CN102385031B - Noncontact metal electro-migration measuring method and device - Google Patents
Noncontact metal electro-migration measuring method and device Download PDFInfo
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- CN102385031B CN102385031B CN 201110357374 CN201110357374A CN102385031B CN 102385031 B CN102385031 B CN 102385031B CN 201110357374 CN201110357374 CN 201110357374 CN 201110357374 A CN201110357374 A CN 201110357374A CN 102385031 B CN102385031 B CN 102385031B
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Abstract
The invention discloses a noncontact metallic interconnecting line electro-migration measuring method, which comprises the following steps of: irradiating a metallic interconnecting line for calibrating by using parallel light, and simultaneously detecting the resistance of the metallic interconnecting line for calibrating by adopting four probes; establishing a corresponding relationship between the resistance detected by the four probes in the metallic interconnecting line for calibrating and the surface reflected light intensity of the metallic interconnecting line for calibrating; irradiating a metallic interconnecting line to be measured by using the parallel light; detecting the intensity of the surface reflected light of the metallic interconnecting line to be measured in real time; and acquiring the corresponding resistance value of the metallic interconnecting line to be measured under certain reflected light intensity according to the established corresponding relationship between the resistance and the reflected light intensity. The invention also provides a measuring device, which mainly comprises the four probes, a parallel light source, an optical microscope and a computer. Compared with a common four-probe detection method, the method for simultaneously detecting the electro-migration of the metallic interconnecting lines in real time on a test sample in a large range under the condition that the test sample is not contacted has the advantages of larger detection range, quicker time and lower cost.
Description
Technical field
The present invention relates to proving installation and the method for proving installation and method, the especially metal interconnecting charge transfer of metal electro-migration reliability.
Background technology
Electromigration is the very important a kind of failure cause of interconnection line in the microelectronic component, and the electromigration meeting causes open circuit and the short circuit of interconnection line.After sub-micron, deep-submicron development, the width of metal interconnecting wires also constantly reduces at device size, and current density constantly increases, and is easier to occur electromigration invalidation.Traditional electro-migration testing method is the resistance variations by four probe method test target wire, detects the degree that electromigration occurs.This method can only detect the part of specialized designs sample, simultaneously the case of iontophoresis of metal interconnecting wires on a large scale on the detection chip.If want to understand in this way or test chip in the case of iontophoresis of all metal interconnecting wires will need very large workload, so need to find out a kind of new method come on the chip on a large scale the case of iontophoresis of metal interconnecting wires detect.
Summary of the invention
The object of the present invention is to provide a kind of non contact metal interconnection line electromigration measuring method, can on the chip on a large scale the case of iontophoresis of metal interconnecting wires detect.
Another object of the present invention is to provide the measurement mechanism of realizing above-mentioned measuring method.
A kind of non contact metal interconnection line electromigration measuring method is specially:
Use the directional light irradiation to demarcate and use metal interconnection wire, adopt simultaneously four point probe to detect the resistance of demarcating with metal interconnection wire;
Set up the demarcation resistance of metal interconnection wire and the corresponding relation that the surface reflection light intensity of metal interconnection wire is used in demarcation that four point probe detects;
Use directional light to shine metal interconnection wire to be measured;
Detect in real time metal interconnection wire surface reflection light intensity to be measured;
Obtain metal interconnection wire to be measured corresponding resistance value under the specific reflection light intensity according to the resistance of setting up and the corresponding relation of reflective light intensity.
Further, also metal interconnection wire to be measured is placed under the vacuum environment.
Further, also to metal interconnection wire heating to be measured.
Realize the measurement mechanism of above-mentioned measuring method, comprise
Four point probe is for detection of the resistance of localized metallic interconnection line;
Parallel light source is used for all metal interconnection wires on the irradiation wafer;
Optical microscope is for the light reflected image of all metal interconnection wires of Real-time Collection;
Computing machine is used for obtaining the light intensity of metal interconnection wire according to the light reflected image, and sets up the resistance of localized metallic interconnection line and the corresponding relation of intensity of reflected light.
Further, described measurement mechanism also comprises the vacuum chamber with quartzy cover plate for placing wafer.
Further, described measurement mechanism also comprises the heating arrangement for the heating wafer.
