphorus concentration to two silicon chips after the five, 24 hour is tested, and obtains the result such as table 1.
The contrast situation that table 1 silicon chip phosphorus concentration changes
| Number 01 silicon chip | Number 02 silicon chip | |
| Standing time (hour) | 24 | 24 |
| Result (atom/cm 2) | 4.68×10 10 | 1.79×10 12 |
Can find out from the experimental result of table 1, No. 01 silicon chip surface phosphorus concentration of processing through atmosphere of hydrogen is 4.68 * 10
10Atom/cm
2, in phosphorus concentration safe range 10
11Atom/cm
2Within.And be not directly exposed to phosphorous airborne No. 02 silicon chip, its surperficial phosphorus concentration 1.79 * 10 through hydrogen treat
12Atom/cm
2Then considerably beyond safe range 10
11Atom/cm
2, this result will cause harmful effect to device performance.
In the situation that can also consist of without departing from the spirit and scope of the present invention many very embodiment of big difference that have.Should be appreciated that except as defined by the appended claims, the invention is not restricted at the specific embodiment described in the specification.
Claims (5)
1. a method that reduces the semiconductor surface phosphorus concentration is characterized in that, comprising:
Semiconductor substrate is cleaned, dried, and after described Semiconductor substrate was cleaned, dried, there were dangling bonds in described semiconductor substrate surface, namely has unsaturated ionic bond;
It is F 〉=3000cm that described semiconductor substrate surface is exposed to hydrogen flowing quantity
3In the atmosphere of/min, retention time T, 20 minutes≤T≤60 minutes.
2. the method for reduction semiconductor surface phosphorus concentration according to claim 1 is characterized in that, described Semiconductor substrate is silicon substrate.
3. the method for reduction semiconductor surface phosphorus concentration according to claim 1 and 2 is characterized in that, described Semiconductor substrate is cleaned, oven dry is placed in the oxidation furnace board.
4. the method for reduction semiconductor surface phosphorus concentration according to claim 1 and 2 is characterized in that, described cleaning operation refers to clean conventional impurity in the semiconductor processes of described semiconductor substrate surface.
5. the method for reduction semiconductor surface phosphorus concentration according to claim 1 and 2 is characterized in that, described hydrogen flowing quantity F, 3000cm
3/ min≤F≤5000cm
3/ min.
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| CN 201010271183 CN102386057B (en) | 2010-09-01 | 2010-09-01 | Method for lowering phosphorus concentration on semiconductor substrate surface |
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| CN102386057B true CN102386057B (en) | 2013-10-23 |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1641854A (en) * | 2004-01-14 | 2005-07-20 | 株式会社瑞萨科技 | Method of manufacturing a semiconductor device |
| CN1757099A (en) * | 2003-03-04 | 2006-04-05 | 东京毅力科创株式会社 | Substrate processing system and method for manufacturing semiconductor device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080069952A1 (en) * | 2006-09-18 | 2008-03-20 | Atmel Corporation | Method for cleaning a surface of a semiconductor substrate |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1757099A (en) * | 2003-03-04 | 2006-04-05 | 东京毅力科创株式会社 | Substrate processing system and method for manufacturing semiconductor device |
| CN1641854A (en) * | 2004-01-14 | 2005-07-20 | 株式会社瑞萨科技 | Method of manufacturing a semiconductor device |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HONGLI SEMICONDUCTOR MANUFACTURE CO LTD, SHANGHAI Effective date: 20140504 |
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Effective date of registration: 20140504 Address after: 201203 Shanghai Zhangjiang hi tech park Zuchongzhi Road No. 1399 Patentee after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201203 Shanghai Zhangjiang hi tech park Zuchongzhi Road No. 1399 Patentee before: Hongli Semiconductor Manufacture Co., Ltd., Shanghai |