Further, described measurement mechanism also comprises the directional light direction that the change parallel light source sends so that it shines the semi-transparent semi-reflecting level crossing of wafer.
Technique effect of the present invention is embodied in:
The present invention can detect the in a big way many strip metals interconnection line electromigration on the sample in the situation that does not contact sample simultaneously in real time, compares with common four point probe detection method, and sensing range is larger, and the time is faster, cost is lower.
Description of drawings
Fig. 1 is the synoptic diagram of pick-up unit;
Fig. 2 is for detecting the light path synoptic diagram;
Fig. 3 is that four point probe detects synoptic diagram.
Embodiment
Principle of the present invention: the metal interconnection wire on the wafer can reflect under the directional light irradiation, can obtain the catoptrical intensity in metal surface by microscope in computer.Metal inside crystal structure and configuration of surface all can change so that metal pair reflection of light rate changes after metal generation electromigration.So the variation of metal surface reflectivity can be used for characterizing the process that electromigration occurs.
Method of testing is: adopt four point probe to detect the resistance of demarcating with metal interconnection wire, use simultaneously the directional light irradiation to demarcate and use metal interconnection wire; Set up the demarcation resistance of metal interconnection wire and the corresponding relation that the surface reflection light intensity of metal interconnection wire is used in demarcation that four point probe detects; Use directional light to shine metal interconnection wire to be measured; Detect in real time metal interconnection wire surface reflection light intensity to be measured; Obtain metal interconnection wire to be measured corresponding resistance value under certain reflective light intensity according to the resistance of setting up and the corresponding relation of reflective light intensity.
Under normal operating position, the electromigration median time to failure is very long, must take certain method to accelerate electromigratory carrying out in the test.Generally adopt the mode of heat temperature raising to accelerate electromigratory process according to electromigratory hot accelerating performance, however metal easily oxidation under the high temperature in air.In today that vacuum technique is gradually improved, can utilize vacuum environment to carry out the electromigration experiment, after being vacuumized, experimental provision inside can effectively avoid metal oxidation at high temperature.Simultaneously since the degree of accuracy of the setting of vacuum environment control temperature during for heating also have very great help.
Fig. 1 has provided a measurement mechanism embodiment who realizes described measuring method, and embodiment comprises four point probe, parallel light source, semi-transparent semi-reflecting level crossing, optical microscope, computing machine, heating arrangement and has the vacuum chamber of quartzy cover plate.
Wafer is placed in the vacuum chamber, use heating arrangement that wafer is heated.Utilize parallel light source to shine semi-transparent reflective plane mirror, on metal wire to be measured, light returns along former road and sees through semi-transparent semi-reflecting level crossing and enter microscope and be converted to picture signal input computing machine and observe light through semi-transparent antiplane mirror reflection vertical irradiation.Can when each the detection, set up in real time the localized metallic interconnection line of four point probe detection and the corresponding relation of resistance, the plain conductor resistance variations process that also can only when measuring first, record by four probe method, with the variation of itself and the image demarcation of comparing, in the measurement of subsequent sample, just can directly use the microscope detection sample reflectivity to measure.
The present invention utilizes contactless measurement, a situation arises can to observe simultaneously and measure the electromigration of very large regional metal interconnection line on the wafer, and traditional electromigration is measured and needed the special-purpose test structure of preparation and can only test the situation that very little partial structurtes electromigration occurs.The process that electromigration under household condition occurs is very long, so generally need the high temperature accelerator during research electromigration, the present invention utilizes vacuum environment to avoid plain conductor oxidation at high temperature, and establish quartzy cover plate at vacuum cavity, because quartz material is to the high-transmission rate of required wavelength light, so that metallic reflection light can enter microscope to greatest extent, thereby improved the degree of accuracy of experiment.
The present invention is described in further detail below in conjunction with accompanying drawing and practical measuring examples.
Electro-migration testing method of the present invention is given an example:
(1) as among Fig. 1, to open vacuum pump and vacuumize, open temp collector and heating and temperature control device are heated to assigned temperature with sample.
(2) load steady current to sample, make sample begin electrotransport process.
(3) resistance variations of a circuit in the usefulness four point probe test samples is such as Fig. 3; Use simultaneously the reflectance varies of many circuits in the microscopic sample.Effective optical path such as Fig. 2 after light sends from light source.With numerical value computer real time record.
(4) after electromigration is finished, the resistance variations data scaling reflectance varies data of utilizing four point probe to measure, thus obtain the case of iontophoresis of many interconnection lines on the sample.
Claims (5)
1. non contact metal interconnection line electromigration measuring method is specially:
To metal interconnecting wires heating to be measured;
Use the directional light irradiation to demarcate and use metal interconnecting wires, adopt simultaneously four point probe to detect the resistance of demarcating with metal interconnecting wires;
Set up the demarcation resistance of metal interconnecting wires and the corresponding relation that the surface reflection light intensity of metal interconnecting wires is used in demarcation that four point probe detects;
Use directional light to shine metal interconnecting wires to be measured;
Detect in real time metal interconnecting wires surface reflection light intensity to be measured;
Obtain metal interconnecting wires to be measured corresponding resistance value under the specific reflection light intensity according to the resistance of setting up and the corresponding relation of reflective light intensity.
2. non contact metal interconnection line electromigration measuring method according to claim 1 is characterized in that, also metal interconnecting wires to be measured is placed under the vacuum environment.
3. realize the measurement mechanism of claim 1 or 2 described measuring methods, comprise
Heating arrangement is used for the heating wafer;
Four point probe is for detection of the resistance of localized metallic interconnection line;
Parallel light source is used for all metal interconnecting wires on the irradiation wafer;
Optical microscope is for the light reflected image of all metal interconnecting wires of Real-time Collection;
Computing machine is used for obtaining the light intensity of metal interconnecting wires according to the light reflected image, and sets up the resistance of localized metallic interconnection line and the corresponding relation of intensity of reflected light.
4. measurement mechanism according to claim 3 is characterized in that, also comprises the vacuum chamber with quartzy cover plate for placing wafer.
5. measurement mechanism according to claim 3 is characterized in that, also comprises the directional light direction that the change parallel light source sends so that it shines the semi-transparent semi-reflecting level crossing of wafer.
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| CN 201110357374 CN102385031B (en) | 2011-11-11 | 2011-11-11 | Noncontact metal electro-migration measuring method and device |
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| CN106680694A (en) * | 2017-01-19 | 2017-05-17 | 重庆科技学院 | Experimental device of micro linear solder joints electromigration |
| CN107389987A (en) * | 2017-07-26 | 2017-11-24 | 华中科技大学 | A kind of simple electro-migration testing system |
| CN107607214B (en) * | 2017-09-13 | 2019-12-24 | 上海华力微电子有限公司 | Temperature measuring method and electromigration testing method |
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| US5250809A (en) * | 1992-01-24 | 1993-10-05 | Shuji Nakata | Method and device for checking joint of electronic component |
| JP2001004719A (en) * | 1999-06-24 | 2001-01-12 | Hamamatsu Photonics Kk | Current variation measuring instrument |
| US6515282B1 (en) * | 2000-03-28 | 2003-02-04 | Applied Materials, Inc. | Testing of interconnection circuitry using two modulated charged particle beams |
| JP4526765B2 (en) * | 2003-01-20 | 2010-08-18 | 浜松ホトニクス株式会社 | Beam irradiation heating resistance change measuring device |
| CN201681119U (en) * | 2010-03-26 | 2010-12-22 | 北京工业大学 | Data collecting system for electro-migration voltage at welding spot |
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Inventor after: Liu Sheng Inventor after: Lv Zhicheng Inventor after: Wang Xuefang Inventor after: Yuan Jiaojiao Inventor after: Wang Yuzhe Inventor before: Liu Sheng Inventor before: Wang Xuefang Inventor before: Lv Zhicheng Inventor before: Yuan Jiaojiao Inventor before: Wang Yuzhe |
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Free format text: CORRECT: INVENTOR; FROM: LIU SHENG WANG XUEFANG LV ZHICHENG YUAN JIAOJIAO WANG YUZHE TO: LIU SHENG LV ZHICHENG WANG XUEFANG YUAN JIAOJIAO WANG YUZHE |
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